CN1165133A - 制备三甲基氢醌的方法 - Google Patents
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- CN1165133A CN1165133A CN97104282.9A CN97104282A CN1165133A CN 1165133 A CN1165133 A CN 1165133A CN 97104282 A CN97104282 A CN 97104282A CN 1165133 A CN1165133 A CN 1165133A
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C37/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
- C07C37/01—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by replacing functional groups bound to a six-membered aromatic ring by hydroxy groups, e.g. by hydrolysis
- C07C37/055—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by replacing functional groups bound to a six-membered aromatic ring by hydroxy groups, e.g. by hydrolysis the substituted group being bound to oxygen, e.g. ether group
- C07C37/0555—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by replacing functional groups bound to a six-membered aromatic ring by hydroxy groups, e.g. by hydrolysis the substituted group being bound to oxygen, e.g. ether group being esterified hydroxy groups
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/08—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides with the hydroxy or O-metal group of organic compounds
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Abstract
本发明涉及制备2,3,5-三甲基氢醌的改进方法,该方法是将4-氧-异佛尔酮(酮基—异佛尔酮,3,5,5-三甲基-环己-2-烯-1,4-二酮)重排成三甲基氢醌二酯,然后进行皂化。三甲基氢醌仍是制备维生素E的重要原料。
Description
本发明涉及制备2,3,5-三甲基氢醌的改进方法,该方法是将4-氧-异佛尔酮(酮基-异佛尔酮,3,5,5-三甲基-环己-2-烯-1,4-二酮)重排成三甲基氢醌二酯,然后进行皂化。
三甲基氢醌仍是制备维生素E的重要原料。
用沸石将气相的酮基-异佛尔酮重排为三甲基氢醌已是周知的(DE26 46 172C2)。然而该反应的产率非常低(共50-30%),因而不适于作为经济的方法。在另一种方法(Y.A.Joe,Y.M.Goo,Y.Y.Lee Bull.Korean.Chem.Soc.1991,12,253)中,重排是通过在5%的醋酐溶液中添加5当量的浓硫酸来完成的。由此得到三甲基氢醌酯,而其产率只有31%,因此,此方法也是不经济的。
根据第三种方法(DE-OS 2149159),在有质子酸存在下,在醋酐中将酮基-异佛尔酮重排为三甲基氢醌二乙酸酯,然后再将该酯皂化为2,3,5-三甲基氢醌。该方法的缺点在于:
·使用大量的醋酐(5-10mol/mol酮基-异佛尔酮)
·使用大量的作为催化剂的酸(150mol%)
·产率最大只有66%。
现在发现一种制备三甲基氢醌(TMHQ)的方法,其是用乙酰化试剂,在催化剂量的质子酸存在下,使酮基-异佛尔酮重排,然后对刚形成的三甲基氢醌酯进行皂化,该方法的特征在于,以最终离子(Endion)计,使用0.1-50wt%,特别是0.5-25wt%的质子酸,所述的质子酸为三氟甲基磺酸、氯磺酸、多磷酸或发烟硫酸或它们的混合物。对每摩尔酮基-异佛尔酮,优选使用>2-4mol,特别是2.1-3mol的已知乙酰化试剂。
在根据本发明的方法中,乙酰化试剂优选为羧酸酐或烯醇酯。羧酸酐优选具有以下通式:其中,R为具有1-8个碳原子的取代的脂基、脂族环基或芳香基,其有时也可含有1-3个卤原子。特别优选使用的酸酐是醋酐。其他合适的酸酐有丙酸酐、丁酸酐、异丁酸酐、环己酸酐、苯甲酸酐、氯乙酸酐、三氟乙酸酐和三氟甲基磺酸酐。
在一优选的实施例中,对形成的TMHQ-二乙酸酯不作分离就进行皂化,有时是蒸馏掉未反应的乙酸酐后再通过添加水或稀酸、特别是硫酸对其进行皂化,然后加热混合物至沸腾。然后过滤形成的TMHQ。
也可通过添加水来从反应混合物中分离出形成的TMHQ-二乙酸酯,并在稀酸、特别是硫酸中,在相调和剂(Phasenvermittler)的存在下,进行水解,然后分离出形成的TMHQ,特别是通过过滤来分离。
在皂化已分离出的三甲基氢醌二酯中,相调和剂可以使用所有的与水相混溶的有机溶剂。优选使用的是乙酸、正丁醇和乙酸正丁酯或所述溶剂的混合物。
在根据本发明的方法制备2,3,5-三甲基氢醌时,在一种“一锅烩”的方法中,以酮基-异佛尔酮计,例如将0.2mol的酮基-异佛尔酮在0-60℃下于1-3小时内滴入>0.4-0.6mol的乙酸酐与0.1-50wt%、特别是0.5-25wt%已知的非常浓的酸的混合物中,然后在25-70℃下加热1-7小时。然后通过添加足够量的水使残留的乙酸酐水解。在形成的悬浮液中加入例如硫酸,其浓度优选约为30%,然后加热至沸腾1-5小时。然后蒸馏出部分溶剂,再用相同量的水来代替,将该悬浮液冷却至室温,然后分离出形成的三甲基氢醌。
也可以在第一次添加水后,分离出形成的三甲基氢醌二酯,然后进行单独的皂化。为此,将三甲基氢醌二酯悬浮于例如足够量的稀酸、优选为30%硫酸和相调和剂例如正丁醇中,然后加热至沸腾1-7小时。移走馏出物,然后向容器中添加相同量的水。分离出由此形成的三甲基氢醌,然后水洗纯制。
在以下的实施例中对本发明做进一步的阐明。
与现有技术相比,本发明之制备2,3,5-三甲基氢醌的方法具有以下的明显优点:
·本发明方法的产率要比对比文献的高出25%,在85-90%之间。
·所需的催化剂的量在0.1-50%之间,而对比文献的为150%。
·每摩尔酮基-异佛尔酮需要>2-4mol的羧酸酐,而对比文献的需要5-10mol。
·用含水酸对已分离的三甲基氢醌二酯皂化优选在有相调和剂存在下进行,此方法简便。实施例1
在30-40℃下,于1.5小时内向61g(0.6mol)乙酸酐与0.34g(2.3mmol)三氟甲基磺酸的溶液中滴加30.5g(0.2mol)酮基-异佛尔酮(98%)。然后在40℃下反应3小时。反应完毕后,在冷却下加入125ml水,吸滤出形成的三甲基氢醌二乙酸酯,然后洗涤,并在55℃下真空干燥14小时。产率:45.0g(理论值的95%)GC :94.5%THQ-二乙酸酯实施例2
在加热下,将43g(0.18mol)TMHQ-二乙酸酯溶解于100ml 30%硫酸和15ml正丁醇的混合物中,然后加热至沸腾4小时。之后在45分钟内蒸出80ml的馏出物,向其中再掺入100ml水。在20℃吸滤出形成的三甲基氢醌,然后洗涤,并在55℃下干燥14小时。产率:26.2g(理论值的95%)HPLC:98.5%实施例2a
在另一皂化作用中,用2.30g硫酸和50ml水代替正丁醇和30%硫酸,加入至50ml实施例2中的馏出物的混合物中。实施例3
重复实施例1的实验,其中,此次在反应后,蒸馏出30g的乙酸酐与乙酸的混合物。其余的步骤相似。产率:45.5gTMHQ-二乙酸酯(理论值的96%)实施例4
重复实施例2的实验,其中,此次在过滤产物之前,将混合物冷却至-10℃。产率:理论值的26.9gHPLC:95%实施例5-7
重复实施例1的实验,其中,使用其他的催化剂来代替三氟甲基磺酸。
实施例8(直接法)
实施例 | 催化剂 | 催化剂量(wt%) | 反应时间/温度(h/℃) | 产率TMHQ-DA(%) | |
5 | 氯磺酸 | 7 | 3 | 75 | 93 |
6 | 发烟硫酸65%SO3 | 10 | 3 | 35 | 94 |
7 | 发烟硫酸30%SO3 | 8 | 7 | 35 | 94 |
在10-25℃下,于1.5小时内向61g(0.6mol)乙酸酐与3g发烟硫酸(65%SO3)的混合物中滴加30.5g(0.2mol)酮基-异佛尔酮,然后在40℃下加热4小时。然后加入90ml水进行水解。在形成的悬浮液中加入47g硫酸,然后加热至沸腾3小时。其他步骤与实施例2的相似。产率:27gTMHQ(理论值的89%)HPLC:98.5%
Claims (7)
1、制备三甲基氢醌(TMHQ)的方法,其是用乙酰化试剂,在催化剂量的质子酸存在下,使酮基-异佛尔酮重排,然后对刚形成的三甲基氢醌酯进行皂化,该方法的特征在于,所述的质子酸为三氟甲基磺酸、氯磺酸、多磷酸或发烟硫酸或这些酸的混合物。
2、如权利要求1的方法,其特征在于,以最终离子计,使用0.1-50wt%,特别是0.5-25wt%的所述酸。
3、如权利要求1或2的方法,其特征在于,每摩尔酮基-异佛尔酮使用>2-4mo1的乙酰化试剂。
4、如权利要求3的方法,其特征在于,使用乙酸酐作为乙酰化试剂。
5、如权利要求1的方法,其特征在于,形成的TMHQ-二乙酸酯不经分离,必要时蒸出未反应的乙酸酐,即通过添加水或稀酸对其进行皂化,然后分离形成的TMHQ。
6、如权利要求1的方法,其特征在于,在添加水后将形成的TMHQ-二酯从反应混合物中分离出来,然后在有相调和剂的存在下,使用稀酸进行皂化,再分离形成的TMHQ。
7、如权利要求6的方法,其特征在于,相调和剂为乙酸、正丁醇或正丁酯或它们的混合物。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE19619387 | 1996-05-14 | ||
DE19627977.1 | 1996-07-11 | ||
DE19619387.7 | 1996-07-11 | ||
DE19627977A DE19627977A1 (de) | 1996-05-14 | 1996-07-11 | Verfahren zur Herstellung von Trimethylhydrochinon |
Publications (2)
Publication Number | Publication Date |
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CN1165133A true CN1165133A (zh) | 1997-11-19 |
CN1102138C CN1102138C (zh) | 2003-02-26 |
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CN97104282A Expired - Fee Related CN1102138C (zh) | 1996-05-14 | 1997-05-12 | 制备三甲基氢醌的方法 |
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US (1) | US6063968A (zh) |
EP (1) | EP0808815B1 (zh) |
JP (1) | JPH1053548A (zh) |
CN (1) | CN1102138C (zh) |
AT (1) | ATE204251T1 (zh) |
DK (1) | DK0808815T3 (zh) |
ES (1) | ES2162147T3 (zh) |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP0850910B1 (en) * | 1996-12-27 | 2001-11-21 | Daicel Chemical Industries, Ltd. | A method for producing trimethylhydroquinone diester |
US6211418B1 (en) | 1997-08-01 | 2001-04-03 | Nippon Petrochemicals Company Limited | Method for producing trimethylhydroquinone |
DE19805690A1 (de) * | 1998-02-12 | 1999-08-19 | Degussa | Verfahren zur Herstellung von Trimethydrochinondiestern und von Trimethylhydrochinon |
DE19905685A1 (de) * | 1999-02-11 | 2000-08-17 | Degussa | Verfahren zur Herstellung von 2,3,5-Trimethylhydrochinondiestern |
