CN117912747A - Transparent conductive film and method for manufacturing same - Google Patents

Abstract

A transparent conductive film and a manufacturing method thereof, the manufacturing method comprises: and feeding a substrate, coating metal nanowire ink on one main surface of the substrate, and then drying the metal nanowire ink to form a metal nanowire layer. And then, performing a first argon plasma treatment process in the vacuum cavity to perform surface treatment on the metal nanowire layer by utilizing argon plasma gas, wherein the argon plasma gas is used for performing treatment on the metal nanowire layer for 15-30 seconds at the working pressure of 50-150 mTorr and the power of 600-1800W. Finally, coating a resin layer on the metal nanowire layer, and curing the resin layer to be compounded with the metal nanowire layer to form the metal nanowire layer, thereby forming the transparent conductive film. The transparent conductive film of the present disclosure provides better conductive performance through better electrical contact effect between the metal nanowires.

Description

Transparent conductive film and method for manufacturing same

Technical Field

The disclosure relates to a transparent conductive film and a manufacturing method thereof.

Background

In recent years, portable electronic products such as mobile phones, notebook computers, satellite navigation systems, and digital video players have widely used touch panels as information communication channels between users and electronic products.

The transparent conductive film of the conventional touch panel employs various metal oxides, such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), cadmium Tin Oxide (CTO), or aluminum doped zinc oxide (AZO), as electrode materials. However, the films made of these metal oxides do not meet the flexibility requirements of the product. Thus, flexible transparent conductors, such as metallic nanowire materials (Metal Nanowires), are currently being developed.

However, there are still many problems to be solved in the application of the metal nanowire material to the touch panel, for example, the optical and conductive properties of the conductive film need to be satisfied at the same time. On the other hand, in order to meet the demand of mass production, flexible transparent conductive films are required to be introduced into a Roll-to-Roll (Roll-to-Roll) process to improve the production efficiency. Therefore, based on the characteristics of the metal nanowire material, the optical and electrical conductivity (surface resistance, or sheet resistance) of the transparent conductive film made of the metal nanowire material are inversely proportional, and on the premise of meeting the requirement of mass production, how to provide the transparent conductive film meeting the optical and electrical conductivity is a current research direction.

Disclosure of Invention

According to some embodiments of the present disclosure, a method for manufacturing a transparent conductive film includes: and feeding a substrate, coating metal nanowire ink on one main surface of the substrate, and then drying the metal nanowire ink to form a metal nanowire layer. Further, a first argon plasma treatment process is performed in the vacuum cavity to perform surface treatment on the metal nanowire layer by using an argon plasma gas, wherein the argon plasma gas is used for performing treatment on the metal nanowire layer for 15-30 seconds at a working pressure of 50-150 mTorr and a power of 600-1800W. Finally, coating a resin layer on the metal nanowire layer, and curing the resin layer to be compounded with the metal nanowire layer to form the metal nanowire layer.

In some embodiments of the present disclosure, the first argon plasma treatment process uses an aluminum substrate electrode to bombard the metal nanowire layer at a distance of 30-60 mm, using a flow rate of 500-1500 sccm argon plasma gas.

In some embodiments of the present disclosure, the metal nanowire material layer comprises a plurality of metal nanowires, and the metal nanowires are dispersed and doped in the resin layer.

In some embodiments of the present disclosure, the metal nanowires have an aspect ratio of 500 to 1500.

In some embodiments of the present disclosure, the method further includes patterning the metal nanowire material layer to form a plurality of wires arranged at intervals.

In some embodiments of the present disclosure, the transparent conductive film includes a visible region and a peripheral region adjacent to at least one side of the visible region, and the method further includes forming a silver material layer on the metal nanowire material layer, and positioning the silver material layer correspondingly in the peripheral region.

In some embodiments of the present disclosure, the patterning process further includes forming a photoresist layer to cover the metal nanowire material layer and the silver material layer, and performing an exposure and development process to pattern the photoresist layer, wherein the patterned photoresist layer defines an electrode pattern in a corresponding visible region and a trace pattern in a corresponding peripheral region. Then, a first etching process is performed to etch the silver material layer by using the trace pattern, and a second etching process is performed to etch the metal nanowire material layer by using the trace pattern and the electrode pattern. Finally, the photoresist layer is removed.

