CN1172379C - Inverted type light-emitting diode - Google Patents
Inverted type light-emitting diode Download PDFInfo
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- CN1172379C CN1172379C CNB001268333A CN00126833A CN1172379C CN 1172379 C CN1172379 C CN 1172379C CN B001268333 A CNB001268333 A CN B001268333A CN 00126833 A CN00126833 A CN 00126833A CN 1172379 C CN1172379 C CN 1172379C
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Abstract
In the present invention, an indium gallium nitride light-emitting diode is inverted on a conductive substrate by making use of the characteristic of the transparent substrate of the indium gallium nitride light-emitting diode so as to increase light-emitting efficiency. In the present invention, an electric current is effectively dispersed to a whole crystal grain so as to increase light-emitting brightness without the need of producing a traditional light output layer. The present invention effectively increases a light-emitting area, and therefore, the same brightness as that of the prior art can be obtained by reducing the size of the crystal grain. Thus, more products can be produced in a unit area so as to greatly reduce production cost. The light-emitting diode structure in the present invention only needs to be marked with one line on the surface. The producing method is matched with the package producing process of the existing light-emitting diodes. The present invention has the advantage of cost reduction.
Description
The present invention relates to a kind of light-emitting diode, particularly a kind of inverted type light-emitting diode.
Generally, the III-V group nitride material for what have the highest direct forbidden band in all III-V family materials is, its emission wavelength scope contains from ultraviolet region to yellow light area, is fit to very much make the high-power light-emitting component of short wavelength.Though between the past many decades, the researcher attempts nitride series material is made for commercial prod, yet, because following technology can't break through, can't realize always:
1. lack a suitable substrates, can be for the nitride material of growth lattice match.
2. grow up " InGaN " (InGaN), the technology of the InGaN of the indium content that especially becomes to grow tall is difficulty very.
3. " gallium nitride " of high p type carrier concentration (GaN) is difficult for growing up; And
4. on component structure, be difficult for to form good electrode, therefore, not element electrically not good,
Up to the end of the year in 1993, (Nichia Chemical Industries Ltd. Japan) announced successfully to make first with the gallium nitride based blue LED of classifying material as Japan's " day inferior chemistry "; Afterwards, successfully develop again and the high brightness green LED.At present, there are many research units also to drop into quite huge resource in the world.Yet the winner also only limits to minority two or three tame manufacturer.Therefore as can be known, above-mentioned technological difficulties are still utmost point emphasis to be broken through.
The blue LED structure of day inferior chemistry as shown in Figure 1.At " sapphire substrate " (sapphiresubstrate) gallium nitride growth " coring layer " (nucleation layer), n type gallium nitride " resilient coating " (buffer layer), n type aluminium gallium nitride alloy " bond course " (cladding layer), not doping InGaN " quantum trap luminous layer " (quantum well light emitting layer), p type aluminium gallium nitride alloy bond course, p type gallium nitride " contact layer " (contact layer) in regular turn.Plated with nickel/gold " light output electrode " (light transmitting electrode) and p type nickel/gold electrode in regular turn again.And because sapphire substrate is an insulating material, therefore, must be etched to n type gallium nitride bond course place in the subregion of LED crystal particle, and forms a n type titanium/aluminium electrode thereon, just can finish whole element.This prior art has following several shortcomings:
(1) because the carrier concentration of p type gallium nitride contact layer, general through " heat treatment " (thermalannealing) after, mostly less than 1 * 10
18Cm
-3, the optimum value of its resistance coefficient has only about 1 Ω cm approximately.Because conductivity is not good, therefore, the electric current under p type electrode stream can't be distributed in whole crystal grain effectively, and forms " electric current is congested " (current crowding) phenomenon, thereby influences luminous efficiency.
With reference to prior art as shown in Figure 1, be to utilize as thin as a wafer a nickel/metal, thickness has only hundreds of " dusts " () to be used as " electric current dispersion layer " (current spreading layer) approximately, so as at whole crystal grain place scattered current effectively.Yet, the penetrance of this one nickel/metal " and (transmission) mostly less than 50%; Therefore, major part comes from the light that luminescent layer sends, and is all absorbed by this electric current dispersion layer, makes its luminous efficiency reduce.
