CN117608161A - Method for cleaning photomask - Google Patents
Method for cleaning photomask Download PDFInfo
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- CN117608161A CN117608161A CN202410042215.3A CN202410042215A CN117608161A CN 117608161 A CN117608161 A CN 117608161A CN 202410042215 A CN202410042215 A CN 202410042215A CN 117608161 A CN117608161 A CN 117608161A
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- cleaning process
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- 238000004140 cleaning Methods 0.000 title claims abstract description 277
- 238000000034 method Methods 0.000 title claims abstract description 220
- 239000000243 solution Substances 0.000 claims abstract description 103
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000012670 alkaline solution Substances 0.000 claims abstract description 42
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000001257 hydrogen Substances 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims description 161
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 78
- 239000012530 fluid Substances 0.000 claims description 65
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 35
- 238000002156 mixing Methods 0.000 claims description 17
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 238000000354 decomposition reaction Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000010954 inorganic particle Substances 0.000 abstract description 71
- 230000000694 effects Effects 0.000 abstract description 19
- 230000006378 damage Effects 0.000 description 18
- 239000007788 liquid Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 150000002500 ions Chemical group 0.000 description 10
- 238000011010 flushing procedure Methods 0.000 description 9
- -1 tetramethyl amino hydroxide Chemical compound 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The application relates to a method for cleaning a photomask, which comprises the following steps: the photomask is first cleaned using a first solution comprising hydrogen gas water and an alkaline solution. The PH value of the first solution can be improved by utilizing the hydrogen water by enabling the first solution to comprise the hydrogen water and the alkaline solution, and when the alkaline solution is used for cleaning inorganic particles on the surface of the photomask, the PH of the first solution is improved by utilizing the hydrogen water, so that the electrochemical effect is increased, repulsive force between the surface of the photomask and the inorganic particles is increased, the inorganic particles are facilitated to stay in the first solution, the probability of reprecipitating and adhering the inorganic particles to the surface of the photomask is reduced, and the removal rate of the inorganic particles is improved, and the yield and the utilization rate of the photomask are improved.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a method for cleaning a photomask.
Background
With the rapid development of very large scale integrated circuits (Ultra Large Scale Integration, ULSI), integrated circuit fabrication processes are becoming more complex and sophisticated.
With the continuous improvement of integrated circuit processing nodes, high-end masks such as ARF (Argon Fluoride) Phase Shift Mask (PSM) and bipolar masks are increasingly used. In the traditional mask cleaning process, a mode of strong oxidation chemical reagent and strong physical force cleaning is mainly adopted, and although some chemical organic matters can be effectively removed, the problems of serious pattern damage, more inorganic impurity residues and the like can be generated, so that the mask yield is reduced.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method for cleaning a photomask.
In a first aspect, the present application provides a method for cleaning a photomask, including:
the photomask is first cleaned using a first solution comprising hydrogen gas water and an alkaline solution.
In one embodiment, the first cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process, and an ultrasonic two-fluid mixing cleaning process.
In one embodiment, after the step of performing the first cleaning of the photomask with the first solution including hydrogen gas water and an alkaline solution, the method includes:
performing second cleaning on the photomask by adopting the first solution; the second cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process and an ultrasonic two-fluid mixing cleaning process; the second cleaning process is different from the first cleaning process.
In one embodiment, after the step of performing the second cleaning of the photomask with the first solution, the method includes:
performing third cleaning on the photomask by adopting the first solution; the third cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process and an ultrasonic two-fluid mixing cleaning process; the process of the third cleaning, the process of the second cleaning, and the process of the first cleaning are different.
In one embodiment, the first cleaning process is a two-fluid cleaning process, the second cleaning process is an ultrasonic two-fluid mixing cleaning process, and the third cleaning process is an ultrasonic cleaning process.
In one embodiment, the alkaline solution comprises tetramethylamino hydroxide, hydrogen peroxide, and deionized water.
In one embodiment, the hydrogen water has a conductivity of 15us/m to 50us/m; the conductivity of the alkaline solution is between 75us/m and 150us/m.
In one embodiment, the cleaning method further comprises:
and infiltrating the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the hydrogen peroxide to decompose by adopting preset light rays so as to clean the photomask.
In one embodiment, in the step of soaking the photomask with the second solution including hydrogen peroxide and exciting the decomposition of the hydrogen peroxide with preset light to clean the photomask, a coverage type spraying manner is adopted to soak the photomask.
In one embodiment, the wavelength of the preset light is between 10nm and 440nm.
In one embodiment, the concentration of the hydrogen peroxide is gradually reduced in the process of impregnating the photomask with the second solution.
In a second aspect, the present application provides another method for cleaning a photomask, including:
performing fourth cleaning on the back surface of the photomask by adopting a first solution comprising hydrogen water and an alkaline solution;
and adopting the first solution to carry out fifth cleaning on the front surface of the photomask.
