CN117253790B - IGBT device manufacturing method and IGBT device - Google Patents
IGBT device manufacturing method and IGBT device Download PDFInfo
- Publication number
- CN117253790B CN117253790B CN202311532215.3A CN202311532215A CN117253790B CN 117253790 B CN117253790 B CN 117253790B CN 202311532215 A CN202311532215 A CN 202311532215A CN 117253790 B CN117253790 B CN 117253790B
- Authority
- CN
- China
- Prior art keywords
- wafer
- hydrogen
- igbt device
- igbt
- containing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 81
- 230000008569 process Effects 0.000 claims abstract description 60
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 54
- 239000001257 hydrogen Substances 0.000 claims abstract description 54
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000005669 field effect Effects 0.000 claims abstract description 10
- -1 hydrogen ions Chemical class 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 30
- 230000007547 defect Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 51
- 238000000926 separation method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to a manufacturing method of an IGBT device and the IGBT device, wherein the manufacturing method of the IGBT device comprises the following steps: providing a first wafer for manufacturing an IGBT device; performing an IGBT front-side process on the front-side of the first wafer to form a metal-oxide-semiconductor field effect transistor on the front-side of the first wafer; providing a second wafer; implanting hydrogen ions into the front surface of the second wafer to form a hydrogen-containing layer in the second wafer; bonding the front side of the first wafer and the front side of the second wafer together in opposition to connect the first wafer and the second wafer together to form a wafer assembly; performing an IGBT back process on the back of the first wafer in the wafer combination; the second wafer is broken at the hydrogen-containing layer by an annealing process to remove a portion of the second wafer between the hydrogen-containing layer and the backside of the second wafer. The method does not need to customize a sheet machine for thinning, can save the cost of the machine, is not easy to generate defects such as broken sheets and the like, and improves the stability of the process.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a manufacturing method of an IGBT device and the IGBT device.
Background
In recent years, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviated as "IGBT") technology has been developed rapidly, and has become one of the most important high-power main current devices in the field of power electronics. The earliest IGBT species were of the punch through type (abbreviated as "PT") and non-punch through type (abbreviated as "NPT"). In recent years, an IGBT of a Field Stop (FS) structure has been developed, in which the FS region is an N-type doped region, and the FS region has a higher doping concentration than the N-region in the IGBT, and the effect is to rapidly reduce the electric Field strength at high voltage in the layer to achieve electric Field termination. The FS IGBT has low conduction voltage drop or conduction loss, and the conduction voltage drop temperature coefficient is positive, so that the high-power parallel connection is convenient.
At present, the most common method for manufacturing the FS type IGBT device is as follows: the MOSFET device is first fabricated on the front side of the silicon substrate and then the portion of the silicon substrate that remains in the fabrication of the MOSFET is removed from the back side of the silicon wafer by grinding. The purpose of grinding part of the silicon substrate is to make the thickness of the final silicon wafer reach the design required value, and to obtain ideal breakdown voltage, switching characteristics and the like. Then, N-type and P-type impurities are implanted from the back surface of the silicon wafer by an ion implanter, and the implanted impurities are activated by thermal annealing or laser annealing to form an FS region and a collector region (P-type region).
However, since the IGBT wafer itself is thin, the existing lapping process needs to use a specially tailored wafer machine to lap the back surface of the IGBT wafer, which is costly, and in the back surface wafer process, defects such as chipping are easily generated, so that the process stability is poor, and the yield of the product is affected.
Disclosure of Invention
Aiming at least one defect in the related art, the invention provides a manufacturing method of an IGBT device and the IGBT device, and when the back surface of the IGBT device is thinned, a thin sheet machine is not required to be customized for thinning, so that the machine cost can be saved, the defects of broken sheets and the like are not easy to occur, and the process stability is improved.