In some embodiments of the present disclosure, the patterning process further includes performing a second argon plasma treatment process after the first etching process to remove the resin remaining after the first etching process from the silver material layer in the peripheral region by using the trace pattern.

According to some embodiments of the present disclosure, a transparent conductive film includes: the metal nanowire material layer is arranged on the main surface of the substrate. Wherein the surface resistance of the transparent conductive film is 20-50Ω/≡.

According to some embodiments of the present disclosure, the transparent conductive film further includes a protective layer disposed on and covering the metal nanowire material layer.

According to the above embodiments of the present disclosure, after the transparent conductive film is processed, the overall surface resistance is effectively reduced, and under the condition that the optical performance requirement can be maintained, that is, the total amount of the metal nanowires is fixed per unit area, the transparent conductive film of the present disclosure can further provide better conductive performance through better electrical contact effect between the metal nanowires. Therefore, the transparent conductive film with both optical and conductive properties is provided on the premise of meeting the demand of mass production.

Drawings

The foregoing and other objects, features, advantages and embodiments of the present disclosure will be apparent from the following description of the drawings in which:

FIG. 1 depicts a schematic diagram of a metal nanowire ink, according to some embodiments of the present disclosure;

FIG. 2 is a schematic cross-sectional view of a transparent conductive film according to some embodiments of the present disclosure;

FIG. 3 is a flow chart of a method for fabricating a transparent conductive film according to some embodiments of the present disclosure;

fig. 4 is a schematic diagram illustrating a structure of a metal nanowire according to some embodiments of the present disclosure; and

FIG. 5 is a flow chart illustrating a patterning process according to some embodiments of the present disclosure.

[ Symbolic description ]

10: Transparent conductive film

100: Substrate material

101: Resin layer

110: Metal nanowire material layer

111: Metal nanowires

112: Dispersion liquid

113: Coating structure

S101 to S113: step (a)

S201 to S213: step (a)

Detailed Description

Various embodiments of the present disclosure are disclosed in the accompanying drawings, and for purposes of explanation, numerous practical details are set forth in the following description. However, it should be understood that these practical details are not to be used to limit the present disclosure. In addition, the dimensions of the various elements in the drawings are not drawn to scale for the convenience of the reader. It should be appreciated that relative terms such as "lower" and "upper" may be used herein to describe one component's relationship to another component as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.

The transparent conductive film prepared by the manufacturing method disclosed by the invention is a transparent conductive film containing a conductive layer of metal nanowires, wherein the metal nanowires form a conductive network. In addition, the transparent conductive film has flexibility, and can be further integrated or applied to various electronic products, such as: display screens, touch screens, electromagnetic shields, smart glasses, optoelectronic devices, and the like, for use as whole planar layers or as electrodes.

[ Metal nanowire ]

The metal nanowires of the present embodiments can be, for example, silver nanowires (silver nanowires), gold nanowires (gold nanowires), or copper nanowires (copper nanowires), with at least one cross-sectional dimension (i.e., the diameter of the cross-section) of a single metal nanowire being less than about 500nm, preferably less than about 100nm, or more preferably less than about 50nm; the metal nano-structure referred to as a "wire" in the present disclosure mainly has a high aspect ratio (length/diameter), for example, between about 500 and 1500, and in particular, the aspect ratio of the metal nano-wire is less than 500, so that the cross contact points between the metal nano-wires are relatively less, and relatively less electrical transmission paths can be provided in the conductive network; conversely, if the aspect ratio is greater than 1500, the morphology of the metal nanowire may be changed, such as curling, and the like, which makes it less easy to perform time control and adjustment in the subsequent process. In some embodiments, the aspect ratio of the metal nanowires is preferably about 1000. Other terms such as silk, fiber, tube, etc. are also within the scope of the present invention if they have the dimensions and high aspect ratio as described above.