In one embodiment, the fourth cleaning process and the fifth cleaning process are each any one of a two-fluid cleaning process, an ultrasonic cleaning process, and an ultrasonic two-fluid mixing cleaning process.
In one embodiment, the fourth cleaning process is a two-fluid cleaning process;
after the step of performing the fourth cleaning on the back surface of the photomask by using the first solution including hydrogen gas water and an alkaline solution and before the step of performing the fifth cleaning on the front surface of the photomask by using the first solution, the method further includes:
and ultrasonically cleaning the back surface of the photomask by adopting the first solution.
And/or, the fifth cleaning process is a two-fluid cleaning process;
after the step of performing fifth cleaning on the front surface of the photomask by using the first solution, the method further includes:
carrying out ultrasonic two-fluid mixed cleaning on the front surface of the photomask by adopting the first solution;
and ultrasonically cleaning the front surface of the photomask by adopting the first solution.
In one embodiment, after the step of performing the fourth cleaning on the back surface of the photomask with the first solution including hydrogen gas water and an alkaline solution, and before the step of performing the fifth cleaning on the front surface of the photomask with the first solution, the method further includes:
and infiltrating the front surface of the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the decomposition of the hydrogen peroxide by adopting preset light rays so as to clean the front surface of the photomask.
According to the photomask cleaning method, the first solution comprises the hydrogen water and the alkaline solution, the PH value of the first solution can be improved by utilizing the hydrogen water, when the alkaline solution is used for cleaning inorganic particles on the surface of the photomask, the PH value of the first solution is improved by utilizing the hydrogen water, the electrochemical effect is increased, the repulsive force between the surface of the photomask and the inorganic particles is increased, the inorganic particles are facilitated to stay in the first solution, the probability that the inorganic particles are redeposited and adhered to the surface of the photomask is reduced, and therefore the removal rate of the inorganic particles is improved, and the yield and the utilization rate of the photomask are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or exemplary embodiments of the present application, the drawings that are required in the description of the embodiments or exemplary embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic flow chart of a method for cleaning a photomask according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of another method for cleaning a photomask according to an embodiment of the present application.
Fig. 3 is a schematic flow chart of a method for cleaning a photomask according to an embodiment of the present application.
Fig. 4 is a schematic flow chart of a method for cleaning a photomask according to an embodiment of the present application.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. Furthermore, the device may also include an additional orientation (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," and/or the like, specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
In a first aspect, referring to fig. 1, an embodiment of the present application provides a method for cleaning a photomask, which specifically includes the following steps:
s1000: the photomask is first cleaned using a first solution comprising hydrogen gas water and an alkaline solution. Here, an alkaline solution is used to clean inorganic particles of the photomask and hydrogen gas water is used to raise the PH of the first solution.
It should be noted that, the step may be to perform the first cleaning on the front surface of the photomask, or may be to perform the first cleaning on the back surface of the photomask.
In the embodiment of the application, the first solution comprises the hydrogen water and the alkaline solution, so that the PH value of the first solution can be improved by utilizing the hydrogen water, and when the alkaline solution is used for cleaning inorganic particles on the surface of the photomask, the PH of the first solution is improved by utilizing the hydrogen water, so that the electrochemical effect is increased, the repulsive force between the surface of the photomask and the inorganic particles is increased, the inorganic particles are facilitated to stay in the first solution, the probability that the inorganic particles are reprecipitated and adhered to the surface of the photomask is reduced, the removal rate of the inorganic particles is improved, and the yield and the utilization rate of the photomask are improved.
In one embodiment, the process of the first cleaning is any one of a two-fluid cleaning process, an ultrasonic cleaning process, and an ultrasonic two-fluid mixing cleaning process.
Here, the two-fluid cleaning process refers to spraying out liquid particles of the first solution in a mist or droplet form through a two-fluid nozzle. The ultrasonic cleaning process refers to the direct or indirect action of cavitation, acceleration and direct flow of ultrasonic wave in the first solution on the first solution and the inorganic particles, so that the inorganic particles are dispersed and peeled off to achieve the cleaning purpose. The ultrasonic two-fluid mixing cleaning process refers to: the cleaning process combining the two-fluid cleaning process and the ultrasonic cleaning process comprises the following steps: and (5) synchronously performing two-fluid cleaning and ultrasonic cleaning on the photomask.
In the embodiment of the application, on one hand, the liquid drops can be smaller by the two-fluid cleaning process and the ultrasonic cleaning process, so that the liquid drops can extend into the grooves, the inside of the grooves can be cleaned effectively, and the removal rate of inorganic particles is improved; on the other hand, compared with the mode of high-pressure water flushing and ultrasonic cleaning in the prior art, the damage of physical force to the mask plate can be effectively reduced by adopting a two-fluid cleaning process and an ultrasonic cleaning process, and the damage of high-precision patterns such as SRAF (Sub Resolution Assist Feature, resolution auxiliary patterns) and the like and a film layer can be reduced, so that the yield and the utilization rate of the mask plate are improved.
