CN116397216A - Device for back sealing silicon wafer - Google Patents
Device for back sealing silicon wafer Download PDFInfo
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- CN116397216A CN116397216A CN202310340643.XA CN202310340643A CN116397216A CN 116397216 A CN116397216 A CN 116397216A CN 202310340643 A CN202310340643 A CN 202310340643A CN 116397216 A CN116397216 A CN 116397216A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 133
- 239000010703 silicon Substances 0.000 title claims abstract description 133
- 238000007789 sealing Methods 0.000 title claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 78
- 239000012495 reaction gas Substances 0.000 claims description 42
- 239000000376 reactant Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000000284 resting effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 142
- 238000000034 method Methods 0.000 description 8
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
An embodiment of the present invention discloses an apparatus for back-sealing a silicon wafer, the apparatus including a reactive gas supply unit for supplying a reactive gas to the silicon wafer to grow a back-sealing film on the silicon wafer, the reactive gas supply unit being configured such that a first flow rate of the reactive gas supplied to a central region of the silicon wafer is greater than a second flow rate of the reactive gas supplied to an edge region of the silicon wafer. The problem of uneven thickness of the back sealing film caused by low heating temperature of the center of the silicon wafer can be avoided.
Description
Technical Field
The invention relates to the field of semiconductor silicon wafer production, in particular to a device for back sealing a silicon wafer.
Background
Epitaxial silicon wafer is used in most of the production processes of large-scale integrated circuits. Epitaxial wafers can be obtained by epitaxial growth of the wafer, but autodoping is inevitably present in the process, especially for heavily doped wafers. One possible reason for the autodoping phenomenon is: in a high temperature environment of epitaxial growth of a silicon wafer, dopant atoms such as boron or phosphorus contained in the silicon wafer diffuse out and pass through the back surface of the silicon wafer into a reaction gas for epitaxial growth and deposit into the epitaxial layer of the silicon wafer. The deposition of the dopant atoms in the epitaxial layer of the wafer can lead to resistivity drift, which can seriously affect the quality of the epitaxial wafer.
The back sealing technology of the silicon wafer is a common means for preventing the self-doping phenomenon, and is to deposit a layer of back sealing film such as a high-purity silicon dioxide film on the back surface of the silicon wafer so as to prevent the dopant atoms from penetrating through the back surface of the silicon wafer and entering reaction gas to play a role in sealing the dopant atoms, thereby effectively inhibiting the self-doping, reducing the influence on the resistivity and improving the quality of the epitaxial silicon wafer.
For cost and film quality, the back-sealing film is usually deposited on the back surface of the silicon wafer to be epitaxially grown by using an atmospheric pressure chemical vapor deposition (Atmospheric Pressure Chemical Vapor Deposition, APCVD) method. Existing continuous APCVD systems generally include a silicon wafer transfer module, a heating module, a deposition module, and the like, through which the silicon wafer is carried by the transfer module to deposit a backside seal film on the backside of the silicon wafer under the high temperature provided by the heating module. The early APCVD system conveying module adopts an alloy conveying belt, and a silicon wafer bearing tray made of non-metal materials is selected more in consideration of metal pollution.
In the heating process of the silicon wafer, in order to prevent the collapse problem caused by overheating of the center of the silicon wafer, the heating area is divided into different areas, so that the temperature of the center area of the silicon wafer is lower than that of other areas, and the collapse problem is effectively prevented. However, the thickness of the deposited film in the central region of the silicon wafer is low due to uneven heating of the silicon wafer, resulting in poor uniformity of the deposited film.
Disclosure of Invention
In order to solve the above-mentioned technical problems, it is desirable to provide a device for back-sealing a silicon wafer, which can avoid the problem of uneven thickness of the back-sealing film even if the center of the silicon wafer is heated to a lower temperature in order to avoid the problem of collapse.
The technical scheme of the invention is realized as follows:
an apparatus for back-sealing a silicon wafer may include a reaction gas supply unit for supplying a reaction gas to the silicon wafer to grow a back-sealing film on the silicon wafer, the reaction gas supply unit being configured such that a first flow rate of the reaction gas supplied to a central region of the silicon wafer is greater than a second flow rate of the reaction gas supplied to an edge region of the silicon wafer.
