CN117937223A - Passive Q-switched laser and Raman-LIBS combined device - Google Patents
Passive Q-switched laser and Raman-LIBS combined device Download PDFInfo
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- CN117937223A CN117937223A CN202410114115.7A CN202410114115A CN117937223A CN 117937223 A CN117937223 A CN 117937223A CN 202410114115 A CN202410114115 A CN 202410114115A CN 117937223 A CN117937223 A CN 117937223A
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- 238000002536 laser-induced breakdown spectroscopy Methods 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 17
- 239000005357 flat glass Substances 0.000 claims abstract description 13
- 238000006073 displacement reaction Methods 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 11
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 230000006835 compression Effects 0.000 claims abstract description 10
- 238000007906 compression Methods 0.000 claims abstract description 10
- 239000012788 optical film Substances 0.000 claims description 42
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 239000005355 lead glass Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 230000010287 polarization Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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Abstract
The invention discloses a passive Q-switching laser and a Raman-LIBS (laser induced polarization beam splitter) combined device, wherein the passive Q-switching laser comprises a semiconductor laser, a fast axis compression lens, a semiconductor laser protection glass, a first focusing lens, a light equalizing lens, a second focusing lens, an input resonant cavity mirror, a gain medium, a passive Q-switching crystal, an output resonant cavity mirror, window glass and a displacement mechanism which are sequentially arranged, and the displacement mechanism drives the passive Q-switching crystal to reciprocate on and off an optical path. The passive Q-switched laser capable of being switched between the continuous working mode and the pulse working mode can effectively realize the switching of the laser working in the pulse state and the continuous state, the peak power in the pulse mode is far higher than the power in the continuous state, in addition, the overall energy consumption is lower, the service life is long, the stability of output laser is high, and the application range is wider. The Raman-LIBS combined device adopting the passive Q-switched laser can excite the Raman signal and the LIBS signal by only one laser.
Description
Technical Field
The invention relates to a passive Q-switched laser capable of being switched between continuous and pulse working modes and a Raman-LIBS combined device adopting the passive Q-switched laser, and relates to the technical field of laser equipment.
Background
LD pumping passive Q-switched laser is an important technology for obtaining high pulse energy, high repetition frequency, large peak power and narrow pulse laser output. In the middle and small power solid laser device, the passive Q-switching technology is widely applied due to the advantages of low price, reliable operation, simple structure and the like, and the body shadow is spread over various application fields such as medical treatment, marking, fiber laser, distance measurement, spectral analysis and the like. With the gradual development of the laser device towards miniaturization and portability, such as a handheld Laser Induced Breakdown Spectroscopy (LIBS) and other devices, new requirements are put forward for a passive Q-switched laser in the laser device, and in order to ensure that the appearance of the device can meet the aesthetic requirements of human body, the internal laser device must meet the requirements of small volume and light weight, and in order to ensure higher performance, the output single pulse energy of the laser device is required to be as high as possible. The laser has continuous and pulse working states, the prior art can realize continuous and pulse output of the laser by regulating LD current and modulating LD by PWM, but the method has the advantages that the peak power of the laser is the same when continuous and pulse output is carried out, thus the use requirement cannot be met, and in addition, the switching of the two states is realized by controlling the voltage of an acousto-optic (electro-optic) Q-switching device, but the method is not suitable for a passive Q-switching laser, and a silent photo-optic or electro-optic Q-switching device is not high, so the applicability is not high, and the application range is limited.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: a passive Q-switched laser is provided that enables the laser to operate in both pulsed and continuous states with peak power in pulsed mode being much higher than power in continuous.
In order to solve the technical problems, the invention is realized by the following technical scheme:
The passive Q-switched laser comprises a semiconductor laser, a fast axis compression lens, a semiconductor laser protection glass, a first focusing lens, a light homogenizing lens, a second focusing lens, a gain medium, a passive Q-switched crystal and window glass which are sequentially arranged, and further comprises a displacement mechanism, wherein the displacement mechanism drives the passive Q-switched crystal to reciprocate on a light path and outside the light path.
Preferably, the diameter of the fast axis compression lens is set to be 200-1000 mu m, and the two side surfaces in the thickness direction are plated with a light enhancement optical film with the thickness of 700-850 nm.
Preferably, the incidence direction and the emission direction of the light path are respectively the front direction and the back direction of the laser, the front end surface of the protective glass of the semiconductor laser is plated with a light-increasing optical film with the thickness of 700-850nm, and the back end surface is sequentially plated with a light-increasing optical film with the thickness of 700-850nm and a high light-reflecting optical film with the thickness of 1000-1200nm outwards along the thickness direction.
