CN117980825A - Optical component set, in particular illumination device for microlithographic projection exposure apparatus - Google Patents
Optical component set, in particular illumination device for microlithographic projection exposure apparatus Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 47
- 238000005286 illumination Methods 0.000 title claims abstract description 30
- 230000005855 radiation Effects 0.000 claims abstract description 64
- 230000003595 spectral effect Effects 0.000 claims abstract description 26
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 5
- 238000002310 reflectometry Methods 0.000 claims description 41
- 210000001747 pupil Anatomy 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 19
- 230000010287 polarization Effects 0.000 claims description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000737 periodic effect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- PNXKRHWROOZWSO-UHFFFAOYSA-N [Si].[Ru] Chemical compound [Si].[Ru] PNXKRHWROOZWSO-UHFFFAOYSA-N 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Abstract
The invention relates to an optical component group, in particular an illumination device for a microlithographic projection exposure apparatus, comprising a first reflective component having a first reflective layer system and a second reflective component having a second reflective layer system, wherein the first reflective component and the second reflective component correspond in terms of the geometry of their optically effective surfaces, and wherein the spectral reflection profile (r 1s(λ),r1p (λ)) of the first reflective layer system differs from the corresponding spectral reflection profile (r 2s(λ),r2p (λ)) of the second reflective layer system in that: the spectral reflectance profile of the first reflective layer system describes the corresponding wavelength dependence of the reflectance in the case of s-polarized radiation and p-polarized radiation, at a specific wavelength interval and at a specific incident angle of incident electromagnetic radiation.
Description
Cross Reference to Related Applications
The present invention claims priority from german patent application DE10 2021 210491.6, filed on 9 months 21 of 2021. The contents of this application are incorporated by reference herein.
Technical Field
The invention relates to an optical component set, in particular an illumination device for a microlithographic projection exposure apparatus.
Background
Microlithography is used for the production of microstructured components such as, for example, integrated circuits or LCDs. Microlithography processes are carried out in so-called projection exposure apparatuses, which comprise an illumination device and a projection lens. The image of the mask (reticle) illuminated by means of the illumination device is here projected by means of a projection lens onto a substrate (for example, a silicon wafer) coated with a photosensitive layer (photoresist) and arranged in the image plane of the projection lens, in order to transfer the mask structure onto the photosensitive coating of the substrate.
In projection lenses designed for the EUV range, i.e. at wavelengths of, for example, about 13nm or about 7nm, the mirrors are used as optical components for the imaging process due to the lack of availability of suitable light-transmitting refractive materials.
During operation of the projection exposure apparatus, it is necessary to set a specific polarization distribution in the pupil plane and/or in the reticle in the illumination device in a targeted manner, to optimize the imaging contrast, and also to make a change in the polarization distribution during operation of the projection exposure apparatus. Thus, when considering the so-called vector effect in the case of relatively large Numerical Aperture (NA) values, the use of s-polarized radiation may be advantageous for obtaining as high an image contrast as possible, in particular in the case of projection exposure apparatuses for imaging certain structures.
However, during operation of the projection exposure apparatus, there are also situations in practice in which it is more advantageous to use unpolarized radiation than to use polarized radiation. For example, if the structure to be imaged is not a linear structure or otherwise defines a better directed structure, but is not a better operated structure (e.g., a contact hole) within the scope of the lithographic process, this may be the case even for high Numerical Aperture (NA) values. In the latter case, the use of linearly polarized radiation not only does not give rise to advantages, but may even be a more disadvantageous situation due to the undesired asymmetry that is caused.
A further relevant situation is in fact that the initially generated unpolarized radiation of the EUV source used (e.g. a plasma source) is accompanied in principle by a loss of radiation flux as is conventional, in particular because of the required out-coupling of the correspondingly undesired polarization components, which in turn impair the performance of the projection exposure apparatus when polarized radiation is provided.
Therefore, if the aforementioned aspects are considered, it is also actually necessary to be able to switch between an operating mode with polarized radiation and an operating mode with unpolarized radiation, depending in particular on the structure to be imaged in each case, depending on the operating situation of the projection exposure apparatus.
However, the implementation of such a conversion becomes more difficult in projection exposure apparatuses designed for EUV operation due to the fact that: first, from a practical point of view, the beam geometry should be maintained that is suitable for the light beam entering the illumination device or the light beam exiting the illumination device, and second, there is no suitable transmissive polarizing optics, such as a beam splitter, in the relevant EUV wavelength range. However, polarization operations based on reflection below the Brewster angle (as available in the EUV range) are accompanied by the introduction of one or more additional beam deflections, which in turn lead to significant light losses if at the same time a constant beam geometry is ensured.
