CN117595824A - Temperature compensation crystal oscillator, manufacturing method thereof and electronic equipment - Google Patents
Temperature compensation crystal oscillator, manufacturing method thereof and electronic equipment Download PDFInfo
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- CN117595824A CN117595824A CN202311543288.2A CN202311543288A CN117595824A CN 117595824 A CN117595824 A CN 117595824A CN 202311543288 A CN202311543288 A CN 202311543288A CN 117595824 A CN117595824 A CN 117595824A
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- 239000013078 crystal Substances 0.000 title claims abstract description 165
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000010355 oscillation Effects 0.000 claims abstract description 74
- 239000004020 conductor Substances 0.000 claims abstract description 39
- 238000009413 insulation Methods 0.000 claims abstract description 31
- 238000004806 packaging method and process Methods 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000919 ceramic Substances 0.000 claims description 32
- 238000005137 deposition process Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
- H03L1/022—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only by indirect stabilisation, i.e. by generating an electrical correction signal which is a function of the temperature
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The application relates to a temperature compensation crystal oscillator, a manufacturing method thereof and electronic equipment. The temperature compensation crystal oscillator comprises a crystal resonator, a temperature compensation oscillation chip with a temperature sensor arranged inside, an insulating layer and a first electrode structure, wherein the crystal resonator comprises a vibrating element and an airtight packaging structure which is packaged at the periphery of the vibrating element; the temperature compensation oscillation chip is arranged on one side of the airtight packaging structure; the insulating layer covers at least one side of the temperature compensation oscillation chip and the airtight packaging structure, the insulating layer is provided with a first through hole, a conductive material is arranged in the first through hole, the insulating layer is provided with a heat insulation cavity, the heat insulation cavity comprises a sealing cavity and/or a semi-sealing cavity, and gas or vacuum is arranged in the heat insulation cavity; the first electrode structure is arranged on the insulating layer and is electrically connected with the temperature compensation oscillation chip through the conductive material in the first conducting hole.
Description
Technical Field
The present disclosure relates to the field of temperature compensated crystal oscillators (Temperature Compensated X' tal Oscillator, TCXOs), and more particularly to a temperature compensated crystal Oscillator, a method for manufacturing the same, and an electronic device.
Background
In the use of electronic devices, a highly stable clock is usually required, for example, a thermosensitive crystal (Temperature Sensing X 'tal, TSX) is matched with an external processing chip or a temperature compensated crystal Oscillator (Temperature Compensated X' tal Oscillator, TCXO), wherein the temperature compensated crystal Oscillator TCXO generally comprises a resonator and a temperature compensated oscillation chip which are packaged together, and the closer the crystal oscillation element of the resonator and the temperature compensated oscillation chip are required to be, the better the closer the temperature sensed by a temperature sensor built in the temperature sensor is, the closer the temperature sensed by the temperature sensor is to the temperature of the crystal oscillation element.
However, with the development demand of miniaturization of various electronic devices, the package size of the temperature-compensated crystal oscillator is also miniaturized gradually, and the size is difficult to shrink because the existing temperature-compensated crystal oscillator chip is generally required to be arranged in a cavity for protection; in addition, the miniaturized temperature-compensated crystal oscillator has the problems that the thermal response is too fast, the thermal volume of the ceramic base is limited by the material characteristics of the ceramic base, and the ceramic base cannot be reduced, and the like, and particularly the miniaturized H-shaped crystal oscillator with the ceramic base has the air tightness requirement of the traditional crystal oscillator and the bending strength arranged on a circuit board, which are the technical problems to be considered in the temperature-compensated crystal oscillator.
Disclosure of Invention
In view of the above, it is necessary to provide a temperature compensated crystal oscillator which is suitable for miniaturization and limited thermal capacity, a method for manufacturing the same, and an electronic apparatus.
