CN1177377C - Surface assembled luminescent diode and its manufacture method - Google Patents
Surface assembled luminescent diode and its manufacture methodInfo
- Publication number
- CN1177377C CN1177377C CNB001264648A CN00126464A CN1177377C CN 1177377 C CN1177377 C CN 1177377C CN B001264648 A CNB001264648 A CN B001264648A CN 00126464 A CN00126464 A CN 00126464A CN 1177377 C CN1177377 C CN 1177377C
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- Prior art keywords
- resinite
- epoxy resin
- mentioned
- glass epoxy
- reflection box
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2924/181—Encapsulation
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Abstract
The present invention relates to a surface assembled light emitting diode. Reflection frames are arranged on the periphery of a light emitting diode device assembled on a glass epoxy resin baseplate. First resin bodies mixed with wavelength transforming materials are filled in the reflection frames and the light emitting diode device is sealed. Simultaneously, second resin bodies and third resin bodies as surface layers are overlapped and layered on the upper part of the glass epoxy resin baseplate containing the reflection frames to seal the whole body. Ultraviolet absorbers are at least mixed into the third resin bodies. The wavelength transforming materials such as fluorescent substances, etc., are used for suppressing the ageing of the wavelength transforming materials because the wavelength transforming materials are not sensitive to the influences of the external ultraviolet, etc.
Description
Technical field
The invention relates to a kind of can surface-mounted surface assembled luminescent diode and manufacture method thereof on motherboard, particularly, change the light-emitting diode of glow color type about wavelength by the conversion LED device.
Background technology
In the past, as the light-emitting diode of this wavelength conversion type, for example, light-emitting diode shown in Figure 1 was well-known (spy opens flat 9-99345 number).It is the light-emitting diode 1 of lead frame type, on the metal column 2 of framework one side, recess 3 is set exactly, and in this recess 3, load onto and fixing LED device 4, the opposite side metal base 5 that connects this LED device 4 and framework simultaneously with bonding wire 6, fill in the above-mentioned recess 3 and to have sneaked into the resin material 7 of wavelength conversion, and then seal all structures with the transparent epoxy resin 8 of shell shape with fluorescent material etc.At the light-emitting diode 1 that constitutes with this structure, because of the emission wavelength of LED device 4, carry out wavelength conversion, so can shine with the different glow color of LED device 4 original glow colors with the resin material 7 that is filled in the recess 3.
But, 7 li of above-mentioned resin materials have been sneaked into wavelength conversion with fluorescent material etc., because outside next ultraviolet ray etc. has easily aging character, so only with the above-mentioned all like this light-emitting diodes 1 of transparent epoxy resin 8 sealings, be subject to the problem of external ultraviolet influence with regard to there being above-mentioned fluorescent material.
Summary of the invention
The 1st purpose of the present invention is, the structure of light-emitting diode is made surface assembling type, and the wavelength conversion that makes above-mentioned fluorescent material etc. with material by being difficult to be subjected to the influence of external ultraviolet ray etc., to suppress wavelength conversion aging with material.
The 2nd purpose of the present invention is to make the structure that is difficult to be subjected to influences such as ultraviolet ray, does not become to descend with the light-emitting diode briliancy on reason.
In order to address the above problem, surface assembled luminescent diode of the present invention, be included in the top configuration LED device of glass epoxy resin substrate, and connect the electrode of this LED device respectively and be formed at after the pair of electrodes on the glass epoxy resin substrate, top with resinite seal glass epoxy resin base plate, it is characterized in that above-mentioned LED device around dispose reflection box, be filled with in this reflection box and sneak into 1st resinite and the sealed light emitting diode device of wavelength conversion with material, simultaneously on the top of the glass epoxy resin substrate that contains reflection box, stratiform is overlapping to be mixed with the 2nd resinite of diffusion wavelength conversion diffusion of light agent and to be mixed with ultra-violet absorber and seal all as the 3rd resinite of superficial layer.
