CN117794347A - Magnetoresistive element, magnetic sensing device and manufacturing method thereof - Google Patents
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Abstract
The invention belongs to the technical field of magnetic sensing devices, and discloses a magnetic resistance element, a magnetic sensing device and a preparation method thereof. The magnetic resistance element comprises a sensing layer, a reference layer and a tunneling layer; the sensing layer has a closed vortex magnetization pattern for outputting a first signal that varies linearly in response to an external magnetic field within a preset magnetic field range; the reference layer has a closed vortex magnetization pattern for outputting a constant second signal in response to an external magnetic field within a preset magnetic field range. The output signal of the sensing layer in the magneto-resistive element of the invention is in linear response to an external magnetic field parallel to the sensing layer; the output signal of the reference layer is in constant response to the external magnetic field parallel to the sensing layer, and further the output signal of the magnetic resistance element can be in linear change to the external magnetic field parallel to the sensing layer within the range of a preset magnetic field, so that sensitive induction to the external magnetic field parallel to the sensing layer in different directions is realized. In addition, the magnetic resistance element has the beneficial effects of simple structure and easy industrialization.
Description
Technical Field
The invention relates to the technical field of magnetic sensing devices, in particular to a magnetic resistance element, a magnetic sensing device and a preparation method thereof.
Background
Magnetic field sensors have been widely used in the fields of navigation, positioning, biological detection (e.g., brain magnetic detection, heart magnetic detection), etc. According to the detection principle, the magnetic field sensor can be divided into: hall sensors, magneto-resistive sensors (anisotropic magneto-resistive sensors, giant magneto-resistive sensors, and tunneling magneto-resistive sensors), magneto-electric sensors, and the like. The tunneling magneto-resistance (Tunnel Magneto Resistance, TMR) sensor has the advantages of high sensitivity, low noise, low power consumption and the like because the magneto-resistance ratio of the tunneling magneto-resistance sensor at room temperature can reach about 200 percent.
The current commercial TMR sensor has fixed domain arrangement direction due to the fact that the reference layer is pinned by the antiferromagnetic layer, so that the sensitivity direction of the TMR sensor is the domain arrangement direction of the reference layer and is insensitive in other directions. This results in the fact that the sensor needs to know the magnetic field direction first, and then the sensor sensitivity direction and the magnetic field direction are arranged in parallel for use, so that the sensor is limited in use field.
The foregoing is provided merely for the purpose of facilitating understanding of the technical solutions of the present invention and is not intended to represent an admission that the foregoing is prior art.
Disclosure of Invention
The invention mainly aims to provide a magnetic resistance element, a magnetic sensing device and a preparation method thereof, and aims to solve the technical problem that the existing single magnetic resistance element is sensitive to a magnetic field in a specific direction.
To achieve the above object, the present invention proposes a magneto-resistive element comprising:
a sensing layer having a closed vortex magnetization pattern for outputting a first signal linearly varying in response to an external magnetic field within a preset magnetic field range;
a reference layer having a closed vortex magnetization pattern for outputting a constant second signal in response to an external magnetic field within a preset magnetic field range;
and a tunneling layer between the sensing layer and the reference layer.
According to some embodiments of the invention, the reference layer comprises a first ferromagnetic layer, a first non-magnetic layer, and a second ferromagnetic layer, disposed in sequence; the first ferromagnetic layer is proximate to the tunneling layer;
the first ferromagnetic layer and the second ferromagnetic layer have RKKY coupling;
the first ferromagnetic layer having a first closed vortex magnetization pattern; the second ferromagnetic layer having a second closed vortex magnetization pattern; the first closed vortex magnetization pattern is opposite to the spin direction of the second closed vortex magnetization pattern.
According to some embodiments of the invention, the first ferromagnetic layer, the first non-magnetic layer, and the second ferromagnetic layer are in the form of a disk or an elliptical disk;
the thicknesses of the first ferromagnetic layer and the second ferromagnetic layer are 30-nm-200 nm, the ratio of the long axis to the short axis is 1-2, and the length of the long axis is 1-20 mu m.
According to some embodiments of the invention, the first and second ferromagnetic layers are CoFeB or CoFe;
the first nonmagnetic layer is made of Ta or Ru.