In a first aspect, embodiments of the present application provide a temperature compensated crystal oscillator, which includes a crystal resonator, a temperature compensated oscillation chip with a temperature sensor built therein, an insulating layer, and a first electrode structure. The crystal resonator comprises a vibrating element and an airtight packaging structure which is packaged at the periphery of the vibrating element; the temperature compensation oscillation chip is arranged on one side of the airtight packaging structure; the insulating layer covers at least one side of the temperature compensation oscillation chip and the airtight packaging structure, the insulating layer is provided with a first through hole, a conductive material is arranged in the first through hole, the insulating layer is provided with a heat insulation cavity, the heat insulation cavity comprises a sealing cavity and/or a semi-sealing cavity, and gas or vacuum is arranged in the heat insulation cavity; the first electrode structure is arranged on the insulating layer and is electrically connected with the temperature compensation oscillation chip through the conductive material in the first conducting hole.
In one embodiment, the crystal resonator is a ceramic-packaged crystal resonator, the airtight packaging structure includes a ceramic substrate having a cavity, a cover plate covering the ceramic substrate, and a second electrode structure disposed on the ceramic substrate, a conductor structure is disposed in the ceramic substrate, the vibration element is disposed in the cavity and is connected with the ceramic substrate through an adhesive, and the second electrode structure is further electrically connected with the conductor structure and the temperature-compensated oscillation chip.
In one embodiment, the crystal resonator is a fully crystal packaged crystal resonator, the hermetic package structure includes a first sealing member disposed on one side of the vibration element, a second sealing member disposed on the other side of the vibration element, and a second electrode structure disposed on the first sealing member, the vibration element, and the second sealing member each include a crystal material, the second electrode structure is electrically connected with the temperature compensated oscillation chip, the temperature compensated oscillation chip is disposed on the first sealing member and electrically connected with the second electrode structure, and the insulating layer covers the temperature compensated oscillation chip and the first sealing member.
In one embodiment, the insulating layer further has a second via hole having a conductive material therein, the second electrode structure being electrically connected to the temperature compensated oscillation chip via the conductive material in the second via hole; the insulation layer is arranged on at least one side of the temperature compensation oscillation chip and the airtight packaging structure through a first semiconductor deposition process, the first via hole is formed in the insulation layer through a first semiconductor etching process, the conductive material in the first via hole is formed in the first via hole through a second semiconductor deposition process, and the first electrode structure is formed on the insulation layer through the second semiconductor deposition process or a third semiconductor deposition process; the second via hole is formed in the insulating layer through a second semiconductor etching process, the conductive material in the second via hole is formed in the second via hole through a fourth semiconductor deposition process, and the second electrode structure is formed on the first sealing member through the fourth semiconductor deposition process or a fifth semiconductor deposition process.
In one embodiment, the sealed cavity is a gas, and the gas is air.
In one embodiment, the sealed cavity is formed by etching a portion of the insulating layer through a third semiconductor etching process to form a semi-enclosed cavity, and further by covering an opening of the semi-enclosed cavity with another portion of the insulating layer.
In one embodiment, the insulating cavity comprises the semi-enclosed cavity, which is a groove structure disposed around the periphery of the first electrode structure.
In a second aspect, embodiments of the present application provide a method for manufacturing a temperature compensated crystal oscillator, including: providing a temperature compensation oscillation chip with a built-in temperature sensor; providing a crystal resonator, and arranging the crystal resonator on one side of the temperature compensation oscillation chip, wherein the crystal resonator comprises a vibrating element and an airtight packaging structure which is packaged at the periphery of the vibrating element; forming an insulating layer with a first via hole and a heat insulation cavity on at least one side of the temperature compensation oscillation chip and the airtight packaging structure, wherein a conductive material is arranged in the first via hole, the heat insulation cavity comprises a sealed cavity and/or a semi-sealed cavity, and gas or vacuum is arranged in the heat insulation cavity; and forming a first electrode structure on the insulating layer, and enabling the first electrode structure to be electrically connected with the temperature compensation oscillation chip through the conductive material in the first via hole.
In one embodiment, the crystal resonator is a ceramic-packaged crystal resonator, a full-crystal-packaged crystal resonator, the insulating layer is deposited on at least one side of the temperature-compensated oscillation chip and the hermetic package structure by a first semiconductor deposition process, the first via is formed in the insulating layer by a semiconductor etching process, the conductive material in the first via is formed in the first via by a second semiconductor deposition process, and the first electrode structure is formed on the insulating layer by a third semiconductor deposition process.