Preferably, the front end face and the rear end face of the window glass are plated with a light enhancement optical film with the thickness of 1000-1200 nm.
Preferably, an input resonant cavity mirror is arranged between the second focusing lens and the gain medium, the input resonant cavity mirror comprises an S1 surface on which light is incident and an S2 surface on which the light is emitted, the S1 surface is plated with a light enhancement optical film with the thickness of 700-850nm, and the S2 surface is plated with a light enhancement optical film with the thickness of 700-850nm and a high reflection optical film with the thickness of 1000-1200nm outwards in sequence along the thickness direction; an output resonant cavity mirror is arranged between the passive Q-switched crystal and the window glass, a part of the reflection optical film with the thickness of 1000-1200nm is plated on the front end face of the output resonant cavity mirror, and a light enhancement optical film with the thickness of 1000-1200nm is plated on the rear end face of the output resonant cavity mirror.
Preferably, both end surfaces of the gain medium are plated with a light enhancement optical film with the thickness of 1000-1200 nm.
Preferably, two end faces of the passive Q-switched crystal are plated with a light enhancement optical film with the thickness of 1000-1200nm, and the rear end face of the Q-switched crystal is plated with a partial reflection film with the thickness of 1000-1200 nm.
Preferably, the front end surface of the gain medium is outwards plated with a light enhancement optical film with the thickness of 700-900nm and a high reflection optical film with the thickness of 1000-1200nm in sequence along the thickness direction.
Preferably, the displacement mechanism adopts a motion motor, and the motion motor drives the passive Q-switched crystal to change the position through a transmission screw rod.
The invention further aims to provide a Raman-LIBS combined device which consists of a display, a main board, a laser focusing lens, a Raman spectrometer, a Raman signal coupling system, a LIBS spectrometer and the passive Q-switched laser.
Compared with the prior art, the invention has the following advantages:
1. The passive Q-switched laser can effectively realize the switching of the laser in the pulse and continuous states, the peak power in the pulse mode is far higher than the power in the continuous state, the overall energy consumption is lower, the service life is long, the stability of output laser is high, and the application range is wider;
2. By adopting the Raman-LIBS combined device of the passive Q-switched laser, only one laser is needed to excite the Raman signal and the LIBS signal.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it will be apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art;
fig. 1 is a schematic diagram of the optical path structure of the passive Q-switched laser described in embodiment 1;
FIG. 2 is a graph of output power versus time for the continuous mode of the passive Q-switched laser described in example 1;
FIG. 3 is a graph of output power versus time for the passive Q-switched laser pulse mode of example 1;
Fig. 4 is a schematic diagram of the optical path structure of the passive Q-switched laser described in embodiment 2;
FIG. 5 is a schematic diagram of the optical path structure when the Raman-LIBS combined device is used for exciting the LIBS signal;
FIG. 6 is a schematic diagram of the optical path structure when the Raman-LIBS combined device according to the invention is used for exciting a Raman signal;
Wherein: 1. a display; 2. a main board; 3. a passive Q-switched laser; 4. A raman spectrometer; 5. a raman signal coupling system; 6. a LIBS signal coupling system; 7. LIBS spectrometer; 8. a laser focusing lens; 9. a sample;
101. A semiconductor laser; 102. a fast axis compression lens; 103. a semiconductor laser protection glass; 104. a first focusing lens; 105. a light equalizing lens; 106. a second focusing lens; 107. inputting a resonant cavity mirror; 108. a gain medium; 109. a passive Q-switched crystal; 110 output resonant cavity mirror; 111. a window glass; 112. a motion motor; 113. a transmission screw rod; 114. a laser beam; 115. backward laser; 116. outputting laser.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which a person of ordinary skill in the art would obtain without inventive faculty, are within the scope of the invention:
Example 1
The passive Q-switched laser shown in fig. 1 comprises a semiconductor laser 101, a fast axis compression lens 102, a semiconductor laser protection glass 103, a first focusing lens 104, a light equalizing lens 105, a second focusing lens 106, a gain medium 108, a passive Q-switched crystal 109 and window glass 111 which are sequentially arranged, and also comprises a displacement mechanism for adjusting the position of the passive Q-switched crystal 109, wherein in practical application, the semiconductor laser generates a laser beam 114, sequentially passes through the device and finally passes through the window glass to be emitted, and output laser 116 with required power is obtained, two end surfaces of the window glass are respectively plated with a light-increasing optical film with the thickness of 1000-1200nm, and in this example, the thickness of the light-increasing optical film plated on the two end surfaces of the window glass is 1100nm; the light equalizing lens can be set as a self-condensing lens, so that after the light beam 114 of the semiconductor laser is coupled to the light equalizing lens through the first focusing lens, the light beam propagates inside the light equalizing lens through reflection, so that the output light beam distribution becomes uniform instead of Gaussian distribution, thereby reducing the thermal effect in the gain medium and greatly improving the stability of the output laser; in order to meet the requirement of conveniently switching between continuous and pulse working modes, the displacement mechanism drives the passive Q-switching crystal to reciprocate between the light path and the outside of the light path, in the embodiment, in order to further conveniently adjust the position, the displacement mechanism is arranged as a motion motor 112, and the motion motor drives the position of the passive Q-switching crystal to change through a transmission screw 113, so that in practical application, when the passive Q-switching crystal is in the light path, the laser generates high-energy pulse laser. When the passive Q-switched crystal is driven by the motion motor to move out of the light path, the laser generates continuous laser. The peak power of the pulse realized by the mode is far higher than the power in the continuous state, so that the actual use requirement is met, and as shown in fig. 2 and 3, the output power in the pulse working mode is obviously higher than the power in the continuous state, and the power difference is approximately 1000 times, so that the use requirement can be effectively met.
