CN116516477A - Single crystal furnace guide cylinder and single crystal furnace - Google Patents
Single crystal furnace guide cylinder and single crystal furnace Download PDFInfo
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- CN116516477A CN116516477A CN202310685822.7A CN202310685822A CN116516477A CN 116516477 A CN116516477 A CN 116516477A CN 202310685822 A CN202310685822 A CN 202310685822A CN 116516477 A CN116516477 A CN 116516477A
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- 239000013078 crystal Substances 0.000 title claims abstract description 162
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 239000012774 insulation material Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 45
- 230000017525 heat dissipation Effects 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application is applicable to the technical field of semiconductors and provides a single crystal furnace guide cylinder and a single crystal furnace. The single crystal furnace guide cylinder comprises: the device comprises an outer guide cylinder and an inner guide cylinder arranged in the outer guide cylinder; the inner guide cylinder comprises a conical cylinder part and a straight cylinder part; the conical cylinder part is close to the furnace mouth of the single crystal furnace, and the straight cylinder part is close to the furnace bottom of the single crystal furnace; the cone-shaped part is of an inverted cone-shaped structure, and the lower opening of the cone-shaped part is connected with the upper opening of the straight-shaped part. The single crystal furnace guide cylinder can effectively reduce the temperature gradient difference between the center and the edge of a single crystal in the radial direction of a solid-liquid growth interface, improve the uniformity of radial V/G of the solid-liquid growth interface, and increase the heat dissipation of the upper half part of the single crystal at the same time, so that the size and the number of COP defects in the single crystal grown by direct pulling are reduced.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a single crystal furnace guide cylinder and a single crystal furnace.
Background
Czochralski crystals produce vacancy defects during growth which gradually accumulate during the crystal growth to form crystal originated (Crystal Originated Particles, COP) defects. The size of COP defects determines the linewidth limit of devices for integrated circuits, affecting device performance and yield. Therefore, reducing the number and size of COP defects is a critical requirement for single crystals. The low COP defect means that the number of COP defects having a size larger than a preset size threshold is smaller than a preset number threshold, for example, in a silicon single crystal, the low COP defect is that the number of COP defects having a size larger than 0.12 μm is smaller than a certain value.
When a single crystal is grown, the ratio of the pulling rate at the solid-liquid growth interface to the temperature gradient (V/G, where V represents the pulling rate and G represents the temperature gradient) affects the COP defect in the single crystal. Meanwhile, the COP defect in the single crystal is influenced by the cooling speed of the single crystal. Taking silicon single crystal growth as an example, COP defects are silicon vacancies (Si) generated at the solid-liquid growth interface during single crystal growth V ) Intrinsic defects are generated by aggregation growth in the temperature range of 1000-1050 ℃. The larger the concentration of silicon vacancy present evidence defects, the slower the single crystal temperature drop in the temperature range of 1000 ℃ to 1050 ℃, the larger the number of COP defects, and the larger the size of COP defects.
A single crystal furnace is an apparatus for melting polycrystalline material and growing single crystals by a Czochralski method. In the process of pulling up single crystals, the guide cylinder is mainly used for controlling the thermal field. However, in the related art, when the conventional guide cylinder is used for controlling the thermal field, the radial temperature gradient difference of the single crystal is large, so that the V/G variation of the single crystal in the radial direction is large, the cooling speed of the single crystal is low, and finally, a large number of COP defects exist in the single crystal grown by Czochralski, so that the application range of the single crystal is limited.
Disclosure of Invention
In view of this, the embodiment of the application provides a single crystal furnace guide cylinder and a single crystal furnace, so as to solve the technical problems that when a conventional guide cylinder in the related art controls a thermal field, radial temperature difference of single crystals is large, cooling of the single crystals is slow, and a large number of COP defects exist in the single crystals grown by Czochralski.
In a first aspect, embodiments of the present application provide a single crystal furnace guide shell, including: the device comprises an outer guide cylinder and an inner guide cylinder arranged in the outer guide cylinder; the inner guide cylinder comprises a conical cylinder part and a straight cylinder part; the conical cylinder part is close to the furnace mouth of the single crystal furnace, and the straight cylinder part is close to the furnace bottom of the single crystal furnace; the cone-shaped part is of an inverted cone-shaped structure, and the lower opening of the cone-shaped part is connected with the upper opening of the straight-shaped part.