In one embodiment, the sealed cavity is filled with a gas, the gas is air, and the sealed cavity is formed by etching a part of the insulating layer through a third semiconductor etching process to form a semi-closed cavity, and further covering an opening of the semi-closed cavity through another part of the insulating layer.
In a third aspect, an embodiment of the present application provides an electronic device, which includes a circuit board, where the temperature compensated crystal oscillator described in any one of the embodiments is disposed on the circuit board.
According to the temperature compensation crystal oscillator, the manufacturing method thereof and the electronic equipment, the temperature compensation oscillation chip is directly arranged on one side of the packaged airtight packaging structure of the crystal resonator, the crystal resonator and the temperature compensation oscillation chip are sealed and protected through the insulating layer, a bearing substrate and a cavity of the temperature compensation oscillation chip are not required to be arranged for packaging the crystal resonator and the temperature compensation oscillation chip, the problem that the size of the temperature compensation crystal oscillator is difficult to shrink due to the bearing substrate and the cavity of the temperature compensation oscillation chip is avoided, and packaging of the miniaturized temperature compensation crystal oscillator can be achieved. And, because the insulating layer covers the temperature compensation oscillation chip, the temperature compensation oscillation chip is not exposed outside, and the temperature compensation oscillation chip can be better protected. In addition, the first electrode structure is arranged on the insulating layer, so that stress generated by a client application end of the temperature compensation crystal oscillator placed on a circuit board can be dealt with, and the temperature compensation crystal oscillator has a buffering function, and therefore reliability of the temperature compensation crystal oscillator and the circuit board of the electronic device with the temperature compensation crystal oscillator is improved.
Furthermore, the thermal insulation cavity in the insulation layer can improve thermal resistance to delay thermal shock of an external heat source to the resonator, has a good heat preservation effect, enables clock oscillation of the temperature compensation crystal oscillator to be more stable, and in addition, the temperature compensation crystal oscillator generally uses a ceramic base and does not need to be directly welded to a circuit board, so that bending strength does not need to be considered, the temperature compensation crystal oscillator can be concentrated on optimizing in size, thickness and/or materials, performance of the temperature compensation crystal oscillator is improved, and design difficulty and cost are reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described below, and it is apparent that the drawings in the following description are only embodiments of the present application, and other drawings may be obtained according to the provided drawings without inventive effort to those of ordinary skill in the art.
Fig. 1 is a schematic cross-sectional structure of a related art temperature compensated crystal oscillator.
Fig. 2 is a schematic cross-sectional structure of another related art temperature compensated crystal oscillator.
Fig. 3 is a schematic cross-sectional structure of a temperature compensated crystal oscillator according to an embodiment of the present application.
Fig. 4 is a schematic top view of a temperature compensated crystal oscillator according to an embodiment of the present application.
Fig. 5 is a schematic bottom view of a temperature compensated crystal oscillator according to an embodiment of the present application.
Fig. 6 is a schematic cross-sectional structure of a temperature compensated crystal oscillator according to a second embodiment of the present application.
Fig. 7 is a schematic cross-sectional structure of a temperature compensated crystal oscillator according to a third embodiment of the present application.
Fig. 8 is a schematic bottom view of a temperature compensated crystal oscillator according to a third embodiment of the present application.
Fig. 9 is a flowchart of a method for manufacturing a temperature compensated crystal oscillator according to a fourth embodiment of the present application.
Fig. 10 is a block schematic diagram of an electronic device provided in a fifth embodiment of the present application.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "inner", "outer", "left", "right" and the like are used herein for illustrative purposes only and do not represent the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, in a related art temperature compensated crystal oscillator 10, a single cavity is formed using a ceramic base 13, and a crystal resonator 11 and an oscillation chip 12 are mounted with different layers, respectively. Generally, the crystal resonator 11 may be a crystal resonator with piezoelectric properties, so that a conductive medium such as a conductive silver paste 15 is required to be used for conducting and fixing the crystal resonator on the ceramic base 13, and since the temperature compensating oscillation chip 12 and the crystal resonator 11 are electrically connected through the ceramic base 13, the pins of the temperature compensating oscillation chip 12 can be measured through an electrode structure 14 (such as a solder pad) at the bottom of the ceramic base 13, so that the process of fine-tuning the frequency can be ensured.
