CN117040472A - Surface acoustic wave resonator device and method of forming the same - Google Patents
Surface acoustic wave resonator device and method of forming the same Download PDFInfo
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- CN117040472A CN117040472A CN202310996062.1A CN202310996062A CN117040472A CN 117040472 A CN117040472 A CN 117040472A CN 202310996062 A CN202310996062 A CN 202310996062A CN 117040472 A CN117040472 A CN 117040472A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims description 140
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 285
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000003313 weakening effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14502—Surface acoustic wave [SAW] transducers for a particular purpose
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
A surface acoustic wave resonator device and a method of forming the same, wherein the structure includes: the bonding layer is positioned on the surface of the substrate, the first load layer is positioned in the bonding layer, and the first load layer is parallel to the first direction; a piezoelectric layer located on the surface of the bonding layer; the interdigital electrode structure is positioned on the surface of the piezoelectric layer and comprises a plurality of first electrode strips and a plurality of second electrode strips, each second electrode strip is positioned between two adjacent first electrode strips and partially overlapped with the adjacent first electrode strips, the first electrode strips and the second electrode strips are parallel to a second direction, and the second direction is parallel to the surface of the substrate and is mutually perpendicular to the first direction; the substrate comprises a superposition area, the mutual superposition parts of the first electrode strips and the second electrode strips are positioned on the superposition area, the superposition area comprises an end area and a middle area which are distributed along the second direction, the end area is positioned on two sides of the middle area, and the first load layer is positioned on the end area, so that the generation of transverse waves is effectively inhibited.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a surface acoustic wave resonator device and a method for forming the same.
Background
A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. The radio frequency filter includes a piezoelectric surface acoustic wave (Surface Acoustic Wave, SAW for short), a piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW for short), a Micro-Electro-Mechanical System (MEMS for short), an integrated passive device (Integrated Passive Devices, IPD for short), and the like.
The quality factor value (Q value) of the surface acoustic wave resonator is high, and the surface acoustic wave resonator is made into a radio frequency filter with low insertion loss and high out-of-band rejection (out-of-band rejection), namely the surface acoustic wave resonator, which is a mainstream radio frequency filter used in wireless communication equipment such as mobile phones, base stations and the like at present.
However, the performance of the existing surface acoustic wave resonator device has yet to be improved.
Disclosure of Invention
The invention solves the technical problem of providing a surface acoustic wave resonance device and a forming method thereof so as to improve the performance of a SAW filter.
In order to solve the above technical problems, the present invention provides a surface acoustic wave resonator device, including: a substrate; the bonding layer and the first load layer are positioned on the surface of the substrate, the first load layer is positioned in the bonding layer, the first load layer is parallel to a first direction, and the first direction is parallel to the surface of the substrate; the piezoelectric layer is positioned on the surface of the bonding layer, and the substrate and the piezoelectric layer are positioned on two sides of the bonding layer; the interdigital electrode structure is positioned on the surface of the piezoelectric layer and comprises a plurality of first electrode strips and a plurality of second electrode strips, each second electrode strip is positioned between two adjacent first electrode strips and partially coincides with the adjacent first electrode strips, the first electrode strips and the second electrode strips are parallel to a second direction, and the second direction is parallel to the surface of the substrate and is mutually perpendicular to the first direction; the substrate comprises a superposition area, the mutually superposed parts of the first electrode strips and the second electrode strips are positioned on the superposition area, the superposition area comprises an end area and a middle area which are arranged along the second direction, the end area is positioned on two sides of the middle area, and the first load layer is positioned on the end area.
Optionally, the substrate further includes a first bus region, a first gap region, a second gap region, and a second bus region, where the first bus region, the first gap region, the overlapping region, the second gap region, and the second bus region are arranged along the second direction, and the first gap region is located between the first bus region and the overlapping region, and the second gap region is located between the second bus region and the overlapping region; the interdigital electrode structure further comprises a first bus positioned on the first bus region and a second bus positioned on the second bus region, wherein a plurality of first electrode strips are positioned on the overlapping region, extend to the first gap region and are electrically connected with the first bus, and a plurality of second electrode strips are positioned on the overlapping region, extend to the second gap region and are electrically connected with the second bus.
Optionally, the end region includes a first end region and a second end region, and the first end region and the second end region are respectively located at two sides of the middle region; the first load layer includes a first load portion located on the first end region and a second load portion located on the second end region; parameters of the first and second load portions are the same, including material, thickness, and distance from the substrate surface.
Optionally, the end region includes a first end region and a second end region, and the first end region and the second end region are respectively located at two sides of the middle region; the first load layer is located on the first end region, and the bonding layer further comprises a second load layer located on the second end region, wherein the second load layer is parallel to the first direction; the first and second load layers differ in parameters including a distance from the substrate surface.
Optionally, the parameters further comprise one or more of material, width, and thickness.
Optionally, the material of the second support layer comprises a metal comprising a combination of one or more of titanium, tungsten, molybdenum, platinum, gold, and aluminum.
Optionally, the method further comprises: the temperature compensation layer is positioned on the surface of the interdigital electrode structure and covers the interdigital electrode structure; the material of the temperature compensation layer comprises silicon oxide.