In a possible implementation manner of the first aspect, the height of the straight cylinder part is a difference between the length of the sliding line and the liquid port distance; the length of the slip line is the length of the slip line which generates dislocation when pulling; the liquid port distance is the distance from the lower edge of the single crystal furnace guide cylinder to the liquid level in the crucible, and the crucible is positioned below the single crystal furnace guide cylinder.
In one possible implementation of the first aspect, the thermal conductivity of the conical cylinder part is greater than the thermal conductivity of the straight cylinder part.
In a possible implementation manner of the first aspect, the included angle between the conical generatrix of the conical cylinder part and the vertical direction is within a preset angle range, wherein the preset angle range is greater than 25 degrees and less than 35 degrees.
In a possible implementation manner of the first aspect, the cone member and the straight member are of a one-piece structure.
In a possible implementation manner of the first aspect, the inner wall of the conical cylinder part is provided with a first inner liner, and the outer wall of the straight cylinder part is provided with a second inner liner.
In a possible implementation manner of the first aspect, a cavity is arranged between the outer guide cylinder and the inner guide cylinder, and the cavity is filled with a heat insulation material.
In one possible embodiment of the first aspect, the insulation material is a carbon felt and/or a cured felt.
In a possible implementation manner of the first aspect, the outer guide shell and the inner guide shell are coaxially arranged.
In a second aspect, embodiments of the present application provide a single crystal furnace, including a single crystal furnace guide shell according to any one of the first aspect.
It will be appreciated that the advantages of the second aspect may be found in the relevant description of the first aspect, and will not be described in detail herein.
According to the single crystal furnace guide cylinder and the single crystal furnace, the upper half part of the inner guide cylinder is arranged to be the conical cylinder part with the inverted conical structure, the lower half part is arranged to be the straight cylinder part, the temperature gradient difference between the center and the edge of a single crystal can be effectively reduced in the radial direction, the uniformity of the radial V/G of a solid-liquid growth interface is improved, the heat dissipation of the upper half part of the single crystal can be effectively increased by the conical cylinder part, the aggregation growth of COP defects is reduced, and therefore the size and the number of COP defects in the single crystal grown by direct pulling are reduced, and the single crystal can be applied to more integrated circuit devices.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required for the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic structural view of a single crystal furnace draft tube according to an embodiment of the present disclosure;
fig. 2 is a schematic view of the height of a straight barrel component provided in an embodiment of the present application.
Reference numerals:
10: an outer guide shell; 20: an inner guide shell; 21: a cone member; 22: a straight cylinder part.
Detailed Description
The present application will be more clearly described with reference to the following specific examples. The following examples will assist those skilled in the art in further understanding the function of the present application, but are not intended to limit the present application in any way. It should be noted that variations and modifications could be made by those skilled in the art without departing from the spirit of the present application. These are all within the scope of the present application.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
In the description of this application and the claims that follow, the terms "first," "second," "third," etc. are used merely to distinguish between descriptions and should not be construed to indicate or imply relative importance.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
Furthermore, references to "a plurality of" in the examples of this application should be interpreted as two or more.
Czochralski crystals can produce vacancy defects during growth that can gradually accumulate during crystal growth to form COP defects. The size of COP defects determines the linewidth limit of devices for integrated circuits, affecting device performance and yield. Therefore, reducing the number and size of COP defects is a critical requirement for single crystals. During the growth of single crystals, the ratio of the pulling rate at the solid-liquid growth interface to the temperature gradient affects the COP defects in the single crystals. Meanwhile, the COP defect in the single crystal is influenced by the cooling speed of the single crystal. Taking silicon single crystal growth as an example, COP defects are generated by aggregation growth of silicon vacancy intrinsic defects generated at a solid-liquid growth interface in a temperature range of 1000-1050 ℃ during single crystal growth. The larger the concentration of silicon vacancy defects, the slower the single crystal is cooled in the temperature range of 1000-1050 ℃, the larger the number of COP defects, and the larger the size of COP defects. In the process of pulling up single crystals, the guide cylinder is mainly used for controlling the thermal field. However, in the related art, when the conventional guide cylinder is used for controlling the thermal field, the radial temperature gradient difference of the single crystal is large, so that the V/G variation of the single crystal in the radial direction is large, the cooling speed of the single crystal is low, and finally, a large number of COP defects exist in the single crystal grown by Czochralski, so that the application range of the single crystal is limited.
Based on the above problems, the inventors have found that the upper half part of the inner guide cylinder can be set to an inverted cone structure, the lower half part can be set to a straight cylinder structure, the straight cylinder structure can reduce the temperature gradient difference between the center and the edge of the single crystal in the radial direction, the uniformity of the radial V/G of the solid-liquid growth interface can be improved, and the inverted cone structure can increase the heat dissipation of the upper half part of the single crystal.
