CN118054778A - Solid-state switch with memory function and control method - Google Patents
Solid-state switch with memory function and control method Download PDFInfo
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- CN118054778A CN118054778A CN202410032605.2A CN202410032605A CN118054778A CN 118054778 A CN118054778 A CN 118054778A CN 202410032605 A CN202410032605 A CN 202410032605A CN 118054778 A CN118054778 A CN 118054778A
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- 230000006386 memory function Effects 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000007787 solid Substances 0.000 claims description 4
- 230000003750 conditioning effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
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Abstract
The invention provides a solid-state switch with a memory function and a control method, which comprises a constant current source, a TMR element and a power circuit, wherein the output end of the constant current source is connected with the TMR element, the input end of the power circuit is connected with the TMR element, the constant current source outputs high-precision constant current to the TMR element, an MOSFET is adopted as a main switch element in the power circuit, the power circuit is not limited by the switching times, the TMR element is adopted as a control part, and the memory function of the TMR element is converted into the memory function of the MOSFET switch.
Description
Technical Field
The invention relates to the technical field of switching circuits, in particular to a solid-state switch with a memory function and a control method.
Background
The traditional switch with the memory function is a magnetic latching relay, and the magnetic latching electromagnetic relay is used as a basic element in a circuit control system, and has long been an indispensable key element in a missile, a carrier rocket, an artificial satellite, a spacecraft, a space plane and matched ground measurement and control equipment thereof, wherein the magnetic latching electromagnetic relay comprises a power supply subsystem, a power supply and distribution subsystem and various control subsystems.
When the reset coil passes through pulse current, the magnetic latching electromagnetic relay is in a reset on state; when the 'setting' coil passes through pulse current, the contact switch is in a setting on state; after the "reset" or "set" current is removed, the switch of the contact remains unchanged from the previous state.
However, the inherent defects of the magnetic latching relay are obvious, firstly, the switching times are limited, and the switching times of the relay are 10 ten thousand times generally, so that the magnetic latching relay is not suitable for being used in the occasion with frequent switching; secondly, the mechanical properties are poor, and phenomena such as contact shake, false action and the like can occur in a severe mechanical environment; thirdly, the weight and the volume are large, and the use is limited.
Disclosure of Invention
The invention provides a solid-state switch with memory function and a control method, which adopts a MOSFET as a main switch element, is not limited by the switching times, adopts a TMR element as a control component, and converts the memory function of the TMR element into the memory function of the MOSFET switch.
In a first aspect, the present invention provides a solid state switch with memory function, comprising: a constant current source, a TMR element and a power circuit, wherein the output end of the constant current source is connected with the TMR element, and the input end of the power circuit is connected with the TMR element;
the constant current source comprises a triode Q1, a resistor R2, a first operational amplifier D1, a voltage feedback control circuit and a reference voltage setting circuit, wherein the collector of the triode Q1 is connected with a 12V power supply, the emitter of the triode Q1 is connected with one end of the resistor R2, the other end of the resistor R2 is connected with one end of a TMR element resistor R1, the other end of the TMR element resistor R1 is grounded, two ends of the resistor R2 are respectively connected with two input ends of the operational amplifier, the output end of the operational amplifier is connected with the feedback input end of the voltage feedback control circuit, the base of the triode Q1 is connected with the output end of the voltage feedback control circuit, and the reference voltage setting circuit is connected with the reference input end of the voltage feedback control circuit;
the TMR element consists of a coil L1 and a resistor R1, wherein both ends of the coil L1 are connected with control current, and the current of the coil L1 can control the resistance value of the resistor R1 of the TMR element;
The power circuit comprises a second operational amplifier D2, a resistor R3, a resistor R4, a resistor R5, a diode D3, a triode Q2 and a MOS tube Q3, wherein two input ends of the second operational amplifier D2 are respectively connected to two ends of a TMR element resistor R1, an output end of the second operational amplifier D2 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with a base electrode of the triode Q2 through the diode D3, an emitter electrode of the triode Q2 is grounded, a collector electrode of the triode Q2 is connected with one end of the resistor R5, the other end of the resistor R5 is connected with a grid electrode of the MOS tube Q3, a resistor R4 is connected between the grid electrode and a drain electrode of the MOS tube Q3, a drain electrode of the MOS tube Q3 is connected with a 28V power supply, and a source electrode of the MOS tube Q3 is connected with a load.