The first aspect of the present application provides a method for manufacturing an IGBT device, including the following steps:
providing a first wafer for manufacturing an IGBT device;
performing an IGBT front-side process on the front-side of the first wafer to form a metal-oxide-semiconductor field effect transistor on the front-side of the first wafer;
providing a second wafer;
implanting hydrogen ions into the front surface of the second wafer to form a hydrogen-containing layer in the second wafer;
bonding the front side of the first wafer and the front side of the second wafer together in opposition to connect the first wafer and the second wafer together to form a wafer assembly;
performing an IGBT back process on the back of the first wafer in the wafer combination;
the second wafer is broken at the hydrogen-containing layer by an annealing process to remove a portion of the second wafer between the hydrogen-containing layer and the backside of the second wafer.
In some embodiments of the first aspect of the present application, the first wafer and the second wafer are bonded by direct bonding, fusion bonding, or hydrophobic bonding.
In some embodiments of the first aspect of the present application, the IGBT backside process includes: and thinning the back surface, implanting N-type impurities required for forming a field stop region, implanting P-type impurities required for forming a collector region and performing low-temperature annealing.
In some embodiments of the first aspect of the present application, the implanted N-type impurity comprises at least one of phosphorus, arsenic, hydrogen; the implanted P-type impurity includes at least one of boron, boron difluoride, and indium.
In some embodiments of the first aspect of the present application, the method further comprises a back side metallization step in which the back side of the first wafer, where the field stop region and the collector region have been formed, is metallized, the metallization step being performed before or after breaking the hydrogen containing layer of the second wafer.
In some embodiments of the first aspect of the present application, the thickness of the second wafer is 50-800 μm.
In some embodiments of the first aspect of the present application, after forming the hydrogen-containing layer in the second wafer, the method further includes a step of etching the front surface of the second wafer to a depth greater than the depth of the hydrogen-containing layer to expose the silicon layer under the hydrogen-containing layer.
In some embodiments of the first aspect of the present application, the step of etching the front side of the second wafer is preceded by a step of surface passivating the front side of the second wafer to form a hard mask on the front side of the second wafer.
A second aspect of the present application provides an IGBT device fabricated according to the method for fabricating an IGBT device of any one of the above.
In some embodiments of the second aspect of the present application, the IGBT device includes:
a first wafer having a front side and a back side;
a metal-oxide-semiconductor field effect transistor formed on the front side of the first wafer;
a hydrogen-containing layer formed over the metal-oxide-semiconductor field effect transistor;
a field stop region, a collector region, and a metal layer formed on the back surface of the first wafer.
Compared with the prior art, the invention has the advantages and positive effects that:
(1) According to the manufacturing method of the IGBT device, the first wafer for manufacturing the IGBT wafer and the second wafer serving as the bearing wafer are bonded together before the back surface process of the IGBT is carried out, when the thinning process is carried out, a thin sheet machine is not required to be specially customized for thinning, the machine cost can be saved, and when the thinning process is carried out, defects such as broken pieces are not easy to occur, and the stability of the back surface process can be improved;
(2) According to the manufacturing method of the IGBT device, which is provided by at least one embodiment, the second wafer serving as the bearing wafer is subjected to hydrogen injection to form the hydrogen-containing layer, and the second wafer and the first wafer can be easily separated by means of a subsequent annealing process, so that additional equipment is not needed for separation, and the cost is saved;
(3) According to the IGBT device provided by at least one embodiment of the application, the thickness of the IGBT device can be thinner, the thickness of a chip of a large-size IGBT device can be thinned to be less than 100 mu m, and the heat dissipation problem of a high-power device is effectively solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
fig. 1 is a flowchart of a method for manufacturing an IGBT device according to an embodiment of the present disclosure;
fig. 2 is a flowchart of a back side process and back side metallization in a method for fabricating an IGBT device according to an embodiment of the present disclosure;
fig. 3 is a flowchart of a back side process and back side metallization in a method for fabricating an IGBT device according to another embodiment of the present disclosure;
fig. 4 a-4 f are cross-sectional views of a device at various steps in one embodiment of a method for fabricating an IGBT device according to the present application;
fig. 5a to 5d are cross-sectional views of a second wafer processed according to an embodiment of a method for fabricating an IGBT device provided in the present application;
fig. 6a to 6f are cross-sectional views of a device in steps of another embodiment of a method for fabricating an IGBT device according to the present application.
