CN117177086B - Pixel circuit of high sharpness detector, high sharpness detector and control method - Google Patents

Abstract

The present application relates to the field of detection technology, and in particular to a pixel circuit of a high-sharpness detector, a high-sharpness detector and a control method. The circuit includes a voltage-dividing branch composed of a photosensitive detection unit, a row scanning switch unit, and a current control unit, an amplifying branch composed of a load unit and a voltage amplifying unit, and an output switch unit. In the detection stage, the current control unit receives a first current control signal, the row scanning switch unit and the output switch unit receive a row scanning signal, the voltage-dividing branch controls the amplifying branch to output an amplified signal, and outputs a detection signal through the output switch unit; wherein the row scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state, so as to obtain a clearer detail contrast and a greater image sharpness.

Description

Pixel circuit of high-sharpness detector, high-sharpness detector and control method

Technical Field

The present application relates to the field of detection technology, and in particular to a pixel circuit of a high-sharpness detector, a high-sharpness detector and a control method.

Background technique

Sharpness is an indicator that reflects the clarity of the image plane and the sharpness of the image edge. In the field of photography, the high sharpness of the lens is a double-edged sword. On the one hand, it makes the visual effect of the picture clear. On the other hand, due to the improvement of contrast, some originally unpleasant main details will be magnified and cover the secondary details, resulting in a decrease in actual details and a lack of hierarchy. For example, in the AOI (Automatic Optic Inspection) defect detection of LCD panels, the area of point defects is used to indicate the severity of the defects; therefore, obtaining an accurate detection value of the point defect area is crucial for point defect identification and classification, and directly affects the determination result of the defect level of the LCD panel. Point defects are microscopic defects. At present, high-resolution industrial cameras are used to identify them, but the depth of field of industrial camera lenses is limited. When the distance between the object to be measured and the lens exceeds the working distance of the lens, the camera image will be out of focus, forming a diffuse spot. This phenomenon will cause the edges in the image to become blurred and the area of the area deviates from the true value.

For ordinary camera lenses, the sharpness (contrast) decreases as the distance between the photosensitive position and the center of the lens increases, making the photos have a distribution characteristic of high sharpness in the center of the picture (indicating resolution) and low edge sharpness. In other words, it is difficult for photos taken by current ordinary camera lenses to achieve high sharpness in the entire photo (full field of view) (for example, the sharpness of the full field of view is the same as the sharpness of the central area of the picture). In other words, current ordinary camera lenses cannot capture high-sharp images with a full field of view.

Summary of the invention

Based on this, it is necessary to provide a pixel circuit of a high-sharpness detector, a high-sharpness detector and a control method to address the above technical problems.

In a first aspect, an embodiment of the present invention provides a pixel circuit of a high-sharpness detector, wherein the circuit includes a voltage-dividing branch composed of a photosensitive detection unit, a row scanning switch unit, and a current control unit, an amplifying branch composed of a load unit and a voltage amplifying unit, and an output switch unit; the photosensitive detection unit, the row scanning switch unit, and the current control unit are sequentially connected between a power supply end and a common ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the common ground, the voltage-dividing branch is connected to the amplifying branch, and the output switch unit is connected to a midpoint of the load unit and the voltage amplifying unit;

In the detection stage, the current control unit receives a first current control signal, the row scanning switch unit and the output switch unit receive a row scanning signal, the voltage dividing branch controls the amplifying branch to output an amplified signal, and the detection signal is output through the output switch unit;

The row scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.

In one embodiment, the row scan switch unit includes a switch tube M2, the current control unit includes a switch tube M3, the gate of the switch tube M2 is connected to the row scan signal, the source of the switch tube M2 is connected to the drain of the switch tube M3, the drain of the switch tube M2 is connected to one end of the photosensitive detection unit, the gate of the switch tube M3 is connected to the first current control signal, and the source of the switch tube M3 is connected to the common ground.

In one embodiment, the load unit includes a switch tube M1, the voltage amplification unit includes a switch tube M4, the gate and drain of the switch tube M1 are connected to the power supply end, the source of the switch tube M1 is connected to the drain of the switch tube M4, the gate of the switch tube M4 is connected to the drain of the switch tube M3, and the source of the switch tube M4 is connected to the common ground.

In one embodiment, the output switch unit includes a switch tube M5, a gate of the switch tube M5 is connected to a row scan signal, a drain of the switch tube M5 is connected to a midpoint of the load unit and the voltage amplification unit, and a source of the switch tube M5 outputs a detection signal.

In one embodiment, the load unit includes a switch tube M6, the voltage amplification unit includes a switch tube M7, the gate of the switch tube M6 is connected to the second current control signal, the drain of the switch tube M6 is connected to the power supply end, the source of the switch tube M6 is connected to the drain of the switch tube M7, the gate of the switch tube M7 is connected to the drain of the switch tube M3, and the source of the switch tube M7 is connected to the common ground.

In one embodiment, the load unit includes a switch tube M8, the voltage amplification unit includes a switch tube M9, the gate and drain of the switch tube M8 are connected, the source of the switch tube M8 is connected to the power supply end, the drain of the switch tube M8 is connected to the drain of the switch tube M9, the gate of the switch tube M9 is connected to the drain of the switch tube M3, and the source of the switch tube M9 is connected to the common ground.

In one embodiment, the load unit includes a switch tube M10, and the voltage amplification unit includes a switch tube M11. The gate of the switch tube M10 is connected to the drain of the switch tube M3, the source of the switch tube M10 is connected to the power supply end, the drain of the switch tube M10 is connected to the drain of the switch tube M11, the gate of the switch tube M11 is connected to the drain, and the drain of the switch tube M11 is connected to the common ground.

In one embodiment, the load unit includes a switch tube M12, the voltage amplification unit includes a switch tube M13, the gate of the switch tube M12 is connected to the drain of the switch tube M3, the source of the switch tube M12 is connected to the power supply end, the drain of the switch tube M12 is connected to the drain of the switch tube M13, the gate of the switch tube M13 is connected to the third current control signal, and the drain of the switch tube M13 is connected to the common ground.

In a second aspect, an embodiment of the present invention provides a high-sharpness detector, comprising an array device composed of a plurality of pixel circuits arranged as described in the second aspect, at least one signal driving unit and a detection unit;

The at least one signal driving unit is connected to each of the pixel circuits and is used to output a first current control signal and a row scanning signal;

The detection unit is connected to each of the pixel circuits and is used to provide a power supply terminal and receive a detection signal.

In a third aspect, an embodiment of the present invention provides a control method for a high-sharpness detector, which is applied to the high-sharpness detector as described in the second aspect, and the method includes:

In the detection phase, a first current control signal and a row scanning signal are sequentially provided to each row of pixel circuits in the array device in accordance with a specific switching sequence, so as to control the row scanning switch unit and the output switch unit to be in a linear state, and the current control unit, the load unit and the voltage amplification unit to be in a saturated state;

The detection signal output by each row of pixel circuits is received in sequence.

Compared with the prior art, in the above-mentioned pixel circuit, high-sharpness detector and control method, in the detection stage, the current control unit receives a first current control signal, the row scanning switch unit and the output switch unit receive a row scanning signal, the voltage divider branch controls the amplifying branch to output an amplified signal, and the detection signal is output through the output switch unit; wherein the row scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturation state, so as to obtain clearer detail contrast and greater image sharpness.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic diagram of the structure of a pixel circuit of a high-sharpness detector in one embodiment;

FIG2 is a circuit diagram of a pixel circuit of a high-sharpness detector in a first exemplary embodiment;

FIG3 is a schematic diagram of signals at various stages in the first exemplary embodiment;

FIG4 is a circuit diagram of a pixel circuit of a high-sharpness detector in a second exemplary embodiment;

FIG5 is a circuit schematic diagram of a pixel circuit of a high-sharpness detector in a third exemplary embodiment;

FIG6 is a circuit schematic diagram of a pixel circuit of a high-sharpness detector in a fourth exemplary embodiment;

FIG7 is a circuit schematic diagram of a pixel circuit of a high-sharpness detector in a fifth exemplary embodiment;

FIG8 is a schematic diagram of the structure of a high-sharpness detector in one embodiment;

FIG9 is a schematic flow chart of a control method in an embodiment;

FIG. 10 is a schematic diagram of various signals in an embodiment.

Detailed ways

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present invention. For ordinary technicians in this field, the present invention can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

As shown in the present invention and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and/or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list, and the method or device may also include other steps or elements.

Although the present invention makes various references to certain modules in the system according to an embodiment of the present invention, any number of different modules can be used and run on a computing device and/or processor. The modules are only illustrative, and different aspects of the system and method can use different modules.

It should be understood that when a unit or module is described as being "connected," "coupled" to other units, modules, or blocks, it may refer to being directly connected or coupled, or communicating with other units, modules, or blocks, or there may be intermediate units, modules, or blocks, unless the context clearly indicates otherwise. The term "and/or" as used herein may include any and all combinations of one or more of the associated listed items.

In one embodiment, as shown in FIG. 1 , a pixel circuit of a high-sharpness detector is provided, the circuit comprising a voltage-dividing branch 10 consisting of a photosensitive detection unit 101, a row scanning switch unit 102, and a current control unit 103, an amplifying branch 20 consisting of a load unit 201, a voltage amplifying unit 202, and an output switch unit 30; the photosensitive detection unit 101, the row scanning switch unit 102, and the current control unit 103 are sequentially connected between a power supply terminal VDD and a common ground, the load unit 201 and the voltage amplifying unit 202 are sequentially connected between a power supply terminal VDD and a common ground, the voltage-dividing branch 10 is connected to the amplifying branch 20, and the output switch unit 30 is connected to the midpoint of the load unit 201 and the voltage amplifying unit 202.

Among them, the photosensitive detection unit 101 is a photosensitive material whose resistance decreases or increases after being exposed to light. The photosensitive detection unit is a photoresistor, but is not limited to a photoresistor. It can be a pressure resistor, a thermistor, and other units whose resistance value changes after being stimulated by external conditions.

The current control unit 103 is connected to a first current control signal Vb, and the first current control signal Vb is used to control the current control unit 103 to generate a required constant current.

The load unit 201 acts as a load in the amplifying branch.

The row scan signal is used to change the gate voltage of the row scan switch unit 102 to control the opening and closing of the row scan switch unit; it is also used to change the gate voltage of the output switch unit 30 to control the opening and closing of the output switch unit. The output switch unit 30 is used to isolate the mutual interference when different row signals are output.

The row scanning switch unit 102 , the current control unit 103 , the load unit 201 , and the voltage amplifying unit 202 are thin film transistors, which may be voltage-controlled devices such as MOSFET and JFET.

When the row scan signal reaches the current row, the voltage-dividing branch 10 turns on the row scan control unit of the current row, and the other row scan control units are turned off. When the row scan signal reaches the current row, the current control unit generates the required current, and the current generates the voltage division through the photosensitive detection unit 101, and the voltage division controls the amplification branch to generate an amplified signal, which outputs the detection signal OUT through the output switch unit 30. When the photoresistor receives external light, the voltage division changes, and the detection signal changes synchronously.

During the detection stage, the current control unit 103 receives a first current control signal, the row scan switch unit 102 and the output switch unit 30 receive a row scan signal, the voltage divider branch 10 controls the amplifying branch 20 to output an amplified signal, and outputs a detection signal OUT through the output switch unit 30; wherein, the row scan switch unit 102 and the output switch unit 30 are in a linear state, and the current control unit 103, the load unit 201 and the voltage amplifying unit 202 are in a saturated state.

Since the row scanning switch unit and the output switch unit are in a linear state, that is, the output detection signal and the input light intensity have different slope relationships, a larger slope means that when the light intensity difference between adjacent pixels is the same, the voltage value difference of the detection signal is greater, so a clearer detail contrast and greater image sharpness can be obtained.

In a first exemplary embodiment, as shown in FIG2 , the row scan switch unit includes a switch tube M2, the current control unit includes a switch tube M3, the gate of the switch tube M2 is connected to a row scan signal, the source of the switch tube M2 is connected to the drain of the switch tube M3, the drain of the switch tube M2 is connected to one end of a photosensitive detection unit, the gate of the switch tube M3 is connected to a first current control signal, and the source of the switch tube M3 is connected to a common ground.

The load unit includes a switch tube M1, and the voltage amplification unit includes a switch tube M4. The gate and drain of the switch tube M1 are connected to the power supply terminal VDD, the source of the switch tube M1 is connected to the drain of the switch tube M4, the gate of the switch tube M4 is connected to the drain of the switch tube M3, and the source of the switch tube M4 is connected to the common ground.

The output switch unit includes a switch tube M5, a gate of the switch tube M5 is connected to a row scan signal, a drain of the switch tube M5 is connected to a midpoint of the load unit and the voltage amplification unit, and a source of the switch tube M5 outputs a detection signal.

As shown in FIG3 , the operation of the pixel circuit can be divided into five stages, which are named as: p1 reset stage, p2 detection stage and p3 reset stage, p4 reset stage 1, and p5 closing stage.

P1 reset stage: the first current control signal Vb rises from a low potential to a high potential, the current row switch tube M3 is turned on, the gate voltage of the switch tube M4 is reset, the row scan signal SW is at a low potential, and the switch tubes M2 and M5 remain in the off state;

p2 detection stage: the first current control signal Vb maintains a high potential, the switch tubes M3 and M4 remain in the on state, the row scan signal SW changes from a low potential to a high potential, the switch tubes M2 and M5 are turned on, and a suitable transistor size (including transistor material, transistor aspect ratio, etc.) and a suitable row scan signal SW are selected, the first current control signal Vb, the power supply VDD voltage, the switch tubes M2 and M5 are in a linear state, the switch tubes M3, the switch tubes M1 and the switch tubes M4 are in a saturated state, and the voltage of the detection signal output in the detection stage is:

,

Among them, gm1, gm3 and gm4 are the change rates of the input admittance of the switch tubes M1, M2 and M3 to the output current, and RLn is the resistance value of the photosensitive detection unit. , a is the ratio of the resistance of the photosensitive detection unit to the light intensity.

According to the above relationship, we only need to reasonably adjust the change rate gm3, the change rate gm4, the first current control signal Vb, the change rate gm1 and the ratio a to obtain different slope relationships between the voltage of the detection signal and the input light intensity. A larger slope means that when the light intensity difference between adjacent pixels is the same, the difference in the detection voltage value is greater, and a clearer detail contrast and greater image sharpness can be obtained through the external system.

p3 reset stage: the first current control signal Vb decreases from a high potential to a low potential, the switch tube M3 is turned off, the potential at point N rises to VDD (or the threshold voltage of the switch tube M2), the switch tube M4 enters the linear region, and the potential at point M is reset;

p4 reset stage: the row scanning signal SW changes from high potential to low potential, the switches M2 and M5 are turned off, the first current control signal Vb changes from low potential to high potential, the switch M3 is turned on, the potential of the point N is reset to ground, and the switch M4 is turned off;

p5 Closing stage: After the current row of pixels are scanned and reset, the row scanning signal SW maintains a low potential, and the first current control signal Vb changes from a high potential to a low potential, thus cutting off the connection between the current row and the entire array.

The pixel circuit proposed in this embodiment can effectively adjust the voltage signal difference detected between different pixel points under the same brightness difference through the first current control signal; it can effectively reset the voltage of the key node in the circuit through the reset method, ensure that the pixel has no circuit path when it is not working, and reduce the power consumption of the detector panel.

In the second exemplary embodiment, as shown in FIG4 , the difference from the first exemplary embodiment is that the load unit includes a switch tube M6, the voltage amplifying unit includes a switch tube M7, the gate of the switch tube M6 is connected to the second current control signal, the drain of the switch tube M6 is connected to the power supply end, the source of the switch tube M6 is connected to the drain of the switch tube M7, the gate of the switch tube M7 is connected to the drain of the switch tube M3, and the source of the switch tube M7 is connected to the common ground.

The switch tube M6 is a diode unit load, and the gate of the switch tube M6 is controlled by the second current control signal Va, and always works in a saturation state during the operation of the pixel circuit.

In the third exemplary embodiment, as shown in FIG5 , the difference from the first exemplary embodiment is that the load unit includes a switch tube M8, the voltage amplifying unit includes a switch tube M9, the gate of the switch tube M8 is connected to the drain, the source of the switch tube M8 is connected to the power supply end, the drain of the switch tube M8 is connected to the drain of the switch tube M9, the gate of the switch tube M9 is connected to the drain of the switch tube M3, and the source of the switch tube M9 is connected to the common ground.

The switch tube M8 adopts a diode connection mode of a p-type transistor.

In the fourth example embodiment, as shown in FIG6 , the difference from the first example embodiment is that the load unit includes a switch tube M10, the voltage amplification unit includes a switch tube M11, the gate of the switch tube M10 is connected to the drain of the switch tube M3, the source of the switch tube M10 is connected to the power supply end, the drain of the switch tube M10 is connected to the drain of the switch tube M11, the gate of the switch tube M11 is connected to the drain, and the drain of the switch tube M11 is connected to the common ground.

The output branch of the circuit adopts a p-type common source amplifier structure as a whole, that is, the switch tube M10 and the switch tube M11 are respectively p-type transistors, and the switch tube M10 is a load connected to a p-type diode.

In the fifth example embodiment, as shown in FIG7 , the difference from the first example embodiment is that the load unit includes a switch tube M12, the voltage amplification unit includes a switch tube M13, the gate of the switch tube M12 is connected to the drain of the switch tube M3, the source of the switch tube M12 is connected to the power supply end, the drain of the switch tube M12 is connected to the drain of the switch tube M13, the gate of the switch tube M13 is connected to the third current control signal, and the drain of the switch tube M13 is connected to the common ground.

The output branch of the pixel circuit adopts a p-type common source amplifier structure as a whole, that is, the switch tube M12 and the switch tube M13 respectively adopt p-type transistors, and the switch tube M12 is a p-type current source load.

It should be noted that the operating principles of the pixel circuits in the second exemplary embodiment, the third exemplary embodiment, the fourth exemplary embodiment, the fifth exemplary embodiment and the first exemplary embodiment are substantially the same, and therefore will not be described in detail.

In one embodiment, as shown in FIG8 , a high-sharpness detector is proposed, comprising an array device 1 composed of a plurality of pixel circuits, at least one signal driving unit 2 and a detection unit 3; the at least one signal driving unit 2 is connected to each of the pixel circuits for outputting a first current control signal and a row scanning signal; the detection unit 3 is connected to each of the pixel circuits for providing a power supply terminal and receiving a detection signal.

Specifically, the pixel array is deployed in a certain range in a densely packed manner, and row scanning signals of different rows of the pixel array are not connected to each other. All DC high-potential signals inside the array are connected together through horizontal and vertical wiring, and the DC high-potential signal VDD is provided to them through the detection unit. The current control signals of the same row of the pixel array are connected together, and the detection unit forms an equal constant current for the voltage divider branch by controlling the current control units of all pixel units; the current control signals of different rows of the pixel array are connected together, and the detection unit controls the current control units of all pixel units through the connection point to form an equal constant current for the voltage divider branch; the output ends of the output switch units of the same column of the pixel array are connected together, and the detection unit detects the detection signals output by all pixel circuits in turn through the row; the detection signals output by different columns of the pixel array are not connected.

In this embodiment, the first current control signal and the row scanning signal are generated by the signal driving units distributed on the left and right sides, and enter the arrayed pixel circuit through the horizontal wiring connection. The constant voltage DC high level VDD is generated by the detection unit (or the related constant voltage unit), enters the array device through the bottom wiring, and the array area is connected to each other through the horizontal wiring. The mesh design structure can effectively reduce the voltage drop of the VDD signal; the ground potential is connected together by the whole surface evaporation electrode. The use of materials with small square resistance can effectively reduce the voltage drop of related nodes and improve the performance of the circuit. The detection signal is output to the detection unit through the vertical wiring, and the detection signal output by each column is connected to the same signal at the same time. The opening and closing of each row of pixel circuits are controlled by the related row scanning signal, and the detection signal is independently input into the detection unit in turn. The detection unit is embedded in the array device in a heterogeneous connection manner and connected with the related signals.

This high-sharpness detector can effectively realize the integration of sensing and computing, reduce the pressure of post-processing data, and reduce the requirements for external systems; it can adopt thin-film transistor technology, providing a basis for flexible development.

In one embodiment, as shown in FIG9-FIG10, a control method of a high-sharpness detector is proposed, which is applied to the high-sharpness detector described in the above embodiment, and the method includes:

S102: In the detection phase, a first current control signal and a row scanning signal are sequentially provided to each row of pixel circuits in the array device according to a specific switching sequence, so as to control the row scanning switch unit and the output switch unit to be in a linear state, and the current control unit, the load unit and the voltage amplification unit to be in a saturated state;

S104: receiving detection signals output by each row of pixel circuits in sequence.

For the specific limitations on the control method, please refer to the limitations on the high-sharpness detector above, which will not be repeated here.

Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims (8)

1. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switching tube M1, the voltage amplifying unit comprises a switching tube M4, a grid electrode and a drain electrode of the switching tube M1 are connected with a power supply end, a source electrode of the switching tube M1 is connected with the drain electrode of the switching tube M4, a grid electrode of the switching tube M4 is connected with the drain electrode of the switching tube M3, and a source electrode of the switching tube M4 is connected with a public ground;

in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;

the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.

2. The circuit of claim 1, wherein the output switching unit includes a switching tube M5, a gate of the switching tube M5 is connected to a row scan signal, a drain of the switching tube M5 is connected to a midpoint of the load unit and the voltage amplifying unit, and a source of the switching tube M5 outputs a detection signal.

3. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M6, the voltage amplifying unit comprises a switch tube M7, a grid electrode of the switch tube M6 is connected with a second current control signal, a drain electrode of the switch tube M6 is connected with a power supply end, a source electrode of the switch tube M6 is connected with a drain electrode of the switch tube M7, a grid electrode of the switch tube M7 is connected with a drain electrode of the switch tube M3, and a source electrode of the switch tube M7 is connected with a public ground;

in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;

the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.

4. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M8, the voltage amplifying unit comprises a switch tube M9, the grid electrode of the switch tube M8 is connected with the drain electrode, the source electrode of the switch tube M8 is connected with the power supply end, the drain electrode of the switch tube M8 is connected with the drain electrode of the switch tube M9, the grid electrode of the switch tube M9 is connected with the drain electrode of the switch tube M3, and the source electrode of the switch tube M9 is connected with the public ground;

in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;

the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.

5. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M10, the voltage amplifying unit comprises a switch tube M11, a grid electrode of the switch tube M10 is connected with a drain electrode of the switch tube M3, a source electrode of the switch tube M10 is connected with a power supply end, a drain electrode of the switch tube M10 is connected with a drain electrode of the switch tube M11, a grid electrode of the switch tube M11 is connected with the drain electrode, and the drain electrode of the switch tube M11 is connected with a public ground;

in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;

the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.

6. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M12, the voltage amplifying unit comprises a switch tube M13, a grid electrode of the switch tube M12 is connected with a drain electrode of the switch tube M3, a source electrode of the switch tube M12 is connected with a power supply end, a drain electrode of the switch tube M12 is connected with a drain electrode of the switch tube M13, a grid electrode of the switch tube M13 is connected with a third current control signal, and a drain electrode of the switch tube M13 is connected with a public ground;

in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;

the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.

7. A high sharpness detector comprising an array arrangement of a plurality of pixel circuit arrangements according to any of claims 1 to 6, at least one signal driving unit and a detection unit;

the at least one signal driving unit is connected with each pixel circuit and is used for outputting a first current control signal and a line scanning signal;

the detection unit is connected with each pixel circuit and is used for providing a power supply end and receiving detection signals.

8. A control method of a high sharpness detector according to claim 7, characterized in that the method comprises:

in a detection stage, sequentially providing a first current control signal and a row scanning signal for each row of pixel circuits in an array device according to a specific switching sequence so as to control the row scanning switching unit and the output switching unit to be in a linear state, wherein the current control unit, the load unit and the voltage amplifying unit are in a saturated state;

and receiving detection signals output by each row of pixel circuits in turn.