And the surface assembled luminescent diode of another scheme of the present invention is characterized in that the position of the 1st resinite upper surface of above-mentioned filling is lower than the top edge of reflection box.
The surface assembled luminescent diode of another scheme of the present invention is characterized in that sneaking into the fluorescent material that the wavelength conversion material is made up of fluorescent dye or fluorescent pigment in above-mentioned the 1st resinite.
The surface assembled luminescent diode of another scheme of the present invention is characterized in that the diffusion agent that is mixed with in above-mentioned the 2nd resinite is aluminium oxide or silicon dioxide.
The surface assembled luminescent diode of another scheme of the present invention is characterized in that above-mentioned the 3rd resinite all of above-mentioned the 2nd resinite that be covered, and peripheral part is the hat above the glass epoxy resin substrate of being adhesively fixed.
The surface assembled luminescent diode of another scheme of the present invention is characterized in that the top formation condenser portion of above-mentioned the 3rd resinite.
The surface assembled luminescent diode of another scheme of the present invention is characterized in that above-mentioned light-emitting diode sends out the coloured light device blue by what gallium nitride compound semiconductor or carborundum based compound semiconductor were formed.
And then the manufacture method of surface assembled luminescent diode of the present invention is characterized in that possessing: the step of the reflection box assembly that is adhesively fixed on the glass epoxy resin assembled substrate that forms pair of electrodes; Dispose LED device respectively in reflection box inside, and the electrode of this LED device be formed at the step that the pair of electrodes on the glass epoxy resin substrate couples together respectively; In above-mentioned reflection box, fill and sneak into wavelength conversion the 1st resinite of material and the step of sealed light emitting diode device; Seal the step on the top of the glass epoxy resin substrate that contains reflection box with the 2nd resinite of sneaking into diffusion agent; Seal step above above-mentioned the 2nd resinite with the 3rd resinite of sneaking into ultra-violet absorber; And, cut into the size that each constitutes light emitting diode base plate respectively along the cut-out line that is set on the glass epoxy resin assembled substrate, be divided into the step of light-emitting diode one by one.
If make such structure, because the top layer part of resin sealing body is sneaked into ultra-violet absorber, thereby near the wavelength conversion LED device is difficult to accept the influence of external ultraviolet ray etc. with material, just can suppress wavelength conversion wearing out with material.
And, because only sneak into ultra-violet absorber, so just there is not the significantly reduced situation of light-emitting diode briliancy on its reason in the top layer of resin sealing body part.
Because the position of the 1st resinite upper surface of filling in the reflection box, be in lower than the last ora terminalis position of this reflection box, even during near a plurality of surface assembled luminescent diode of configuration, also can with ora terminalis blocking the opposing party light-emitting diode on the reflection box of side's light-emitting diode come luminous, the problem of mixing with regard to the glow color that does not have two side's light-emitting diodes.
By diffusion agent is sneaked in the 2nd resinite, make the light diffusion of wavelength conversion and obtain to have inhomogeneity glow color.
Because to make the 3rd resinite of hat, cover all the 2nd resinites, so be positioned at inner wavelength conversion just further is difficult to be subjected to external ultraviolet ray etc. with material influence.
Owing to formed condenser portion above the 3rd resinite, to obtain high briliancy luminous so the light that LED device is come is assembled by condenser portion.
If adopt manufacture method of the present invention, because can make a plurality of surface assembled luminescent diodes simultaneously on the glass epoxy resin assembled substrate, so can reduce cost significantly, economic effect is big.And then condenser portion is except that forming with sealing resin is whole, and it is first-class also to be installed to motherboard automatically, also can reach to reduce number of steps, improve rate of finished products, and further improve reliability etc.
With reference to the accompanying drawings, further specify above-mentioned this features and advantages of the present invention.
Description of drawings
Fig. 1 is the profile of existing wavelength conversion type light-emitting diode one example.
