CN117410215B - Method for determining machine parameters, control method, control system and device thereof - Google Patents
Method for determining machine parameters, control method, control system and device thereof Download PDFInfo
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Abstract
The utility model relates to a machine parameter determining method, a control system and a device thereof, through obtaining a historical data set, the historical data set comprises a plurality of historical machine parameters and a plurality of historical wafer parameters, the universality of data acquisition is guaranteed, the deterioration parameter range corresponding to the machine parameters which deteriorate the wafer yield is determined according to the historical data set, the reason of the wafer yield deterioration is determined according to the deterioration parameter range, then a test data set is set according to the deterioration parameter range, the wafer test yield after the machine prepares the wafer according to the test data set is obtained, the target parameter set of the machine is determined according to the wafer test yield, the wafer is prepared by adopting the target parameter set as the machine parameter, the deterioration of the wafer yield during production and manufacture is improved, and the wafer yield is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a method for determining parameters of a machine, a control method, a control system, and a device thereof.
Background
The manufacturing accuracy of a chip is the accuracy of various aspects of the chip in manufacturing, such as the accuracy of photolithography, etching, deposition, etc., which directly determines the reliability of the chip in terms of functional performance, signal processing capability, power consumption or heat control, and interconnect performance.
With the continuous enhancement of the functions and performances of integrated circuit chips and the continuous reduction of the feature sizes of semiconductors, the requirements for manufacturing precision of the chips are higher and higher, so that the small change of a certain component in a machine will not affect the machine setting, but the yield or the electrical specification of the wafer manufactured by production will be periodically deteriorated, and therefore, how to improve the deterioration of the yield or the electrical specification of the wafer during the production is one of the problems to be solved in the present urgent need.
Disclosure of Invention
In view of the above, it is desirable to provide a method, a control system, and an apparatus for determining machine parameters, which can improve the deterioration of wafer yield and increase wafer yield in production and manufacturing.
In a first aspect, the present application provides a method for determining a machine parameter, where the method includes: acquiring a historical data set, wherein the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters; determining a deterioration parameter range corresponding to a machine parameter for deteriorating the wafer yield according to the historical data set; setting a test data set according to a deterioration parameter range corresponding to the machine parameter, wherein the test data set comprises a test parameter range corresponding to the machine parameter; obtaining a wafer test yield after the machine prepares the wafer according to the test data set; and determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises a target parameter range corresponding to the machine parameter.
In one embodiment, the historical machine parameters include a plurality of sub-machine parameters, and determining a range of degradation parameters corresponding to the machine parameters that degrade the wafer yield according to the historical dataset includes: determining Fu Gejing wafer parameter conditions for wafer yield according to a plurality of historical wafer parameters in the historical dataset; for each sub-tool parameter, screening deteriorated wafer parameters from the historical dataset that do not meet the wafer parameter conditions; wherein the wafer parameter condition is associated with a sub-tool parameter; and screening historical machine parameters corresponding to the deteriorated wafer parameters from the historical data set to obtain a deteriorated parameter range corresponding to the machine parameters for deteriorating the wafer yield.
In one embodiment, the machine includes a plurality of components; wherein, set up the test dataset according to the range of deteriorating parameter that the machine parameter corresponds, include: determining an abnormal part of the machine according to the deterioration parameter range; a test dataset is determined from the abnormal component.
In one embodiment, the machine parameters include radio frequency time; the deterioration parameter range comprises a radio frequency deterioration range of radio frequency time, and the abnormal part of the machine comprises an edge ring; wherein determining the test dataset from the abnormal component comprises: determining test parameters according to the abnormal parts, wherein the test parameters comprise radio frequency time and over-etching time; selecting a plurality of degradation sub-ranges from the radio frequency degradation range; configuring a plurality of over-etching times for each degradation subrange; the test data set comprises a plurality of test subsets, and each test subset comprises a degradation sub-range and an over etching time corresponding to the degradation sub-range.
In one embodiment, the method for obtaining wafer test yields after the wafer is prepared by the machine according to the test data set includes: the wafer test yield after the machine platform prepares the wafer according to each test subset in the test data set is obtained, wherein the wafer test yield comprises a plurality of sub-yields, and each test subset corresponds to one sub-yield respectively; determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises: acquiring target over-etching time corresponding to the maximum sub-yield for each deterioration sub-range; and acquiring a target parameter set according to the target over-etching time corresponding to each degradation sub-range, wherein the target parameter set comprises the degradation sub-range and the target over-etching time corresponding to the degradation sub-range.
In one embodiment, each subset of data further includes a historical wafer yield; before determining the range of the degradation parameter corresponding to the machine parameter for degrading the wafer yield according to the historical data set, the method further comprises: acquiring an abnormal sub-data set in the historical data set; wherein, the historical wafer yield in the abnormal subset data set is lower than a preset threshold; the abnormal sub-data set is cleaned.
In one embodiment, the method further comprises: the wafer yield of the wafer prepared by the machine according to the target parameter set is obtained; and under the condition that the wafer yield is lower than the theoretical threshold value, feeding back and adjusting the target parameter set until the wafer yield of the wafer prepared by the control system of the machine station parameters according to the adjusted target parameter set reaches the theoretical threshold value.
In a second aspect, the present application further provides a method for controlling a machine parameter, including: acquiring a target parameter set of a machine by adopting the method for determining the machine parameters in any one of the embodiments of the application; determining target parameters from the target parameter set according to the preparation process requirements; the control machine works according to the target parameters.
In a third aspect, the present application further provides a control system for a machine parameter, including: the machine is connected with the advanced process control system and the host computer and is used for preparing the wafer according to machine parameters; the host computer is used for acquiring a historical data set, determining a deterioration parameter range corresponding to a machine parameter for deteriorating the wafer yield according to the historical data set, setting a test data set according to the deterioration parameter range corresponding to the machine parameter, wherein the test data set comprises a test parameter range corresponding to the machine parameter, acquiring the wafer test yield after the machine prepares the wafer according to the test data set, and determining a target parameter set of the machine according to the wafer test yield; the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters; the target parameter set comprises a target parameter range corresponding to at least one machine parameter; and the advanced process control system is connected with the host and the machine and used for determining target parameters from the target parameter set according to the preparation process requirements and controlling the machine to work according to the target parameters.
