CN116317954A - Voltage controlled oscillator with wide tuning range and low phase noise - Google Patents
Voltage controlled oscillator with wide tuning range and low phase noise Download PDFInfo
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- CN116317954A CN116317954A CN202310283995.6A CN202310283995A CN116317954A CN 116317954 A CN116317954 A CN 116317954A CN 202310283995 A CN202310283995 A CN 202310283995A CN 116317954 A CN116317954 A CN 116317954A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention discloses a voltage-controlled oscillator with a wide tuning range and low phase noise, and belongs to the technical field of integrated circuits. The resonant circuit is used for generating an oscillation signal of the voltage-controlled oscillator; the resonant circuit is a capacitance-inductance resonant circuit and consists of an inductance, a variable capacitance array and a switch capacitance array; the switch capacitor array and the variable capacitor array increase the tuning range of the circuit; the negative resistance circuit is used for generating negative resistance and counteracting positive resistance generated by the resonance circuit; the noise reduction module is used for inhibiting phase noise of the voltage-controlled oscillator; the LC filter circuit is used for filtering the second harmonic wave, the capacitance feedback is used for increasing the feedback coefficient from the resonant cavity to the MOS tube, and the phase noise of the voltage-controlled oscillator is reduced. The structure provided by the invention can inhibit phase noise under the condition of wide tuning range, does not increase extra output power, and improves the swing of output voltage.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a capacitor inductance voltage-controlled oscillator with low phase noise and large tuning range.
Background
With the vigorous development of the communication market, the requirements of wireless communication technology are also increasing. Personal wireless communication systems, wireless local area networks, satellite navigation systems, and satellite television have seen a growing trend. Meanwhile, the wireless communication technology is widely applied to the high-end technical fields of space technology, electronic countermeasure and the like. In these communication fields, the performance of the radio frequency front end plays a key role, so that the radio frequency front end is always a popular and important research in recent years.
The frequency synthesizer is used as an important module of the radio frequency front end and has great influence on the performance of the radio frequency front end. The voltage controlled oscillator (Voltage controlled oscillators, VCO) is also the key to the frequency synthesizer generating the frequency signal. The performance of the voltage-controlled oscillator has a great influence on the performance of the frequency synthesizer and even the performance of the radio frequency front end. It is therefore very important and challenging to design a voltage controlled oscillator that is well behaved and it is extremely difficult to keep the phase noise low over a wide tuning range. It is desirable to design a voltage controlled oscillator as little as possible from factors such as temperature, voltage, process, etc. The main indexes of the voltage-controlled oscillator are as follows: frequency tuning range, output oscillation amplitude, power consumption, phase noise, frequency stability, center frequency, etc.
The design methods of voltage-controlled oscillators are mainly divided into two categories: loop oscillators and capacitive-inductor oscillators. The loop oscillator has poor noise performance and higher power consumption, and limits the application of the loop oscillator in the radio frequency field. The capacitive-inductive resonant circuit of the capacitive-inductive voltage-controlled oscillator has a filtering function and better phase noise performance. The capacitive inductance voltage-controlled oscillator generally adopts a capacitive reactance tube as a frequency tuning element, and the tuning range can only reach twenty percent at maximum, so that the tuning range of the voltage-controlled oscillator can be greatly enlarged by adopting a digital tuning technology.
Disclosure of Invention
The invention aims to solve the technical problems that the phase noise of a voltage-controlled oscillator is changed greatly when a wider tuning range is obtained and the phase noise is worse at high frequency. The voltage-controlled oscillator can obtain a wide tuning range, and meanwhile, the phase noise of the voltage-controlled oscillator is kept basically unchanged or reduced in the whole frequency range, and good phase noise can be obtained at high frequency.
The invention solves the technical problems as follows:
a voltage-controlled oscillator with wide tuning range and low phase noise comprises a resonance circuit, a negative resistance circuit and a noise reduction module;
the resonant circuit is used for generating an oscillation signal of the voltage-controlled oscillator and is a capacitance-inductance resonant circuit; comprising the following steps: a switched capacitor array, a variable capacitor array, and a resonant inductor; the switch array and the variable capacitor array are connected in parallel, and two ends of the resonant inductor are respectively connected with two parallel nodes of the switch array and the variable capacitor array, namely AN A node and AN AN node;
the negative resistance circuit is used for generating negative resistance and counteracting the resistance generated by the resonance circuit; the node A is a first phase connection point of the resonant circuit and the negative resistance circuit and outputs a first resonant signal; the AN node is a second connecting point of the resonant circuit and the negative resistance circuit and outputs a second resonant signal;
the noise reduction module is used for reducing the phase noise of the voltage-controlled oscillator; the two ends of the noise reduction module are respectively connected with the A node and the AN node.