Fig. 1 is a schematic structural diagram of a single crystal furnace guide shell according to an embodiment of the present disclosure. As shown in fig. 1, a single crystal furnace guide shell in an embodiment of the present application includes: an outer guide cylinder 10 and an inner guide cylinder 20 disposed inside the outer guide cylinder 10.
The inner guide shell 20 comprises a conical shell part 21 and a straight shell part 22.
The cone part 21 is close to the furnace mouth of the single crystal furnace, and the straight part 22 is close to the furnace bottom of the single crystal furnace.
The cone member 21 has an inverted cone structure, and the lower opening of the cone member 21 is connected to the upper opening of the straight member 22.
Alternatively, the outer guide casing 10 and the inner guide casing 20 are coaxially arranged.
Illustratively, in this embodiment, the cone member 21 is an upper half of the inner guide shell 20 near the furnace mouth of the single crystal furnace. The cone member 21 is provided in an inverted cone structure, that is, the diameter of the upper opening of the cone member 21 is larger than the diameter of the lower opening of the cone member 21, and the cone generatrix of the cone member 21 is inclined at a large angle, thereby increasing radiation heat dissipation and enabling the upper half of the single crystal to be rapidly cooled. The straight cylinder part 22 is close to the bottom of the single crystal furnace and is the lower half part of the inner guide cylinder 20. The inner side of the straight tube member 22 is disposed parallel to the vertical direction along the growth direction of the single crystal, reducing radiation heat dissipation. That is, the difference in temperature gradient between the center and the edge of the single crystal in the radial direction is reduced.
In the case of growing a single crystal by Czochralski method, two kinds of intrinsic defects, namely, vacancies and interstitials, are formed near the solid-liquid growth interface, and the two kinds of intrinsic defects undergo a recombination reaction. The flux of the two intrinsic defects into the single crystal determines the concentration of the vacancy intrinsic defects in the single crystal, which in turn is determined by the competition between convection and diffusion. The V/G in the radial direction of the single crystal in turn affects the competition between convection and diffusion. At the same time, the growth of COP defects is related to the heat dissipation rate of the single crystal in a preset temperature range, and the upper half of the single crystal is in the preset temperature range, for example, the preset temperature range of the silicon single crystal is 1000 ℃ to 1050 ℃ and the upper half of the silicon single crystal is in the temperature range of 1000 ℃ to 1050 ℃ as known from the foregoing. Therefore, the V/G in the radial direction of the single crystal and the heat dissipation rate of the single crystal in a preset temperature range affect COP defects in the single crystal.
In this embodiment, the inverted cone structure of the cone member can effectively increase the heat dissipation rate of the single crystal in the preset temperature range, that is, effectively increase the heat dissipation of the upper half portion of the single crystal, and reduce the aggregation growth of COP defects. Meanwhile, the straight barrel part can effectively ensure that the temperature gradient difference between the center and the edge of the single crystal in the radial direction is reduced near the solid-liquid growth interface of the single crystal. Therefore, on the basis of small difference of pulling speed between the center and the edge of the single crystal, the difference of temperature gradient between the center and the edge of the single crystal in the radial direction is reduced, and the uniformity of radial V/G of a solid-state growth interface is improved. Thereby reducing the size and number of COP defects in the as-grown single crystal.
Alternatively, in the present embodiment, in order to further secure the effect of the conical cylinder part 21 of increasing radiation heat dissipation and the effect of the straight cylinder part 22 of decreasing radiation heat dissipation, the thermal conductivity of the conical cylinder part 21 is set to be larger than that of the straight cylinder part 22.
Alternatively, referring to FIG. 2, the height of the straight barrel member 22 is the difference between the slip line length and the liquid port distance. Wherein the length of the slip line is the length of the slip line in which dislocation is generated in the single crystal when pulling. The liquid port distance is the distance from the lower edge of the single crystal furnace guide cylinder to the liquid level in the crucible, and the crucible is positioned below the single crystal furnace guide cylinder. Here, the liquid port distance may be a distance from the lower port of the straight tube member 22 of the inner guide tube 20 to the liquid surface in the crucible. As shown in fig. 2, H represents the height of the straight tube member 22, L represents the slip line length, and Gap represents the Gap. The length of the slip line is related to the temperature at which the single crystal is grown, and for example, in the case of a silicon single crystal, the temperature at which the silicon single crystal is grown is different in the direction of growth of the silicon single crystal. Since the position of the slip line cut-off is close to the position of the silicon single crystal at 1000 ℃ to 1050 ℃, the length of the slip line is cut-off when the temperature of the single crystal is lower than 1100 ℃, i.e. the length of the slip line is the length between the liquid level in the crucible and the position of the single crystal at 1100 ℃.