In a fourth aspect, the present application further provides a device for controlling a machine parameter, where the device includes: the parameter acquisition module acquires a historical data set, wherein the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters; the model building module is used for determining a deterioration parameter range corresponding to a machine parameter for deteriorating the wafer yield according to the historical data set, setting a test data set according to the deterioration parameter range corresponding to the machine parameter, wherein the test data set comprises a test parameter range corresponding to the machine parameter, acquiring the wafer test yield after the machine prepares the wafer according to the test data set, and determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises at least one target parameter range corresponding to the machine parameter; and the parameter control module is used for determining target parameters from the target parameter set according to the preparation process requirements and controlling the machine to work according to the target parameters.
In a fifth aspect, the present application also provides a computer device comprising a memory and a processor, the memory having stored thereon a computer program executable on the processor, the processor implementing the steps of the method described in any of the embodiments of the present disclosure when the program is executed.
In a sixth aspect, the present application also provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the method described in any of the embodiments of the present disclosure.
The method for determining the machine parameters, the control method, the control system and the device thereof have the following unexpected effects:
according to the method, the control system and the device for determining the machine parameters, the universality of data acquisition is guaranteed by acquiring the historical data set comprising a plurality of historical machine parameters and a plurality of historical wafer parameters, the degradation parameter range corresponding to the machine parameters for degrading the wafer yield is determined according to the historical data set, the reason for degrading the wafer yield is determined according to the degradation parameter range, then the test data set comprising the test parameter range corresponding to the machine parameters is set according to the degradation parameter range, the wafer test yield of the machine after the wafer is prepared according to the test data set is acquired, and the target parameter set is used for preparing the wafer according to the wafer test yield, so that the corresponding degradation parameter range is acquired based on the historical data set, the universality and the accuracy of determining the degradation parameter range can be improved, the test data set for improving the wafer yield can be positioned efficiently and accurately based on the degradation parameter range, the target parameter set of the machine is determined based on the test data set, and the wafer yield can be improved when the wafer is manufactured, and the degradation yield of the wafer can be improved.
Drawings
FIG. 1 is a schematic diagram of an edge ring structure in an etching process according to one embodiment;
FIG. 2 is a schematic diagram of etched through holes of edge rings of different heights in an etching process in one embodiment;
FIG. 3 is a flowchart illustrating a method for determining a machine parameter according to an embodiment;
FIG. 4 is a flowchart illustrating a method for determining a machine parameter according to another embodiment;
FIG. 5 is a schematic workflow diagram of a control system for machine parameters in one embodiment;
FIG. 6 is a schematic diagram of a control system for machine parameters according to an embodiment;
FIG. 7 is a flowchart of another embodiment of a system for controlling machine parameters;
FIG. 8 is a data diagram of a historical dataset in one embodiment;
FIG. 9 is a data diagram of degradation parameter ranges in one embodiment;
FIG. 10 is a data diagram of a target parameter set in one embodiment;
FIG. 11 is a diagram showing the improvement of wafer yield in a control system for machine parameters according to one embodiment;
fig. 12 is a schematic structural diagram of a control device for machine parameters in an embodiment.
Reference numerals illustrate:
102. a wafer; 104. an edge ring; 202. a through hole; 204. a metal layer; 602. a machine table; 604. a host; 606. an advanced process control system; 1200. a control device for machine parameters; 1201. a parameter acquisition module; 1202. a model building module; 1203. and a parameter control module.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
Referring to fig. 1 and 2, during the etching process, the edge ring 104 provides electrical uniformity and plasma uniformity when the plasma etching apparatus etches the wafer 102, and during the operation of the machine, a high bias voltage is applied to the edge ring 104 to provide electrical uniformity and plasma uniformity to the edge ring 104, however, the high bias voltage causes the edge ring 104 to be rapidly eroded, thereby changing the height of the edge ring 104.
The vias 202 are hole-like structures in the chip that serve as connections between two metal layers 204, and the quality of the etching of the vias 202 directly affects the quality of the electrical connection between the different device layers. With the increasing demands of the functions and performances of the semiconductor devices and the decreasing feature sizes of the devices, the small changes of the heights of the edge rings 104 induce the through holes 202 between the two metal layers 204 of the semiconductor devices to shift during etching, which affects the performances of the semiconductor devices. In addition, since the change in the height of the edge ring 104 is difficult to monitor by the fault detection and classification system (Fault Detection and Classification, FDC), the FDC cannot perform a monitoring function to improve the yield.
In one embodiment, as shown in fig. 3, a method for determining a machine parameter is provided, including the following steps:
step S302: a historical dataset is obtained, wherein the historical dataset includes a plurality of data subsets, each data subset including historical platen parameters and historical wafer parameters.
The machine parameters are control parameters of different factors in the machine, such as etching time, temperature, humidity and the like. The wafer parameters are specification parameters of the wafer, such as film thickness, color cast, size and the like; by setting different machine parameters, wafers with different wafer parameters can be prepared.
The historical data set includes historical tool parameters for different times, different tools, different chambers, and historical wafer parameters for wafers prepared according to the historical tool parameters. Each historical machine parameter may have a corresponding historical wafer parameter, where the historical machine parameter and the corresponding historical wafer parameter may form a subset of data. The historical dataset may include a plurality of data subsets. In addition, the machine may be different machines for manufacturing the same process, and any machine includes a plurality of chambers, and the process performed by each chamber is the same process. For example, the apparatus may be a plasma etching apparatus, and when two chambers are included in one apparatus, one plasma etching apparatus may simultaneously etch two wafers at the same time.
As an example, historical wafer parameters for a plurality of tools, a plurality of chambers, and wafers prepared from the historical tool parameters may be obtained for a time period greater than three months, with the data subsets being divided into a plurality of data subsets according to time.
Step S304: and determining a deterioration parameter range corresponding to the machine parameters for deteriorating the wafer yield according to the historical data set.