In a second aspect, the present invention provides a method for controlling a solid-state switch with a memory function, applied to the solid-state switch with a memory function in the first aspect, the method comprising:
The reference voltage setting circuit generates reference voltage and inputs the reference voltage into the voltage feedback control circuit, the voltage at two ends of the resistor R2 is subjected to conditioning input into the voltage feedback control circuit through the first operational amplifier D1 to form negative feedback, and the voltage feedback control circuit dynamically controls collector current of the triode Q1 by controlling base current of the triode Q1 to generate high-precision constant current;
Controlling the magnitude and flow direction of the current flowing through the TMR element coil L1, and controlling the resistance value of the resistor R1;
A high-precision constant current flows through the TMR element resistor R1 and generates a voltage, and the voltage at two ends of the TMR element resistor R1 is amplified by the second operational amplifier D2 and then drives the triode Q2, so as to control the on and off of the MOS transistor Q3.
Compared with the prior art, the invention has the following beneficial effects:
Firstly, the switching times are not limited, and the method is suitable for occasions with frequent switching; secondly, the mechanical property is strong, and the phenomena of contact shake, misoperation and the like can not occur in a severe mechanical environment; thirdly, the weight and the volume are lighter, and the use is not limited.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a schematic circuit diagram of a solid-state switch with a memory function according to an embodiment of the disclosure;
FIG. 2 is a graph showing the relationship between the magnetic field generated by the TMR element control current and the resistance of resistor R1;
fig. 3 is an external characteristic diagram of a solid-state switch with a memory function according to an embodiment of the disclosure.
Detailed Description
Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While the invention is susceptible of embodiment in the drawings, it is to be understood that the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided to provide a more thorough and complete understanding of the invention. It should be understood that the drawings and embodiments of the invention are for illustration purposes only and are not intended to limit the scope of the present invention.
The technical scheme of the invention is described in detail below by specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
Fig. 1 is a schematic circuit diagram of a solid-state switch with a memory function according to an embodiment of the disclosure, where, as shown in fig. 1, the circuit diagram includes: the constant current source, TMR element and power circuit, the output end of constant current source connects TMR element, the input end of power circuit connects TMR element;
The constant current source comprises a triode Q1, a resistor R2, a first operational amplifier D1, a voltage feedback control circuit and a reference voltage setting circuit, wherein the collector of the triode Q1 is connected with a 12V power supply, the emitter of the triode Q1 is connected with one end of the resistor R2, the other end of the resistor R2 is connected with one end of a TMR element resistor R1, the other end of the TMR element resistor R1 is grounded, two ends of the resistor R2 are respectively connected with two input ends of the operational amplifier, the output end of the operational amplifier is connected with the feedback input end of the voltage feedback control circuit, the base of the triode Q1 is connected with the output end of the voltage feedback control circuit, and the reference voltage setting circuit is connected with the reference input end of the voltage feedback control circuit;
The TMR element consists of a coil L1 and a resistor R1, wherein the two ends of the coil L1 are connected with control current, and the current of the coil L1 can control the resistance value of the resistor R1 of the TMR element;