In one embodiment, the alkaline solution comprises tetramethylamino hydroxide, hydrogen peroxide, and deionized water. Here, compared with a strong alkaline solution (such as ammonia water), the tetramethyl amino hydroxide (Tetramethylammonium hydroxide, TMAH) has more stable properties, is not easy to form new impurities with impurities on the surface of the photomask, and is not easy to adversely affect the metal film layer on the photomask. In addition, after the completion of the washing, the alkaline solution has a low ion residue content, and does not generate alkali ion residues such as ammonium groups, as compared with ammonia water. Here, after the alkali ion residue such as ammonium ion passes through the subsequent semiconductor lithography end-flow sheet, the problem of Haze due to the excessively high ion residue is extremely likely to occur, and the formation of lithography abnormality affects the imaging.
In one embodiment, the hydrogen water has a conductivity of 15 to 50us/m and the alkaline solution has a conductivity of 75 to 150us/m. In the embodiment of the present application, the conductivities of the hydrogen gas water and the alkaline solution are measured respectively when the first solution is prepared, and after the conductivities of the hydrogen gas water and the alkaline solution are respectively within the above ranges, the hydrogen gas water and the alkaline solution are mixed to form the first solution. Namely: the mixing ratio of the hydrogen water and the alkaline solution is controlled by controlling the conductivity of the hydrogen water and the alkaline solution, so that the first solution has a good reaction effect when the photomask is cleaned.
In one embodiment, referring to fig. 2, after S1000, the method further includes the following steps:
s2000: and performing second cleaning on the photomask by adopting the first solution. Wherein the second cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process and an ultrasonic two-fluid mixing cleaning process, and is different from the first cleaning process.
Here, in the two-fluid cleaning, the liquid particles are in the form of mist droplets, and when the mist-droplet-like liquid is applied to a photomask having a large line width, the effect of removing the inorganic particles is good. During ultrasonic cleaning, the liquid particles are smaller liquid drops, the outer diameter of the liquid drops is smaller than that of fog drops in the two-fluid cleaning process, and the liquid drops have good effect of removing small inorganic particles in the grooves when being applied to photomasks with smaller line widths. The first cleaning process and the second cleaning process are different, which is equivalent to combining the two-fluid cleaning and the ultrasonic cleaning, thereby being beneficial to removing larger inorganic particles and smaller inorganic particles, and further leading the removing effect of the inorganic particles to be better.
In one example, the first cleaning process is a two-fluid cleaning process and the second cleaning process is an ultrasonic cleaning process or an ultrasonic two-fluid mixing cleaning process.
Thus, the first cleaning corresponds to the rough cleaning, namely: mainly removing the inorganic particles with large particle size. The second cleaning corresponds to the fine cleaning, namely: mainly removing the inorganic particles with small particle size. Further, in the course of the rough cleaning, part of the large-particle-size inorganic particles are decomposed into small-particle-size inorganic particles, and the small-particle-size inorganic particles are easy to adhere to the bottom of the groove or the surface of the photomask, so that the fine cleaning is performed after the rough cleaning, the small-particle-size inorganic particles adhering to the bottom of the groove or the surface of the photomask can be removed, and the removal effect of the inorganic particles is better.
It should be noted that this step may be the second cleaning of the front surface of the photomask, or the second cleaning of the back surface of the photomask. If the step S1000 is to clean the front surface of the photomask and the step S2000 is to clean the front surface of the photomask, the step S1000 may be executed first and then the step S2000 may be executed; if the step S1000 is to clean the back surface of the photomask and the step S2000 is to clean the back surface of the photomask, the step S1000 may be executed first and then the step S2000 may be executed; if the step S1000 is to clean the back surface of the photomask and the step S2000 is to clean the front surface of the photomask, the step S1000 may be executed first and then the step S2000 may be executed; if the front surface of the photomask is cleaned in S1000 and the back surface of the photomask is cleaned in S2000, step S2000 may be performed first and then step S1000 may be performed. That is, the back side of the photomask is cleaned first, and then the front side of the photomask is cleaned. The method comprises the steps of firstly cleaning the back surface of the photomask, and then cleaning the front surface of the photomask. Because the front surface of the photomask is provided with the product graph, the cleaning requirement on the front surface is high in comparison with the cleaning requirement on the back surface, if the back surface is cleaned after the front surface is cleaned, dirty objects are easily cleaned to the front surface when the back surface is cleaned, and therefore the front surface is cleaned by one step after the back surface is cleaned, and resource waste and complicated steps are easily caused; however, according to the operation flow of the application, the back surface is cleaned first and then the front surface is cleaned, worry about running of dirty things to the front surface when the back surface is cleaned is avoided, one-step cleaning operation on the front surface is saved, the steps are simple, and resources are saved.
In one embodiment, referring to fig. 2, after S2000, the method further specifically includes the following steps:
s3000: and performing third cleaning on the photomask by adopting the first solution. The third cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process and an ultrasonic two-fluid mixing cleaning process. The process of the third cleaning, the process of the second cleaning, and the process of the first cleaning are different.
