CN116748959A - Polishing device and method for substrate and manufacturing method for photomask base plate - Google Patents
Polishing device and method for substrate and manufacturing method for photomask base plate Download PDFInfo
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- CN116748959A CN116748959A CN202310819751.5A CN202310819751A CN116748959A CN 116748959 A CN116748959 A CN 116748959A CN 202310819751 A CN202310819751 A CN 202310819751A CN 116748959 A CN116748959 A CN 116748959A
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- 239000000758 substrate Substances 0.000 title claims abstract description 282
- 238000005498 polishing Methods 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 58
- 230000009471 action Effects 0.000 claims abstract description 13
- 238000007517 polishing process Methods 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 31
- 150000002500 ions Chemical class 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 21
- 230000010363 phase shift Effects 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 210000002381 plasma Anatomy 0.000 description 66
- 230000008569 process Effects 0.000 description 20
- 239000000126 substance Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010028 chemical finishing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007519 figuring Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention provides a polishing device and a method for a substrate and a manufacturing method for a photomask base plate, wherein the polishing device for the substrate comprises the following components: an ion generator for emitting a plasma or ion beam toward a surface of the substrate; and the coil is arranged on the periphery of the substrate and is used for generating a magnetic field parallel to the surface of the substrate so that the plasma or the ion beam deflects to be parallel to the substrate under the action of the magnetic field. The technical scheme of the invention can avoid damaging the surface of the substrate in the polishing process, thereby obviously improving the flatness of the surface of the substrate and improving the roughness of the surface of the substrate.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing technology, and in particular, to a polishing apparatus and method for a substrate and a method for manufacturing a photomask substrate.
Background
Advanced optical fabrication, IT and optoelectronic industry substrates all require ultra-smooth and ultra-precise polishing techniques. Currently, the polishing techniques employed may include magnetorheological polishing (MRF, magneto-Rheological Finishing), ion beam polishing (IBF, ion Beam Figuring), and atmospheric pressure plasma chemical processing (APPCF, atmospheric Pressure Plasma Chemical Finishing), among others.
The magnetorheological polishing is formed by utilizing magnetorheological polishing liquid to generate rheology in a gradient magnetic field, and the flexible small grinding head with plastic bonding behavior has rapid relative motion with the substrate, so that the surface of the substrate is subjected to great shearing force, and the material on the surface of the substrate is removed; however, magnetorheological polishing belongs to a contact machining method, and damages to the surface of a substrate. The ion beam polishing is to bombard the surface of the substrate by utilizing neutral ion beam current so as to remove atoms or molecules in a certain area of the surface of the substrate, thereby achieving the purpose of ultra-smooth polishing; although this method is a non-contact machining method, the ion beam bombards the substrate surface vertically and still causes damage to the substrate surface. The atmospheric pressure plasma chemical processing is based on a plasma etching principle, active particles are excited by utilizing plasma, and the active particles and atoms on the surface of a substrate are subjected to chemical reaction to generate a gas product so as to finish the processing of materials; however, the plasma and the active particles used in this method are also emitted vertically to the substrate surface, and some damage is caused to the substrate surface.
Therefore, there is a need for improvements in the polishing technology of substrates to avoid damage to the substrate surface.
Disclosure of Invention
The invention aims to provide a polishing device and method for a substrate and a manufacturing method for a photomask base plate, which can avoid damaging the surface of the substrate in the polishing process, so that the flatness of the surface of the substrate is obviously improved, and the roughness of the surface of the substrate is improved.
In order to achieve the above object, the present invention provides a polishing apparatus for a substrate, comprising:
an ion generator for emitting a plasma or ion beam toward a surface of the substrate;
and the coil is arranged on the periphery of the substrate and is used for generating a magnetic field parallel to the surface of the substrate so that the plasma or the ion beam deflects to be parallel to the substrate under the action of the magnetic field.
Optionally, the polishing apparatus for a substrate includes at least four coils, each of which is uniformly disposed at the periphery of the substrate for generating a rotating magnetic field parallel to the surface of the substrate.
