CN117805160A

CN117805160A - Method, device, equipment and storage medium for measuring components of material to be measured

Info

Publication number: CN117805160A
Application number: CN202311703810.9A
Authority: CN
Inventors: 唐寅; 李涛涛; 陆利学
Original assignee: Beijing Wandong Medical Technology Co ltd; Midea Group Co Ltd; Midea Group Shanghai Co Ltd
Current assignee: Beijing Wandong Medical Technology Co ltd; Midea Group Co Ltd; Midea Group Shanghai Co Ltd
Priority date: 2023-12-12
Filing date: 2023-12-12
Publication date: 2024-04-02

Abstract

The embodiment of the application discloses a method, a device, equipment and a storage medium for measuring components of a material to be measured, which relate to the technical field of component analysis and comprise the following steps: obtaining an initial component based on a reference spectrum of the material to be measured; obtaining a simulation spectrum by taking initial components as input values of simulation operation; obtaining a comparison result of the reference spectrum and the simulation spectrum; and if the comparison result does not meet the preset requirement, adjusting an input value according to the comparison result, and performing simulation operation until the comparison result meets the preset requirement, and outputting components of the material to be tested corresponding to the simulation spectrum meeting the preset requirement. According to the method, the initial components of the material to be measured are determined through the measured reference spectrum, the initial components are used as initial input values of simulation operation, and further, the element proportion is continuously adjusted according to the comparison result of the reference spectrum and the simulation spectrum to conduct optimization iteration, so that the accuracy of determining the components of the material to be measured is improved, and the components of the material to be measured can be obtained rapidly and accurately without damaging the material to be measured.

Description

Method, device, equipment and storage medium for measuring components of material to be measured

Technical Field

The present disclosure relates to the field of component analysis technologies, and in particular, to a method, an apparatus, a device, and a storage medium for measuring components of a material to be measured.

Background

In order to analyze the composition of the material, the composition of the material can be measured in a lossy and lossless manner, the measurement result obtained in a lossy manner is accurate, the measured element proportion precision is high, but the original material can be damaged, the measurement cost is relatively high, and the measurement precision is low in a lossless manner although the material is not required to be destroyed.

In order to avoid damage to materials, an X-ray fluorescence analysis method is generally used for realizing nondestructive analysis of material components, and by utilizing the characteristics of different substance characteristic spectrums, the X-ray fluorescence analysis method can perform nondestructive characteristic spectrum detection on various morphological substances at normal pressure, and quantitatively analyze elements through characteristic spectrum wavelength and intensity ratio, so that a measurement result is obtained, but the accuracy of the measurement result is limited.

Disclosure of Invention

The embodiment of the application provides a method, a device, equipment and a storage medium for measuring components of a material to be measured, which are used for solving the defect that a material component analysis method in related technology cannot measure the components of the material with high precision, and the technical scheme is as follows:

In a first aspect, embodiments of the present application provide a method for measuring a component of a material to be measured, including:

acquiring a reference spectrum of a material to be measured, and obtaining initial components of the material to be measured based on the reference spectrum;

taking initial components of the material to be detected as input values of simulation operation, and obtaining a simulation spectrum through the simulation operation;

comparing the reference spectrum with the simulation spectrum to obtain a comparison result of the reference spectrum and the simulation spectrum;

and if the comparison result does not meet the preset requirement, adjusting the input value according to the comparison result, performing simulation operation based on the adjusted input value, and executing the step of obtaining a simulation spectrum through the simulation operation until the comparison result of the reference spectrum and the simulation spectrum meets the preset requirement, and outputting the components of the material to be tested corresponding to the simulation spectrum meeting the preset requirement.

In an alternative aspect of the first aspect, the comparing the reference spectrum with the simulated spectrum, and obtaining a comparison result of the reference spectrum with the simulated spectrum, includes:

and comparing the characteristic spectrum of the simulation spectrum with the characteristic spectrum of the reference spectrum, respectively outputting characteristic peak difference values of the characteristic peaks of the simulation spectrum and the characteristic peaks of the reference spectrum at each characteristic peak position, and outputting the comparison result based on the characteristic peak difference values.

In yet another alternative of the first aspect, after the obtaining the comparison result of the reference spectrum and the simulated spectrum, the method further includes:

if the characteristic peak difference value at any characteristic peak position is larger than a first threshold value, the comparison result does not meet the preset requirement.

In a further alternative of the first aspect, the adjusting the input value according to the comparison result, and performing a simulation operation based on the adjusted input value, includes:

comparing the characteristic peak area of the simulated spectrum at each characteristic peak position with the characteristic peak area of the reference spectrum;

and adjusting the element proportion of the element type at the corresponding characteristic peak position based on the comparison result of the characteristic peak area of the simulation spectrum at each characteristic peak position and the characteristic peak area of the reference spectrum, obtaining an adjusted input value, and performing simulation operation based on the adjusted input value.

In a further alternative of the first aspect, the adjusting the element proportion of the element species at the corresponding characteristic peak position based on the comparison result of the characteristic peak area of the simulated spectrum at the each characteristic peak position and the characteristic peak area of the reference spectrum includes:

If the characteristic peak area at any characteristic peak position of the simulation spectrum is smaller than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, the element proportion of the corresponding element type at the characteristic peak position is improved;

and if the characteristic peak area at any characteristic peak position of the simulation spectrum is larger than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, reducing the element proportion of the corresponding element type at the characteristic peak position.

In yet another alternative of the first aspect, the comparing the reference spectrum with the simulated spectrum, and obtaining a comparison result of the reference spectrum with the simulated spectrum, includes:

comparing the reference spectrum with the simulation spectrum, outputting a continuous spectrum difference value between the simulation spectrum and the reference spectrum, and outputting a comparison result based on the continuous spectrum difference value;

after the comparison result of the reference spectrum and the simulation spectrum is obtained, the method further comprises the following steps:

and if the continuous spectrum difference value is larger than a second threshold value, executing the step of obtaining the initial component of the material to be detected based on the reference spectrum until the continuous spectrum difference value is smaller than or equal to the second threshold value.

