CN118139817A - 雷达透明的光学反射性半导体效应颜料 - Google Patents
雷达透明的光学反射性半导体效应颜料 Download PDFInfo
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- CN118139817A CN118139817A CN202280070942.XA CN202280070942A CN118139817A CN 118139817 A CN118139817 A CN 118139817A CN 202280070942 A CN202280070942 A CN 202280070942A CN 118139817 A CN118139817 A CN 118139817A
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Classifications
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- C—CHEMISTRY; METALLURGY
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- C23C14/0005—Separation of the coating from the substrate
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Abstract
本发明涉及薄片状效应颜料,其包含由半导体材料组成的单个小片作为光学活性层,所述单个小片具有在0.1至2.5eV范围内的带隙和具有以下平均原子组成:a)Si(1‑x)Gex,其中0<x<1.00,或b)Si(1‑y)Sny,其中0<y<0.90,或c)Ge(1‑z)Snz,其中0<z≤0.60,或d)Si(1‑m‑n)GemSnn,其中0<m<1.00,0<n<1.00,前提是x<1.00,y<1.00,z<1.00,并且m+n<1.00。这些效应颜料显示吸引人的光学特性,并且是雷达透明的。
Description
本发明涉及效应颜料,其基于特定的半导体小片作为唯一的光学活性层,涉及其制备方法,以及用作具有吸引人的光学特性的雷达透明效应颜料的用途。
铝由于具有高的电导率而达到高的表面反射系数,导致高的表面等离子频率。在表面上的入射光的频率低于该表面的等离子频率的前提下,入射光将有效地从该表面反射。在铝中,表面等离子频率可以反射波长≥近紫外光的光,包括可见光、IR、微波和无线电。因此,铝和大多数金属显示在宽波长范围内的高反射系数。不幸的是,控制可见光反射的相同效应也对反射IR、微波和雷达的波长有效。所以,铝和其它金属的小片具有足够的雷达透明性,但同时在全世界广泛用作标准效应颜料以实现在可见光范围内的金属效应,尤其在汽车涂料中。
介电材料例如珠光颜料已经与细的铝薄片一起使用以提高复合材料的雷达透明性,参见WO 2020/208134 A1、US 2010/0022696 A1或WO 2021/030197 A1。
在这里,金属薄片、通常铝薄片仍然存在于涂料中,并且需要用最终涂料的预期光学特性来平衡雷达衰减。在许多情况下,雷达衰减仍然过高,和/或不能获得特定的色调。
US 2002/0041047 A1致力于通过PVD工艺制备薄金属片的有效方法。此文献主要涉及铝薄片,但是也在一个实施例中公开了厚度为35nm的Si薄片。
介电材料是非导电性的,所以不会受到铝的同样高的表面等离子频率反射系数的影响。介电材料经由菲涅尔(Fresnel)反射达到反射系数和不透明度,其中顶部单个表面的反射度公式定义为:
r顶=(nmat-nmed1)/(nmat+nmed1)
底表面的反射度公式(参见以上入射光)定义为:
r底=(nmed2-nmat)/(nmed2+nmat)
其中r顶是顶表面的反射幅度,r底是底表面的反射幅度,nmat是材料的折射率,nmed1是在材料之上的介质的折射率,nmed2是在材料之下的介质的的折射率(入射光在nmed1之上)。
反射强度(R)定义为R=r2。
在粘合剂体系中,可以通常假定1.35<nmed1=nmed2<1.6。作为介电材料,例如TiO2和SiO2,通常显示n介电≤2.7,来自两个表面的总反射系数的上限(假设构造的干扰)是<25%。因此,虽然介电颜料在均化到粒度<<l雷达时显示高的雷达透明性,但是它们的应用由于低的光学反射系数和低的不透明性(遮盖力)而受到限制。
