CN116348211A - Clamp for clamping and cleaning device - Google Patents
Clamp for clamping and cleaning device Download PDFInfo
- Publication number
- CN116348211A CN116348211A CN202180068340.6A CN202180068340A CN116348211A CN 116348211 A CN116348211 A CN 116348211A CN 202180068340 A CN202180068340 A CN 202180068340A CN 116348211 A CN116348211 A CN 116348211A
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- Prior art keywords
- base
- main surface
- average value
- clamping
- jig according
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- 238000004140 cleaning Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims abstract description 72
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 48
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims description 42
- 239000011148 porous material Substances 0.000 claims description 19
- 239000002243 precursor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 30
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 18
- 239000011737 fluorine Substances 0.000 description 18
- 229910052731 fluorine Inorganic materials 0.000 description 18
- 238000005259 measurement Methods 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 239000002253 acid Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 12
- 238000012546 transfer Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VMUWIFNDNXXSQA-UHFFFAOYSA-N hypofluorite Chemical compound F[O-] VMUWIFNDNXXSQA-UHFFFAOYSA-N 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 229910052580 B4C Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000002087 whitening effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000504 luminescence detection Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning In General (AREA)
Abstract
The clamping jig of the present invention comprises: a pillar section; a holding part which is positioned at one end part of the support column part and holds the outer periphery part of the substrate; and a base portion which is positioned at the other end portion of the pillar portion and supports the pillar portion. At least the base part contains a ceramic containing silicon carbide as a main component. The average value of the difference in section height (rδcl) between the section height at 25% of the load length rate in the roughness curve in the longitudinal direction of the base and the section height at 75% of the load length rate in the roughness curve is smaller in the upper main surface of the base than in the lower main surface of the base.
Description
Technical Field
The present invention relates to a clamp for clamping and a cleaning device.
Background
Conventionally, a cleaning apparatus for cleaning a semiconductor substrate with a cleaning liquid such as a predetermined chemical solution or pure water has been used to remove particles, organic contaminants, contaminants such as metal impurities, and polymers after etching treatment, which adhere to the semiconductor substrate.
As a liquid processing apparatus including such a cleaning apparatus, patent document 1 discloses a liquid processing apparatus including a holding mechanism for holding a substrate horizontally, the holding mechanism including a claw portion for holding an end surface of the substrate. As a holding mechanism for holding a substrate horizontally, patent document 2 discloses a clamp for pressing the substrate from above, and describes that the clamp is made of silicon carbide.
Prior art literature
Patent literature
Patent document 1: japanese patent No. 5726686
Patent document 2: japanese patent laid-open No. 4-130627
Disclosure of Invention
Means for solving the problems
The clamping jig of the present invention comprises: a pillar section; a holding part which is positioned at one end part of the support column part and holds the outer periphery part of the substrate; and a base portion which is positioned at the other end portion of the pillar portion and supports the pillar portion. At least the base part contains a ceramic containing silicon carbide as a main component. The average value of the difference in section height (rδcl) between the section height at 25% of the load length rate in the roughness curve in the longitudinal direction of the base and the section height at 75% of the load length rate in the roughness curve is smaller in the upper main surface of the base than in the lower main surface of the base.
Another clamping jig of the present invention includes: a pillar section; a holding part which is positioned at one end part of the support column part and holds the outer periphery part of the substrate; and a base portion which is positioned at the other end portion of the pillar portion and supports the pillar portion. At least the base part contains a ceramic containing silicon carbide as a main component. The average value of the difference in section height (rδcs) between the section height at 25% of the load length rate in the roughness curve in the short side direction of the base and the section height at 75% of the load length rate in the roughness curve is smaller on the upper main surface of the base than on the lower main surface of the base.
The manufacturing method of the clamp for clamping comprises the following steps: a step of filling particles containing silicon carbide as a main component into a molding die and molding the same to obtain a molded article; cutting the molded body to obtain a precursor; a step of firing the precursor to obtain a sintered body; and polishing and grinding at least the upper main surface of the sintered body.
The cleaning device of the present invention includes the clamp jig.
Drawings
Fig. 1 is a schematic view showing a schematic configuration of a cleaning device equipped with a clamp jig according to an embodiment of the present invention.
Fig. 2 is an enlarged view showing a clamping jig according to an embodiment of the present invention.
Detailed Description
In the case of using a clamp made of ceramics containing silicon carbide as a main component as a holding mechanism as in the liquid processing apparatus of patent document 1, if an object to be cleaned such as a semiconductor substrate is repeatedly cleaned for a long period of time using an acid containing fluorine such as hydrofluoric acid or hypofluorite, fluorine is fixed to carbon on the surface of the clamp and whitens. Therefore, a clamp for clamping is required that does not cause whitening on the surface even if the object to be cleaned is repeatedly cleaned for a long period of time by using an acid containing fluorine such as hydrofluoric acid or hypofluorite.
