CN117285822B - Thermal interface material and preparation method thereof - Google Patents
Thermal interface material and preparation method thereof Download PDFInfo
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- CN117285822B CN117285822B CN202310018513.4A CN202310018513A CN117285822B CN 117285822 B CN117285822 B CN 117285822B CN 202310018513 A CN202310018513 A CN 202310018513A CN 117285822 B CN117285822 B CN 117285822B
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- 239000000463 material Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 39
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- 238000002844 melting Methods 0.000 claims abstract description 22
- 230000008018 melting Effects 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract description 3
- 239000011148 porous material Substances 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 238000013329 compounding Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 150000002739 metals Chemical class 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 238000004321 preservation Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention belongs to the field of thermal management materials, and particularly relates to a thermal interface material and a preparation method thereof. A method for preparing a thermal interface material, comprising the steps of: preparing a low-melting-point metal alloy with a melting point of 0-30 ℃; pouring low-melting-point metal alloy into resin when in a liquid state to form a heat conduction channel; the composite material formed by the low-melting-point metal alloy and the resin is used as a thermal interface material for chip packaging, and the packaging is carried out according to specific requirements. The invention utilizes the volume change of the low-melting-point metal alloy during phase change, can connect and interrupt the heat conduction channel, further control the heat conductivity of the thermal interface material, and regulate and control the heat of the chip by the thermal interface material, thereby achieving the effects of high-temperature heat dissipation and low-temperature heat preservation and ensuring the chip to operate in a reasonable temperature range.
Description
Technical Field
The invention belongs to the technical field of thermal interface materials, and particularly relates to a thermal interface material and a preparation method thereof.
Background
For an integrated circuit, after the chip is packaged, heat generated by the chip is mainly dissipated through a radiator, the radiator is in solid-solid contact with the chip, a plurality of gaps are formed in the surface of the solid-solid contact for amplification, air is filled in the gaps, the heat conductivity of the air is low, and the heat cannot be fully transferred, so that the contact thermal resistance between the chip and the radiator is large, and the heat of the chip cannot be effectively transferred. At this time, thermal Interface Materials (TIMs) with high thermal conductivity are required for filling, and the TIMs can compensate for gaps between the chip and the heat sink, and between the heat sink and the heat sink, and transfer heat of the chip to the heat sink through the TIMs, and further transfer heat out through the heat sink. In fact, TIMs have become a bottleneck for heat dissipation of chips, so that the heat of chips can be regulated and controlled through TIMs.
Currently, most of the thermal interface materials play a role in heat dissipation, and researchers focus on how to further improve the heat conduction performance of TIMs. However, the proper operating temperature of the chip is in a range, and researches show that the optimal operating temperature of the chip is 15-40 ℃, and exceeding or falling below the temperature range can cause the efficiency of the chip to be reduced, the chip to be invalid and even damage to the chip. According to the test results, when the temperature exceeds the proper range, the failure rate of the chip will rise by 50% every 10 ℃ rise in temperature. Also, similar results can be produced for the chip when the environmental temperature is too low, and the failure rate of the chip is obviously increased in the low-temperature environment. Chinese patent CN101899288B proposes a thermal interface material prepared by compounding a carbon nanotube array and a low-melting point metal alloy, which mainly plays the advantage of high thermal conductivity of the carbon nanotube axis, and prepares a thermal interface material with high thermal conductivity, but the thermal interface material mainly plays a role in heat dissipation, and cannot play a role in low-temperature heat preservation. Chinese patent CN104218010B discloses a metal thermal interface material, which is a low-melting metal alloy and a high-melting metal compound to obtain a high-melting metal alloy thermal interface material with good contact with an electronic device, so that the problem of overflow is solved, and in general, the thermal interface material also mainly plays a role in heat dissipation. Therefore, if TIMs can play roles in heat dissipation at high temperature and heat preservation at low temperature, then the TIMs can really play an effective role in heat management on the chip and further on the integrated circuit, and have important significance in prolonging the service life of the chip.
Disclosure of Invention
Based on the purpose, the invention provides a thermal interface material capable of achieving the effects of high-temperature heat dissipation and low-temperature heat preservation and a preparation method thereof.
In order to solve the problems set forth in the background art, the invention provides a preparation method of a thermal interface material, which comprises the following steps:
A method for preparing a thermal interface material, comprising the steps of:
(1) Preparing a low-melting-point metal alloy with a melting point of 0-30 ℃;
(2) Pouring low-melting-point metal alloy into resin when in a liquid state to form a heat conduction channel;
(3) The composite material formed by the low-melting-point metal alloy and the resin is used as a thermal interface material for chip packaging, and the packaging is carried out according to specific requirements.
The low-melting-point metal alloy is formed by compounding two or more of gallium, indium, tin and zinc; the proportion of each metal element in the alloy varies according to the melting point of the alloy.