半导体通常在整个光谱范围内显示高的nmat,并具有改进的在带隙之上的nmat。例如,硅显示在λ为约4000nm下的nsemi为约3.4,在λ为约370nm下的顶点nsemi为约6.7。此关系对于大多数元素和化合物半导体是适用的。使用与上述介电材料相同的条件(假定1.35<nmed1=nmed2<1.6),且在可见光范围内的nsemi为约5.0,总反射系数可以达到>50%(假定构造的干扰)。
半导体膜例如硅、锗或其合金的使用已从关于制造随机体系用于开发自驱动车辆的文献知晓。其实例如WO 2021/018422 A1或US 2010/0207842 A1中所述。
但是,也迫切需要开发效应颜料,其能向涂料工业提供具有宽的光学适用性和效果、并同时具有足够的雷达透明性的涂料配制剂和漆料。
特别是,需要新的效应颜料,其具有金属外观,但是具有比金属效应颜料与介电颜料的混合物更高的雷达透明性。它们应当易于获得,并具有不同的色调。特别期望获得银色外观的效应颜料,因为这些颜料确实具有最高的吸引力,尤其在汽车市场中。
所述颜料应当具有优良的遮盖力、金属光泽和高的金属随角异色(flop)。
这些目的通过提供薄片状效应颜料来实现,这种薄片状效应颜料包含由半导体材料组成的单个小片(single platelet)作为光学活性层,所述单个小片具有在0.1至2.5eV范围内的带隙,并具有以下平均原子组成:
a)Si(1-x)Gex,其中0<x<1.00,或
b)Si(1-y)Sny,其中0<y<0.90,或
c)Ge(1-z)Snz,其中0<z≤0.60,或
d)Si(1-m-n)GemSnn,其中0<m<1.00,0<n<1.00,
前提是x<1.00,y<1.00,z<1.00,并且m+n<1.00。
其它优选实施方案如权利要求2至11所示。
本发明的目的还通过提供制备效应颜料的方法来实现,此方法包括以下步骤:
a)提供被脱模剂涂布的柔性基材,
b)在超高真空条件下将具有在0.1至2.5eV范围内的带隙的半导体材料蒸发到柔性基材a)上,
c)在合适的溶剂中从柔性基材剥离半导体膜,并粉碎在分散体中的粒子,由此得到半导体薄片,
d)从溶剂分离半导体薄片,和
e)任选地进行进一步的步骤,例如进一步对半导体薄片进行尺寸分类或将半导体薄片分散在不同的溶剂中,和其它的表面处理步骤。
其它优选实施方案如权利要求13至14所示。
最后,本发明的目的通过提供包含粘合剂和所述薄片状效应颜料的涂料体系来实现。
在本发明中,单个小片半导体具有以下平均原子组成:
a)Si(1-x)Gex,其中0<x<1.00,或
b)Si(1-y)Sny,其中0<y<0.90,或
c)Ge(1-z)Snz,其中0<z≤0.60,或
d)Si(1-m-n)GemSnn,其中0<m<1.00,并且0<n<1.00,和前提是x<1.00,y<1.00,z<1.00,并且m+n<1.00。
x、y、n和m是摩尔比例。在其它优选的实施方案中,根据a)的单个小片半导体具有以下组成:0.01<x<0.9,更优选0.02≤x≤0.8,最优选0.05≤x≤0.65。这些材料是硅和锗的合金。锗增加了令人感兴趣的颜色效果,因为该材料在可见光的波长区域中吸收。这与纯硅薄片相比还改进了不透明性。由于该材料的高成本,锗的含量优选尽可能低。
在其它优选实施方案中,根据b)的单个小片半导体具有以下组成:0.02≤y≤0.75,更优选of 0.05≤y≤0.55。这些材料是硅和锡的合金。
在其它优选实施方案中,根据c)的单个小片半导体具有以下组成:0.02≤z≤0.5,更优选0.05≤z≤0.4。这些材料是锗和锡的合金。
在其它优选实施方案中,根据d)的单个小片半导体具有以下特征的组成:0.02≤m≤0.8,并且0.02≤n≤0.75;更优选具有以下特征的组成:0.05≤m≤0.65,0.05≤n≤0.55。
小片半导体粒子可以还含有由于材料的制备而出现的常规杂质,例如碳、氮或氧。这些物质不包括在上式中。
在上式中不包含的其它金属或其它半导体材料的杂质通常占小片半导体材料的小于0.1重量%,优选小于0.05重量%,更优选小于0.005重量%,并且也不包括在上式中。
由于表面氧化,小片半导体粒子可以还含有一定量的氧。例如,小片合金半导体薄片可以在其表面上氧化。为了清楚起见,这种氧也不包括在上式中。优选,小片半导体粒子在其内部不含任何可注意的量的氧。
在一个优选实施方案中,薄片状效应颜料的带隙在0.2至1.4eV的范围内,更优选在0.4至1.2eV的范围内。这些带隙对于半导体材料而言是典型的。
在半导体小片的固体构造中,在其内部结构中具有低的孔隙率或不具有孔隙。按照水银孔隙率测量法检测,孔隙率基本上是零,或由于没有孔隙而完全不能检测孔隙率。效应颜料优选通过PVD方法制备。它们的主表面(顶表面和底表面)是相当平坦和光滑的,这对于PVD效应颜料而言是典型的。这种光滑结构以及不存在可关注的内部孔隙率的情况使得所述小片能以最佳的反射度发挥作用。