Optionally, the included angle between the tapered bus of the tapered cylinder part 21 and the vertical direction is within a preset angle range, and the preset angle range is greater than 25 degrees and less than 35 degrees, so as to ensure that the tapered bus of the tapered cylinder part 21 is inclined at a large angle, and increase radiation and heat dissipation.
Alternatively, the diameter of the lower opening of the cone member 21 is equal to the diameter of the straight tube member 22, and the cone member 21 and the straight tube member 22 are of unitary construction. To ensure that the cone member 21 and the straight member 22 are firmly connected together.
Optionally, the inner wall of the cone member 21 is provided with a first inner liner (not shown) and the outer wall of the straight tube member 22 is provided with a second inner liner (not shown). The first lining layer and the second lining layer can be quartz lining layers, and in the using process of the single crystal furnace guide cylinder, the quartz lining layers can reduce metal impurities and the like from entering the solution in the crucible, so that the quality of single crystals is improved. Wherein, the crucible is positioned below the guide cylinder of the single crystal furnace.
Optionally, a cavity is arranged between the outer guide cylinder 10 and the inner guide cylinder 20, and the cavity is filled with heat insulation materials. So as to improve the heat preservation effect of the guide cylinder of the single crystal furnace. Wherein, the heat insulation material can be carbon felt and/or solidified felt.
According to the single crystal furnace guide cylinder provided by the embodiment of the application, the upper half part of the inner guide cylinder is arranged to be the conical cylinder part with the inverted conical structure, the lower half part is arranged to be the straight cylinder part, the temperature gradient difference between the center and the edge of a single crystal can be effectively reduced in the radial direction, the uniformity of the radial V/G of a solid-liquid growth interface is improved, meanwhile, the heat dissipation of the upper half part of the single crystal is effectively increased, the aggregation growth of COP defects is reduced, and therefore the size and the number of COP defects in the single crystal grown by direct pulling are reduced, and the single crystal can be applied to more integrated circuit devices.
In the practical use process of the single crystal furnace guide cylinder provided by the embodiment of the application, for better playing the temperature gradient difference between the center and the edge of the single crystal in the radial direction of the single crystal furnace guide cylinder, the heat dissipation effect of the upper half part of the single crystal is increased, and parameters of the Czochralski single crystal growth process can be set in a matching manner.
The crystal pulling parameters are set as follows:
the liquid port distance is 65mm.
And (3) seeding: the crystal is turned into 10, the average pulling speed of seeding is 3.5mm/min, and the seeding length is 300mm and then enters the shouldering stage.
Shoulder placing stage: the average pulling speed of the shoulder is gradually changed from 0.4mm/min to 0.6mm/min, the crystal transition is gradually changed from 10 to 16, and the length of the shoulder is 130mm to 150mm.
And (3) an isodiametric stage: the average pulling speed of the equal diameter is 0.6mm/min, and the crystal transition is gradually changed from 16 to 18.
And (3) ending stage: the average pull speed of the ending is limited to 0.4mm/min to 0.8mm/min, and the cooling stage is carried out after the ending length is 230 mm.
And (3) a cooling stage: after rising by 70mm at a pull rate of 0.8mm/min, rising to the auxiliary chamber at a pull rate of 8mm/min, and waiting for cooling.
In this embodiment, a larger liquid gap (65 mm gap) is used during the pulling process than in the conventional process, and the increase in the liquid gap reduces the temperature gradient at the edge and center of the single crystal at the same time, and the temperature gradient at the edge of the single crystal is reduced more than the temperature gradient at the center of the single crystal, so that the larger liquid gap in this embodiment also improves the radial V/G uniformity.
For example, when preparing 8 inch silicon single crystal, through detection and verification, the single crystal furnace guide cylinder provided by the embodiment is adopted for preparation, the number of COP defects with the size larger than 0.12 μm in the silicon single crystal is zero, and the quality of the single crystal is improved.
Here, the single crystal prepared by using the single crystal furnace guide cylinder provided by the embodiment is directly a single crystal with low COP defect, and an annealing process is not needed. In addition, the monocrystal prepared by the monocrystal furnace guide cylinder provided by the embodiment has no other doping substances except the resistance doping agent and no limit of the application range.