As described above, the clamping jig of the present invention has a smaller average value of the difference in section height (rδcl) between the section height at 25% of the load length rate in the roughness curve in the longitudinal direction of the base and the section height at 75% of the load length rate in the roughness curve, as compared with the lower main surface of the base. Alternatively, the average value of the difference in section height (rδcs) between the section height at 25% of the load length rate in the roughness curve in the short side direction of the base and the section height at 75% of the load length rate in the roughness curve is smaller on the upper main surface of the base than on the lower main surface of the base. As a result, according to the clamp of the present invention, even if the object to be cleaned is repeatedly cleaned for a long period of time using an acid containing fluorine such as hydrofluoric acid or hypofluorite, whitening phenomenon is less likely to occur on the upper main surface of the base portion that is easily exposed to the acid containing fluorine. Therefore, the clamp for clamping of the present invention reduces deterioration of the external appearance and can be used for a long period of time.
The clamping jig according to the present invention will be described in detail below with reference to fig. 1 and 2. Fig. 1 is a schematic diagram showing a schematic configuration of a cleaning device 30 equipped with a clamp jig 22 according to an embodiment of the present invention.
The cleaning apparatus 30 shown in fig. 1 includes a housing 1, and a chamber 2 for providing a space for cleaning various substrates W such as semiconductor wafers and substrates for Liquid Crystal Displays (LCDs) in the housing 1. In the case where the substrate W is a semiconductor wafer, the semiconductor wafer is composed of Si, siC, gaN, for example.
The housing 1 has a first window 3 for carrying the substrate W into the housing 1 or carrying the substrate W out of the housing 1. The first window 3 is opened and closed by a first shutter 4. The transfer arm 5 carries the substrate W, and carries the substrate W into the housing 1 through the first window 3 or carries the substrate W out of the housing 1. The first window 3 is closed by the first shutter 4 except for the time of carrying in and out the substrate W. The first shutter 4 is provided inside the housing 1, and opens and closes the first window 3 from inside the housing 1.
The chamber 2 has a second window 6 for carrying the substrate W into the chamber 2 or carrying the substrate W out of the chamber 2. The second window 6 is opened and closed by a second shutter 7. The transfer arm 5 enters the chamber 2 through the second window 6 or exits from the chamber 2, and transfers the substrate W to and from the spin chuck 8 provided in the chamber 2. The second shutter 7 is provided inside the chamber 2, and opens and closes the second window 6 from the inside of the chamber 2.
A gas supply unit 9 for supplying a dry gas such as nitrogen into the chamber 2 is provided in the ceiling of the chamber 2. The gas supply unit 9 supplies a dry gas downward to prevent filling of the chamber 2 by evaporation of a cleaning liquid (for example, an acid containing fluorine such as hydrofluoric acid or hypofluorite) supplied to the substrate W held by the spin chuck 8. When the dry gas is supplied downward, it is difficult to generate a watermark as a contaminant on the surface of the substrate W.
A processing cup 10 for accommodating a substrate W, a spin chuck 8 for holding the substrate W in the processing cup 10, a lower plate 11 positioned at a position separated from the rear surface of the substrate W, and an upper plate 16 positioned at a position separated from the front surface of the substrate W are provided in the chamber 2.
The treatment cup 10 includes an inclined portion at an upper portion and a drain tube 10a at a bottom portion. The processing cup 10 is vertically movable between a position above the substrate W held by the spin chuck 8 (a position indicated by a solid line in fig. 1, and a position below the substrate W held by the spin chuck 8 (a position indicated by a two-dot chain line in fig. 1, and a position below the substrate W held by the spin chuck 8, and a position below the substrate W).
The processing cup 10 is held at the retracted position so as not to interfere with the entry and exit of the transfer arm 5 when the substrate W is transferred between the transfer arm 5 and the spin chuck 8. On the other hand, in the case of cleaning the substrate W held by the spin chuck 8, the processing cup 10 is held at the processing position. The processing cup 10 held at the processing position prevents the cleaning liquid supplied to the substrate W from scattering to the surroundings, and guides the cleaning liquid used for cleaning the substrate W to the drain pipe 10a.
The drain pipe 10a is connected to a cleaning liquid recovery line and an exhaust pipe (both not shown). The drain pipe 10a discards mist generated in the treatment cup 10 or recovers the cleaning liquid in the chamber 2.
The spin chuck 8 includes a disk-shaped rotary plate 12 and a cylindrical body 13 connected to the rotary plate 12. A support (not shown) for supporting the substrate W and a clamping jig 22 for fixing the substrate W are attached to the outer periphery of the rotary plate 12. The supports are arranged at least at three positions at equal intervals along the circumferential direction and support the substrate W from the back surface side.
The clamping jigs 22 are disposed at least at three positions at equal intervals along the circumferential direction, and fix the substrate W from the outer peripheral surface side. A belt 14 is wound around the outer peripheral surface of the cylindrical body 13. The belt 14 is driven by the motor 15, so that the cylindrical body 13 and the rotary plate 12 can be rotated to rotate the substrate W fixed by the clamp jig 22.
The lower plate 11 is connected to a first shaft 24 inserted through the center of the rotary plate 12 and the inside of the cylindrical body 13. The first shaft 24 is fixed to a horizontal plate 25, and the horizontal plate 25 can be lifted and lowered together with the first shaft 24 by a first lifting mechanism 26 such as an air cylinder. The lower plate 11 and the first shaft 24 are provided with a first flow path 23 for supplying a cleaning liquid and a drying gas to the substrate W.