Fig. 2 shows the stereogram of the 1st embodiment of surface assembled luminescent diode of the present invention.
Fig. 3 is along the A-A line profile of above-mentioned Fig. 2 when being assembled to above-mentioned surface assembled luminescent diode on the motherboard.
Fig. 4 is presented at the stereogram of the electrode pattern formation step when the above-mentioned surface assembled luminescent diode of manufacturing on the assembled substrate.
Fig. 5 is presented at the stereogram of settling reflection box assembly step on the combinations thereof substrate.
Fig. 6 shows on the combinations thereof substrate LED device is installed, and carries out the step profile of bonding wire.
Fig. 7 shows the step profile with the LED device on the 1st resinite sealing combinations thereof substrate.
Fig. 8 shows the step profile with the 2nd resinite sealing combinations thereof substrate top.
Fig. 9 shows the step profile that seals above-mentioned the 2nd resinite top with the 3rd resinite.
Figure 10 is the cross sectional illustration figure of cutting apart combinations thereof substrate occasion along the cut-out line of X, Y direction.
Figure 11 shows the stereogram of the 2nd embodiment of surface assembled luminescent diode of the present invention.
Figure 12 is along the profile of the B-B line of above-mentioned Figure 11 when being assembled to above-mentioned surface assembled luminescent diode on the motherboard.
Figure 13 is presented at electrode pattern step when the above-mentioned surface assembled luminescent diode of manufacturing and the stereogram of settling reflection box assembly step on the assembled substrate.
Figure 14 shows the step profile with the 2nd resinite sealing combinations thereof substrate top.
Figure 15 shows the step profile that seals above-mentioned the 2nd resinite top with the 3rd resinite.
Figure 16 cuts off the cross sectional illustration figure that line is cut apart the assembled substrate occasion of the 2nd embodiment along directions X.
Figure 17 shows the 3rd embodiment stereogram of surface assembled luminescent diode of the present invention.
Figure 18 is along the profile of the C-C line of Figure 17 when being assembled to above-mentioned surface assembled luminescent diode on the motherboard.
Figure 19 is the profile along the D-D line of above-mentioned Figure 17.
Figure 20 is the profile when covering on the 2nd resin sealing body with the 3rd resin sealing body that other step is made.
Figure 21 is presented at the step stereogram that seals above-mentioned the 2nd resin sealing body when the assembled substrate manufacturing with the 3rd resin sealing body.
Figure 22 is the profile along the E-E line among above-mentioned Figure 21.
Figure 23 is the cross sectional illustration figure of cutting apart the assembled substrate occasion of the 3rd embodiment along the cut-out line of X, Y direction.
Embodiment
Below, according to accompanying drawing, describe the embodiment of surface assembled luminescent diode of the present invention and manufacture method thereof in detail.Fig. 2 and 3 shows the figure of the 1st embodiment of surface assembled luminescent diode 11 of the present invention.The surface assembled luminescent diode 11 of present embodiment, be on rectangle glass epoxy resin substrate 12, to form pair of electrodes (for example cathode electrode 13 and anode electrode 14) figure, and after assembling LED device 15 on the cathode electrode 13, seal the structure on its top with resinite.Through hole electrode 16a, the 16b of these electrodes 13,14 by being located at glass epoxy resin substrate 12 both ends be around going into the inside one side, as shown in Figure 3, and this inside electrode 17a, 17b and be located at printed wiring 19a, 19b conducting on the motherboard 18.Also have, through hole electrode 16a, post Masking strip 34 above the 16b.