[ Metal nanowire ink ]

Referring to fig. 1, a schematic diagram of a metal nanowire ink according to an embodiment of the disclosure is shown. The metal nanowire ink of the present embodiment includes, for example, metal nanowires 111 and a dispersion liquid 112, wherein the metal nanowires 111 are dispersed in the dispersion liquid 112. The dispersion 112 may be, for example, a mixture of a solvent and a filler. In some embodiments, the solvent may be water, alcohols, ketones, ethers, hydrocarbons, aromatic solvents (e.g., benzene, toluene, xylene, or the like), or a combination thereof. In some embodiments, the filler may include an insulating material. For example, the insulating material may include a non-conductive resin or other organic material such as, but not limited to, polyacrylate, epoxy, polyurethane, polysilane, polysilicone, polyethylene, polypropylene, polycarbonate, polyvinyl butyral, poly (silicon-acrylic acid), poly (styrenesulfonic acid), acrylonitrile-butadiene-styrene copolymer, poly (3, 4-ethylenedioxythiophene), ceramic material, or combinations thereof.

In some embodiments, the dispersion 112 may further include a polymeric binder to promote compatibility between the metal nanowires 111 and the dispersion 112 and stability of the metal nanowires 111 in the dispersion 112, so that the metal nanowires 111 may be uniformly dispersed in the dispersion 112. In some embodiments, the polymeric binder may include a polyethylene derivative, such as polyvinylpyrrolidone (polyvinylpyrrolidone, PVP). In some embodiments, the dispersion 112 may further include additives and/or surfactants. Specifically, the additive and/or surfactant may be, for example, carboxymethyl cellulose (carboxymethyl cellulose; CMC), 2-hydroxyethyl cellulose (hydroxyethyl Cellulose: HEC), hydroxypropyl methyl cellulose (hydroxypropyl methylcellulose; HPMC), sulfosuccinate sulfonate, sulfate, phosphate, fluorosurfactant, disulfonate, or a combination thereof.

[ Transparent conductive film ]

Fig. 2 is a schematic cross-sectional view of a transparent conductive film according to an embodiment of the disclosure. As shown in the drawing, the transparent conductive film 10 of the present embodiment includes a substrate 100 and a metal nanowire material layer 110 disposed on the surface of the substrate 100. In some embodiments, the metal nanowire material layer 110 includes a resin layer 101 and metal nanowires 111 dispersed doped to the resin layer 101, wherein the resin layer 101 is also referred to as a matrix (matrix) or an Overcoat (OC). When viewed on a microscopic scale, the metal nanowires 111 are randomly distributed in the resin layer 101 in a non-directional manner, and a portion of the metal nanowires 111 are distributed near the surface of the resin layer 101, so that the surface of the metal nanowire layer 110 presents a rugged pattern. In this regard, the metal nanowires 111 provide paths for transferring electrons by contacting each other at the crossing positions, thereby forming a conductive network, and providing conductive paths for the metal nanowire material layer 110. In some embodiments, the transparent conductive film has a surface resistance of 20 to 50Ω/≡ (per square), preferably 20 to 30Ω/≡.

It is added that the resin layer 101 is provided with the physical shape of the metal nanowire material layer 110 and serves to protect the metal nanowire 111 from chemical or physical damage. In addition, the resin layer 101 may further provide better physical and mechanical properties, such as better adhesion to the substrate 100 for the metal nanowire material layer 110, and better bending and flexibility for the overall transparent conductive film 10.