It should be noted that, each cleaning process has different cleaning effects for particles with different particle diameters, and the combination of the three cleaning processes is beneficial to removing larger inorganic particles and smaller inorganic particles, so that the inorganic particles are better in removing effect.
In one embodiment, the first cleaning process is a two-fluid cleaning process, the second cleaning process is an ultrasonic two-fluid mixing cleaning process, and the third cleaning process is an ultrasonic cleaning process.
Thus, the first cleaning corresponds to a rough cleaning, the second cleaning corresponds to a fine cleaning, and the third cleaning corresponds to ending the entire cleaning process. Specifically, during the course of rough cleaning, part of the large-sized inorganic particles are decomposed into small-sized inorganic particles, which are easily attached to the bottom of the grooves or the surface of the photomask. In the fine cleaning process, small-particle-diameter inorganic particles attached to the bottom of the groove or the surface of the photomask can be cleaned to the outside of the groove or the edge position of the surface of the photomask. In the third cleaning process, inorganic particles outside the grooves and at the edge of the surface of the photomask can be thoroughly removed, so that the removal rate of the inorganic particles is improved.
In one embodiment, the duration of the cleaning is between 90s and 300s during the process of cleaning the photomask with the first solution. Illustratively, the cleaning duration may be 90s, 100s, 120s, 150s, 170s, 190s, 230s, 260s, 285s, 300s or between any two of the above values. Therefore, on one hand, the cleaning device can ensure a better cleaning effect, and on the other hand, the cleaning device is beneficial to controlling the cleaning cost.
In one embodiment, the ultrasonic frequency is between 1MHZ and 5MHZ, and may be, for example, 1MHZ, 2MHZ, 3MHZ, 4MHZ, 5MHZ, or between any two of the foregoing values, when an ultrasonic cleaning process is employed. The ultrasonic power is between 6W and 38W, and may be, for example, 6W, 10W, 15W, 24W, 32W, 38W or between any two of the above values.
In one embodiment, referring to fig. 2, if S1000 is to perform the first cleaning on the front surface of the photomask, the method further includes, before S1000, the following steps:
s500: soaking the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the hydrogen peroxide to decompose by adopting preset light so as to clean the photomask.
The hydrogen peroxide is excited to decompose to generate stable-quantity H-containing hydrogen peroxide without oxygen ions + OH and OH + The hydroxyl ion group solution can effectively remove organic impurities on the surface of the photomask on one hand, and can reduce the damage of the second solution to the photomask on the other hand.
Here, since inorganic byproducts are easily generated during the process of cleaning the organic impurities, the cleaning effect can be effectively improved by removing the inorganic byproducts generated during the S500 process in the subsequent S1000 by performing S500 before S1000.
In one embodiment, if S1000 is the first cleaning of the back surface of the photomask, after S1000, the method further includes the following steps:
s500: soaking the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the hydrogen peroxide to decompose by adopting preset light so as to clean the photomask.
Illustratively, following S500, the steps further include: the photomask is first cleaned using a first solution comprising hydrogen gas water and an alkaline solution. And performing second cleaning on the photomask by adopting the first solution. And performing third cleaning on the photomask by adopting the first solution.
Illustratively, the first cleaning process is a two-fluid cleaning process, the second cleaning process is an ultrasonic two-fluid mixing cleaning process, and the third cleaning process is an ultrasonic cleaning process.
The description of the above steps is referred to the above embodiments, and will not be repeated here.
In one conventional technique, ozone water is decomposed, and because the characteristics of ozone water are extremely active and unstable, ozone water is prone to generating various strong oxidizing ions (e.g., oxygen 1-valent, 2-valent, 3-valent ions, etc.) during the decomposition process, which adversely affects the photomask. The hydrogen peroxide in the embodiment of the application can replace the traditional ozone water decomposition, so that the adverse effect of strong oxidizing ions on the photomask is improved.
In another conventional technique, a sulfuric acid process, such as sulfuric acid hydrogen Peroxide (SPM), is used for cleaning, and since the sulfuric acid process contains sulfur ions, on one hand, the sulfur ions may damage the film layer, and on the other hand, the residual sulfate ions may form haze, which may seriously affect the quality of subsequent photolithography. The hydrogen peroxide in the embodiment of the application can replace the traditional sulfuric acid process, so that the damage of sulfur ions to the film layer is reduced, and the adverse effect of sulfate ion residues is reduced.