The wafer yield is the ratio of the number of qualified chips tested after the process and the effective chips on the whole wafer, and the wafer yield is deteriorated to the yield that the ratio does not meet the manufacturing standard. Since the wafer yield is associated with historical wafer parameters, historical platen parameters, a range of degradation parameters can be determined from the degraded wafer yield and the historical data set. The degradation parameter range is a range of machine parameters for preparing wafers with degraded yield.
Step S306: and setting a test data set according to the deterioration parameter range corresponding to the machine parameter, wherein the test data set comprises the test parameter range corresponding to the machine parameter.
The test parameters may be machine parameters for testing, and the test parameter ranges are ranges of machine parameters for testing. According to the range of the machine parameters for preparing the wafer with deteriorated yield, the test parameters of the prepared wafer with no deterioration of the yield can be determined, and then the test data set is determined based on the range of the deterioration parameters, so that the test data set can be positioned for the purpose of improving the deterioration of the wafer yield efficiently and accurately.
Step S308: and obtaining the wafer test yield after the machine prepares the wafer according to the test data set.
The wafer test yield is the wafer yield of the wafer prepared by the machine according to the test data set. As an example, wafer yields for wafers prepared by different tools, different chambers, and according to the test data set may be obtained over a period of time.
Step S309: and determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises a target parameter range corresponding to the machine parameter.
The target parameter set is a machine parameter that the wafer yield of the prepared wafer meets the manufacturing standard. According to wafer yield of wafers prepared by different machine tables and different chambers according to the test data set, machine table parameters corresponding to the wafer yield meeting the standard can be determined, and then the target parameter set is obtained. In addition, since the machine parameters may include various parameter types, such as temperature parameters, humidity parameters, time parameters, etc., the target parameter set may include target parameter sets corresponding to a plurality of machine parameters.
In the above embodiment, the validity of data is improved by acquiring historical data sets of different machines and different chambers within at least three months, determining a degradation parameter range corresponding to a machine parameter for degrading the wafer yield according to the historical data sets, setting a test data set according to the degradation parameter range corresponding to the machine parameter, acquiring the wafer yield of the wafer prepared by the machine according to the test data set as a wafer test yield, determining corresponding test parameters according to the wafer test yield, taking the test parameter corresponding to the wafer test yield meeting the manufacturing standard as a target parameter set, and the wafer yield of the wafer prepared according to the target parameter set meets the manufacturing standard, thereby improving the degradation of the wafer yield in production and manufacturing.
In one embodiment, referring to fig. 4, determining a degradation parameter range corresponding to a machine parameter for degrading a wafer yield according to a historical data set includes:
step S412: wafer parameter conditions for Fu Gejing wafer yield are determined from a plurality of historical wafer parameters in the historical dataset.
As an example, the historical wafer yield of different time periods is obtained according to the historical wafer parameters, then the wafer yield average value of the historical wafer yields of all time periods is obtained, the historical wafer yield which is greater than or equal to the wafer yield average value is the wafer yield, and the wafer parameter conditions are determined according to the historical wafer parameters corresponding to the historical wafer yields reaching the wafer yield average value.
Step S414: for each sub-tool parameter, screening deteriorated wafer parameters from the historical dataset that do not meet the wafer parameter conditions; the wafer parameter condition is associated with a sub-station parameter.
The deteriorated wafer parameter is a historical wafer parameter corresponding to a wafer that does not conform to the wafer yield among the historical wafer yields. The historical machine parameters comprise a plurality of sub-machine parameters, and the sub-machine parameters can be different control parameters in the machine, such as parameters of control time and temperature in the machine. Different parameter segments can be divided for each sub-machine parameter, and historical wafer parameters are summarized according to the different parameter segments, so that deteriorated wafer parameters which do not meet wafer parameter conditions in the different parameter segments are determined.
Step S416: and screening historical machine parameters corresponding to the deteriorated wafer parameters from the historical data set to obtain a deteriorated parameter range corresponding to the machine parameters for deteriorating the wafer yield.
As an example, according to the deteriorated wafer parameters in the historical wafer parameters, determining the historical machine parameters corresponding to the prepared deteriorated wafer parameters, obtaining the parameter segments of the historical machine parameters corresponding to the deteriorated wafer parameters, and further obtaining the deteriorated parameter range.
In the above embodiment, the wafer yield average value of the historical wafer yield is determined according to the historical wafer parameters in the historical data set, then the wafer parameter condition is determined according to the historical wafer parameters corresponding to the historical wafer yield reaching the wafer yield average value, then different parameter sections are divided for each sub-machine parameter, the historical wafer parameters are summarized according to the different parameter sections, the historical wafer parameters corresponding to the wafer yield non-conforming to the wafer yield average value in each parameter section are the deteriorated wafer parameters, then the parameter sections of the historical machine parameters corresponding to the deteriorated wafer parameters are acquired, further the deteriorated parameter range is acquired, the historical machine parameters corresponding to the wafer yield not meeting the wafer yield average value are divided for different sub-machines, then the deteriorated parameter range is determined according to the historical machine parameters making the wafer yield deteriorated, thereby acquiring the deterioration rule of the wafer yield, facilitating the analysis of the reason of the wafer yield deterioration, and improving the accuracy of the subsequent set test data set. And the target parameters can comprise a plurality of machine parameters, so that the method for determining the machine parameters can simultaneously regulate and control the plurality of machine parameters, and compared with the method for improving the yield based on regulation and control of only one machine parameter in the common technology, the method considers the cross influence of different machine parameters on the wafer yield and improves the accuracy of wafer yield control.
In one embodiment, the historical machine parameters include radio frequency time, and determining a range of degradation parameters corresponding to the machine parameters that degrade wafer yield according to the historical dataset includes: according to a plurality of historical wafer parameters in the historical data set, determining Fu Gejing wafer parameter conditions of wafer yield, dividing time parameter segments according to radio frequency time, screening deteriorated wafer parameters which do not meet the wafer parameter conditions from the historical data set, and screening time parameter segments of historical machine parameters corresponding to the deteriorated wafer parameters from the historical data set to obtain a deteriorated parameter range corresponding to the machine parameters which deteriorate the wafer yield.
