CN116525401A - Microchannel plate conducting layer structure and preparation method thereof - Google Patents
Microchannel plate conducting layer structure and preparation method thereof Download PDFInfo
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- CN116525401A CN116525401A CN202310525779.8A CN202310525779A CN116525401A CN 116525401 A CN116525401 A CN 116525401A CN 202310525779 A CN202310525779 A CN 202310525779A CN 116525401 A CN116525401 A CN 116525401A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 34
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000002131 composite material Substances 0.000 claims abstract description 33
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000002243 precursor Substances 0.000 claims abstract description 10
- 239000012159 carrier gas Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 52
- 230000008569 process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012681 fiber drawing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
- H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a microchannel plate conducting layer structure and a preparation method thereof, wherein the conducting layer structure comprises a microchannel plate substrate, and Al is arranged on the microchannel plate substrate 2 O 3 A substrate of Al 2 O 3 A plurality of layers of composite films are arranged on the substrate, and the composite films comprise Al 2 O 3 Film and TiN film, tiN/Al film 2 O 3 The composite ceramic film is used as the conductive layer of the microchannel plate, and the thickness of the TiN film is set to regulate and control the volume resistance of the microchannel plate in the order of tens to hundreds of megaohms, thereby meeting the requirements of different application scenes and being used in the following fieldsThe body resistance of the conductive layer is less changed when different bias voltages are applied, so that the stability of the conductive layer of the microchannel plate is improved. The preparation method uses atomic layer deposition technique to alternately adjust TiN and Al 2 O 3 Preparing TiN/Al from the precursor required by the material 2 O 3 The composite ceramic film serves as a conductive layer of the microchannel plate. At Al 2 O 3 When the atomic layer deposition times of the micro-channel plate are fixed, the volume resistance of the micro-channel plate is obviously reduced along with the increase of the TiN atomic layer deposition times in the sub-cycle.
Description
Technical Field
The invention belongs to the technical field of new materials, and relates to a microchannel plate conductive layer structure and a preparation method thereof.
Background
The micro-channel plate is a two-dimensional device formed by arranging thousands of tiny micro-channels with continuous electron multiplication capacity according to a certain geometric rule, has the advantages of high electron gain, quick time response, high spatial resolution, low power loss and the like, and is widely applied to the fields of low-light night vision technology, time-of-flight mass spectrometers, particle detection, photomultiplier and the like. The traditional microchannel plate substrate is prepared by adopting a glass multi-fiber drawing technology, and then lead in the high-lead glass microchannel array substrate is reduced from lead oxide to lead through hydrogen reduction treatment, and a conductive layer and a secondary electron emission layer are formed on the inner wall surface of the microchannel. The traditional microchannel plate has the defects of low secondary electron emission coefficient, small adjustable range of resistivity of the conducting layer, high surface roughness in the channel, low service life and the like. By adopting the atomic layer deposition technology, proper materials can be freely selected, the conductive layer and the secondary electron emission layer are sequentially deposited on the inner wall of the channel, and the performance of the microchannel plate is greatly improved.
When the microchannel plate works, the voltage applied to the two ends can conduct current in the conductive layer to form a belt current, the belt current can form an electric field almost parallel to the axial direction of the channel in the channel, and meanwhile, electrons are supplemented to the electron depletion region of the inner wall of the channel. The excessive resistivity of the conductive layer can lead to the fact that charges cannot be timely supplemented, so that the gain of the microchannel plate is saturated in advance, and the excessive resistivity can lead to the excessive current in the microchannel plate, so that the microchannel plate is damaged by thermal effect. The conductive layer plays a very important role in the performance of the microchannel plate. At present, the types of conducting layer films prepared by atomic layer deposition are fewer, the AZO composite film can meet the requirements of a conducting layer, the preparation process is mature, but the AZO composite film has different resistivities under different voltages, the resistivities are reduced along with the increase of the voltages, and the microchannel plate needs to have more stable volume resistance during operation.