Optionally, the material of the first support layer comprises a metal comprising a combination of one or more of titanium, tungsten, molybdenum, platinum, gold, and aluminum.
Optionally, the bonding layer has a thickness in a range of 2000 to 10000 angstroms.
Optionally, the material of the piezoelectric layer includes a piezoelectric material, and the piezoelectric material includes lithium tantalate or lithium niobate.
Correspondingly, the technical scheme of the invention also provides a method for the surface acoustic wave resonance device, which comprises the following steps: providing a substrate; forming a bonding layer and a first load layer on the surface of the substrate, wherein the first load layer is positioned in the bonding layer, the first load layer is parallel to a first direction, and the first direction is parallel to the surface of the substrate; acquiring a piezoelectric layer, and bonding the substrate and the piezoelectric layer through the bonding layer, wherein the substrate and the piezoelectric layer are positioned on two sides of the bonding layer; forming an interdigital electrode structure positioned on the surface of the piezoelectric layer, wherein the interdigital electrode structure comprises a plurality of first electrode strips and a plurality of second electrode strips, each second electrode strip is positioned between two adjacent first electrode strips and partially coincides with the adjacent first electrode strips, the first electrode strips and the second electrode strips are parallel to a second direction, and the second direction is parallel to the surface of the substrate and is mutually perpendicular to the first direction; the substrate comprises a superposition area, the mutually superposed parts of the first electrode strips and the second electrode strips are positioned on the superposition area, the superposition area comprises an end area and a middle area which are arranged along the second direction, the end area is positioned on two sides of the middle area, and the first load layer is positioned on the end area.
Optionally, the substrate further includes a first bus region, a first gap region, a second gap region, and a second bus region, where the first bus region, the first gap region, the overlapping region, the second gap region, and the second bus region are arranged along the second direction, and the first gap region is located between the first bus region and the overlapping region, and the second gap region is located between the second bus region and the overlapping region; the interdigital electrode structure further comprises a first bus positioned on the first bus region and a second bus positioned on the second bus region, wherein a plurality of first electrode strips are positioned on the overlapping region, extend to the first gap region and are electrically connected with the first bus, and a plurality of second electrode strips are positioned on the overlapping region, extend to the second gap region and are electrically connected with the second bus.
Optionally, the end region includes a first end region and a second end region, and the first end region and the second end region are respectively located at two sides of the middle region; forming the first loading layer includes forming a first loading portion on the first end region and a second loading portion on the second end region; the first and second load portions have the same parameters including material, thickness, and distance from the substrate surface.
Optionally, the forming method of the bonding layer and the first load layer includes: forming a first bonding material layer on the surface of the substrate; forming a first loading material layer on the first bonding material layer; patterning the first load material layer to form the first load part and the second load part; and forming a second bonding material layer on the surfaces of the first bonding material layer, the first load part and the second load part, and covering the first bonding material layer, the first load part and the second load part.
Optionally, the end region includes a first end region and a second end region, the first end region and the second end region are respectively located in two sides of the middle region, the first load layer is located on the first end region, and further includes: forming a second load layer on the second end region, the bonding layer further comprising the second load layer, the second load layer being parallel to the first direction; the first and second load layers differ in parameters including a distance from the substrate surface.
Optionally, the parameters further comprise one or more of material, width, and thickness.
Optionally, the forming method of the bonding layer, the first load layer and the second load layer includes: forming a first bonding material layer on the surface of the substrate; forming the first load layer on part of the surface of the first bonding material layer; forming a second bonding material layer on the surface of the first bonding material layer and the surface of the first load layer, wherein the second bonding material layer covers the first bonding material layer and the first load layer; forming a second load layer on part of the surface of the second bonding material layer; and forming a third bonding material layer on the surfaces of the second bonding material layer and the second load layer, wherein the third bonding material layer covers the second bonding material layer and the second load layer.
Optionally, the forming method of the bonding layer, the first load layer and the second load layer includes: forming an initial first bonding material layer on the surface of the substrate; etching a part of the initial first bonding material layer on the second end region to enable the surface of the initial first bonding material layer on the second end region to be lower than that of the initial first bonding material layer on the first end region, so as to form a first bonding material layer; forming the first load layer on the first end region and the second load layer on the second end region on the first bonding material layer; and forming a second bonding material layer on the surfaces of the first bonding material layer, the first load layer and the second load layer, wherein the second bonding material layer covers the first bonding material layer, the first load layer and the second load layer.
Optionally, the method further comprises: forming a temperature compensation layer on the surface of the interdigital electrode structure, wherein the temperature compensation layer covers the interdigital electrode structure; the material of the temperature compensation layer comprises silicon oxide.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the surface acoustic wave resonator device provided by the technical scheme of the invention, the bonding layer and the first load layer are positioned on the surface of the substrate, the first load layer is positioned in the bonding layer, and the first load layer enables the surface acoustic wave resonator device to be excited to form a piston mode (piston mode), so that high-order transverse parasitic resonance is restrained, and transverse wave generation can be effectively restrained.