It should be noted that, the applicant has performed experimental verification on the cleaning method provided in the embodiment of the present application, and experimental data show that: the line width loss of the product after 10 times of cleaning is about 0.2nm, the difference of film transmission loss is about 0.02 percent, the removal rate of organic matters and inorganic particles is more than 97 percent, and the ion residual concentration test value is below 0.05 ppb. Therefore, after the cleaning method is adopted for cleaning, the film layer of the photomask is hardly damaged. The cleaning method provided by the embodiment of the application can obviously reduce the failure problem of graph lines and film penetration damage or destruction, improve the cleaning capability of inorganic particles, and comprehensively improve the process yield of the cleaning process of high-end masks such as ARF phase shift masks, bipolar masks, EUVL (Extreme ultraviolet lithography) masks and the like; on the other hand, the production process cost can be reduced, and the circulation efficiency of the product manufacturing process can be improved; in another aspect, the cleaning process is environment-friendly and is more beneficial to ecological development.
In one embodiment, in S500, the photomask is infiltrated with an overlay spray. Here, the covered spray means: synchronous spraying is carried out on the surface (front surface or back surface) to be cleaned of the photomask, namely: the entire surface of the surface to be cleaned is sprayed with the second solution within 1s-2 s. Thus, the second solution can be uniformly coated on the surface to be cleaned, and can react with the photoresist and other organic impurities on the surface of the photomask sufficiently and quickly, so that the organic impurities can be effectively dissolved and removed.
In one embodiment, the predetermined light has a wavelength between 10nm and 440nm. Thus, the hydrogen peroxide is decomposed.
In one example, the preset light may be G-line, H-line, I-line, or UV (Ultraviolet).
In a preferred example, the predetermined light is UV light. Thus, on one hand, the cleaning cost is reduced; on the other hand, the decomposition effect of the hydrogen peroxide is good.
In one embodiment, the concentration of hydrogen peroxide is gradually reduced during the process of impregnating the photomask with the second solution. In one example, the hydrogen peroxide concentration decreases linearly from 10% to 5%.
Therefore, the PH of the second solution can be slowly reduced, so that the photomask is gradually transited from an acidic environment to an alkaline environment, and the photomask is easy to adapt to the change of PH, thereby reducing the damage probability of the photomask.
In one embodiment, in S500, the cleaning time period is between 300S and 600S. Illustratively, the cleaning duration may be 300s, 400s, 500s, 550s, 600s or between any two of the foregoing values. Therefore, on one hand, the cleaning device can ensure a better cleaning effect, and on the other hand, the cleaning device is beneficial to controlling the cleaning cost.
In a second aspect, referring to fig. 3, another method for cleaning a photomask is provided in an embodiment of the present application, and specifically includes the following steps:
s100: and performing fourth cleaning on the back surface of the photomask by adopting a first solution comprising hydrogen water and an alkaline solution. Here, an alkaline solution is used to clean inorganic particles of the photomask and hydrogen gas water is used to raise the PH of the first solution. Thus, inorganic particles on the back surface of the photomask can be effectively removed.
In one example, the alkaline solution includes tetramethylamino hydroxide, hydrogen peroxide, and deionized water.
S200: and fifth cleaning the front surface of the photomask by adopting the first solution. Thus, inorganic particles on the front surface of the photomask can be effectively removed.
In the embodiment of the application, the first solution comprises the hydrogen water and the alkaline solution, so that the PH value of the first solution can be improved by utilizing the hydrogen water, and when the alkaline solution is used for cleaning inorganic particles on the surface of the photomask, the PH of the first solution is improved by utilizing the hydrogen water, so that the electrochemical effect is increased, the repulsive force between the surface of the photomask and the inorganic particles is increased, the inorganic particles are facilitated to stay in the first solution, the probability that the inorganic particles are reprecipitated and adhered to the surface of the photomask is reduced, the removal rate of the inorganic particles is improved, and the yield and the utilization rate of the photomask are improved.
In one embodiment, the fourth cleaning process and the fifth cleaning process are each any one of a two-fluid cleaning process, an ultrasonic cleaning process, and an ultrasonic two-fluid mixing cleaning process.
Here, the two-fluid cleaning process refers to spraying out liquid particles of the first solution in a mist or droplet form through a two-fluid nozzle. The ultrasonic cleaning process refers to the direct or indirect action of cavitation, acceleration and direct flow of ultrasonic wave in the first solution on the first solution and the inorganic particles, so that the inorganic particles are dispersed and peeled off to achieve the cleaning purpose. The ultrasonic two-fluid mixing cleaning process refers to: the cleaning process combining the two-fluid cleaning process and the ultrasonic cleaning process comprises the following steps: and (5) synchronously performing two-fluid cleaning and ultrasonic cleaning on the photomask.
In the embodiment of the application, on one hand, the liquid drops can be smaller by the two-fluid cleaning process and the ultrasonic cleaning process, so that the liquid drops can extend into the grooves, the inside of the grooves can be cleaned effectively, and the removal rate of inorganic particles is improved; on the other hand, compared with the mode of high-pressure water flushing and ultrasonic cleaning in the prior art, the damage of physical force to the mask plate can be effectively reduced by adopting a two-fluid cleaning process and an ultrasonic cleaning process, and the damage of high-precision patterns such as SRAF (Sub Resolution Assist Feature, resolution auxiliary patterns) and the like and a film layer can be reduced, so that the yield and the utilization rate of the mask plate are improved.