In this embodiment, the diameter of the fast axis compression lens is 680 μm, and the two side surfaces in the thickness direction of the fast axis compression lens are coated with a 850nm light enhancement optical film, so that the fast axis compression lens can effectively compress the divergence angle of the semiconductor laser, increase the laser spot of the semiconductor, reduce the thermal effect in the gain medium, and improve the stability.
In this embodiment, the front end surface of the semiconductor laser protection glass is coated with a light-increasing optical film with a thickness of 850nm, and the rear end surface is sequentially coated with a light-increasing optical film with a thickness of 850nm and a high light-reflecting optical film with a thickness of 1100nm, so that when laser is generated in the gain medium, a part of the laser propagates forward to form output laser, and a part of the laser propagates backward to form backward light, and if the backward light irradiates the semiconductor laser, the die of the semiconductor laser is damaged for a long time, and therefore the semiconductor laser can be prevented from being damaged by the semiconductor laser protection glass, and the service life of the laser is prolonged. In addition, after the backward laser 115 incident on the protective glass is reflected, the backward laser is returned to the gain medium to form positive feedback, and the threshold current of the laser can be reduced due to the fact that the protective glass is placed in the laser, so that the power consumption of the whole laser is reduced, and electricity is saved.
As a preferred implementation manner in this example, as shown in fig. 1, in order to improve the performance of the laser and improve the stability of the laser output, an input resonant cavity mirror 107 is disposed between the second focusing lens and the gain medium, where the input resonant cavity mirror includes an S1 plane on which light is incident and an S2 plane on which light is emitted, in this example, the S1 plane is coated with a light enhancement optical film with a thickness of 850nm, and the S2 plane is sequentially coated with a light enhancement optical film with a thickness of 850nm and a high reflection optical film with a thickness of 1100 nm; an output resonant cavity mirror 110 is arranged between the passive Q-switching crystal and the window glass, a 1105nm thick partial reflection optical film is plated on the front end face of the output resonant cavity mirror, and a 1105nm thick light enhancement optical film is plated on the rear end face of the output resonant cavity mirror.
Example 2
As shown in fig. 4, the difference between this embodiment and embodiment 1 is that the input and output resonator mirrors are not provided, but a 850nm thick light-increasing optical film is coated on the front end surface of the gain medium, and then a 1105nm thick high light-reflecting optical film is coated on the outer side of the light-increasing optical film. The rear end face of the Q-switched crystal is plated with a 1100nm thick part reflecting film, so that the functions of an input resonant cavity mirror and an output resonant cavity mirror can be realized, and the stability of laser output is improved.
Example 3
In this example, a raman-LIBS combined device is provided, and referring to fig. 5, the combined device is composed of a display 1, a main board 2, a laser focusing lens 8, a raman spectrometer 4, a raman signal coupling system 5, a LIBS signal coupling system 6, a LIBS spectrometer 7 and a passive Q-switched laser 3.
The raman test requires a continuous light source, and the LIBS test requires a high-energy pulse light source, therefore, the existing raman-LIBS combined device usually adopts two lasers to excite signals respectively, while the embodiment adopts a passive Q-switched laser capable of switching between continuous and pulse working modes, so that the raman signal and the LIBS signal can be excited by adopting one laser.
Specifically, referring to fig. 5, when the telescopic motor in the passive Q-switched laser is in an extended state, the passive Q-switched crystal extends into the optical path, the laser outputs high-energy pulse laser, and after the laser is focused on the sample 9 by the laser focusing lens, a plasma signal is generated, and after the signal is received by the LIBS receiving system, the signal is transmitted to the LIBS spectrometer, so that an atomic characteristic spectrum signal of the sample is obtained.