For the prior art, reference is made to the disclosures of, for example, patent publications DE 10 2008 002 749 A1, DE 10 2018 207410a1 and m.y.tan et al: OPTICS EXPRESS Vol.17, no.4 (2009), pp.2586-2599, "design a transmissive multilayer polarizer for soft X-rays with optimization function (Design of transmission multilayer polarizer for soft X-ray using a merit function)".
Disclosure of Invention
Against the foregoing background, it is an object of the present invention to provide an optical component set, in particular an illumination device for a microlithographic projection exposure apparatus, which facilitates a flexible switching between operation with polarized radiation and operation without polarized radiation without transmission losses.
This object is achieved according to the features of independent claim 1.
An illumination device for an optical component set, in particular for a microlithographic projection exposure apparatus, comprising:
-a first reflective component having a first reflective layer system; and
-A second reflective component having a second reflective layer system;
-wherein the first reflective member and the second reflective member are geometrically present at their optically active surfaces
The shape aspect corresponds to that of the material; and
-Wherein for a specific wavelength interval and a specific incident electromagnetic radiation angle of incidence the spectral reflection profile (r 1s(λ),r1p (λ)) of the first reflective layer system is different from the corresponding spectral reflection profile (r 2s(λ),r2p (λ)) of the second reflective layer system, the spectral reflection profile of the first reflective layer system describing the respective wavelength dependence of the reflectivity in case of s-polarized radiation and p-polarized radiation.
In particular, the invention is based on the concept of achieving a flexible switching between a polarized and a non-polarized mode of operation in an EUV illumination device, depending on the application situation and the structure to be imaged in each case in the lithography process, which switching avoids additional beam deflection by exchanging the reflective component located in the optical beam path of the illumination device for another reflective component having the same surface geometry but having a different reflective layer system.
In the present invention, an illumination device is understood as an optical system which illuminates a reticle with a defined spatial and angular distribution by means of radiation of a suitably shaped real or virtual light source. In particular, the EUV illumination device according to the invention may receive plasma radiation (i.e. real light source) via a collector. In a further embodiment, the EUV illumination device may also receive radiation from an intermediate focus (i.e. a virtual light source).
According to the invention, two different, interchangeable reflecting components are provided, which differ in their spectral reflection profiles for s-and p-polarized radiation, but correspond to each other in their surface geometry, which have the following features: even after changing one component to another for switching between polarized and non-polarized operation (i.e., change between polarized and non-polarized illumination devices), the overall geometry of the optical beam path within the illumination device remains unchanged, thus eliminating the need for additional beam deflection that would be accompanied by unnecessary light loss.
In this case, the invention is based in particular on the insight obtained by the inventors on the basis of comprehensive simulations that the spectral reflection profiles respectively applicable to s-and p-polarized radiation and provided by the respective reflection layer systems of the reflection means exchanged according to the invention can be moved in a targeted manner with respect to the relevant "transmission interval" of the entire optical system (i.e. in particular the subsequent optical means of the illumination means in the optical beam path) by appropriate adjustment (e.g. thickness scaling of the individual layers of the layer stack forming the reflection layer system).
This purposeful adjustment or shifting of the spectral reflection profile for s-and p-polarized radiation can be achieved in turn, in particular, in that, for the reflective component used in the "polarization operation" of the illumination device or the projection exposure apparatus, the respective maximum reflectance value for the spectral reflection profile for s-polarized radiation, but not for the spectral reflection profile for p-polarized radiation, lies within the transmission interval (transmission interval) of the optical system. In contrast, the target adjustment or shifting of the spectral reflection curves for s-and p-polarized radiation can be implemented for the reflective component used in the "unpolarized operation" of the illumination device or the projection exposure apparatus such that the maximum reflectance values of the two spectral reflection curves (i.e. the spectral reflection curve of p-polarized radiation and the spectral reflection curve of s-polarized radiation) lie within the transmission range.
According to an embodiment, the wavelength lambda 0 is present as an average wavelength in a specific wavelength interval [ (lambda 0-Δλ/2),(λ0+Δλ0/2) ] of width Δlambda 0, such that the first reflective layer system fulfils the following conditions:
(λ0-Δλ0/2)≥λ1sl,(λ0+Δλ0/2)≤λ1sr
And
(Lambda 0-Δλ0/2)≤λ1pl or (lambda) 0+Δλ0/2)≥λ1pr
Wherein, in the reflection profile (r 1s(λ),r1p (λ)) of the first reflection-layer system, λ 1sl and λ 1pl represent the shortest wavelengths and λ 1sr and λ 1pr represent the longest wavelengths for which in each case s-polarized radiation and p-polarized radiation are reflected with a reflectivity of at least 50% of the maximum reflectivity, respectively.
