CN117176104B - Resonator based on lithium tantalate film and forming method thereof - Google Patents
Resonator based on lithium tantalate film and forming method thereof Download PDFInfo
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Abstract
A lithium tantalate thin film based resonator and method of forming the same, the method comprising: forming a cavity on the surface of a semiconductor substrate, and filling a sacrificial layer in the cavity; forming a patterned lower plate metal layer, a portion of which covers the sacrificial layer; forming patterned Ta covering the sacrificial layer x O y A film; applying ion implantation process to the Ta x O y Injecting lithium ions into the film to form a patterned lithium tantalate film; performing a first annealing treatment by adopting a laser annealing process, and thinning the lithium tantalate film after the first annealing treatment; forming a patterned upper plate metal layer covering the sacrificial layer; releasing the sacrificial layer. The invention can reduce the process cost and improve the surface property of the lithium tantalate film and the performance of the resonator.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a resonator based on a lithium tantalate film and a forming method thereof.
Background
In the conventional resonator device manufacturing process, for example, a surface acoustic wave (Surface Acoustic Wave, SAW) device is used as a wafer substrate material, and a lithium tantalate (LiTaO 3, LT) wafer (also referred to as a lithium tantalate single crystal bulk) is obtained, and the device is manufactured on the lithium tantalate wafer, and is large in size and not compatible with the complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) process.
In an existing improved process, a crystal ion implantation delamination (Crystal ion slicing, CIS) technology is adopted, and a lithium tantalate film can be formed based on a semiconductor substrate (such as a silicon substrate), so that a resonator is formed, and compatibility with a CMOS process is achieved. However, the above CIS technology has a large chip rate, high process cost, and poor surface properties of the formed lithium tantalate thin film, resulting in affecting the performance of the resonator.
There is a need for a method of forming a lithium tantalate thin film-based resonator that reduces process costs and improves the surface properties of the lithium tantalate thin film and the performance of the resonator.
Disclosure of Invention
The invention solves the technical problem of providing a resonator based on a lithium tantalate film and a forming method thereof, which can reduce the process cost and improve the surface performance of the lithium tantalate film and the performance of the resonator.
In order to solve the above technical problems, an embodiment of the present invention provides a method for forming a resonator based on a lithium tantalate thin film, including: forming a cavity on the surface of a semiconductor substrate, and filling a sacrificial layer in the cavity; forming a patterned lower plate metal layer, a portion of which covers the sacrificial layer; forming patterned Ta covering the sacrificial layer x O y Film of patterned Ta x O y The film also covers a part of the lower polar plate metal layer and a part of the semiconductor substrate; applying ion implantation process to the Ta x O y Injecting lithium ions into the film to form a patterned lithium tantalate film; performing a first annealing treatment by adopting a laser annealing process, and thinning the lithium tantalate film after the first annealing treatment; forming a patterned upper plate metal layer covering the sacrificial layer, wherein the upper plate metal layer also covers a part of the lithium tantalate film and a part of the semiconductor substrate; releasing the sacrificial layer.
Optionally, before forming the patterned upper plate metal layer covering the sacrificial layer, the method further comprises: performing second annealing treatment to repair the surface of the lithium tantalate film; and/or, after releasing the sacrificial layer, the method further comprises: and performing a third annealing treatment to reduce the stress on the surface of the lithium tantalate film.
Optionally, the process parameters of the second annealing treatment and the third annealing treatment meet one or more of the following: the second annealing treatment process is furnace tube annealing; the process temperature of the second annealing treatment is selected from the group consisting of: 350 ℃ to 500 ℃; the process duration of the second annealing treatment is selected from the following steps: 25min to 40min; the third annealing treatment process is furnace tube annealing; the process temperature of the third annealing treatment is selected from the group consisting of: 300 ℃ to 450 ℃; the process duration of the third annealing treatment is selected from the following steps: 20min to 35min; the process temperature of the third annealing treatment is lower than that of the second annealing treatment, and the process duration of the third annealing treatment is shorter than that of the second annealing treatment.
Optionally, releasing the sacrificial layer includes: forming a sacrificial layer release hole, wherein the sacrificial layer release hole penetrates through a lower polar plate metal layer, a lithium tantalate film and an upper polar plate metal layer on the surface of the sacrificial layer; releasing the sacrificial layer from the sacrificial layer release hole; wherein, after the third annealing treatment, the method further comprises: a patterned silicon dioxide film is formed that fills at least a portion of the sacrificial layer release holes.
Optionally, in the ion implantation process, the Ta is implanted x O y The method further comprises, before the thin film is implanted with lithium ions: adopts an ultraviolet ozone process to Ta x O y The film is subjected to a surface activation treatment.
Optionally, thinning the lithium tantalate film after the first annealing treatment includes: firstly, carrying out integral thinning treatment on the lithium tantalate film by adopting a CMP (chemical mechanical polishing) process; and then carrying out local thinning treatment on the lithium tantalate film by adopting a plasma grinding process.
Optionally, the process parameters of the first annealing treatment meet one or more of the following: the process temperature of the laser annealing is selected from the group consisting of: 1100 ℃ to 1300 ℃; the process duration of the laser annealing is selected from the following steps: 1ms to 3ms.
Optionally, the process parameters of the ion implantation process meet one or more of the following: the energy of the lithium ion implantation is selected from the group consisting of: 800Kev to 1000Kev; the dose of lithium ion implantation is selected from: 1.5E22 ion/cm 3 To 5E22 ion/cm 3 。
Optionally, forming patterned Ta overlying the sacrificial layer x O y A film, comprising: using tantalum organic compoundsThe organic metal precursor is injected into the reaction chamber; an oxide precursor is adopted as an oxide precursor, and is introduced into the reaction chamber to react with the organometallic precursor to generate Ta 2 O 5 A film; after the growth is finished, cooling the reaction chamber to room temperature; for the Ta 2 O 5 Etching the film to obtain patterned Ta 2 O 5 A film.
In order to solve the above technical problems, an embodiment of the present invention provides a resonator based on a lithium tantalate thin film, including: a bulk acoustic wave filter; a saw filter; the bulk acoustic wave filter is formed by the method.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the embodiment of the invention, the cavity is formed on the surface of the semiconductor substrate, and the sacrificial layer is filled in the cavity, so that the sacrificial layer can be used for supporting in the subsequent process, and the device structure (such as the lower polar plate metal layer, the lithium tantalate film and the upper polar plate metal layer) above the cavity is effectively prevented from being broken; by first forming patterned Ta x O y A film, an ion implantation process is adopted to the Ta x O y The film is implanted with lithium ions to form a patterned lithium tantalate film, so that compared with the prior art that a lithium tantalate wafer is adopted, the cost can be effectively reduced through a film deposition process and an ion implantation process, and the production efficiency is improved; the surface performance of the lithium tantalate film can be enhanced based on the annealing process by adopting the laser annealing process for the first annealing treatment, and adverse effects of a high-temperature environment on the semiconductor substrate and the lithium tantalate film just formed can be reduced due to the short process duration of the laser annealing process; by releasing the sacrificial layer, a resonant cavity of the resonator can be formed on the basis of realizing the supporting function, and the device performance is effectively realized.
Further, prior to forming the patterned upper plate metal layer overlying the sacrificial layer, the method further comprises: performing second annealing treatment to repair the surface of the lithium tantalate film; and/or, after releasing the sacrificial layer, the method further comprises: and performing a third annealing treatment to reduce the stress on the surface of the lithium tantalate film. By adopting the scheme, after the lithium tantalate film is thinned, the surface of the lithium tantalate film is repaired through the second annealing treatment, so that the surface performance of the lithium tantalate film is further enhanced; and after the sacrificial layer is released, the stress on the surface of the lithium tantalate film is reduced through a third annealing treatment, for example, the problem that a lower polar plate metal layer on the upper surface of a cavity is concave or convex due to the stress can be relieved, for example, the problems that the stress directions of an upper polar plate metal layer on the upper surface of the lithium tantalate film and a lower polar plate metal layer on the lower surface are inconsistent, the stress is nonuniform and the like can be relieved, the performance reduction of the surface of the lithium tantalate film caused by the stress problem is effectively improved, and the stress consistency and the performance of the whole resonator are improved.
Further, the second annealing treatment process is furnace tube annealing; the process temperature of the second annealing treatment is selected from the group consisting of: 350 ℃ to 500 ℃; the process duration of the second annealing treatment is selected from the following steps: 25min to 40min; the third annealing treatment process is furnace tube annealing; the process temperature of the third annealing treatment is selected from the group consisting of: 300 ℃ to 450 ℃; the process duration of the third annealing treatment is selected from the following steps: 20min to 35min; the process temperature of the third annealing treatment is lower than that of the second annealing treatment, and the process duration of the third annealing treatment is shorter than that of the second annealing treatment. By adopting the scheme, the furnace tube annealing process can be adopted to repair the surface of the lithium tantalate film for a longer time, the stress born by the surface of the lithium tantalate film can be reduced for a longer time, the repair can be carried out by adopting a longer time and a higher temperature, the damage generated on the surface of the lithium tantalate film by the thinning process can be reduced better, and after the sacrificial layer is released to form the cavity, the stress is adjusted by adopting a shorter time and a lower temperature, so that the influence on the surface of the lithium tantalate film is reduced as much as possible.
Further, the sacrificial layer release holes penetrating through the lower polar plate metal layer, the lithium tantalate film and the upper polar plate metal layer on the surface of the sacrificial layer can be formed by adopting an etching process from top to bottom, so that the process difficulty and the cost are reduced, and the patterned silicon dioxide film filling at least part of the sacrificial layer release holes can be formed after the third annealing treatment, so that the sacrificial layer release holes can be effectively sealed, a closed cavity is formed, and the quality of the resonant cavity of the resonator is improved.
Further, by adopting an ultraviolet ozone process, ta is treated by x O y The film is subjected to surface activation treatment by generating active ozone in air or oxygen atmosphere using ultraviolet light with short wavelength (for example, wavelength of about 195 nm) to make Ta x O y The surface of the film is activated, high-activity dangling bonds are exposed, the ion implantation performance is effectively improved, the good performance of the lithium tantalate film is maintained on the basis of reducing the process cost, and the surface performance of the formed lithium tantalate film is further improved.
Further, a CMP process is adopted to carry out integral thinning treatment on the lithium tantalate film; and then, carrying out local thinning treatment on the lithium tantalate film by adopting a plasma grinding (Trimming) process, so that the surface flatness of the lithium tantalate film is better, the surface stress of the lithium tantalate film is effectively reduced, and the stress consistency and the performance of the whole resonator are improved. Further, for the resonator with the surface acoustic wave filter and the bulk acoustic wave filter, due to the fact that a height difference may exist between the surface acoustic wave filter and the bulk acoustic wave filter, a concave portion is more likely to appear in the lithium tantalate film on the surface of the surface acoustic wave filter with a smaller height after the CMP process, and the thickness consistency and the surface performance of the surface of the lithium tantalate film in each area can be further improved by adopting the plasma grinding process to conduct more targeted thinning treatment on the lithium tantalate film on the surface of the surface acoustic wave filter.
Drawings
FIG. 1 is a flow chart of a method of forming a lithium tantalate thin film based resonator in accordance with an embodiment of the present invention;
fig. 2 to 10 are schematic cross-sectional views of a device corresponding to each step in a method for forming a resonator according to an embodiment of the present invention.
Reference numerals illustrate:
semiconductor substrate 20, cavity 21, sacrificial layer 22, lower plate metal layer 231, upper plate metal layer 232, ta x O y Film 241, lithium tantalate film 242, cavity 23, sacrificial layer release hole 251.
Detailed Description
In one prior art, a crystal ion implantation delamination (Crystal ion slicing, CIS) technique is used to form a lithium tantalate thin film based on a semiconductor substrate (e.g., a silicon substrate) to form a resonator, thereby achieving compatibility with CMOS processes.
In particular, a first wafer formed using a lithium tantalate material may be provided, within which a damage layer is formed that separates the first wafer into an upper piezoelectric layer and a lithium tantalate thin film layer, and a second wafer having a surface cavity may be provided, which may be formed using conventional semiconductor materials, such as silicon (Si) materials.
And bonding the front surface of the first wafer and the front surface of the second wafer, and then splitting the bonded wafer from the damage layer to remove the upper piezoelectric layer, so as to reserve a lithium tantalate film layer on the front surface of the second wafer, wherein the lithium tantalate film layer covers the cavity on the front surface of the second wafer.
According to the research, in the splitting process, the lithium tantalate thin film layer is easy to crack due to the small thickness of the lithium tantalate thin film layer.
Further, after the upper piezoelectric layer is removed, a chemical mechanical polishing (Chemical Mechanical Polishing, CMP) process is also required to grind the lithium tantalate thin film layer, and since the lower part of the lithium tantalate thin film layer is a cavity, a chip problem is likely to occur in the grinding process, resulting in excessive process cost.
Further researches also find that the surface performance of the lithium tantalate film obtained after the splitting treatment and the CMP grinding is poor, the thickness is also difficult to meet the requirements, and the performance of the resonator is also affected.
In the embodiment of the invention, the semiconductor substrate is formed on the surface of the semiconductor substrateThe cavity is formed, and the sacrificial layer is filled in the cavity, so that the sacrificial layer can be used for supporting in the subsequent process, and the device structure above the cavity (such as a lower polar plate metal layer, a lithium tantalate film and an upper polar plate metal layer) is effectively prevented from being broken; by first forming patterned Ta x O y A film, an ion implantation process is adopted to the Ta x O y The film is implanted with lithium ions to form a patterned lithium tantalate film, so that compared with the prior art that a lithium tantalate wafer is adopted, the cost can be effectively reduced through a film deposition process and an ion implantation process, and the production efficiency is improved; the surface performance of the lithium tantalate film can be enhanced based on the annealing process by adopting the laser annealing process for the first annealing treatment, and adverse effects of a high-temperature environment on the semiconductor substrate and the lithium tantalate film just formed can be reduced due to the short process duration of the laser annealing process; by releasing the sacrificial layer, a resonant cavity of the resonator can be formed on the basis of realizing the supporting function, and the device performance is effectively realized.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, fig. 1 is a flowchart of a method for forming a resonator based on a lithium tantalate thin film according to an embodiment of the present invention. The method of forming a lithium tantalate thin film-based resonator may include steps S11 to S17:
step S11: forming a cavity on the surface of a semiconductor substrate, and filling a sacrificial layer in the cavity;
step S12: forming a patterned lower plate metal layer, a portion of which covers the sacrificial layer;
step S13: forming patterned Ta covering the sacrificial layer x O y Film of patterned Ta x O y The film also covers a part of the lower polar plate metal layer and a part of the semiconductor substrate;
step S14: applying ion implantation process to the Ta x O y Thin film implantation of lithium ions to form a patternA lithium tantalate thin film;
step S15: performing a first annealing treatment by adopting a laser annealing process, and thinning the lithium tantalate film after the first annealing treatment;
step S16: forming a patterned upper plate metal layer covering the sacrificial layer, wherein the upper plate metal layer also covers a part of the lithium tantalate film and a part of the semiconductor substrate;
step S17: releasing the sacrificial layer.
The above steps are explained below with reference to fig. 2 to 10.
Fig. 2 to 10 are schematic cross-sectional views of a device corresponding to each step in a method for forming a resonator according to an embodiment of the present invention.
Referring to fig. 2, a semiconductor substrate 20 is provided, and a cavity 21 is formed on a surface of the semiconductor substrate 20.
The semiconductor substrate 20 may be a silicon substrate, or the material of the semiconductor substrate 20 may further include germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and the semiconductor substrate 20 may further be a silicon substrate on an insulator or a germanium substrate on an insulator, or a substrate grown with an epitaxial layer (Epi layer). Preferably, the semiconductor substrate 20 is a lightly doped semiconductor substrate.
In a specific implementation, a dry etching process may be used to form a cavity 21 on the surface of the semiconductor substrate 20, and an opening of the cavity 21 is located on the surface of the semiconductor substrate 20 and exposes the inside of the semiconductor substrate 20.
In one embodiment of the present invention, the lithium tantalate thin film based resonator may include a bulk acoustic wave (Bulk Acoustic Wave, BAW) filter and a saw (Surface Acoustic Wave, BAW) filter, and the region where the cavity 21 is located may be used to form the bulk acoustic wave filter.
Referring to fig. 3, a sacrificial layer 22 is filled in the cavity 231, and a patterned lower plate metal layer 231 is formed, and a portion of the lower plate metal layer 231 covers the sacrificial layer 22.
Wherein the sacrificial layer 22 may be removed in a subsequent process.
In one embodiment of the present invention, the sacrificial layer 22 may be formed using a carbon compound material that reacts at an elevated temperature and in an oxygen atmosphere to form CO x The removal is then released so that damage to the device structure over the sacrificial layer 22 is avoided as much as possible.
The lower plate metal layer 231 is used for implementing a conductive function, and the material thereof may be a conductive material, for example, may be selected from: a metal material and a polysilicon material.
More specifically, the metal material and the polysilicon material may be selected from: gold, platinum, iridium, tungsten, magnesium, molybdenum, platinum iridium alloy, titanium alloy, graphite, carbon nanotubes, polyethylene dioxythiophene PEDOT, and the like.
It should be noted that, as in the resonator shown in fig. 3, the lower plate metal layer 231 may be used to form a lower plate of the bulk acoustic wave filter, and may also be used to form a conductive metal structure other than the bulk acoustic wave filter, and an electrical signal of the lower plate metal layer 231 may be introduced or derived through the corresponding conductive metal structure.
Referring to FIG. 4, a patterned Ta layer is formed overlying the sacrificial layer 22 x O y Film 241, the patterned Ta x O y Film 241 also covers a portion of lower plate metal layer 231 and a portion of semiconductor substrate 20.
As shown in FIG. 4, ta x O y The thin film 241 may cover the lower plate metal layer 231 covered with the sacrificial layer 22.
In addition, in the resonator shown in fig. 4, ta x O y Film 241 may also cover semiconductor substrate 20 of the saw filter region.
Further, a patterned Ta layer is formed overlying the sacrificial layer x O y The step of the thin film 241 may include: adopting a tantalum organic compound as an organic metal precursor, and injecting the tantalum organic compound into a reaction chamber; an oxide precursor is adopted as an oxide precursor, and is introduced into the reaction chamber to react with the organometallic precursor to generate Ta 2 O 5 A film; after the growth is finished, the mixture isThe reaction chamber is cooled to room temperature; for the Ta 2 O 5 Etching the film to obtain patterned Ta 2 O 5 A film.
In particular embodiments, a Metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) process can be employed, employing an oxide precursor to react with the organometallic precursor to form Ta 2 O 5 A film.
In embodiments of the present invention, ta may be formed by reacting tantalum organic compounds with oxide precursors as precursors 2 O 5 Compared with the tantalum oxide film obtained by other reaction materials, the film has better material stability and film surface performance, thereby providing a good basis for further improving the surface performance of the lithium tantalate film.
Referring to fig. 5, an ion implantation process is used to implant Ta x O y The thin film 241 (refer to fig. 4) is implanted with lithium ions to form a patterned lithium tantalate thin film 242.
Further, the process parameters of the ion implantation process may satisfy one or more of the following: the energy of the lithium ion implantation is selected from the group consisting of: 800Kev to 1000Kev; the dose of lithium ion implantation is selected from: 1.5E22 ion/cm 3 To 5E22 ion/cm 3 。
It should be noted that in practice, the energy and dose of the lithium ion implantation may be adjusted according to actual requirements.
In the embodiment of the invention, an ion implantation process is adopted to the Ta x O y The film 241 is implanted with lithium ions to form a patterned lithium tantalate film 242, which is relatively high in cost compared with the prior art in which a lithium tantalate wafer is used.
Further, in the ion implantation process, the Ta is implanted x O y The method may further include, before the injecting of lithium ions into the thin film 241: for Ta x O y Film 241 is surface activatedAnd (5) performing chemical treatment.
Further, for Ta x O y The step of performing the surface activation treatment of the thin film 241 may include: adopts an ultraviolet ozone process to Ta x O y The film 241 is subjected to a surface activation treatment.
Specifically, by using the ultraviolet ozone process, ta x O y Film 241 is surface activated by generating active ozone in an atmosphere of air or oxygen using short wavelength ultraviolet light (e.g., about 195nm wavelength) such that Ta x O y The surface of film 241 is activated, exposing highly reactive dangling bonds.
It should be noted that, compared with other surface activation treatment processes, such as ozone water liquid treatment, the ultraviolet ozone process in the embodiment of the invention does not need drying or airing, so that the process efficiency can be improved and the production cost can be reduced.
In an embodiment of the invention, by making Ta x O y The surface of the thin film 241 is activated to expose a high-activity dangling bond, effectively improving ion implantation performance, maintaining good performance of the lithium tantalate thin film 242 on the basis of reducing process cost, and further improving the surface performance of the formed lithium tantalate thin film 242.
Referring to fig. 6, a first annealing process is performed using a laser annealing process.
In the embodiment of the invention, the surface performance of the lithium tantalate film 242 can be enhanced based on the annealing process by performing the first annealing treatment by adopting the laser annealing process, and the adverse effect of the high-temperature environment on the semiconductor substrate 20 and the lithium tantalate film 242 just formed can be reduced because the process duration of the laser annealing process is shorter.
Further, the process parameters of the first annealing treatment may satisfy one or more of the following: the process temperature of the laser annealing is selected from the group consisting of: 1100 ℃ to 1300 ℃; the process duration of the laser annealing is selected from the following steps: 1ms to 3ms.
In the embodiment of the invention, the influence of a high-temperature environment can be effectively reduced by adopting the millisecond (ms) level annealing process time length.
Referring to fig. 7, the lithium tantalate thin film 242 after the first annealing treatment is subjected to a thinning treatment.
In the embodiment of the invention, the thickness of the lithium tantalate film 242 can be effectively controlled by thinning the lithium tantalate film 242, so that the thickness uniformity is improved, and in addition, the surface flatness of the lithium tantalate film 242 can be improved in the thinning process.
Further, the step of thinning the lithium tantalate thin film 242 after the first annealing treatment may include: firstly, carrying out integral thinning treatment on the lithium tantalate film 242 by adopting a CMP (chemical mechanical polishing) process; and then performing local thinning treatment on the lithium tantalate film 242 by adopting a plasma grinding (Trimming) process.
The CMP process adopts a combination technique of mechanical grinding and chemical etching, and forms a smooth plane on the surface of the polished medium by means of the action of ultrafine ion grinding and the action of chemical etching of slurry, so that the surface flatness of the whole lithium tantalate film 242 is better, and the surface stress of the lithium tantalate film is effectively reduced.
The plasma grinding process is used as a fine tuning process, and the thickness can be precisely adjusted. Specifically, the surface of the lithium tantalate film 242 may be scanned to obtain an image, for example, a 3D view, and then the region to be ground and the thickness to be adjusted may be determined according to the image, and then the local leveling may be achieved by plasma bombardment.
In the embodiment of the invention, the integral thinning treatment is carried out on the lithium tantalate film by adopting a CMP process; and then, carrying out local thinning treatment on the lithium tantalate film by adopting a plasma grinding process, so that the surface flatness of the lithium tantalate film is better, and the surface stress of the lithium tantalate film is effectively reduced, thereby improving the stress consistency and performance of the whole resonator.
Further, since the thinning efficiency of the CMP process is higher than that of the plasma grinding process, the process efficiency can be improved and the process cost can be reduced by adopting both the CMP and the plasma grinding process as compared with the plasma grinding process alone.
Further, for the resonator having the saw filter and the bulk acoustic wave filter shown in fig. 7, since there may be a height difference between the saw filter and the bulk acoustic wave filter, the lithium tantalate film 242 having a smaller height of the saw filter surface is more likely to have surface deformation (e.g., dishing) after the CMP process. Compared with the polishing by only adopting the CMP process, the lithium tantalate film 242 on the surface of the surface acoustic wave filter can be thinned more specifically by adopting the plasma polishing process, so that the thickness consistency and the surface performance of the lithium tantalate film in each area are further improved.
Referring to fig. 8, a second annealing process is performed to repair the surface of the lithium tantalate thin film 242.
Further, the process parameters of the second annealing treatment may satisfy one or more of the following: the second annealing treatment process is furnace tube annealing; the process temperature of the second annealing treatment is selected from the group consisting of: 350 ℃ to 500 ℃; the process duration of the second annealing treatment is selected from the following steps: 25min to 40min.
By adopting the scheme, the furnace tube annealing process can be adopted to repair the surface of the lithium tantalate film for a longer time, so that the damage of the thinning treatment process on the surface of the lithium tantalate film is reduced better.
It should be noted that the annealing process temperature for surface repair of lithium tantalate film 242 should not be too high to avoid damage to lithium tantalate film 242 during surface repair.
By adopting the above scheme, after the lithium tantalate film is thinned, the surface of the lithium tantalate film 242 is repaired by the second annealing treatment, so as to further enhance the surface performance of the lithium tantalate film 242, thereby improving the stress consistency and performance of the whole resonator.
Referring to fig. 9, a patterned upper plate metal layer 232 is formed overlying the sacrificial layer 22, the upper plate metal layer 232 also overlying a portion of the lithium tantalate film 242 and a portion of the semiconductor substrate 20.
The material selection range of the upper plate metal layer 232 may refer to the material of the lower plate metal layer 231, which is not described herein.
The material of the upper plate metal layer 232 may or may not be identical to the material of the lower plate metal layer 231.
As shown in fig. 9, the upper plate metal layer 232 may cover the lithium tantalate film 242 covered with the sacrificial layer 22.
In addition, in the resonator shown in fig. 9, the upper plate metal layer 232 may also cover a portion of the lithium tantalate film 242 and a portion of the semiconductor substrate 20 of the saw filter region.
The upper plate metal layer 232 may be used to form upper plates of the bulk acoustic wave filter and the saw filter, and may also be used to form conductive metal structures other than the bulk acoustic wave filter and the saw filter, and electrical signals of the upper plate metal layer 232 may be led in or out through the corresponding conductive metal structures.
Referring to fig. 10, the sacrificial layer 22 (refer to fig. 9) is released, resulting in a cavity 23.
Further, the step of releasing the sacrificial layer 22 may include: forming a sacrificial layer release hole 251, wherein the sacrificial layer release hole 251 penetrates through the lower electrode plate metal layer 231, the lithium tantalate film 242 and the upper electrode plate metal layer 232 on the surface of the sacrificial layer; the sacrificial layer 22 is released from the sacrificial layer release hole 251.
Further, the sacrificial layer release hole 251 is formed using an etching process from top to bottom.
In the embodiment of the invention, the lower electrode plate metal layer 231, the lithium tantalate film 242 and the sacrificial layer release hole 251 of the upper electrode plate metal layer 232 penetrating through the surface of the sacrificial layer can be formed by adopting an etching process from top to bottom.
Wherein the sacrificial layer 22 may be released from the sacrificial layer release hole 251 using an appropriate process. As previously described, the sacrificial layer 22 may be formed using a carbon compound material, and then, during the releasing step, may be at an elevated temperatureReact in oxygen atmosphere to generate CO x (e.g., carbon dioxide) is then released for removal so that damage to the device structure over the sacrificial layer 22 is avoided as much as possible.
Further, after releasing the sacrificial layer 22, the method may further include: a third annealing process is performed to reduce the stress to which the surface of the lithium tantalate thin film 242 is subjected.
In an embodiment, after releasing the sacrificial layer 22, the upper surface of the cavity 23 is the bottom plate metal layer 231, which may be concave or convex due to stress.
In addition, there may be inconsistencies in the stress (tensile or compressive) generated by the upper plate metal layer 232 and the stress generated by the lower plate metal layer 231, such as in the direction, or in the magnitude of the stress.
In the embodiment of the present invention, through the third annealing treatment, not only the surface performance of the lithium tantalate film 242 may be further repaired, but also the stress on the surface of the lithium tantalate film 242 may be reduced, for example, the problem that the lower electrode plate metal layer on the upper surface of the cavity is concave or convex due to the stress may be reduced, and for example, the problems that the stress directions of the upper electrode plate metal layer on the upper surface of the lithium tantalate film and the lower electrode plate metal layer on the lower surface are inconsistent, the stress magnitude is not uniform, and the like may be reduced.
Further, the process parameters of the third annealing treatment may satisfy one or more of the following: the third annealing treatment process is furnace tube annealing; the process temperature of the third annealing treatment is selected from the group consisting of: 300 ℃ to 450 ℃; the process duration of the third annealing treatment is selected from the following steps: 20min to 35min; the process temperature of the third annealing treatment is lower than that of the second annealing treatment, and the process duration of the third annealing treatment is shorter than that of the second annealing treatment.
In the embodiment of the present invention, after the sacrificial layer is released to form the cavity, a furnace tube annealing process may be used to anneal the lithium tantalate film 242, so as to reduce the stress on the surface of the lithium tantalate film 242.
It should be noted that the annealing process temperature for performing stress adjustment on the lithium tantalate film 242 should not be too low, and the annealing process duration should not be too short, so as to avoid the effect of not achieving the stress adjustment; the annealing process temperature for stress adjustment of the lithium tantalate film 242 should not be too high, and the annealing process time should not be too long, so as to avoid damage to the lithium tantalate film 242 during the stress adjustment.
The process temperature of the third annealing treatment is lower than that of the second annealing treatment, and the process duration of the third annealing treatment is shorter than that of the second annealing treatment. By adopting the above scheme, the furnace tube annealing process can be adopted to repair the surface of the lithium tantalate film 242 for a longer time, the stress on the surface of the lithium tantalate film 242 can be reduced for a longer time, the repair can be carried out for a longer time and at a higher temperature, so as to better reduce the damage on the surface of the lithium tantalate film 242 caused by the thinning process, and after the sacrificial layer 22 is released to form the cavity, the stress is adjusted by adopting a shorter time and a lower temperature, so that the influence on the surface of the lithium tantalate film 242 is reduced as much as possible.
It should be noted that, in the embodiment of the present invention, the second annealing process and the third annealing process are used to continuously improve the surface properties of the lithium tantalate thin film 242, especially after the step of reducing the damage, which is a major step, and after the step of etching to form the sacrificial layer release hole and release the sacrificial layer 22, which is a major step. The second annealing process and the third annealing process are adopted, so that the extremely short process duration can be adopted in the process of the first annealing process, and the process duration is not only millisecond-level duration but also less than or equal to 3 milliseconds.
In the embodiment of the present invention, the surface of the lithium tantalate film 242 may be repaired by the second annealing treatment, so as to further enhance the surface performance of the lithium tantalate film 242; the third annealing treatment may be further used to reduce the stress on the surface of the lithium tantalate film 242, for example, to reduce the problem of the concave or convex shape of the lower electrode plate metal layer 231 on the upper surface of the cavity due to the stress, and for example, to reduce the problem of uneven or inconsistent stress directions of the upper electrode plate metal layer 232 on the upper surface of the lithium tantalate film 242 and the lower electrode plate metal layer 231 on the lower surface, so as to effectively improve the performance degradation of the surface of the lithium tantalate film 242 due to the stress problem, and improve the stress uniformity and performance of the whole resonator.
Further, after performing the third annealing treatment, the method may further include: a patterned silicon dioxide film (not shown) is formed, which fills at least a portion of the sacrificial layer release holes.
In the resonator shown in fig. 10, the saw filter may include a lithium tantalate film 242 and an upper plate metal layer 232, the upper plate metal layer 232 partially covering the lithium tantalate film 242. The patterned silicon dioxide film may cover the upper plate metal layer 232 and the lithium tantalate film 242 on the saw filter to better protect the surface of the saw filter.
In the embodiment of the invention, after the third annealing treatment is performed, the patterned silicon dioxide film filling at least part of the sacrificial layer release hole is formed, so that the sacrificial layer release hole can be effectively sealed, a closed cavity is formed, and the quality of the resonant cavity of the resonator is improved.
In the embodiment of the invention, by forming the cavity 21 (refer to fig. 2) on the surface of the semiconductor substrate 20 and filling the sacrificial layer 22 in the cavity 21, the sacrificial layer 22 can be used for supporting in the subsequent process, so that the device structure (such as the lower polar plate metal layer 231, the lithium tantalate film 242 and the upper polar plate metal layer 232) above the cavity 21 is effectively prevented from being broken; by first forming patterned Ta x O y Film 241 (see FIG. 4) is then implanted into the Ta using an ion implantation process x O y The film 241 is implanted with lithium ions to form a patterned lithium tantalate film 242, which can effectively reduce the cost and improve the production efficiency by a film deposition process and an ion implantation process compared with the prior art that a lithium tantalate wafer is adopted; by performing the first annealing treatment by using the laser annealing process, the surface properties of the lithium tantalate thin film 242 may be enhanced based on the annealing process, and since the process duration of the laser annealing process is short, the high temperature environment may also be reducedAdverse effects on the semiconductor substrate 20 and the lithium tantalate film 242 just formed; by releasing the sacrificial layer 22, a resonant cavity of the resonator can be formed on the basis of realizing the supporting function, effectively realizing the device performance.
In an embodiment of the present invention, there is further provided a resonator based on a lithium tantalate thin film, as shown in fig. 10, which may include: a bulk acoustic wave filter; a saw filter; wherein the bulk acoustic wave filter may be formed using the resonator formation methods described above and illustrated in fig. 2-10.
In the resonator, the sensing layer is a lithium tantalate film 242 formed by ion implantation based on a semiconductor substrate, the device volume is highly controllable, and the resonator is compatible with a CMOS process.
In addition, the resonator can integrate the bulk acoustic wave filter and the surface acoustic wave filter at the same time, and has the advantages of high integration level, wide filtering range, wide application and lower cost.
It will be appreciated that since the layers included in both the saw filter and the bulk acoustic wave filter may be fabricated using the same process, the various processes employed in embodiments of the present invention to improve the surface properties of the lithium tantalate film 242 also enhance the device performance of the saw filter.
It should be understood that the term "and/or" is merely an association relationship describing the associated object, and means that three relationships may exist, for example, a and/or B may mean: a exists alone, A and B exist together, and B exists alone. In this context, the character "/" indicates that the front and rear associated objects are an "or" relationship.
The term "plurality" as used in the embodiments herein refers to two or more.
The first, second, etc. descriptions in the embodiments of the present application are only used for illustrating and distinguishing the description objects, and no order division is used, nor does it indicate that the number of the devices in the embodiments of the present application is particularly limited, and no limitation on the embodiments of the present application should be construed.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (10)
1. A method for forming a lithium tantalate thin film based resonator, comprising:
forming a cavity on the surface of a semiconductor substrate, and filling a sacrificial layer in the cavity;
forming a patterned lower plate metal layer, a portion of which covers the sacrificial layer;
forming patterned Ta covering the sacrificial layer x O y Film of patterned Ta x O y The film also covers a part of the lower polar plate metal layer and a part of the semiconductor substrate;
applying ion implantation process to the Ta x O y Injecting lithium ions into the film to form a patterned lithium tantalate film;
performing a first annealing treatment by adopting a laser annealing process, and thinning the lithium tantalate film after the first annealing treatment;
forming a patterned upper plate metal layer covering the sacrificial layer, wherein the upper plate metal layer also covers a part of the lithium tantalate film and a part of the semiconductor substrate;
releasing the sacrificial layer;
wherein the Ta is x O y The thin film is formed by reacting an oxide precursor with an organometallic precursor.
2. The method of claim 1, wherein the step of determining the position of the substrate comprises,
before forming the patterned upper plate metal layer overlying the sacrificial layer, the method further comprises:
performing second annealing treatment to repair the surface of the lithium tantalate film;
and/or the number of the groups of groups,
after releasing the sacrificial layer, the method further comprises:
and performing a third annealing treatment to reduce the stress on the surface of the lithium tantalate film.
3. The method of claim 2, wherein the process parameters of the second and third annealing treatments meet one or more of the following:
the second annealing treatment process is furnace tube annealing;
the process temperature of the second annealing treatment is selected from the group consisting of: 350 ℃ to 500 ℃;
the process duration of the second annealing treatment is selected from the following steps: 25min to 40min;
the third annealing treatment process is furnace tube annealing;
the process temperature of the third annealing treatment is selected from the group consisting of: 300 ℃ to 450 ℃;
the process duration of the third annealing treatment is selected from the following steps: 20min to 35min;
the process temperature of the third annealing treatment is lower than that of the second annealing treatment, and the process duration of the third annealing treatment is shorter than that of the second annealing treatment.
4. The method of claim 2, wherein releasing the sacrificial layer comprises:
forming a sacrificial layer release hole, wherein the sacrificial layer release hole penetrates through a lower polar plate metal layer, a lithium tantalate film and an upper polar plate metal layer on the surface of the sacrificial layer;
releasing the sacrificial layer from the sacrificial layer release hole;
wherein, after the third annealing treatment, the method further comprises:
a patterned silicon dioxide film is formed that fills at least a portion of the sacrificial layer release holes.
5. The method according to claim 1 or 2, wherein the Ta is implanted by an ion implantation process x O y Film injectionThe method further comprises, before lithium ion insertion:
adopts an ultraviolet ozone process to Ta x O y The film is subjected to a surface activation treatment.
6. The method according to claim 1 or 2, wherein the thinning of the lithium tantalate film after the first annealing treatment includes:
firstly, carrying out integral thinning treatment on the lithium tantalate film by adopting a CMP (chemical mechanical polishing) process;
and then carrying out local thinning treatment on the lithium tantalate film by adopting a plasma grinding process.
7. The method according to claim 1 or 2, characterized in that the process parameters of the first annealing treatment fulfil one or more of the following:
the process temperature of the laser annealing is selected from the group consisting of: 1100 ℃ to 1300 ℃;
the process duration of the laser annealing is selected from the following steps: 1ms to 3ms.
8. The method of claim 1 or 2, wherein the process parameters of the ion implantation process meet one or more of the following:
the energy of the lithium ion implantation is selected from the group consisting of: 800Kev to 1000Kev;
the dose of lithium ion implantation is selected from: 1.5E22 ion/cm 3 To 5E22 ion/cm 3 。
9. The method of claim 1, wherein forming patterned Ta covers the sacrificial layer x O y A film, comprising:
adopting a tantalum organic compound as an organic metal precursor, and injecting the tantalum organic compound into a reaction chamber;
an oxide precursor is adopted as an oxide precursor, and is introduced into the reaction chamber to react with the organometallic precursor to generate Ta 2 O 5 A film;
after the growth is finished, cooling the reaction chamber to room temperature;
for the Ta 2 O 5 Etching the film to obtain patterned Ta 2 O 5 A film.
10. A lithium tantalate thin film based resonator comprising:
a bulk acoustic wave filter;
a saw filter;
wherein the bulk acoustic wave filter is formed using the method of any one of claims 1 to 9.
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