Further, the bonding layer further comprises a second load layer, the parameters of the first load layer and the second load layer are different, and the parameters comprise the distance between the first load layer and the substrate surface; the parameters further include one or more of a material, a width, and a thickness, so that the first load layer and the second load layer are differentiated, and resonance frequencies of the first load layer and the second load layer can be respectively adjusted, so that parasitic resonance introduced by the first load layer and parasitic resonance introduced by the second load layer can be offset or partially offset from each other, thereby weakening a splitting mode caused by introducing a load structure.
In the method for forming the surface acoustic wave resonator device provided by the technical scheme of the invention, the bonding layer and the first load layer are formed on the surface of the substrate, the first load layer is positioned in the bonding layer, and the first load layer enables the surface acoustic wave resonator device to excite to form a piston mode (piston mode), so that high-order transverse parasitic resonance is restrained, and transverse wave generation can be effectively restrained.
Further, the bonding layer further comprises a second load layer, the parameters of the first load layer and the second load layer are different, and the parameters comprise the distance between the first load layer and the substrate surface; the parameters further include one or more of a material, a width, and a thickness, so that the first load layer and the second load layer are differentiated, and resonance frequencies of the first load layer and the second load layer can be respectively adjusted, so that parasitic resonance introduced by the first load layer and parasitic resonance introduced by the second load layer can be offset or partially offset from each other, thereby weakening a splitting mode caused by introducing a load structure.
Drawings
Fig. 1 is a schematic structural view of a surface acoustic wave resonator device;
fig. 2 to 17 are schematic structural views of a process of forming a surface acoustic wave resonator device in an embodiment of the present invention;
Fig. 18 is a schematic structural view of a process of forming a surface acoustic wave resonator device in another embodiment of the present invention;
fig. 19 is a schematic structural view of a process of forming a surface acoustic wave resonator device in yet another embodiment of the present invention.
Detailed Description
Note that "surface", "upper", as used herein, describes a relative positional relationship in space, and is not limited to whether or not it is in direct contact.
As described in the background art, the performance of the surface acoustic wave resonator device has yet to be improved. The analysis will now be described in connection with a surface acoustic wave resonator device.
Fig. 1 is a schematic structural view of a surface acoustic wave resonator device.
Referring to fig. 1, the surface acoustic wave resonator device includes: a substrate 100; an intermediate layer 101 on the substrate 100; a piezoelectric film 102 on the intermediate layer 101; an interdigital electrode structure 103 located on the piezoelectric film 102.
In the surface acoustic wave resonator, the substrate 100 is made of high-resistance silicon (Si), and the intermediate layer 101 is made of silicon oxide (SiO 2 ) The piezoelectric film 102 is made of lithium tantalate (LiTaO) 3 ) Based on LiTaO 3 /SiO 2 The hetero interface in the heterostructure of/Si can effectively confine the energy of the high sonic acoustic mode in the piezoelectric film 102, improving the device Frequency and Q value of (a); in addition, the substrate 100 having a low thermal expansion coefficient and a high thermal conductivity is advantageous in improving the temperature stability of the surface wave filter.
However, this structure makes it difficult to suppress the high-order lateral parasitic mode, and the resulting filter passband has a lateral wave, which increases the insertion loss.
In order to solve the above problems, the present invention provides a surface acoustic wave resonator device and a forming method thereof, wherein the bonding layer is located on the surface of the substrate, and the first load layer is located in the bonding layer, and the first load layer enables the surface acoustic wave resonator device to excite to form a piston mode (piston mode), so as to inhibit high-order lateral parasitic resonance, and effectively inhibit generation of lateral waves.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 18 are schematic structural views of a process of forming a surface acoustic wave resonator device in an embodiment of the present invention.
Referring to fig. 2 and 3, fig. 2 is a schematic top view of a substrate, fig. 3 is a schematic cross-sectional view along the direction EE1 in fig. 2, and a base 200 is provided, where the base 200 includes a coinciding zone, the coinciding zone includes an end zone and a middle zone C arranged along the second direction Y, and the end zones are located at two sides of the middle zone C.
In this embodiment, the end regions include a first end region a and a second end region B, and the first end region a and the second end region B are respectively located at two sides of the middle region C.
In this embodiment, the material of the substrate 200 includes silicon; the resistivity of the substrate 200 ranges from 5000 Ω·cm to 10000 Ω·cm. The substrate 200 has higher resistivity, and because the high-resistance silicon has the characteristics of low thermal expansion coefficient and high thermal conductivity, the substrate 200 can inhibit the deformation of the piezoelectric layer, thereby playing a role in temperature compensation, being beneficial to obtaining a lower frequency temperature drift coefficient and improving the performance of devices.
In this embodiment, the substrate 200 further includes a first bus area L1, a first gap area g1, a second gap area g2, and a second bus area L2, where the first bus area L1, the first gap area g1, the overlapping area, the second gap area g2, and the second bus area L2 are arranged along the second direction Y, and the first gap area g1 is located between the first bus area L1 and the overlapping area, and the second gap area g2 is located between the second bus area L2 and the overlapping area.
Subsequently, a bonding layer and a first load layer are formed on the surface of the substrate 200, the first load layer is located in the bonding layer, the first load layer is parallel to a first direction X, the first direction X is parallel to the surface of the substrate 200, and the first load layer is located on the end region.