A disk-shaped upper plate 16 located near the ceiling of the chamber 2 is connected to the lower end of a cylindrical second shaft body 17. The upper plate 16 is rotatable by a motor 19 provided to the horizontal plate 18. The second shaft 17 is rotatably supported by the lower surface of the second horizontal plate 18. The second horizontal plate 18 can be lifted and lowered in the vertical direction by a second lifting mechanism 20 such as an air cylinder fixed to the ceiling of the chamber 2. A second flow path 21 for supplying a cleaning liquid and a drying gas is provided in each of the upper plate 16 and the second shaft body 17 in the axial direction.
When the substrate W is transferred between the spin chuck 8 and the transfer arm 5, the upper plate 16 is held at a position close to the ceiling of the chamber 2 so as not to collide with the transfer arm 5. When the surface (upper surface) of the substrate W is cleaned, the upper plate 16 is lowered to a position close to the surface of the substrate W held by the clamp jig 22. The cleaning liquid and the like are supplied toward the substrate W through the second flow path 21.
When the front and rear surfaces (upper and lower surfaces) of the substrate W are simultaneously cleaned, the rear surface of the substrate W is cleaned using the lower plate 11 and the first flow path 23 simultaneously with the cleaning of the front surface of the substrate W. As a method for cleaning the back surface of the substrate W, for example, the following method is given. First, the lower plate 11 is brought close to the back surface of the substrate W. Next, a cleaning liquid layer is formed by supplying a cleaning liquid from the first flow path 23 between the substrate W and the lower plate 11. The cleaning solution is treated by holding for a predetermined time. Next, pure water or the like is supplied from the first flow path 23 between the substrate W and the lower plate 11, and the chemical liquid is flowed out and subjected to a rinsing process. Next, the substrate W is rotated at a high speed while the dry gas is supplied from the first flow path 23 between the substrate W and the lower plate 11.
Examples of the cleaning liquid include acids containing fluorine such as hydrofluoric acid and hypofluorite.
After the substrate W is held by the clamp jig 22, the substrate W is cleaned. At this time, after the treatment cup 10 is lifted, the used chemical solution, pure water, and the like are discharged from the drain tube 10a.
After the cleaning of the substrate W is completed, the processing cup 10 and the lower plate 11 are lowered. The substrate W is transferred from the clamping jig 22 to the support with the upper plate 16 raised. Next, the first shutter 4 and the second shutter 7 are opened, and the arm 5 is moved into the chamber 2. In this state, the substrate W is transferred from the spin chuck 8 to the transfer arm 5 and carried out from the cleaning device 30 by a step opposite to the step of transferring the substrate W from the transfer arm 5 to the spin chuck 8 described earlier.
Next, a clamp 22 according to an embodiment of the present invention will be described. As shown in fig. 2, the clamping jig 22 includes a support column 22a, a holding portion 22b located at one end of the support column 22a for holding an outer peripheral portion of the substrate, and a base 22c located at the other end of the support column 22a for supporting the support column.
The pillar portion 22a is a member for connecting a grip portion and a base portion, which will be described later, and is formed of, for example, ceramic. Examples of the ceramic include, but are not limited to, ceramics containing silicon carbide as a main component, ceramics containing boron carbide as a main component, ceramics containing aluminum oxide as a main component, and the like.
In the present specification, the term "main component" means a component which is 80 mass% or more of the components constituting the ceramic, out of the total 100 mass% when the main component is silicon carbide or boron carbide. When the main component is alumina, it means that the component constituting the ceramic is 99.6 mass% or more of the total 100 mass%.
In the case where the pillar portion 22a is formed of a ceramic containing silicon carbide as a main component, metallic silicon, boron, free carbon, or the like may be contained as another component. When the metal silicon is included, the metal silicon may be either crystalline silicon or amorphous silicon. In the case where the pillar portion 22a is formed of a ceramic containing alumina as a main component, oxides of magnesium, silicon, and calcium may be contained as other components.
The components constituting the ceramic can be identified by an X-ray diffraction apparatus using cukα rays. The content of each component can be determined by a ICP (Inductively Coupled Plasma) luminescence spectrometer or a fluorescence X-ray analyzer, for example.
The grip 22b is a member for gripping the outer peripheral portion of the substrate W. The grip portion 22b is located at one end of the pillar portion 22 a. The grip portion 22b is formed of, for example, ceramic. Examples of the ceramic include, but are not limited to, ceramics containing silicon carbide as a main component, ceramics containing boron carbide as a main component, ceramics containing aluminum oxide as a main component, and the like.
When the grip portion 22b is formed of a ceramic containing silicon carbide as a main component, boron and free carbon may be contained as other components. In the case where the grip portion 22b is formed of a ceramic containing boron carbide as a main component, iron, aluminum, silicon, yttrium, or the like may be contained as another component. In the case where the grip portion 22b is formed of a ceramic containing alumina as a main component, oxides of magnesium, silicon, and calcium may be contained as other components.
Although not specifically shown in fig. 2, the grip portion 22b is shaped so as to easily grip the outer peripheral portion of the substrate W. Specifically, a slit, a groove, or the like is formed in the grip portion 22 b.
The base 22c is disposed at the other end of the pillar 22a, that is, disposed so as to face the grip 22 b. The base 22c is formed of ceramic containing silicon carbide as a main component. The ceramics forming the base 22c may contain, for example, metallic silicon, boron, free carbon, or the like, in addition to silicon carbide. When the metal silicon is included, the metal silicon may be either crystalline silicon or amorphous silicon.