DE19951006A1 (de) * | 1999-10-22 | 2001-04-26 | Degussa | Verfahren zur Herstellung von veresterten Chromanverbindungen |
KR100645669B1 (ko) * | 2001-10-04 | 2006-11-13 | 에스케이 주식회사 | 고수율 및 고순도로tmhq-디에스테르를 제조하는 방법 |
EP1680392B1 (en) * | 2003-11-07 | 2008-06-04 | DSM IP Assets B.V. | Process for the preparation of 2,3,5-trimethylhydroquinone diacylates |
US7102191B2 (en) * | 2004-03-24 | 2006-09-05 | Micron Technologies, Inc. | Memory device with high dielectric constant gate dielectrics and metal floating gates |
JP2009079024A (ja) * | 2007-09-27 | 2009-04-16 | Air Water Inc | 2−ナフトール誘導体の製造方法 |
JP5195236B2 (ja) * | 2008-09-30 | 2013-05-08 | Dic株式会社 | 2−ナフトール誘導体の製造方法 |
US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
TW202414634A (zh) | 2016-10-27 | 2024-04-01 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
US10515913B2 (en) | 2017-03-17 | 2019-12-24 | Invensas Bonding Technologies, Inc. | Multi-metal contact structure |
US10446441B2 (en) | 2017-06-05 | 2019-10-15 | Invensas Corporation | Flat metal features for microelectronics applications |
US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US10790262B2 (en) | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
US11244916B2 (en) | 2018-04-11 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
KR20210009426A (ko) | 2018-06-13 | 2021-01-26 | 인벤사스 본딩 테크놀로지스 인코포레이티드 | 패드로서의 tsv |
US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
US11244920B2 (en) | 2018-12-18 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Method and structures for low temperature device bonding |
US11735523B2 (en) | 2020-05-19 | 2023-08-22 | Adeia Semiconductor Bonding Technologies Inc. | Laterally unconfined structure |
US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
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UST900015I4 (en) * | 1970-10-01 | 1972-07-25 | defensive publication |
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- 1997-04-05 AT AT97105669T patent/ATE204251T1/de not_active IP Right Cessation
- 1997-04-05 ES ES97105669T patent/ES2162147T3/es not_active Expired - Lifetime
- 1997-04-05 EP EP97105669A patent/EP0808815B1/de not_active Expired - Lifetime
- 1997-04-05 DK DK97105669T patent/DK0808815T3/da active
- 1997-05-12 CN CN97104282A patent/CN1102138C/zh not_active Expired - Fee Related
- 1997-05-12 JP JP9120403A patent/JPH1053548A/ja not_active Abandoned
- 1997-05-14 US US08/855,270 patent/US6063968A/en not_active Expired - Fee Related
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Publication number | Publication date |
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EP0808815A2 (de) | 1997-11-26 |
CN1102138C (zh) | 2003-02-26 |
ATE204251T1 (de) | 2001-09-15 |
ES2162147T3 (es) | 2001-12-16 |
US6063968A (en) | 2000-05-16 |
DK0808815T3 (da) | 2001-11-26 |
EP0808815B1 (de) | 2001-08-16 |
JPH1053548A (ja) | 1998-02-24 |
EP0808815A3 (de) | 1998-02-04 |
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