Optionally, each of the coils sequentially switches the access current in a cyclic manner along a direction surrounding the substrate.
Alternatively, two of the coils symmetrically disposed with respect to the central axis of the substrate are simultaneously energized with current.
Optionally, when two coils symmetrically arranged relative to the central axis of the substrate are connected with current at the same time, the directions of the current connected with the two coils are opposite.
Optionally, the ionizer includes an anode, a cathode, and a radio frequency power source connected to the anode and the cathode, respectively.
Optionally, the ionizer further comprises an inert gas source for delivering an inert gas between the anode and the cathode to produce chemically inactive inert gas ions or chemically inactive ion beams.
Optionally, when the ionizer is used for emitting plasma to the substrate surface, the ionizer further comprises a reactive gas source for delivering a reactive gas between the anode and the cathode to generate chemically active reactive gas ions.
Optionally, the polishing apparatus for a substrate further includes:
the coil is arranged at the periphery of the reaction chamber, and the ion generator is connected with the reaction chamber.
Optionally, the gas pressure in the reaction chamber is greater than 100mTorr.
The invention also provides a polishing method of the substrate, comprising the following steps:
providing a substrate;
and polishing the surface of the substrate by using deflected plasmas or ion beams generated by the polishing device of the substrate.
The invention also provides a manufacturing method of the photomask substrate, which comprises the following steps:
providing a substrate, and polishing the surface of the substrate by adopting the polishing method of the substrate;
forming a phase shift layer on the polished substrate;
forming a light shielding layer on the phase shift layer;
forming a photoresist layer on the shading layer.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. according to the polishing device for the substrate, at least one coil is arranged on the periphery of the substrate and used for generating a magnetic field parallel to the surface of the substrate, so that plasma or ion beams emitted by an ion generator to the surface of the substrate deflect in a direction parallel to the substrate under the action of the magnetic field, the surface of the substrate is prevented from being damaged in the polishing process, the flatness of the surface of the substrate is obviously improved, and the roughness of the surface of the substrate is improved.
2. According to the polishing method of the substrate, the deflected plasma or ion beam generated by the polishing device of the substrate is used for polishing the surface of the substrate, so that the surface of the substrate is prevented from being damaged in the polishing process, the flatness of the surface of the substrate is obviously improved, and the roughness of the surface of the substrate is improved.
3. According to the manufacturing method of the photomask substrate, the polishing method of the substrate is adopted to polish the surface of the substrate, so that the flatness of the surface of the substrate is obviously improved, the roughness of the surface of the substrate is improved, and the quality of the photomask substrate is further improved.
Drawings
FIG. 1 is a schematic view showing a structure of a polishing apparatus for a substrate according to an embodiment of the present invention;
FIG. 2 is a schematic view of a polishing apparatus for a substrate according to another embodiment of the present invention;
FIG. 3a is a schematic diagram of plasma deflection in accordance with one embodiment of the present invention;
FIG. 3b is a schematic diagram of the direction of deflection and the direction of magnetic field of a plasma according to an embodiment of the present invention;
FIG. 4a is a schematic view of a substrate prior to polishing;
FIG. 4b is a schematic illustration of the substrate after polishing with an undeflected plasma or ion beam;
FIG. 4c is a schematic illustration of a substrate after polishing with a deflected plasma or ion beam;
FIG. 4d is a schematic illustration of the substrate after etching using a plasma etch process;
fig. 5 is a flowchart of a polishing method of a substrate according to an embodiment of the present invention.
Wherein, the reference numerals of fig. 1 to 5 are as follows:
11-a substrate; 111-atoms; 12-an ionizer; 121-an anode; 122-cathode; 123-radio frequency power supply; 13-coil; 14-plasma; 15-magnetic field; 16-patterned photoresist layer.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention. It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for the same elements throughout for clarity.
It will be understood that when an element or layer is referred to as being "on" …, it can be directly on, adjacent, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, sections and/or processes, these elements, components, regions, layers, sections and/or processes should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, section, and/or process from another element, component, region, layer, section, and/or process. Thus, a first element, component, region, layer, section and/or process discussed below could be termed a second element, component, region, layer, section and/or process without departing from the teachings of the present invention.