In yet another alternative of the first aspect, deriving the initial composition of the material under test based on the reference spectrum comprises:

analyzing the reference spectrum, obtaining a characteristic spectrum of the reference spectrum, determining element types of the material to be detected based on each characteristic peak of the characteristic spectrum, determining the proportion of each element type of the material to be detected according to the light intensity corresponding to each characteristic peak in the characteristic spectrum, and obtaining initial components of the material to be detected based on the element types and the proportion of each element type.

In a second aspect, embodiments of the present application further provide an apparatus for measuring a component of a material to be measured, including:

the reference spectrum unit is used for acquiring a reference spectrum of the material to be measured and obtaining initial components of the material to be measured based on the reference spectrum;

the simulation unit is used for taking the initial components of the material to be tested as the input values of simulation operation, and obtaining a simulation spectrum through the simulation operation;

the analysis unit is used for comparing the reference spectrum with the simulation spectrum and obtaining a comparison result of the reference spectrum and the simulation spectrum;

and the calculating unit is configured to adjust the input value according to the comparison result if the comparison result does not meet the preset requirement, perform simulation operation through the simulation unit based on the adjusted input value, and execute the step of obtaining a simulation spectrum through the simulation operation through the simulation unit until the comparison result of the reference spectrum and the simulation spectrum obtained through the analysis unit meets the preset requirement, and output the component of the material to be tested corresponding to the simulation spectrum meeting the preset requirement.

In a third aspect, an embodiment of the present application further provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor, where the processor implements the method provided by the first aspect or any implementation manner of the first aspect of the embodiment of the present application when the program is executed by the processor.

In a fourth aspect, the present application also provides a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method provided by the first aspect of the embodiments of the present application or any implementation of the first aspect.

The technical scheme provided by some embodiments of the present application has the beneficial effects that at least includes:

according to the method and the device, the initial components of the material to be measured are determined through the reference spectrum obtained through measurement, the simulation is carried out based on the initial components to obtain the simulation spectrum, the error of the initial components relative to the reference spectrum can be determined through comparison of the reference spectrum and the simulation spectrum, the initial components are used as initial input values of simulation operation, the element proportion is continuously adjusted according to the comparison result of the reference spectrum and the simulation spectrum to carry out optimization iteration, the precision of the measured components of the material to be measured is improved, the components of the material to be measured can be obtained rapidly and accurately without damaging the material to be measured, and the defect that the components of the material to be measured cannot be obtained accurately only through a spectrum analysis method is overcome.

Drawings

In order to more clearly illustrate the technical solutions of the present application or related art, the drawings that are required to be used in the embodiments or related art description will be briefly described below, and it is apparent that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for a person of ordinary skill in the art.

Fig. 1 is a schematic view of an application scenario of a method for measuring a component of a material to be measured according to an embodiment of the present application;

FIG. 2 is a flow chart of a method for measuring a constituent of a material to be measured according to an embodiment of the present application;

FIG. 3 is a schematic view of a fit of a reference spectrum to a simulated spectrum provided in an embodiment of the present application;

FIG. 4 is a schematic structural diagram of an apparatus for measuring components of a material to be measured according to an embodiment of the present application;

fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Detailed Description

For the purposes of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions in the present application will be clearly and completely described below with reference to the drawings in the present application, and it is apparent that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

The terms "comprising" and "having" and any variations thereof in the description and claims of the present application and in the foregoing drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or modules is not limited to only those steps or modules but may include other steps or modules not expressly listed or inherent to such process, method, article, or apparatus.

It should be noted that, the term "first\second" referred to in this application merely distinguishes between similar objects, and does not represent a specific ordering for the objects, and it is understood that "first\second" may interchange a specific order or sequence, where allowed. It is to be understood that the "first\second" distinguishing objects may be interchanged where appropriate to enable embodiments of the present application described herein to be implemented in sequences other than those described or illustrated herein.

In the related art, nondestructive measurement of a material composition to be measured is generally realized through X-ray fluorescence analysis, and the measurement of the material composition of an anode target material of an X-ray tube in a CT imaging system is taken as an example, wherein the X-ray tube is a core component of the CT imaging system, the performance of the tube directly influences CT imaging quality, and the quality of X-rays and the service life of the tube are determined by the selection of the anode target material of the X-ray tube. Only the constituent elements of the target material can be obtained from the bulb tube manufacturer, and the proportion relation of the specific constituent elements is not clear, so that the CT imaging system has certain difficulty in simulating the beam current of the bulb tube. The X-ray fluorescence spectrometer can detect the characteristic spectrum of the X-ray beam when the bulb tube emits the beam, and does not need to open a tube core for sampling, so that the bulb tube is not scrapped, and the composition components of the target material are measured nondestructively, but the measurement precision depends on the resolution of the instrument, the measurement condition and the like, the resolution of the existing instrument is insufficient, so that the component analysis result meeting the precision requirement cannot be obtained, and in addition, under the condition that multiple elements exist simultaneously, fluorescent signals generated by different elements possibly interfere with each other, so that the measurement precision is lower.

Therefore, although nondestructive characteristic spectrum detection can be performed on various morphological substances under normal pressure by X-ray fluorescence analysis, the analysis method has a precision limitation, and high-precision element proportion analysis cannot be performed on the material to be detected.

Based on this, the present application provides a method, an apparatus, a device and a storage medium for measuring a component of a material to be measured, and reference is next made to fig. 1, which is a schematic application scenario diagram of a method for measuring a component of a material to be measured according to an exemplary embodiment of the present application. As shown in fig. 1, the application scenario includes a spectrum analyzer 110 and a computing terminal 120. The spectrum analyzer 110 may be connected to the computing terminal 120 through a data transmission line, or may be connected to the computing terminal 120 through a network.