In the figure:
100. a first wafer; 100a, the front side of the first wafer; 100b, the back surface of the first wafer; 101. a MOSFET; 102. an FS zone; 103. a P-type region; 104. a metal layer; 200. a second wafer; 200a, the front side of the second wafer; 200b, the back surface of the second wafer; 201. a hydrogen-containing layer; 202. a hard mask.
Detailed Description
The technical solutions in the embodiments will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It is apparent that the drawings in the following description are only some examples or embodiments of the present application, and it is possible for those of ordinary skill in the art to apply the present application to other similar situations according to these drawings without inventive effort. Moreover, it should be appreciated that while such a development effort might be complex and lengthy, it would nevertheless be a routine undertaking of design, fabrication, or manufacture for those of ordinary skill having the benefit of this disclosure, and thus should not be construed as having the benefit of this disclosure.
Reference in the specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is to be expressly and implicitly understood by those of ordinary skill in the art that the embodiments described herein can be combined with other embodiments without conflict. The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.
It is to be understood that, although the figures may show a particular order of method steps, the order of the steps may differ from what is depicted. Furthermore, two or more steps may be performed simultaneously or partially simultaneously. All such variations are within the scope of the present disclosure. It will be appreciated that in the above method, only the steps relevant to the improvement of the present application are shown, not all the steps, and thus, the steps are not seamlessly joined, and other necessary steps may be interposed between the two steps as required.
A first aspect of an embodiment of the present application proposes a method for manufacturing an IGBT device, as shown in fig. 1, including the following steps:
s1: providing a first wafer for manufacturing an IGBT device;
s2: performing an IGBT front-side process on the front-side of the first wafer to form a metal-oxide-semiconductor field effect transistor on the front-side of the first wafer;
s3: providing a second wafer;
s4: implanting hydrogen ions into the front surface of the second wafer to form a hydrogen-containing layer in the second wafer;
s5: bonding the front side of the first wafer and the front side of the second wafer together in opposition to connect the first wafer and the second wafer together to form a wafer assembly;
s6: performing an IGBT back process on the back of the first wafer in the wafer combination;
s7: the second wafer is broken at the hydrogen-containing layer by an annealing process to remove a portion of the second wafer between the hydrogen-containing layer and the backside of the second wafer.
According to the manufacturing method of the IGBT device, the first wafer used for manufacturing the IGBT wafer and the second wafer serving as the bearing wafer are bonded together to form the wafer combination before the back surface process of the IGBT is carried out, when the thinning process is carried out, a special ordering sheet machine is not needed for thinning, the machine cost can be saved, and when the thinning process is carried out, the second wafer is used as the bearing wafer to support the first wafer, defects such as broken sheets are not easy to occur, the stability of the back surface process (such as ion implantation, annealing and the like) can be improved, the thickness of the IGBT device can be thinner, the thickness of a chip of the large-size IGBT device can be thinned to be less than 100 mu m, and the heat dissipation problem of the high-power device is effectively solved. After the IGBT back-side process is completed, the separation of at least one part of the second wafer from the first wafer is realized by means of the hydrogen-containing layer formed in the second wafer in advance, and a simple and easy method is provided for separating the bearing wafer.
As shown in fig. 4a, in step S1, a first wafer 100 for fabricating IGBT devices is provided, the first wafer 100 comprising a front side 100a and a back side 100b. The first wafer 100 may be a bulk silicon Substrate (SOI) substrate, alternatively a semiconductor-on-insulator (SOI) substrate, a silicon-germanium-on-insulator (SGOI) substrate, or a germanium-on-insulator (GOI) substrate.
