CN116332193A - 烧结硅氧负极材料的方法 - Google Patents
烧结硅氧负极材料的方法 Download PDFInfo
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- CN116332193A CN116332193A CN202310561535.5A CN202310561535A CN116332193A CN 116332193 A CN116332193 A CN 116332193A CN 202310561535 A CN202310561535 A CN 202310561535A CN 116332193 A CN116332193 A CN 116332193A
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- sintering
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- 238000005245 sintering Methods 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 68
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 title claims description 32
- 239000007773 negative electrode material Substances 0.000 title claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 129
- 239000002245 particle Substances 0.000 claims abstract description 88
- 238000000498 ball milling Methods 0.000 claims abstract description 59
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 48
- 239000000203 mixture Substances 0.000 claims abstract description 46
- 238000002156 mixing Methods 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 37
- 239000010405 anode material Substances 0.000 claims abstract description 30
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 11
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 54
- 229910052744 lithium Inorganic materials 0.000 claims description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000001035 drying Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 15
- 239000002482 conductive additive Substances 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 13
- 239000011230 binding agent Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 claims description 7
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 7
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 claims description 7
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 claims description 7
- 229920003048 styrene butadiene rubber Polymers 0.000 claims description 7
- 239000006230 acetylene black Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 6
- 238000001291 vacuum drying Methods 0.000 claims description 5
- 239000006229 carbon black Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000007873 sieving Methods 0.000 claims description 4
- 238000005265 energy consumption Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000004904 shortening Methods 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 230000001351 cycling effect Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- SBLRHMKNNHXPHG-UHFFFAOYSA-N 4-fluoro-1,3-dioxolan-2-one Chemical compound FC1COC(=O)O1 SBLRHMKNNHXPHG-UHFFFAOYSA-N 0.000 description 2
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910013872 LiPF Inorganic materials 0.000 description 1
- 101150058243 Lipf gene Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000006182 cathode active material Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000713 high-energy ball milling Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
- C01B33/182—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by reduction of a siliceous material, e.g. with a carbonaceous reducing agent and subsequent oxidation of the silicon monoxide formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/058—Construction or manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118899428A (zh) * | 2024-10-09 | 2024-11-05 | 合肥综合性国家科学中心能源研究院(安徽省能源实验室) | 一种预镁氧化亚硅的制备方法及应用 |
Citations (12)
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JP2003109589A (ja) * | 2001-09-28 | 2003-04-11 | Mitsubishi Materials Corp | リチウム電池用負極活物質材料及びその製造方法並びに該材料を用いた負極 |
CN1633477A (zh) * | 2002-02-18 | 2005-06-29 | 西巴特殊化学品控股有限公司 | 生产低氧化硅、二氧化硅和/或碳化硅平面平行结构的方法,采用这些方法获得的平面平行结构和它们的应用 |
CN105793194A (zh) * | 2013-11-28 | 2016-07-20 | 魁北克电力公司 | 具有纳米级丝状结构的SiOx的制备方法和其在锂离子蓄电池中作为阳极材料的用途 |
CN106744985A (zh) * | 2016-12-30 | 2017-05-31 | 天津惠利科技股份有限公司 | 一氧化硅纳米材料及其制备方法 |
WO2018177294A1 (zh) * | 2017-03-27 | 2018-10-04 | 储晞 | 利用金刚线切割硅料所副产的硅泥来生产含硅产品的方法、装置与系统 |
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WO2021128603A1 (zh) * | 2019-12-27 | 2021-07-01 | 江西壹金新能源科技有限公司 | 一种用于锂离子电池负极的改性一氧化硅材料及其制备方法 |
CN113258159A (zh) * | 2021-05-06 | 2021-08-13 | 哈尔滨工程大学 | 一种再生锂离子电池电极材料的装置及方法 |
CN113620301A (zh) * | 2017-05-05 | 2021-11-09 | 储晞 | 一种生产氧化亚硅的方法及装置 |
CN114180585A (zh) * | 2021-11-30 | 2022-03-15 | 长沙矿冶研究院有限责任公司 | 一种批量制备高纯一氧化硅的方法及装置 |
CN114388770A (zh) * | 2022-01-24 | 2022-04-22 | 浙江锂宸新材料科技有限公司 | 一种高容量高首效硅氧负极材料及其制备方法 |
CN114649503A (zh) * | 2020-12-18 | 2022-06-21 | 懋青恺有限公司 | 一种锂电池硅碳负极片及其制备方法 |
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2023
- 2023-05-18 CN CN202310561535.5A patent/CN116332193B/zh active Active
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CN1633477A (zh) * | 2002-02-18 | 2005-06-29 | 西巴特殊化学品控股有限公司 | 生产低氧化硅、二氧化硅和/或碳化硅平面平行结构的方法,采用这些方法获得的平面平行结构和它们的应用 |
CN105793194A (zh) * | 2013-11-28 | 2016-07-20 | 魁北克电力公司 | 具有纳米级丝状结构的SiOx的制备方法和其在锂离子蓄电池中作为阳极材料的用途 |
CN106744985A (zh) * | 2016-12-30 | 2017-05-31 | 天津惠利科技股份有限公司 | 一氧化硅纳米材料及其制备方法 |
WO2018177294A1 (zh) * | 2017-03-27 | 2018-10-04 | 储晞 | 利用金刚线切割硅料所副产的硅泥来生产含硅产品的方法、装置与系统 |
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CN113258159A (zh) * | 2021-05-06 | 2021-08-13 | 哈尔滨工程大学 | 一种再生锂离子电池电极材料的装置及方法 |
CN114180585A (zh) * | 2021-11-30 | 2022-03-15 | 长沙矿冶研究院有限责任公司 | 一种批量制备高纯一氧化硅的方法及装置 |
CN114388770A (zh) * | 2022-01-24 | 2022-04-22 | 浙江锂宸新材料科技有限公司 | 一种高容量高首效硅氧负极材料及其制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118899428A (zh) * | 2024-10-09 | 2024-11-05 | 合肥综合性国家科学中心能源研究院(安徽省能源实验室) | 一种预镁氧化亚硅的制备方法及应用 |
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Effective date of registration: 20240304 Address after: B1001, Wuhan University Shenzhen Industry University Research Building, No. 6 Yuexing Second Road, High tech Zone Community, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province, 518052 Applicant after: Shenzhen Ningshi Material Technology Co.,Ltd. Country or region after: China Address before: B1001, Wuhan University Shenzhen Industry, University and Research Building, No. 6, Yuexing Second Road, Gaoxin District Community, Yuehai Street, Nanshan District, Shenzhen, Guangdong Province, 518000 Applicant before: Shenzhen Soft Silicon Material Technology Co.,Ltd. Country or region before: China |
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