Specifically, the spectrum analyzer 110 may be an X-ray fluorescence spectrometer, so as to implement rapid and nondestructive measurement of material components, X-ray fluorescence (XRF) is a secondary X-ray excited when the material is bombarded by high-energy X-rays, different elements in the material to be measured emit respective characteristic X-rays, the spectrum analyzer 110 is provided with at least one detector 111, the detector 111 receives the secondary X-rays excited by the high-energy X-rays of the material to be measured, the computing unit 112 mounted on the spectrum analyzer 110 may receive the information of the secondary X-rays collected by the detector 111, so as to obtain a spectrum of the secondary X-rays, the computing unit 112 may perform preliminary analysis on the material to be measured based on the spectrum of the secondary X-rays, and display the initial components of the material to be measured obtained by the preliminary analysis on the display screen mounted on the spectrum analyzer 110.

Specifically, the calculation unit 112 of the spectrum analyzer may convert the spectrum of the secondary X-ray into a corresponding signal, and transmit the signal to the calculation terminal 120 through a data transmission line or a network, and may also transmit the components of the material to be measured obtained by the preliminary analysis to the calculation terminal 120.

Specifically, the computing terminal 120 is provided with various software for implementing a method for measuring components of a material to be measured, the computing terminal 120 may receive a spectrum signal sent by the spectrum analyzer 110 through the signal conversion unit 121, and convert the spectrum signal into a reference spectrum obtained by measurement, and the computing terminal 120 may analyze according to the reference spectrum to obtain initial components of the material to be measured or receive initial components of the material to be measured sent by the spectrum analyzer 110.

Specifically, the computing terminal 120 further includes a simulation unit 122, at least one spectrum simulation algorithm is carried in the simulation unit 122, the initial component of the material to be tested is input into the simulation unit 122, a simulation spectrum is obtained through the spectrum simulation algorithm, the computing terminal 120 compares the reference spectrum with the simulation spectrum, the input value of the input simulation unit 122 is adjusted according to the comparison result of the reference spectrum and the simulation spectrum, the comparison result of the reference spectrum and the simulation spectrum is repeated until the comparison result of the reference spectrum and the simulation spectrum meets the preset requirement, and the component of the material to be tested corresponding to the simulation spectrum meeting the preset requirement is output.

It may be appreciated that the computing terminal 120 may be one of a computer, a server, a single-chip microcomputer, etc. with an operation function, which is not limited in the embodiment of the present application.

Next, referring to fig. 1, a method for measuring a component of a material to be measured, which is provided in an embodiment of the present application, will be described by taking a method for measuring a component of a material to be measured performed by a computing terminal as an example. Referring specifically to fig. 2, fig. 2 is a schematic flow chart of a method for measuring a component of a material to be measured according to an embodiment of the present application. As shown in fig. 2, the method comprises the steps of:

s201, acquiring a reference spectrum of the material to be measured, and obtaining initial components of the material to be measured based on the reference spectrum.

Specifically, the spectrum of the material to be measured may be measured by an X-ray fluorescence analysis method, with the measured spectrum being used as a reference spectrum of the material to be measured.

For example, for an anode target of an X-ray tube in a CT imaging system, a spectrum of an X-ray beam emitted from the tube can be measured, i.e., the spectrum of the target, and the measured spectrum of the target is taken as a reference spectrum.

Specifically, the types and approximate proportions of the constituent elements of the material to be measured can be determined according to the spectral line of the obtained reference spectrum, and a preliminary analysis result, namely the initial components of the material to be measured, can be obtained.

It can be understood that, by utilizing the characteristic that atoms of a specific element generate a series of characteristic spectrums with different wavelengths, spectral lines of the characteristic spectrums are arranged in a certain order and maintain a certain intensity ratio, the characteristic spectrums of the elements can be identified through spectral analysis so as to identify the existence of the elements (qualitative analysis), the types of the elements are determined, and the intensity in the characteristic spectrums is related to the content of the corresponding elements in the material to be measured, so that the intensity of the characteristic spectrums can be utilized to infer the content of the elements (quantitative analysis), the proportion of the types of the corresponding elements is measured, and then the initial components of the material to be measured are obtained.

Specifically, a characteristic spectrum of the reference spectrum is obtained by analyzing the reference spectrum, the element types of the material to be measured can be determined based on each characteristic peak of the characteristic spectrum, and more specifically, the element types of the material to be measured can be determined based on the position of the characteristic peak in the spectrum; the proportion of each element type of the material to be measured is determined based on the light intensity corresponding to each characteristic peak in the characteristic spectrum, more specifically, the content of the corresponding element can be determined according to the area of each characteristic peak, and then the proportion of each element type is output, so that the element type composition of the material to be measured and the proportion of each element type can be obtained, and the initial component of the material to be measured is output.

It can be understood that, in the spectrum obtained by performing fluorescence analysis on the material to be measured, the horizontal axis of the spectrum represents the wavelength, the vertical axis represents the light intensity, and the spectrum can be understood as the distribution condition of the light of each wavelength based on the light intensity, so that the type of the element can be determined based on the wavelength range corresponding to the characteristic peak, the content of the element can be determined based on the intensity distribution of the light of each wavelength in the wavelength range corresponding to the characteristic peak, and the type of the element and the proportion of each element of the material to be measured can be obtained based on the spectrum analysis. It will be appreciated that unless specifically stated otherwise, the composition of the material and the proportion of the elements in the material are all expressed in terms of mass fractions, for example, it is noted that the mass fraction of rhenium element in the material to be measured is 20%.

S202, taking initial components of the material to be detected as input values of simulation operation.

S203, obtaining a simulation spectrum through simulation operation.

Optionally, a monte carlo algorithm may be selected to perform a simulation operation, and an initial component of the material to be measured is used as an input value of the simulation operation, and a simulation spectrum is obtained according to the input simulation operation.

Taking an anode target of an X-ray tube in a CT imaging system as an example, taking initial components of the target as input of a monte carlo algorithm through S201, simulating a calculation space through simulation software integrated with the monte carlo algorithm, setting a corresponding electronic model according to exposure conditions of the X-ray tube in the CT imaging system, and executing particle transport calculation of the monte carlo algorithm of interaction between electrons and the target, and collecting X-ray information of a corresponding measurement plane based on the initial components, thereby obtaining an output simulation spectrum.