Disclosure of Invention
The invention aims to solve the problem that a micro-channel plate conductive layer film in the prior art has different resistivities under different voltages, and the resistivities can be reduced along with the increase of the voltages, so that the micro-channel plate is unstable in operation.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
a microchannel plate conductive layer structure comprises a microchannel plate substrate provided with Al 2 O 3 Substrate, al 2 O 3 A plurality of layers of composite films are arranged on the substrate, and the composite films comprise Al 2 O 3 Thin films and TiN thin films.
The invention further improves that:
the Al is 2 O 3 The thickness of the substrate was 2nm.
The Al is 2 O 3 The thickness of the film was 1.4nm.
The thickness of the TiN film is 4.2-6.6 nm.
A preparation method of a microchannel plate conductive layer structure comprises the following steps:
first, al is covered on a microchannel plate substrate 2 O 3 A substrate for ensuring adhesion between the composite film and the microchannel plate substrate;
then preparing a composite film, wherein Al is 2 O 3 Performing several times of original treatment on the substratePreparation of Al by sublayer deposition cycle 2 O 3 Preparing a TiN film by carrying out atomic layer deposition cycle for a plurality of times;
judging whether the thickness of the composite film reaches 80nm, and if so, finishing the preparation; if not, the preparation of the composite film is repeated.
The preparation of Al 2 O 3 14 atomic layer deposition cycles are carried out when the film is formed, and 7-11 atomic layer deposition cycles are carried out when the TiN film is prepared.
Preparation of Al by atomic layer deposition 2 O 3 The film specifically comprises the following steps:
setting the reaction temperature and the gas flow of carrier gas in the experimental cavity;
using N 2 TMA and H as carrier gases 2 O is used as a precursor of the reaction;
introducing TMA for 0.5s, introducing N 2 Duration 10s;
then let in H 2 O duration is 0.5s, and then N is introduced 2 For a duration of 10s.
The reaction temperature in the experimental cavity is set to 200 ℃, and the gas flow of the carrier gas is set to 400sccm.
The preparation of the TiN film by the atomic layer deposition specifically comprises the following steps:
setting the reaction temperature and the gas flow of carrier gas in the experimental cavity;
using N 2 TiCl as carrier gas 4 And NH 3 As a precursor for the reaction;
TiCl is introduced into the reactor 4 Duration 0.3s, N is introduced 2 Duration 15s;
then NH is introduced into 3 Duration 10s; then let in N 2 Duration 20s.
The reaction temperature in the experimental cavity is set to 350 ℃, and the gas flow of the carrier gas is set to 200sccm.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a microchannel plate conducting layer structure,disposing Al on a microchannel substrate 2 O 3 A substrate of Al 2 O 3 A plurality of layers of composite films are arranged on the substrate, and the composite films comprise Al 2 O 3 Film and TiN film, tiN/Al film 2 O 3 The composite ceramic film is used as the conductive layer of the microchannel plate, and the thickness of the TiN film is set to regulate and control the volume resistance of the microchannel plate in the order of tens to hundreds of megaohms, thereby meeting the requirements of different application scenes and improving the stability of the conductive layer of the microchannel plate.
The invention also provides a preparation method of the micro-channel plate conductive layer structure, which uses atomic layer deposition technology to alternately adjust TiN and Al 2 O 3 Preparing TiN/Al from the precursor required by the material 2 O 3 The composite ceramic film serves as a conductive layer of the microchannel plate. Al during sub-cycle 2 O 3 When the atomic layer deposition times of the micro-channel plate are fixed, the volume resistance of the micro-channel plate can be regulated and controlled on the order of tens to hundreds of megaohms by controlling the atomic layer deposition times of TiN in the sub-cycle number so as to meet the requirements of different application scenes. And under the test condition of applying different bias voltages, the micro-channel plate has small volume resistance difference, and the stability of the conductive layer in the working process is improved.
Drawings
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a conductive layer of a microchannel plate according to the present invention;
fig. 2 is a flowchart of a method for manufacturing a conductive layer structure of a microchannel plate according to the present invention.