Referring further to fig. 4a, in step S2, an IGBT front side process is performed on the front side 100a of the first wafer 100, thereby forming a Metal-Oxide-semiconductor field effect transistor (MOSFET) 101 on the front side of the IGBT. The front side process of the IGBT (i.e. the process of forming a MOSFET on the front side 100a of the wafer) is a known method. For example, an interlayer dielectric layer is formed on the front surface 100a of the first wafer 100, and a gate trench is formed in the interlayer dielectric layer; forming a gate dielectric layer within the gate trench; forming a gate electrode on the gate dielectric layer; and then carrying out a planarization manufacturing process to remove the gate dielectric layer material and the gate electrode material on the interlayer dielectric layer. In order to adjust the threshold voltage of the MOSFET, the method of fabricating the MOSFET may further include a process including threshold voltage adjustment, such as a work function layer formation process, a channel region doping fabrication process, and the like. The method for manufacturing the MOSFET further comprises a source electrode and drain electrode epitaxial process, a grid electrode side wall oxide layer manufacturing process and the like. Those skilled in the art can reasonably select and adjust the related process according to actual needs, and the description is omitted herein.
As shown in fig. 5a, in step S3, a second wafer 200 is provided, and the second wafer 200 is used as a carrier wafer for bonding with the first wafer 100 in a subsequent step. The type of the second wafer 200 is not limited in this application, and those skilled in the art can reasonably select the type according to the need. In some embodiments, the thickness of the second wafer 200 is 50-800 μm, which can be selected according to the process requirements.
Through step S4, hydrogen ions are implanted into the front surface 200a of the second wafer 200, thereby forming a hydrogen-containing layer 201 in the second wafer 200. It will be appreciated that the depth of the hydrogen-containing layer 201 in the second wafer 200 is related to the implantation energy of the hydrogen ions, and that the hydrogen-containing layer 201 may be located near the front surface 200a of the second wafer 200 or may be located at a depth within the second wafer 200, depending on the choice of the designer. In the embodiment shown in fig. 5b, the hydrogen containing layer 201 is located near the front side 200a of the second wafer 200, but it will be appreciated that in other embodiments the hydrogen containing layer 201 may also be located at a depth from the front side 200a of the second wafer 200.
In step S5, the front side 100a of the first wafer 100 and the front side 200a of the second wafer 200 are bonded together opposite to each other, thereby connecting the first wafer 100 and the second wafer 200 to form a wafer assembly having a larger thickness, see fig. 4b. In the bonding process, the first wafer 100 and the second wafer 200 may be bonded using direct bonding (direct bond), fusion bonding (fusion bonding), or hydrophobic bonding (Hydrophobic Si bond). In some embodiments, for example, one may employ: oxide-to-Oxide (Oxide-to-Oxide) bonding, silicon-to-silicon (Si-to-Si) bonding, nitrogen-doped silicon carbide-to-nitrogen-doped silicon carbide (NDC-to-NDC) bonding, silicon nitride-to-silicon nitride (SiN-to-SiN) bonding, oxide-to-silicon (Oxide-to-Si) bonding, oxide-to-silicon nitride (Oxide-to-SiN) bonding, and the like.
After bonding the first wafer 100 and the second wafer 200 together, an IGBT backside process is performed on the bonded wafer combination through step S6. Specifically, after bonding, the front surface 100a of the first wafer 100 and the front surface 200a of the second wafer 200 are bonded together, the back surface 100b of the first wafer 100 is exposed, and an IGBT back surface process is performed on the back surface 100b of the first wafer 100. Since the bonded first wafer 100 and second wafer 200 as a whole form a wafer assembly having a larger thickness, stability of the backside process can be increased and occurrence of defects can be reduced during the backside process performed on the wafer assembly.
In some embodiments, as shown in fig. 2 and 3, the IGBT back side process includes steps of S61 back side thinning process, S62 implantation of N type impurities required to form a field stop region (FS region), S63 implantation of P type impurities required to form a collector region (P type region), S64 low temperature annealing.