Optionally, high-precision spectrum simulation can be realized by solving a boltzmann transport equation for the interaction of the accelerated electrons and the target, so that a corresponding simulation spectrum is obtained.

S204, comparing the reference spectrum with the simulation spectrum, and obtaining a comparison result of the reference spectrum and the simulation spectrum.

Specifically, the reference spectrum is measured by a spectrometer, the reference spectrum can be used as a reference for calculating the components of the material to be measured, the simulation spectrum is obtained by a simulation algorithm based on the estimated initial components, the similarity degree of the simulation spectrum relative to the reference spectrum can be determined by comparing the reference spectrum with the simulation spectrum, and the higher the similarity degree is, the closer the initial components are to the real components of the material to be measured, and the higher the precision is.

Specifically, the comparison result of the reference spectrum and the simulation spectrum can be understood as fitting the reference spectrum and the simulation spectrum, that is, the reference spectrum and the simulation spectrum are superposed on the same layer, so that different points of the simulation spectrum compared with the reference spectrum, including but not limited to differences of characteristic spectrums and differences of continuous spectrums, can be intuitively judged.

Specifically, the characteristic spectrum of the simulated spectrum and the characteristic spectrum of the reference spectrum can be compared, the characteristic peak difference value of the characteristic peak of the simulated spectrum and the characteristic peak of the reference spectrum at each characteristic peak position is respectively output, the comparison result is output based on the characteristic peak difference value, namely the output comparison result is a set of each characteristic peak difference value, the characteristic peak difference value can be understood as including but not limited to the situations that the number of the characteristic spectrums is different, the positions of the characteristic spectrums are different, the sizes of the characteristic spectrums are different, and the like.

For example, as shown in a schematic fit diagram of the reference spectrum and the simulated spectrum shown in fig. 3, the solid curve shown in fig. 3 is the reference spectrum C1, the dotted curve shown in fig. 3 is the simulated spectrum C2, the simulated spectrum C2 is significantly different from the reference spectrum C1 in the peaks S1 and S2, and the peaks S3 are substantially coincident, so that a comparison result can be obtained, and the simulated spectrum C2 has two characteristic spectrum differences from the reference spectrum C1.

Alternatively, the curves of the simulated spectrum and the reference spectrum may be compared based on an image analysis algorithm, and the similarity of the simulated spectrum with respect to the reference spectrum may be output by the image analysis algorithm, with the similarity as a comparison result.

Further, after the comparison result of the reference spectrum and the simulation spectrum is obtained, whether the components of the material to be measured corresponding to the simulation spectrum meet the precision requirement or not can be judged based on the comparison result, namely whether the comparison result meets the preset requirement or not is judged.

Specifically, the preset requirements may be set according to specific accuracy requirements and other related conditions, for example, a residual error of the characteristic spectrum and the continuous spectrum of the simulated spectrum relative to the reference spectrum may be calculated, a threshold of the residual error may be set, if the value of the residual error is greater than the corresponding threshold, the comparison result does not conform to the preset requirements, and if the value of the residual error is less than or equal to the corresponding threshold, the comparison result conforms to the preset requirements, and the threshold of the residual error may be set to be 1%.

Optionally, the analysis may be performed based on the difference of the feature spectrum, so as to further determine the similarity between the simulated spectrum and the continuous spectrum, for example, setting the corresponding threshold to be not less than 99% of similarity, if the similarity is less than 99%, then the comparison result is not in accordance with the preset requirement, otherwise, the comparison result is in accordance with the preset requirement.

Taking the characteristic peak S2 as shown in fig. 3 as an example, taking the vertical line segment Q3O3 and Q3 on the simulation spectrum C2 as the vertex of the characteristic peak S2, O3 as the intersection point of the vertical line segment Q3O3 and the transverse axis, taking the vertical line segment Q4O4 and Q4 on the reference spectrum C1 as the vertex of the characteristic peak S2, and O4 as the intersection point of the vertical line segment Q4O4 and the transverse axis, the characteristic peak difference value can be represented by the absolute value of the difference value between the vertical line segment Q3O3 and the vertical line segment Q4O 4; the difference between the vertical coordinates of the vertex Q3 and the vertex Q4 can be directly calculated as the difference of the characteristic peak by directly taking the vertex Q3 of the simulation spectrum C2 at the characteristic peak S2 and the vertex Q4 of the reference spectrum C1.

It will be appreciated that the wavelength ranges of the scattered light corresponding to the same element are the same, and therefore the abscissa of the vertex should be almost the same for the characteristic peak of the same element, and for ease of representation, the abscissa of the characteristic peak S2 of the simulated spectrum C2 and the reference spectrum C1 are illustrated in fig. 3 by non-coincident O3 and O4 points, respectively.

Optionally, if the difference value of the characteristic peak at any characteristic peak position is greater than a first threshold, the comparison result is judged to be not in accordance with the preset requirement, specifically, a corresponding characteristic peak difference value threshold may be set according to each characteristic peak, that is, the first threshold, and if there is a difference value between the characteristic peak difference value of the reference spectrum and the characteristic peak difference value of the simulation spectrum at the characteristic peak position is greater than the set characteristic peak difference value threshold, the comparison result may be judged to be in accordance with the preset requirement.

Further, if the comparison result meets the preset requirement, the step S205 is executed, and the components of the material to be tested are output.

It can be appreciated that in most cases, the comparison result of the simulated spectrum obtained by the initial calculation and the reference spectrum meets the preset requirement, that is, the probability that the initial component meets the measurement precision requirement is low, and multiple iterative calculations are generally required.

If the comparison result does not meet the preset requirement, executing step S206, adjusting the input value according to the comparison result, and performing simulation operation based on the adjusted input value.

Specifically, the comparison result does not meet the preset requirement, which indicates that the components of the material to be tested corresponding to the simulation spectrum do not meet the precision requirement corresponding to the preset requirement, and the input value for performing the simulation operation can be adjusted according to the comparison result of the characteristic spectrum and the simulation spectrum.