Be configured in LED device 15 in the above-mentioned reflection box 21 and slightly be the small cap of cube shaped, upper and lower surface respectively has electrode.And lower electrodes is adhesively fixed with conductive adhesive 22 on the cathode electrode 13 in reflection box 21, and on the other hand, overlying electrode then is connected to anode electrode 14 with bonding wire 23.With regard to the LED device 15 of present embodiment,, also can use a blue streak device of gallium nitride compound semiconductor though be a blue streak device that constitutes by the carborundum based compound semiconductor.But, owing to do not have electrode below the luminescent device, so need couple together P electrode and N electrode with cathode electrode 13 and anode electrode 14 respectively with bonding wire 23.
In the present embodiment, the 1st resinite 25 that is used to seal above-mentioned LED device 15 is filled in the above-mentioned reflection box 21.Among the 1st resinite 25, be mixed with wavelength of visible light conversion material, for example can be transformed to the material that emits white light sending out blue streak with blue streak excitation-emission long wavelength.With regard to this wavelength conversion is used material, the fluorescent material that can form with fluorescent dye or fluorescent pigment, as fluorescent dye, organic fluorescents such as for example available fluoflavin (fluorescein), rhodamine, and as fluorescent pigment, inorganic phosphors such as available artificial schellite.In addition, improve the mixed volume that changes these fluorescent materials, can also adjust the wavelength region may of conversion.And, in the present embodiment, also as shown in Figures 2 and 3, fill the loading of the 1st resinite 25 like this, the position that makes its upper surface is lower than the last ora terminalis 26 of reflection box 21 to be desirable.Like this, though with a plurality of surface assembled luminescent diodes 11 near being configured since can with last ora terminalis 26 blockings of a light-emitting diode from another light-emitting diode come luminous, so can prevent the glow color mixing of two light-emitting diodes.In addition, with regard to the resin material of sneaking into these fluorescent materials, generally use the transparent resin of epoxy resin.
Glass epoxy resin substrate 12 tops that comprise above-mentioned reflection box 21 are with 27 sealings of the 2nd resinite.The 2nd resinite 27 also is that transparent resin with epoxy resin is as principal component, by having thickness to a certain degree and constituting with glass epoxy resin substrate 12 same level shapes.This 2nd resinite 27 is the resins that in the same old way see through with the glow color behind above-mentioned the 1st resinite 25 wavelength conversions, can use the transparent resin of epoxy resin separately, yet wherein sneak into aluminium oxide, the agent of silica isodiffusion by making, just can obtain to have the more glow color of homogeneity.
And then, in the present embodiment, on the top of above-mentioned the 2nd resinite 27, overlapping the 3rd resinite 28 of stratiform.Sneak into ultra-violet absorbers such as salicylic acid dielectric, 2-oxybenzene ketone dielectric in this 3rd resinite 28, the ultraviolet ray of interdicting ambient light here reduces the influence of ultraviolet ray to the 1st resinite 25, suppresses to sneak into the aging of fluorescent material.Though the 3rd resinite 28 has been made and the same flat shape of above-mentioned the 2nd resinite 27, its thickness is thinner than the 2nd resinite 27.Because the purpose of the 3rd resinite 28 is to prevent if it interdicts ultraviolet words effectively, even very thin also enough, will reduce glorious degrees as if blocked up in addition because of above-mentioned ultraviolet ray causes that fluorescent material is aging.
In the present embodiment, in the whole outstanding hemispherical condenser portion 29 that formed of the upper central of above-mentioned the 3rd resinite 28 part.This condenser portion 29 is positioned at the top of reflection box 21, and have the inner peripheral surface of reflection box 21 towards above direction, assemble the convex lens effect of the light of reflection LED device 15.Promptly, the light that sends by LED device 15, be divided into the light that in the same old way directly advances upward and upward light after reflection on the inner peripheral surface of reflection box 21, be which light is also all by the 1st resinite 25 conversion wavelength, make the even back of glow color at condenser portion 29 optically focused at the 2nd resinite 27 again, thereby should obtain the white luminous of high briliancy.The radius of curvature of this condenser portion 29, shape and refractive index are not particularly limited in the scope that obtains optically focused.In addition, the situation that condenser portion 29 is not set is also arranged on the 3rd resinite 28.