According to some embodiments of the invention, the sensing layer includes a third ferromagnetic layer and a soft magnetic layer; the third ferromagnetic layer is a ferromagnetic material; the soft magnetic layer is made of soft magnetic material;
the third ferromagnetic layer and the soft magnetic layer are disc or elliptic disc, the thickness of the third ferromagnetic layer and the soft magnetic layer is 30 nm-200 nm, the ratio of the long axis to the short axis is 1-2, and the length of the long axis is 1-20 mu m.
According to some embodiments of the invention, the sensing layer further comprises a second nonmagnetic layer disposed between the third ferromagnetic layer and the soft magnetic layer.
According to some embodiments of the invention, the magneto-resistive element outputs a third signal that varies linearly in response to an external magnetic field within a preset magnetic field range; the magnetic field direction of the external magnetic field is parallel to the sensing layer.
In order to achieve the above object, the present invention also provides a method for manufacturing a magneto-resistive element.
Specifically, the preparation method of the magneto-resistive element comprises the following steps:
(1) Sequentially depositing a bottom electrode layer film, a reference layer film, a tunneling layer film, a sensing layer film and a top electrode layer film on a substrate to obtain a tunnel junction stack;
(2) Carrying out sheet flowing on the tunnel junction stack to obtain a magnetic stack after sheet flowing;
(3) And carrying out magnetic field annealing on the magnetic stack after the flow sheet to obtain the magneto-resistive element.
In order to achieve the above purpose, the invention also provides a magnetic sensing device.
Specifically, the magnetic sensing device comprises at least one magnetic resistance element, wherein the magnetic resistance element is the magnetic resistance element or the magnetic resistance element manufactured by the method.
According to some embodiments of the invention, the magnetic sensing device comprises 2 or more of the magneto-resistive elements; each of the magneto-resistive elements forms a wheatstone half-bridge structure or a wheatstone full-bridge structure.
Compared with the prior art, the invention has at least the following beneficial effects:
the magneto-resistive element comprises a sensing layer, a reference layer and a tunneling layer; the sensing layer has a closed vortex magnetization pattern for outputting a first signal that varies linearly in response to an external magnetic field within a preset magnetic field range; the reference layer has a closed vortex magnetization pattern for outputting a constant second signal in response to an external magnetic field within a preset magnetic field range. The output signal of the sensing layer in the magneto-resistive element of the invention is in linear response to an external magnetic field parallel to the sensing layer; the output signal of the reference layer is in constant response to an external magnetic field parallel to the sensing layer, and further the output signal of the magneto-resistive element is in linear change to the external magnetic field parallel to the sensing layer within the range of a preset magnetic field, so that sensitive induction to the external magnetic fields in different directions parallel to the sensing layer is realized. In addition, the magnetic resistance element has the beneficial effects of simple structure and easy industrialization.
Drawings
FIG. 1 is a schematic diagram of a first structure of a magneto-resistive element according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a second structure of a magneto-resistive element according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a reference layer in a magnetoresistive element according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a third structure of a magneto-resistive element according to an embodiment of the present invention;
FIG. 5 is a flow chart of a method for fabricating a magneto-resistive element according to an embodiment of the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Reference numerals illustrate:
10. a sensing layer; 20. a reference layer; 11. a third ferromagnetic layer; 21. a first ferromagnetic layer;
12. a soft magnetic layer; 22. a non-magnetic layer; 13 a second nonmagnetic layer; 23. a second ferromagnetic layer;
41. a first electrode layer; 30. a tunneling layer; 42. and a second electrode layer.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the technical solutions should be considered that the combination does not exist and is not within the scope of protection claimed by the present invention.
Magnetic field sensors have been widely used in the fields of navigation, positioning, biological detection (e.g., brain magnetic detection, heart magnetic detection), etc. According to the detection principle, the magnetic field sensor can be divided into: hall sensors, magneto-resistive sensors (anisotropic magneto-resistive sensors, giant magneto-resistive sensors, and tunneling magneto-resistive sensors), magneto-electric sensors, and the like. The tunneling magneto-resistance (Tunnel Magneto Resistance, TMR) sensor has the advantages of high sensitivity, low noise, low power consumption and the like because the magneto-resistance ratio of the tunneling magneto-resistance sensor at room temperature can reach about 200 percent.