It will be appreciated that the types of elements constituting the material to be measured may be determined based on the positions of the characteristic peaks of the characteristic spectrum, and the proportions of the elements may be determined based on the areas of the characteristic peaks of the characteristic spectrum. The characteristic peak height of each point on the characteristic peak represents the light intensity of light with corresponding wavelength, the intensity distribution of light with each wavelength can be determined through the area of the characteristic peak, and then the content of corresponding elements is determined, taking X-ray fluorescence analysis of a certain material to be detected as an example, if the measured area of the characteristic peak of the iron element (Fe) is larger, the higher the light intensity of scattered X-rays in the wavelength range corresponding to the iron element (Fe) is, the more photons pass through in unit area is, and the higher the content of the iron element (Fe) is.

Specifically, if the comparison result shows that the similarity of the simulation spectrum relative to the reference spectrum is 80%, the position of the difference point of the simulation spectrum relative to the reference spectrum can be determined according to the comparison result, and further, the characteristic peak difference value can be determined.

In some embodiments, the input value of the simulation operation may be adjusted according to the characteristic peak difference value, for example, the characteristic peak difference value of the characteristic peak of the simulation spectrum C3 and the characteristic peak of the reference spectrum C4 corresponding to the tungsten element (W) is greater than a first threshold value, the characteristic peak height difference of the characteristic peak of the simulation spectrum C3 and the characteristic peak of the reference spectrum C4 corresponding to the tungsten element (W) may be measured, and the proportion of the tungsten element corresponding to the simulation spectrum C3 may be adjusted according to the numerical value of the height difference in equal proportion.

It can be understood that, since the area corresponding to the characteristic peak is not a regular pattern, the difference in the height of the characteristic peak cannot accurately represent the difference in the area of the characteristic peak, that is, cannot reflect the difference in the light intensity distribution of the characteristic peak, and thus the ratio of the elements can be adjusted by the difference in the height of the characteristic peak, but the accuracy of adjustment is low.

Preferably, the characteristic peak area of the simulated spectrum at each characteristic peak position and the characteristic peak area of the reference spectrum may be compared, and the element proportion of the element type at the corresponding characteristic peak position may be adjusted based on the comparison result of the characteristic peak area of the simulated spectrum at each characteristic peak position and the characteristic peak area of the reference spectrum, so as to obtain an adjusted input value, and a simulation operation may be performed based on the adjusted input value.

Taking the characteristic peak S1 as shown in fig. 3 as an example, the lowest points of the two sides of the simulated spectrum C2 and the reference spectrum C1 at the position of the characteristic peak S2 are overlapped, the left side is the point Q1, the right side is the point Q2, the vertical line segments Q1O1 and Q2O2 perpendicular to the horizontal axis are respectively made to represent the wavelength range of scattered light corresponding to the characteristic peak, the area of an irregular pattern surrounded by the vertical line segments Q1O1, Q2O2 and the simulated spectrum C2 is the characteristic peak area of the simulated spectrum C2 at the characteristic peak S1, and the area of an irregular pattern surrounded by the vertical line segments Q1O1, Q2O2 and the reference spectrum C1 is the characteristic peak area of the reference spectrum C1 at the characteristic peak S1.

More specifically, if the characteristic peak area at any one characteristic peak position of the simulation spectrum is smaller than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, the element proportion of the corresponding element species at the characteristic peak position is increased;

if the characteristic peak area at any characteristic peak position of the simulation spectrum is larger than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, the element proportion of the corresponding element type at the characteristic peak position is reduced.

As illustrated in fig. 3, the characteristic peak area of the simulation spectrum C2 at the characteristic peak S1 is smaller than that of the reference spectrum C1 at the characteristic peak S1, and thus it is necessary to increase the proportion of the corresponding element species at the characteristic peak S1.

Optionally, the proportion of the elements corresponding to the characteristic peaks can be adjusted in equal proportion according to the difference value of the areas of the characteristic peaks, for example, the area of the characteristic peak S4 on the simulation spectrum is about 80% of the area of the characteristic peak S4 on the reference spectrum, the proportion of the tungsten elements corresponding to the characteristic peak S4 on the simulation spectrum is 20%, the updated proportion of the tungsten elements can be estimated based on the ratio of the proportion of the tungsten elements to the area of the characteristic peak S4 on the simulation spectrum and the ratio of the area of the characteristic peak S4 on the reference spectrum, and the following formula is applied:

M ₁ /P ₁ ＝M′ ₁ /P ₀ ；

the proportion of the tungsten element after updating can be calculated to be 25%, and the proportion of the tungsten element in the original input value is updated to be 25%.

Wherein M is ₁ To simulate the proportion of tungsten element corresponding to characteristic peak S4 on spectrum, P ₁ To simulate the area of the characteristic peak S4 on the spectrum, M' ₁ For the ratio of tungsten element after updating calculated based on the characteristic peak area difference, P ₀ Is the area of the characteristic peak S4 on the reference spectrum.

Optionally, the ratio of the areas of the characteristic peaks may be calculated, if the area of the characteristic peak at a certain characteristic peak position in the simulated spectrum is larger than the area of the characteristic peak of the reference spectrum, it indicates that the proportion of the element corresponding to the characteristic peak position is too high in the input value corresponding to the simulated spectrum, and the proportion compression may be performed according to an optimization method such as a simplex method, so as to update the proportion of the element corresponding to the characteristic peak position, and further update to obtain the optimal input value.

It can be appreciated that the corresponding element proportion can also be adjusted step by step according to the gradient descent method, which is not limited in the embodiment of the present application.

After the input value for the simulation operation is updated in the above step, substituting the updated input value into the algorithm of the simulation operation, continuing to execute the step S203, obtaining a simulation spectrum through the simulation operation, continuing to execute the step S204, comparing the reference spectrum with the simulation spectrum, obtaining a comparison result of the reference spectrum and the simulation spectrum, continuously updating the input value according to the comparison result, iterating until the comparison result of the reference spectrum and the simulation spectrum meets the preset requirement, and outputting the components of the material to be tested corresponding to the simulation spectrum meeting the preset requirement.