The optical effect of the transparent conductive film 10 can be adjusted by selecting an appropriate material and thickness of the resin layer 101. In some embodiments, the material of the resin layer 101 may be, for example, polyacrylate, polyurethane, poly (silicon-acrylic), polysilicone, polysilane, epoxy, or a combination thereof. Further, in some embodiments, the thickness of the resin layer 101 is 25nm to 100nm. Specifically, for the transparent conductive film 10 whose sheet resistance requirement is 30Ω/≡, the thickness of the resin layer 101 may be designed to be 40nm or more and 60nm or less. In detail, if the thickness of the resin layer 101 is greater than 60nm, for example, if the thickness is 70nm, the optical performance (for example, the value of the yellowness b) of the transparent conductive film 10 may be difficult to meet the requirements; if the thickness of 100nm is adopted, the contact resistance between the metal nanowire material layer 110 and the conductive layer (such as a metal material layer) (not shown) in the subsequent stacked contact is more likely to be higher; on the other hand, if the thickness of the resin layer 101 is less than 40nm, the ultraviolet light rotation resistance of the transparent conductive film 10 may be insufficient, and thus the reliability detection may not be possible.

In some embodiments, to introduce a roll-to-roll process, the substrate 100 may be, for example, a flexible transparent substrate including, but not limited to, a transparent material such as polyvinyl chloride, polypropylene, polystyrene, polycarbonate, cyclic olefin polymer, cyclic olefin copolymer, polyethylene terephthalate, polyethylene naphthalate, colorless polyimide, and the like.

In some embodiments, if a specific pattern is required for the transparent conductive film 10 to be used as an electrode, the metal nanowire material layer 110 may be patterned to form a wire (not shown) required for the application.

In some embodiments, the transparent conductive film 10 may further include a protection layer (not shown) disposed on and covering the metal nanowire material layer 110, so as to protect the metal nanowire material layer 110 from chemical or physical damage caused by the external environment.

[ Method for producing transparent conductive film ]

Fig. 3 is a flowchart of a method for manufacturing a transparent conductive film according to an embodiment of the disclosure. In the following, the flow of the present embodiment will be described with reference to the transparent conductive film 10 of the embodiment of fig. 2. First, in step S101, a substrate 100 is continuously fed by a roll-to-roll process using a film winding roller. Next, in step S103, the metal nanowire ink is coated on the main surface of the substrate 100 by a coater in a roll-to-roll process, specifically, the metal nanowire ink containing at least the metal nanowires 111 and the dispersion 112 may be deposited or coated on the surface of the substrate 100 by a process such as screen printing, shower nozzle coating, or roller coating. In some embodiments, the metal nanowire ink is applied at a thickness of 20 to 50 μm, preferably 30 μm, referred to herein as wet film thickness. In some embodiments, before step S103 is performed, a pretreatment step may be further performed on the surface of the substrate 100, for example, surface modification (such as surface hardening modification) or additional coating of a functional layer (such as a hardening coating, an adhesive layer or a resin) to improve the strength of the substrate 100 itself or the adhesion between the substrate 100 and other layers.

Next, in step S105, in the roll-to-roll process, the metal nanowire ink coated on the substrate 100 is continuously dried by a dryer (e.g. an oven) to form a metal nanowire layer, specifically, the liquid solvent in the dispersion 112 of the metal nanowire ink may be evaporated/volatilized by using light, heat or other means, so that the metal nanowire layer formed by the conductive network of the metal nanowires 111 is attached to the surface of the substrate 100.

Referring to fig. 4, a schematic structural diagram of a metal nanowire according to an embodiment of the disclosure is shown, in which other polymer adhesives in the dispersion 112 of the metal nanowire ink are coated on the surface of the metal nanowire 111 to form a coating structure 113 substantially conformal to the metal nanowire 111, and the coating structure 113 affects the overall conductivity of the transparent conductive film 10. In conventional processes, the coating structure 113 may be removed by heating, and the higher the temperature, the more the metal nanowire 111 may be removed, however, the disclosure needs to consider the process association and the material characteristics of the metal nanowire 111 before and after the roll-to-roll process, so as to avoid damaging the metal nanowire 111 and/or the substrate 100 due to the over-high temperature, for example, the metal nanowire 111 may easily generate morphology change, wire breakage or oxidation when exceeding 200 ℃, and may affect the conductivity (surface resistance increase). Therefore, in one embodiment, the temperature of the dryer stage in step S105 is set to 100-150 ℃, preferably 120 ℃, and the baking time is set to 2-4 minutes. In this regard, the design of the drying step is matched with a post-treatment step to remove the coating structure 113 remained after the drying in the step S105, so as to achieve the effect of effectively removing the coating structure 113 without damaging the metal nanowires 111 and/or the substrate 100.