In the apparatus according to the embodiment of the invention, the first flow rate of the reaction gas supplied to the central region of the silicon wafer is large and the second flow rate of the reaction gas supplied to the edge region of the silicon wafer is small, and therefore, even if the temperature of the central region of the silicon wafer is heated to be low and the temperature of the edge region of the silicon wafer is heated to be high in order to avoid collapse of the silicon wafer, the growth rate of the back-sealing film in the central region is lower than that in the edge region, but since more reaction gas can participate in the growth process of the back-sealing film in the central region and less reaction gas can participate in the growth process of the back-sealing film in the edge region, the growth rate of the back-sealing film in the central region is high and the growth rate in the edge region is low, the difference in growth rate due to the temperature difference is offset, and thus the thickness of the grown back-sealing film is uniform over the entire back surface of the silicon wafer.
Preferably, the reaction gas supply unit may include a first cylinder and a second cylinder surrounding the first cylinder, the reaction gas being supplied to a central region of the silicon wafer via a first passage defined by the first cylinder and to an edge region of the silicon wafer via a second passage formed between the first cylinder and the second cylinder.
Preferably, the apparatus may further comprise a third cylinder surrounding the second cylinder, a third passage being formed between the second cylinder and the third cylinder, and a protective gas being supplied toward the silicon wafer via the third passage.
Preferably, the apparatus may further include a fourth cylinder surrounding the third cylinder, a fourth passage being formed between the fourth cylinder and the third cylinder, the supplied reaction gas and the protective gas being pumped away from the silicon wafer through the fourth passage.
Preferably, the reactant gas supply unit may further include a first flow regulator for regulating a flow rate of the reactant gas flowing through the first channel, and a second flow regulator for regulating a flow rate of the reactant gas flowing through the second channel.
Preferably, the apparatus may further include a conveyor belt for conveying the silicon wafer, the conveyor belt being configured to convey the silicon wafer away from the relative position after a growth time of the back-sealing film required to convey the silicon wafer to the relative position opposite to the reaction gas supply unit and to maintain the silicon wafer at the relative position.
Preferably, a distance between the outlet of the reaction gas supply unit and the silicon wafer at the opposite position may be less than 10cm, and the outlet of the reaction gas supply unit is configured such that the reaction gas can be directly supplied to the entire surface of the silicon wafer where the back sealing film is grown.
Preferably, the apparatus may further comprise a plurality of trays which rest on the conveyor belt in such a manner as to be aligned along a conveying direction of the conveyor belt to be conveyed by the conveyor belt, each tray for carrying a single silicon wafer.
Preferably, the reaction gas may include a volume ratio of between 1:10 to 1: between 5 silicon tetrahydroide and oxygen.
Preferably, the apparatus may further comprise a heating unit for heating the silicon wafer.
Drawings
FIG. 1 is a schematic view of a reaction gas supply unit of an apparatus for back-sealing a silicon wafer according to an embodiment of the present invention;
fig. 2 is a cross-sectional structural view of a reaction gas supply unit of an apparatus for back-sealing a silicon wafer according to an embodiment of the present invention;
fig. 3 is a cross-sectional structural view of a reaction gas supply unit and a third cylinder of an apparatus for back-sealing a silicon wafer according to an embodiment of the present invention;
fig. 4 is a cross-sectional structural view of a reaction gas supply unit, a third cylinder, and a fourth cylinder of an apparatus for back-sealing a silicon wafer according to an embodiment of the present invention;
fig. 5 is a cross-sectional structural view of a reactive gas supply unit, a first flow regulator, and a second flow regulator of an apparatus for back-sealing a silicon wafer according to an embodiment of the present invention;
FIG. 6 is a schematic structural view of an apparatus for back-sealing a silicon wafer according to an embodiment of the present invention;
FIG. 7 shows the thickness measurement locations selected to obtain a distribution of the thickness of the back-sealing film in the silicon wafer;
FIG. 8 is a graph showing the thickness distribution of a back-sealed film of a back-sealed silicon wafer obtained by processing in a conventional silicon wafer back-sealing device;
FIG. 9 shows a graph of the thickness profile of a back-sealed film of a back-sealed silicon wafer processed by the apparatus according to the present invention;
fig. 10 shows a graph of the thickness profile of a back-sealing film of another back-sealing silicon wafer processed by the apparatus according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, an embodiment of the present invention provides an apparatus 1 for back-sealing a silicon wafer W, the apparatus 1 may include a reactive gas supply unit 10 for supplying a reactive gas RG to the silicon wafer W to grow a back-sealing film F on the silicon wafer W, as shown in fig. 1, the reactive gas supply unit 10 may be located above the silicon wafer W and supply the reactive gas RG downward to grow the back-sealing film F on an upper surface of the silicon wafer W, the reactive gas supply unit 10 is configured such that a first flow velocity V1 of the reactive gas RG supplied to a central region CA of the silicon wafer W is larger than a second flow velocity V2 of the reactive gas RG supplied to an edge region EA of the silicon wafer W, particularly in fig. 1, a central region CA is schematically shown by a circular light region in the upper surface of the silicon wafer W, and an edge region EA is schematically shown by a circular dark region in the upper surface of the silicon wafer W, in addition, a reactive gas supplied to the central region CA is schematically shown by an arrow, the reactive gas supplied to the central region RG is schematically shown by the solid line, a first flow velocity V1 of the reactive gas supplied to the central region is shown by the solid line, and a second flow velocity V2 is shown by the solid line is additionally shown by the solid arrow, and the flow velocity is schematically shown by the solid arrow between the second flow velocity V1 and the solid line is shown by the solid line and the second flow velocity is shown by the solid arrow in the solid line.