Spatially relative terms, such as "under …," "under …," "below," "under …," "above …," "above," "on top of," "on bottom of," "front of," "back of," and the like, may be used herein for convenience of description to describe one element or feature as illustrated in the figures relative to another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "under" or "beneath" or "on the bottom" or "on the back" would then be oriented "on" or "top" or "forward" other elements or features. Thus, the exemplary terms "under …", "under …" and "on the back of …" may include both an upper and lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
An embodiment of the present invention provides a polishing apparatus for a substrate, including: an ion generator for emitting a plasma or ion beam toward a surface of the substrate; and the coil is arranged on the periphery of the substrate and is used for generating a magnetic field parallel to the surface of the substrate so that the plasma or the ion beam deflects to be parallel to the substrate under the action of the magnetic field.
The polishing apparatus for a substrate according to this embodiment will be described in more detail with reference to fig. 1 to 3b and fig. 4a to 4 d.
The ionizer 12 is configured to emit plasma or ion beam toward the surface of the substrate 11, and the plasma or ion beam emitted by the ionizer 12 is perpendicular to the surface of the substrate 11.
The substrate 11 is fixed on a chuck (not shown) and the ionizer 12 is disposed on a side of the substrate 11 remote from the chuck. Wherein the surface of the substrate 11 may be the front surface or the back surface of the substrate 11, and the surface of the substrate 11 to be polished faces the ionizer 12.
The cross-sectional shape of the substrate 11 may be circular, square, or the like.
In one embodiment, as shown in fig. 1 and 2, the ionizer 12 may include an anode 121, a cathode 122, and a radio frequency power source 123, the radio frequency power source 123 being connected to the anode 121 and the cathode 122, respectively. Wherein, fig. 1 is a schematic diagram of the ion generator 12 emitting plasma to the surface of the substrate 11, that is, fig. 1 is a schematic diagram of performing plasma chemical polishing on the surface of the substrate 11; fig. 2 is a schematic view of the ionizer 12 emitting an ion beam toward the surface of the substrate 11, i.e., fig. 2 is a view showing ion beam polishing of the surface of the substrate 11.
It should be noted that, the anode 121, the cathode 122 and the rf power supply 123 in the ionizer 12 in fig. 2 are not illustrated; also, the ionizer 12 is not limited to the constituent elements shown in fig. 1 and 2, and for example, the chuck may be used as a cathode in the ionizer 12, and thus, various ionizers commonly used in the art may be employed as long as it is capable of emitting plasma or ion beam.
When the ionizer 12 emits plasma toward the surface of the substrate 11, the ionizer 12 further includes an inert gas source (not shown) for supplying inert gas between the anode 121 and the cathode 122, and a reactive gas source (not shown) for supplying reactive gas between the anode 121 and the cathode 122.
When the ionizer 12 emits an ion beam toward the surface of the substrate 11, the ionizer 12 further includes an inert gas source (not shown) for supplying an inert gas between the anode 121 and the cathode 122, and a reactive gas source is not required in the ionizer 12.
The inert gas may include at least one of helium, argon, nitrogen, etc., and the reactive gas may include a fluorine-containing gas (e.g., SF 6 、CF 4 Etc.) and/or chlorine-containing gases (e.g. Cl) 2 、BCl 3 Etc.).
At least one coil 13 is disposed on the periphery of the substrate 11, the coil 13 is used for generating a magnetic field parallel to the surface of the substrate 11, and the area covered by the magnetic field is close to the surface of the substrate 11, so that the plasma or the ion beam perpendicular to the surface of the substrate 11 generates a deflection component in a direction parallel to the surface of the substrate 11 under the action of the magnetic field, and the direction of the deflection component is perpendicular to the direction of the magnetic field.
The winding method of the coil 13 is not limited, and the generated magnetic field may be parallel to the surface direction of the substrate 11. The charged ions in the plasma and the ion beam are subjected to a magnetic field to generate component forces perpendicular to the direction of the magnetic field and the direction of ion movement.