Preferably, the low melting point metal alloy has a thermal conductivity greater than 20W/mK; the viscosity of the low-melting-point metal alloy is 2-5000 mPa & s.
Preferably, the resin is an epoxy resin or a silicone resin.
The step of forming the heat conducting channel is to form a pore canal in the resin matrix in advance (as shown in fig. 1), and then pour the low-melting-point metal alloy into the pore canal when in a liquid state, so as to fill the pore canal.
Preferably, the epoxy resin is mainly bisphenol A type epoxy resin, and E51 is mainly.
Preferably, the organic silicon resin refers to silicone oil, silicone grease and the like, and mainly comprises polydimethylsiloxane.
The package structure is shown in fig. 2.
The invention provides a thermal interface material, which comprises matrix resin and a heat conduction network formed by low-melting-point metal alloy; the volume change caused by the phase change of the low-melting-point metal alloy is utilized to control the communication and interruption of the heat conduction network, so as to control the heat conductivity of the thermal interface material, thereby playing roles in high-temperature heat dissipation and low-temperature heat preservation of the chip.
In order to avoid that a thin metal oxide layer may be formed on the surface after the low-melting-point metal alloy is contacted with air, thereby affecting the heat conductivity of the metal alloy, the long-time contact with air should be avoided as much as possible during the preparation and use of the low-melting-point metal alloy, or the oxide layer possibly occurring on the surface of the low-melting-point metal alloy may be removed before packaging.
The invention combines the technical improvement and the process, and has the following advantages compared with the prior art:
The method comprises the following steps: the invention mainly uses the change of volume of low-melting point metal alloy to change the heat conduction property of thermal interface material when phase change occurs, and is specifically expressed in: when the temperature of the chip is increased to the melting point of the low-melting-point metal alloy, the alloy undergoes solid-liquid phase change to become liquid, and the pores of the matrix resin are filled to form a heat conduction channel; because the heat conductivity coefficient of the low-melting-point metal alloy is relatively high, heat can be effectively led out, and therefore the chip is subjected to high-temperature heat dissipation. When the temperature of the external environment is lower, the heat is dissipated to cause the temperature of the chip to gradually decrease, when the temperature is reduced to the melting point of the low-melting-point metal alloy, the liquid-solid phase change occurs, the metal alloy is changed from a liquid state to a solid state, the volume is contracted, the pores of the matrix resin cannot be completely filled, the heat conduction channel is interrupted, and at the moment, the TIMs cannot effectively transfer heat due to low heat conduction coefficient, so that the low-temperature heat preservation effect is realized.
And two,: the invention combines the packaging technology, not only can effectively utilize the characteristics of high heat conductivity, volume change caused by phase change and the like of the low-melting-point metal alloy, but also can avoid the leakage problem possibly occurring when the metal alloy is in a liquid state, so that the whole TIMs can truly play a role in the heat management of the chip, thereby ensuring the chip to operate in a reasonable temperature range.
Drawings
The invention is further explained below with reference to the drawings and examples:
FIG. 1 is a schematic perspective view of a heat conducting channel formed in a matrix resin of the present invention;
fig. 2 is a schematic diagram of a package structure of the thermal interface material of the present invention in a chip package.
Detailed Description
The following detailed description of the present invention clearly and fully describes the technical solutions of the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
mixing gallium and indium according to the mass ratio of 75.5:24.5, heating, stirring and melting to obtain gallium-indium alloy, and testing to obtain the gallium-indium alloy, wherein the melting point of the alloy is 16 ℃, the viscosity is 2 mPas and the thermal conductivity is 26.3W/mK. Taking polydimethylsiloxane as matrix resin, forming a pore canal as shown in figure 1, filling the pore canal of the matrix resin with the alloy in liquid state to obtain TIMs composed of low-melting-point metal alloy and resin, and testing to obtain the TIMs with thermal conductivity of 3.2W/mK. Then, the package was performed in the structure shown in fig. 2, and the operation temperature of the chip was tested at various ambient temperatures.
Embodiment two:
Mixing gallium, indium and tin according to the mass ratio of 30:10:60, heating, stirring and melting to obtain gallium-indium-tin alloy, and testing to obtain the gallium-indium-tin alloy with the melting point of 12 ℃, the viscosity of 100 mPas and the thermal conductivity of 25.6W/mK. And (3) taking epoxy resin with proper viscosity as matrix resin, forming a pore canal as shown in figure 1, filling the pore canal of the matrix resin with the alloy in a liquid state to obtain TIMs formed by low-melting-point metal alloy and resin, and testing to obtain the TIMs with the thermal conductivity of 3.1W/mK. Then, the package was performed in the structure shown in fig. 2, and the operation temperature of the chip was tested at various ambient temperatures.