The current commercial TMR sensor has fixed domain arrangement direction due to the fact that the reference layer is pinned by the antiferromagnetic layer, so that the sensitivity direction of the TMR sensor is the domain arrangement direction of the reference layer and is insensitive in other directions. This results in the fact that the sensor needs to know the magnetic field direction first, and then the sensor sensitivity direction and the magnetic field direction are arranged in parallel for use, so that the sensor is limited in use field.
The embodiment of the invention mainly aims to provide a magnetic resistance element, a magnetic sensing device and a preparation method thereof, and aims to solve the technical problem that the existing single magnetic resistance element is sensitive to a magnetic field in a specific direction.
As shown in fig. 1, the magnetoresistive element according to the embodiment of the invention includes a sensing layer 10, a reference layer 20 and a tunneling layer 30.
Specifically, the sensing layer 10 has a closed vortex magnetization pattern for outputting a first signal that varies linearly in response to an external magnetic field within a preset magnetic field range; the reference layer 20 has a closed vortex magnetization pattern for outputting a constant second signal in response to an external magnetic field within a preset magnetic field range; the tunneling layer 30 is located between the sensing layer and the reference layer.
The magneto-resistive element composed of the sensing layer 10, the reference layer 20, and the tunneling layer 30, also called a tunneling magneto-resistive element (TMR, tunnel Magneto Resistance), has advantages of high sensitivity, low power consumption, wide band, miniaturization, and the like. The CoFeB/MgO/CoFeB material system is generally adopted, and the sensor using the CoFeB material system is easy to have hysteresis due to higher remanence of the CoFeB material, generates noise in the measuring process, and causes great error in the measuring environment with higher precision.
The magneto-resistive element of the embodiment of the invention introduces a closed vortex magnetization structure in the sensing layer, so that the sensing layer can realize a perfect closed curve without hysteresis under a certain external magnetic field.
The characteristics of a structure having a closed vortex magnetization structure are described below with a sense layer as an example.
The sensing layer with the closed vortex magnetization pattern can form a sensing layer disk surface with a single vortex magnetization pattern in the process that the magnetic field of an external magnetic field gradually decreases from high to a nucleation field (the magnetic field direction of the external magnetic field is parallel to the sensing layer). The single vortex magnetization pattern has a magnetic vortex core. When the magnetic field of the external magnetic field is further reduced to zero from the nucleation field, the magnetic vortex core gradually approaches the center position of the sensing layer disk surface. When the magnetic field of the external magnetic field gradually increases from the zero reverse direction to the annihilation field, the magnetic vortex core gradually moves away from the center of the sensing layer disc surface. The single vortex magnetization pattern can be re-reproduced as the external magnetic field gradually decreases from greater than the opposite direction of the annihilation field to the nucleation field. When the external magnetic field is further gradually reduced to zero from the nucleation field, the magnetic vortex core gradually approaches the center position of the sensing layer disk surface.
The use of a closed vortex magnetization structure for the sense layer in the magnetoresistive element can help the magnetoresistive element achieve a perfectly closed curve without hysteresis over a certain external magnetic field, but since the reference layer has a pinned magnetization structure, the magnetic field direction of the external magnetic field is generally defined to be parallel to a specific direction of the sense layer. When the position of the magneto-resistive element is fixed and the direction of the external magnetic field is offset by a certain angle, the output signal of the magneto-resistive element is offset by a certain angle, and the magnitude of the external magnetic field at the position cannot be fed back accurately, namely, the magneto-resistive element cannot realize the magnetic field measurement in other magnetic field directions.
In order to solve the problem that the conventional magnetoresistive element is sensitive to only a magnetic field in a specific direction, further, the embodiment of the present invention adjusts the structure of the reference layer 20, wherein the reference layer 20 includes a first ferromagnetic layer and a second ferromagnetic layer, each of the first ferromagnetic layer and the second ferromagnetic layer has a closed vortex magnetization pattern, and the first ferromagnetic layer and the second ferromagnetic layer have opposite output signals to the same magnetic field under the antiferromagnetic coupling effect, so that the reference layer has a constant-response output signal independent of an external magnetic field in the same magnetic field.