In the base 22c formed of a ceramic containing silicon carbide as a main component, the upper main surface 22c' has a smaller average value of the difference in section height (rδcl) between the section height at 25% of the load length rate in the roughness curve of the base 22c in the longitudinal direction and the section height at 75% of the load length rate in the roughness curve, than the lower main surface 22c″. Therefore, even if the object to be cleaned such as the substrate W is repeatedly cleaned for a long period of time using an acid containing fluorine such as hydrofluoric acid or hypofluorite, whitening is less likely to occur on the upper main surface of the base 22c that is easily exposed to the acid containing fluorine. As a result, the clamp 22 of the present invention can be used for a long period of time while reducing deterioration in appearance.
Specifically, the upper main surface 22c 'side of the base 22c includes a member that prevents centrifugal force that removes the cleaning liquid (acid containing fluorine), such as a biasing member (not shown) such as a spring that is provided in the center of the support portion 22a and the upper main surface 22c' located in the outer peripheral portion. Further, as with the lower main surface 22c″, the cleaning liquid cannot be expected to be removed by natural falling due to gravity. As a result, even when the substrate W is cleaned while being placed on the rotary plate 12 and rotated, the cleaning liquid is likely to remain on the upper main surface 22 c'. Therefore, by defining the average value of the section height difference (rδcl) as described above, the contact angle of the cleaning liquid with respect to the upper main surface 22c' can be increased. Therefore, the water repellency of the upper main surface 22c' can be improved, and fixation of fluorine contained in the cleaning liquid can be suppressed.
In the base 22c, the difference is not limited as long as the average value of the difference in section height (rδcl) between the section height at 25% of the load length rate in the roughness curve in the longitudinal direction of the base 22c and the section height at 75% of the load length rate in the roughness curve is small in the upper main surface 22c' compared with the lower main surface 22c″. However, the difference between the average value of the sectional height differences (rδcl) of the upper main surface 22c' of the base 22c and the average value of the sectional height differences (rδcl) of the lower main surface 22c″ of the base 22c is preferably 0.16 μm or more.
In the lower main surface 22c″, the average value of the cross-sectional height difference (RScl) indicating the difference between the cross-sectional height at 25% of the load length rate in the roughness curve in the longitudinal direction of the base 22c and the cross-sectional height at 75% of the load length rate in the roughness curve is 0.35 μm or less. Here, the shape of the base 22c is rectangular in plan view, and the longer side direction of the upper main surface 22c' and the lower main surface 22c″ is the radial direction of the substrate W, and the shorter side direction described later is the circumferential direction of the substrate W.
If the average value of the cross-sectional height difference (rδcl) in the lower main surface 22c″ is 0.35 μm or less, particles that are separated from the lower main surface 22c″ are suppressed. Therefore, contamination in the cleaning device caused by the detached particles can be suppressed.
Alternatively, in the base 22c formed of a ceramic containing silicon carbide as a main component, the upper main surface 22c' may have a smaller average value of the difference in section height (rδcs) between the section height at 25% of the load length rate in the roughness curve of the base 22c and the section height at 75% of the load length rate in the roughness curve than the lower main surface 22c″. For the reasons described above, the water repellency of the upper main surface 22c' can be improved, and fixation of fluorine contained in the cleaning liquid can be suppressed.
In particular, the difference between the average value of the sectional height differences (rδcs) of the upper main surface 22c' of the base 22c and the average value of the sectional height differences (rδcs) of the lower main surface 22c″ of the base 22c is preferably 0.16 μm or more.
In the lower main surface 22c″, the average value of the cross-sectional height difference (rδcs) indicating the difference between the cross-sectional height at 25% of the load length rate in the roughness curve of the base 22c in the short side direction and the cross-sectional height at 75% of the load length rate in the roughness curve is preferably 0.35 μm or less. The reason is as described above, whereby contamination in the cleaning apparatus due to detached particles can be suppressed.
The upper main surface 22c' of the base 22c may be a mirror surface or a glossy surface. In this case, the ratio (Ra 1/Ra 2) of the average value of the arithmetic average roughness Ra1 in the long side direction of the base 22c to the average value of the arithmetic average roughness Ra2 in the short side direction of the base 22c is preferably 0.9 or more and 1.3 or less. If the ratio is such, the difference in the direction of the arithmetic average roughness Ra is small. As a result, fixation of fluorine contained in the cleaning liquid can be suppressed, and the cleaning liquid can be used for a long period of time. The specular or glossy surface may have a cutting mark along at least one of the short side direction and the long side direction of the base 22c. The cutting mark is particularly easily formed in the short side direction of the base 22c.
The cross-sectional height difference (rδcl), the cross-sectional height difference (rδcs), the arithmetic average roughness Ra1, and the arithmetic average roughness Ra2 can be determined according to JIS B0601: 2001, were measured using a laser microscope (manufactured by kenshi corporation, ultra-deep color 3D shape measurement microscope (VK-X1000 or its model). As measurement conditions, the illumination system is coaxial illumination, the measurement magnification is 480 times, the cutoff value λs is zero, the cutoff value λc is 0.08mm, the correction of the terminal effect is provided, the measurement range for each part is 710 μm×533 μm, and the measurement ranges are set from the total three parts of the right end, the center, and the left end in the short side direction of the base 22c.