As shown in Figure 3, by the surface assembled luminescent diode 11 that said structure is formed, can directly be assembled to motherboard 18 above.Promptly, seating surface assembled luminescent diode 11 up on formed printed wiring 19a, the 19b on motherboard 18, and the inside electrode 17a, 17b by glass for bonding epoxy resin base plate 12 left and right sides, just finished the light-emitting diode assembling that suppresses height dimension.Like this, be assemblied in after surface assembled luminescent diode 11 on the motherboard 18 sends, not only be transformed into the phototropic that emits white light, but also have directive property upward from sending out a blue streak.
Fig. 4 shows the manufacture method of the surface assembled luminescent diode of being made up of said structure 11 to Figure 10.This manufacture method is the method when making a plurality of light-emitting diode simultaneously with assembled substrate.Fig. 4 shows on glass epoxy resin assembled substrate 31 and forms, on each above-mentioned glass epoxy resin substrate 12, constitute cathode electrode and the electrode pattern 32 of anode electrode and the circular hole through-hole section 33 of through hole electrode, and then up to the step with Masking strip 34 inaccessible circular hole through-hole section 33.
Fig. 5 shows location reflection box assembly 35 on glass epoxy resin assembled substrate 31, reflection box 21 is installed to the step that is adhesively fixed on the assigned position of electrode pattern 32.
In next step, as shown in Figure 6, LED device 15 is installed in each reflection box 21 of above-mentioned glass epoxy resin assembled substrate 31, make with conductive adhesive 22 to be attached on the contre electrode part 20 below it.Send into curing oven fixedly after the LED device 15, connect the overlying electrode of LED device 15 and the anode electrode 14 of glass epoxy resin substrate 12 with bonding wire 23.
Fig. 7 shows the sealing step of the 1st resinite 25.In this sealing step, the 1st resinite 25 having sneaked into fluorescent material flows into respectively in each reflection box 21, is filled into the position above the disappearance LED device 15 always.In addition, when filling, be noted that do not allow the 1st resinite 25 above arrive at the last ora terminalis 26 of reflection box 21.Send into curing oven after the filling and make the 1st resinite 25 thermmohardenings.
Fig. 8 shows the sealing step of the 2nd resinite 27.In this sealing step, metal pattern 36 is set around on glass epoxy resin assembled substrate 31, and to this metal pattern 36 in, flows into the 2nd resinite 27, above while seal glass epoxy resin assembled substrate 31 whole.Circular hole through-hole section 33 is used Masking strip 34 obturations above it, thereby does not have 27 inflows of the 2nd resinite wherein.In this state, glass epoxy resin assembled substrate 31 is sent in the curing oven, made the 2nd resinite 27 thermmohardenings.
Fig. 9 shows the sealing step of the 3rd resinite 28, in this sealing step, prepares to be formed for the other metal pattern 37 of the hemispheric recess 38 of one-body molded condenser portion 29, allows the 3rd resinite 28 fill wherein.And upside-down mounting glass epoxy resin assembled substrate 31 makes it to face down from it, making under the 3rd resinite 28 and the 2nd resinite 27 state of contact, glass epoxy resin assembled substrate 31 is sent in the curing oven, with the 3rd resinite 28 thermmohardenings.
Step after Figure 10 shows and takes out from curing oven is carried out clathrate scribing and section along 39,40 pairs on the cut-out line of X, Y direction with the 2nd resinite 27 and the 3rd resinite 28 sealed glass epoxy resin assembled substrates 31.As Fig. 4 and shown in Figure 10, the cut-out line 39 of directions X is along the line on electrode pattern 32 length directions, and the Y direction is cut off line 40 for being formed at the line on the circular hole through-hole section 33.Like this, the surface assembled luminescent diode one by one 11 after cutting apart is transplanted on the motherboard 18 with automatic mounting machine (scheming not shown) vacuum suction.