For example, the interval length of the time parameter segments may be 30H, the radio frequency time has an upper usage time limit, for example, when the upper time limit is 360H, the time parameter segments may be divided into 0H-30H, 30H-60H, 60H-90H, 90H-120H, 330H-360H, and the like, and then a summary average value of the historical wafer parameters under each time parameter segment is obtained, and in the case that the summary average value does not meet the wafer parameter condition, the machine parameters in the time parameter segment corresponding to the summary average value are determined to be the historical machine parameters corresponding to the degraded wafer parameters, so as to obtain the degraded parameter range.
In one embodiment, the machine may include a plurality of components. The machine components are parts in the machine, and illustratively, the various components may be electrostatic chucks, focus rings, gas distribution plates, and the like.
Setting a test data set according to a deterioration parameter range corresponding to the machine parameter, including: determining an abnormal part of the machine according to the deteriorated parameter range, and determining a test data set according to the abnormal part.
The abnormal member is a member that does not satisfy the member specification, and for example, the abnormal member is described as an edge ring. The edge ring is a machine part in the plasma etching machine, and the height of the edge ring can be changed along with the service time in the etching process, so that the plasma etching quality is affected. The method comprises the steps of obtaining monitoring data of a machine part in a time period corresponding to a deterioration parameter range, determining that the edge ring is worn according to the monitoring data of the machine part, determining that plasma uniformity in a cavity does not meet wafer preparation requirements according to data of the plasma uniformity in the deterioration parameter range, further determining that an abnormal part is the edge ring, and then determining a test data set according to the abnormal part.
In the above embodiment, the abnormal component in the machine is determined according to the deterioration parameter range and the monitoring data of the machine component, and the test data set is set according to the abnormal component, so that the accuracy and the rationality of the test data set setting are improved.
In one embodiment, for purposes of illustration, the machine parameter includes a radio frequency time, the degradation parameter range includes a radio frequency degradation range of the radio frequency time, and the abnormal part of the machine includes an edge ring. The radio frequency time is the working time of the radio frequency in the process of applying the radio frequency power to the plasma etching, and the radio frequency degradation range is the set of time parameter segments of the radio frequency time for the wafer yield degradation.
Specifically, determining a test dataset from an abnormal part, comprising: determining test parameters according to the abnormal component, wherein the test parameters comprise radio frequency time and over etching time, selecting a plurality of degradation sub-ranges from the radio frequency degradation range, and configuring a plurality of over etching times for each degradation sub-range; wherein the trial data set includes a plurality of trial subsets, each trial subset including a degradation subrange and an overetch time corresponding to the degradation subrange.
For example, when the abnormal component is an edge ring, the test parameters to be adjusted may be determined to be radio frequency time and over etching time, then a plurality of degradation sub-ranges are selected in a radio frequency degradation range, and a plurality of over etching times are configured for each degradation sub-range, for example, a degradation sub-range may be selected to be 0H-30H, and over etching times are respectively set for the degradation sub-ranges to be 50S, 55S, 60S, 65S, and 70S. Wherein the test data set comprises a plurality of test subsets, each test subset comprising a degradation subrange and an overetch time corresponding to the degradation subrange, e.g. one test subset when the degradation subrange is 0H-30H and the overetch time is 55S. In addition, the selection of the degradation sub-range and the over etching time in the present embodiment is merely an example, and in other embodiments, the above-described test parameters, degradation sub-range, and over etching time are not limited.
In the above embodiment, the affected machine parameters are determined according to the abnormal component to determine the test parameters, for example, the test parameters may be a radio frequency time and an over etching time, then a plurality of degradation sub-ranges are selected in a radio frequency degradation range, and a plurality of over etching times are configured for each degradation sub-range, which can be known that the smaller the interval between the degradation sub-range and the over etching time is, the more accurate the test data set is, so as to facilitate to improve the accuracy of the machine parameter determination, thereby improving the wafer yield.
In one embodiment, obtaining wafer test yields after the wafer is prepared by the machine according to the test dataset comprises: and obtaining the wafer test yield of the machine after preparing the wafer according to each test subset in the test data set. The wafer test yield prepared by the machine table according to the test subsets is a test sub-yield, and comprises a plurality of sub-yields, and each test subset corresponds to one sub-yield respectively.
Determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises: and obtaining target over-etching time corresponding to the maximum sub-yield for each degradation sub-range, and obtaining a target parameter set according to the target over-etching time corresponding to each degradation sub-range. Wherein the target parameter set includes a deteriorated sub-range and a target over-etch time corresponding to the deteriorated sub-range.
As an example, the obtaining machine prepares the sub-yield of the wafer according to each degradation sub-range and one over-etching time, each degradation sub-range includes a plurality of sub-yields, the maximum sub-yield of the plurality of sub-yields corresponding to each degradation sub-range is obtained, in the current degradation sub-range, the wafer yield prepared according to the over-etching time corresponding to the maximum sub-yield is the highest, the over-etching time corresponding to the maximum sub-yield is the target etching time, and the target over-etching time of each degradation sub-range is obtained to obtain the target parameter set.
In the above embodiment, the sub-yield of the wafer prepared by the machine according to each degradation sub-range and one over-etching time is obtained, and the over-etching time corresponding to the maximum sub-yield is obtained as the target etching time for each degradation sub-range, so as to obtain the optimal value of the over-etching time for each degradation sub-range, thereby improving the wafer yield in each degradation sub-range, further obtaining the target parameter set, and improving the wafer yield in production and manufacturing.
In one embodiment, each subset of data further includes historical wafer yields. Before determining the range of the degradation parameters corresponding to the machine parameters for degrading the wafer yield according to the historical data set, the method further comprises: and acquiring an abnormal sub-data set in the historical data set and cleaning the abnormal sub-data set.