由于这些材料在可见光的波长区域中的高折射率,所述小片半导体粒子显示非常强的反射。根据半导体小片的厚度,可以产生不同的颜色。
因此,单个半导体小片的平均厚度ta优选在5至160nm的范围内,更优选在10至小于140nm的范围内,最优选在15至130nm的范围内。术语“平均厚度”表示颜料样品的厚度的算术平均值。
在平均厚度ta大于160nm时,小片半导体可能不能在最终涂料体系中很好地取向,并且遮盖力显著降低。当平均厚度ta小于5nm时,小片可能变成机械不稳定的,并可能难以按照足够的量复制。
ta值通过采用SEM计数小片的厚度分布来测定,如WO 2004087816A2中所述,不同之处是使用算术平均值代替中值。
在优选实施方案中,薄片状效应颜料具有银色外观,并且单个半导体小片的平均厚度ta在12至40nm的范围内,优选在18至35nm的范围内。对于这种薄片状效应颜料,尤其优选如上所述的Si-Ge或Si-Sn合金。
在本发明中,表述“银色外观”或“中性色调”表示使用这些效应颜料时,在所有检测角范围内(-15°、15°、25°、45°、75°和110°)实现中性颜色的色度,这在CIELab色空间中的a*-和b*-值的绝对值独立地为小于6.5、更优选小于4.0、最优选小于2.0单位的情况下实现。优选,在这里使用如实验部分中所述的刮涂工艺实现。
在其它优选的实施方案中,薄片状效应颜料具有着色的外观,并且单个半导体小片的中值厚度h50在从大于40nm至160nm的范围内。在这里,a*-和b*-值范围的绝对值在CIELab色空间中独立地等于或大于6.5单位。
关于薄片状效应颜料的粒度和粒度分布,选择在汽车工业或工业涂料中的涂料的典型粒度范围。优选,薄片状效应颜料具有粒度分布的d50在2至100μm的范围内,更优选在5至40μm的范围内,进一步更优选在6至35μm的范围内,最优选在7至30μm的范围内。
颜料的尺寸通常使用来自体积平均粒度分布的分位数(quantiles)(d值)来指示。在这里,该数值表示在体积平均粒度分布中所含的比规定尺寸更小的粒子的百分比。例如,d50值表示其中50%的粒子的尺寸小于该值。这些检测例如通过激光粒度测量法使用由Horiba制造的粒度分析仪进行,其是Horiba LA 950仪器。该检测使用Fraunhofer近似对于等价球进行,并使用来自制造商的信息的合适参数。
d10-值表征细粒子的量,通常在2至20μm的范围内,优选4至15μm。
d90-值表征粗粒子的量,通常在15μm至140μm的范围内,优选20μm至50μm。
粒度分布的宽度可以由(d90-d10)/d50定义的跨度来表征,优选此跨度在1.50至2.2的范围内,更优选在1.6至2.0的范围内。
不受限于特定的理论,本发明人认为由于效应颜料的粒度显著小于雷达微波,所以雷达波的衰减甚至低于相应半导体材料的宏观膜的衰减。
本发明的薄片状效应颜料优选具有定义为d50/h50的纵横比在30至2000的范围内,更优选在40至1500的范围内,最优选在50至1000的范围内。
在本发明中,仅仅薄片状效应颜料的光学活性层由上述半导体小片构成。与金属薄片相比,尤其与广泛使用的铝薄片相比,这些效应颜料的另一个优点是其优异的气化稳定性。通常,这些小片不需要用其它抗腐蚀层涂布。
但是,在某些情况下,可能需要这种涂层。更通常地,特定的具有非光学活性材料的涂层可能是有用的。
所以,在其它实施方案中,单个半导体小片进一步被具有折射率n<1.8、优选折射率n<1.6的透明的非光学活性金属氧化物包封。
术语“非光学活性层”表示在本发明中,该层对在可见光波长区域中的入射光的反射小于20%或优选小于10%。另外,该层不会改变色度响应。
特别是,当在硝基纤维素清漆中使用时,外部非光学活性层与相同的但不含外部非活性层的层堆叠效应颜料相比,将显示这种经涂布的效应颜料发生变化,参见实验部分的描述:DC*15°≤2.0,和/或DH*15°≤10°,优选≤5°,和/或DL*15°≤10。
通常,这种非活性层具有在可见光的波长区域中的平均折射率小于1.7,更优选小于1.6。通常,这种非活性层在可见光的波长区域中具有小于34nm的光学密度,更优选小于32nm。在这里,折射率参见相应材料的文献实体值,而不是该层的有效折射率。