The polishing apparatus for a substrate further includes a power source connected to the coil 13 to generate a magnetic field when a current is applied to the coil 13.
The polishing apparatus for a substrate further includes a reaction chamber (not shown), the coil 13 is disposed at the periphery of the reaction chamber, the anode 121 and the cathode 122 in the ionizer 12 are disposed in the reaction chamber, the radio frequency power supply 123, the inert gas source and the reactive gas source in the ionizer 12 are disposed at the periphery of the reaction chamber, and the inert gas source and the reactive gas source are both communicated with the reaction chamber.
The reaction chamber can be controlled to be in a vacuum or atmospheric pressure environment, and preferably, the air pressure in the reaction chamber is more than 100mTorr.
Taking the ion generator 12 to emit plasma to the surface of the substrate 11 as an example, as shown in fig. 3a and 3b, fig. 3a is a front view, and fig. 3b is a top view; the process of deflecting the plasma in a direction parallel to the surface of the substrate 11 under the action of the magnetic field comprises: before the plasma 14 emitted by the ionizer 12 does not enter the region where the magnetic field 15 is located, i.e. when in the region N1 shown in fig. 3a, the plasma 14 is perpendicular to the surface of the substrate 11; after the plasma 14 enters the region where the magnetic field 15 is located, i.e. in the region N2 shown in fig. 3a, the plasma 14 generates a deflection component in a direction parallel to the surface of the substrate 11 under the action of the magnetic field 15, and the direction of the deflection component is perpendicular to the direction of the magnetic field, so that the direction of the plasma after deflection is perpendicular to the direction of the magnetic field, and further, when the direction of the magnetic field is changed, the direction of the plasma deflection is correspondingly changed. As shown in fig. 3a and 3b, a deflection component in the Y-axis direction is generated by the magnetic field 15 in the X-axis direction, so that the moving direction of the plasma 14 is deflected from the Z-axis direction, which is perpendicular to each other and parallel to the surface of the substrate 11, to the Y-axis direction, which is perpendicular to the surface of the substrate 11. The process of deflecting the ion beam in a direction parallel to the surface of the substrate 11 by the magnetic field is the same as the above process.
When the polishing apparatus for a substrate shown in fig. 1 does not include the coil 13, the principle of performing plasma chemical polishing on the surface of the substrate 11 may be: the inert gas and the reactive gas are transported between the anode 121 and the cathode 122, the inert gas is excited by the rf power supply 123 to form uniform and stable chemically inactive plasma, the reactive gas generates chemically active reactive gas ions under the excitation of the plasma, the chemically inactive inert gas ions and the chemically active reactive gas ions are incident on the surface of the substrate 11 along the direction perpendicular to the surface of the substrate 11, the chemically inactive inert gas ions can provide a physical method for polishing the surface of the substrate 11, and the chemically active reactive gas ions chemically react with the material atoms on the surface of the substrate 11 to generate gas products for removing the heterogeneous substances on the surface of the substrate 11 and polishing the surface of the substrate 11. The inert gas ions and the reactive gas ions may be mixed in an optimized ratio to simultaneously remove foreign substances on the substrate 11 and polish.
When the polishing apparatus for a substrate shown in fig. 2 does not include the coil 13, the principle of ion beam polishing the surface of the substrate 11 may be: the inert gas is conveyed between the anode and the cathode in the ionizer 12, the radio frequency power supply in the ionizer 12 is turned on to supply current to the anode and the cathode, the cathode current is heated by a high-frequency electromagnetic oscillation or discharge method and the like, the inert gas is ionized into ion beam current without chemical activity, the ion beam current without chemical activity is accelerated to move towards the surface of the substrate 11 under the action of an electric field, and the ion beam current without chemical activity is made to be incident to the surface of the substrate 11 along the direction vertical to the surface of the substrate 11 so as to sputter and remove atoms on the surface of the substrate 11 one by one, and therefore polishing of the surface of the substrate 11 is achieved.