In this embodiment, forming the first load layer includes forming a first load portion on the first end region a and a second load portion on the second end region B. In another embodiment, the first load layer is located on the first end region, and a second load layer is also formed on the second end region, the second load layer also being located within the bonding layer, the second load layer being parallel to the first direction.
In this embodiment, the first load portion and the second load portion have the same parameters, including material, thickness, and distance from the substrate surface. Specifically, the first load part and the second load part are located on the same layer.
In another embodiment, the first and second load layers differ in parameters including distance from the substrate surface. In yet another embodiment, the first and second load layers differ in parameters, the parameters also including one or more of material, width, and thickness.
In this embodiment, please refer to fig. 4 to 9 for a method for forming the bonding layer and the first loading layer.
Referring to fig. 4 to 6, fig. 4 is a schematic top view, fig. 5 is a schematic cross-sectional view along the EE1 direction in fig. 4, and fig. 6 is a schematic cross-sectional view along the FF1 direction in fig. 4, wherein a first bonding material layer 201 is formed on the surface of the substrate 200; forming the first loading material layer (not shown) on the first bonding material layer 201; the first load material layer is patterned to form the first load portion 202a and the second load portion 202b.
Specifically, the first load portion 202a is located on the first end region a, and the second load portion 202B is located on the second end region B; the first load portion 202a and the second load portion 202b are both parallel to the first direction X.
The material of the first support layer comprises a metal comprising a combination of one or more of titanium, tungsten, molybdenum, platinum, gold, and aluminum. In this embodiment, the material of the first load layer is molybdenum.
Referring to fig. 7 to 9, fig. 7 is a schematic top view, fig. 8 is a schematic cross-sectional view along the EE1 direction in fig. 7, fig. 9 is a schematic cross-sectional view along the FF1 direction in fig. 7, and a second bonding material layer 203 is formed on the surfaces of the first bonding material layer 201, the first load portion 202a and the second load portion 202b to cover the first bonding material layer 201, the first load portion 202a and the second load portion 202b.
In this embodiment, the method for forming a bonding layer further includes: after the second bonding material layer 203 is formed, a mechanochemical grinding process is adopted to planarize the surface of the second bonding material layer 203. The mechanochemical grinding process is used for enabling the roughness (Ra) of the surface of the bonding layer to meet bonding requirements and improving bonding strength of the formed surface acoustic wave resonance device.
In this embodiment, the thickness of the bonding layer ranges from 2000 to 10000 a.
The bonding layer material comprises one or more of silicon oxide, silicon nitride, silicon and gallium arsenide. Specifically, the materials of the first bonding material layer 201 and the second bonding material layer 203 include one or more of silicon oxide, silicon nitride, silicon, and gallium arsenide. When the bonding layer is made of a material with a positive frequency temperature coefficient (such as silicon oxide), the piezoelectric layer with a negative temperature coefficient can be compensated, so that a lower frequency temperature drift coefficient can be obtained, and the stability of the device is improved.
In this embodiment, the materials of the first bonding material layer 201 and the second bonding material layer 203 are both silicon oxide.
Referring to fig. 10 to 12, fig. 10 is a schematic top view, fig. 11 is a schematic cross-sectional view along the EE1 direction in fig. 10, fig. 12 is a schematic cross-sectional view along the FF1 direction in fig. 10, a piezoelectric layer 204 is obtained, the substrate 200 and the piezoelectric layer 204 are bonded through the bonding layer, and the substrate 200 and the piezoelectric layer 204 are located at two sides of the bonding layer.
In this embodiment, after the bonding process, the piezoelectric layer 204 is thinned from the piezoelectric layer 204 toward the substrate 200.
The material of the piezoelectric layer 204 includes a piezoelectric material including lithium tantalate or lithium niobate. In this embodiment, the material of the piezoelectric layer 204 is lithium tantalate.
In this embodiment, the thinning process includes a mechanochemical polishing process.
Referring to fig. 13 to 15, fig. 13 is a schematic top view structure, fig. 14 is a schematic cross-sectional structure along the EE1 direction in fig. 13, fig. 15 is a schematic cross-sectional structure along the FF1 direction in fig. 13, forming an interdigital electrode structure on the surface of the piezoelectric layer 204, where the interdigital electrode structure includes a plurality of first electrode bars 205 and a plurality of second electrode bars 206, each second electrode bar 206 is located between two adjacent first electrode bars 205 and partially overlaps with the adjacent first electrode bars 205, mutually overlapping portions of the plurality of first electrode bars 205 and the plurality of second electrode bars 206 are located on the overlapping region, and the first electrode bars 205 and the second electrode bars 206 are parallel to a second direction Y, which is parallel to the surface of the substrate 200 and perpendicular to the first direction X.
In this embodiment, the interdigital electrode structure further includes a first bus 207 located on the first bus area L1 and a second bus 208 located on the second bus area L2, where a plurality of the first electrode strips 205 are located on the overlapping area and extend to the first gap area g1, and are electrically connected to the first bus 207, and a plurality of the second electrode strips 206 are located on the overlapping area and extend to the second gap area g2, and are electrically connected to the second bus 208.