In contrast, the post-treatment step (step S107) in this embodiment is to perform a first argon plasma treatment process, also referred to as an argon plasma treatment process, in a vacuum chamber in the same roll-to-roll process, specifically, the post-treatment is to perform a surface treatment on the metal nanowire layer by using an argon plasma gas, wherein the argon plasma gas is used to perform a treatment on the metal nanowire layer for 15 to 30 seconds at a power of 600 to 1800W under a working pressure of 50 to 150mTorr in the vacuum chamber. In more detail, in some embodiments, the metal nanowire layer is processed in a vacuum chamber using an aluminum substrate electrode at a distance of 30-60 mm, preferably 50mm, from the metal nanowire layer, and using a flow rate of 500-1500 sccm (Standard Cubic CENTIMETER PER minutes) of argon plasma gas, preferably 1000 sccm. In this regard, the coating structure 113 coated on the surface of the metal nanowire 111 is effectively removed by the first argon plasma treatment process, so as to further improve the electrical contact between the metal nanowires 111, and for the transparent conductive film 10, a lower surface resistance can be obtained, compared with the conductive film that is not treated by the first argon plasma treatment process of the present embodiment, the transparent conductive film 10 of the present embodiment can reduce the surface resistance by about 10% -20%, so as to effectively improve the electrical conductivity, and if the surface resistance is not greatly reduced by the untreated conductive film, the surface resistance can not be reduced by the transparent conductive film 10 of the present embodiment, the electrical conductivity will not meet the requirement of the product with larger and larger size, and further the applicability of the product is reduced.

Next, in step S109, in the roll-to-roll process, the resin layer 101 is coated by another coating machine to cover the metal nanowire layers, specifically, the material of the coated resin layer 101 tightly fills the pores or gaps between the metal nanowires 111 in the metal nanowire layers. Finally, in step S111, in the roll-to-roll process, the resin layer 101 is cured by a curing machine, so that the resin layer 101 and the metal nanowire layer are compounded to form the metal nanowire layer 110, thereby manufacturing the transparent conductive film 10. In some embodiments, the resin layer 101 may be cured using a heat bake, wherein the heat bake temperature may be between 60 ℃ and 150 ℃.

It should be noted that, in the present disclosure, the first argon plasma treatment process is introduced in the same roll-to-roll process under the consideration of the requirement of mass production, and the finally produced transparent conductive film 10 can have both optical and conductive properties (the surface resistance is reduced by 10% -20%) by the specific parameter control. In other words, the specific parameter control is to avoid the ineffective surface treatment, so that the coating structure 113 remains, and the surface resistance cannot be effectively reduced; on the other hand, the excessive processing is avoided, and the excessive processing does not reduce the surface resistance, but increases the cost, and the production efficiency is not achieved, and in some cases, the excessive processing may even damage the substrate 100.

Examples (example)

The electrical results of the transparent conductive film treated by the first argon plasma treatment process under different control parameter conditions are specifically described below by examples and comparative examples, and it can be concluded that the low surface resistance can be obtained only by the specific parameter control of the present disclosure at the mass production scale.

Referring to table one, examples and comparative examples are shown for comparison, and the transparent conductive film is prepared according to the steps S101 to S111, wherein the metal nanowires in the metal nanowire ink are silver nanowires, and the aspect ratio of the silver nanowires is about 1000; and the metal nanowire ink is coated to a thickness of 30 μm; the Ar plasma is executed by a plasma equipment system of Kuidian nano technology (Creating Nano Technologies), and is controlled by three parameters of pressure (mTorr) of a vacuum cavity, power (W) of argon plasma gas and working time(s) for executing treatment on the metal nanowire layer. Wherein "untreated" means a transparent conductive film that has not been prepared by a first argon plasma treatment process; "treated" means a transparent conductive film obtained by a first argon plasma treatment process; the "rate of change" is the rate of change of the difference in sheet resistance between treated and untreated (Δrs%), and is calculated by: (treated face resistance-untreated face resistance)/untreated face resistance. In the measurement of the sheet resistance, the measurement can be performed by a method known in the art.