在优选实施方案中,非光学活性层基本上包封整个半导体小片,并由Mo-氧化物、SiO2、Al2O3、B2O3或其混合物组成。如果不用于进一步改进气化稳定性,则典型的非光学活性层是表面改性剂,例如基于有机官能硅烷、钛酸酯、铝酸酯或锆酸酯、磷酸酯、膦酸酯、亚磷酸酯、醇或胺的添加剂及其组合。这些表面改性剂用作面涂层以调节效应颜料与最终应用的粘合剂介质的化学相容性,例如参见EP 1084198 A1。它们可以直接涂布到单个半导体小片颜料或非光学活性层上。
作为表面改性剂,最优选有机官能硅烷。在另一个优选实施方案中,半导体小片首先被SiO2的薄层涂布,然后用合适的表面改性剂涂布,最优选有机官能硅烷。在这里,SiO2层主要用于改进有机官能硅烷对半导体小片的表面的粘合性。
合适的有机官能硅烷是可商购的,例如由赢创公司(Evonik,Rheinfelden,德国)生产和以商品名销售。其它产品可以从OSi Specialties(/>硅烷)或从Wacker(/>硅烷)购买。
有机官能硅烷的合适例子是3-甲基丙烯酰氧基丙基三甲氧基硅烷(DynasylanMEMO),乙烯基三(甲)乙氧基硅烷(Dynasylan VTMO或VTEO),3-巯基丙基三(甲)乙氧基硅烷(Dynasylan MTMO或3201),3-缩水甘油酰氧基丙基三甲氧基硅烷(Dynasylan GLYMO),三(3-三甲氧基甲硅烷基丙基)异氰脲酸酯(Silquest Y-11597),γ-巯基丙基三甲氧基硅烷(Silquest A-189),二(3-三乙氧基甲硅烷基丙基)多硫化物(Silquest A-1289),二(3-三乙氧基甲硅烷基)二硫化物(Silquest A-1589),β-(3,4-环氧环己基)乙基三甲氧基硅烷(Silquest A-186),γ-异氰酸酯基丙基-三甲氧基硅烷(Silquest A-Link 35,GenosilGF40),(甲基丙烯酰氧基甲基)三甲氧基硅烷(Genosil XL 33)和(异氰酸酯基甲基)三甲氧基硅烷(Genosil XL 43)。
在一个优选实施方案中,用于改性SiO2层的有机官能硅烷混合物包含至少一种氨基官能硅烷。氨基官能是一种能与粘合剂中存在的大部分基团发生化学相互作用的官能团。这种相互作用可以涉及共价键,例如与粘合剂的异氰酸酯或羧酸根官能团相互作用,或涉及氢键,例如与OH或COOR官能团相互作用,或离子相互作用。所以,它非常适用于使效应颜料与不同种类的粘合剂进行化学连接。
以下化合物优选用于此目的:
氨基丙基三甲氧基硅烷(Dynasylan AMMO),氨基丙基三乙氧基硅烷(DynasylanAMEO),N-(2-氨基乙基)-3-氨基丙基三甲氧基硅烷(Dynasylan DAMO),N-(2-氨基乙基)-3-氨基丙基三乙氧基硅烷,三氨基-官能三甲氧基硅烷(Silquest A-1130),二(γ-三甲氧基甲硅烷基丙基)胺(Silquest A-1170),N-乙基-γ-氨基异丁基三甲氧基硅烷(Silquest A-Link15),N-苯基-γ-二氨基丙基三甲氧基硅烷(Silquest Y-9669),4-氨基-3,3-二甲基丁基三甲氧基-硅烷(Silquest Y-11637),(N-环己基氨基甲基)-三乙氧基硅烷(Genosil XL926),(N-苯基氨基甲基)-三甲氧基硅烷(Genosil XL 973),和它们的混合物。
在另一个实施方案中,可以使用如EP 3080209 B1所述的预水解和预缩合的有机官能硅烷。
制备薄片状效应颜料的方法:
制备薄片状效应颜料的方法包括以下步骤:
a)提供被脱模剂涂布的柔性基材,
b)在超高真空条件下将半导体材料蒸发到柔性基材a)上,所述半导体材料具有在0.1至2.5eV范围内的带隙和具有以下平均原子组成:
a)Si(1-x)Gex,其中0<x<1.00,或
b)Si(1-y)Sny,其中0<y<0.90,或
c)Ge(1-z)Snz,其中0<z≤0.60,或
d)Si(1-m-n)GemSnn,其中0<m<1.00,0<n<1.00,
前提是x<1.00,y<1.00,z<1.00,并且m+n<1.00,
c)在合适的溶剂中从柔性基材剥离半导体膜,并粉碎在分散体中的粒子,由此得到半导体薄片,
d)从溶剂分离半导体薄片,和
e)任选地进行进一步的步骤,例如进一步对半导体薄片进行尺寸分类或将半导体薄片分散在不同的溶剂中,和其它的表面处理步骤。
步骤a):此步骤按照基本上与制备PVD金属颜料的已知方法相同的方式进行,尤其是铝效应颜料。柔性基材通常是从聚合物制成的网,所述聚合物最优选是PET聚合物。作为脱模剂,可以使用现有技术公知的那些。通常,脱模剂是聚合物,例如丙烯酸类、甲基丙烯酸类或聚苯乙烯类。它们也可以是其它有机材料,例如参见US 2004/0131776 A1或US20100062244 A1。