According to one embodiment, the wavelength Δλ 0 is present as an average wavelength in a specific wavelength interval [ (λ 0-Δλ0/2),(λ0+Δλ0/2) ] of width Δλ 0, such that the second reflective layer system fulfils the following condition:
(λ0-Δλ0/2)≥λ2sl,(λ0+Δλ0/2)≤λ2sr
And
(λ0-Δλ0/2)≥λ2pl,(λ0+Δλ0/2)≤λ2pr
Wherein in the reflection profile (r 2s(λ),r2p (λ), λ 2sl and λ 2pl represent the shortest wavelengths and λ 2sr and λ 2pr represent the longest wavelengths for which in each case s-polarized radiation and p-polarized radiation are reflected with a reflectivity of at least 50% of the maximum reflectivity, respectively.
Advantageously, the two reflective layer systems may have a standard spacing [ (lambda 0-Δλ0/2),(λ0+Δλ0/2) ], such that the aforementioned inequality condition is fulfilled.
According to an embodiment, the wavelength lambda 0 is present as an average wavelength in a specific wavelength interval [ (lambda 0-Δλ0/2),(λ0+Δλ0/2) ] of width Δlambda 0, such that the first reflective layer system fulfils the following conditions:
(λ0-Δλ0/2)≥λ1sl,(λ0+Δλ0/2)≤λ1sr
And
(Lambda 0-Δλ0/2)≤λ1s pl or (lambda) 0+Δλ0/2)≥λ1pr
The second reflective layer system satisfies the following conditions:
(λ0-Δλ0/2)≥λ2sl,(λ0+Δλ0/2)≤λ2sr
And
(λ0-Δλ0/2)≥λ2pl,(λ0+Δλ0/2)≤λ2pr，
Wherein, in the reflection profile (r 1s(λ),r1p (λ)) of the first reflection layer system and the reflection profile (r 2s(λ),r2p (λ)) of the second reflection layer system, λ 1sl、λ1pl、λ2sl and λ 2pl represent the respective shortest wavelengths and λ 1sr、λ1pr、λ2sr and λ 2pr represent the respective longest wavelengths for which in each case s-polarized radiation and p-polarized radiation are reflected with a reflectivity of at least 50% of the maximum reflectivity, respectively.
The width achievable by the reflection profile of the individual mirrors is specified by λ 1sr-λ1sl or λ 2sr-λ2sl. These two values are usually only slightly different and therefore the averageOnly slightly different from the two independent widths. Width Δλ 0 and width/>, of usage regionTypically not independent, as the former is based on multiple reflections of the mirror. The following conditions are generally applicable: /(I)
According to an embodiment, the degree of polarization of the first reflective layer system, defined as the ratio of the reflectivities of s-and p-polarized radiation integrated over the wavelength interval [ (lambda 0-Δλ0/2),(λ0+Δλ0/2) ], is at least 1.5 times greater than the degree of polarization of the second reflective layer system.
According to one embodiment, the optical component group, for the spacingThe reflectivity of the s-polarized radiation in (a) is at least 50% of the maximum transmission of the EUV illumination device, wherein Deltalambda 0 is locatedAndBetween them. The criterion is based on the idea that the whole system can typically have a plurality of reflections, for example ranging from 4 to 9, the width of the transmission range (transmission range) decreasing approximately with the square root of the number of reflections.
In an embodiment of the invention, the first and second reflective components may be mirrors, in particular pupil mirrors with a plurality of pupil facets or field mirrors with a plurality of field facets. In further embodiments, both the first reflective component and the second reflective component may also comprise at least one mirror facet of a facet mirror (in particular a pupil facet mirror or a field facet mirror).
In a further embodiment, both the first and second reflective components may be a collection optic.
In further embodiments, the first and second reflective components may also comprise at least one micromirror of a specular mirror.
According to an embodiment, the first reflective component and the second reflective component are designed for an operating wavelength of less than 30nm, in particular less than 15 nm.
Further developments of the invention can be gathered from the description and the dependent claims.
The invention is explained in more detail below on the basis of exemplary embodiments shown in the drawings.