List one

As is apparent from the above table, the three parameters of pressure, power and time are controlled within the ranges set in the present disclosure, so that the preferred conductive effect is obtained, and the surface resistance is reduced by about 10% -20%. More specifically, in embodiments 1-5, it can be appreciated that the processing time 30s is the upper threshold of the present disclosure, because the rate of change is close under different power processing, and if the processing time is further increased, the above-mentioned excessive processing is caused. In examples 6 to 10, it can be understood that the processing time of 15s is the lower limit threshold of the present disclosure, and each example can achieve the effect of reducing the surface resistance by more than 10%, and the effect of the change rate also has a consistent increasing trend with the increase of the power. In examples 11 to 12, it was found that the effect of lowering the surface resistance was achieved even at the set pressures of 50 and 150 mTorr. In contrast, in comparative examples 1 and 2, the transparent conductive film prepared by the first argon plasma treatment process set in this way had a higher surface resistance, but could not achieve the effect of lowering the surface resistance, although the lower power (e.g., 200W and 400W) was attempted to be used and the longer working time (e.g., 120 s) was used for the treatment.

With continued reference to fig. 3, in some embodiments, if the transparent conductive film 10 is to be further used as a touch sensor, the metal nanowire material layer 110 may be further patterned on the same reel-to-reel process to form a plurality of wires arranged at intervals (step S113), wherein the wires may be used as electrodes and/or peripheral leads of the touch sensor. In some embodiments, the touch sensor may include a visible region and a peripheral region adjacent to at least one side of the visible region, the electrode is formed in the visible region, and the peripheral lead is formed in the peripheral region. In addition, if the metal nanowire material layer 110 is patterned as an electrode and a peripheral lead, a silver material layer may be further stacked on the peripheral lead in order to further improve the signal transmission capability of the peripheral lead, and in the embodiment of patterning the transparent conductive film 10 as a touch sensor, this will be exemplified in the following.

Referring to fig. 5, a flow chart of a patterning process according to an embodiment of the disclosure is shown. First, in step S201, a silver material layer is formed on the metal nanowire material layer 110, and the silver material layer is located at the peripheral region. In some embodiments, a screen printing process may be utilized to form a silver paste material on the metal nanowire material layer 110 and cured to form a silver material layer. Next, in step S203, a photoresist layer is formed to cover the metal nanowire material layer 110 and the silver material layer. In step S205, an exposure and development process is performed to pattern the photoresist layer, wherein the patterned photoresist layer defines an electrode pattern in the corresponding visible region and a trace pattern in the corresponding peripheral region.

Next, in step S207, a first etching process is performed to etch the silver material layer by using the trace pattern of the photoresist layer. In some embodiments, the main component of the etching liquid used to etch the silver material layer may include ferric nitrate. In addition, since the silver material layer is etched to leave residues, such as resin, in the etching area, in order to prevent the residues from affecting the etching of the subsequent metal nanowire material layer 110, the embodiment further proceeds to step S209 to perform a second argon plasma treatment process, and the silver material layer after the first etching process is further processed by using the trace pattern of the same photoresist layer, more specifically, the residues in the etching area are removed. In some embodiments, the argon plasma treatment process may be, for example, a process using an argon plasma at a working pressure of about 20-200 mTorr for 4.5 minutes with a power of 8kW and a flow of 1000sccm argon, 2000sccm oxygen, and 900sccm tetrafluoromethane.

Next, in step S211, a second etching process is performed along with the same photoresist layer to etch the metal nanowire material layer 110 by using the trace pattern and the electrode pattern of the photoresist layer. Finally, in step S213, the photoresist layer is removed to obtain the transparent conductive film 10 as a touch sensor. The touch sensor has an electrode formed by the metal nanowire material layer 110 in the visible region, and a double-layer wiring formed by laminating the metal nanowire material layer 110 and silver material in the peripheral region.