在一个优选实施方案中,步骤b)通过卷对卷(roll-to-roll)工艺进行。在步骤b)中,在一个实施方案中,具有预定组成的半导体合金用作本体材料,其通过合适方式进行蒸发以产生相应的气体分子,这些气体分子在超高真空条件下被转移到被脱模层涂布的柔性基材上。在另一个实施方案中,使用具有预定纯度的两种或三种合适的本体半导体材料,其中它们的蒸气云允许在到达基材之前重叠。
步骤b)可以按照电子束工艺、磁子溅射、有阻力的蒸发或感应加热来进行。最优选是通过电子束工艺进行半导体本体材料的蒸发。
步骤c)、d)和e)同样是本领域熟知的。
本发明的另一个实施方案涉及涂料体系,其包含粘合剂和本发明的薄片状效应颜料。粘合剂体系可以是丙烯酸类、聚酯、聚氨酯、聚环氧化物以及它们的共聚物。涂料体系优选是汽车基面涂料。
这种涂料体系可以另外还包含其它颜料,例如着色颜料、珠光颜料或金属效应颜料。
另外,涂料体系包含溶剂或溶剂混合物。优选它们是水基涂料体系。此外,它们可以含有本领域常规的填料或添加剂。
在所述涂料中,效应颜料的体积浓度优选是0.1-100%,更优选1-20%,最优选1.5-15%。
其它方面:
直接归因于颜料或涂料(颜料和粘合剂)的在特定频率下的电磁衰减(attn)可以通过用测得的整个涂布体系(包括基材、粘合剂和颜料)的电磁衰减减去源于基材或基材和粘合剂的电磁衰减来计算。为了简化,在本文中attn用单位分贝(dB)报告。我们将亮度与衰减之比定义为L*15/attn,其中attn是在特定的电磁频率或频率范围下的衰减,单位为dB,例如IR、微波和无线电频率。本发明的效应颜料的其它方面如下所述。
方面1:一种包含薄片状颜料的涂料体系,所述薄片状颜料包含由半导体材料组成的单个小片作为光学活性层,所述单个小片具有在0.1至2.5eV范围内的带隙,并具有以下平均原子组成:
a)Si(1-x)Gex,其中0<x<1.00,或
b)Si(1-y)Sny,其中0<y<0.90,或
c)Ge(1-z)Snz,其中0<z≤0.60,或
d)Si(1-m-n)GemSnn,其中0<m<1.00,0<n<1.00,
前提是x<1.00,y<1.00,z<1.00,并且m+n<1.00。
其中薄片状颜料或涂料包括这样的薄片状颜料,其在0.3THz-300THz(IR)的频率范围内具有小于5dB、优选小于4dB、最优选小于3dB的衰减。
方面2:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在0.3THz-300THz(IR)的频率范围内显示>85的亮度,并且亮度与衰减之比大于15,优选大于25,最优选大于50。
方面3:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在3-300GHz(微波)的频率范围内具有小于3dB、优选小于2dB、最优选小于1dB的衰减。
方面4:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在3-300GHz(微波)的频率范围内显示>85的亮度,并且亮度与衰减之比大于25,优选大于50,最优选大于100。
方面5:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在23-79GHz(雷达,微波的分支)的频率范围内具有小于3dB、优选小于2dB、最优选小于1dB的衰减。
方面6:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在23-79GHz(雷达,微波的分支)的频率范围内显示>85的亮度,并且亮度与衰减之比大于25,优选大于50,最优选大于100。
方面7:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在0.3MHz至3GHz(RF)的频率范围内具有小于3dB、优选小于2dB、最优选小于1dB的衰减。
方面8:一种包含薄片状颜料的涂料体系,其中薄片状颜料或包含该薄片状颜料的涂料在0.3MHz至3GHz(RF)的频率范围内显示>85的亮度,并且亮度与衰减之比大于25,优选大于50,最优选大于100。
方面9:一种包含薄片状颜料的涂料体系,其中单个小片半导体具有以下平均原子组成:
a)Si(1-x)Gex,其中0.01<x<0.9,优选0.02≤x≤0.8,或
b)Si(1-y)Sny,其中0.02≤y≤0.75,或
c)Ge(1-z)Snz,其中0.02≤z≤0.5,或
d)Si(1-m-n)GemSnn,其中0.02≤m≤0.8,0.02≤n≤0.75。
方面10:一种包含薄片状颜料的涂料体系,其中单个小片半导体具有以下平均原子组成:
a)Si(1-x)Gex,其中0.05≤x≤0.65,或
b)Si(1-y)Sny,其中0.05≤y≤0.55,或
c)Ge(1-z)Snz,其中0.05≤z≤0.4,或
d)Si(1-m-n)GemSnn,其中0.05≤m≤0.65,0.05≤n≤0.55。
实施例
对比例1:市售的Metalure Liquid Black(Eckart GmbH),其是具有强的随角异色特性的黑色PVD金属效应颜料。
对比例2:市售的Metalure L-55700(Eckart GmbH),其是标准PVD铝效应颜料。
实施例1:硅-锗复合材料
使用电子束PVD蒸发操作将硅和锗的共混物沉积到宽度为30cm的被脱模剂涂布的透明聚酯膜上。电子束源在加工期间位于网下方的36cm处,并改进条件以实现最终颜料的银色着色。电子束源的加速电压在整个实验中保持为恒定的10kV。
将从实施例1得到的材料都从聚酯膜剥离下来,并均化到约19μm的粒度(D50值)。以在丙二醇甲基醚乙酸酯中10重量%的非挥发物含量(NVM)制成颜料。通过SEM分析测得,平均粒子厚度ta是23+/-3nm。通过能量分散光谱测得,元素硅:锗的原子比率是45:55。
用丙二醇甲基醚乙酸酯将颜料样品调节到5% NVM,以用于在Deltron DBC500Color Blender中的喷涂操作。将喷涂油墨配制成大约1.8至2.4%的目标颜料体积浓度。样品按照双份涂布,实现在聚酯膜和ABS塑料基材上1-2次涂布内的完全覆盖。将这些板在涂布之间在环境温度下干燥大约30分钟。
使用BYK Micro Tri-gloss检测仪收集光泽度数据。使用BYK Mac检测仪收集另外的光学数据。在聚酯膜的前面(涂层面)和背面上都收集光学数据。根据以下公式计算动态色指数:
动态色指数(flop index)=2.69x(L*15°-L*110°)1.11/L*45° 0.86
这些检测的结果汇总在下表1a至1d中。
表1a至1d:从实施例1的硅锗合金效应颜料在不同的粘合剂:颜料比率和不同基材的情况下收集的光学数据。
表1a:
表1b:
表1c:
表1d:
实施例2:硅-锗颜料与粘合剂之比的改进
使用电子束PVD蒸发操作将硅和锗的共混物沉积到宽度为30cm的被脱模剂涂布的透明聚酯膜上。电子束源在加工期间位于网下方的36cm处,并改进条件以实现最终颜料的银色着色。电子束源的加速电压在整个实验中保持为恒定的10kV。
将从实施例2得到的材料都从聚酯膜剥离下来,并均化到约14μm的粒度(D50值)。以在丙二醇甲基醚乙酸酯中10重量%的非挥发物含量(NVM)制成颜料。通过SEM分析测得,平均粒子厚度ta是29+/-3nm。通过能量分散光谱测得,元素硅:锗的原子比率是47:53。
设计喷涂梯度并执行。使用Deltron DBC500 Color Blender,将多种喷涂油墨配制成计算的在3-61%之间的颜料体积浓度。在所有油墨配制剂中,金属含量保持恒定。将样品作为两组涂布到ABS板基材上。在单次涂布中涂布全部的每种油墨,由此保持在所有板中的金属分布一致。从每个组选择的板用Deltron DC4000进行透明涂层涂布,并在60℃下强制干燥另外60分钟。将这些板在每次涂布之间在环境温度下干燥约30分钟。
使用BYK Micro Tri-gloss检测仪收集光泽度数据。使用BYK Mac检测仪收集另外的光学数据。这些检测的结果汇总在下表2中。
表2a、2b和2c:实施例2在不同的粘合剂:颜料比率下的光泽度、动态色指数、L*-、a*-和b*值
表2b:
表2c:
此实施例的效应颜料显示相当中性的色调,且具有高的动态色指数值,使得该颜料成为具有吸引人的金属外观的效应颜料。
当提高粘合剂/颜料比率时,动态色指数和光泽度值倾向于随着粘合剂浓度的降低而降低,随着该体系的干燥,薄片之间的空隙较小。这确保了颜料在相对于基材的平面/平行位置处更好地取向,由此产生高的反射系数。
实施例系列3:SiSn
根据实施例2所述制备硅合金薄片的其它样品,但是用锡替代锗作为合金材料。在不同条件下进行三个实验以改变所得合金薄片的组成和厚度。Si:Sn的组成和薄片厚度变化,并用SEM分析证实,如表4所示。在此分析中,不包括氧含量。
表3.厚度和组成(不包括氧)
样品 | Si:Sn原子比率 | 平均厚度(nm) |
实施例3a | 79:21 | 29 |
实施例3b | 69:31 | 26 |
实施例3c | 70:30 | 35 |