Then, 4 lines to be measured may be drawn out at substantially equal intervals for each measurement range, and the surface roughness may be measured. The length of each line to be measured is, for example, 401 μm in the vertical direction of the measurement range when the longitudinal direction of the base 22c is the object, and 560 μm in the horizontal direction of the measurement range when the short direction of the base 22c is the object.
The average values of the cross-sectional height difference (rδcl), the cross-sectional height difference (rδcs), the arithmetic average roughness Ra1, and the arithmetic average roughness Ra2 are average values of measured values obtained from 12 wires in total, which are designed as the objects of measurement. The difference in cross-sectional height (rδcl) and the difference in cross-sectional height (rδcs) of the lower main surface may be obtained by the same method as described above.
The upper main surface 22c' of the base 22c may be connected to at least one side surface of the base 22c by a curved surface. When formed by a curved surface, the upper main surface 22c' is an inclined surface having a curvature toward the side surface. Therefore, the liquid falling property of the acid (cleaning liquid) containing fluorine is improved. Further, the possibility of threshing is reduced as compared with the case where the upper main surface 22c' and the side surface are orthogonal.
The curved surface may have a plurality of grooves along the short side direction of the base 22c. The curved surface has such grooves, and thus the acid (cleaning liquid) containing fluorine is dispersed in the grooves. As a result, the liquid falling property of the acid (cleaning liquid) containing fluorine is improved. The shape of the groove is not limited, and is preferably a U-shaped groove, for example. The U-shaped groove does not have a surface orthogonal to the surface on which the groove is formed. As a result, the possibility of threshing is reduced compared to the case where orthogonal surfaces are present.
The average value of the arithmetic average roughness Ra3 of the curved surface in the longitudinal direction is preferably 0.1 μm or more and 0.8 μm or less. When the average value of the arithmetic average roughness Ra3 of the curved surface is in such a range, the water repellency becomes high. Therefore, residues generated by adhesion of the acid (cleaning liquid) containing fluorine are hardly left. And, the possibility of threshing from a curved surface is reduced.
The arithmetic average roughness Ra3 can be measured using the above-described laser microscope. As measurement conditions, the illumination system is coaxial illumination, the measurement magnification is 480 times, the cutoff value λs is zero, the cutoff value λc is 0.08mm, the correction of the terminal effect is provided, the measurement range for each part is 710 μm×533 μm, and the measurement ranges are set from the total two parts of the right end and the left end in the short side direction of the base 22c.
For each measurement range, 4 lines to be measured may be drawn in the horizontal direction of the measurement range at substantially equal intervals, and the surface roughness may be measured. The length of each wire to be measured is, for example, 560 μm. The average value of the arithmetic average roughness Ra3 is an average value of measurement values obtained from 8 lines in total, which are designed as the objects to be measured.
The clamping jig 22 according to the embodiment may be obtained by separately forming the pillar portion 22a, the grip portion 22b, and the base portion 22c, and joining them. Alternatively, the support portion 22a, the grip portion 22b, and the base portion 22c may be integrally formed as a one-piece product. In the case of an integrally formed product, the bonding layer is not present, and therefore the bonding layer is not separated as a boundary. Particularly preferably, the pillar portion 22a, the grip portion 22b, and the base portion 22c are all integrally formed as a one-piece product.
The ceramic containing silicon carbide as a main component contained in the base 22 has a relative density of, for example, 95% or more. The relative density is in accordance with JIS R1634: 1998, the percentage of apparent density of the ceramic relative to the theoretical density of the ceramic. Regarding the theoretical density of the ceramic, the content of each component constituting the ceramic was determined by ICP (Inductively Coupled Plasma) luminescence spectroscopy or fluorescent X-ray analysis, and each component was identified by X-ray diffraction using cukα rays. If the identified component is SiC, B 4 C, the values of Si and B contents obtained by ICP emission spectrometry or fluorescent X-ray analysis are converted into SiC and B 4 C。
At least the upper main surface 22c' of the base 22c has an area of 170 μm, for example 2 The above coarse-grain-like silicon carbide particles and fine-grain-like silicon carbide particles having a crystal grain diameter of 8 μm or less. In this case, it is of course also possible to have a grain diameter of more than 8 μm and an area of less than 170. Mu.m 2 Silicon carbide particles of (a).
When at least the upper main surface 22c' of the base 22c includes 6 area% or more and 15 area% or less, the area is 170 μm 2 In the case of the coarse-grain silicon carbide particles described above, even if fine cracks are generated in the upper main surface 22c' due to thermal shock or mechanical shock, the progress of the cracks can be suppressed by the coarse-grain silicon carbide particles. As a result, mechanical properties such as strength and rigidity and thermal shock resistance are improved.
The coarse silicon carbide particles may contain at least one of open pores and closed pores. When the coarse-grain-like silicon carbide particles contain at least one of open pores and closed pores, even if fine cracks are formed in the coarse-grain-like silicon carbide particles due to thermal shock or mechanical impact, the progress of the cracks can be suppressed by the open pores and the closed pores. As a result, the thermal shock resistance is improved.
The upper main surface 22c' particularly preferably contains coarse silicon carbide particles including at least one of a plurality of open pores and closed pores, for example, 2 or more and 5 or less. When at least one of the plurality of open pores and closed pores is included, even if fine cracks are generated in the coarse silicon carbide particles due to thermal shock or mechanical impact, the progress of the cracks can be suppressed by the adjacent open pores and closed pores. As a result, it is difficult to exert an influence on adjacent silicon carbide particles.