In this embodiment, the single photoresist layer is used to perform the patterning process, so that the production cost is effectively reduced, and the second argon plasma treatment process is used to make the double-layer wiring have higher etching precision for the part of the peripheral region, so that the line width and the line distance between adjacent wirings are effectively reduced.

Finally, according to the above embodiment of the disclosure, after the transparent conductive film is processed, the overall surface resistance is effectively reduced, and under the condition that the optical performance requirement can be maintained, that is, the total amount of the metal nanowires is fixed in unit area, the transparent conductive film of the disclosure can further provide better conductive performance through better electrical contact effect between the metal nanowires. Therefore, the transparent conductive film with both optical and conductive properties is provided on the premise of meeting the demand of mass production. In addition, when the transparent conductive film is used as the touch sensor, the wiring of the peripheral area of the touch sensor has good signal transmission effect under the simplest process, and the requirements of narrow frames can be met by smaller line width and line distance.

While the present disclosure has been described with reference to the exemplary embodiments, it should be understood that the invention is not limited thereto, but may be variously modified and modified by those skilled in the art without departing from the spirit and scope of the present disclosure, and thus the scope of the present disclosure is defined by the appended claims.

Claims (10)

1.A method for producing a transparent conductive film, comprising:

Feeding a base material;

Coating a metal nanowire ink on one main surface of the substrate;

drying the metal nanowire ink to form a metal nanowire layer;

Performing a first argon plasma treatment process in a vacuum cavity to perform surface treatment on the metal nanowire layer by utilizing an argon plasma gas, wherein the argon plasma gas is used for performing 15-30 seconds of treatment on the metal nanowire layer at a power of 600-1800W under a working pressure of 50-150 mTorr; and

Coating a resin layer on the metal nanowire layer, and curing the resin layer to be compounded with the metal nanowire layer to form a metal nanowire layer.

2. The method of claim 1, wherein the first argon plasma treatment process is a bombardment treatment using an aluminum substrate electrode at a distance of 30-60 mm from the metal nanowire layer, and using a flow rate of the argon plasma gas of 500-1500 sccm.

3. The method of claim 1, wherein the metal nanowire material layer comprises a plurality of metal nanowires, and the metal nanowires are dispersed and doped in the resin layer.

4. The method of claim 3, wherein the metal nanowires have an aspect ratio of 500-1500.

5. The method for producing a transparent conductive film according to claim 1, further comprising:

A patterning process is performed on the metal nanowire material layer to form a plurality of wires which are arranged at intervals.

6. The method of claim 5, wherein the transparent conductive film comprises a visible region and a peripheral region adjacent to at least one side of the visible region, and further comprising:

Forming a silver material layer on the metal nano-wire material layer, and enabling the silver material layer to be correspondingly positioned in the peripheral area.

7. The method of claim 6, wherein the patterning process further comprises:

Forming a photoresist layer to cover the metal nano-wire material layer and the silver material layer;

performing an exposure and development process to pattern the photoresist layer, wherein the patterned photoresist layer is defined with an electrode pattern corresponding to the visible region and a wiring pattern corresponding to the peripheral region;

performing a first etching process to etch the silver material layer by using the trace pattern;

performing a second etching process to etch the metal nanowire material layer by using the trace pattern and the electrode pattern; and

The photoresist layer is removed.

8. The method of claim 7, wherein the patterning process further comprises:

After the first etching process, a second argon plasma treatment process is performed to remove the resin remained on the silver material layer after the first etching process in the peripheral area by using the wiring pattern.

9. A transparent conductive film, comprising:

A substrate; and

A metal nanowire material layer prepared by the preparation method according to any one of claims 1 to 8, which is disposed on the main surface of the substrate;

Wherein the surface resistance of the transparent conductive film is 20-50Ω/≡.

10. The transparent conductive film according to claim 9, further comprising:

And a protective layer arranged on and covering the metal nano wire material layer.