Wherein, the historical wafer yield in the abnormal subset of data sets is below a preset threshold. The abnormal sub-data set can be abnormal fluctuation data, has specificity and comprises abnormal machine parameters, abnormal wafer parameters and abnormal wafer yield; the preset threshold is the fluctuation lower limit of the normal historical wafer yield. The average yield value can be determined according to the historical data set, and then a preset threshold value is obtained based on the average yield value, for example, when the average yield value is 90%, the preset threshold value can be 85%, the historical wafer yield rate which is greater than or equal to 85% is the normal yield rate, the yield rate which is less than 85% is the abnormal wafer yield rate, and abnormal sub-data corresponding to the abnormal wafer yield rate is cleaned. The value of the preset threshold is not particularly limited, and in other embodiments, the preset threshold may be set according to actual requirements.
In the above embodiment, before determining the deterioration parameter range according to the historical data set, the abnormal data set in the historical data set is acquired, and the abnormal data set is removed, so that the interference of the abnormal data set to the determination of the machine parameters is avoided, the reliability of the historical data set is improved, the accuracy of the target parameter range is further improved, and the wafer yield is improved.
In one embodiment, the method for determining the machine parameter further includes: and obtaining the wafer yield of the wafer prepared by the machine according to the target parameter set, and feeding back and adjusting the target parameter set under the condition that the wafer yield is lower than the theoretical threshold value until the wafer yield of the wafer prepared by the control system of the machine parameter according to the adjusted target parameter set reaches the theoretical threshold value.
The theoretical threshold is a target value of wafer yield, and can be set according to actual production requirements. And determining an improved parameter range according to the machine parameters corresponding to the wafer yield below the theoretical threshold value by acquiring the wafer yield of the wafer prepared by the machine according to the target parameter set, setting an improved data set according to the improved parameter range, and re-acquiring the wafer yield of the wafer prepared by the machine according to the improved data set until the wafer yield reaches the theoretical threshold value.
In the above embodiment, the wafer yield of the wafer is prepared by the machine according to the target parameter set, and then the target parameter set is feedback-adjusted under the condition that the wafer yield is lower than the theoretical threshold, so that the closed-loop control of the machine parameters is realized, the situation that the wafer yield does not meet the theoretical threshold in actual production and manufacturing is avoided, and the wafer yield is improved.
In one embodiment, the method for determining the machine parameter further includes: and determining a normal parameter range corresponding to the machine parameters with normal wafer yield according to the historical data set, selecting a plurality of normal sub-ranges from the normal parameter range, and acquiring the historical machine parameters corresponding to the maximum historical sub-yield for each normal sub-range to determine a target parameter set.
In the above embodiment, a normal parameter range with a normal yield is determined according to the historical data set, where the normal parameter range is a range of machine parameters corresponding to a wafer with a wafer yield reaching a theoretical threshold, a plurality of normal sub-ranges are selected in the normal range, and then a maximum historical sub-yield in each normal sub-range is obtained to obtain a historical machine parameter corresponding to the maximum historical sub-yield, so as to obtain a maximum value of the wafer yield of the wafer prepared in the normal parameter range, and improve the yield of the wafer prepared in the normal parameter range by the machine parameter.
The embodiment of the application also provides a control method of the machine parameters, which comprises the following steps: the method for determining the parameters of the machine in any embodiment of the application is adopted to obtain the target parameter set of the machine, the target parameters are determined from the target parameter set according to the preparation process requirements, and the machine is controlled to work according to the target parameters.
As an example, the target parameter set includes a radio frequency degradation range and a plurality of target over-etching times corresponding to the radio frequency degradation range, and in the manufacturing process, when the radio frequency time is 25H, the target over-etching time is 55S and belongs to the degradation sub-range of 0H-30H, so that the machine can be controlled to prepare the wafer according to the over-etching time of 55S, thereby improving the wafer yield in the radio frequency degradation range. In addition, the control parameters in the advanced process control system are corresponding to the target parameters in the target parameter set, so that the advanced process control system is convenient to control the machine parameters.
In the above embodiment, the advanced process control system may acquire the machine parameters in the process, then determine the target parameters to be controlled from the target parameter set according to the machine parameters, and control the machine to prepare the wafer according to the target parameters, thereby realizing intelligent control of the machine parameters in the production and manufacturing process, improving the yield of the produced and manufactured wafer, saving manpower and material resources while realizing multi-parameter control, and reducing economic cost.
It should be understood that, although the steps in the flowcharts related to the embodiments described above are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.
Referring to fig. 5 and 6, when the machine component is abnormal, the abnormal component affects the machine parameter, but because the influence of the abnormal component on the machine parameter is small, the FDC system cannot monitor the abnormality of the machine parameter, so that the yield cannot be improved by adjusting and controlling the machine parameter according to the wafer parameter, but the yield is related to the machine parameter, so that the advanced process control system 606 can control the machine parameter according to the yield, thereby improving the yield of the wafer. The invention provides a control system of machine parameters, which comprises: the device comprises a device 602, a host 604, and an advanced process control system 606, wherein the device 602, the host 604, and the advanced process control system 606 are connected with each other.
A platen 602 for preparing a wafer according to platen parameters.
The host 604 is configured to obtain a historical data set, determine a degradation parameter range corresponding to a machine parameter that degrades a wafer yield according to the historical data set, set a test data set according to the degradation parameter range corresponding to the machine parameter, where the test data set includes a test parameter range corresponding to the machine parameter, obtain a wafer test yield after the machine 602 prepares a wafer according to the test data set, and determine a target parameter set of the machine 602 according to the wafer test yield; the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters; the target parameter set comprises a target parameter range corresponding to at least one machine parameter.
The advanced process control system 606 is configured to determine target parameters from the target parameter set according to the manufacturing process requirements, and control the machine 602 to operate according to the target parameters.
In the above embodiment, the wafer is prepared by the machine 602 according to the machine parameters, then the host 604 obtains the historical data sets with universality of different machines and different chambers within a period of time, determines the range of the degradation parameter corresponding to the machine parameters for degrading the wafer yield according to the historical data sets, analyzes the degradation reason, sets the test data set according to the degradation parameter range, prepares the wafer according to the test data set by the machine 602, obtains the wafer test yield after the machine 602 prepares the wafer within a period of time, determines the target parameter set corresponding to the highest yield according to the wafer test yield, determines the target parameter from the target parameter set according to the preparation process requirement, controls the machine 602 to work according to the target parameter, ensures that the wafer yield of the prepared wafer meets the process requirement, realizes the accurate control of the machine parameter, and improves the wafer yield.