The plasma chemical polishing of the surface of the substrate 11 is to emit plasma to a large area of the surface of the substrate 11; ion beam polishing of the surface of the substrate 11 is an emission ion beam current to a small area of the surface of the substrate 11.
When the polishing apparatus for a substrate includes the coil 13, the plasma (including inert gas ions having no chemical activity and reactive gas ions having chemical activity) in the embodiment shown in fig. 1 and the ion beam current having no chemical activity in the embodiment shown in fig. 2 are deflected in a direction parallel to the surface of the substrate 11 by the magnetic field, so that most of the plasma and the movement direction of the ion beam are deflected in a direction parallel to the surface of the substrate 11, i.e., a force perpendicular to the surface of the substrate 11 is deflected, so that the surface of the substrate 11 is polished, and the impact of the plasma and the ion beam to atoms on the surface of the substrate 11 is reduced, thereby reducing impact damage to the surface of the substrate 11; and forces parallel to the surface of the substrate 11 are mainly used to remove protrusions (more atoms stacked at protrusions) of the surface of the substrate 11, reducing the removal of material at flat locations on the surface of the substrate 11, and thus reducing damage to the surface of the substrate 11. Therefore, under the action of the magnetic field parallel to the surface of the substrate 11, the surface of the substrate 11 can be polished into an atomic size range, so that the flatness of the surface of the substrate 11 is obviously improved, and the roughness of the surface of the substrate 11 is improved.
And, the movement direction of the plasma and the ion beam is deflected to be parallel to the surface of the substrate 11, so that the plasma and the ion beam can be diffused on the surface of the substrate 11, further, the uniformity of polishing the surface of the substrate 11 can be improved, and the polishing speed can be increased.
Also, it should be noted that, in addition to the fact that most of the plasma and ion beam are deflected so as to be parallel to the surface of the substrate 11, a small portion of the plasma and ion beam travel direction is perpendicular to the surface of the substrate 11 and makes an acute or obtuse angle with the surface of the substrate 11.
Referring to fig. 4a to 4d, fig. 4a is a schematic view of the surface of the substrate 11 before polishing, fig. 4b is a schematic view of the surface of the substrate 11 after polishing by using undeflected plasma or ion beam (i.e., perpendicular to the surface of the substrate 11), fig. 4c is a schematic view of the surface of the substrate 11 after polishing by using deflected plasma or ion beam, fig. 4d is a schematic view of the surface of the substrate 11 after etching by using plasma etching process, and atoms 111 on the surface of the substrate 11 are illustrated in fig. 4a to 4d for illustrating the flatness of the surface of the substrate 11; as can be seen from fig. 4a, before polishing, the position A1 of the surface of the substrate 11 has more similar substrate atoms 111 relative to other positions, i.e. the position A1 of the surface of the substrate 11 has protrusions relative to other positions; as can be seen from fig. 4b, after polishing, although the atoms 111 protruding at the position A1 on the surface of the substrate 11 are removed, the atoms 111 at the positions A2 and A3 are also removed, which means that undeflected plasma or ion beam not only polishes the protruding position but also polishes the flat position outside the protruding position, i.e. the atoms 111 on the flat position on the surface of the substrate 11 are also collided and removed, thereby causing damage to the surface of the substrate 11; as can be seen from fig. 4c, after polishing, only the atoms 111 protruding at the surface position A1 of the substrate 11 are removed, and the atoms 111 at other flat positions are not removed, which means that the plasma or ion beam deflected in the direction parallel to the surface of the substrate 11 polishes only the protruding positions, and the other flat positions are not polished, so that damage to the surface of the substrate 11 can be reduced, and thus the polished surface of the substrate 11 has good flatness and roughness; as can be seen from fig. 4d, the plasma etching process uses chemically active ions, and uses the patterned photoresist layer 16 as a mask to etch and remove the entire surface of the substrate 11 exposed by the patterned photoresist layer 16, i.e. the ion etching removes a portion of the thickness of the substrate 11, and atoms 111 at a position A4 on the surface of the substrate 11 after etching are removed, which also causes damage to the surface of the substrate 11.