Drawings
FIGS. 1a to 1d show graphs for elucidating the different reflectivity values of s-polarization and p-polarization, which values can be obtained by varying the layer parameters of the reflective layer system;
FIG. 2 shows that a conventional wavelength-dependent intensity distribution corresponds to an exemplary transmission interval of an optical system;
Fig. 3a to 3b show curves of reflectivity as a function of wavelength for two different reflective layer systems, in each case for s-polarization and p-polarization;
FIGS. 4a to 4b show respective wavelength dependent profiles of the reflectivity of two different reflective layer systems over a larger wavelength range, highlighting exemplary transmission intervals to explain the basic concept of the invention;
fig. 5 shows a diagram for explaining terms used in the present invention;
FIGS. 6a to 6f show graphs showing the layer thicknesses of the periodic layer system for example angles of incidence, wherein for the entire range of r s, layers with minimum and maximum r p are represented in each case;
7 a-7 h show graphs in which the regions in the r s-rp chart that can be used for an exemplary periodic or aperiodic layer stack are expressed as a function of angle of incidence;
Fig. 8 shows a schematic simplified illustration of the structure of a possible lighting device in principle;
FIG. 9 shows a schematic diagram for elucidating an exemplary implementation of the invention in a pupil facet mirror;
FIG. 10 shows a schematic diagram for elucidating a further possible implementation of the invention in a part of a pupil facet mirror;
FIG. 11 shows a schematic diagram for elucidating further possible implementations in the respective pupils of a pupil facet mirror;
FIGS. 12a to 12b show schematic diagrams for explaining further possible implementations of the invention in field facet mirrors; and
Fig. 13 shows a schematic diagram of a basic possible structure of a projection exposure apparatus designed for EUV operation.
Detailed Description
The embodiments of the invention described below have in common the basic concept of providing reflective optical components with different spectral reflection profiles such that for a specific wavelength interval one of the two components is suitable for a polarized mode of operation and the other of the two components is suitable for a non-polarized mode of operation. In this case, the aforementioned wavelength interval may be a transmission interval of the respective optical system (e.g. an illumination device of a microlithographic projection exposure apparatus), for which the object of the reflective optical component of the invention is aimed, and which transmission interval is generally determined by the reflection profile of the remaining optical components present in the optical system (in particular downstream optical components related to the optical beam path).
The principle underlying the aforementioned targeted adjustment of the respective reflective layer systems of the reflective optical component according to the invention for polarized and unpolarized operation, respectively, is explained below first with reference to the diagrams in fig. 1 to 5.
In principle, for a particular reflective layer system for a particular angle of incidence and a particular wavelength spectrum of electromagnetic radiation, a particular value r s of the reflectivity of s-polarized radiation and a particular value r p of the reflectivity of p-polarized radiation are included. Thus, according to FIG. 1a, the reflective layer system can be represented as a single point in the r s-rp chart.
The values of r s and r p depend in turn on the respective reflective layer thicknesses for the specific materials of the individual layers in the reflective layer system, so that a reflective layer system with different value pairs (r s,rp) can be provided by varying these layer thicknesses. Thus, for example, according to fig. 1b, providing a plurality of corresponding reflective layer systems with different value pairs (r s,rp) in each case can cover a certain region in the r s-rp chart. The specific design of this "available area" in the r s-rp chart can in turn be varied by varying the material combinations of the various layers within the reflective layer system, for which purpose fig. 1c shows an exemplary further possible shape of the available area in the r s-rp chart.
Thus, if, above the multiplicity of the provided reflective layer system, a respective different material combination of the individual layers is allowed or present in the multiplicity, a relative union of the relevant available areas occurs according to fig. 1 d.
In principle, therefore, a suitable choice of definition points in the r s-rp diagram, which in turn correspond to a uniquely defined layer structure, can be selected according to the intended use or mode of operation, and after simulation of a plurality of reflective layer systems or reflective optical components formed therefrom, the manufactured reflective optical components can be replaced if necessary. Again, depending on the context of use, this selection may be alternated to maximize the total reflectivity provided by the reflective layer system or to provide a degree of polarization (corresponding to the ratio of the reflectivities obtained for s-polarized radiation and p-polarized radiation, respectively).
In this case it should be observed that the preferred value pair (r s,rp) is ultimately to be practiced as directed to or located at the corresponding edge of the available area, for example according to fig. 1b-1d. These cases can be traced back to the fact that the points in the r s-rp plot which lie within the region enclosed by the edge are therefore generally not preferred, since in each case points or corresponding pairs of values (r s,rp) which lie directly at the edge of the region can be easily found which have a higher overall reflectivity for the same degree of polarization or which produce a higher degree of polarization for the same reflectivity.
The reflective layer system used in the present invention may be both periodic and non-periodic layer systems. To provide different spectral reflection profiles for both s-polarized and p-polarized radiation, the respective layer designs are now suitably varied, with the result that the wavelength dependent distribution of the respective reflectivities r s and r p in the relevant transmission interval ultimately has a suitable shape for polarized or unpolarized operation, respectively.