(2) since p and n type electrode on one side, need greater than more than the 100 μ m for the general diameter of the required wire pad (bonding pad) of encapsulation is provided.And the brightness of light-emitting diode and light-emitting area and current density (current density) have direct relation, and current density is lower gets preferable reliability (reliability).With the insulation sapphire is the indium gallium nitride LED of base material, and general grain size is 350 * 350 μ m, and the grain size of high brightness AlGaInP light-emitting diode is between 225 * 225 μ m to 300 * 300 μ m.Its reason just is indium gallium nitride LED crystal grain, has the subregion to need to use as n type wire pad." if the wafer yield is 100%, the indium gallium nitride LED crystal grain of institute's output is only had an appointment 16500, and relative AlGaInP light-emitting diode quantum of output is between 22500 to 40000 with a slice 2.If can dwindle its unit quantum of output of crystallite dimension with high, relatively can reduce cost of manufacture.
(3) aforesaid existing indium gallium nitride LED is owing to use insulating substrate, and p and n type electrode must be produced on on the one side, during encapsulation, must make a call to two gold threads thereon simultaneously, and not only the cost of routing is higher, and the cost of encapsulation is also high.
The object of the present invention is to provide a kind of inverted type light-emitting diode, to address the above problem.
The object of the present invention is achieved like this, and a kind of inverted type light-emitting diode promptly is provided, and comprising: the first conductivity type base material, have first, and by second of local etching; First electrode is formed at first of aforesaid base material; The first type metal level is formed at the not etching area of second of aforesaid base material; First soldering-tin layer is formed on above the aforesaid first type metal level, and the usefulness that is connected in the first type ohm layer is provided; Electrical insulation layer is formed at the local etching zone of second of aforesaid base material; Metal level is formed on the aforesaid electrical insulation layer; Second electrode is formed on first regional area on the aforesaid metal level; And second soldering-tin layer, be formed on second regional area on the aforesaid metal level, the usefulness that is connected in the second N-type semiconductor N material is provided.
Its preferred first conductivity type base material of a kind of inverted type light-emitting diode is silicon, GaAs, gallium phosphide or carborundum.
Its preferred soldering-tin layer of a kind of inverted type light-emitting diode is gold-tin alloy or indium metal.
The present invention also provides a kind of method of making inverted type light-emitting diode, comprising: select a conductive-type semiconductor material as base material, have first, and second; Second of local etching aforementioned substrates; Make first electrode, be formed at first of aforesaid base material; Make the first type metal level, be formed at the not etching area of second of aforesaid base material; Make first soldering-tin layer, be formed on above the aforesaid first type metal level, for being connected in the first type ohm layer; Make electrical insulation layer, be formed at the local etching zone of second of aforesaid base material; Make metal level, be formed on the aforesaid electrical insulation layer; Make second electrode, be formed at first regional area on the aforesaid metal level; And make second soldering-tin layer, be formed on second regional area on the aforesaid metal level, for being connected in the second N-type semiconductor N material.
That is to say that the present invention utilizes a conductive-type semiconductor material as conductive base, the indium gallium nitride LED crystal grain that will have insulation and transparent base is inverted thereon.Plate ohmic contact layer and reflector at indium gallium nitride LED and the whole face of conductive semiconductor base material interface.So, the light that luminescent layer sent can be scattered in whole crystal grain equably, and can light be drawn crystal grain effectively by the reflector, to reach the purpose that improves luminous efficacy.In addition, the same electrical electrode of indium gallium nitride LED crystal grain and conductive-type semiconductor base material, can by and the conductive-type semiconductor base material between conducting, thereunder form electrode.So can dwindle the shared area of this electrode effectively, reach the purpose of dwindling crystallite dimension.On the conductive-type semiconductor base material, form another electrode at last, just finish light-emitting diode of the present invention.
Below in conjunction with accompanying drawing, describe embodiments of the invention in detail, wherein:
Fig. 1 is existing indium gallium nitride LED grainiess schematic diagram;
Fig. 2 A is an inversion type indium gallium nitride LED crystal grain epimere structural representation of the present invention;
Fig. 2 B is an inversion type indium gallium nitride LED crystal grain hypomere structural representation of the present invention;
Fig. 3 is an inversion type indium gallium nitride LED crystal grain schematic diagram of the present invention.