Wherein: 1-a microchannel substrate; 2-Al 2 O 3 A substrate; 3-Al 2 O 3 A film; 4-TiN film.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the embodiments of the present invention, it should be noted that, if the terms "upper," "lower," "horizontal," "inner," and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the term "horizontal" if present does not mean that the component is required to be absolutely horizontal, but may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The invention is described in further detail below with reference to the attached drawing figures:
referring to FIG. 1, a microchannel plate conductive layer structure according to the present invention comprises a microchannel plate substrate provided with Al 2 O 3 Substrate, al 2 O 3 A plurality of layers of composite films are arranged on the substrate, and the composite films comprise Al 2 O 3 Thin films and TiN thin films. The total thickness of the conductive layer structure exceeds 80nm, al 2 O 3 The thickness of the substrate is 2nm, al 2 O 3 The thickness of the film is 1.4nm, and the thickness of the TiN film is 4.2-6.6 nm.
Referring to fig. 2, the preparation method of the conductive layer structure of the microchannel plate in the invention specifically includes the following steps:
s1, firstly, covering Al on a microchannel plate substrate 2 O 3 And the substrate is used for ensuring the adhesive force between the composite film and the microchannel plate substrate.
S2, preparing a composite film, wherein the composite film is formed by using Al 2 O 3 Al is prepared by atomic layer deposition cycle for a plurality of times on the substrate 2 O 3 And (3) performing atomic layer deposition cycle for a plurality of times to prepare the TiN film.
S2.1, preparing Al by utilizing atomic layer deposition process 2 O 3 In the case of films, N is used 2 As carrier gases, TMA and H were used as precursors for the reaction 2 O. In the preparation process, the reaction temperature in the experimental cavity is set to be 200 ℃, and the gas flow of the carrier gas is 400sccm. Firstly, TMA is introduced for 0.5s, N is introduced 2 Duration 10s; then let in H 2 O duration 0.5s; then let in N 2 For a duration of 10s. The atomic layer deposition cycle was completed once, and the thickness of the film formed by the atomic layer deposition cycle was 0.1nm under the parameter conditions used in the preparation process of the present invention.
S2.2, when preparing TiN film by utilizing atomic layer deposition process, N is used 2 As carrier gas, tiCl is used as precursor for reaction 4 And NH 3 . In the preparation process, the reaction temperature in the cavity is 350 ℃, and the gas flow of the carrier gas is 200sccm. TiCl is firstly introduced 4 Duration 0.3s, N is introduced 2 Duration 15s; then NH is introduced into 3 Duration 10s; then let in N 2 Duration 20s. The atomic layer deposition cycle was completed once, and the thickness of the film formed by the atomic layer deposition cycle was 0.6nm under the parameter conditions used in the preparation process of the present invention.
S3, judging whether the thickness of the composite film reaches 80nm, and if so, finishing the preparation; if not, the preparation of the composite film is repeated.
TiN/Al 2 O 3 The composite ceramic film is prepared by alternately adjusting precursors of two materials in the atomic layer deposition process. Before depositing the composite film, al with a thickness of 2nm is deposited on the surface of the microchannel plate substrate 2 O 3 The film is primed to ensure adhesion of the film to the substrate. Then starting to prepare a composite film, depositing Al 2 O 3 Film, al 2 O 3 The atomic layer deposition cycle number of the film is 14, then the TiN film is deposited, the atomic layer deposition cycle number of the TiN film is 7-11, and one sub-cycle process is finished. The total subcycling times are controlled so that the thickness of the prepared film, namely the conductive layer, exceeds 80nm.
Referring to table 1, the microchannel plate conductive layer structure prepared by the preparation method of the present invention was subjected to a bulk resistance test, and the bulk resistance of the microchannel plate was significantly reduced as the number of TiN atomic layer deposition cycles in the sub-cycle was increased. When different bias voltages are applied, the measured resistances of the micro-channel plates have certain differences, but the differences of the test results are small, which indicates that the conductive layer prepared by the preparation method has good stability.