In some embodiments, the thinning process in S61 is performed by grinding the back surface 100b of the first wafer 100 bonded to the second wafer 200, and the thinned cross-sectional view is shown in fig. 4 c. Because the integrated thickness of the bonded first wafer 100 and second wafer 200 is thicker, defects such as chipping are not likely to occur during the polishing process, so that the first wafer 100 is polished to be thinner, for example, the thickness of the thinned first wafer may be 5-700 μm.
In step S62, an N-type impurity required for forming the FS region is implanted into the back surface 100b of the first wafer 100 to form the FS region 102 in the back surface 100b of the first wafer 100, and the implanted N-type impurity may be phosphorus (P), arsenic (As), antimony (Sb), sulfur (S), selenium (Se), or the like. In step S63, P-type impurities required for forming the P-type region are implanted into the back surface 100B of the first wafer 100 to form the P-type region 103 on the back surface 100B of the first wafer 100, wherein the implanted P-type impurities may be boron (B), boron difluoride (BF 2 ) Indium (In), and the like.
After the N-type impurity and the P-type impurity are implanted, S64 low temperature annealing is performed to sufficiently diffuse the N-type impurity and the P-type impurity. The temperature and time are adjusted during the annealing process so that the impurities diffuse to the desired thickness position, forming the FS region 102 and the P-type region 103, and simultaneously completing the activation of the N-type impurities and the P-type impurities, as shown in fig. 4 d. The low-temperature annealing temperature can be 300-600 ℃, the low-temperature annealing time is 0.5-4 h, and the low-temperature annealing time can be adjusted according to actual needs by a person skilled in the art.
In step S7, in order to separate the second wafer 200 from the first wafer 100, the wafer assembly is subjected to a heat treatment by an annealing process, so that bubbles are generated in the hydrogen-containing layer 201, and the second wafer 200 is broken at the hydrogen-containing layer 201 under the action of the bubbles, thereby separating a portion of the second wafer 200 between the hydrogen-containing layer 201 and the back surface 200b of the second wafer 200, and the separated cross-sectional view may refer to fig. 4f. The embodiment of the application provides a separation method for a second wafer 200 carrying a wafer, which is simple to operate and needs only to perform proper heat treatment on the wafer, and does not need to use extra equipment for separation, compared with the traditional mechanical separation method, thereby saving cost. The separated surface may also be subjected to a necessary planarization step, such as Chemical Mechanical Polishing (CMP), or the like, after separation.
In some embodiments, the breaking of the hydrogen-containing layer 201 may be achieved by means of the S64 low temperature anneal performed after the N-type impurity and P-type impurity implantation, in which case the separation of the wafer is skillfully achieved by means of the steps of the IGBT backside process, and only one anneal is required to achieve the diffusion activation of the FS region 102 and the P-type region 103 of the backside 100b of the first wafer 100 and the separation of the second wafer 200 portion, which greatly simplifies the process flow.
In other embodiments, even though the low temperature annealing process of S64 may not occur, the hydrogen-containing layer 201 may be subjected to a further annealing process by additionally setting a heat treatment process sufficient for the hydrogen-containing layer 201 to be broken. Whether additional annealing is required to fracture the hydrogen-containing layer 201 depends on factors such as the hydrogen ion content of the hydrogen-containing layer 201 and the heat treatment temperature.
After the FS regions 102 and P-type regions 103 have been formed, a step of S8 back side metallization is further included to metallize the back side 100b of the first wafer 100 to form a metal layer 104, as shown in fig. 4e and 4f. In some embodiments, a metal layer 104 of aluminum (Al), titanium (Ti), nickel (Ni), or silver (Ag) is formed on the back surface 100b of the first wafer 100, and the thickness of the metal layer 104 is 2000 to 8000 angstroms. The step S8 of backside metallization may be performed before the step S7 breaks the second wafer (as shown in fig. 2 and 4 e), or after the step S7 breaks the second wafer (as shown in fig. 3 and 4 f), depending on the set process conditions and whether a wafer stage is used.