Embodiment III:
mixing gallium, indium, tin and zinc according to the mass ratio of 61:25:13:1, heating, stirring and melting to obtain gallium indium tin zinc alloy, wherein the alloy has a melting point of 0 ℃ and a viscosity of 5000mPa & s and a thermal conductivity of 36.9W/mK according to tests. Epoxy resin with proper viscosity is used as matrix resin, pore canal as shown in figure 1 is formed in the matrix resin, the pore canal of the matrix resin is filled with the alloy in liquid state, and TIMs formed by low-melting-point metal alloy and resin are obtained, and the TIMs have thermal conductivity of 4.5W/mK after test. Then, the package was performed in the structure shown in fig. 2, and the operation temperature of the chip was tested at various ambient temperatures.
Embodiment four:
Mixing gallium and zinc according to the mass ratio of 90:10, heating, stirring and melting to obtain gallium indium tin zinc alloy, wherein the alloy has the melting point of 30 ℃, the viscosity of 1000 mPas and the thermal conductivity of 29.5W/mK. Taking polydimethylsiloxane as matrix resin, forming a pore canal as shown in figure 1, pouring the alloy into the pore canal of the matrix resin when in liquid state to obtain TIMs composed of low-melting-point metal alloy and resin, and testing to obtain the TIMs with thermal conductivity of 3.4W/mK. Then, the package was performed in the structure shown in fig. 2, and the operation temperature of the chip was tested at various ambient temperatures.
Comparative example one:
The commercially available heat conducting silicone grease is used as a thermal interface material (the heat conductivity is 5W/mK), is packaged between the chip and the radiator, fills a gap between the chip and the radiator, and tests the operating temperature condition of the chip under different environment temperatures.
The melting point of the low melting point metal alloy in the examples was obtained by a differential scanning calorimeter (DSC 6000 PE) test, the viscosity of the alloy was obtained by a rotational viscometer (MSK-SFM-VT 8S) test, the thermal conductivity was obtained by a thermal conductivity tester (DRL-3) test, and the device operating temperatures in the examples and comparative examples were obtained by a thermal infrared imager (FLIR T865) test. The relevant test data are listed in table 1.
TABLE 1 examples 1-4 and comparative example 1 operating temperatures of chips at different ambient temperatures
As can be seen from table 1, compared with the comparative example, which only has the heat dissipation function at high temperature, the thermal interface material obtained by the preparation method provided by the invention not only has the heat dissipation function on the chip at high temperature, but also has the heat preservation function on the chip at low ambient temperature, so that the operating temperature of the chip is kept in a relatively proper range, thereby being beneficial to exerting the working efficiency of the chip and prolonging the service life.
Claims (6)
1. A method for preparing a thermal interface material, comprising the steps of:
(1) Preparing a low-melting-point metal alloy with a melting point of 0-30 ℃;
(2) Pouring low-melting-point metal alloy into resin when in a liquid state to form a heat conduction channel;
(3) Packaging a thermal interface material for chip packaging by using a composite material formed by low-melting-point metal alloy and resin;
The step of forming the heat conducting channel is to form a pore canal in the resin matrix in advance, wherein the pore canal is shown in figure 1, and then the low-melting-point metal alloy is poured into the pore canal when in a liquid state, so that the pore canal is filled.
2. The method of manufacture of claim 1, wherein: the low-melting-point metal alloy is formed by compounding more than two metals of gallium, indium, tin and zinc.
3. The method of manufacture of claim 1, wherein: the heat conductivity coefficient of the low-melting-point metal alloy is more than 20W/mK; the viscosity of the low-melting-point metal alloy is 2-5000 mPa & s.
4. The method of manufacture of claim 1, wherein: the resin is epoxy resin and organic silicon resin.
5. The method of claim 4, wherein: the epoxy resin is bisphenol A type epoxy resin.
6. The method of manufacture of claim 1, wherein: the structure of the package is shown in fig. 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310018513.4A CN117285822B (en) | 2023-01-06 | 2023-01-06 | Thermal interface material and preparation method thereof |
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| CN202310018513.4A CN117285822B (en) | 2023-01-06 | 2023-01-06 | Thermal interface material and preparation method thereof |
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| CN117285822A CN117285822A (en) | 2023-12-26 |
| CN117285822B true CN117285822B (en) | 2024-11-01 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106675529A (en) * | 2016-12-13 | 2017-05-17 | 中电普瑞电力工程有限公司 | Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6797758B2 (en) * | 2000-04-05 | 2004-09-28 | The Bergquist Company | Morphing fillers and thermal interface materials |
| CN113201660B (en) * | 2021-04-28 | 2021-11-23 | 东北大学 | Nano porous copper liquid metal composite thermal interface material and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106675529A (en) * | 2016-12-13 | 2017-05-17 | 中电普瑞电力工程有限公司 | Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy |
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| CN117285822A (en) | 2023-12-26 |
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