Specifically, the threshold value of the similarity degree between the reference spectrum and the simulated spectrum may be set as the preset requirement, please refer to the description of the preset requirement in S204.

Optionally, in the process of multiple iterative computation, if the difference value between the characteristic peak of the simulation spectrum and the characteristic peak of the reference spectrum at each characteristic peak position is smaller, the proportion computation is inconvenient, which indicates that the component of the material to be detected corresponding to the simulation spectrum at this time is relatively close to the reference spectrum, the element proportion corresponding to the characteristic peak at each characteristic peak position can be continuously adjusted within a small range, for example, the adjustment direction of the element proportion in the input value can be determined only according to the difference value between the characteristic peak of the simulation spectrum and the characteristic peak of the reference spectrum at each characteristic peak position, and a step-by-step adjustment strategy can be set.

Illustratively, if the characteristic peak area at any one characteristic peak position of the simulated spectrum is smaller than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, increasing the element proportion of the corresponding element species at the characteristic peak position; if the characteristic peak area at any characteristic peak position of the simulation spectrum is larger than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, the element proportion of the corresponding element type at the characteristic peak position is reduced.

Optionally, the amplitude of each adjustment may be set according to the difference value of the characteristic peak areas, for example, the amplitude of each adjustment may be set to be 0.5%, and if the difference value of the characteristic peak areas becomes smaller after the input value is adjusted, the amplitude of each adjustment may be reduced to be 0.25%, and the amplitude of each adjustment is sequentially reduced until the accuracy requirement is met, which is favorable for further improving the accuracy of the measured element proportion.

In a specific embodiment, taking the material component of the detection bulb target as an example, obtaining the target as tungsten-rhenium alloy through characteristic spectrum analysis, performing simulation according to the characteristic spectrum analysis, obtaining the rhenium content as 23%, performing simulation according to the reference spectrum measurement, obtaining a simulation spectrum through first simulation, further comparing the simulation spectrum with the reference spectrum, finding that the characteristic peak area of the rhenium element of the simulation spectrum is smaller than the characteristic peak area of the rhenium element of the reference spectrum, adjusting the proportion of the rhenium element according to the area difference, updating the input value of an input simulation algorithm, for example, updating the input value to 25% according to the characteristic peak area difference, obtaining the updated simulation spectrum through second simulation, further comparing the updated simulation spectrum with the reference spectrum, obtaining the comparison result of the updated simulation spectrum with the reference spectrum, adjusting the proportion of the rhenium element again according to the new comparison result, for example, updating the input value to 26% according to the characteristic peak area difference, performing verification according to the comparison result of the third simulation, and comparing the obtained simulation result with the characteristic peak area of the rhenium element of the reference spectrum to 26%, and the reference spectrum to be smaller than 2%, namely, the input value of the updated simulation spectrum meets the requirement of the rhenium element of the target error, namely, the input value meets the requirement of the calculated proportion of the rhenium element is calculated by the second simulation spectrum: 26% of rhenium element and 84% of tungsten element.

Based on the method for measuring the components of the material to be measured, the continuous spectrum and the characteristic spectrum are measured by using the X-ray fluorescence spectrometer, the measured reference spectrum is compared with the simulation spectrum calculated by the simulation operation, and the initial value measured based on the reference spectrum is used as the initial input value of the simulation operation, so that the number of times of iterative adjustment of the components of the material to be measured can be reduced, and the distribution proportion of target elements with high precision can be determined more quickly by continuously optimizing the iteration through the adjustment of the element proportion.

Compared with the defect that the precision of analyzing the element proportion of the material to be measured only through a spectrum analysis method is limited by the precision of a spectrometer in the related art, the method and the device can not only realize the measurement of the element proportion of the target material on the premise of not damaging the material to be measured, but also obtain the element proportion with high precision by combining with accurate simulation calculation, can rapidly and accurately obtain the analysis result of the element proportion of the material to be measured, are not dependent on the analysis measurement result of the spectrometer, and can further improve the precision of the measured material to be measured on the basis of the initial component obtained by the analysis of the spectrometer.

It will be appreciated that in order to avoid the case of incorrect element types resulting from analysis of the reference spectrum, no reasonable results can be obtained even with multiple iterations when the continuous spectrum (i.e. the entire spectral curve) does not meet the preset requirements.

Thus, after the comparison result of the reference spectrum and the simulated spectrum is obtained in S204, the method further includes:

and if the continuous spectrum difference value is larger than the second threshold value, executing the step of obtaining the initial component of the material to be detected based on the reference spectrum until the continuous spectrum difference value is smaller than or equal to the second threshold value.

Specifically, the second threshold may be understood as a similarity threshold of a continuous spectrum of the reference spectrum and the simulated spectrum, that is, a curve of the reference spectrum or the simulated spectrum, and if the continuous spectrum has a large difference, for example, the similarity is 60%, the similarity threshold set by the second threshold is 90%.

Specifically, the continuous spectrum includes a characteristic spectrum, and the characteristic spectrum is specifically each characteristic peak on the continuous spectrum, and if the number of characteristic peaks of the reference spectrum and the number of characteristic peaks of the simulated spectrum are inconsistent, the difference value of the continuous spectrum is larger than a second threshold value.

Therefore, if the difference value of the continuous spectrum is larger than the second threshold, that is, the similarity degree of the simulated spectrum and the reference spectrum is lower, and the curve and the characteristic peak are not fit, the fact that the element type analyzed according to the reference spectrum is not matched with the element type of the material to be tested or obvious errors exist is indicated, because the calculation of the element type is wrong, whether the element type meets the preset requirement or not is not judged further, the element type is not matched with the requirement, the result meeting the requirement is not necessarily obtained, and therefore the reference spectrum needs to be analyzed again.

By the arrangement, the defects that the initial components substituted into the simulation operation are wrong, the difficulty of iterative calculation is increased, and the components of the material to be tested meeting the precision requirement cannot be obtained through multiple iterations are avoided.

