CN117075257B - TE (TE)0Mode and TE1Mode power equalizer - Google Patents
TE (TE)0Mode and TE1Mode power equalizer Download PDFInfo
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- CN117075257B CN117075257B CN202311137559.4A CN202311137559A CN117075257B CN 117075257 B CN117075257 B CN 117075257B CN 202311137559 A CN202311137559 A CN 202311137559A CN 117075257 B CN117075257 B CN 117075257B
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- mode
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- offset
- input end
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- 238000005253 cladding Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12154—Power divider
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the field of integrated optics, and particularly relates to a TE 0 mode and TE 1 mode power equalizer. The invention comprises a lower cladding, a silicon core and an upper cladding; the silicon core is arranged at the top end of the lower cladding; the refractive index of the silicon core, n Si = 3.455, the height, h 2 =220 nm, the input end width, W I =0.45 μm, the output end width, W O =1.5 μm, the offset width between the center of the input end and the center of the output end, W offset =315.5 nm, the length of the input end, L I, the length of the intermediate tapered waveguide, l=0, and the length of the output end, L O. The power divider of the invention can convert the TE 0 mode of the input end into the TE 0 mode and the TE 1 mode of the output end. The TE 0 mode and TE 1 mode power divider provided by the invention can realize the power average distribution of the TE 0 mode and the TE 1 mode at the output end.
Description
Technical Field
The invention belongs to the field of integrated optics, and particularly relates to a TE 0 mode and TE 1 mode power equalizer.
Background
Photonic integrated chips have undergone a technological transition from unit devices to scale integration, and the development of large-scale photonic integrated chips is one of the most competitive fields internationally. The transmission structure for transmitting different modes is designed under different requirements, so that the requirements of different situations can be met. In the design of photonic integrated chips, it is often necessary to uniformly convert the emitted TE 0 modes into TE 0 and TE 1 modes at different waveguide widths, i.e., to keep the power of both equal, and thus into different modules. Since different modes coexist in the same space, unavoidable crosstalk is caused, and thus energy difference between the different modes is caused, so it is not easy to design a power equalizer capable of equally dividing power of the TE 0 mode and the TE 1 mode.
Disclosure of Invention
The invention aims to solve the technical problems and provide a TE 0 mode and TE 1 mode power divider, which aims to realize uniform conversion of a transmitted TE 0 mode into a TE 0 mode and a TE 1 mode at different waveguide widths.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is as follows:
A TE 0 mode and TE 1 mode power equalizer comprises a lower cladding, a silicon core and an upper cladding; the silicon core is arranged at the top end of the lower cladding; the refractive index of the silicon core, n Si = 3.455, the height, h 2 =220 nm, the input end width, W I =0.45 μm, the output end width, W O =1.5 μm, the offset width between the center of the input end and the center of the output end, W offset, the length of the input end, L I, the length of the intermediate tapered waveguide, L, and L O.
Further, as a preferable technical scheme of the invention, the material of the lower cladding layer is SiO 2, the refractive index n SiO2 =1.445, the height h 1 =500 nm, and the width W 0>WO.
Further, as a preferable embodiment of the present invention, the length of the tapered waveguide between the input end and the output end is set to l=0.
Further as a preferred embodiment of the present invention, the offset width between the center of the input end and the center of the output end needs to be set to W offset =315.5 nm
Further, according to a preferred embodiment of the present invention, the upper cladding layer is air.
Compared with the prior art, the TE 0 mode and TE 1 mode power equalizer has the following technical effects:
(1) The power divider of the invention can convert the TE 0 mode of the input end into the TE 0 mode and the TE 1 mode of the output end.
(2) The TE 0 mode and TE 1 mode power divider provided by the invention can realize the power average distribution of the TE 0 mode and the TE 1 mode at the output end.
Drawings
Fig. 1 is a schematic structural diagram of a power equalizer according to an embodiment of the present invention;
FIG. 2 is a top view of a silicon core according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating transmission efficiency of each mode with different offset widths W offset according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of TE 0 mode transmitted by the input end of the power equalizer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of TE 0 mode excited by the output end of the power equalizer according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of TE 1 mode excited by the output end of the power equalizer according to an embodiment of the present invention;
wherein, the reference numerals are as follows: 1-a lower cladding layer; 2-silicon core; 3-upper cladding.
Detailed Description
The invention is further explained in the following detailed description with reference to the drawings so that those skilled in the art can more fully understand the invention and can practice it, but the invention is explained below by way of example only and not by way of limitation.