Fig. 2 initially shows a conventional shape of the spectral radiant flux of an EUV radiation source. The curve is truncated outside the wavelength range, and the image plane or wafer plane in the optical system or the illumination device is actually reached when the corresponding spectral reflection curves of the remaining optical components are taken into account. Since the spectral transmission curve of an optical system or an illumination device generally approaches zero only progressively, only two cut-off wavelengths can be approximately specified in each case.
Fig. 5 shows a diagram of the spectral reflection profile r (λ). Here, the maximum reflectance r m occurs at the wavelength λ m. The shortest wavelength of the reflected radiation is denoted lambda l and its reflectivity is at least 50% of the maximum reflectivity. The longest wavelength of the reflected radiation is denoted lambda r, which has a reflectivity of at least 50% of the maximum reflectivity (corresponding to the reflectivity of r m/2).
Fig. 3a to 3b now show the respective wavelength dependence curves of the reflectivity of s-polarization and p-polarization of two exemplary reflective layer systems (aperiodic molybdenum-silicon layer systems in this example). In this case, the relevant multi-layer design is selected from a plurality of analog layer designs such that: the reflectivity r p of the p-polarized radiation obtained for the reflective layer system according to fig. 3a is a minimum and the reflectivity r p of the p-polarized radiation obtained for the reflective layer system according to fig. 3b is a maximum. The curves of different properties of the wavelength dependent reflectivity, which can be readily seen from a comparison of fig. 3a and 3b, in a corresponding consideration over a relatively large wavelength range, are evident from the fact that the correlation is realized from fig. 4a to 4 b.
As is evident from fig. 4a to 4b, the reflectance peaks obtained for s-polarization and p-polarization, respectively, have different widths, and the peak in the wavelength dependence curve of the reflectance of s-polarization has a larger width than the peak of p-polarization, as expected. With the aforementioned two "extreme" layer designs with respect to reflectivity r p for p-polarization and by taking advantage of these cases it is now achieved that: the two peaks, i.e. for s-polarization and p-polarization, lie within the transmission interval of the reflective layer system according to fig. 4b, and the maximum reflectivity value for s-polarization instead of p-polarization lies within the transmission interval of the reflective layer system according to fig. 4a (for p-polarization the falling slope of the corresponding peak of the reflectivity curve lies instead within the transmission interval according to fig. 4 a).
The reflective layer system according to fig. 4a therefore has a significantly stronger polarization effect on the incident electromagnetic radiation than the reflective layer system according to fig. 4 b. In other words, the reflective layer system according to fig. 4a is suitable for an operation mode with polarized radiation and the reflective layer system according to fig. 4b is suitable for an operation mode with unpolarized radiation.
Implementation of the foregoing concept according to the invention in a reflective layer system in the form of an aperiodic multilayer system now allows both the width and location of the corresponding peak in the wavelength-dependent reflectivity profile to be influenced independently of one another by varying the layer design. For a particular layer design, the respective values of s-polarization and p-polarization are correlated, so the width and location of the peaks of s-polarization and p-polarization cannot be chosen completely independently of each other. However, as explained on the basis of fig. 4a to 4b, this is also not necessary. In contrast, when the invention is implemented in a reflective layer system in the form of a periodic layer system having a certain number of alternating periodic sequences of two different layer materials ("bilayers"), substantially only the position of the peak can be freely selected, while the width of the peak can only be influenced within a limited range.
Tables 1-4 show by way of example aperiodic layer designs, precisely for systems made of molybdenum silicon (MoSi) or ruthenium silicon (RuSi). For a fixed r s = 0.7, the table specifies the layer design with the largest and smallest r p, respectively, in each case.
Fig. 6a to 6h show the layer thicknesses of the periodic layer system for an exemplary angle of incidence. In this case, layers with minimum and maximum r p are depicted for the entire range of r s, respectively. In this case, layers with minimum and maximum r p are depicted for the entire range of r s, respectively. Fig. 6a and 6d show the extremely achievable values of r p, respectively. Fig. 6b and 6e show the thickness of the respective layers: the silicon thickness of maximum r p is indicated by the long dashed line. The thickness of molybdenum or ruthenium of maximum r p is indicated by dashed lines. The silicon thickness of the minimum r p is indicated by the dashed line. The minimum r p molybdenum or ruthenium thickness is represented by a line with a dashed line and two points. Fig. 6c and 6f show the respective cycle thicknesses, that is to say the sum of two individual thicknesses (molybdenum and silicon or ruthenium and silicon).
Fig. 7a to 7h show the range in the r s-rp diagram achievable by MoSi or RuSi through periodic or aperiodic layer stacks as a function of the angle of incidence. The two components, which can be interchanged, need not correspond in terms of material combination (MoSi or RuSi) and/or structure (periodic or aperiodic sequence). In particular for angles very different from 0 deg., the range of choices available in the r s-rp diagram is surprisingly large, with a brewster angle of about 45 deg..