In some embodiments, the front side of the first wafer 100 may be etched as needed before the second wafer 200 is bonded to the first wafer 100, thereby forming vias through to the MOSFET101 for subsequent electrical connection. A cross-sectional view of the front side of the first wafer 100 after performing an etching process is shown in fig. 4 a.
Accordingly, after the hydrogen-containing layer is formed in the second wafer 200, a step of etching the front surface 200a of the second wafer 200 is further included, the etching depth being greater than the depth of the hydrogen-containing layer 201, so that the silicon layer under the hydrogen-containing layer 201 is exposed at the front surface 200a of the second wafer 200, as shown in fig. 5 d. It will be appreciated that the etching position of the front surface 100a of the first wafer 100 corresponds to the etching position of the front surface 200a of the second wafer 200, so that after the front surface 100a of the first wafer 100 and the front surface 200a of the second wafer 200 are bonded together oppositely in step S5, holes that are substantially uniform up and down can be formed in the longitudinal direction of the wafer assembly, and after the portion of the second wafer between the hydrogen-containing layer and the back surface is removed in the subsequent step S7, the portion of the second wafer above the hydrogen-containing layer is left on the front surface of the first wafer, and through holes penetrating to the MOSFETs are formed in the front surface of the first wafer for subsequent electrical connection.
In some embodiments, the step of etching the front surface 200a of the second wafer 200 is preceded by a step of surface passivating the front surface 200a of the second wafer 200 to form a hard mask 202 on the front surface 200a of the second wafer 200, the hard mask 202 being used for subsequent etching after the surface passivation, as shown in fig. 5c in a cross-sectional view of the second wafer 200.
Fig. 6a to 6f are cross-sectional views of the wafer in each step in the case of etching the front surface 200a of the second wafer 200, and other processes except etching and surface passivation are the same as each step in which the second wafer 200 is not etched, and will not be described in detail. A cross-sectional view of the finally formed IGBT device is shown in fig. 6 f.
A second aspect of the embodiments of the present application provides an IGBT device manufactured by the method for manufacturing an IGBT device according to any of the embodiments of the present application, where the thickness of the IGBT device may be made thinner, for example, less than 100 μm, so as to effectively solve the problem of heat dissipation of a high-power device; in addition, the stability of the process in the manufacturing process is improved, so that the defects of broken pieces and the like are not easy to occur, and the product yield is high.
In some embodiments, as shown in fig. 4f and 6f, the IGBT device includes:
a first wafer 100 having a front side 100a and a back side 100b;
a MOSFET101 formed on the front surface 100a of the first wafer 100;
a hydrogen-containing layer 201 formed over the MOSFET101;
a field stop region 102, a collector region 103, and a metal layer 104 formed on the back surface 100b of the first wafer 100.
In some embodiments, as shown in fig. 6f, a via is formed on the front side of the IGBT device through to the MOSFET101 from the hydrogen containing layer 201 for electrical connection.
In some embodiments, the thickness of the IGBT device is less than or equal to 100 μm, and the thinner device thickness can effectively solve the heat dissipation problem of the high power device.
Finally, it should be noted that: in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same; while the invention has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that: modifications may be made to the specific embodiments of the present invention or equivalents may be substituted for part of the technical features thereof; without departing from the spirit of the invention, it is intended to cover the scope of the invention as claimed.