As shown in fig. 2, in another related art temperature compensated crystal oscillator 20, a ceramic base 23 may form an upper and lower double cavity of an H shape, and the advantage of the H shape is that the placement space of the temperature compensated oscillator chip 22 and the crystal resonator 21 can be independent under the space shortage of miniaturization.
As shown in fig. 1 and fig. 2, in the conventional packaging manner, how to compress the package, the carrying substrates such as the ceramic bases 13 and 23 need to be provided with at least bosses for carrying the crystal resonators 11 and 21, and pins of the temperature compensation oscillation chips 12 and 22 need to pass through the electrode structures 14 at the bottoms of the ceramic bases 13 and 23 to be connected and disconnected. However, the inventors have found that the packaging methods of fig. 1 and 2 have some drawbacks. In particular, the miniaturization of the dimensions of the temperature-compensated oscillation chips 12, 22 has a limit, so that the cavity space must be so large that the wall thickness of the ceramic bases 13, 23 is pressed, but only narrower, and the electrode structures 14, 24 are also relatively narrowed. Even some of the most advanced products of international head manufacturers have technical bottlenecks that the temperature compensated crystal oscillator is difficult to miniaturize.
It will be appreciated that, in the above-described packaging method, the miniaturization of the temperature compensated oscillator chips 12, 22 is difficult, which results in difficulty in miniaturization of the cavities of the ceramic bases 13, 23, and thus in miniaturization stagnation of the entire temperature compensated crystal oscillators 10, 20. In addition, as described above, the miniaturized temperature-compensated crystal oscillator has technical problems that the thermal response is too fast, the thermal volume of the ceramic base is limited by the material characteristics of the ceramic base itself, and the air tightness requirement and the bending strength arranged on the circuit board cannot be simultaneously achieved.
In view of this, the present application further provides a temperature compensated crystal oscillator structure and a manufacturing method thereof, which can achieve a miniaturized package, and obtain a temperature compensated crystal oscillator with smaller size and better thermal performance, and a manufacturing method thereof.
The temperature compensated crystal oscillator and the manufacturing method thereof according to the embodiments of the present application are described in further detail below with reference to fig. 3 to 7.
Example 1
Referring to fig. 3 to 5, fig. 3 is a schematic cross-sectional structure of a temperature compensated crystal oscillator 30 according to an embodiment of the present application, fig. 4 is a schematic top surface of the temperature compensated crystal oscillator 30 according to an embodiment of the present application, and fig. 5 is a schematic bottom surface of the temperature compensated crystal oscillator 30 according to an embodiment of the present application. The temperature compensated crystal oscillator 30 includes a crystal resonator 31, an oscillation chip 32, an insulating layer 33, and a first electrode structure 34. The oscillation chip 32 is an oscillation chip with a built-in temperature sensor, and it is understood that the temperature sensor may include one or more thermistors.
The crystal resonator 31 includes a vibrating element 311 and a package 312 that is packaged around the periphery of the vibrating element 311. It will be appreciated that the crystal resonator 31 is a packaged crystal resonator device. In the present embodiment, the crystal resonator 31 is mainly a ceramic-packaged crystal resonator.
The temperature compensated oscillation chip 32 is disposed at one side of the hermetic package structure 312, and may be electrically connected with the hermetic package structure 312.
The insulating layer 33 covers at least one side of the temperature compensated oscillation chip 32 and the hermetic package structure 312, and the insulating layer 33 has a first via 331, and the first via 331 has a conductive material therein. The first electrode structure 34 is disposed on the insulating layer 33 and electrically connected to the temperature compensated oscillation chip 32 via the conductive material in the first via hole 331. It is understood that the first electrode structure 34 may be a pad structure (e.g., a holder pad), and the insulating layer 33 is a resin material; the first electrode structure 34 includes a plurality of first electrodes (i.e., a plurality of pads), and the number of the first via holes 331 may correspond to the number of the first electrodes, so that the first electrodes may be electrically connected with the conductive material in the corresponding first via holes 331. As shown in fig. 3, in the present embodiment, the number of the first electrodes of the first electrode structure 34 is four, and the first electrodes are respectively disposed at four corners of the bottom of the temperature compensated crystal oscillator 30.