In the apparatus 1 according to the embodiment of the present invention, the first flow rate of the reactive gas RG supplied to the center region CA of the wafer W is large, and the second flow rate of the reactive gas RG supplied to the edge region EA of the wafer W is small, so that even if the temperature of the center region CA of the wafer W is heated to be low in view of avoiding collapse of the wafer W and the temperature of the edge region EA of the wafer W is heated to be high, the growth rate of the back film F in the center region CA is lower than that in the edge region EA, but since more reactive gas RG can participate in the growth process of the back film F for the center region CA and less reactive gas RG can participate in the growth process of the back film F for the edge region EA, the growth rate of the back film F in the center region CA is high, the growth rate of the back film F in the edge region EA is low, counteracting the difference in growth rate due to the temperature difference, thereby making the thickness of the grown back film F uniform over the entire back surface of the wafer W.
It should be noted that, referring to fig. 1, it is known that the reactive gas RG supplied to the central region CA of the wafer W may flow to the edge region EA of the wafer W, that is, it appears that the reactive gas RG supplied to the central region CA of the wafer W also participates in the growth of the back-sealing film at the edge region EA of the wafer W, but this is not the case in reality, because the reactive gas RG supplied to the central region CA of the wafer W always flows to the central region CA first and then to the edge region EA, and the effective film forming components such as silicon tetrahydride and oxygen in the reactive gas RG are already consumed at the central region CA.
For the above-described reactive gas supply unit 10, in order to enable the reactive gases RG of different flow rates to be supplied to the central region CA and the edge region EA of the silicon wafer W in a more precise manner, in a preferred embodiment of the present invention, referring to fig. 2, the reactive gas supply unit 10 may include a first cylinder 11 and a second cylinder 12 surrounding the first cylinder 11, the reactive gases RG being supplied to the central region CA of the silicon wafer W via a first passage P1 defined by the first cylinder 11 and to the edge region EA of the silicon wafer W via a second passage P2 formed between the first cylinder 11 and the second cylinder 12. In this way, the first channel P1 and the second channel P2 corresponding to the central region CA and the edge region EA of the wafer W are obtained such that the reaction gases RG flowing through the first channel P1 and the second channel P2 do not interfere with each other, and therefore, the speeds at which the reaction gases RG flow through the first channel P1 and the second channel P2 may be different.
In a preferred embodiment of the present invention, referring to fig. 3, the apparatus 1 may further include a third cylinder 20 surrounding the second cylinder 12, a third passage P3 being formed between the second cylinder 12 and the third cylinder 20, as a protective gas PG schematically shown by a solid arrow in fig. 3 being supplied toward the silicon wafer W via the third passage P3. As can be readily understood by referring to fig. 3, the protective gas PG flowing through the channel P3 forms a cylindrical "gas curtain" at the outlet of the channel P3, thereby protecting the supplied reactive gas RG inside and providing a stable flowing environment of the reactive gas RG, avoiding disturbance of the supplied reactive gas RG by, for example, an external gas flow.
The protective gas PG here may be, for example, nitrogen, and in addition, the flow rate of the inert gas PG may be greater than the total flow rate of the reaction gas RG, whereby more stable protection of the reaction gas RG can be provided.