Table 1:
(RuSi; incident angle 60 DEG; r s＝0.7;rp is minimum
The silicon layer of layer 1 is located directly on the substrate. The ruthenium layer of layer 50 forms the entrance face for EUV use radiation. )
Table 2:
(RuSi; incident angle 60 DEG; r s＝0.7;rp is maximum)
The silicon layer of layer 1 is located directly on the substrate. The ruthenium layer of layer 50 forms the entrance face for EUV use radiation. )
Table 3:
(MoSi; incident angle 25 DEG; r s＝0.7;rp is minimum
The silicon layer of layer 1 is located directly on the substrate. The molybdenum layer of layer 50 forms the entrance face for EUV use radiation. )
Table 4:
(MoSi; incident angle 25 DEG; r s＝0.7;rp is maximum
The silicon layer of layer 1 is located directly on the substrate. The molybdenum layer of layer 50 forms the entrance face for EUV use radiation. )
The following concepts according to the invention can in principle be implemented for different components of an optical system or a lighting device: in order to change the mode of operation between "polarized" and "unpolarized", at least one reflective component located in the optical beam path is replaced by a component that corresponds in terms of its surface geometry but differs in terms of the reflective layer system present.
Fig. 8 shows initially a schematic simplified schematic illustration of a possible basic structure of an illumination device of a microlithographic projection exposure apparatus designed for operation in the EUV wavelength range. In this case, EUV radiation generated with EUV radiation source 802 (e.g., a plasma source) reaches field facet mirror 810 having multiple independently adjustable field facets (e.g., for setting different illumination settings) via intermediate focus 801 after reflection at collection mirror 803. EUV radiation is incident on a pupil facet mirror 820 from a field facet mirror 810 and on a reticle 830 from the pupil facet mirror 820, the reticle 830 being located in the object plane of a projection lens (not shown in fig. 8) which is arranged in the optical beam path.
The present invention is not limited to the structure of the lighting device shown in fig. 8. Thus, in a further embodiment, one or more additional optical elements, for example in the form of one or more deflection mirrors, may also be arranged in the beam path.
The following only explains possible embodiments of the "parts exchange" of the present invention with reference to the schematic illustrations of fig. 9 to 12.
Referring to fig. 9, initially, a pupil facet mirror (denoted 920 in fig. 9) may be replaced in its entirety with another pupil facet mirror 920' (which differs from pupil facet mirror 920 in terms of its surface geometry, but in terms of its spectral reflection profile or reflective layer system, according to the concepts of the present invention) to implement the component exchange of the present invention in order to change the mode of operation between "polarized" and "unpolarized". This embodiment is advantageous because only a single component needs to be replaced.
In a further embodiment, as shown in fig. 10, individual portions (represented by reference numerals 1021 through 1024 in fig. 10) of the pupil facet mirror 1020 may also be replaced with other portions (represented by reference numerals 1021 'through 1024' in fig. 10), the respective portions again comprising a plurality of pupil facets. This embodiment is advantageous because the number of elements to be realized as exchangeable is relatively small. In a further embodiment, as shown in fig. 11, a single pupil facet (e.g., 1121 or 1122) of the pupil facet mirror 1120 may also be replaced with another pupil facet 1121 'or 1122' (which is designed to have the same surface geometry but a different spectral reflection profile or reflection layer system in accordance with the concepts of the present invention).
With respect to the reference pupil facet mirror in the previous embodiments, a similar implementation is possible for the field facet mirror.
Fig. 12a to 12b show, only in schematic form, a further embodiment of the exchange of parts of the invention. In this case, a maximum of three field facets 1250, 1250', 1250 "can be arranged on the exchange device 1260 designed as a roller, rotation of which roller allows" switching "between the field facets 1250, 1250', 1250" in the configuration known from patent DE102018207410 A1. By tilting the rotation axis, the selected field facets 1250, 1250' or 1250 "will also tilt to illuminate the desired pupil facets of the pupil facet mirror. In this case, according to the invention, the three field facets 1250, 1250', 1250″ on the common roller have different reflection layer systems.
Referring to fig. 8, in a further variation, a reflective layer system may be attached to the collection mirror 803. A preferred embodiment of a collecting mirror for simplifying the high-precision exchange thereof is known from patent DE102013200368 A1.