In one embodiment, the historical machine parameters include a plurality of sub-machine parameters, and the host determines a degradation parameter range corresponding to the machine parameters that degrade the wafer yield according to the historical dataset, including: determining Fu Gejing wafer parameter conditions for wafer yield according to a plurality of historical wafer parameters in the historical dataset; for each sub-tool parameter, screening deteriorated wafer parameters from the historical dataset that do not meet the wafer parameter conditions; wherein the wafer parameter condition is associated with a sub-tool parameter; and screening historical machine parameters corresponding to the deteriorated wafer parameters from the historical data set to obtain a deteriorated parameter range corresponding to the machine parameters for deteriorating the wafer yield.
In one embodiment, the machine includes a plurality of components; the host computer sets a test data set according to a deterioration parameter range corresponding to the machine parameter, and comprises: determining an abnormal part of the machine according to the deterioration parameter range; a test dataset is determined from the abnormal component.
In one embodiment, the machine parameters include radio frequency time; the deterioration parameter range comprises a radio frequency deterioration range of radio frequency time, and the abnormal part of the machine comprises an edge ring; wherein the host computer determines a test data set from the abnormal component, comprising: determining test parameters according to the abnormal parts, wherein the test parameters comprise radio frequency time and over-etching time; selecting a plurality of degradation sub-ranges from the radio frequency degradation range; configuring a plurality of over-etching times for each degradation subrange; the test data set comprises a plurality of test subsets, and each test subset comprises a degradation sub-range and an over etching time corresponding to the degradation sub-range.
In one embodiment, the host machine obtains wafer test yields after the wafer is prepared according to the test data set, including: the wafer test yield after the machine platform prepares the wafer according to each test subset in the test data set is obtained, wherein the wafer test yield comprises a plurality of sub-yields, and each test subset corresponds to one sub-yield respectively; determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises: acquiring target over-etching time corresponding to the maximum sub-yield for each deterioration sub-range; and acquiring a target parameter set according to the target over-etching time corresponding to each degradation sub-range, wherein the target parameter set comprises the degradation sub-range and the target over-etching time corresponding to the degradation sub-range.
In one embodiment, each subset of data further includes a historical wafer yield; before determining a degradation parameter range corresponding to a machine parameter for degrading the wafer yield according to the historical data set, the host computer further comprises: acquiring an abnormal sub-data set in the historical data set; wherein, the historical wafer yield in the abnormal subset data set is lower than a preset threshold; the abnormal sub-data set is cleaned.
In one embodiment, the control system further comprises: the wafer yield of the wafer prepared by the machine according to the target parameter set is obtained; and under the condition that the wafer yield is lower than the theoretical threshold value, feeding back and adjusting the target parameter set until the wafer yield of the wafer prepared by the control system of the machine station parameters according to the adjusted target parameter set reaches the theoretical threshold value.
In one embodiment, referring to fig. 7 to 11, a workflow of a control system for machine parameters includes:
step one: collecting data;
referring to fig. 8, historical data sets of different tools and different chambers are collected for at least three months, wherein the historical data sets include time lots, tool/chamber models, rf time, historical wafer yield, and a plurality of historical wafer parameters. In addition, less than 85% of the abnormal sub-data sets are cleaned.
Step two: determining machine parameters;
referring to fig. 9 and 10, the sub-machine parameters may be radio frequency time, the radio frequency time is divided into a plurality of time parameter segments at intervals of 30H, a summary average value of each historical wafer parameter in each time parameter segment is obtained, and under the condition that the summary average value does not conform to the wafer parameter condition, the machine parameters in the time parameter segment corresponding to the summary average value are determined to be historical machine parameters corresponding to the degraded wafer parameter, so as to obtain a degraded parameter range and a normal parameter range. Wherein, the deterioration parameter ranges from 0H to 60H, 330H to 360H, and the normal parameter ranges from 60H to 330H.
According to the deterioration parameter range, determining the abnormal part of the machine as an edge ring, further determining the test parameters as radio frequency time and over etching time, selecting 0H-30H, 30H-60H and 330H-360H as deterioration sub-ranges from the deterioration parameter range, configuring the over etching time for each deterioration sub-range as 50S, 55S, 60S, 65S and 70S, obtaining the wafer test yield after each test sub-set is prepared, determining the target over etching time corresponding to the maximum sub-yield of 0H-30H and 30H-60H as 55S and the target over etching time corresponding to 330H-360H as 65S, and further determining a target parameter set, wherein the target parameter set comprises the deterioration sub-range and the target over etching time corresponding to the deterioration sub-range.
Step three: controlling machine parameters; the target parameters in the machine parameters and the control parameters in the advanced process control system are mutually corresponding, so that the advanced process control system can conveniently control the machine parameters.
Step four: verifying a target parameter set;
referring to fig. 11, the control apparatus prepares a wafer according to a target parameter set, and collects data in at least three periods, and it can be known that after the control system for the apparatus parameters of the present application is used, the wafer yield and the wafer parameters in the rf degradation range are improved.
Based on the same inventive concept, the embodiment of the application also provides a device for controlling the machine parameters, which is used for realizing the above related method for controlling the machine parameters. The implementation of the solution provided by the device is similar to the implementation described in the above method, so the specific limitation in the embodiment of the control device for one or more machine parameters provided below may refer to the limitation of the control method for a machine parameter hereinabove, and will not be repeated herein.
In one embodiment, as shown in fig. 12, there is provided a control apparatus 1200 for machine parameters, including: a parameter acquisition module 1201, a model creation module 1202 and a parameter control module 1203, wherein:
The parameter obtaining module 1201 obtains a historical data set, wherein the historical data set comprises a plurality of data subsets, and each data subset comprises a historical machine parameter and a historical wafer parameter;
the model building module 1202 is configured to determine a degradation parameter range corresponding to a machine parameter for degrading a wafer yield according to a historical data set, set a test data set according to the degradation parameter range corresponding to the machine parameter, obtain a wafer test yield after the machine prepares the wafer according to the test data set, and determine a target parameter set of the machine according to the wafer test yield, where the target parameter set includes at least one target parameter range corresponding to the machine parameter;
the parameter control module 1203 is configured to determine a target parameter from the target parameter set according to the requirement of the preparation process, and control the machine to work according to the target parameter.