In a preferred embodiment of the present invention, referring to fig. 4, the apparatus 1 may further include a fourth cylinder 30 surrounding the third cylinder 20, a fourth passage P4 being formed between the fourth cylinder 30 and the third cylinder 20, and the supplied reaction gas RG and the protective gas PG being pumped away from the wafer W via the fourth passage P4. In this way, the reaction gas RG can be prevented from polluting the environment.
Here, the suction flow rate that can be generated by, for example, a negative pressure provided by a vacuum pump not shown in the drawings may be greater than the total flow rates of the reaction gas RG and the protective gas PG.
Referring back to fig. 2, for realizing that the first flow velocity V1 of the reaction gas RG flowing in the first passage P1 is larger than the first flow velocity V2 of the reaction gas RG flowing in the second passage P2, for example, the reaction gas RG may be supplied by two separate gas storages, which are not shown in the drawing, but the pressures of the reaction gas RG stored in the two separate gas storages are different. However, in a preferred embodiment of the present invention, referring to fig. 5, the reactant gas supply unit 10 may further include a first flow regulator 13 for regulating the flow rate of the reactant gas RG flowing through the first passage P1 and a second flow regulator 14 for regulating the flow rate of the reactant gas RG flowing through the second passage P2. Thus, for example, the reactive gas RG can be supplied by means of a single gas reservoir, not shown in the drawings, while the difference in flow rate is achieved by the first flow rate regulator 13 and the second flow rate regulator 14 described above.
In order to ensure the uniformity of the thickness of the back-sealing film F, for example, if the thickness of the back-sealing film F grown in the central area CA of the wafer W is measured after the back-sealing process is completed, the first flow regulator 13 may be operated to appropriately increase the flow rate and/or the second flow regulator 14 may be operated to appropriately decrease the flow rate, and if the thickness of the back-sealing film F grown in the central area CA of the wafer W is measured after the back-sealing process is completed, the first flow regulator 13 may be operated to appropriately decrease the flow rate and/or the second flow regulator 14 may be operated to appropriately increase the flow rate. In addition, for measurement of the thickness of the back-sealing film F, for example, a plurality of points, for example, 5 points, which are uniformly distributed in two diametrical directions perpendicular to each other of the silicon wafer W may be respectively selected, and the thickness of the back-sealing film F at each point is measured, thereby obtaining a variation in the thickness of the back-sealing film F in the radial direction of the silicon wafer W.
In a preferred embodiment of the present invention, referring to fig. 6, the apparatus 1 may further include a conveyor belt 40 for conveying the silicon wafer W, the conveyor belt 40 being configured to convey the silicon wafer W from a position such as shown by a left-hand broken line in fig. 6 to a relative position opposite to the reaction gas supply unit 10, as shown by a solid line in fig. 6, and to convey the silicon wafer W away from the relative position, as shown by a right-hand broken line in fig. 6, after a growth time of the back-seal film F required for holding the silicon wafer W at the relative position.
In particular, as shown in fig. 6, the device 1 may also comprise two rollers spaced apart, on which the conveyor belt 40 is endless and wound to perform a run by rotation of said two rollers.
In a preferred embodiment of the present invention, still referring to fig. 6, the gap G between the outlet 10O of the reactive gas supply unit 10 and the wafer W at the opposite position may be smaller than 10cm, so that it is ensured that the reactive gas RG is supplied to the wafer W in a more stable and reliable manner, and the outlet 10O of the reactive gas supply unit 10 is configured such that the reactive gas RG can be directly supplied to the entire surface of the wafer W where the back film F grows, so that the growth of the back film F on the entire back surface can be directly related to the reactive gas RG of two flow rates, for example, in the case where the growth of the back film F is difficult to control due to the presence of a region where the growth of the back film F is not related to both flow rates, such as in the case shown in fig. 2, since the first cylinder 11 and the second cylinder 12 extend in the vertical direction at a position adjacent to the outlet 10O, the reactive gas leaving the outlet 10O can be directly supplied to the entire surface of the wafer W in a manner where the back film RG does not diffuse or converge toward the second cylinder 10, and the diameter of the second cylinder 12 is required to be supplied to the second cylinder 10 in the case where the diameter is required to be directly supplied to the outlet 10W at the outer side of the second cylinder 10, and the second cylinder 10 is shown in the case where the diameter is required to be supplied to the second cylinder 10.