The material of the interdigital electrode structure comprises a metal, wherein the metal comprises one or a combination of a plurality of copper, aluminum, tungsten, cobalt, nickel, molybdenum, titanium and tantalum.
In this embodiment, a protective layer is also formed on the interdigital electrode structure. The method of forming the protective layer is shown in fig. 16 and 17.
In another embodiment, a temperature compensation layer is also formed on the interdigital electrode structure, the temperature compensation layer covering the interdigital electrode structure; the material of the temperature compensation layer comprises silicon oxide.
Referring to fig. 16 and 17, the view direction of fig. 16 is the same as that of fig. 14, the view direction of fig. 17 is the same as that of fig. 15, and a protective layer 209 is formed on the interdigital electrode structure.
So far, the first load layer enables the surface acoustic wave resonance device to excite to form a piston mode (piston mode), and can effectively inhibit the generation of transverse waves by inhibiting high-order transverse parasitic resonance.
For convenience of explanation, fig. 16 also shows a schematic diagram of the relative magnitudes of sound speeds corresponding to the respective regions of the formed surface acoustic wave resonator device. Specifically, the sound velocity in the surface acoustic wave resonator regions in the first end region a and the second end region B is reduced by the first load portion 202a and the second load portion 202B, respectively, so that the sound velocity is smaller than the sound velocity in the surface acoustic wave resonator region in the middle region C, thereby forming a piston mode. In this embodiment, the first load 202a and the second load 202B have the same parameters, so that the sound velocity is the same in the surface acoustic wave resonator region on the first end region a and the second end region B.
In this embodiment, the material of the protective layer 209 includes a dielectric material, where the dielectric material includes one or more of silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, and silicon oxycarbonitride.
Correspondingly, the embodiment of the present invention further provides a surface acoustic wave resonator device formed by the above method, please continue to refer to fig. 16 and 17, which includes: a substrate 200; a bonding layer and a first load layer on the surface of the substrate 200, wherein the first load layer is located in the bonding layer, the first load layer is parallel to a first direction X, and the first direction X is parallel to the surface of the substrate; the piezoelectric layer 204 is positioned on the surface of the bonding layer, and the substrate 200 and the piezoelectric layer 204 are positioned on two sides of the bonding layer; an interdigital electrode structure (as shown in fig. 13) located on the surface of the piezoelectric layer 204, where the interdigital electrode structure includes a plurality of first electrode strips 205 and a plurality of second electrode strips 206, each of the second electrode strips 206 is located between two adjacent first electrode strips 205 and partially coincides with the adjacent first electrode strips 205, and the first electrode strips 205 and the second electrode strips 206 are parallel to a second direction Y, and the second direction Y is parallel to the surface of the substrate 200 and is perpendicular to the first direction X; the substrate 200 includes a coinciding zone on which the mutually coinciding portions of the plurality of first electrode strips 205 and the plurality of second electrode strips 206 are located, the coinciding zone including an end zone and an intermediate zone C arranged along the second direction Y, the end zone being located on both sides of the intermediate zone C, and the first load layer being located on the end zone.
In this embodiment, the substrate 200 further includes a first bus area L1, a first gap area g1, a second gap area g2, and a second bus area L2, where the first bus area L1, the first gap area g1, the overlapping area, the second gap area g2, and the second bus area L2 are arranged along the second direction Y, and the first gap area g1 is located between the first bus area L1 and the overlapping area, and the second gap area g2 is located between the second bus area L2 and the overlapping area.
In this embodiment, the interdigital electrode structure further includes a first bus 207 located on the first bus area L1 and a second bus 208 located on the second bus area L2, where a plurality of the first electrode strips 205 are located on the overlapping area and extend to the first gap area g1, and are electrically connected to the first bus 207, and a plurality of the second electrode strips 206 are located on the overlapping area and extend to the second gap area g2, and are electrically connected to the second bus 208.
In this embodiment, the end regions include a first end region a and a second end region B, and the first end region a and the second end region B are respectively located at two sides of the middle region C.
In this embodiment, the first load layer includes a first load portion 202a located on the first end region a and a second load portion 202B located on the second end region B; the parameters of the first load portion 202a and the second load portion 202b are the same, and the parameters include a distance from the surface of the substrate 200. In this embodiment, the parameters further include one or more of material, width, and thickness.
In another embodiment, the end regions include a first end region and a second end region, the first end region and the second end region being located on either side of the intermediate region, respectively; the first load layer is located on the first end region, and the bonding layer further comprises a second load layer located on the second end region, wherein the second load layer is parallel to the first direction; the first and second load layers differ in parameters including a distance from the substrate surface.
In this embodiment, the surface acoustic wave resonator device further includes: a protective layer 209 over the interdigitated electrode structure; the material of the protective layer 209 includes a dielectric material including one or more of silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, and silicon oxycarbonitride.
In another embodiment, the surface acoustic wave resonator apparatus further includes: the temperature compensation layer is positioned on the interdigital electrode structure and covers the interdigital electrode structure; the material of the temperature compensation layer comprises silicon oxide.
The material of the first support layer comprises a metal comprising a combination of one or more of titanium, tungsten, molybdenum, platinum, gold, and aluminum. In this embodiment, the material of the first load layer is molybdenum.