In addition, the plasma etching process is used for removing part of the thickness of the substrate 11, and the plasma generated by ionizing fluorine-containing gas and/or chlorine-containing gas is directly used for bombarding the surface of the substrate 11, so that the ion energy is higher and the activity is higher; in addition, a higher direct current bias voltage is adopted in a reaction chamber of the plasma etching process, so that the plasma is accelerated to move towards the surface of the substrate 11 in a direction perpendicular to the substrate 11, and further, larger impact force is generated on the surface of the substrate 11; also, the pressure in the reaction chamber of the plasma etch process is small (e.g., less than 10 mTorr), which also allows the plasma to have a higher energy. Therefore, the plasma etching process has a high removal rate and a high removal speed of the material on the surface of the substrate 11, and causes more damage (such as vacancies, dislocations, etc.) to the surface of the substrate 11.
Whereas the plasma and ion beam polishing employed in fig. 4c is a polishing belonging to the atomic size range, which is used to improve the roughness of the surface of the substrate 11; and, the plasma and ion beam polishing processes employ low energy inactive or low active ions; the reaction chamber in the substrate polishing device does not adopt direct current bias voltage, so that the acceleration of plasma and ion beams can be avoided, and the impact on the surface of the substrate 11 is reduced; the relatively high gas pressure (e.g., greater than 100 mTorr) in the reaction chamber of the substrate polishing apparatus enables ions to have a relatively low energy, thereby enabling control of damage to the surface of the substrate 11. Therefore, the removal rate of the material from the surface of the substrate 11 by plasma and ion beam polishing is low and the removal rate is slow, and damage to the surface of the substrate 11 is less compared to the plasma etching process.
In addition, the larger the current of the coil 13, the larger the number, the stronger the magnetic field generated, and thus the more easily the plasma or the ion beam is deflected in a direction parallel to the surface of the substrate 11.
Preferably, the polishing apparatus for a substrate includes at least four coils 13, and each of the coils 13 is uniformly disposed at the periphery of the substrate 11, i.e., each of the coils 13 is symmetrically disposed with respect to the central axis of the substrate 11 for generating a rotating magnetic field parallel to the surface of the substrate 11. Under the action of the rotating magnetic field, the magnetic field can be distributed more uniformly in each area close to the surface of the substrate 11, so that deflection component force is generated by the plasmas or the ion beams in each direction parallel to the surface of the substrate 11, and further, the plasmas or the ion beams deflected under the action of the rotating magnetic field are distributed more uniformly in each area parallel to the surface of the substrate 11, thereby improving polishing uniformity of each area on the surface of the substrate 11, and further improving flatness of the surface of the substrate 11 after polishing.
It is further preferred that the number of the coils 13 is a positive integer multiple of 4, and that each of the coils 13 is uniformly disposed on the periphery of the substrate 11 so that the magnetic field is more uniformly distributed in each region near the surface of the substrate 11.
When the rotating magnetic field is generated, the coils 13 sequentially and circularly switch the current in the direction surrounding the substrate 11, namely, the coils 13 sequentially and uninterruptedly switch the current in the same direction surrounding the substrate 11, and only one coil 13 is switched in the current at the same time; or, each coil 13 sequentially switches the current in a circulating manner along the direction surrounding the substrate 11, and two coils 13 symmetrically arranged relative to the central axis of the substrate 11 simultaneously switch the current, that is, each coil 13 sequentially and uninterruptedly switches the current along the same direction surrounding the substrate 11, and two coils 13 switch the current at the same time.
And, when the two coils 13 symmetrically arranged relative to the central axis of the substrate 11 are connected with current at the same time, the directions of the currents connected with the two coils 13 symmetrically arranged are opposite, so that the directions of magnetic fields generated by the two coils 13 symmetrically arranged are the same, and the intensity of the magnetic fields is increased, thereby ensuring that the surface polishing of the substrate 11 is more uniform.