In one embodiment, the fourth cleaning process is a two-fluid cleaning process, and the fourth cleaning time period is 120s-300s. After S100, and before S200, the method further includes the following steps:
s150: and ultrasonically cleaning the back surface of the photomask by adopting the first solution. Illustratively, the ultrasonic frequency is between 1MHz and 3MHz, the ultrasonic power is between 6W and 38W, and the cleaning time period is between 120s and 300s.
Thus, S100 corresponds to rough cleaning, namely: mainly removing the inorganic particles with large particle size. S150 corresponds to a fine cleaning, namely: mainly removing the inorganic particles with small particle size. Further, in the course of the rough cleaning, part of the large-particle-size inorganic particles are decomposed into small-particle-size inorganic particles, and the small-particle-size inorganic particles are easy to adhere to the bottom of the groove or the surface of the photomask, so that the fine cleaning is performed after the rough cleaning, the small-particle-size inorganic particles adhering to the bottom of the groove or the surface of the photomask can be removed, and the removal effect of the inorganic particles is better.
In one embodiment, the fifth cleaning process is a two-fluid cleaning process, with a cleaning duration between 90s and 180s. After S200, the method further includes the following steps:
s210: and carrying out ultrasonic two-fluid mixed cleaning on the front surface of the photomask by adopting the first solution. Illustratively, the ultrasonic frequency is between 3MHz and 5MHz, the ultrasonic power is between 6W and 38W, and the cleaning time period is between 120s and 300s.
S220: and ultrasonically cleaning the front surface of the photomask by adopting the first solution. Illustratively, the cleaning time period is between 90s and 120s.
Thus, S200 corresponds to the rough cleaning, S210 corresponds to the finish cleaning, and S220 corresponds to ending the entire cleaning process. Specifically, during the course of rough cleaning, part of the large-sized inorganic particles are decomposed into small-sized inorganic particles, which are easily attached to the bottom of the grooves or the surface of the photomask. In the fine cleaning process, small-particle-diameter inorganic particles attached to the bottom of the groove or the surface of the photomask can be cleaned to the outside of the groove or the edge position of the surface of the photomask. In S220, inorganic particles outside the grooves and at the edge of the surface of the photomask may be completely removed, thereby improving the removal rate of the inorganic particles.
In one embodiment, after S100 and before S200, the method further includes the following steps:
s170: and infiltrating the front surface of the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the decomposition of the hydrogen peroxide by adopting preset light rays so as to clean the front surface of the photomask. In one example, the preset light may be G-line, H-line, I-line, or UV (Ultraviolet). In one example, the photomask is wetted by a blanket spray method, and the cleaning time is 300s-600s.
The solution which does not contain oxygen ions, has stable quantity and contains H+ and OH+ hydroxyl ion groups can be generated by exciting the decomposition of hydrogen peroxide, so that on one hand, the organic impurities on the front surface of the photomask can be effectively removed, and on the other hand, the damage of the second solution to the photomask can be reduced.
In one embodiment, before S100, the method further includes the following steps:
s90: and pre-cleaning the photomask. In one example, the photomask is pre-cleaned with deionized water. Thus, larger impurity particles on the photomask can be removed in advance.
In one embodiment, after S150, before S200, the method further includes the following steps:
s160: and (5) flushing the back surface of the photomask by deionized water. In one example, the flush time may be between 90s and 120s. It will be appreciated that after the rinse is complete, the photomask may be flipped over with the front side of the photomask facing upward.
In one embodiment, after S200, the method further includes the following steps:
s230: and (5) flushing the front surface of the photomask by deionized water. Illustratively, the flush time may be between 120s-180s.
S240: and (5) spin-drying the photomask. Specifically, a rotating device can be used to drive the photomask to rotate, so as to spin-dry the aqueous solution on the photomask. Illustratively, the spin time is between 150s and 250s.
The method comprises the steps of firstly cleaning the back surface of the photomask, and then cleaning the front surface of the photomask. Because the front surface of the photomask is provided with the product graph, the cleaning requirement on the front surface is high in comparison with the cleaning requirement on the back surface, if the back surface is cleaned after the front surface is cleaned, dirty objects are easily cleaned to the front surface when the back surface is cleaned, and therefore the front surface is cleaned by one step after the back surface is cleaned, and resource waste and complicated steps are easily caused; however, according to the operation flow of the application, the back surface is cleaned first and then the front surface is cleaned, worry about running of dirty things to the front surface when the back surface is cleaned is avoided, one-step cleaning operation on the front surface is saved, the steps are simple, and resources are saved.
The method and the device have the advantages that the hydrogen peroxide and the first solution are used for cleaning the photomask, the step of cleaning the photomask by hot deionized water is not needed when the front surface of the photomask is cleaned, the probability of damage to a high-precision graph film layer on the front surface of the photomask and the probability of harmful chemical ion residue are reduced, the more the harmful chemical ion residue is, the greater the probability of forming a Haze problem by subsequent photoetching is, and the Haze problem is the primary problem affecting the photoetching precision and defect generation of the end of the subsequent wafer.