使用Deltron DBC500 Color Blender按照表4所示的粘合剂:颜料比率配制多种喷涂油墨。在所有油墨配制剂中,金属含量保持恒定。将样品作为双份涂布到ABS板基材上。在单次涂布中涂布全部的每种油墨,由此保持在所有板中的金属分布一致。从每个组选择的板用Deltron DC4000进行透明涂层涂布,并在60℃下强制干燥另外60分钟。将这些板在每次涂布之间在环境温度下干燥约30分钟。
使用BYK Micro Tri-gloss检测仪收集光泽度数据。使用BYK Mac检测仪收集另外的光学数据。这些检测的结果汇总在下表4中。对比例1(市售的Metalure Liquid Black)和对比例2(市售的Metalure L-55700)的数据用于进行比较。
表4a至4c:从实施例3的硅锡合金效应颜料得到的光学数据
表4a:
表4b:
表4c:
从表4a显然可见,本发明实施例具有在对比例1(Metalure Liquid Black)和对比例2(标准PVD铝颜料)之间的动态色指数值。a*-、b*-值是小的,并显示基本中性的色调。在视觉上,效应颜料显示银色色调,并具有强的亮度随角异色。
实施例4a、4b:SiGe和SiSn的扩展测试
按照实施例1-3所示的参数制备硅锗合金薄片和硅锡合金薄片的样品,但是其组成略有不同。将从实施例4得到的材料都从其聚酯膜剥离下来,并均化到12-15μm的粒度(D50值)。以在丙二醇甲基醚中10重量%的非挥发物含量(NVM)制成颜料分散体。通过SEM/EDX分析显示,合金组成分别为Si46Ge54和Si66Sn34。发现SiGe和SiSn合金的平均粒子厚度ta分别是28+/-3nm和29+/-3nm。在此分析中不包括氧含量。
如下制备粘合剂配制剂:将43.5份的NC E 1160(来自Hagederon AG,德国)粘合剂,在异丙基30(isopropyl 30)中,其具有在乙酸丁酯85中的9重量%粘合剂含量,与26.5份乙酸丁酯、26.5份二甲苯、0.6份丁基二甘醇、1.6份丁二醇一起混合并搅拌,向其中加入0.3份Byk 358N和1.0份Byk 120作为添加剂。
按照表5所示的粘合剂:颜料比率配制多种喷涂油墨。使用乙酸丁酯和二甲苯的1:1溶剂混合物调节粘度。使用来自德国Company Oerter的喷涂设备APL 3.3将喷涂油墨涂布到ABS板上。每个配制剂涂布四次以达到每种效应颜料的全色调覆盖。
雷达透明性的检测使用频率为76.5GHz的微波辐射进行,使用来自德国PerisensGmbH的RMS-D-77/79G设备作为检测系统。使用BYK Mac比色计收集另外的光学数据。
喷涂板的雷达衰减和光学检测结果如表5所示。雷达数据已经进行背景校正以解释由未涂布的基材引起的损失。
表5a、5b、5c:实施例3与对比例相比的雷达和光学表征。
表5a:
表5b:
表5c:
显然可见,硅锗合金和硅锡合金效应颜料产生基本为零的雷达衰减,而金属效应颜料都显示显著的损失。所有应用以效应颜料的全覆盖力实现。
当比较全色调遮盖力时,实施例4的效应颜料合金显示的光学动态色指数与对比例1和2的效应颜料相当。通常视为亮度指标的L*15值处于对比例1和对比例2之间。
实施例5:SiGe、SiSn和对比例3:Si
根据实施例1-3所述制备硅-锗合金薄片和硅-锡合金薄片的其它样品。额外的仅含Si的对比样品在改变硅厚度的情况下制备。使用SEM分析确认Si:Ge、Si:Sn和Si的组成和平均粒子厚度(ta),如表6所示。在此分析中不包括氧含量。
将沉积的材料都从聚酯膜剥离,并均化到12-15μm的粒度(d50值)。在Eckart室内粘合剂体系中制备油墨,其由在乙酸乙酯和丙二醇甲氧基醚的溶剂混合物中的Hagedorn H7硝基纤维素粘合剂组成(可从德国Hagedorn AG,Osnabrück得到)。配制剂是基于粘合剂与金属含量之间的重量比率为1.85:1,总金属含量为1.5%。用绕线棒将样品刮涂到平坦的聚酯膜上,达到40μm的湿膜厚度。
分别用BYK Micro Tri-gloss计量仪和BYK Mac比色计收集每种聚酯膜反面的光泽和颜色数据。使用X-rite 341C透射密度计收集不透明度数据,其中沿着经涂布的聚酯膜有平均6个收集点。这些检测的结果汇总在表6中。为了比较,显示对比例1(市售的MetalureLiquid Black)和对比例2(市售的Metalure L-55700)的数据。
表6a、6b:实施例5和对比例的效应颜料的光学、厚度和组成数据。
表6b:
样品 | C*-15 | C*15 | C*25 | C*45 | C*75 | C*110 |
实施例5a(SiGe) | 3.10 | 4.63 | 3.53 | 1.76 | 1.24 | 1.34 |
实施例5b(SiSn) | 2.40 | 1.24 | 1.36 | 2.42 | 0.49 | 1.00 |