Inversion type indium gallium nitride LED of the present invention, the partial structurtes of making earlier indium gallium nitride LED crystal grain according to existing manufacture craft shown in Fig. 2 A, plate whole p type ohm layer at etching region not, plate n type ohm layer at etching region.
Secondly, making the silicon wafer pedestal, shown in Fig. 2 B, is base material with a n type silicon wafer, and the bottom surface makes a n type electrode.Most of zone of n type silicon wafer covers an insulated type silica or a silicon nitride then with between about 1～3 μ m of etching mode etching.Make a metal level more thereon, use for the p type electrode of follow-up making and the p type ohmic contact layer conducting of indium gallium nitride LED.On the not etched plane of n type silicon wafer, form the ohmic contact layer of one deck n type silicon substrate.
At last, the indium gallium nitride LED crystal grain of Fig. 2 A is inverted on the pedestal of Fig. 2 B and finishes inversion type indium gallium nitride LED of the present invention, as shown in Figure 3.Between n type silicon substrate and the indium gallium nitride LED mode, as being fitted and connected and finishing with gold-soldering bed course (Au-Sn solder layer) by metal-clad (metal bonding).
Indium gallium nitride LED structure of the present invention has following several advantages:
(1) has splendid light essence and get efficient (light extraction efficiency) and electric current dispersion (current spreading) effect.Inversion type indium gallium nitride LED of the present invention is to grow up on transparent sapphire substrate.When being upside down in it on silicon substrate, the light that spontaneous photosphere is emitted can see through the transparent sapphire base material effectively.In addition, below the contact of p type gallium nitride, plate one whole ohm layer, as metal levels such as nickel/gold; Owing to need not consider the relation of penetrance, this metal layer thickness can surpass more than 100 dusts (), compare with the electric current dispersion effect of nickel of the prior art/golden light output layer to get well many.And, also can below this ohm layer, plate layer of metal reflector (reflectinglayer), with the light that sends downwards reflected back crystal grain effectively, exhale thereby pass the transparent sapphire base material.
(2) can effectively utilize light-emitting area, dwindle crystallite dimension: the n type ohm layer that forms ohmic contact in the indium gallium nitride LED crystal grain among the present invention with n type gallium nitride, as metal levels such as titanium aluminium, because the required wire pad of routing when encapsulation no longer is provided, therefore, element area of the present invention can significantly dwindle.The size of existing indium gallium nitride LED crystal grain is about 350 * 350 μ m.Inversion type indium gallium nitride LED crystal grain of the present invention can be contracted to 300 * 300 μ m even 275 * 275 μ m.Therefore relative unit crystal grain quantum of output can improve about 36% and 62%.
(3) encapsulation technology with traditional light-emitting diode is complementary.The present invention is owing to utilize the very cheap silicon wafer of price as substrate, and not only the manufacturing cost that is increased is extremely low; More, therefore, only need during encapsulation under n type silicon crystal slate, to be coated with last layer elargol and support (lead frame) conducting, and on p type electrode, stamp gold thread and another metallic support conducting owing to have the conductivity type substrate; Mate fully with traditional light-emitting diode packaging technology, therefore, can reduce the packaging cost of element significantly.
Aforementioned description example, disclosed preferred embodiment of the present invention and designed graphicly, but preferred embodiment and designing graphicly only illustrates, and is not to be used to limit the present invention, all equalizations of doing by the appended claim of the present invention change and modify, and all should belong to letter lid scope of the present invention.
Claims (9)
1. inverted type light-emitting diode comprises:
The first conductivity type base material has first, and by second of local etching;
First electrode is formed at first of aforesaid base material;
The first type metal level is formed at the not etching area of second of aforesaid base material;
First soldering-tin layer is formed on above the aforesaid first type metal level, and the usefulness that is connected in the first type ohm layer is provided;
Electrical insulation layer is formed at the local etching zone of second of aforesaid base material;
Metal level is formed on the aforesaid electrical insulation layer;
Second electrode is formed on first regional area on the aforesaid metal level; And
Second soldering-tin layer is formed on second regional area on the aforesaid metal level, for being connected in the second N-type semiconductor N material.