Claims (9)
1. The manufacturing method of the IGBT device is characterized by comprising the following steps of:
providing a first wafer for manufacturing an IGBT device;
performing an IGBT front-side process on the front-side of the first wafer to form a metal-oxide-semiconductor field effect transistor on the front-side of the first wafer;
etching the front surface of the first wafer so as to form a through hole penetrating to the metal-oxide-semiconductor field effect transistor;
providing a second wafer;
implanting hydrogen ions into the front surface of the second wafer to form a hydrogen-containing layer in the second wafer;
etching the front surface of the second wafer, wherein the etching depth is greater than the depth of the hydrogen-containing layer so as to expose the silicon layer below the hydrogen-containing layer, and the etching position of the front surface of the second wafer corresponds to the etching position of the front surface of the first wafer;
oppositely bonding the front side of the first wafer and the front side of the second wafer together to connect the first wafer and the second wafer together to form a wafer assembly;
performing an IGBT back process on the back of the first wafer in the wafer combination;
the second wafer is broken at the hydrogen-containing layer by an annealing process to remove a portion of the second wafer between the hydrogen-containing layer and the backside of the second wafer.
2. The method of fabricating an IGBT device of claim 1 wherein the first and second wafers are bonded by direct bonding, fusion bonding, or hydrophobic bonding.
3. The method for manufacturing the IGBT device according to claim 1, wherein the IGBT back side process includes: thinning the back, implanting N-type impurities required for forming a field stop region, implanting P-type impurities required for forming a collector region, and annealing at low temperature; and realizing the fracture of the hydrogen-containing layer by means of a low-temperature annealing step in the IGBT back process.
4. The method of manufacturing an IGBT device of claim 3 wherein the implanted N type impurity includes at least one of phosphorus, arsenic, hydrogen; the implanted P-type impurity includes at least one of boron, boron difluoride, and indium.
5. The method of fabricating an IGBT device of claim 3 further comprising a back side metallization step in which the back side of the first wafer where the field stop region and the collector region have been formed is metallized, the metallization step being performed before or after breaking the second wafer in the hydrogen containing layer.
6. The method for manufacturing the IGBT device according to claim 1, wherein the thickness of the second wafer is 50 to 800 μm.
7. The method of fabricating an IGBT device of claim 1 further comprising the step of surface passivating the front side of the second wafer to form a hard mask on the front side of the second wafer prior to the step of etching the front side of the second wafer.
8. An IGBT device fabricated according to the method of fabricating an IGBT device of any one of claims 1 to 7.
9. The IGBT device of claim 8 comprising:
the first wafer having a front side and a back side;
a metal-oxide-semiconductor field effect transistor formed on the front side of the first wafer;
the hydrogen-containing layer formed over the metal-oxide-semiconductor field effect transistor;
a field stop region, a collector region, and a metal layer formed on the back surface of the first wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311532215.3A CN117253790B (en) | 2023-11-17 | 2023-11-17 | IGBT device manufacturing method and IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311532215.3A CN117253790B (en) | 2023-11-17 | 2023-11-17 | IGBT device manufacturing method and IGBT device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117253790A CN117253790A (en) | 2023-12-19 |
| CN117253790B true CN117253790B (en) | 2024-02-09 |
Family
ID=89133589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311532215.3A Active CN117253790B (en) | 2023-11-17 | 2023-11-17 | IGBT device manufacturing method and IGBT device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117253790B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497407B (en) * | 2023-12-28 | 2024-04-09 | 物元半导体技术(青岛)有限公司 | IGBT device forming method and IGBT device |