In this embodiment, the material of the substrate 200 includes silicon; the resistivity of the substrate 200 ranges from 5000 Ω·cm to 10000 Ω·cm. The substrate 200 has higher resistivity, and because the high-resistance silicon has the characteristics of low thermal expansion coefficient and high thermal conductivity, the high-resistance silicon is used for the substrate 200, and can inhibit the piezoelectric deformation of the piezoelectric layer, thereby playing a role in temperature compensation, being beneficial to obtaining a lower frequency temperature drift coefficient and improving the stability of a device.
The bonding layer material comprises one or more of silicon oxide, silicon nitride, silicon and gallium arsenide. When the bonding layer is made of a material with a positive frequency temperature coefficient (such as silicon oxide), the piezoelectric layer with a negative temperature coefficient can be compensated, so that a lower frequency temperature drift coefficient can be obtained, and the stability of the device is improved.
In this embodiment, the bonding layer is made of silicon oxide. Specifically, the materials of the first bonding material layer 201 and the second bonding material layer 203 are both silicon oxide.
In this embodiment, the thickness of the bonding layer ranges from 2000 to 10000 a.
The material of the piezoelectric layer 204 includes a piezoelectric material including lithium tantalate or lithium niobate. In this embodiment, the material of the piezoelectric layer 204 is lithium tantalate.
Fig. 18 is a schematic structural view of a process of forming a surface acoustic wave resonator device in another embodiment of the present invention.
The main difference between this embodiment and the previous embodiment is that: in the above embodiment, the first load layer includes a first load portion located on the first end region and a second load portion located on the second end region; the parameters of the first load part and the second load part are the same; in this embodiment, the first load layer is located on the first end region, and the bonding layer further includes a second load layer located on the second end region, where the second load layer is parallel to the first direction; the first and second load layers differ in parameters including a distance from the substrate surface.
In this embodiment, the parameters further include one or more of material, width, and thickness.
In this embodiment, the method for forming the bonding layer, the first load layer and the second load layer is based on fig. 3, and further refer to fig. 18.
Referring to fig. 18, a first bonding material layer 301 is formed on the surface of the substrate 200; forming the first load layer 302a on a part of the surface of the first bonding material layer 301; forming a second bonding material layer 303 on the surface of the first bonding material layer 301 and the surface of the first load layer 302a, where the second bonding material layer 303 covers the first bonding material layer 301 and the first load layer 302a; forming a second load layer 302b on a part of the surface of the second bonding material layer 303; a third bonding material layer 304 is formed on the surface of the second bonding material layer 303 and the surface of the second load layer 302b, and the third bonding material layer 304 covers the second bonding material layer 303 and the second load layer 302b.
Here, the first load layer 302a and the second load layer 302b are located in different layers, and one or more of materials, widths and thicknesses of the first load layer 302a and the second load layer 302b are different, so that the first load layer 302a and the second load layer 302b are differentiated, and resonance frequencies of the first load layer 302a and the second load layer 302b can be respectively adjusted, so that parasitic resonance introduced by the first load layer 302a and parasitic resonance introduced by the second load layer 302b can cancel or partially cancel each other, thereby weakening a splitting mode caused by introducing a load structure.
For convenience of explanation, fig. 18 also shows a schematic diagram of the relative magnitudes of sound velocities corresponding to the respective regions of the formed surface acoustic wave resonator device.
Specifically, the sound velocity in the surface acoustic wave resonator regions in the first end region a and the second end region B is reduced by the first load layer 302a and the second load layer 302B, respectively, so that the sound velocity is smaller than the sound velocity in the surface acoustic wave resonator region in the middle region C, thereby forming a piston mode.
In this embodiment, the mass of the second load layer 302B is greater than that of the first load layer 302a, so that the sound velocity in the surface acoustic wave resonator region on the second end region B is less than that in the surface acoustic wave resonator region on the first end region a, and the parasitic resonance introduced by the first load layer 302a is different from the parasitic resonance introduced by the second load layer 302B, and the parasitic resonance can cancel each other out or partially cancel each other out, so as to weaken the splitting mode caused by introducing the load structure.
In this embodiment, the method for forming a bonding layer further includes: after forming the third bonding material layer 304, a mechanochemical polishing process is used to planarize the surface of the third bonding material layer 304.
Subsequently, please continue to refer to fig. 18, a piezoelectric layer 305 is obtained, the substrate 200 and the piezoelectric layer 305 are bonded through the bonding layer, and the substrate 200 and the piezoelectric layer 305 are located at two sides of the bonding layer; forming an interdigital electrode structure 306 on the surface of the piezoelectric layer 305, where the interdigital electrode structure 306 includes a plurality of first electrode strips (not shown in the figure) and a plurality of second electrode strips (not shown in the figure), each of the second electrode strips is located between two adjacent first electrode strips and partially coincides with the adjacent first electrode strips, and the first electrode strips and the second electrode strips are parallel to a second direction (not shown in the figure), and the second direction is parallel to the surface of the substrate 200 and is perpendicular to the first direction (not shown in the figure); a protective layer 307 is formed on the interdigital electrode structure 306. Here, please refer to the above embodiment for specific description, and the description is omitted here.