In this embodiment, the insulating layer 33 further has an insulating cavity 36, and the insulating cavity 36 is a sealed cavity, and a gas or vacuum, preferably a gas, such as air but not limited to air, is provided in the insulating cavity 36. The number of the heat insulation cavities 36 can be one or more, and can be specifically set according to actual needs. In other embodiments, the insulating cavity 36 may be a semi-closed cavity, that is, an open cavity or a hollowed-out area where the insulating cavity 36 communicates with the periphery of the temperature compensated crystal oscillator 30, such as at least one side, two opposite sides, or multiple sides of the insulating cavity 36 have openings that communicate with the periphery of the temperature compensated crystal oscillator 30.
In the temperature compensated crystal oscillator 30 provided in this embodiment, the temperature compensated oscillation chip 32 is directly disposed on one side of the encapsulated structure 312 of the encapsulated crystal resonator 31, and then the crystal resonator 31 and the temperature compensated oscillation chip 32 are sealed and protected by the insulating layer 33, so that a carrier substrate and a cavity thereof for encapsulating the crystal resonator 31 and the temperature compensated oscillation chip 32 are not required, the problem that the size of the temperature compensated crystal oscillator 30 is difficult to shrink due to the carrier substrate and the cavity thereof is avoided, and the encapsulation of the miniaturized temperature compensated crystal oscillator can be realized. In addition, the insulating layer 33 covers the temperature compensation oscillation chip 32, so that the temperature compensation oscillation chip 32 is not exposed, and the temperature compensation oscillation chip 32 can be better protected. In addition, the first electrode structure 34 is disposed on the insulating layer 33, and can cope with stress generated by a client application end of the temperature compensated crystal oscillator 30 placed on a circuit board, and has a buffering function, thereby improving reliability of the temperature compensated crystal oscillator 30 and the circuit board having the temperature compensated crystal oscillator 30.
Further, the thermal insulation cavity 36 in the insulating layer 33 can improve thermal resistance to delay thermal shock of an external heat source to the resonator, and has a better heat preservation effect, so that the temperature compensated crystal oscillator clock 30 oscillates more stably.
Specifically, the airtight package structure 312 may include a ceramic substrate 3121 having a cavity 3121a, a cover plate 3122 covering the ceramic substrate 3121, and a second electrode structure 3123 disposed on the ceramic substrate 3121, a conductor structure 3121b may be disposed in the ceramic substrate 3121, the vibration element 311 is disposed in the cavity 3121a and may be electrically connected to the conductor structure 3121b through a conductive adhesive 3121c (such as a conductive adhesive), the second electrode structure 3123 is further electrically connected to the conductor structure 3121b, and the second electrode structure 3123 is further electrically connected to the temperature-compensated oscillation chip 32 such that the temperature-compensated oscillation chip 32 is electrically connected to the crystal resonator 31. It is appreciated that the second electrode structure 3123 may be a pad structure, the second electrode structure 3123 may include a plurality of second electrodes (i.e., a plurality of pads), and the number of the conductor structures 3121b may correspond to the number of the second electrodes, such that the second electrodes may be electrically connected with the corresponding conductor structures 3121 b. The vibration element 311 is a crystal material.
Further, in this embodiment, the insulating layer 33 further has a second via 335, the second via 335 has a conductive material therein, and the second electrode structure 3123 may be electrically connected to the temperature compensated oscillation chip 32 through the conductive material in the second via 335.
In this embodiment, the insulating layer 33 may be deposited on one side of the temperature compensated oscillation chip 32 and the hermetic package structure 312 through a first semiconductor deposition process, the first via 331 may be formed in the insulating layer 33 through a semiconductor etching process, the conductive material may be formed in the first via 331 through a second semiconductor deposition process, and the first electrode structure 34 may be formed on the insulating layer 33 through a third semiconductor deposition process. It is understood that the semiconductor etching process may be performed by sequentially depositing a material to be etched and a photosensitive etchant and exposing the material to light in combination with a patterned mask (mask), thereby patterning the material layer to be etched.