It should be noted that, if not affected by other signals, the output signal may be zero.
The magneto-resistive element of the embodiment of the invention is used for measuring magnetic fields in different magnetic field directions parallel to the sensing layer. According to the test result, the output signal of the magneto-resistive element can output a third signal which changes linearly to an external magnetic field parallel to the different magnetic field directions of the sensing layer.
Therefore, since the output signal of the sensing layer of the magneto-resistive element of the embodiment of the invention is in linear response to the external magnetic field parallel to the different directions of the sensing layer 10, the output signal of the reference layer of the magneto-resistive element of the embodiment of the invention is in constant response to the external magnetic field parallel to the different directions of the sensing layer, and further the output signal of the magneto-resistive element of the embodiment of the invention realizes the linear change of the external magnetic field parallel to the different directions of the sensing layer, compared with the existing magneto-resistive element, the magneto-resistive element of the embodiment of the invention realizes the magnetic field induction of the external magnetic field parallel to the sensing layer within the preset magnetic field range of 0-360 degrees. The magneto-resistive element provided by the embodiment of the invention has the beneficial effects of simple structure and easiness in industrial implementation.
It should be understood that, in addition to the sensing layer, the tunneling layer and the reference layer which are sequentially arranged, the magnetoresistive element in the embodiment of the present invention further includes a first electrode layer close to the sensing layer and a second electrode layer close to the reference layer; the first electrode layer is disposed on top of or on the bottom of the sensing layer, which is not limited herein.
As shown in fig. 2, the magnetoresistive element of the embodiment of the present invention includes a first electrode layer 42, a sensing layer 10, a tunneling layer 30, a reference layer 20, and a second electrode layer 41, which are sequentially disposed;
the first electrode layer 41 and the second electrode layer 42 are disposed on two sides of the sensing layer and the reference layer, respectively. The first electrode layer 41 and the second electrode layer 42 may be made of a non-magnetic material, such as Al or Cu.
Specifically, the reference layer 20 includes a first ferromagnetic layer 21, a first nonmagnetic layer 22, and a second ferromagnetic layer 23, which are sequentially disposed; wherein the first ferromagnetic layer 21 is disposed adjacent to the tunneling layer 30;
as shown in fig. 3, in the reference layer of the embodiment of the present invention, the first ferromagnetic layer 21 located at the upper layer has a disk shape with a radius R and a thickness L, and has a first closed vortex magnetization pattern; the second ferromagnetic layer 23 positioned at the lower layer is in the shape of a disk, has a radius of R and a thickness of L, and has a second closed vortex magnetization pattern; the first non-magnetic layer 22 positioned in the middle layer is in a disc shape, has a radius R and a thickness d, and is positioned between the first ferromagnetic layer 21 and the second ferromagnetic layer 23; the first ferromagnetic layer 21 has RKKY coupling with the second ferromagnetic layer 23. Due to this RKKY coupling, there is an antiferromagnetic coupling between the first ferromagnetic layer and the second ferromagnetic layer such that the first closed vortex magnetization pattern and the second closed vortex magnetization pattern are opposite in spin direction.
To better achieve a closed vortex magnetization pattern, in an embodiment of the present invention, the first ferromagnetic layer 21, the first non-magnetic layer 22, and the second ferromagnetic layer 23 are in the form of a disk or an oval disk; the thicknesses of the first and second ferromagnetic layers 21 and 23 may be 30 nm to 200nm, the ratio of the major axis to the minor axis may be 1 to 2, and the length of the major axis may be 1 μm to 20 μm.
In the embodiment of the present invention, the materials of the first ferromagnetic layer 21 and the second ferromagnetic layer 23 are CoFeB; the material of the first nonmagnetic layer 22 is Ta or Ru.
The first ferromagnetic layer 21 and the second ferromagnetic layer 23 are both ferromagnetic materials, and the material may be other materials such as CoFe, and is not limited thereto.
In an embodiment of the present invention, the sensing layer 10 includes a third ferromagnetic layer 11 and a soft magnetic layer 12; the third ferromagnetic layer 11 is a ferromagnetic material; the soft magnetic layer 12 is a soft magnetic material;
specifically, the soft magnetic layer 12 may be one of permalloy, amorphous alloy, or microcrystalline alloy, such as CoFe, cofai; the third ferromagnetic layer 11 may be a ferromagnetic material such as CoFeB.