When the telescopic motor in the passive Q-switched laser is in a contracted state, as shown in fig. 6, the Q-switched crystal is separated from the optical path, the laser works in a continuous mode to generate continuous laser, the laser is focused at the moment, a Raman signal is excited, and the Raman signal is received by the Raman signal collecting system and then transmitted to the Raman spectrometer, so that the Raman spectrum is received.
It is emphasized that: the above embodiments are merely preferred embodiments of the present invention, and the present invention is not limited in any way, and any simple modification, equivalent variation and modification made to the above embodiments according to the technical substance of the present invention still fall within the scope of the technical solution of the present invention.
Claims (10)
1. A passive Q-switched laser, characterized by: the device comprises a semiconductor laser, a fast axis compression lens, a semiconductor laser protection glass, a first focusing lens, a light homogenizing lens, a second focusing lens, a gain medium, a passive Q-switching crystal and window glass which are sequentially arranged, and further comprises a displacement mechanism, wherein the displacement mechanism drives the passive Q-switching crystal to reciprocate on a light path and outside the light path.
2. A passive Q-switched laser as defined in claim 1, wherein: the diameter of the fast axis compression lens is set to be 200-1000 mu m, and the two side surfaces in the thickness direction are plated with a light enhancement optical film with the thickness of 700-850 nm.
3. A passive Q-switched laser as defined in claim 2, wherein: the incidence direction and the emission direction of the light path are respectively the front and the back directions of the laser, the front end face of the semiconductor laser protection glass is plated with a light-increasing optical film with the thickness of 700-850nm, and the back end face is sequentially plated with a light-increasing optical film with the thickness of 700-850nm and a high light-reflecting optical film with the thickness of 1000-1200nm outwards along the thickness direction.
4. A passive Q-switched laser as defined in claim 1, wherein: the front and back end surfaces of the window glass are plated with a layer of light-increasing optical film with the thickness of 1000-1200 nm.
5. A passive Q-switched laser as defined in claim 1, wherein: an input resonant cavity mirror is arranged between the second focusing lens and the gain medium, the input resonant cavity mirror comprises an S1 surface on which light is incident and an S2 surface on which the light is emitted, the S1 surface is plated with a light enhancement optical film with the thickness of 700-850nm, and the S2 surface is sequentially plated with a light enhancement optical film with the thickness of 700-850nm and a high reflection optical film with the thickness of 1000-1200nm outwards along the thickness direction; an output resonant cavity mirror is arranged between the passive Q-switched crystal and the window glass, a part of the reflection optical film with the thickness of 1000-1200nm is plated on the front end face of the output resonant cavity mirror, and a light enhancement optical film with the thickness of 1000-1200nm is plated on the rear end face of the output resonant cavity mirror.
6. A passive Q-switched laser as defined in claim 1, wherein: both end surfaces of the gain medium are plated with a light enhancement optical film with the thickness of 1000-1200 nm.
7. The passive Q-switched laser of claim 5, wherein: both end surfaces of the passive Q-switched crystal are plated with a light enhancement optical film with the thickness of 1000-1200 nm.
8. The passive Q-switched laser of claim 4, wherein: the front end surface of the gain medium is sequentially plated with a light enhancement optical film with the thickness of 700-900nm and a high reflection optical film with the thickness of 1000-1200nm outwards along the thickness direction; the rear end face of the Q-switched crystal is plated with a layer of partial reflecting film with the thickness of 1000-1200 nm.
9. A passive Q-switched laser as defined in claim 1, wherein: the displacement mechanism adopts a motion motor, and the motion motor drives the passive Q-switched crystal to change the position through a transmission screw rod.
10. A raman-LIBS combination, characterized by: the combined device consists of a display, a main board, a laser focusing lens, a Raman spectrometer, a Raman signal coupling system, a LIBS spectrometer and the passive Q-switched laser according to any one of claims 1 to 9.
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| CN202410114115.7A CN117937223A (en) | 2024-01-27 | 2024-01-27 | Passive Q-switched laser and Raman-LIBS combined device |
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| CN202410114115.7A CN117937223A (en) | 2024-01-27 | 2024-01-27 | Passive Q-switched laser and Raman-LIBS combined device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118392849A (en) * | 2024-06-06 | 2024-07-26 | 津海威视技术(天津)有限公司 | LIBS and Raman combination spectrum-based detection method and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118392849A (en) * | 2024-06-06 | 2024-07-26 | 津海威视技术(天津)有限公司 | LIBS and Raman combination spectrum-based detection method and device |
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