The embodiment of the application also provides a single crystal furnace, which comprises a single crystal furnace guide cylinder. The single crystal furnace guide cylinder can be provided in any embodiment of the application.
The specific implementation process and principle of the single crystal furnace guide cylinder in this embodiment can be referred to the foregoing embodiments, and will not be described herein.
According to the single crystal furnace provided by the embodiment, the upper half part of the inner guide cylinder is arranged to be the conical cylinder part with the inverted conical structure, and the lower half part is arranged to be the straight cylinder part, so that the temperature gradient difference between the center and the edge of a single crystal in the radial direction can be effectively reduced, the uniformity of the radial V/G of a solid-liquid growth interface is improved, meanwhile, the heat dissipation of the upper half part of the single crystal is increased, and the size and the number of COP defects in the single crystal grown by Czochralski pulling are further reduced.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (10)
1. A single crystal furnace draft tube, comprising: an outer guide cylinder and an inner guide cylinder arranged inside the outer guide cylinder;
the inner guide cylinder comprises a conical cylinder part and a straight cylinder part;
the cone part is close to a furnace mouth of the single crystal furnace, and the straight cylinder part is close to the furnace bottom of the single crystal furnace;
the cone part is of an inverted cone structure, and the lower opening of the cone part is connected with the upper opening of the straight cylinder part.
2. The single crystal furnace draft tube according to claim 1, wherein the height of said straight tube member is the difference between the slip line length and the liquid port distance; the length of the slip line is the length of the slip line which generates dislocation during crystal pulling; the liquid port distance is the distance from the lower edge of the single crystal furnace guide cylinder to the liquid level in the crucible, and the crucible is positioned below the single crystal furnace guide cylinder.
3. The single crystal furnace draft tube according to claim 1, wherein the coefficient of thermal conductivity of said cone member is greater than the coefficient of thermal conductivity of said straight tube member.
4. The single crystal furnace draft tube according to claim 1, wherein the included angle between the tapered generatrix of the cone member and the vertical is within a predetermined angular range, the predetermined angular range being greater than 25 degrees and less than 35 degrees.
5. The single crystal furnace draft tube according to claim 1, wherein said cone member and said straight tube member are of unitary construction.
6. The single crystal furnace draft tube according to claim 1, wherein the inner wall of the cone member is provided with a first liner layer and the outer wall of the straight member is provided with a second liner layer.
7. The single crystal furnace draft tube according to claim 1, wherein a cavity is provided between said outer draft tube and said inner draft tube, said cavity being filled with a thermal insulation material.
8. The single crystal furnace draft tube according to claim 7, wherein said insulating material is carbon felt and/or solidified felt.
9. The single crystal furnace draft tube according to any one of claims 1 to 8, wherein said outer draft tube and said inner draft tube are coaxially disposed.
10. A single crystal furnace comprising the single crystal furnace guide shell of any one of claims 1 to 9.
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| CN202310685822.7A CN116516477B (en) | 2023-06-09 | 2023-06-09 | Single crystal furnace guide cylinder and single crystal furnace |
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| CN202310685822.7A CN116516477B (en) | 2023-06-09 | 2023-06-09 | Single crystal furnace guide cylinder and single crystal furnace |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN215828917U (en) * | 2021-08-13 | 2022-02-15 | 上海新昇半导体科技有限公司 | Single crystal furnace guide cylinder and single crystal furnace |
| WO2022073524A1 (en) * | 2020-10-10 | 2022-04-14 | 徐州鑫晶半导体科技有限公司 | Crystal growth device and method |
| CN114561692A (en) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | Method for improving temperature gradient of solid-liquid interface in growth of large-diameter monocrystalline silicon |
| CN218491883U (en) * | 2022-07-29 | 2023-02-17 | 内蒙古中环晶体材料有限公司 | Promote water-cooling structure of single crystal pulling speed |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022073524A1 (en) * | 2020-10-10 | 2022-04-14 | 徐州鑫晶半导体科技有限公司 | Crystal growth device and method |
| CN215828917U (en) * | 2021-08-13 | 2022-02-15 | 上海新昇半导体科技有限公司 | Single crystal furnace guide cylinder and single crystal furnace |
| CN114561692A (en) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | Method for improving temperature gradient of solid-liquid interface in growth of large-diameter monocrystalline silicon |
| CN218491883U (en) * | 2022-07-29 | 2023-02-17 | 内蒙古中环晶体材料有限公司 | Promote water-cooling structure of single crystal pulling speed |
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