Figure 11 and Figure 12 show the 2nd embodiment of surface assembled luminescent diode 11 of the present invention.The surface assembled luminescent diode 11 of present embodiment is different with the embodiment of front, on the whole width in side, be provided with the side electrode 41a, the 41b that constitute cathode electrode 13 and anode electrode 14 in the side of glass epoxy resin substrate 12, and extend to backplate 42a, 42b in the same old way.And, having exposed above the glass epoxy resin substrate 12 under the state of a both sides part, the 2nd resinite 27 and the 3rd resinite 28 are set thereupon.Also have, other each side is by forming with the same structure of the surface assembled luminescent diode of front embodiment, and has same action effect, thereby gives same label, describes then omission in detail.
Figure 13 shows the manufacture method of the surface assembled luminescent diode 11 of the 2nd embodiment to Figure 16.At this moment manufacture method is also same with the occasion of the embodiment of front basically, as shown in figure 13, forms electrode pattern 32 equally on glass epoxy resin assembled substrate 31, but different with front embodiment and form slotted hole through hole 43.At this moment just do not need Masking strip.And, on glass epoxy resin assembled substrate 31, located after the reflection box assembly 35, each reflection box 21 is adhesively fixed on electrode pattern 32.
Load onto LED device 15 in the reflection box 21 and carry out the bonding wire step and the step of sealing the 1st resinite 25, since same with Fig. 6 and the 1st embodiment shown in Figure 7, so omit explanation.
Figure 14 shows metal pattern 44 is set on glass epoxy resin assembled substrate 31, and the step of the 2nd resinite 27 is filled by portion within it, but the shape of this metal pattern 44 is different with the embodiment of front.That is, this metal pattern 44 not only surrounds the periphery of glass epoxy resin assembled substrate 31, and the position that corresponds respectively to slotted hole through hole 43 has metal shadowing portion 45, with this above metal shadowing portion 45 inaccessible slotted hole through holes 43.The horizontal wide width than slotted hole through hole 43 of metal shadowing portion 45 is big, and therefore, when filling the 2nd resinite 27, the 2nd resinite 27 can not flow in the slotted hole through hole 43, forms the 2nd resinite 27 in the position of distance slotted hole through hole 43 a little distance of edge exactly simultaneously.
Figure 15 shows the sealing step of the 3rd resinite 28, same with the embodiment of front, for the recess 38 of integrally formed condenser portion 29 uses formed metal pattern 46, and it is same with the metal pattern 44 of front, on this metal pattern 46, also form metal shadowing portion 47, but prevent that the 3rd resinite 28 from flowing to slotted hole through hole 43 this point differences in order to inaccessible slotted hole through hole 43.
Figure 16 shows the cut-out step of glass epoxy resin assembled substrate 31, but different with the embodiment of front, along just scribing and the section and can be divided into surface assembled luminescent diode 11 one by one of the cut-out line 39 of directions X.That is, the Y direction is a slotted hole through hole 43, and having cut apart does not from the beginning just need to cut off.
Figure 17 and Figure 18 show the 3rd embodiment of surface assembled luminescent diode 11 of the present invention.The surface assembled luminescent diode 11 of present embodiment in above-mentioned the 2nd embodiment, has become the structure with all the 2nd resinites 27 of the 3rd resinite 28 linings.Just, having exposed above the glass epoxy resin substrate 12 under the state of peripheral part 12a, form the 2nd resinite 27.On the other hand, the 3rd resinite 28 as shown in figure 20, forms with other step, makes the top 27a that is covered in above-mentioned the 2nd resinite 27 and the recess 30 formed cap shapes of peripheral side 27b.On the upper wall surface 30a and side wall surface 30b of this recess 30, form space, when covering on the 2nd resinite 27, be close to its outer surface with the 2nd resinite 27 shape correspondences.And whole continuous coating adhesive 24 all around when covering on the 2nd resinite 27, follows the top peripheral part 12a of glass epoxy resin substrate 12 to be adhesively fixed on the lower wall surface 30c of the 3rd resinite 28.In addition, other each point is by constituting with the same structure of the surface assembled luminescent diode of front embodiment, and has same action effect, describes in detail then and omits so give same label.