Correspondingly, the embodiment of the invention also provides the surface acoustic wave resonant device formed by adopting the method, and please continue to refer to fig. 18.
The main difference between this embodiment and the previous embodiment is that: in the above embodiment, the first load layer includes a first load portion located on the first end region and a second load portion located on the second end region; the parameters of the first load part and the second load part are the same; in this embodiment, the first load layer 302a is located on the first end region a, and the bonding layer further includes a second load layer 302B located on the second end region B, where the second load layer 302B is parallel to the first direction; the parameters of the first and second load layers 302a, 302b are different, including the distance from the surface of the substrate 200.
In this embodiment, the parameters further include one or more of material, width, and thickness.
Fig. 19 is a schematic structural view of a process of forming a surface acoustic wave resonator device in yet another embodiment of the present invention.
Please continue to refer to fig. 19 on the basis of fig. 14, a temperature compensation layer 400 is formed on the inter-digital electrode structure, and the temperature compensation layer 400 covers the inter-digital electrode structure.
In this embodiment, the material of the temperature compensation layer 400 includes silicon oxide. Because the silicon oxide is a material with a positive frequency temperature coefficient, the temperature compensation layer 400 can compensate the piezoelectric layer with a negative temperature coefficient, thereby being beneficial to obtaining a lower frequency temperature drift coefficient and improving the performance of the device.
The main difference between this embodiment and the previous embodiment is that: in this embodiment, the temperature compensation layer 400 is formed on the interdigital electrode structure, and in the previous embodiment, the protection layer is formed on the interdigital electrode structure.
Correspondingly, the embodiment of the invention also provides a surface acoustic wave resonator device formed by adopting the method, please continue to refer to fig. 19, which includes: located on the interdigitated electrode structure is a temperature compensation layer 400.
In this embodiment, the material of the temperature compensation layer 400 includes silicon oxide.
The main difference between this embodiment and the previous embodiment is that: in this embodiment, the temperature compensation layer 400 is disposed on the interdigital electrode structure, and in the above embodiment, the protection layer is formed on the interdigital electrode structure.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (19)
1. A surface acoustic wave resonator device comprising:
a substrate;
the bonding layer and the first load layer are positioned on the surface of the substrate, the first load layer is positioned in the bonding layer, the first load layer is parallel to a first direction, and the first direction is parallel to the surface of the substrate;
The piezoelectric layer is positioned on the surface of the bonding layer, and the substrate and the piezoelectric layer are positioned on two sides of the bonding layer;
the interdigital electrode structure is positioned on the surface of the piezoelectric layer and comprises a plurality of first electrode strips and a plurality of second electrode strips, each second electrode strip is positioned between two adjacent first electrode strips and partially coincides with the adjacent first electrode strips, the first electrode strips and the second electrode strips are parallel to a second direction, and the second direction is parallel to the surface of the substrate and is mutually perpendicular to the first direction;
the substrate comprises a superposition area, the mutually superposed parts of the first electrode strips and the second electrode strips are positioned on the superposition area, the superposition area comprises an end area and a middle area which are arranged along the second direction, the end area is positioned on two sides of the middle area, and the first load layer is positioned on the end area.
2. The surface acoustic wave resonator device of claim 1, wherein the substrate further comprises a first bus region, a first gap region, a second gap region, and a second bus region, the first gap region, the overlap region, the second gap region, and the second bus region being arranged along the second direction, and the first gap region being located between the first bus region and the overlap region, the second gap region being located between the second bus region and the overlap region; the interdigital electrode structure further comprises a first bus positioned on the first bus region and a second bus positioned on the second bus region, wherein a plurality of first electrode strips are positioned on the overlapping region, extend to the first gap region and are electrically connected with the first bus, and a plurality of second electrode strips are positioned on the overlapping region, extend to the second gap region and are electrically connected with the second bus.
3. The surface acoustic wave resonator device according to claim 1, wherein the end regions include a first end region and a second end region, the first end region and the second end region being located on both sides of the intermediate region, respectively; the first load layer includes a first load portion located on the first end region and a second load portion located on the second end region; parameters of the first and second load portions are the same, including material, thickness, and distance from the substrate surface.
4. The surface acoustic wave resonator device according to claim 1, wherein the end regions include a first end region and a second end region, the first end region and the second end region being located on both sides of the intermediate region, respectively; the first load layer is located on the first end region, and the bonding layer further comprises a second load layer located on the second end region, wherein the second load layer is parallel to the first direction; the first and second load layers differ in parameters including a distance from the substrate surface.
5. The surface acoustic wave resonator device of claim 4, wherein the parameters further comprise one or more of a material, a width, and a thickness.
6. The surface acoustic wave resonator device of claim 4, wherein the material of the second loading layer comprises a metal comprising a combination of one or more of titanium, tungsten, molybdenum, platinum, gold, and aluminum.
7. The surface acoustic wave resonator apparatus of claim 1, further comprising: the temperature compensation layer is positioned on the surface of the interdigital electrode structure and covers the interdigital electrode structure;
the material of the temperature compensation layer comprises silicon oxide.