Taking the example that the number of the coils 13 is four (for example, the first coil, the second coil, the third coil, and the fourth coil), the generation of the rotating magnetic field will be described: the first coil, the second coil, the third coil and the fourth coil are sequentially and uniformly arranged on the periphery of the substrate 11 in the clockwise direction, the first coil and the third coil are symmetrical relative to the central axis of the substrate 11, and the second coil and the fourth coil are symmetrical relative to the central axis of the substrate 11; the first coil, the second coil, the third coil and the fourth coil can be connected with current in sequence, and only one coil is connected with current at the same time, namely the first coil, the second coil, the third coil and the fourth coil are connected with current in sequence in an uninterrupted manner, so that the rotating magnetic field is generated in a region close to the surface of the substrate 11; alternatively, the first coil and the third coil are connected with currents in opposite directions (at the moment, the second coil and the fourth coil are not connected with currents), and then the second coil and the fourth coil are connected with currents in opposite directions (at the moment, the first coil and the third coil are not connected with currents), so that the rotating magnetic field is generated in a region close to the surface of the substrate 11.
In other embodiments, when the number of the coils 13 is less than or equal to three, or when the number of the coils 13 is at least four and each of the coils 13 fails to sequentially and circularly switch the access current, the magnetic field generated by each of the coils 13 is not a rotating magnetic field, and at this time, the size, the current intensity and the number of the coils 13 can be increased, so that the magnetic field generated by the coils 13 can cover the entire surface of the substrate 11, thereby improving the uniformity of polishing the surface of the substrate 11; at this time, if the current is simultaneously supplied to the two coils 13 symmetrically arranged with respect to the central axis of the substrate 11, the directions of the currents supplied to the two coils 13 symmetrically arranged are opposite, so that the directions of the magnetic fields generated by the two coils 13 symmetrically arranged are the same, and the magnetic field strength is increased, thereby enabling the surface polishing of the substrate 11 to be faster and more uniform.
It should be noted that the polishing apparatus for a substrate is not limited to the above-mentioned components, but may include other desired components, such as a vacuum pumping apparatus for pumping out the gas in the reaction chamber to adjust the gas pressure in the reaction chamber, and for pumping out the gas product generated by the reaction.
As is apparent from the above description, the polishing apparatus for a substrate according to the present invention is provided with at least one coil disposed on the periphery of the substrate, wherein the coil is configured to generate a magnetic field parallel to the surface of the substrate, so that a plasma or an ion beam emitted from the ionizer toward the surface of the substrate is deflected in a direction parallel to the substrate under the action of the magnetic field, and further damage to the surface of the substrate is avoided during polishing, thereby significantly improving the flatness of the surface of the substrate and improving the roughness of the surface of the substrate.
An embodiment of the present invention provides a polishing method of a substrate, referring to fig. 5, as can be seen from fig. 5, the polishing method of the substrate includes:
step S1, providing a substrate;
and step S2, polishing the surface of the substrate by using deflected plasmas or ion beams generated by the polishing device of the substrate.
The polishing method of the substrate provided in this embodiment will be described in detail.
A substrate is provided according to step S1.
The substrate may be made of at least one of quartz, borosilicate, aluminum silicate, silicon carbide, and the like.
And (2) polishing the surface of the substrate by using deflected plasmas or ion beams generated by the polishing device of the substrate according to the step (S2).
The polishing apparatus for the substrate is described above and will not be described in detail herein.
By adjusting the parameters of the intensity of the magnetic field in the polishing device of the substrate, the rotation frequency of the rotating magnetic field, the air pressure in the reaction chamber and the like, the minimum damage to the surface of the substrate 11 during polishing is realized.
The deflected plasmas or ion beams generated by the polishing device of the substrate are used for polishing the surface of the substrate, so that the surface of the substrate is prevented from being damaged in the polishing process, the flatness of the surface of the substrate is obviously improved, and the roughness of the surface of the substrate is improved.
An embodiment of the present invention provides a method for manufacturing a photomask blank, including:
first, a substrate is provided, and the surface of the substrate is polished by adopting the polishing method of the substrate. The polishing method of the substrate is described above, and will not be described in detail herein.