The equivalent circle diameter of each open pore and closed pore is, for example, 1 μm or more and 5 μm or less, and is independent of each other. The equivalent circle diameters of the open pores and the closed pores are arithmetic averages of the long diameter and the short diameter of the target pores, and may be obtained by using an observation surface described later. The major axis is the length of the longest portion in the air hole to be measured, which is the equivalent circle diameter, and the minor axis is the length of the longest portion in the direction perpendicular to the major axis.
In order to determine coarse silicon carbide particles, a grinder made of tin is used, and diamond abrasive grains having a particle diameter of 1 to 3 μm are used as needed, and grinding is performed until it is determined that the diamond abrasive grains are produced according to JIS B0601: 2013 The arithmetic average roughness Ra defined by (ISO 4287:1997) is 0.01 μm or less. Next, the base 22C is immersed in sodium hydroxide and potassium nitrate at 1: the polished surface was etched with a heated and melted solution of 1 by mass ratio for 20 seconds.
The etched surface observation optical microscope was used at a magnification of 500 times, and the surface on which silicon carbide particles of various sizes were observed on average was set as the observation surface. The average observed surface of silicon carbide particles of various sizes was not deliberately selected to exist in other regions where the area of one particle was not observed to exceed 15000 μm 2 The area of absence of particles is 170 μm 2 The above particle region refers to a region where coarse silicon carbide particles and fine silicon carbide particles exist on average when the etched surface is observed over a wide range.
The area ratio (area%) of coarse silicon carbide particles on the observation surface was obtained by capturing an image of the observation surface, and was performed by applying an image analysis software "a such as particle analysis by jun" (registered trademark, manufactured by asahi chemical engineering). As a setting, the threshold value as an index indicating the gradation of the image was 150, and the extracted area was 170. Mu.m 2 The total area of the coarse silicon carbide particles is divided by the area of the observation surface, for example, 0.054mm 2 (the transverse length is 0.27mm and the longitudinal length is 0.2 mm) and the value expressed by the percentage is the area ratio of coarse silicon carbide particles.
The particles observed in the observation surface were silicon carbide particles, which can be confirmed by: the distributions of Si and C were confirmed by using a wavelength-dispersive X-ray microscopic analyzer (JXA-8600M type, manufactured by Japan electronic Co., ltd.) and superposed when the distributions of Si and C were superposed.
Next, an embodiment of a method for manufacturing a clamp according to the present invention will be described. The method for manufacturing the clamp according to one embodiment includes the following steps (a) to (d).
(a) And a step of filling particles containing silicon carbide as a main component into a molding die and molding the same to obtain a molded article.
(b) And cutting the molded body to obtain a precursor.
(c) And firing the precursor to obtain a sintered body.
(d) And polishing and grinding at least a portion of the sintered body that is the upper main surface of the base.
In the step (a), first, particles mainly composed of silicon carbide are prepared, for example, by the following steps. As the silicon carbide powder, coarse powder and fine powder were prepared, and ion-exchanged water was mixed with a dispersant as needed by grinding with a ball mill or a bead mill for 40 to 60 hours to prepare a slurry. The mass ratio of the fine powder to the coarse powder may be, for example, 85 mass% or more and 94 mass% or less, or 6 mass% or more and 15 mass% or less.
The particle diameters of the fine particle powder and the coarse particle powder after the pulverization and mixing are in the range of 0.4 μm to 4 μm, 11 μm to 34 μm. Next, a sintering aid composed of boron carbide powder and amorphous carbon powder or a phenol resin and a binder are added to the obtained slurry, and after mixing, spray drying is performed to obtain particles composed mainly of silicon carbide. Examples of the binder include acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide, and the like.
The main component in the particles means that the total of the components other than the binder is 80% by mass or more based on 100% by mass. The content of the component constituting the particles can be determined by a ICP (Inductively Coupled Plasma) luminescence spectroscopic analyzer or a fluorescence X-ray analyzer, for example.
Next, the obtained pellets are filled in a molding die, and pressurized, for example, at a pressure of 49MPa or more and 147MPa or more to obtain a molded article. The obtained molded article is subjected to step (b). Specifically, the obtained molded body is subjected to cutting processing to obtain a precursor of the clamping jig according to one embodiment. The precursor obtained is supplied to step (c). Specifically, the obtained precursor is degreased in a nitrogen atmosphere at a temperature of 450 ℃ to 650 ℃ for 2 hours to 10 hours, and a degreased body is obtained. Then, the degreased body is kept at a temperature of 1800 ℃ to 2200 ℃ for 3 hours to 6 hours under a reduced pressure atmosphere of an inert gas such as argon, thereby obtaining a sintered body.
Next, the obtained sintered body is supplied to step (d). Specifically, the sintered body obtained in the step (c) is polished and ground at least at a portion of the upper main surface of the base. The substrate to be polished is not limited, and examples thereof include felt, cotton tape, wood cotton tape, and the like. Examples of the polishing agent include diamond powder and green silicon carbide (GC) powder. These abrasives are added to oils and fats and used in the form of paste.