Example two
Referring to fig. 6, fig. 6 is a cross-sectional view of a temperature compensated crystal oscillator 40 according to a second embodiment of the present application. The temperature compensated crystal oscillator 40 in the second embodiment is substantially the same as the temperature compensated crystal oscillator 30 in the first embodiment, that is, the description of the temperature compensated crystal oscillator 30 in the first embodiment can be basically applied to the temperature compensated crystal oscillator 40 in the second embodiment, and the difference between the temperature compensated crystal oscillator 40 in the second embodiment and the temperature compensated crystal oscillator 30 in the first embodiment will be mainly described below.
In the temperature compensated crystal oscillator 40 of the second embodiment, the first sealing member 4124, the second sealing member 4125 and the vibration element 411 are all made of crystal materials, that is, the crystal resonator 41 is a fully crystal packaged crystal resonator, and the package structure 412 includes the first sealing member 4124 disposed on one side of the vibration element 411, the second sealing member 4125 disposed on the other side of the vibration element 411, and the second electrode structure 4123 disposed on the first sealing member 4124. The second electrode structure 4123 is also electrically connected to the oscillation chip 42 via the conductive material in the second via 435.
Specifically, in the present embodiment, the temperature compensated oscillator chip 42 is disposed on the first sealing member 4124 and electrically connected to the second electrode structure 4123, and the insulating layer 43 covers the temperature compensated oscillator chip 42 and the first sealing member 4124.
In this embodiment, the insulating layer 43 further has an insulating cavity 46, and the insulating cavity 46 is a sealed cavity, and a gas or vacuum, preferably a gas, such as air but not limited to air, is provided in the insulating cavity 46. The number of the heat insulation cavities 46 can be one or more, and can be specifically set according to actual needs.
It will be appreciated that, basically the same as the first embodiment, the temperature compensating oscillation chip 42 is directly disposed on one side of the packaged structure 412 of the packaged crystal resonator 41, and then the insulating layer 43 is used to realize the sealing protection of the crystal resonator 41 and the temperature compensating oscillation chip 42, so that a carrier substrate and a cavity thereof for packaging the crystal resonator 41 and the temperature compensating oscillation chip 42 are not required, the problem that the size of the temperature compensating crystal oscillator 40 is difficult to shrink due to the carrier substrate and the cavity thereof is avoided, and the packaging of the miniaturized temperature compensating crystal oscillator can be realized. In addition, the insulating layer 43 covers the temperature-compensated oscillation chip 42, so that the temperature-compensated oscillation chip 42 is not exposed outside, and the temperature-compensated oscillation chip 42 can be better protected. In addition, the first electrode structure 44 is disposed on the insulating layer 43, and can cope with stress generated by a client application end of the temperature compensated crystal oscillator 40 placed on a circuit board, and has a buffering function, thereby improving reliability of the temperature compensated crystal oscillator 40 and the circuit board having the temperature compensated crystal oscillator 40.
Further, the thermal insulation cavity 46 in the insulating layer 43 can improve thermal resistance to delay thermal shock of an external heat source to the resonator, and has a better heat preservation effect, so that the temperature compensated crystal oscillator clock 40 oscillates more stably.
Example III
Referring to fig. 7 and 8, fig. 7 is a cross-sectional view of a temperature compensated crystal oscillator 50 according to a third embodiment of the present application, and fig. 8 is a bottom schematic diagram of the temperature compensated crystal oscillator 50 according to the third embodiment of the present application. The temperature compensated crystal oscillator 50 of the third embodiment is substantially the same as the temperature compensated crystal oscillator 30 of the first embodiment, that is, the description of the temperature compensated crystal oscillator 30 of the first embodiment described above is basically applicable to the temperature compensated crystal oscillator 50 of the third embodiment, and the differences between the temperature compensated crystal oscillator 50 of the third embodiment and the temperature compensated crystal oscillator 30 of the first embodiment will be mainly described below.
In the temperature compensated crystal oscillator 50, the insulating cavity 56 of the insulating layer 53 further comprises a semi-enclosed cavity 561, and in this embodiment, the semi-enclosed cavity 561 is a groove structure disposed around the periphery of the first electrode structure.