8. The surface acoustic wave resonator device of claim 1, wherein the material of the first loading layer comprises a metal comprising a combination of one or more of titanium, tungsten, molybdenum, platinum, gold, and aluminum.
9. The surface acoustic wave resonator device according to claim 1, characterized in that the thickness of the bonding layer ranges from 2000 to 10000 a.
10. The surface acoustic wave resonator device according to claim 1, characterized in that the material of the piezoelectric layer comprises a piezoelectric material comprising lithium tantalate or lithium niobate.
11. A method of forming a surface acoustic wave resonator device, comprising:
Providing a substrate;
forming a bonding layer and a first load layer on the surface of the substrate, wherein the first load layer is positioned in the bonding layer, the first load layer is parallel to a first direction, and the first direction is parallel to the surface of the substrate;
acquiring a piezoelectric layer, and bonding the substrate and the piezoelectric layer through the bonding layer, wherein the substrate and the piezoelectric layer are positioned on two sides of the bonding layer;
forming an interdigital electrode structure positioned on the surface of the piezoelectric layer, wherein the interdigital electrode structure comprises a plurality of first electrode strips and a plurality of second electrode strips, each second electrode strip is positioned between two adjacent first electrode strips and partially coincides with the adjacent first electrode strips, the first electrode strips and the second electrode strips are parallel to a second direction, and the second direction is parallel to the surface of the substrate and is mutually perpendicular to the first direction;
the substrate comprises a superposition area, the mutually superposed parts of the first electrode strips and the second electrode strips are positioned on the superposition area, the superposition area comprises an end area and a middle area which are arranged along the second direction, the end area is positioned on two sides of the middle area, and the first load layer is positioned on the end area.
12. The method of forming a surface acoustic wave resonator device of claim 11, wherein the substrate further comprises a first bus region, a first gap region, a second gap region, and a second bus region, the first gap region, the overlap region, the second gap region, and the second bus region being arranged along the second direction with the first gap region between the first bus region and the overlap region, the second gap region between the second bus region and the overlap region; the interdigital electrode structure further comprises a first bus positioned on the first bus region and a second bus positioned on the second bus region, wherein a plurality of first electrode strips are positioned on the overlapping region, extend to the first gap region and are electrically connected with the first bus, and a plurality of second electrode strips are positioned on the overlapping region, extend to the second gap region and are electrically connected with the second bus.
13. The method of forming a surface acoustic wave resonator device of claim 11, wherein the end regions include a first end region and a second end region, the first end region and the second end region being located on opposite sides of the middle region, respectively; forming the first loading layer includes forming a first loading portion on the first end region and a second loading portion on the second end region; the first and second load portions have the same parameters including material, thickness, and distance from the substrate surface.
14. The method of forming a surface acoustic wave resonator device of claim 13, wherein the method of forming the bonding layer and the first loading layer comprises: forming a first bonding material layer on the surface of the substrate; forming a first loading material layer on the first bonding material layer; patterning the first load material layer to form the first load part and the second load part; and forming a second bonding material layer on the surfaces of the first bonding material layer, the first load part and the second load part, and covering the first bonding material layer, the first load part and the second load part.
15. The method of forming a surface acoustic wave resonator device of claim 11, wherein the end regions include a first end region and a second end region, the first end region and the second end region being located on opposite sides of the middle region, respectively, the first load layer being located on the first end region, further comprising: forming a second load layer on the second end region, the bonding layer further comprising the second load layer, the second load layer being parallel to the first direction; the first and second load layers differ in parameters including a distance from the substrate surface.
16. The method of forming a surface acoustic wave resonator device of claim 15 wherein the parameters further comprise one or more of material, width, and thickness.
17. The method of forming a surface acoustic wave resonator device of claim 15 wherein the method of forming the bonding layer, the first loading layer, and the second loading layer comprises: forming a first bonding material layer on the surface of the substrate; forming the first load layer on part of the surface of the first bonding material layer; forming a second bonding material layer on the surface of the first bonding material layer and the surface of the first load layer, wherein the second bonding material layer covers the first bonding material layer and the first load layer; forming a second load layer on part of the surface of the second bonding material layer; and forming a third bonding material layer on the surfaces of the second bonding material layer and the second load layer, wherein the third bonding material layer covers the second bonding material layer and the second load layer.
18. The method of forming a surface acoustic wave resonator device of claim 15 wherein the method of forming the bonding layer, the first loading layer, and the second loading layer comprises: forming an initial first bonding material layer on the surface of the substrate; etching a part of the initial first bonding material layer on the second end region to enable the surface of the initial first bonding material layer on the second end region to be lower than that of the initial first bonding material layer on the first end region, so as to form a first bonding material layer; forming the first load layer on the first end region and the second load layer on the second end region on the first bonding material layer; and forming a second bonding material layer on the surfaces of the first bonding material layer, the first load layer and the second load layer, wherein the second bonding material layer covers the first bonding material layer, the first load layer and the second load layer.
19. The method of forming a surface acoustic wave resonator device of claim 11, further comprising:
forming a temperature compensation layer on the surface of the interdigital electrode structure, wherein the temperature compensation layer covers the interdigital electrode structure; the material of the temperature compensation layer comprises silicon oxide.
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