the power circuit comprises a second operational amplifier D2, a resistor R3, a resistor R4, a resistor R5, a diode D3, a triode Q2 and a MOS tube Q3, wherein two input ends of the second operational amplifier D2 are respectively connected with two ends of a TMR element resistor R1, the output end of the second operational amplifier D2 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with the base electrode of the triode Q2 through the diode D3, the emitter electrode of the triode Q2 is grounded, the collector electrode of the triode Q2 is connected with one end of the resistor R5, the other end of the resistor R5 is connected with the grid electrode of the MOS tube Q3, the resistor R4 is connected between the grid electrode and the drain electrode of the MOS tube Q3, the drain electrode of the MOS tube Q3 is connected with a 28V power supply, and the source electrode of the MOS tube Q3 is connected with a load R6;
the solid state switch is controlled by the following method:
The reference voltage setting circuit generates 1.0V reference voltage and inputs the reference voltage into the voltage feedback control circuit, the voltage at two ends of the resistor R2 is amplified by 10 times through the first operational amplifier D1 and then is input into the voltage feedback control circuit, the voltage feedback control circuit compares the voltage with the 1.0V voltage generated by the reference voltage setting circuit, and the voltage feedback control circuit dynamically controls the collector current of the triode Q1 by controlling the base current of the triode Q1 to generate high-precision constant current of 10 uA;
The magnitude and flow direction of the current flowing through the TMR element coil L1 are controlled to generate a variable magnetic field, the change of the magnetic field can change the resistance value of the resistor R1, the relation between the magnetic field generated by the TMR element control current and the resistance value of the resistor R1 is shown in fig. 3, and the typical characteristic is that when the current flowing through the coil L1 is "+", r1=7.8k, and when the current flowing through the coil L1 is "-", r1=4.5k;
When r1=7.8k, the voltage V R1 =10ua×7.8k=78 mV at two ends of R1, the voltage flowing through two ends of R1 is amplified by 20 times by the second operational amplifier D2, the amplified voltage is 78mv×20=1.56V, the voltage becomes 1.56-0.7=0.86V after passing through the diode D3, the transistor Q2 is saturated and conducted, the voltage of 28V is divided by R4 and R5, the gate-source voltage vsg=9v of the MOS transistor Q3 is greater than the starting voltage (Vth is 2-4V), the MOS transistor Q3 is saturated and conducted, and the load R6 is supplied with power;
When r1=4.5k, the voltage V R1 =10ua×4.5k=45 mV across R1, the voltage across R1 is amplified 20 times by the second operational amplifier D2, the amplified voltage is 45mv×20=0.9v, the voltage becomes 0.9-0.7=0.2v after passing through the diode D3, the transistor Q2 is not conductive, the MOS transistor Q3 is not conductive, and the load R6 is not powered;
By adjusting parameters, when r1=7.8k, the MOS transistor Q3 is turned on; when r1=4.5k, MOS transistor Q3 is turned off. When iL becomes 0, the MOS transistor keeps the last state unchanged, and referring to fig. 3, by controlling the current i L flowing through the TMR element, the on and off of the solid state switch is realized, and the operation process is as follows:
if the last state of the solid-state switch is "OFF", a forward current I L is applied, when iL is more than or equal to 0 and less than I2, the solid-state switch keeps the "OFF" state, when iL is more than or equal to I2, the solid-state switch jumps from the "OFF" state to the "ON" state, when il=0, the solid-state switch keeps the "ON" state until iL is more than or equal to I1, the solid-state switch jumps from the "ON" state to the "OFF" state, when iL is less than or equal to I1, the solid-state switch keeps the "OFF" state unchanged, and at the moment, if il=0, the solid-state switch keeps the "OFF" state unchanged.