In order for the above-described reactive gas supply unit 10 to supply the reactive gas RG directly to the entire upper surface of the silicon wafer W, which requires a relatively large aperture of the outlet 10O of the reactive gas supply unit 10 as described above, and which can facilitate connection with a reactive gas source not shown in the drawings, it is easily understood that this requires a relatively small aperture of the inlet of the reactive gas supply unit 10, and in the case where the above-described reactive gas supply unit 10 includes the first cylinder 11 and the second cylinder 12, referring to fig. 2, the second cylinder 12 may include a taper portion 12C which may taper from the inlet 10I of the reactive gas supply unit 10 toward the outlet 10O, thus enabling the inlet 10I of the reactive gas supply unit 10 to be relatively small, facilitating connection with the reactive gas source, and also enabling the reactive gas RG to be directly supplied to the entire upper surface of the silicon wafer W.
In a preferred embodiment of the present invention, still referring to fig. 6, the apparatus 1 may further include a plurality of trays 50 resting on the conveyor 40 in a manner aligned along the conveying direction T of the conveyor 40 to be conveyed by the conveyor 40, each tray 50 for carrying a single silicon wafer W. In this way, the production efficiency and productivity can be improved.
In a preferred embodiment of the present invention, the reaction gas RG may include a volume ratio of between 1:10 to 1: between 5 silicon tetrahydroide and oxygen.
In a preferred implementation of the invention, still referring to fig. 6, the apparatus 1 may further comprise a heating unit 60 for heating the wafer W. As shown in fig. 6, the heating unit 60 may heat the edge area EA of the wafer W mainly or to a higher temperature and the center area CA of the wafer W to a lower temperature to avoid the occurrence of the collapse problem.
The advantages of the apparatus 1 for back-sealing a silicon wafer W according to the present invention will be described in detail below in connection with the actual measured thickness of the back-sealing film F grown on the silicon wafer W.
For the measurement of the thickness of the back-sealing film grown on the silicon wafer W, this can be done in the manner as shown in fig. 7. Specifically, for example, 5 points uniformly distributed in two directions perpendicular to each other of the silicon wafer W on which the back-sealing film has been grown, that is, 9 points in total, may be selected, and the thickness of the back-sealing film at each point may be measured so as to know the distribution of the thickness of the back-sealing film grown on the entire back surface of the silicon wafer W.
The measurement results of the silicon wafer having the back-sealing film grown, which is obtained by the conventional silicon wafer back-sealing device, are shown in fig. 8, wherein the abscissa represents the values corresponding to the points at the different positions in fig. 7, that is, the abscissa represents the positions in the silicon wafer, and the ordinate represents the thickness of the back-sealing film in angstroms. As can be seen from fig. 8, the thickness of the back-sealing film is substantially the same, about 4000 angstroms, at points 1 to 4 and 6 to 9 shown in fig. 7, and these points correspond to the edge regions of the silicon wafer; at point 5 shown in fig. 7, the thickness of the back-sealing film is approximately 3800 angstroms, which corresponds to the central region of the silicon wafer. That is, for the silicon wafer having grown the back-sealing film obtained by the conventional silicon wafer back-sealing device treatment, the thickness of the back-sealing film is significantly reduced at the central region of the silicon wafer, resulting in non-uniformity of the back-sealing film thickness. As explained hereinabove, this is due to the fact that the central region of the wafer is heated to a relatively low temperature in order to avoid the problem of collapse.
The measurement results of the wafer W treated by the apparatus 1 for back-sealing a wafer W according to the present invention and having grown the back-sealing film F are shown in fig. 9, in which the meanings of the abscissa and the ordinate are identical to those of fig. 8, and in which the flow rate of the reactive gas identical to that of the conventional wafer back-sealing apparatus is supplied to the entire back surface of the wafer, but the flow rate of the reactive gas RG supplied to the central region CA of the wafer W is increased and/or the flow rate of the reactive gas RG supplied to the edge region EA of the wafer W is decreased on the basis of this. As can be seen from fig. 9, at points 1 to 9 shown in fig. 7, the thickness of the back seal film F is all substantially the same, about 4000 angstroms. That is, with respect to the silicon wafer W treated by the apparatus 1 for back-sealing a silicon wafer W according to the present invention, in which the back-sealing film F has grown, the thickness of the back-sealing film F is uniform over the entire back surface of the silicon wafer W, and the problem that the thickness of the back-sealing film F is significantly reduced at the central region CA of the silicon wafer W is avoided.