From the above description of the embodiments, more particular embodiments and figures are set forth below in detail.
Referring to fig. 4, a method for cleaning a photomask includes:
s1: and pre-cleaning the photomask. In one example, the photomask is pre-cleaned with deionized water. Thus, larger impurity particles on the photomask can be removed in advance.
S2: the back surface of the photomask is subjected to two-fluid cleaning by adopting a first solution comprising hydrogen gas water and an alkaline solution. Specifically, the alkaline solution comprises tetramethyl amino hydroxide, hydrogen peroxide and deionized water, and the cleaning time is 120-300 s.
S3: and ultrasonically cleaning the back surface of the photomask by adopting the first solution. Specifically, the ultrasonic frequency is between 1 and 3MHz, the ultrasonic power is between 6 and 38W, and the cleaning time is between 120 and 300 seconds.
S4: and (5) flushing the back surface of the photomask by deionized water. In particular, the flushing time may be between 90s and 120s. It will be appreciated that after the rinse is complete, the photomask may be flipped over with the front side of the photomask facing upward.
S5: and infiltrating the front surface of the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the decomposition of the hydrogen peroxide by adopting preset light rays so as to clean the front surface of the photomask. Specifically, the preset light is Ultraviolet (UV), and the cleaning time is 300s-600s. The photomask is soaked in a covering spraying mode, and the concentration of hydrogen peroxide is linearly reduced from 10% to 5% in the cleaning process.
S6: and adopting the first solution to carry out two-fluid cleaning on the front surface of the photomask. Specifically, the cleaning time is between 90s and 180s.
S7: and carrying out ultrasonic two-fluid mixed cleaning on the front surface of the photomask by adopting the first solution. Specifically, the ultrasonic frequency is between 3 and 5MHz, the ultrasonic power is between 6 and 38W, and the cleaning time is between 120 and 300 seconds.
S8: and ultrasonically cleaning the front surface of the photomask by adopting the first solution. Specifically, the cleaning time is between 90s and 120s.
S9: and (5) flushing the front surface of the photomask by deionized water. Specifically, the flushing time is between 120s and 180s.
S10: and (5) spin-drying the photomask. Specifically, the photomask plate can be driven to rotate by adopting a rotating device, so that the aqueous solution on the photomask plate is spin-dried, and the spin-drying time is 150-250 s.
According to the method for cleaning the photomask, on one hand, the first solution comprises the hydrogen water and the alkaline solution, the PH value of the first solution can be improved by utilizing the hydrogen water, and when the alkaline solution is used for cleaning inorganic particles on the surface of the photomask, the PH value of the first solution is improved by utilizing the hydrogen water, so that the electrochemical effect is increased, repulsive force between the surface of the photomask and the inorganic particles is increased, the inorganic particles are facilitated to stay in the first solution, the probability that the inorganic particles are reprecipitated and adhered to the surface of the photomask is reduced, and the removal rate of the inorganic particles is improved, and the yield and the utilization rate of the photomask are improved.
On the other hand, the two fluid cleaning process and the ultrasonic cleaning process can enable the liquid drops to be smaller, so that the liquid drops can extend into the grooves, the grooves are effectively cleaned, and the removal rate of inorganic particles is improved;
on the other hand, compared with the mode of high-pressure water flushing and ultrasonic cleaning in the prior art, the damage of physical force to the mask plate can be effectively reduced by adopting a two-fluid cleaning process and an ultrasonic cleaning process, and the damage of high-precision patterns such as SRAF (Sub Resolution Assist Feature, resolution auxiliary patterns) and the like and a film layer can be reduced, so that the yield and the utilization rate of the mask plate are improved.
On the other hand, the solution which does not contain oxygen ions, has stable quantity and contains H+ and OH+ hydroxyl ion groups can be generated by exciting the hydrogen peroxide to decompose, so that on the one hand, the organic impurities on the front surface of the photomask can be effectively removed, and on the other hand, the damage of the second solution to the photomask can be reduced.
On the other hand, the method can remarkably reduce the failure problem of pattern lines and film penetration damage or destruction, improve the cleaning capability of inorganic particles, and comprehensively improve the process yield of the cleaning process of high-end masks such as ARF phase shift masks, bipolar masks, EUVL (Extreme ultraviolet) masks and the like. On the other hand, the production process cost can be reduced, and the product process circulation efficiency can be improved. On the other hand, the cleaning process is green and environment-friendly, and is more beneficial to ecological development.
It should be understood that, in the embodiments of the present application, at least a part of the steps in the drawings may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with other steps or at least a part of the steps or stages in other steps.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (15)
1. The method for cleaning the photomask plate is characterized by comprising the following steps of:
the photomask is first cleaned using a first solution comprising hydrogen gas water and an alkaline solution.