Figure 21 shows the manufacture method of the surface assembled luminescent diode 11 of above-mentioned the 3rd embodiment to Figure 23, in addition, this manufacture method is all same with above-mentioned the 2nd embodiment before the sealing step of the 2nd resinite 27, therefore saves detailed description, and talks about from the sealing step of the 3rd resinite 28.
Figure 21 and Figure 22 show the state that takes out behind the metal pattern 44 (with reference to Figure 14) be used to form the 2nd resinite 27, and on glass epoxy resin assembled substrate 31, form space 39 between the 2nd adjacent resinite 27.Therefore, the top peripheral part 12a of each glass epoxy resin substrate 12 exposes.On the other hand, available other step forms the 3rd resinite 28, as assembly 40, it is covered above the glass epoxy resin assembled substrate 31.Each recess 30 that cuts off line 40 is embedded among the 2nd resinite 27, be situated between with the adhesive 24 of coating assembly 40 lower wall surface 30c in advance and bonding with top peripheral part.Then, it is sent into curing oven cure adhesive 24.
Figure 23 shows the LED device 15 that installs on the glass epoxy resin assembled substrate 31, the state that seals with the three-layer structure of the 1st resinite the 25, the 2nd resinite 27 and the 3rd resinite 28.As Figure 21 and shown in Figure 23, along the cut-out line 41,42 of supposing X, Y direction on the substrate, such glass epoxy resin assembled substrate 31 is carried out latticed scribing and section in advance, and be divided into each the such surface assembled luminescent diode 11 that is shown in Figure 17.Surface assembled luminescent diode one by one 11 after will cutting apart is transplanted on the motherboard 18 with automatic mounting machine (scheming not shown) vacuum suction.
In addition, above-mentioned whichever embodiment also illustrates with the method that adopts bonding wire 23 to connect, but the present invention is not limited to this, for example also comprises the method for attachment with the flip-chip assembling of scolder boss etc.
Claims (8)
1. surface assembled luminescent diode, be included in the top configuration LED device of glass epoxy resin substrate, and connect the electrode of this LED device respectively and be formed at after the pair of electrodes on the glass epoxy resin substrate, top with resinite seal glass epoxy resin base plate is characterized in that
Dispose reflection box around the above-mentioned LED device, be filled with in this reflection box and sneak into 1st resinite and the sealed light emitting diode device of wavelength conversion with material, simultaneously on the top of the glass epoxy resin substrate that contains reflection box, stratiform is overlapping to be mixed with the 2nd resinite of diffusion wavelength conversion diffusion of light agent and to be mixed with ultra-violet absorber and seal all as the 3rd resinite of superficial layer.
2. according to the described surface assembled luminescent diode of claim 1, it is characterized in that the position of upper surface of the 1st resinite of above-mentioned filling is lower than the top edge of reflection box.
3. according to the described surface assembled luminescent diode of claim 1, it is characterized in that sneaking into the fluorescent material that the wavelength conversion material is made up of fluorescent dye or fluorescent pigment in above-mentioned the 1st resinite.
4. according to the described surface assembled luminescent diode of claim 1, it is characterized in that the diffusion agent that is mixed with in above-mentioned the 2nd resinite is aluminium oxide or silicon dioxide.
5. according to the described surface assembled luminescent diode of claim 1, it is characterized in that above-mentioned the 3rd resinite all of above-mentioned the 2nd resinite that be covered, and peripheral part is the hat above the glass epoxy resin substrate of being adhesively fixed.