2. a kind of inverted type light-emitting diode as claimed in claim 1, the wherein said first conductivity type base material is meant: silicon, GaAs, gallium phosphide or carborundum.
3. a kind of inverted type light-emitting diode as claimed in claim 1, wherein said soldering-tin layer is meant: gold-tin alloy or indium metal.
4. a kind of inverted type light-emitting diode as claimed in claim 1 also comprises:
The first type ohmic contact layer is formed on aforesaid first soldering-tin layer;
Contact layer is formed on aforesaid second soldering-tin layer;
First bond course is formed on the aforesaid contact layer;
Luminescent layer is formed on aforesaid first bond course;
Second bond course is formed on the aforesaid luminescent layer;
Resilient coating is formed on aforesaid second bond course and the aforesaid first type ohmic contact layer;
The coring layer, be formed on the aforesaid resilient coating; And
Transparent insulating layer is formed on the aforesaid coring layer.
5. method of making inverted type light-emitting diode comprises:
Select a conductive-type semiconductor material as base material, have first, and second;
Second of local etching aforementioned substrates;
Make first electrode, be formed at first of aforesaid base material;
Make the first type metal level, be formed at the not etching area of second of aforesaid base material;
Make first soldering-tin layer, be formed on above the aforesaid first type metal level, for being connected in the first type ohm layer;
Make electrical insulation layer, be formed at the local etching zone of second of aforesaid base material;
Make metal level, be formed on the aforesaid electrical insulation layer;
Make second electrode, be formed at first regional area on the aforesaid metal level; And
Make second soldering-tin layer, be formed on second regional area on the aforesaid metal level, for being connected in the second N-type semiconductor N material.
6. a kind of method of making inverted type light-emitting diode as claimed in claim 5 also comprises:
Make the first type ohmic contact layer, be formed on aforesaid first soldering-tin layer;
Make contact layer, be formed on aforesaid second soldering-tin layer;
Make first bond course, be formed on the aforesaid contact layer;
Make luminescent layer, be formed on aforesaid first bond course;
Make second bond course, be formed on the aforesaid luminescent layer;
Make resilient coating, be formed on aforesaid second bond course and the aforesaid first type ohmic contact layer;
Make the coring layer, be formed on the aforesaid resilient coating; And
Make transparent insulating layer, be formed on the aforesaid coring layer.
7. a kind of method of making inverted type light-emitting diode as claimed in claim 5 also comprises:
Make the LED crystal particle partial structurtes, have the first type contact electrode layer and the second type contact electrode layer, be inverted the aforesaid first type contact electrode layer of coupling in the aforesaid first type metal level, and the aforesaid second type contact electrode layer that is coupled is in aforesaid metal level.
8. a kind of method of making inverted type light-emitting diode as claimed in claim 7, wherein said coupling, bonding in addition by welding material.
9. a kind of method of making inverted type light-emitting diode as claimed in claim 8, wherein said welding material is meant: gold-tin alloy or indium metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001268333A CN1172379C (en) | 2000-09-05 | 2000-09-05 | Inverted type light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001268333A CN1172379C (en) | 2000-09-05 | 2000-09-05 | Inverted type light-emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN1341971A CN1341971A (en) | 2002-03-27 |
| CN1172379C true CN1172379C (en) | 2004-10-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001268333A Expired - Lifetime CN1172379C (en) | 2000-09-05 | 2000-09-05 | Inverted type light-emitting diode |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100431183C (en) * | 2005-11-02 | 2008-11-05 | 元砷光电科技股份有限公司 | Vertical type light emitting diode, and fabricating method |
| KR101616905B1 (en) * | 2009-10-22 | 2016-04-29 | 엘지디스플레이 주식회사 | Semiconductor light-emitting device |
| CN103680340A (en) * | 2013-12-18 | 2014-03-26 | 长春希达电子技术有限公司 | Integrated LED display encapsulated module suitable for ultrahigh display density |
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2000
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Granted publication date: 20041020 |