In some embodiments, spectra of a plurality of elements can be obtained by a plurality of single-channel spectrometers, and the spectra of the plurality of single-channel spectrometers can be fitted to obtain a complete spectrum as a reference spectrum.

Similarly, the ratio of the single elements may be calculated respectively, and each of the steps S201 to S206 is performed by substituting only the ratio of one element, for example, measuring the ratio of each element in the alloy composed of the elements E1, E2, and E3, and optionally, the single-channel spectrometer corresponding to two elements of the three elements may measure the spectra of the corresponding elements respectively.

For example, the reference spectrum of the element E1 may be obtained first, and iterative computation may be performed based on the steps S201 to S206 to obtain the proportion of the element E1, and then the reference spectrum of the element E2 may be obtained, and iterative computation may be performed based on the steps S201 to S206 to obtain the proportion of the element E2, and finally the components of the element E1, the element E2, and the element E3 may be integrated.

Based on the arrangement, the method for measuring the components of the material to be measured does not depend on a high-precision spectrometer, and the components of the material to be measured can be accurately measured under the condition that the multichannel spectrometer does not exist, so that the requirements on equipment are greatly reduced, the cost for measuring the components of the material to be measured is reduced, and the use experience of a user is improved.

Referring next to fig. 4, a schematic structural diagram of an apparatus for determining a component of a material to be measured according to an exemplary embodiment of the present application is provided. The device may be implemented as a whole or part of the terminal by software, hardware or a combination of both, or may be integrated on the server as a separate module. The apparatus 400 for measuring a material component to be measured in the embodiment of the present application may be applied to a terminal or a cloud end, where the apparatus 400 includes a reference spectrum unit 410, a simulation unit 420, an analysis unit 430, and a calculation unit 440, where:

a reference spectrum unit 410, configured to obtain a reference spectrum of a material to be measured, and obtain an initial component of the material to be measured based on the reference spectrum;

the simulation unit 420 is configured to obtain a simulation spectrum by using an initial component of the material to be tested as an input value of a simulation operation;

An analysis unit 430, configured to compare the reference spectrum with the simulated spectrum, and obtain a comparison result of the reference spectrum and the simulated spectrum;

the calculating unit 440 is configured to, if the comparison result does not meet the preset requirement, adjust the input value according to the comparison result, perform a simulation operation by the simulation unit 420 based on the adjusted input value, and perform the step of obtaining a simulated spectrum by the simulation operation by the simulation unit 420 until the comparison result of the reference spectrum and the simulated spectrum obtained by the analysis unit 430 meets the preset requirement, and output the component of the material to be tested corresponding to the simulated spectrum meeting the preset requirement.

In some embodiments, the analysis unit 430 is further configured to compare the characteristic spectrum of the simulated spectrum with the characteristic spectrum of the reference spectrum, output a characteristic peak difference value of a characteristic peak of the simulated spectrum and a characteristic peak of the reference spectrum at each characteristic peak position, and output the comparison result based on the characteristic peak difference value.

In some embodiments, the analysis unit 430 is further configured to determine that the comparison result does not meet the preset requirement when the characteristic peak difference value at any characteristic peak position is greater than a first threshold.

In some embodiments, the calculating unit 440 is further configured to compare the characteristic peak area of the simulated spectrum at each characteristic peak position with the characteristic peak area of the reference spectrum, adjust the element proportion of the element type at the corresponding characteristic peak position based on the comparison result of the characteristic peak area of the simulated spectrum at each characteristic peak position with the characteristic peak area of the reference spectrum, obtain an adjusted input value, and perform a simulation operation based on the adjusted input value through the simulation unit 420.

Optionally, when the characteristic peak area at any one characteristic peak position of the simulated spectrum is smaller than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum, the calculating unit 440 increases the element proportion of the corresponding element species at the characteristic peak position; the calculation unit 440 reduces the element ratio of the corresponding element species at the characteristic peak position when the characteristic peak area at any one of the characteristic peak positions of the simulation spectrum is larger than the characteristic peak area at the corresponding characteristic peak position of the reference spectrum.

Optionally, the analysis unit 430 is further configured to compare the reference spectrum with the simulated spectrum, output a continuous spectrum difference value between the simulated spectrum and the reference spectrum, and output the comparison result based on the continuous spectrum difference value;

After the analysis unit 430 obtains the comparison result of the reference spectrum and the simulated spectrum, when the continuous spectrum difference value is greater than a second threshold value, the step of obtaining the initial component of the material to be measured based on the reference spectrum is performed by the reference spectrum unit 410 until the continuous spectrum difference value is less than or equal to the second threshold value.

In some embodiments, the reference spectrum unit 410 is further configured to analyze the reference spectrum, obtain a characteristic spectrum of the reference spectrum, determine an element type of the material to be measured based on each characteristic peak of the characteristic spectrum, determine a proportion of each element type of the material to be measured according to light intensity corresponding to each characteristic peak in the characteristic spectrum, and obtain an initial component of the material to be measured based on the element type and the proportion of each element type.

It should be noted that, in the method for measuring a component of a material to be measured according to the embodiment of the present invention, only the division of the functional modules is used for illustration, and in practical application, the above-mentioned functional distribution may be performed by different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to perform all or part of the functions described above. In addition, the device provided in the above embodiment and the method embodiment for measuring the composition of the material to be measured belong to the same concept, which embody the detailed implementation process in the method embodiment, and are not described herein again.

The following are device embodiments of the present application that may be used to perform method embodiments of the present application. For details not disclosed in the device embodiments of the present application, please refer to the method embodiments of the present application.

The embodiment of the application also provides an electronic device, which comprises a memory, a processor and a computer program stored on the memory and capable of running on the processor, wherein the processor executes the program to realize the steps of the method of any embodiment.

Fig. 5 is a block diagram of an electronic device according to an embodiment of the present application.

As shown in fig. 5, the electronic device 500 includes: a processor 501 and a memory 502.