In the above embodiment, the parameter acquisition module 1201 acquires a historical data set, where the historical data set includes a plurality of historical machine parameters and historical wafer parameters, the model establishment module 1202 determines a range of degradation parameters corresponding to the machine parameters that degrade the wafer yield according to the historical data set acquired by the parameter acquisition module 1201, sets a test data set according to the range of degradation parameters, controls the machine to prepare a wafer according to the test data set and acquire a wafer test yield, and determines a target parameter set of the machine according to the wafer test yield, and during production, the parameter control module 1203 determines a target parameter from the target parameter set according to the preparation process requirement and controls the machine to work according to the target parameter, thereby realizing control of the machine parameters and improving the wafer yield.
In one embodiment, the historical machine parameters include a plurality of sub-machine parameters, and determining a range of degradation parameters corresponding to the machine parameters that degrade the wafer yield according to the historical dataset includes: determining Fu Gejing wafer parameter conditions for wafer yield according to a plurality of historical wafer parameters in the historical dataset; for each sub-tool parameter, screening deteriorated wafer parameters from the historical dataset that do not meet the wafer parameter conditions; wherein the wafer parameter condition is associated with a sub-tool parameter; and screening historical machine parameters corresponding to the deteriorated wafer parameters from the historical data set to obtain a deteriorated parameter range corresponding to the machine parameters for deteriorating the wafer yield.
In one embodiment, the machine includes a plurality of components; wherein, set up the test dataset according to the range of deteriorating parameter that the machine parameter corresponds, include: determining an abnormal part of the machine according to the deterioration parameter range; a test dataset is determined from the abnormal component.
In one embodiment, the machine parameters include radio frequency time; the deterioration parameter range comprises a radio frequency deterioration range of radio frequency time, and the abnormal part of the machine comprises an edge ring; wherein determining the test dataset from the abnormal component comprises: determining test parameters according to the abnormal parts, wherein the test parameters comprise radio frequency time and over-etching time; selecting a plurality of degradation sub-ranges from the radio frequency degradation range; configuring a plurality of over-etching times for each degradation subrange; the test data set comprises a plurality of test subsets, and each test subset comprises a degradation sub-range and an over etching time corresponding to the degradation sub-range.
In one embodiment, obtaining wafer test yields after the wafer is prepared by the machine according to the test dataset comprises: the wafer test yield after the machine platform prepares the wafer according to each test subset in the test data set is obtained, wherein the wafer test yield comprises a plurality of sub-yields, and each test subset corresponds to one sub-yield respectively; determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises: acquiring target over-etching time corresponding to the maximum sub-yield for each deterioration sub-range; and acquiring a target parameter set according to the target over-etching time corresponding to each degradation sub-range, wherein the target parameter set comprises the degradation sub-range and the target over-etching time corresponding to the degradation sub-range.
In one embodiment, each subset of data further includes a historical wafer yield; before determining a degradation parameter range corresponding to a machine parameter for degrading the wafer yield according to the historical data set, the control device further comprises: acquiring an abnormal sub-data set in the historical data set; wherein, the historical wafer yield in the abnormal subset data set is lower than a preset threshold; the abnormal sub-data set is cleaned.
In one embodiment, the control device further comprises: the wafer yield of the wafer prepared by the machine according to the target parameter set is obtained; and under the condition that the wafer yield is lower than the theoretical threshold value, feeding back and adjusting the target parameter set until the wafer yield of the wafer prepared by the control system of the machine station parameters according to the adjusted target parameter set reaches the theoretical threshold value.
All or part of the modules in the machine parameter control device can be realized by software, hardware and a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment of the present disclosure, a computer device is provided, comprising a memory and a processor, the memory having stored thereon a computer program executable on the processor, the processor implementing the steps of the method described in any of the embodiments of the present disclosure when the program is executed.
In one embodiment of the present disclosure, a computer-readable storage medium is provided, on which a computer program is stored which, when executed by a processor, implements the steps of the method described in any of the embodiments of the present disclosure.
The method for determining the machine parameters, the control method, the control system and the device thereof have the following unexpected effects:
according to the method, the control system and the device for determining the machine parameters, the universality of data acquisition is guaranteed by acquiring the historical data set comprising a plurality of historical machine parameters and a plurality of historical wafer parameters, the degradation parameter range corresponding to the machine parameters for degrading the wafer yield is determined according to the historical data set, the reason for degrading the wafer yield is determined according to the degradation parameter range, then the test data set comprising the test parameter range corresponding to the machine parameters is set according to the degradation parameter range, the wafer test yield after the machine is prepared according to the test data set is acquired, and the target parameter set is used as the machine parameters for preparing the wafer according to the target parameter set of the wafer test yield, so that the corresponding degradation parameter range is acquired based on the historical data set, the universality and the accuracy of determining the degradation parameter range can be improved, the test data set for improving the wafer yield can be positioned efficiently and accurately based on the degradation parameter range, and the target parameter set of the machine is determined based on the test data set, and the wafer yield can be improved when the wafer yield is produced.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application shall be subject to the appended claims.
Claims (12)
1. The method for determining the machine parameters is characterized in that the machine comprises a plurality of components; the method comprises the following steps:
acquiring a historical data set, wherein the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters;
determining a deterioration parameter range corresponding to a machine parameter for deteriorating the wafer yield according to the historical data set;
Determining an abnormal part of the machine according to the deterioration parameter range;
determining a test data set according to the abnormal component, wherein the test data set comprises a test parameter range corresponding to the machine parameter;
obtaining a wafer test yield after the machine prepares the wafer according to the test data set;
and determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises a target parameter range corresponding to the machine parameter.