As shown in fig. 1, a TE 0 mode and TE 1 mode power splitter includes a lower cladding layer 1, a silicon core 2, and an upper cladding layer 3; the silicon core 2 is arranged at the top end of the lower cladding 1; wherein the refractive index n Si = 3.455 of the silicon core 2, the height is h 2 =220 nm, the input end width is W I =0.45 μm, and the output end width W O =1.5 μm. The material of the lower cladding layer 1 is SiO 2, the refractive index n SiO2 =1.445, the height h 1 =500 nm and the width W 0>WO. The upper cladding layer 3 is air.
As shown in fig. 2, which is a top view of the silicon core 2, the offset width between the center of the input end and the center of the output end is W offset. The length of the input end is L I, the length of the intermediate tapered waveguide is l=0, and the length of the output end is L O. The incident beam wavelength was set to 1550nm.
As shown in fig. 3, transmission efficiency of each mode at different offset widths W offset is shown. As can be seen from this figure, the excitation power ratio of the TE 0 mode and the TE 1 mode depends on the offset width W offset. It can also be seen from the figure that the power of the TE 0 mode and the TE 1 mode are equal when the offset width W offset = 315.5 nm. Therefore, the connection mode for implementing the TE 0 mode and TE 1 mode power divider of the present invention is:
(1) The length l=0 of the tapered waveguide between the input and output ends, i.e. the input and output ends are directly connected.
(2) The offset width between the center of the input and the center of the output is W offset = 315.5nm.
By the arrangement, the TE 0 mode and the TE 1 mode power sharing can be realized, and the TE 0 mode and the TE 1 mode power sharing device of the invention is formed. In addition, the input end length L I and the output end length L O are relatively free to select, and can be selected according to implementation requirements.
In the TE 0 mode and TE 1 mode power splitters, as shown in fig. 4, the input transmits the TE 0 mode; as shown in fig. 5-6, it is desirable to excite both the TE 0 and TE 1 modes at the output, and the power of these two modes is equal.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (3)
1. The TE 0 mode and TE 1 mode power equalizer is characterized by comprising a lower cladding (1), a silicon core (2) and an upper cladding (3); the silicon core (2) is arranged at the top end of the lower cladding (1); the refractive index n Si = 3.455 of the silicon core (2), the height is h 2 =220 nm, the input end width is W I =0.45 μm, the output end width W O =1.5 μm, the offset width between the center of the input end and the center of the output end is W offset, the length of the input end is L I, the length of the middle tapered waveguide is L, the length of the output end is L O, and the length of the tapered waveguide between the input end and the output end is l=0, namely the input end and the output end are directly connected; the offset width between the center of the input and the center of the output is set to W offset =315.5 nm.
2. The TE 0 mode and TE 1 mode power homogenizer according to claim 1, wherein the material of the lower cladding layer (1) is SiO 2, the refractive index n SiO2 = 1.445, the height h 1 = 500nm and the width W 0>WO.
3. A TE 0 mode and TE 1 mode power homogenizer according to claim 1, wherein the upper cladding (3) is air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311137559.4A CN117075257B (en) | 2023-09-05 | 2023-09-05 | TE (TE)0Mode and TE1Mode power equalizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311137559.4A CN117075257B (en) | 2023-09-05 | 2023-09-05 | TE (TE)0Mode and TE1Mode power equalizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117075257A CN117075257A (en) | 2023-11-17 |
| CN117075257B true CN117075257B (en) | 2024-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311137559.4A Active CN117075257B (en) | 2023-09-05 | 2023-09-05 | TE (TE)0Mode and TE1Mode power equalizer |
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| Country | Link |
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| CN (1) | CN117075257B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103424805A (en) * | 2012-12-20 | 2013-12-04 | 上海信电通通信建设服务有限公司 | Y-bifurcation-structured 1 * 2 optical power splitter |
| CN112666652A (en) * | 2020-12-26 | 2021-04-16 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Polarization-independent optical power beam splitter |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100417001B1 (en) * | 2001-12-17 | 2004-02-05 | 삼성전자주식회사 | Optical power splitter with assistant waveguide |
| JP2019144433A (en) * | 2018-02-21 | 2019-08-29 | 株式会社フジクラ | Substrate type optical waveguide and introducing method |
| CN115951451B (en) * | 2022-10-31 | 2023-06-20 | 南通大学 | Be applicable to TM 1 And TE (TE) 2 Adiabatic mode converter for mode conversion |
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- 2023-09-05 CN CN202311137559.4A patent/CN117075257B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103424805A (en) * | 2012-12-20 | 2013-12-04 | 上海信电通通信建设服务有限公司 | Y-bifurcation-structured 1 * 2 optical power splitter |
| CN112666652A (en) * | 2020-12-26 | 2021-04-16 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Polarization-independent optical power beam splitter |
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| CN117075257A (en) | 2023-11-17 |
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