In this embodiment, the processor 501 is a control center of a computer system, and may be a processor of a physical machine or a processor of a virtual machine. Processor 501 may include one or more processing cores, such as a 4-core processor, an 8-core processor, and the like. The processor 501 may be implemented in at least one hardware form of DSP (Digital Signal Processing ), FPGA (Field-Programmable Gate Array, field programmable gate array), PLA (Programmable Logic Array ).

The processor 501 may also include a main processor and a coprocessor, the main processor being a processor for processing data in an awake state, also referred to as a CPU (Central Processing Unit ); a coprocessor is a low-power processor for processing data in a standby state.

Memory 502 may include one or more computer-readable storage media, which may be non-transitory. Memory 502 may also include high-speed random access memory, as well as non-volatile memory, such as one or more magnetic disk storage devices, flash memory storage devices. In some embodiments of the present application, a non-transitory computer readable storage medium in memory 502 is used to store at least one instruction for execution by processor 501 to implement the methods in embodiments of the present application.

In some embodiments, the electronic device 500 further includes: a peripheral interface 503 and at least one peripheral. The processor 501, memory 502, and peripheral interface 503 may be connected by buses or signal lines. The individual peripheral devices may be connected to the peripheral device interface 503 by buses, signal lines or circuit boards. Specifically, the peripheral device includes: peripheral interfaces 503 in display 504, camera 505 and audio circuitry 506 may be used to connect at least one Input/Output (I/O) related peripheral to processor 501 and memory 502.

In some embodiments of the present application, processor 501, memory 502, and peripheral interface 503 are integrated on the same chip or circuit board; in some other embodiments of the present application, either or both of the processor 501, memory 502, and peripheral interface 503 may be implemented on separate chips or circuit boards. The embodiment of the present application is not particularly limited thereto.

The display 504 is used to display the UI. The UI may include graphics, text, icons, video, and any combination thereof. When the display 504 is a touch screen, the display 504 also has the ability to collect touch signals at or above the surface of the display 504. The touch signal may be input as a control signal to the processor 501 for processing. At this point, the display 504 may also be used to provide virtual buttons and/or virtual keyboards, also referred to as soft buttons and/or soft keyboards.

In some embodiments of the present application, the display 504 may be one and disposed on the front panel of the electronic device 500; in other embodiments of the present application, the display 504 may be at least two, and disposed on different surfaces of the electronic device 500 or in a folded design; in still other embodiments of the present application, the display 504 may be a flexible display disposed on a curved surface or a folded surface of the electronic device 500. Even more, the display 504 may be arranged in a non-rectangular irregular pattern, i.e. a shaped screen. The display 504 may be made of LCD (Liquid Crystal Display ), OLED (Organic Light-Emitting Diode) or other materials.

The camera 505 is used to capture images or video. Optionally, the camera 505 includes a front camera and a rear camera. In general, a front camera is disposed on a front panel of an electronic device, and a rear camera is disposed on a rear surface of the electronic device. In some embodiments, the at least two rear cameras are any one of a main camera, a depth camera, a wide-angle camera and a tele camera, so as to realize that the main camera and the depth camera are fused to realize a background blurring function, and the main camera and the wide-angle camera are fused to realize a panoramic shooting and Virtual Reality (VR) shooting function or other fusion shooting functions. In some embodiments of the present application, camera 505 may also include a flash. The flash lamp can be a single-color temperature flash lamp or a double-color temperature flash lamp. The dual-color temperature flash lamp refers to a combination of a warm light flash lamp and a cold light flash lamp, and can be used for light compensation under different color temperatures.

The audio circuit 506 may include a microphone and a speaker. The microphone is used for collecting sound waves of a user and the environment, and converting the sound waves into electric signals to be input to the processor 501 for processing. For purposes of stereo acquisition or descent, the microphone may be multiple, each disposed at a different location of the electronic device 500. The microphone may also be an array microphone or an omni-directional pickup microphone.

The power supply 507 is used to power the various components in the electronic device 500. The power source 507 may be alternating current, direct current, disposable or rechargeable. When the power source 507 includes a rechargeable battery, the rechargeable battery may be a wired rechargeable battery or a wireless rechargeable battery. The wired rechargeable battery is a battery charged through a wired line, and the wireless rechargeable battery is a battery charged through a wireless coil. The rechargeable battery may also be used to support fast charge technology.

The block diagrams of the electronic device in the embodiments of the present application do not constitute a limitation of the electronic device 500, and the electronic device 500 may include more or less components than illustrated, or may combine some components, or may employ different arrangements of components.

The present application also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of the method of any of the previous embodiments. The computer readable storage medium may include, among other things, any type of disk including floppy disks, optical disks, DVDs, CD-ROMs, micro-drives, and magneto-optical disks, ROM, RAM, EPROM, EEPROM, DRAM, VRAM, flash memory devices, magnetic or optical cards, nanosystems (including molecular memory ICs), or any type of media or device suitable for storing instructions and/or data.

From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on such understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the related art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform the method described in the respective embodiments or some parts of the embodiments.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.

Claims

1. A method of measuring a composition of a material to be measured, comprising:

2. The method of claim 1, wherein said comparing said reference spectrum to said simulated spectrum to obtain a comparison of said reference spectrum to said simulated spectrum comprises:

3. The method of claim 2, wherein after the obtaining the comparison of the reference spectrum and the simulated spectrum, further comprising:

4. The method according to claim 2, wherein adjusting the input value according to the comparison result, and performing a simulation operation based on the adjusted input value, comprises:

5. The method according to claim 4, wherein the adjusting the element ratio of the element species at the corresponding characteristic peak position based on the comparison result of the characteristic peak area of the simulated spectrum at the each characteristic peak position and the characteristic peak area of the reference spectrum comprises:

6. The method of claim 1, wherein said comparing said reference spectrum to said simulated spectrum to obtain a comparison of said reference spectrum to said simulated spectrum comprises:

7. The method of claim 1, wherein deriving the initial composition of the material under test based on the reference spectrum comprises:

8. An apparatus for measuring a composition of a material to be measured, comprising:

9. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the steps of the method according to any one of claims 1 to 7 when the program is executed by the processor.

10. A non-transitory computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method according to any one of claims 1 to 7.