6. according to claim 1 or 5 described surface assembled luminescent diodes, it is characterized in that the top formation condenser part of above-mentioned the 3rd resinite.
7. according to the described surface assembled luminescent diode of claim 1, it is characterized in that the blue streak element that above-mentioned light-emitting diode is made up of gallium nitride compound semiconductor or carborundum based compound semiconductor.
8. the manufacture method of a surface assembled luminescent diode is characterized in that comprising: the step of the reflection box assembly that is adhesively fixed on the glass epoxy resin assembled substrate that forms pair of electrodes; Dispose LED device respectively in reflection box inside, and the electrode of this LED device be formed at the step that the pair of electrodes on the glass epoxy resin substrate couples together respectively; In above-mentioned reflection box, fill and sneak into wavelength conversion the 1st resinite of material and the step of sealed light emitting diode device; Seal the step on the top of the glass epoxy resin substrate that contains reflection box with the 2nd resinite of sneaking into diffusion agent; Seal the top step of above-mentioned the 2nd resinite with the 3rd resinite of sneaking into ultra-violet absorber; And, cut into the size that each constitutes light emitting diode base plate respectively, and be divided into the step of light-emitting diode one by one along the cut-out line that is set on the glass epoxy resin assembled substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001264648A CN1177377C (en) | 2000-09-01 | 2000-09-01 | Surface assembled luminescent diode and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001264648A CN1177377C (en) | 2000-09-01 | 2000-09-01 | Surface assembled luminescent diode and its manufacture method |
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| CN1340864A CN1340864A (en) | 2002-03-20 |
| CN1177377C true CN1177377C (en) | 2004-11-24 |
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| CNB001264648A Expired - Fee Related CN1177377C (en) | 2000-09-01 | 2000-09-01 | Surface assembled luminescent diode and its manufacture method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885577B (en) * | 2005-06-25 | 2010-05-12 | 财团法人工业技术研究院 | Packaging assembly of SMD light emitting diodes and manufacturing method thereof |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100566140B1 (en) * | 2003-05-14 | 2006-03-30 | (주)나노팩 | Light emitting diode and package structure and method of manufacturing thereof |
| JP4258367B2 (en) | 2003-12-18 | 2009-04-30 | 株式会社日立製作所 | Optical component mounting package and manufacturing method thereof |
| DE102006035635A1 (en) | 2006-07-31 | 2008-02-07 | Osram Opto Semiconductors Gmbh | lighting arrangement |
| CN101572284B (en) * | 2008-04-29 | 2011-02-16 | 北京宇极科技发展有限公司 | Semiconductor light-emitting device |
| CN102024804B (en) * | 2009-09-11 | 2012-05-23 | 柏友照明科技股份有限公司 | Mixed light type light emitting diode packaging structure capable of increasing color rendering and brightness |
| CN102157509B (en) * | 2010-02-12 | 2012-11-28 | 柏友照明科技股份有限公司 | Light mixing type light-emitting diode encapsulation structure capable of improving color rendering |
| US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
| CN103165763B (en) * | 2011-12-14 | 2015-07-08 | 赛恩倍吉科技顾问（深圳）有限公司 | Manufacture method of light emitting diode (LED) |
| CN104300075B (en) * | 2013-07-18 | 2017-03-22 | 深圳市斯迈得半导体有限公司 | White-light LED light source device and manufacturing method |
| CN105448904B (en) * | 2014-09-02 | 2019-02-19 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and its manufacturing method |
| US10763414B2 (en) | 2017-12-18 | 2020-09-01 | Rohm Co., Ltd. | Semiconductor light-emitting device |
-
2000
- 2000-09-01 CN CNB001264648A patent/CN1177377C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885577B (en) * | 2005-06-25 | 2010-05-12 | 财团法人工业技术研究院 | Packaging assembly of SMD light emitting diodes and manufacturing method thereof |
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| Publication number | Publication date |
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| CN1340864A (en) | 2002-03-20 |
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