TABLE 1 Microchannel plate resistance test results at different bias voltages
The invention alternately adjusts TiN and Al by utilizing atomic layer deposition technology 2 O 3 Preparing TiN/Al from the precursor required by the material 2 O 3 The composite ceramic film serves as a conductive layer of the microchannel plate. Al during sub-cycle 2 O 3 When the atomic layer deposition times of the micro-channel plate are fixed, the volume resistance of the micro-channel plate can be regulated and controlled on the order of tens to hundreds of megaohms by controlling the atomic layer deposition times of TiN in the sub-cycle number so as to meet the requirements of different application scenes. And under the test condition of applying different bias voltages, the micro-channel plate has small volume resistance difference, and the stability of the conductive layer in the working process is improved.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The microchannel plate conducting layer structure is characterized by comprising a microchannel plate substrate (1), wherein Al is arranged on the microchannel plate substrate (1) 2 O 3 Substrate (2), al 2 O 3 A plurality of layers of composite films are arranged on the substrate (2), and the composite films comprise Al 2 O 3 A film (3) and a TiN film (4).
2. The microchannel plate conductive layer structure of claim 1, wherein the Al 2 O 3 The thickness of the substrate was 2nm.
3. The microchannel plate conductive layer structure of claim 1, wherein the Al 2 O 3 The thickness of the film was 1.4nm.
4. The microchannel plate conductive layer structure of claim 1, wherein the TiN film has a thickness of 4.2-6.6 nm.
5. The preparation method of the microchannel plate conductive layer structure is characterized by comprising the following steps of:
first, al is covered on a microchannel plate substrate 2 O 3 A substrate for ensuring adhesion between the composite film and the microchannel plate substrate;
then preparing a composite film, wherein Al is 2 O 3 Al is prepared by atomic layer deposition cycle for a plurality of times on the substrate 2 O 3 Preparing a TiN film by carrying out atomic layer deposition cycle for a plurality of times;
judging whether the thickness of the composite film reaches 80nm, and if so, finishing the preparation; if not, the preparation of the composite film is repeated.
6. The method for preparing a conductive layer structure of a micro-channel plate as claimed in claim 5, wherein said preparing Al 2 O 3 14 atomic layer deposition cycles are carried out when the film is formed, and 7-11 atomic layer deposition cycles are carried out when the TiN film is prepared.
7. The method of fabricating a conductive layer structure of a microchannel plate as set forth in claim 5, wherein Al is prepared by atomic layer deposition 2 O 3 The film specifically comprises the following steps:
setting the reaction temperature and the gas flow of carrier gas in the experimental cavity;
using N 2 TMA and H as carrier gases 2 O is used as a precursor of the reaction;
introducing TMA for 0.5s, introducing N 2 Duration 10s;
then let in H 2 O duration is 0.5s, and then N is introduced 2 For a duration of 10s.
8. The method of claim 7, wherein the reaction temperature in the experimental chamber is set to 200 ℃ and the gas flow rate of the carrier gas is set to 400sccm.
9. The method for preparing a conductive layer structure of a microchannel plate as claimed in claim 5, wherein preparing a TiN film by atomic layer deposition comprises the following steps:
setting the reaction temperature and the gas flow of carrier gas in the experimental cavity;
using N 2 TiCl as carrier gas 4 And NH 3 As a precursor for the reaction;
TiCl is introduced into the reactor 4 Duration 0.3s, N is introduced 2 Duration 15s;
then NH is introduced into 3 Duration 10s; then let in N 2 Duration 20s.
10. The method of claim 9, wherein the reaction temperature in the experimental chamber is set to 350 ℃ and the gas flow rate of the carrier gas is set to 200sccm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310525779.8A CN116525401A (en) | 2023-05-10 | 2023-05-10 | Microchannel plate conducting layer structure and preparation method thereof |
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| CN202310525779.8A CN116525401A (en) | 2023-05-10 | 2023-05-10 | Microchannel plate conducting layer structure and preparation method thereof |
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