Further, the variable capacitor array is divided into a plurality of groups of parallel structures, each group of control voltage is connected with two variable capacitors, the variable capacitors are connected with reference voltage and then are connected with fixed capacitors in series, one end of the variable capacitor array is connected with AN A node, and the other end of the variable capacitor array is connected with AN AN node.
Furthermore, the switch capacitor array adopts a parallel structure of a bias switch group and a differential switch group, a switch tube is connected with a fixed capacitor, and two ends of the switch capacitor array are respectively connected with AN A node and AN AN node.
Further, the negative resistance circuit includes: PMOS cross-coupled pairs and NMOS cross-coupled pairs;
the sources of the PMOS transistor M1 and the PMOS transistor M2 are connected with the LC filtering structure in the noise reduction module, the grid electrode of the PMOS transistor M1 is connected with the drain electrode of the PMOS transistor M2, and the grid electrode of the PMOS transistor M2 is connected with the drain electrode of the PMOS transistor M1; drains of the PMOS transistor M1 and the PMOS transistor M2 are respectively connected with AN AN node and AN A node;
the source electrodes of the NMOS transistor M3 and the NMOS transistor M4 are connected with the LC filtering structure in the noise reduction module, the grid electrode of the NMOS transistor M3 is connected with the drain electrode of the NMOS transistor M4, and the grid electrode of the NMOS transistor M4 is connected with the drain electrode of the NMOS transistor M3; drains of the NMOS transistor M3 and the NMOS transistor M4 are connected to AN node and AN node, respectively.
Further, the noise reduction module comprises an LC filter structure and a capacitance feedback structure;
the LC filter structure is formed by connecting an inductor and a capacitor in parallel, one end of the inductor L1 connected in parallel with the capacitor C1 is connected with the source electrode of the PMOS transistor M1, and the other end of the inductor L1 is connected with the power supply VDD; the inductor L2 and the capacitor C2 are connected in parallel to the source electrode of the PMOS transistor M2, and the other end of the inductor L2 is connected with the power supply VDD; an inductor L3 and a capacitor C7 are connected in parallel, one end of the inductor L3 is connected to the source electrode of the NMOS transistor M3, and the other end of the inductor L is connected to the ground GND; an inductor L4 and a capacitor C8 are connected in parallel, one end of the inductor L4 is connected to the source electrode of the NMOS transistor M4, and the other end of the inductor L is connected to the ground GND; the second harmonic of the voltage-controlled oscillator is filtered;
the capacitance feedback structure is connected with the source electrode and the drain electrode of the MOS tube through the capacitance, and increases the feedback coefficient from the resonant circuit to the MOS tube, thereby achieving the effect of inhibiting the flicker noise of the voltage-controlled oscillator.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a voltage-controlled oscillator with wide tuning range and low phase noise, which increases the frequency tuning range of the voltage-controlled oscillator by using a switched capacitor array and a variable capacitor array. And the LC filter structure is used for adding high impedance of a second harmonic wave, so that phase noise is reduced. And the capacitor feedback structure is utilized to increase the feedback coefficient and reduce the phase noise. The structure provided by the invention can realize a wider tuning range and effectively inhibit phase noise under the condition of not increasing extra power consumption.
Drawings
The invention is described below with reference to the drawings and examples.
Fig. 1 is a schematic diagram of a wideband low-phase noise controlled oscillator according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a switched capacitor array according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a variable capacitance array according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a filtering module according to an embodiment of the invention.
Fig. 5 is a phase noise simulation contrast diagram according to an embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
Referring to fig. 1, which is a schematic diagram of a broadband low-phase noise voltage controlled oscillator, fig. 1 mainly illustrates connection relations among a switched capacitor array, a variable capacitor array and a noise reduction module. The voltage controlled oscillators employ complementary pairs of mutually coupled oscillators. M1 and M2 are PMOS mutual coupling pairs, and M3 and M4 are NMOS mutual coupling pairs. The resonant circuit includes a variable capacitance array, a switched capacitance array, and a resonant inductance connected in parallel between the A node and the AN node. The noise reduction module comprises an LC filter structure and a capacitance feedback structure. The upper LC filter structure is connected between the supply voltage VDD and the source of the PMOS cross-coupled pair and the lower LC filter structure is connected between ground GND and the source of the NMOS cross-coupled pair. The capacitance feedback structure is connected between the source electrode and the drain electrode of the four MOS tubes. M1 and M2 are PMOS transistors, which are all called P-channel metal oxide semiconductor field effect transistors; m3 and M4 are NMOS transistors, commonly referred to as N-channel metal oxide semiconductor field effect transistors.