Then, a phase shift layer is formed on the substrate after polishing.
The phase shift layer may be formed on the polished substrate using a sputter deposition process.
The material of the phase shift layer may comprise MoSi x O y N z 。
Then, a light shielding layer is formed on the phase shift layer.
The light shielding layer may be formed on the phase shift layer using a sputter deposition process.
The light shielding layer may be made of Cr, crO 2 At least one of CrN, etc.
Then, a photoresist layer is formed on the light shielding layer.
The photoresist layer may be formed on the light shielding layer by a spin coating process.
The polishing method of the substrate is adopted to polish the surface of the substrate, so that the flatness of the surface of the substrate is obviously improved, the roughness of the surface of the substrate is improved, and the quality of the photomask substrate is further improved.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (12)
1. A polishing apparatus for a substrate, comprising:
an ion generator for emitting a plasma or ion beam toward a surface of the substrate;
and the coil is arranged on the periphery of the substrate and is used for generating a magnetic field parallel to the surface of the substrate so that the plasma or the ion beam deflects to be parallel to the substrate under the action of the magnetic field.
2. The polishing apparatus according to claim 1, wherein the polishing apparatus for a substrate comprises at least four of the coils, each of the coils being uniformly disposed at a periphery of the substrate for generating a rotating magnetic field parallel to a surface of the substrate.
3. A polishing apparatus for a substrate according to claim 2, wherein each of the coils sequentially cyclically switches an access current in a direction surrounding the substrate.
4. A polishing apparatus for a substrate according to claim 3, wherein two of said coils symmetrically disposed with respect to a central axis of said substrate are simultaneously energized.
5. The polishing apparatus according to claim 4, wherein when two of said coils symmetrically disposed with respect to a central axis of said substrate are simultaneously energized, the directions of the energized currents of the two coils are opposite.
6. The apparatus of claim 1, wherein the ionizer comprises an anode, a cathode, and a radio frequency power source, the radio frequency power source being coupled to the anode and the cathode, respectively.
7. The apparatus of claim 6, wherein the ionizer further comprises an inert gas source for delivering an inert gas between the anode and the cathode to generate chemically inactive inert gas ions or chemically inactive ion beams.
8. The apparatus of claim 7, wherein the ionizer is configured to emit plasma toward the surface of the substrate, the ionizer further comprising a reactive gas source configured to deliver a reactive gas between the anode and the cathode to generate chemically reactive gas ions.
9. The polishing apparatus for a substrate according to claim 1, wherein the polishing apparatus for a substrate further comprises:
the coil is arranged at the periphery of the reaction chamber, and the ion generator is connected with the reaction chamber.
10. The apparatus of claim 9, wherein the gas pressure in the reaction chamber is greater than 100mTorr.
11. A method of polishing a substrate, comprising:
providing a substrate;
polishing the surface of the substrate with a deflected plasma or ion beam generated by a polishing apparatus for a substrate according to any one of claims 1 to 10.
12. A method of manufacturing a photomask blank, comprising:
providing a substrate, and polishing the surface of the substrate by adopting the polishing method of the substrate according to claim 11;
forming a phase shift layer on the polished substrate;
forming a light shielding layer on the phase shift layer;
forming a photoresist layer on the shading layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310819751.5A CN116748959A (en) | 2023-07-05 | 2023-07-05 | Polishing device and method for substrate and manufacturing method for photomask base plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310819751.5A CN116748959A (en) | 2023-07-05 | 2023-07-05 | Polishing device and method for substrate and manufacturing method for photomask base plate |
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| CN116748959A true CN116748959A (en) | 2023-09-15 |
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| CN202310819751.5A Pending CN116748959A (en) | 2023-07-05 | 2023-07-05 | Polishing device and method for substrate and manufacturing method for photomask base plate |
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| Country | Link |
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| CN (1) | CN116748959A (en) |
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- 2023-07-05 CN CN202310819751.5A patent/CN116748959A/en active Pending
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