It will be appreciated that the semi-enclosed cavity 561 may better perform the technical effects of heat insulation and bottom heat dissipation, thereby improving the reliability of the temperature compensated crystal oscillator 50 and the circuit board having the temperature compensated crystal oscillator 50.
Example IV
Referring to fig. 3 to 9, fig. 9 is a flowchart of a method for manufacturing a temperature compensated crystal oscillator according to a fourth embodiment of the present application. The manufacturing method includes steps S71-S74.
In step S71, an oscillation chip is provided. As shown in fig. 3 to 9, the temperature compensated oscillator chip may be the oscillator chip 32, 42, 52 according to any one of the first to third embodiments.
In step S72, a crystal resonator is provided and is disposed on one side of the temperature compensated oscillation chip, the crystal resonator including a vibrating element and an airtight package structure packaged at the periphery of the vibrating element. Specifically, as shown in fig. 3 to 8, the crystal resonator is a ceramic-packaged crystal resonator or a fully-packaged crystal resonator, that is, the crystal resonators 31, 41, and 51 described in any one of the first to third embodiments, and will not be described herein.
And step S73, forming an insulating layer with a first through hole and a heat insulation cavity on at least one side of the temperature compensation oscillation chip and the airtight packaging structure, wherein the first through hole is provided with a conductive material, the heat insulation cavity comprises a sealed cavity and/or a semi-sealed cavity, and the heat insulation cavity is provided with gas or vacuum. It will be appreciated that the structure of the insulating layers 33, 43, 53, the first via holes 331, 431, 531 and the insulating cavities 36, 46, 56, and the conductive material of the first via holes 331, 431, 531 are described in detail in the first embodiment, and will not be described herein.
Step S74, forming a first electrode structure on the insulating layer, and electrically connecting the first electrode structure with the temperature compensated oscillation chip via the conductive material in the first via hole. It will be appreciated that the first electrode structures 34, 44, 54 are described in detail in the first embodiment, and will not be described in detail here.
Example five
Referring to fig. 10, fig. 10 is a block diagram of an electronic device 80 according to a fifth embodiment of the present application. The embodiment of the present application further provides an electronic device 80, where the electronic device 80 may be a portable electronic device such as a mobile phone, a tablet computer, a display, a notebook computer, a digital camera, but is not limited to the foregoing, and the electronic device 80 may include a circuit board 81, and the circuit board 81 is provided with the temperature compensated crystal oscillators 30, 40, 50 described in any one of the foregoing embodiments.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description. The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A temperature compensated crystal oscillator, the temperature compensated crystal oscillator comprising:
a crystal resonator including a vibrating element and an airtight package structure packaged at the periphery of the vibrating element;
a temperature compensation oscillation chip with a built-in temperature sensor is arranged at one side of the airtight packaging structure;
the insulating layer covers at least one side of the temperature compensation oscillation chip and the airtight packaging structure, the insulating layer is provided with a first through hole, a conductive material is arranged in the first through hole, the insulating layer is provided with a heat insulation cavity, the heat insulation cavity comprises a sealing cavity and/or a semi-sealing cavity, and gas or vacuum is arranged in the heat insulation cavity; and
the first electrode structure is arranged on the insulating layer and is electrically connected with the temperature compensation oscillation chip through the conductive material in the first conducting hole.
2. The temperature compensated crystal oscillator of claim 1, wherein the crystal resonator is a ceramic packaged crystal resonator, the hermetic package structure comprises a ceramic substrate having a cavity, a cover plate disposed over the ceramic substrate, and a second electrode structure disposed over the ceramic substrate, a conductor structure is disposed in the ceramic substrate, the vibrating element is disposed in the cavity and is connected to the ceramic substrate by an adhesive, and the second electrode structure is further electrically connected to the conductor structure and the temperature compensated oscillating chip.
3. The temperature compensated crystal oscillator of claim 1, wherein the crystal resonator is a fully crystal packaged crystal resonator, the hermetically sealed package structure comprises a first seal disposed on one side of the vibrating element, a second seal disposed on the other side of the vibrating element, and a second electrode structure disposed on the first seal, the vibrating element, and the second seal each comprise a crystal material, the second electrode structure is electrically connected to the temperature compensated oscillator chip, the temperature compensated oscillator chip is disposed on the first seal and is electrically connected to the second electrode structure, and the insulating layer covers the temperature compensated oscillator chip and the first seal.