Referring next to fig. 10, which shows the thickness of the back-sealing film F on the silicon wafer W on which the back-sealing film F has grown, processed by the apparatus 1 for back-sealing a silicon wafer W according to the present invention, as in fig. 9, wherein the meaning of the abscissa and the ordinate corresponds to that in fig. 8, and wherein the flow rate of the reaction gas RG supplied to the central region CA of the silicon wafer W is further increased and/or the flow rate of the reaction gas RG supplied to the edge region EA of the silicon wafer W is further decreased on the basis of the corresponding processing situation of fig. 9. As can be seen from fig. 10, the thickness of the back sealing film F is substantially the same, about 4000 angstroms, at points 1 to 4 and 6 to 9 shown in fig. 7, and these points correspond to the edge area EA of the silicon wafer; at point 5 shown in fig. 7, the thickness of the back-sealing film F is about 4200 angstroms, and this point corresponds to the central region CA of the silicon wafer. That is, with the apparatus 1 for back-sealing a silicon wafer W according to the present invention, not only can a silicon wafer W grown with the back-sealing film F in which the thickness of the back-sealing film F is uniformly distributed over the entire back surface of the silicon wafer W be obtained, but also a silicon wafer W grown with the back-sealing film F in which the thickness of the back-sealing film F is significantly increased at the central region CA of the silicon wafer can be obtained according to specific requirements.
It should be noted that: the technical schemes described in the embodiments of the present invention may be arbitrarily combined without any collision.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. An apparatus for back-sealing a silicon wafer, characterized in that the apparatus comprises a reactive gas supply unit for supplying a reactive gas to the silicon wafer to grow a back-sealing film on the silicon wafer, the reactive gas supply unit being configured such that a first flow rate of the reactive gas supplied to a central region of the silicon wafer is greater than a second flow rate of the reactive gas supplied to an edge region of the silicon wafer.
2. The apparatus of claim 1, wherein the reaction gas supply unit comprises a first cylinder and a second cylinder surrounding the first cylinder, the reaction gas being supplied to a central region of the silicon wafer via a first channel defined by the first cylinder and to an edge region of the silicon wafer via a second channel formed between the first cylinder and the second cylinder.
3. The apparatus of claim 2 further comprising a third cylinder surrounding the second cylinder, a third channel being formed between the second cylinder and the third cylinder, a protective gas being supplied toward the silicon wafer via the third channel.
4. The apparatus of claim 3 further comprising a fourth cylinder surrounding said third cylinder, a fourth channel being formed between said fourth cylinder and said third cylinder, the supply of reactive gas and protective gas being pumped away from said wafer through said fourth channel.
5. The apparatus of claim 2, wherein the reactant gas supply unit further comprises a first flow rate adjuster for adjusting a flow rate of the reactant gas flowing through the first channel and a second flow rate adjuster for adjusting a flow rate of the reactant gas flowing through the second channel.
6. The apparatus according to any one of claims 1 to 5, further comprising a conveyor belt for conveying the silicon wafer, the conveyor belt being configured to convey the silicon wafer away from a relative position opposite to the reaction gas supply unit after a growth time of a back-sealing film required for the silicon wafer to be held at the relative position.
7. The apparatus of claim 6, wherein a distance between an outlet of the reaction gas supply unit and the silicon wafer at the opposite position is less than 10cm, and the outlet of the reaction gas supply unit is configured such that the reaction gas can be directly supplied to the entire surface of the silicon wafer where the back sealing film is grown.
8. The apparatus of claim 6 further comprising a plurality of trays resting on the conveyor belt in an arrangement along a conveying direction of the conveyor belt to be conveyed by the conveyor belt, each tray for carrying a single silicon wafer.
9. The apparatus of any one of claims 1 to 5, wherein the reactant gas comprises a volume ratio of between 1:10 to 1: between 5 silicon tetrahydroide and oxygen.
10. The apparatus according to any one of claims 1 to 5, further comprising a heating unit for heating the silicon wafer.
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| CN202310340643.XA CN116397216A (en) | 2023-03-31 | 2023-03-31 | Device for back sealing silicon wafer |
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| CN202310340643.XA CN116397216A (en) | 2023-03-31 | 2023-03-31 | Device for back sealing silicon wafer |
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| US4687682A (en) * | 1986-05-02 | 1987-08-18 | American Telephone And Telegraph Company, At&T Technologies, Inc. | Back sealing of silicon wafers |
| JPH1192940A (en) * | 1997-09-16 | 1999-04-06 | Hitachi Ltd | Device for forming material, such as semiconductor and superconducting material |
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