| CN117476457B (en) * | 2023-12-28 | 2024-05-31 | 物元半导体技术(青岛)有限公司 | Semiconductor manufacturing method and semiconductor device |
| CN117497411B (en) * | 2023-12-29 | 2024-04-05 | 物元半导体技术(青岛)有限公司 | IGBT manufacturing method and IGBT semiconductor structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000061459A (en) * | 1999-03-26 | 2000-10-16 | 윤종용 | SOI transistor and manufacturing method thereof |
| CN101673766A (en) * | 2008-09-09 | 2010-03-17 | 飞兆半导体公司 | (110)-oriented p-channel trench mosfet having high-K gate dielectric |
| CN105374862A (en) * | 2014-09-01 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof, and electronic apparatus |
| CN108682649A (en) * | 2018-04-17 | 2018-10-19 | 中芯集成电路（宁波）有限公司 | SOI substrate, semiconductor devices and forming method thereof |
| CN110301033A (en) * | 2017-02-16 | 2019-10-01 | 信越化学工业株式会社 | Compound semiconductor layer laminated substrate and its manufacturing method and semiconductor element |
| CN113078047A (en) * | 2021-03-30 | 2021-07-06 | 芜湖启迪半导体有限公司 | Bonded Si substrate, preparation method thereof, and method for preparing Si/3C-SiC heterostructure and 3C-SiC film |
| CN116323471A (en) * | 2020-10-16 | 2023-06-23 | 索泰克公司 | Method for transferring a film |
-
2023
- 2023-11-17 CN CN202311532215.3A patent/CN117253790B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000061459A (en) * | 1999-03-26 | 2000-10-16 | 윤종용 | SOI transistor and manufacturing method thereof |
| CN101673766A (en) * | 2008-09-09 | 2010-03-17 | 飞兆半导体公司 | (110)-oriented p-channel trench mosfet having high-K gate dielectric |
| CN105374862A (en) * | 2014-09-01 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof, and electronic apparatus |
| CN110301033A (en) * | 2017-02-16 | 2019-10-01 | 信越化学工业株式会社 | Compound semiconductor layer laminated substrate and its manufacturing method and semiconductor element |
| CN108682649A (en) * | 2018-04-17 | 2018-10-19 | 中芯集成电路（宁波）有限公司 | SOI substrate, semiconductor devices and forming method thereof |
| CN116323471A (en) * | 2020-10-16 | 2023-06-23 | 索泰克公司 | Method for transferring a film |
| CN113078047A (en) * | 2021-03-30 | 2021-07-06 | 芜湖启迪半导体有限公司 | Bonded Si substrate, preparation method thereof, and method for preparing Si/3C-SiC heterostructure and 3C-SiC film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117253790A (en) | 2023-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN117253790B (en) | IGBT device manufacturing method and IGBT device | |
| US7605052B2 (en) | Method of forming an integrated circuit having a device wafer with a diffused doped backside layer | |
| US7563693B2 (en) | Method for manufacturing semiconductor substrate and semiconductor substrate | |
| US8338886B2 (en) | Semiconductor device with (110)-oriented silicon | |
| US9941383B2 (en) | Fast switching IGBT with embedded emitter shorting contacts and method for making same | |
| JP2007036211A (en) | Method of manufacturing semiconductor device | |
| US10249499B2 (en) | Method for manufacturing a semiconductor device comprising a thin semiconductor wafer | |
| CN111276542B (en) | Groove type MOS device and manufacturing method thereof | |
| JP2002203965A (en) | Semiconductor device | |
| CN116721918A (en) | IGBT device manufacturing method and IGBT device | |
| JP4972908B2 (en) | Manufacturing method of semiconductor device | |
| CN117253791A (en) | IGBT device manufacturing method and IGBT device | |
| JP2005311006A (en) | Semiconductor device and method of manufacturing the same | |
| JP5301091B2 (en) | Manufacturing method of semiconductor device | |
| JP4882214B2 (en) | Reverse blocking insulated gate semiconductor device and method for manufacturing the same | |
| JP2008103562A (en) | Manufacturing method of semiconductor device | |
| CN118522650A (en) | Method for manufacturing semiconductor device and semiconductor device | |
| US10784109B2 (en) | Semiconductor device | |
| CN103608896A (en) | Method for producing semiconductor device | |
| JP2022112943A (en) | Method for manufacturing silicon carbide semiconductor device | |
| JPH02135755A (en) | Dielectric isolated substrate and manufacture thereof | |
| JPH03185837A (en) | Semiconductor device and manufacture thereof | |
| JP2008053410A (en) | Manufacturing method of semiconductor device | |
| JPH01238059A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |