CN117153666A - Cleaning process of tellurium-zinc-cadmium wafer - Google Patents
Cleaning process of tellurium-zinc-cadmium wafer Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 27
- 239000000243 solution Substances 0.000 claims abstract description 71
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 26
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 24
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011259 mixed solution Substances 0.000 claims abstract description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000002791 soaking Methods 0.000 claims abstract description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 9
- 239000012670 alkaline solution Substances 0.000 claims abstract description 8
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000011010 flushing procedure Methods 0.000 claims description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000002351 wastewater Substances 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 71
- 230000000052 comparative effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004018 waxing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- -1 metal compound ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application belongs to the field of semiconductor substrate manufacturing, and discloses a cleaning process of a tellurium-zinc-cadmium wafer. The method comprises the following steps: placing the polished and waxed wafer into alkaline solution for soaking treatment; placing the wastewater into an S1 cleaning solution for cleaning, wherein the S1 cleaning solution is a mixed solution of hydrogen peroxide, nitric acid and water; placing the wastewater into an S2 cleaning solution for cleaning, wherein the S2 cleaning solution is a mixed solution of hydrogen peroxide and ammonium hydroxide; placing the wastewater into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is a mixed solution of hydrochloric acid, hydrofluoric acid and water; placing the wastewater into an S4 cleaning solution for cleaning, wherein the S4 cleaning solution is a mixed solution of phosphoric acid and/or sulfurous acid and water; placing the mixture in an organic solution for cleaning treatment; and (5) drying. The cleaning process can improve the yield of products and reduce the production cost.
Description
Technical Field
The application belongs to the field of semiconductor substrate manufacturing, and relates to a cleaning process of a tellurium-zinc-cadmium wafer.
Background
At present, with the development and use of tellurium-zinc-cadmium detectors, high-efficiency detectors for acquiring high-performance photons are possible, with the continuous improvement of high-quality CdZnTe semiconductor crystal preparation technology, carrier collection processes are further understood deeply, and low-noise microelectronics are rapidly developed, so that the CdZnTe detectors can be applied to wider fields.
In the production process of tellurium-zinc-cadmium wafer substrates, various bonding adhesives, grinding materials, cooling liquid, polishing wax, polishing liquid and other chemicals are required to be used in large quantities in the processes of cutting, grinding and the like, and various stains are inevitably brought to the wafers. At this time, the cleaning of the tellurium-zinc-cadmium wafer is particularly critical. After the tellurium-zinc-cadmium wafer is cleaned, the surface quality of the tellurium-zinc-cadmium wafer directly influences the quality of an epitaxial layer, so that the performance of a tellurium-zinc-cadmium-based device is influenced, and besides the substrate material is required to meet the requirements of customers to ensure the performance quality, the surface quality of the substrate wafer is required to meet the use requirements of the customers and is matched with the MOCVD process of the customers.
The existing cleaning process has the following problems: after cleaning, the surface of the wafer can be corroded, so that the surface of the wafer is more in particles and overlarge in roughness, a thicker oxide film can be formed on the surface of the wafer, meanwhile, uncontrollable white fog defects can be generated on the surface of the wafer, the content of surface impurities exceeds the standard and is not in accordance with the requirements, the overall yield is low, and the production cost is high.
Disclosure of Invention
Aiming at the problems in the prior art, the application aims to provide a cleaning process for tellurium-zinc-cadmium wafers, which has high yield and low production cost. The cleaning process can ensure the cleanliness of the wafer surface, does not damage the roughness of the polished wafer, reduces the thickness of the cleaned oxide layer, avoids the formation of white fog defects on the wafer surface, and effectively controls the impurity content on the surface.
In order to achieve the above purpose, the technical scheme adopted by the application is as follows:
a cleaning process of tellurium-zinc-cadmium wafers comprises the following steps:
(1) Placing the polished and waxed wafer into an alkaline solution for soaking treatment, wherein the alkaline solution is at least one of tetramethylammonium hydroxide solution, sodium hydroxide solution and potassium hydroxide solution;
(2) Placing the wafer processed in the step (1) into an S1 cleaning solution for cleaning, wherein the S1 cleaning solution is a mixed solution of hydrogen peroxide, nitric acid and water;
(3) Placing the wafer treated in the step (2) into an S2 cleaning solution for cleaning treatment, wherein the S2 cleaning solution is a mixed solution of hydrogen peroxide and ammonium hydroxide;
(4) Placing the wafer processed in the step (3) into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is a mixed solution of hydrochloric acid, hydrofluoric acid and water;
(5) Placing the wafer treated in the step (4) into an S4 cleaning solution for cleaning treatment, wherein the S4 cleaning solution is a mixed solution of phosphoric acid and/or sulfurous acid and water;
(6) Placing the wafer treated in the step (5) into an organic solution for cleaning treatment;
(7) And (3) drying the wafer treated in the step (6).
The cleaning process of the application creatively introduces the S1 cleaning solution, the S2 cleaning solution, the S3 cleaning solution and the S4 cleaning solution to clean the tellurium-zinc-cadmium wafer: step (1) removing organics and metal ions using an alkaline solution, such as tetramethylammonium hydroxide; the step (2) is to set a cleaning solution of strong oxidizing acid, which has good removal effect on most metal elements; setting oxidation and alkalescence cleaning agents to effectively remove small-particle organic matters; in the step (4), the cleaning agent mixes hydrochloric acid and hydrofluoric acid together, so that the corrosiveness of the hydrofluoric acid is reduced, and the removal efficiency of silicon dioxide is ensured; the cleaning agent in the step (5) can effectively remove silicon dioxide on the surface of the wafer; in steps (6) and (7), the wafer is cleaned and dried.
Further, in the step (1), the soaking treatment temperature is 20-30 ℃; soaking treatment lasts for 20-40 s; the pH value of the alkaline solution is more than or equal to 12.5.
Further, in the step (2), the volume ratio of hydrogen peroxide, nitric acid and water in the S1 cleaning solution is 1: 1-2: 2-8; the cleaning treatment temperature is 5-10 ℃; the cleaning treatment time is 20-60 s; the mass concentration of the hydrogen peroxide for configuration is more than or equal to 30.0 percent, and the mass concentration of the nitric acid for configuration is more than or equal to 69.0 percent.
Further preferably, the concentration of hydrogen peroxide used for the arrangement is 30.0 to 32.0% by mass, and the concentration of nitric acid used for the arrangement is 69.0 to 72.0% by mass.
Further, in the step (3), the volume ratio of hydrogen peroxide to ammonium hydroxide in the S2 cleaning solution is 1: 1-10; the cleaning treatment time is 30-60 s; the mass concentration of the hydrogen peroxide for configuration is more than or equal to 30.0 percent, and the mass concentration of the ammonium hydroxide for configuration is more than or equal to 28 percent.
Further preferably, the mass concentration of the hydrogen peroxide used for the arrangement is 30.0 to 32.0%, and the mass concentration of the ammonium hydroxide used for the arrangement is 28 to 30.0%.
Further, in the step (4), the volume ratio of hydrochloric acid, hydrofluoric acid and water in the S3 cleaning solution is 3-7: 1-10: 40-50, and cleaning treatment time is 30-60 s; the mass concentration of hydrochloric acid used for configuration is more than or equal to 36.0%, and the mass concentration of hydrofluoric acid used for configuration is more than or equal to 48.8%.
Further preferably, the mass concentration of the hydrochloric acid used for the arrangement is 36.0 to 38.0%, and the mass concentration of the hydrofluoric acid used for the arrangement is 48.8 to 49.2%.
Further, in the step (5), the volume ratio of phosphoric acid to water in the S4 cleaning solution is 1: 1-10, and cleaning treatment time is 30-60 s; the mass concentration of phosphoric acid used for configuration is more than or equal to 85.0 percent.
Further, in step (6), the organic solution is an isopropanol solution. It is further preferred that the step (6) specifically comprises: and placing the wafer in an isopropanol solution, and washing twice, wherein the washing time is 30-60 s each time.
Further, the drying in the step (7) specifically comprises the following steps: and placing the wafer into a drying chamber, wherein the drying time is 30-220 s.
Further, in the steps (2), (3) and (4), the cleaning treatment temperature is 25 ℃ or lower.
Further, in the steps (1) - (6), clear water flushing treatment is arranged between the adjacent steps, and the flushing is specifically as follows: and placing the wafer in a water flushing tank for flushing for 30-60 s.
Compared with the prior art, the application has the beneficial effects that:
(1) According to the cleaning process disclosed by the application, through introducing the S1 cleaning solution, the S2 cleaning solution, the S3 cleaning solution and the S4 cleaning solution, metal compound ions, organic particles, heavy metals and inorganic impurities on the surface of the tellurium-zinc-cadmium wafer substrate can be effectively removed, the cleanliness of the surface of the wafer is ensured, meanwhile, the roughness of the polished wafer is not damaged in the cleaning process, the thickness of an oxide layer can be reduced, the surface haze is controlled, and the content of the surface impurities is also effectively controlled. The surface quality of the substrate is optimized and improved, and the purpose of customer use is met.
(2) The cleaning process can obviously improve the yield of products and greatly reduce the production cost.
Detailed Description
The present application will be described more fully hereinafter with reference to the preferred embodiments of the present application in order to facilitate the understanding of the present application, but the scope of the present application is not limited to the following specific embodiments.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present application.
The concentrations of the components used in the respective examples and comparative examples of the present application are as follows:
hydrogen peroxide with a mass concentration of 30.0%;
nitric acid with a mass concentration of 69.0%;
ammonium hydroxide, the mass concentration is 28%;
hydrochloric acid with a mass concentration of 36.0%;
hydrofluoric acid with a mass concentration of 48.8%;
phosphoric acid with a mass concentration of 85.0%;
tetramethylammonium hydroxide solution, pH 12.5.
Example 1
The embodiment discloses a cleaning process of tellurium-zinc-cadmium wafers, which comprises the following steps:
(1) Selecting 20 tellurium zinc cadmium wafers which are polished by a waxing and polishing process and waxed, and soaking the wafers in an aqueous solution of tetramethyl ammonium hydroxide with the pH value of 12.5 and the temperature of 25 ℃ for 30s; immediately flush with the flush tank, flush time of the flush tank is 40s.
(2) Placing the wafer processed in the step (1) into an S1 cleaning solution for cleaning treatment, and then placing the wafer into a water flushing tank for flushing for 30S, wherein the S1 cleaning solution is a mixed solution of hydrogen peroxide, nitric acid and water; the volume ratio of hydrogen peroxide, nitric acid and water in the S1 cleaning solution is 1:1:8, 8; the cleaning treatment temperature is 8 ℃; the cleaning treatment time was 40s.
(3) Placing the wafer processed in the step (2) into an S2 cleaning solution for cleaning treatment, then placing the wafer into a water flushing tank for flushing for 30S, wherein the volume ratio of hydrogen peroxide to ammonium hydroxide in the S2 cleaning solution is 1:1, a step of; the cleaning treatment time is 60s; the cleaning treatment temperature was 25 ℃.
(4) Placing the wafer processed in the step (3) into an S3 cleaning solution for cleaning treatment, then placing the wafer into a water flushing tank for flushing for 30S, wherein the volume ratio of hydrochloric acid, hydrofluoric acid and water in the S3 cleaning solution is 7:3:40, cleaning treatment time is 30s; the cleaning treatment temperature was 25 ℃.
(5) Placing the wafer processed in the step (4) into an S4 cleaning solution for cleaning, then placing the wafer into a water flushing tank for flushing for 30S, wherein the volume ratio of phosphoric acid to water in the S4 cleaning solution is 1:1, cleaning treatment time is 30-60 s; the cleaning treatment temperature was 25 ℃.
(6) Placing the wafer treated in the step (5) in isopropanol solution for washing twice, wherein the first washing time is 30s, and the second washing time is 60s;
(7) And (3) drying the wafer treated in the step (6) by hot nitrogen at 60 ℃, and packaging and delivering the wafer after the dried wafer is inspected to be qualified.
Comparative example 1
The comparative example discloses a cleaning process of tellurium-zinc-cadmium wafers, which comprises the following steps:
(1) 10 tellurium-zinc-cadmium wafers which are polished by a waxing and polishing process and waxed are selected, one tellurium-zinc-cadmium wafer is sequentially taken out and clamped by a cleaning clamp, and soaked in sulfuric acid at 65 ℃ for 5s.
(2) Soaking the wafer soaked in the step (1) in sulfuric acid at 25 ℃ for 3s; then put into the bowl, and use the water gun to wash the bowl and keep the water overflow state at the same time, wash time 45s.
(3) Placing the wafer processed in the step (2) into an S1 cleaning solution for cleaning, wherein the volume ratio of hydrogen peroxide, nitric acid and water in the S1 cleaning solution is 1:2:3, a step of; the cleaning treatment temperature is 4 ℃; the cleaning treatment time is 60s, the wafer is continuously rotated in the cleaning process, so that the liquid on the surface of the wafer is uniformly received, then the wafer is washed by a water gun, and the cleaning time is as follows: 45s.
(4) Placing the wafer treated in the step (3) into an S2 cleaning solution for cleaning treatment, wherein the volume ratio of hydrogen peroxide to ammonium hydroxide in the S2 cleaning solution is 3:7, preparing a base material; the cleaning treatment time is 30s, the cleaning temperature is normal temperature, then the cleaning time is that the cleaning gun is used for flushing: 45s.
(5) Placing the wafer processed in the step (4) into an S3 cleaning solution for cleaning, wherein the volume ratio of hydrochloric acid, hydrofluoric acid and water in the S3 cleaning solution is 3:1:40, cleaning treatment time is 45s; the cleaning temperature is normal temperature.
(6) Placing the wafer cleaned in the step (5) into an overflow tank, and simultaneously flushing the overflow tank by using a water gun to keep a water overflow state, wherein the cleaning time is as follows: 30s.
(7) Soaking in hydrogen peroxide at normal temperature for 30s, flushing with a water gun, and cleaning for a period of time: 45s.
(8) And spin-drying each wafer after cleaning, storing in a blocking box dried by nitrogen, and packaging and delivering after the wafer is inspected to be qualified.
Examples 2 to 5
To verify the cleaning effect, examples 2 to 5 were consistent with example 1.
Comparative examples 2 to 5
To compare the cleaning effect, comparative examples 2 to 5 were consistent with comparative example 1.
The wafers cleaned in examples 1 to 5 and comparative examples 1 to 5 were tested, and the results are shown in table 1, and the specific test procedure is as follows:
and randomly selecting two cleaned tellurium-zinc-cadmium wafer substrate finished products for each experimental group, detecting the number of the bright spots on the tellurium-zinc-cadmium wafer substrate by using a strong light lamp, and respectively taking an average value for each experimental group.
And randomly selecting two cleaned tellurium-zinc-cadmium wafer substrate finished products for each experimental group, detecting the thickness of an oxide layer on the tellurium-zinc-cadmium wafer substrate by using an ellipsometer, and taking an average value for each experimental group respectively.
And randomly selecting two cleaned tellurium-zinc-cadmium wafer substrate finished products from each experimental group, testing the silicon content on the tellurium-zinc-cadmium wafer substrate by using TOF-SIMS surface analysis, and respectively taking an average value from each experimental group.
The judgment standard of the yield is as follows: the strong light lamp checks whether scratch, damage, liquid medicine and the like exist on the surface of each wafer.
TABLE 1
It can be seen that the tellurium-zinc-cadmium wafer cleaning process can effectively improve the cleaning effect of the wafer surface.
The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the present application.
Claims (10)
1. The cleaning process of the tellurium-zinc-cadmium wafer is characterized by comprising the following steps of:
(1) Placing the polished and waxed wafer into an alkaline solution for soaking treatment, wherein the alkaline solution is at least one of tetramethylammonium hydroxide solution, sodium hydroxide solution and potassium hydroxide solution;
(2) Placing the wafer processed in the step (1) into an S1 cleaning solution for cleaning, wherein the S1 cleaning solution is a mixed solution of hydrogen peroxide, nitric acid and water;
(3) Placing the wafer treated in the step (2) into an S2 cleaning solution for cleaning treatment, wherein the S2 cleaning solution is a mixed solution of hydrogen peroxide and ammonium hydroxide;
(4) Placing the wafer processed in the step (3) into an S3 cleaning solution for cleaning, wherein the S3 cleaning solution is a mixed solution of hydrochloric acid, hydrofluoric acid and water;
(5) Placing the wafer treated in the step (4) into an S4 cleaning solution for cleaning treatment, wherein the S4 cleaning solution is a mixed solution of phosphoric acid and/or sulfurous acid and water;
(6) Placing the wafer treated in the step (5) into an organic solution for cleaning treatment;
(7) And (3) drying the wafer treated in the step (6).
2. The cleaning process according to claim 1, wherein in the step (1), the soaking treatment temperature is 20-30 ℃; soaking treatment lasts for 20-40 s; the pH value of the alkaline solution is more than or equal to 12.5.
3. The cleaning process according to claim 1, wherein in step (2), the volume ratio of hydrogen peroxide, nitric acid and water in the S1 cleaning solution is 1: 1-2: 2-8; the cleaning treatment temperature is 5-10 ℃; the cleaning treatment time is 20-60 s; the mass concentration of the hydrogen peroxide for configuration is more than or equal to 30.0 percent, and the mass concentration of the nitric acid for configuration is more than or equal to 69.0 percent.
4. The cleaning process of claim 1, wherein in step (3), the volume ratio of hydrogen peroxide to ammonium hydroxide in the S2 cleaning solution is 1: 1-10; the cleaning treatment time is 30-60 s; the mass concentration of the hydrogen peroxide for configuration is more than or equal to 30.0 percent, and the mass concentration of the ammonium hydroxide for configuration is more than or equal to 28 percent.
5. The cleaning process according to claim 1, wherein in the step (4), the volume ratio of hydrochloric acid, hydrofluoric acid and water in the S3 cleaning solution is 3 to 7: 1-10: 40-50, and cleaning treatment time is 30-60 s; the mass concentration of hydrochloric acid used for configuration is more than or equal to 36.0%, and the mass concentration of hydrofluoric acid used for configuration is more than or equal to 48.8%.
6. The cleaning process of claim 1, wherein in step (5), the volume ratio of phosphoric acid to water in the S4 cleaning solution is 1: 1-10, and cleaning treatment time is 30-60 s; the mass concentration of phosphoric acid used for configuration is more than or equal to 85.0 percent.
7. The cleaning process of claim 1, wherein in step (6), the organic solution is an isopropyl alcohol solution; the specific operation is as follows: and placing the wafer in an isopropanol solution, and washing twice, wherein the washing time is 30-60 s each time.
8. The cleaning process according to claim 1, wherein the drying in step (7) is specifically: and placing the wafer into a drying chamber, wherein the drying time is 30-220 s.
9. The cleaning process according to claim 1, wherein in the steps (2), (3) and (4), the cleaning treatment temperature is 25 ℃ or lower.
10. The cleaning process according to claim 1, wherein in the steps (1) to (6), a clean water flushing treatment is provided between the adjacent steps, and the flushing is specifically as follows: and placing the wafer in a water flushing tank for flushing for 30-60 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311045992.5A CN117153666A (en) | 2023-08-18 | 2023-08-18 | Cleaning process of tellurium-zinc-cadmium wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311045992.5A CN117153666A (en) | 2023-08-18 | 2023-08-18 | Cleaning process of tellurium-zinc-cadmium wafer |
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| Publication Number | Publication Date |
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| CN117153666A true CN117153666A (en) | 2023-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202311045992.5A Pending CN117153666A (en) | 2023-08-18 | 2023-08-18 | Cleaning process of tellurium-zinc-cadmium wafer |
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| Country | Link |
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| CN (1) | CN117153666A (en) |
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- 2023-08-18 CN CN202311045992.5A patent/CN117153666A/en active Pending
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