Fig. 13 shows a schematic diagram of an exemplary projection exposure apparatus designed for operation in EUV and in which the invention can be implemented. According to fig. 13, the illumination device 1380 in the projection exposure apparatus 1375 designed for EUV comprises a field facet mirror 1381 (with facets 1382) and a pupil facet mirror 1383 (with facets 1384). Light from a light source unit 1385 including a plasma light source 1386 and a condenser 1387 is directed to a field facet 1381. The first telescope 1388 and the second telescope 1389 are disposed in the optical path downstream of the pupil facet mirror 1383. A deflection mirror 1390 is arranged downstream of the optical path, said deflection mirror directing radiation incident thereon to an object field 1391 in an object plane OP of a projection lens 1395, which projection lens comprises six mirrors M1-M6. A reflective structure supporting mask M imaged to the image plane IP by means of a projection lens 1395 (comprising six mirrors M1-M6) is arranged at the position of the object field 1391.
While the invention has been described in terms of specific embodiments, many variations and alternative embodiments will be apparent to those skilled in the art, such as by combinations and/or permutations of the features of the various embodiments. Therefore, it should be understood by those skilled in the art that such variations and alternative embodiments are also encompassed by the present invention, and the scope of the present invention is limited only by the scope of the claims and the equivalents thereof.
Claims (11)
1. An illumination device for an optical component set, in particular for a microlithographic projection exposure apparatus, comprising:
a first reflective component having a first reflective layer system; and
A second reflective component having a second reflective layer system;
wherein the first reflective component and the second reflective component correspond in geometry to their optically active surfaces; and
Wherein the spectral reflection profile (r 1s(λ),r1p (λ)) of the first reflective layer system for a specific wavelength interval and a specific incident angle of incident electromagnetic radiation differs from the corresponding spectral reflection profile (r 2s(λ),r2p (λ)) of the second reflective layer system, the spectral reflection profile of the first reflective layer system describing the respective wavelength dependence of the reflectivity in the case of s-polarized radiation and p-polarized radiation.
2. The optical component set according to claim 1, characterized in that the wavelength λ 0 is present as an average wavelength in a specific wavelength interval [ (λ 0-Δλ0/2),(λ0+Δλ0/2) ] of width Δλ 0, such that the first reflective layer system fulfils the following condition:
(λ0-Δλ0/2)≥λ1sl,(λ0+Δλ0/2)≤λ1sr
And
(Lambda 0-Δλ0/2)≤λ1pl or (lambda 0+Δλ0/2)≥λ1pr,
Wherein in the reflection profile (r 1s(λ),r1p (λ)) of the first reflection-layer system λ 1sl and λ 1pl represent the shortest wavelengths and λ 1sr and λ 1pr represent the longest wavelengths for which in each case s-polarized radiation and p-polarized radiation are reflected with a reflectivity of at least 50% of the maximum reflectivity, respectively.
3. Optical component set according to claim 1 or 2, characterized in that the wavelength λ 0 is present as an average wavelength in a specific wavelength interval [ (λ 0-Δλ0/2),(λ0+Δλ0/2) ] of width Δλ 0, such that the second reflective layer system fulfils the following conditions:
(λ0-Δλ0/2)≥λ2sl,(λ0+Δλ0/2)≤λ2sr
And
(λ0-Δλ0/2)≥λ2pl,(λ0+Δλ0/2)≤λ2pr，
Wherein in the reflection profile (r 2s(λ),r2p (λ)) of the second reflection-layer system λ 2sl and λ 2pl represent the shortest wavelengths and λ 2sr and λ 2pr represent the longest wavelengths for which in each case s-polarized radiation and p-polarized radiation are reflected with a reflectivity of at least 50% of the maximum reflectivity, respectively.
4. The optical component set according to claim 1, characterized in that the wavelength λ 0 is present as an average wavelength in a specific wavelength interval [ (λ 0-Δλ0/2),(λ0+Δλ0/2) ] of width Δλ 0, such that the first reflective layer system fulfils the following condition:
(λ0-Δλ0/2)≥λ1sl,(λ0+Δλ0/2)≤λ1sr
And
(Lambda 0-Δλ0/2)≤λ1pl or (lambda 0+Δλ0/2)≥λ1pr,
And the second reflective layer system satisfies the following condition:
(λ0-Δλ0/2)≥λ2sl,(λ0+Δλ0/2)≤λ2sr
And
(λ0-Δλ0/2)≥λ2pl,(λ0+Δλ0/2)≤λ2pr，
Wherein, in the reflection profile (r 1s(λ),r1p (λ)) of the first reflection layer system and the reflection profile (r 2s(λ),r2p (λ)) of the second reflection layer system, λ 1sl、λ1pl、λ2sl and λ 2pl represent the shortest wavelengths and λ 1sr、λ1pr、λ2sr and λ 2pr represent the respective longest wavelengths for which in each case s-polarized radiation and p-polarized radiation are reflected with a reflectivity of at least 50% of the maximum reflectivity, respectively.