Claims (2)
1. A solid state switch having a memory function, comprising: a constant current source, a TMR element and a power circuit, wherein the output end of the constant current source is connected with the TMR element, and the input end of the power circuit is connected with the TMR element;
the constant current source comprises a triode Q1, a resistor R2, a first operational amplifier D1, a voltage feedback control circuit and a reference voltage setting circuit, wherein the collector of the triode Q1 is connected with a 12V power supply, the emitter of the triode Q1 is connected with one end of the resistor R2, the other end of the resistor R2 is connected with one end of a TMR element resistor R1, the other end of the TMR element resistor R1 is grounded, two ends of the resistor R2 are respectively connected with two input ends of the operational amplifier, the output end of the operational amplifier is connected with the feedback input end of the voltage feedback control circuit, the base of the triode Q1 is connected with the output end of the voltage feedback control circuit, and the reference voltage setting circuit is connected with the reference input end of the voltage feedback control circuit;
the TMR element consists of a coil L1 and a resistor R1, wherein the two ends of the coil L1 are connected with control current, and the current flowing through the coil L1 can control the resistance value of the resistor R1 of the TMR element;
The power circuit comprises a second operational amplifier D2, a resistor R3, a resistor R4, a resistor R5, a diode D3, a triode Q2 and a MOS tube Q3, wherein two input ends of the second operational amplifier D2 are respectively connected to two ends of a TMR element resistor R1, an output end of the second operational amplifier D2 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with a base electrode of the triode Q2 through the diode D3, an emitter electrode of the triode Q2 is grounded, a collector electrode of the triode Q2 is connected with one end of the resistor R5, the other end of the resistor R5 is connected with a grid electrode of the MOS tube Q3, a resistor R4 is connected between the grid electrode and a drain electrode of the MOS tube Q3, a drain electrode of the MOS tube Q3 is connected with a 28V power supply, and a source electrode of the MOS tube Q3 is connected with a load.
2. A method for controlling a solid-state switch with a memory function, applied to the solid-state switch with a memory function according to claim 1, comprising:
The reference voltage setting circuit generates reference voltage and inputs the reference voltage into the voltage feedback control circuit, the voltage at two ends of the resistor R2 is subjected to conditioning input into the voltage feedback control circuit through the first operational amplifier D1 to form negative feedback, and the voltage feedback control circuit dynamically controls collector current of the triode Q1 by controlling base current of the triode Q1 to generate high-precision constant current;
Controlling the magnitude and flow direction of the current flowing through the TMR element coil L1, and controlling the resistance value of the resistor R1;
A high-precision constant current flows through the TMR element resistor R1 and generates a voltage, and the voltage at two ends of the TMR element resistor R1 is amplified by the second operational amplifier D2 and then drives the triode Q2, so as to control the on and off of the MOS transistor Q3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410032605.2A CN118054778A (en) | 2024-01-08 | 2024-01-08 | Solid-state switch with memory function and control method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410032605.2A CN118054778A (en) | 2024-01-08 | 2024-01-08 | Solid-state switch with memory function and control method |
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| CN118054778A true CN118054778A (en) | 2024-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202410032605.2A Pending CN118054778A (en) | 2024-01-08 | 2024-01-08 | Solid-state switch with memory function and control method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200501161A (en) * | 2003-03-24 | 2005-01-01 | Tdk Corp | Magnetic memory device and sense amplifier circuit and read-out method thereof |
| US20090167406A1 (en) * | 2007-12-28 | 2009-07-02 | Nec Electronics Corporation | Read circuit, variable resistive element device, and imaging device |
| CN105185655A (en) * | 2015-08-12 | 2015-12-23 | 江苏多维科技有限公司 | Magnetic resistance relay |
| CN113452244A (en) * | 2021-06-25 | 2021-09-28 | 山东航天电子技术研究所 | LCL distribution control circuit |
-
2024
- 2024-01-08 CN CN202410032605.2A patent/CN118054778A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200501161A (en) * | 2003-03-24 | 2005-01-01 | Tdk Corp | Magnetic memory device and sense amplifier circuit and read-out method thereof |
| US20090167406A1 (en) * | 2007-12-28 | 2009-07-02 | Nec Electronics Corporation | Read circuit, variable resistive element device, and imaging device |
| CN105185655A (en) * | 2015-08-12 | 2015-12-23 | 江苏多维科技有限公司 | Magnetic resistance relay |
| CN113452244A (en) * | 2021-06-25 | 2021-09-28 | 山东航天电子技术研究所 | LCL distribution control circuit |
Non-Patent Citations (1)
| Title |
|---|
| 史晓飞;吕家;张晓明;郭征新;: "低温共烧陶瓷(LTCC)技术研究及在航天领域的应用", 宇航材料工艺, no. 01, 15 February 2015 (2015-02-15), pages 105 - 107 * |
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