对比例3a(Si) | 28.56 | 27.05 | 18.5 | 9.5 | 6.31 | 4.78 |
对比例3b(Si) | 23.23 | 23.91 | 17.8 | 9.46 | 6.31 | 4.93 |
对比例3c(Si) | 24.23 | 23.12 | 14.81 | 6.99 | 4.31 | 2.98 |
对比例1 | 2.29 | 1.48 | 0.63 | 0.14 | 0.59 | 0.88 |
对比例2 | 2.17 | 1.07 | 0.69 | 0.61 | 0.42 | 1.29 |
从表6显然可见,在厚度相当的情况下,本发明实施例显示与仅含硅的样品(对比例3)相比显著更中性的色调。此外,本发明实施例5b的SiSn样品显示与对比例2的铝样品接近的中性色调。本发明实施例的光泽度值也优于仅含硅的样品和对比例1。本发明实施例的不透明度值也优于仅含硅的样品和对比例1。因此,本发明的硅-锗合金和硅-锡合金的颜色中性度、光泽度和覆盖力表现出优于仅含硅的样品。
Claims (15)
1.一种薄片状效应颜料,其包含由半导体材料组成的单个小片作为光学活性层,所述单个小片具有在0.1至2.5eV范围内的带隙和具有以下平均原子组成:
a)Si(1-x)Gex,其中0<x<1.00,或
b)Si(1-y)Sny,其中0<y<0.90,或
c)Ge(1-z)Snz,其中0<z≤0.60,或
d)Si(1-m-n)GemSnn,其中0<m<1.00,0<n<1.00,
前提是x<1.00,y<1.00,z<1.00,并且m+n<1.00。
2.根据权利要求1所述的薄片状效应颜料,其中带隙在0.2至1.4eV的范围内。
3.根据权利要求1或2所述的薄片状效应颜料,其中单个小片半导体具有以下平均原子组成:
a)Si(1-x)Gex,其中0.01<x<0.9,优选0.02≤x≤0.8,或
b)Si(1-y)Sny,其中0.02≤y≤0.75,或
c)Ge(1-z)Snz,其中0.02≤z≤0.5,或
d)Si(1-m-n)GemSnn,其中0.02≤m≤0.8,0.02≤n≤0.75。
4.根据权利要求1-3中任一项所述的薄片状效应颜料,其中单个小片半导体具有以下平均原子组成:
a)Si(1-x)Gex,其中0.05≤x≤0.65,或
b)Si(1-y)Sny,其中0.05≤y≤0.55,或
c)Ge(1-z)Snz,其中0.05≤z≤0.4,或
d)Si(1-m-n)GemSnn,其中0.05≤m≤0.65,0.05≤n≤0.55。
5.根据前述权利要求中任一项所述的薄片状效应颜料,其中单个半导体小片的平均厚度ta在5至160nm的范围内。
6.根据前述权利要求中任一项所述的薄片状效应颜料,其中所述效应颜料具有银色外观,并且单个半导体小片的平均厚度ta在15至40nm的范围内。
7.根据前述权利要求中任一项所述的薄片状效应颜料,其中所述效应颜料具有着色的外观,并且单个半导体小片的平均厚度ta在从大于40nm至160nm的范围内。
8.根据前述权利要求中任一项所述的薄片状效应颜料,其中粒度分布的d50在2至100μm的范围内。
9.根据前述权利要求中任一项所述的薄片状效应颜料,其中纵横比d50/ta在30至2000的范围内。
10.根据前述权利要求中任一项所述的薄片状效应颜料,其中所述单个半导体小片被折射率n<1.8的透明的非光活性金属氧化物涂布或包封,优选SiO2。
11.根据前述权利要求中任一项所述的薄片状效应颜料,其中所述效应颜料进一步被表面改性剂涂布,表面改性剂例如是有机官能硅烷、钛酸酯、铝酸酯或锆酸酯、磷酸酯、膦酸酯、亚磷酸酯及其组合。
12.一种制备根据权利要求1至11所述的薄片状效应颜料的方法,包括以下步骤:
a)提供被脱模剂涂布的柔性基材,
b)在超高真空条件下将具有在0.1至2.5eV范围内的带隙的半导体材料蒸发到柔性基材a)上,
c)在合适的溶剂中从柔性基材剥离半导体膜,并粉碎在分散体中的粒子,由此得到半导体薄片,
d)从溶剂分离半导体薄片,和
e)任选地进行进一步的步骤,例如进一步对半导体薄片进行尺寸分类或将半导体薄片分散在不同的溶剂中,和其它的表面处理步骤。
13.根据权利要求12)所述的制备薄片状效应颜料的方法,其中步骤b)通过卷对卷工艺进行。
14.根据权利要求12)或13)中任一项所述的制备薄片状效应颜料的方法,其中步骤b)通过电子束工艺进行。
15.一种涂料体系,其包含粘合剂和根据权利要求1至11所述的薄片状效应颜料。
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