It should be noted that the soft magnetic layer 12 may have an accelerating effect on the formation of the closed vortex magnetization pattern of the third ferromagnetic layer 12.
Further, the third ferromagnetic layer 11 and the soft magnetic layer 12 are circular or elliptical in shape, have a thickness of 30 nm to 200nm, have a ratio of a major axis to a minor axis of 1 to 2, and have a length of 1 μm to 20 μm.
As shown in fig. 4, in some embodiments of the present invention, the sensing layer 10 further includes a second nonmagnetic layer 13, the second nonmagnetic layer 13 being disposed between the third ferromagnetic layer 11 and the soft magnetic layer 12.
Specifically, the second nonmagnetic layer 13 may be Ta or Ru.
In some embodiments of the present invention, the magnetoresistive element further includes a bias magnetic field body (not shown) located on two sides or above the stack formed by the reference layer, the tunneling layer and the sensing layer, for generating an external magnetic field to the reference layer or the sensing layer, so as to promote the reference layer or the sensing layer to form a closed vortex magnetization pattern, thereby improving the magnetic field measurement effect of the magnetoresistive element.
It should be noted that, the closed vortex magnetization pattern of the reference layer and the sensing layer in the magnetoresistive element according to the embodiment of the present invention may be realized by its own structure, for example, a disc or oval disc structure is provided, the ratio of the major axis size to the thickness size of the magnetoresistive element is controlled, or may be realized by an external structure, for example, soft magnetic material is added at the side of the magnetoresistive element far from the tunneling layer to improve the surrounding environment of the magnetoresistive element, and a bias device is added outside the stacked layer. The specific implementation is not limited here.
It should be understood that the magneto-resistive element according to the embodiment of the invention can sense the external magnetic field in any direction parallel to the plane of the sensing layer, and the placement angle of the magneto-resistive element does not need to be strictly controlled when the external magnetic field is measured, so that errors caused by discomfort of the placement angle of the magneto-resistive element can be avoided, and the difficulty of process control is reduced.
In order to achieve the above objective, the embodiment of the present invention further provides a method for manufacturing a magnetoresistive element.
As shown in fig. 5, the method for manufacturing a magneto-resistive element according to an embodiment of the present invention includes the following steps:
step S1: sequentially depositing a bottom electrode layer film, a reference layer film, a tunneling layer film, a sensing layer film and a top electrode layer film on a substrate to obtain a tunnel junction stack;
the step is a material deposition process, and each film can be realized by a magnetron sputtering deposition mode and the like. The bottom electrode layer film, the reference layer film, the tunneling layer film, the sensing layer film and the top electrode layer film have uniform thickness so as to ensure that all the layers of films are arranged in parallel.
The substrate may be selected according to practical requirements, and may be a hard substrate, such as silicon oxide, or a soft substrate, which is not limited in this embodiment.
In the embodiment of the invention, the bottom electrode layer film and the top electrode layer film are made of non-magnetic materials, such as Al or Cu; the material of the reference layer film and the sensing layer film is ferromagnetic material, such as CoFeB or CoFe; the tunneling layer film is made of insulating material such as MgO.
Step S2: carrying out sheet flowing on the tunnel junction stack to obtain a magnetic stack after sheet flowing;
this step mainly adjusts the shape of the layers in the tunnel junction stack, such as adjusting the sense layer to an elliptical or elliptical disk structure.
Step S3: and carrying out magnetic field annealing on the post-lamination magnetic stack to obtain the magneto-resistive element.
Specifically, in the embodiment of the present invention, the temperature of the magnetic field annealing is generally higher than the crystallization temperatures of the reference layer and the sensing layer, and is 280-350 degrees, such as 320 degrees; the time of the magnetic field annealing is 40 min-80. The method can be flexibly arranged according to actual requirements, and the embodiment is not limited to the method.
To achieve the above object, an embodiment of the present invention further provides a magnetic sensing device, where the magnetic sensing device includes at least one magneto-resistive element, and the magneto-resistive element is any one of the magneto-resistive elements described above, or is manufactured by any one of the methods described above.