4. A temperature compensated crystal oscillator according to claim 2 or 3, wherein the insulating layer further has a second via having a conductive material therein, the second electrode structure being electrically connected to the temperature compensated oscillation chip via the conductive material in the second via; the insulation layer is arranged on at least one side of the temperature compensation oscillation chip and the airtight packaging structure through a first semiconductor deposition process, the first via hole is formed in the insulation layer through a first semiconductor etching process, the conductive material in the first via hole is formed in the first via hole through a second semiconductor deposition process, and the first electrode structure is formed on the insulation layer through the second semiconductor deposition process or a third semiconductor deposition process; the second via hole is formed in the insulating layer through a second semiconductor etching process, the conductive material in the second via hole is formed in the second via hole through a fourth semiconductor deposition process, and the second electrode structure is formed on the first sealing member through the fourth semiconductor deposition process or a fifth semiconductor deposition process.
5. The temperature compensated crystal oscillator of claim 1, wherein the sealed cavity is filled with a gas, the gas is air, the sealed cavity is formed by etching a portion of the insulating layer to form a semi-enclosed cavity by a third semiconductor etching process, and further by covering an opening of the semi-enclosed cavity with another portion of the insulating layer.
6. The temperature compensated crystal oscillator of claim 1, wherein the thermally insulated cavity comprises the semi-enclosed cavity, the semi-enclosed cavity being a recessed structure disposed about a periphery of the first electrode structure.
7. A method of manufacturing a temperature compensated crystal oscillator, comprising:
providing a temperature compensation oscillation chip with a built-in temperature sensor;
providing a crystal resonator, and arranging the crystal resonator on one side of the temperature compensation oscillation chip, wherein the crystal resonator comprises a vibrating element and an airtight packaging structure which is packaged at the periphery of the vibrating element;
forming an insulating layer with a first via hole and a heat insulation cavity on at least one side of the temperature compensation oscillation chip and the airtight packaging structure, wherein a conductive material is arranged in the first via hole, the heat insulation cavity comprises a sealed cavity and/or a semi-sealed cavity, and gas or vacuum is arranged in the heat insulation cavity; and
a first electrode structure is formed on the insulating layer and is electrically connected with the temperature compensated oscillation chip via the conductive material in the first via hole.
8. The method of manufacturing a temperature compensated crystal oscillator according to claim 7, wherein the crystal resonator is a ceramic packaged crystal resonator, a full crystal packaged crystal resonator, the insulating layer is deposited on at least one side of the temperature compensated oscillation chip and the hermetic package structure by a first semiconductor deposition process, the first via is formed in the insulating layer by a semiconductor etching process, the conductive material in the first via is formed in the first via by a second semiconductor deposition process, and the first electrode structure is formed on the insulating layer by a third semiconductor deposition process.
9. The method of manufacturing a temperature compensated crystal oscillator according to claim 7, wherein the sealed cavity is filled with a gas, the gas is air, the sealed cavity is formed by etching a portion of the insulating layer through a third semiconductor etching process to form a semi-closed cavity, and further by covering an opening of the semi-closed cavity with another portion of the insulating layer.
10. An electronic device comprising a circuit board on which the temperature compensated crystal oscillator of any one of claims 1-6 is disposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311543288.2A CN117595824A (en) | 2023-11-20 | 2023-11-20 | Temperature compensation crystal oscillator, manufacturing method thereof and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311543288.2A CN117595824A (en) | 2023-11-20 | 2023-11-20 | Temperature compensation crystal oscillator, manufacturing method thereof and electronic equipment |
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| Publication Number | Publication Date |
|---|---|
| CN117595824A true CN117595824A (en) | 2024-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311543288.2A Pending CN117595824A (en) | 2023-11-20 | 2023-11-20 | Temperature compensation crystal oscillator, manufacturing method thereof and electronic equipment |
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| Country | Link |
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| CN (1) | CN117595824A (en) |
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2023
- 2023-11-20 CN CN202311543288.2A patent/CN117595824A/en active Pending
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