2. The method of cleaning a photomask according to claim 1, wherein the first cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process, and an ultrasonic-two-fluid hybrid cleaning process.
3. The method according to claim 2, wherein after the step of performing the first cleaning of the photomask with the first solution including hydrogen gas water and an alkaline solution, the method comprises:
performing second cleaning on the photomask by adopting the first solution; the second cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process and an ultrasonic two-fluid mixing cleaning process; the second cleaning process is different from the first cleaning process.
4. A method of cleaning a photomask according to claim 3, wherein after said step of performing a second cleaning of said photomask with said first solution, the method comprises:
performing third cleaning on the photomask by adopting the first solution; the third cleaning process is any one of a two-fluid cleaning process, an ultrasonic cleaning process and an ultrasonic two-fluid mixing cleaning process; the process of the third cleaning, the process of the second cleaning, and the process of the first cleaning are different.
5. The method according to claim 4, wherein the first cleaning process is a two-fluid cleaning process, the second cleaning process is an ultrasonic two-fluid hybrid cleaning process, and the third cleaning process is an ultrasonic cleaning process.
6. The method of any one of claims 1-5, wherein the alkaline solution comprises tetramethylamino hydroxide, hydrogen peroxide, and deionized water.
7. The method of any one of claims 1-5, wherein the hydrogen gas water has a conductivity of 15us/m to 50us/m; the conductivity of the alkaline solution is between 75us/m and 150us/m.
8. The method of cleaning a photomask of any of claims 1-5, further comprising:
and infiltrating the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the hydrogen peroxide to decompose by adopting preset light rays so as to clean the photomask.
9. The method according to claim 8, wherein in the step of cleaning the photomask by immersing the photomask in the second solution including hydrogen peroxide and decomposing the hydrogen peroxide by exciting a preset light, the photomask is immersed in a blanket spray manner.
10. The method for cleaning a photomask according to claim 8, wherein the wavelength of the predetermined light is between 10nm and 440nm.
11. The method for cleaning a photomask according to claim 8, wherein the concentration of hydrogen peroxide is gradually decreased in the process of impregnating the photomask with the second solution.
12. The method for cleaning the photomask plate is characterized by comprising the following steps of:
performing fourth cleaning on the back surface of the photomask by adopting a first solution comprising hydrogen water and an alkaline solution;
and adopting the first solution to carry out fifth cleaning on the front surface of the photomask.
13. The method according to claim 12, wherein the fourth cleaning process and the fifth cleaning process are each any one of a two-fluid cleaning process, an ultrasonic cleaning process, and an ultrasonic-two-fluid hybrid cleaning process.
14. The method of claim 13, wherein the fourth cleaning process is a two-fluid cleaning process;
after the step of performing the fourth cleaning on the back surface of the photomask by using the first solution including hydrogen gas water and an alkaline solution and before the step of performing the fifth cleaning on the front surface of the photomask by using the first solution, the method further includes:
ultrasonically cleaning the back surface of the photomask by adopting the first solution;
and/or, the fifth cleaning process is a two-fluid cleaning process;
after the step of performing fifth cleaning on the front surface of the photomask by using the first solution, the method further includes:
carrying out ultrasonic two-fluid mixed cleaning on the front surface of the photomask by adopting the first solution;
and ultrasonically cleaning the front surface of the photomask by adopting the first solution.
15. The method of cleaning a photomask of claim 13, wherein after the step of fourth cleaning the back surface of the photomask with the first solution including hydrogen gas water and an alkaline solution, and before the step of fifth cleaning the front surface of the photomask with the first solution, further comprising:
and infiltrating the front surface of the photomask by adopting a second solution comprising hydrogen peroxide, and exciting the decomposition of the hydrogen peroxide by adopting preset light rays so as to clean the front surface of the photomask.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003195482A (en) * | 2001-12-25 | 2003-07-09 | Shin Etsu Chem Co Ltd | Photomask blank and method for manufacturing the same |
| JP2009122313A (en) * | 2007-11-14 | 2009-06-04 | Dainippon Printing Co Ltd | Method for cleaning mask substrate |
| CN110392864A (en) * | 2017-03-29 | 2019-10-29 | 东丽株式会社 | Negative light-sensitive resin combination, cured film, the element for having cured film and organic el display and its manufacturing method |
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- 2024-01-10 CN CN202410042215.3A patent/CN117608161A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003195482A (en) * | 2001-12-25 | 2003-07-09 | Shin Etsu Chem Co Ltd | Photomask blank and method for manufacturing the same |
| JP2009122313A (en) * | 2007-11-14 | 2009-06-04 | Dainippon Printing Co Ltd | Method for cleaning mask substrate |
| CN110392864A (en) * | 2017-03-29 | 2019-10-29 | 东丽株式会社 | Negative light-sensitive resin combination, cured film, the element for having cured film and organic el display and its manufacturing method |
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