Specifically, the magnetic sensing device in the embodiment of the invention can be applied to at least one of current sensing, speed sensing, direction sensing, rotation angle sensing or proximity sensing.
The application field and the range of the magnetic sensor device are not limited to the above, and are not particularly limited here.
In some embodiments of the invention, the magnetic sensing device comprises 2 or more magneto-resistive elements; each magnetoresistive element forms a wheatstone half-bridge structure or a wheatstone full-bridge structure.
The magneto-resistive sensing device inherits all advantages of the magneto-resistive element, so that the magneto-resistive sensing device has at least all advantages brought by the technical scheme of the above embodiment, and will not be described in detail herein.
It should be understood that the foregoing is illustrative only and is not limiting, and that in specific applications, those skilled in the art may set the invention as desired, and the invention is not limited thereto.
Claims (10)
1. A magnetoresistive element, characterized by comprising:
a sensing layer having a closed vortex magnetization pattern for outputting a first signal linearly varying in response to an external magnetic field within a preset magnetic field range;
a reference layer having a closed vortex magnetization pattern for outputting a constant second signal in response to the external magnetic field within a preset magnetic field range;
and a tunneling layer between the sensing layer and the reference layer.
2. A magnetoresistive element according to claim 1, characterized in that,
the reference layer comprises a first ferromagnetic layer, a first nonmagnetic layer and a second ferromagnetic layer which are sequentially arranged; the first ferromagnetic layer and the second ferromagnetic layer have RKKY coupling;
the first ferromagnetic layer having a first closed vortex magnetization pattern; the second ferromagnetic layer having a second closed vortex magnetization pattern; the first closed vortex magnetization pattern is opposite to the spin direction of the second closed vortex magnetization pattern.
3. A magnetoresistive element according to claim 2, characterized in that,
the first ferromagnetic layer, the first nonmagnetic layer and the second ferromagnetic layer are disk or elliptical disks;
the thicknesses of the first ferromagnetic layer and the second ferromagnetic layer are 30-nm-200 nm, the ratio of the long axis to the short axis is 1-2, and the length of the long axis is 1-20 mu m.
4. A magnetoresistive element according to claim 2 or 3,
the first ferromagnetic layer and the second ferromagnetic layer are made of CoFeB or CoFe;
the first nonmagnetic layer is made of Ta or Ru.
5. A magnetoresistive element according to claim 1, characterized in that,
the sensing layer includes a third ferromagnetic layer and a soft magnetic layer; the third ferromagnetic layer is a ferromagnetic material; the soft magnetic layer is made of soft magnetic material;
the third ferromagnetic layer and the soft magnetic layer are disc or elliptic disc, the thickness of the third ferromagnetic layer and the soft magnetic layer is 30 nm-200 nm, the ratio of the long axis to the short axis is 1-2, and the length of the long axis is 1-20 mu m.
6. A magnetoresistive element according to claim 5, characterized in that,
the sense layer also includes a second nonmagnetic layer disposed between the third ferromagnetic layer and the soft magnetic layer.
7. A magnetoresistive element according to any of claims 1 to 6,
the magneto-resistive element outputs a third signal that varies linearly in response to an external magnetic field within a preset magnetic field range; the magnetic field direction of the external magnetic field is parallel to the sensing layer.
8. A method for manufacturing a magnetoresistive element, comprising the steps of:
sequentially depositing a bottom electrode layer film, a reference layer film, a tunneling layer film, a sensing layer film and a top electrode layer film on a substrate to obtain a tunnel junction stack;
carrying out sheet flowing on the tunnel junction stack to obtain a magnetic stack after sheet flowing;
subjecting the post-fluidic stack to magnetic field annealing to obtain the magnetoresistive element according to any of claims 1-7.
9. A magnetic sensing device comprising at least one magneto-resistive element according to any one of claims 1 to 7 or obtainable by the method of claim 8.
10. The magnetic sensing device of claim 9, wherein the magnetic sensing device comprises 2 or more of the magneto-resistive elements; each of the magneto-resistive elements forms a wheatstone half-bridge structure or a wheatstone full-bridge structure.
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