5. A set of optical components as claimed in any one of the preceding claims, characterized in that the degree of polarization of the first reflective layer system, defined as the ratio of the reflectivities of s-and p-polarized radiation integrated over the wavelength interval [ (λ 0-Δλ0/2),(λ0+Δλ0/2) ], is at least 1.5 times greater than the degree of polarization of the second reflective layer system.
6. An optical component set as claimed in any one of the preceding claims, wherein the optical component set is for spacingThe reflectivity of the s-polarized radiation in (a) is at least 50% of the maximum transmission of the EUV illumination device, wherein Deltalambda 0 is locatedAndBetween them.
7. The set of optical components according to any one of claims 1 to 6, characterized in that both the first reflective component and the second reflective component comprise at least one mirror facet of a facet mirror (810), in particular a pupil facet mirror (820, 920, 1020, 1120) or a field facet mirror (810).
8. The set of optical components according to any one of claims 1 to 6, characterized in that both the first reflecting component and the second reflecting component are mirrors, in particular pupil mirrors (820, 920, 1020, 1120) having a plurality of pupil facets or field mirrors (810) having a plurality of field facets.
9. The set of optical components of any one of claims 1 to 6, wherein both the first reflective component and the second reflective component are collection mirrors (803).
10. The set of optical components of any one of claims 1 to 6, wherein both the first reflective component and the second reflective component comprise micromirrors of a specular reflector.
11. Optical component set according to one of the preceding claims, characterized in that the first reflecting component and the second reflecting component are designed for operating wavelengths of less than 30nm, in particular less than 15 nm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102021210491.6 | 2021-09-21 | ||
| DE102021210491.6A DE102021210491A1 (en) | 2021-09-21 | 2021-09-21 | Optical component group, in particular for use in an illumination device of a microlithographic projection exposure system |
| PCT/EP2022/073980 WO2023046421A1 (en) | 2021-09-21 | 2022-08-29 | Optical component group, in particular for use in an illumination device of a microlithographic projection exposure apparatus |
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| CN117980825A true CN117980825A (en) | 2024-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202280063415.6A Pending CN117980825A (en) | 2021-09-21 | 2022-08-29 | Optical component set, in particular illumination device for microlithographic projection exposure apparatus |
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| Country | Link |
|---|---|
| US (1) | US20240255856A1 (en) |
| JP (1) | JP2024533994A (en) |
| KR (1) | KR20240063118A (en) |
| CN (1) | CN117980825A (en) |
| DE (1) | DE102021210491A1 (en) |
| TW (1) | TW202326298A (en) |
| WO (1) | WO2023046421A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008002749A1 (en) | 2008-06-27 | 2009-12-31 | Carl Zeiss Smt Ag | Illumination optics for microlithography |
| DE102009045135A1 (en) * | 2009-09-30 | 2011-03-31 | Carl Zeiss Smt Gmbh | Illumination optics for microlithography |
| JP6137179B2 (en) * | 2011-07-26 | 2017-05-31 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Optical system of microlithography projection exposure apparatus and microlithography exposure method |
| DE102012203950A1 (en) * | 2012-03-14 | 2013-09-19 | Carl Zeiss Smt Gmbh | Illumination optics for a projection exposure machine |
| DE102013200368A1 (en) | 2013-01-14 | 2014-07-17 | Carl Zeiss Laser Optics Gmbh | Collector mirror unit for extreme ultraviolet lithography, has collector mirror for reflection of electromagnetic radiation emitted by plasma source, where reference surfaces are aligned with respect to specific point in space |
| DE102018207410A1 (en) | 2018-05-14 | 2019-05-23 | Carl Zeiss Smt Gmbh | Facet mirror for illumination optics for projection lithography |
| DE102019200193B3 (en) * | 2019-01-09 | 2020-02-06 | Carl Zeiss Smt Gmbh | Optical system for a projection exposure system |
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2021
- 2021-09-21 DE DE102021210491.6A patent/DE102021210491A1/en active Pending
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2022
- 2022-08-29 CN CN202280063415.6A patent/CN117980825A/en active Pending
- 2022-08-29 WO PCT/EP2022/073980 patent/WO2023046421A1/en active Application Filing
- 2022-08-29 JP JP2024508054A patent/JP2024533994A/en active Pending
- 2022-08-29 KR KR1020247008936A patent/KR20240063118A/en unknown
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| JP2024533994A (en) | 2024-09-18 |
| US20240255856A1 (en) | 2024-08-01 |
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| WO2023046421A1 (en) | 2023-03-30 |
| DE102021210491A1 (en) | 2023-03-23 |
| KR20240063118A (en) | 2024-05-09 |
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