2. The method of claim 1, wherein the historical tool parameters include a plurality of sub-tool parameters, determining a range of degradation parameters corresponding to tool parameters that degrade wafer yield from the historical dataset, comprising:
determining wafer parameter conditions of Fu Gejing wafer yield according to a plurality of the historical wafer parameters in the historical dataset;
screening deteriorated wafer parameters which do not meet the wafer parameter conditions from the historical data set according to each sub-machine parameter; wherein the wafer parameter condition is associated with the sub-station parameter;
and screening the historical machine parameters corresponding to the deteriorated wafer parameters from the historical data set to obtain the deteriorated parameter range corresponding to the machine parameters for deteriorating the wafer yield.
3. The method of claim 1, wherein the machine parameter comprises a radio frequency time; the degradation parameter range comprises a radio frequency degradation range of the radio frequency time, and the abnormal part of the machine comprises an edge ring; wherein said determining said test dataset from said abnormal component comprises:
determining test parameters according to the abnormal component, wherein the test parameters comprise the radio frequency time and the over-etching time;
selecting a plurality of degradation sub-ranges from the radio frequency degradation range;
configuring a plurality of over-etching times for each of the degradation sub-ranges; wherein said trial data set comprises a plurality of trial subsets, each of said trial subsets comprising one of said degradation subranges and one of said over-etch times corresponding to said degradation subranges.
4. The method of claim 3, wherein the obtaining the wafer test yield after the wafer is prepared by the machine according to the test dataset comprises:
the wafer test yield after the machine station prepares the wafer according to each test subset in the test data set is obtained, wherein the wafer test yield comprises a plurality of sub-yields, and each test subset corresponds to one sub-yield respectively;
The determining the target parameter set of the machine according to the wafer test yield comprises the following steps:
obtaining target over-etching time corresponding to the maximum sub-yield rate according to each degradation sub-range;
and acquiring the target parameter set according to the target over-etching time corresponding to each degradation sub-range, wherein the target parameter set comprises the degradation sub-range and the target over-etching time corresponding to the degradation sub-range.
5. The method of claim 1, wherein the historical dataset is obtained for a length of time greater than three months.
6. The method of any of claims 1-5, wherein each of the data subsets further comprises a historical wafer yield; before determining the range of the degradation parameter corresponding to the machine parameter for degrading the wafer yield according to the historical data set, the method further includes:
acquiring an abnormal sub-data set in the historical data set; wherein the historical wafer yield in the anomaly subset data set is below a preset threshold;
and cleaning the abnormal sub-data set.
7. The method according to any one of claims 1-5, further comprising:
Obtaining the wafer yield of the wafer prepared by the machine according to the target parameter set;
and under the condition that the wafer yield is lower than a theoretical threshold, feeding back and adjusting the target parameter set until the wafer yield of the wafer prepared by the control system of the machine parameter according to the adjusted target parameter set reaches the theoretical threshold.
8. The method for controlling the machine parameters is characterized by comprising the following steps:
acquiring the target parameter set of the machine by adopting the method for determining the machine parameters according to any one of claims 1-6;
determining target parameters from the target parameter set according to the preparation process requirements;
and controlling the machine to work according to the target parameters.
9. The control system of the machine parameter is characterized in that the machine comprises a plurality of components; comprising the following steps:
the machine is connected with the advanced process control system and the host computer and is used for preparing the wafer according to machine parameters;
the system comprises a host computer, a target parameter set, a test data set and a wafer test data set, wherein the host computer is used for acquiring a historical data set, determining a deterioration parameter range corresponding to a machine parameter for deteriorating the wafer yield according to the historical data set, determining an abnormal part of the machine according to the deterioration parameter range, determining the test data set according to the abnormal part, wherein the test data set comprises a test parameter range corresponding to the machine parameter, acquiring the wafer test yield after the machine prepares the wafer according to the test data set, and determining the target parameter set of the machine according to the wafer test yield; the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters; the target parameter set comprises at least one target parameter range corresponding to the machine parameter;
And the advanced process control system is connected with the host and the machine and used for determining target parameters from the target parameter set according to the preparation process requirements and controlling the machine to work according to the target parameters.
10. The control device of the machine parameters is characterized in that the machine comprises a plurality of components; the device comprises:
the parameter acquisition module acquires a historical data set, wherein the historical data set comprises a plurality of data subsets, and each data subset comprises historical machine parameters and historical wafer parameters;
the model building module is used for determining a deterioration parameter range corresponding to a machine parameter for deteriorating the wafer yield according to the historical data set, determining an abnormal part of the machine according to the deterioration parameter range, determining a test data set according to the abnormal part, wherein the test data set comprises a test parameter range corresponding to the machine parameter, acquiring the wafer test yield of the machine after the wafer is prepared according to the test data set, and determining a target parameter set of the machine according to the wafer test yield, wherein the target parameter set comprises at least one target parameter range corresponding to the machine parameter;
and the parameter control module is used for determining target parameters from the target parameter set according to the preparation process requirements and controlling the machine to work according to the target parameters.
11. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 8 when the computer program is executed.
12. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 8.
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| CN115032493A (en) * | 2022-07-15 | 2022-09-09 | 扬州晶新微电子有限公司 | Wafer testing method and system based on tube core parameter display |
| CN115332065A (en) * | 2022-07-15 | 2022-11-11 | 江苏鲁汶仪器有限公司 | Wafer uniformity optimization method for ICP (inductively coupled plasma) chamber |
| CN115206823A (en) * | 2022-07-28 | 2022-10-18 | 上海华力微电子有限公司 | Method and system for monitoring product interval influenced by machine abnormality |
| CN116108642A (en) * | 2022-12-27 | 2023-05-12 | 富联科技(晋城)有限公司 | Parameter debugging model training method, debugging method and equipment for machine |
| CN115965230A (en) * | 2023-01-03 | 2023-04-14 | 长鑫存储技术有限公司 | Wafer process yield analysis method, equipment and system |
| CN116339145A (en) * | 2023-03-24 | 2023-06-27 | 长鑫存储技术有限公司 | Machine parameter regulation and control method, equipment and storage medium |
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