The average particle diameter of the polishing agent is, for example, 0.5 μm or more and 6 μm or less. The substrate has an outer diameter of 150mm and a rotational speed of, for example, 28 m/min to 170 m/min. The polishing time is, for example, 0.5 minutes or more and 5 minutes or less. In order to obtain a clamp for clamping in which the ratio (Ra 1/Ra 2) of the average value of the arithmetic average roughness Ra1 to the average value of the arithmetic average roughness Ra2 is 0.9 to 1.3, the average particle diameter of the abrasive is set to 2 μm to 6 μm.
The difference in section height (rδcl) was measured for the clamp obtained by the method for manufacturing the clamp according to one embodiment. First, the above-described cross-sectional height difference (rδcl) is measured on the upper main surface 22c' of the base 22c, and an average value is obtained. The average value was 0.1821. Mu.m. Similarly, the above-described cross-sectional height difference (rδcl) is measured on the lower main surface 22c″ of the base 22c, and an average value is obtained. The average value was 0.2586. Mu.m.
In this way, it is seen that the average value of the difference in section height (rδcl) between the section height at the load length rate of 25% in the roughness curve in the longitudinal direction of the base 22c and the section height at the load length rate of 75% in the roughness curve is smaller in the upper main surface 22c' than in the lower main surface 22c″.
The above-described cross-sectional height difference (rδcs) was measured on the upper main surface 22c' of the base 22c to obtain an average value. The average value was 0.1659. Mu.m. Similarly, the above-described cross-sectional height difference (rδcs) is measured on the lower main surface 22c″ of the base 22c, and an average value is obtained. The average value was 0.2614. Mu.m.
In this way, it is seen that the average value of the difference in section height (rδcs) between the section height at the load length rate of 25% in the roughness curve of the base 22c and the section height at the load length rate of 75% in the roughness curve is smaller in the upper main surface 22c' than in the lower main surface 22c″.
Next, the arithmetic average roughness Ra of the upper main surface 22c' of the base 22c was measured for the clamping jig obtained by the manufacturing method of the clamping jig according to the embodiment. The arithmetic average roughness Ra1 in the longitudinal direction of the upper main surface 22c' of the base 22c was 0.1296 μm. On the other hand, the arithmetic average roughness Ra2 in the short side direction of the upper main surface 22c' of the base 22c is 0.1218 μm. The ratio (Ra 1/Ra 2) of the arithmetic mean roughness Ra1 to the arithmetic mean roughness Ra2 was 1.06.
The cross-sectional height difference (rδcl), the cross-sectional height difference (rδcs), the arithmetic average roughness Ra1, and the arithmetic average roughness Ra2 are measured values obtained by the above-described measurement methods, and the average value of each is a value calculated from these measured values.
The clamping jig obtained by the above-described production method is less likely to cause whitening on the upper main surface of the base portion that is easily exposed to an acid containing fluorine such as hydrofluoric acid or hypofluorite. Therefore, the clamp for clamping of the present invention can be used as a member of a cleaning device or the like for a long period of time with reduced deterioration of the external appearance.
Description of the reference numerals
1. Shell body
2. Chamber chamber
3. A first window part
4. First gate
5. Transfer arm
6. A second window part
7. Second gate
8. Rotary chuck
9. Gas supply unit
10. Treatment cup
11. Lower plate
12. Rotary plate
13. Cylinder body
14. Belt with a belt body
15. Motor with a motor housing
16. Upper plate
17. Second shaft body
18. Second horizontal plate
19. Motor with a motor housing
20. Second lifting mechanism
21. Second flow path
22. Clamp for clamping
22a pillar portion
22b grip
22c base
22c' upper main surface
22c "lower main surface
23. First flow path
24. First shaft body
25. Horizontal plate
26. First lifting mechanism
30. And (3) a cleaning device.
Claims (17)
1. A clamp for clamping, wherein,
the clamp for clamping includes:
a pillar section;
a holding part which is positioned at one end of the support column part and holds the outer periphery of the substrate; and
a base portion which is positioned at the other end portion of the pillar portion and supports the pillar portion,
at least the base part comprises a ceramic containing silicon carbide as a main component,
the average value of the section height differences (R delta cl) of the differences between the section heights at the load length rate of 25% in the roughness curve in the longitudinal direction of the base and the section heights at the load length rate of 75% in the roughness curve is smaller in the upper main surface of the base than in the lower main surface of the base.
2. The clamping jig according to claim 1, wherein,
the difference between the average value of the section height differences (Rδcl) of the upper main surface of the base and the average value of the section height differences (Rδcl) of the lower main surface of the base is 0.16 [ mu ] m or more.
3. The clamping jig according to claim 2, wherein,
an average value of a cross-sectional height difference (Rδcl) representing a difference between a cross-sectional height at a load length rate of 25% in a roughness curve of a lower main surface of the base portion in a longitudinal direction of the base portion and a cross-sectional height at a load length rate of 75% in the roughness curve is 0.35 [ mu ] m or less.
4. A clamp for clamping, wherein,
the clamp for clamping includes:
a pillar section;
a holding part which is positioned at one end of the support column part and holds the outer periphery of the substrate; and
a base portion which is positioned at the other end portion of the pillar portion and supports the pillar portion,
at least the base part comprises a ceramic containing silicon carbide as a main component,
the average value of the section height differences (Rδcs) representing the differences between the section heights at the load length ratios of 25% and 75% in the roughness curves of the base portion in the short side direction is smaller on the upper main surface of the base portion than on the lower main surface of the base portion.
5. The clamping jig according to claim 4, wherein,
the difference between the average value of the section height differences (Rδcs) of the upper main surface of the base and the average value of the section height differences (Rδcs) of the lower main surface of the base is 0.16 μm or more.
6. The clamping jig according to claim 4 or 5, wherein,
an average value of a cross-sectional height difference (Rδcs) representing a difference between a cross-sectional height at a load length rate of 25% in a roughness curve of a lower main surface of the base portion in a short side direction of the base portion and a cross-sectional height at a load length rate of 75% in the roughness curve is 0.35 [ mu ] m or less.
7. The clamping jig according to any one of claims 1 to 6, wherein,
the upper main surface of the base is a mirror surface or a glossy surface,
the ratio (Ra 1/Ra 2) of the average value of the arithmetic mean roughness (Ra 1) in the long side direction of the base to the average value of the arithmetic mean roughness (Ra 2) in the short side direction of the base is 0.9 to 1.3.
8. The clamping jig according to claim 7, wherein,
the mirror surface or the glossy surface has a cutting mark along at least one of a short side direction and a long side direction of the base.
9. The clamping jig according to any one of claims 1 to 8, wherein,
the upper main surface of the base portion and at least one side surface of the base portion are connected by a curved surface.
10. The clamping jig according to claim 9, wherein,
the curved surface has a plurality of grooves along the short side direction.
11. The clamping jig according to claim 10, wherein,
the groove is a U-shaped groove.
12. The clamping jig according to any one of claims 9 to 11, wherein,
an average value of an arithmetic average roughness (Ra 3) of the curved surface in the longitudinal direction is 0.1 μm or more and 0.8 μm or less.
13. The clamping jig according to any one of claims 1 to 12, wherein,
the pillar portion includes a ceramic containing silicon carbide as a main component, and at least the pillar portion and the base portion are integrally formed.
14. The clamping jig according to any one of claims 1 to 13, wherein,
at least the upper main surface of the base comprises an area of 170 μm in which 6 area% or more and 15 area% or less 2 The above coarse-grained silicon carbide particles.
15. The clamping jig according to claim 14, wherein,
the coarse-grain silicon carbide particles include at least any one of open pores and closed pores.
16. A method for manufacturing a clamp for clamping, wherein,
the manufacturing method of the clamp for clamping comprises the following steps:
a step of filling particles containing silicon carbide as a main component into a molding die and molding the same to obtain a molded article;
a step of cutting the molded body to obtain a precursor;
a step of firing the precursor to obtain a sintered body; and
and polishing and grinding at least a portion of the sintered body that is the upper main surface of the base.
17. A cleaning device, wherein,
the cleaning device includes the clamp jig according to any one of claims 1 to 15.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020170153 | 2020-10-07 | ||
| JP2020-170153 | 2020-10-07 | ||
| PCT/JP2021/035103 WO2022075093A1 (en) | 2020-10-07 | 2021-09-24 | Clamping tool and washing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116348211A true CN116348211A (en) | 2023-06-27 |
Family
ID=81126761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180068340.6A Pending CN116348211A (en) | 2020-10-07 | 2021-09-24 | Clamp for clamping and cleaning device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2022075093A1 (en) |
| KR (1) | KR20230063892A (en) |
| CN (1) | CN116348211A (en) |
| TW (1) | TWI810667B (en) |
| WO (1) | WO2022075093A1 (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54135893A (en) | 1978-04-14 | 1979-10-22 | Mitsui Toatsu Chem Inc | Production of particles of crosslinked urea-formaldehyde polymer |
| JPH04130627A (en) | 1990-09-20 | 1992-05-01 | Fuji Electric Co Ltd | Plasma etching device |
| JP4565433B2 (en) * | 2001-11-27 | 2010-10-20 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP2005285798A (en) * | 2004-03-26 | 2005-10-13 | Dainippon Screen Mfg Co Ltd | Substrate holding mechanism, and substrate treatment apparatus and substrate treatment method using the same |
| JP2005317749A (en) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | Holding body for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus loaded therewith |
| CN102621019A (en) * | 2011-01-30 | 2012-08-01 | 纬创资通股份有限公司 | Clamping fixture, friction testing device possessing the same, and friction testing method |
| JP6708460B2 (en) * | 2016-03-30 | 2020-06-10 | 京セラ株式会社 | Method for manufacturing joined body |
| CN210549675U (en) * | 2019-09-02 | 2020-05-19 | 宝利根(重庆)电子科技有限公司 | Clamping jig |
-
2021
- 2021-09-24 CN CN202180068340.6A patent/CN116348211A/en active Pending
- 2021-09-24 JP JP2022555368A patent/JPWO2022075093A1/ja active Pending
- 2021-09-24 KR KR1020237011848A patent/KR20230063892A/en unknown
- 2021-09-24 WO PCT/JP2021/035103 patent/WO2022075093A1/en active Application Filing
- 2021-09-30 TW TW110136539A patent/TWI810667B/en active
Also Published As
| Publication number | Publication date |
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| TWI810667B (en) | 2023-08-01 |
| KR20230063892A (en) | 2023-05-09 |
| JPWO2022075093A1 (en) | 2022-04-14 |
| TW202218039A (en) | 2022-05-01 |
| WO2022075093A1 (en) | 2022-04-14 |
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