Referring to fig. 2, a schematic diagram of a switched capacitor array is shown. The switched capacitor array is divided into two parts, one part is of a traditional switched capacitor structure, for example, a gate electrode of a switch tube M27 is connected with a control signal K1, a source electrode of the switch tube M27 is connected with a drain electrode of the switch tube C28 and is connected with the C27, and meanwhile, resistors R28 and R27 which are connected in series are connected between the source electrode and the drain electrode of the switch tube M27, so that the traditional one-stage switched capacitor structure is formed. The other part is a differential switch structure. Taking the third stage as an example, the switching tubes M24, M25 and M26 are connected in series, the switching tube M24 is connected with the control signal K3, the switching tube M25 is connected with the control signal K2, and the switching tube M26 is connected with the control signal K1. The drain of M24 is connected to the capacitor C25, the source of M26 is connected to the capacitor C26, and resistors R25 and R26 connected in series between the drain of M24 and the source of M26. Capacitor C25 is connected to node AN and capacitor C26 is connected to node a. According to the switch capacitor group and the differential switch capacitor group, balanced high linearity can be realized, and the Q value of the structure is higher, and the performance of phase noise is better.
Referring to fig. 3, a schematic diagram of a variable capacitance array structure is shown. The variable capacitor array is formed by parallel connection of variable capacitor groups. For example, a first set of variable capacitor arrays, C var1 And C var2 Series connection, add V in the middle tune Control voltage, reference voltage V is added to the other ends of the two variable capacitors bais1 ，C var1 Series fixed capacitor C 31 ，C var1 Series fixed capacitor C 32 . Different reference voltage values correspond to different capacitance value change ranges of the variable capacitor, and multiple groups of different reference voltage values can expand the range of the whole tuning voltage. The variable capacitor array performs fine adjustment on the frequency after the switched capacitor array performs coarse adjustment on the frequency by controlling the voltage across the variable capacitor. The capacitance value of the variable capacitor is changed, so that each frequency line has certain overlap with the adjacent frequency line, and the aim of continuously and adjustably outputting frequency is fulfilled.
Referring to fig. 4, the noise reduction module connected to the PMOS transistor M1 is taken as an example, and the structure of the noise reduction module in the present invention is described. The LC filter structure is formed by connecting L1 and C1 in parallel, wherein one end of the LC filter structure is connected with a power supply voltage VDD, and the other end of the LC filter structure is connected with a source electrode of the PMOS tube. C3 is a capacitance feedback structure connected between the source electrode and the drain electrode of the PMOS tube. Wherein the LC filter structure has a resonant frequency of ω 1 If the resonant frequency of the resonant cavity of the voltage-controlled oscillator is omega 0 . When omega 1 ＝2ω 0 A high frequency is generated around the second harmonic frequencyImpedance. The impedance value is determined by the quality factor of the inductance in the filter module. The impedance limits the current value flowing through the PMOS cross-coupling pair tube working in the linear region by means of voltage division, so that the loss generated by the resonant circuit is reduced. The mode of adding the feedback capacitor C3 between the source electrode and the drain electrode of the MOS tube reduces phase noise, so that the feedback coefficient from the resonant cavity of the voltage-controlled oscillator to the MOS tube can be increased, and the high amplitude of the resonant cavity is ensured while the effective noise is reduced.
Referring to fig. 5, a phase noise simulation contrast plot is shown. And performing simulation comparison on the voltage-controlled oscillator which is not added with the noise reduction module and is added with the noise reduction module. As shown in the result graph, the voltage-controlled oscillator without the noise reduction module has the phase noise of-46.51 dBc/Hz at the position which is 1KHz away from the center frequency and the phase noise of-78.72 dBc/Hz at the position which is 10KHz away from the center frequency. The voltage-controlled oscillator added with the noise reduction module has the phase noise of-63.1 dBc/Hz at the position which is 1KHz away from the center frequency and has the phase noise of-93.38 dBc/Hz at the position which is 10KHz away from the center frequency. By comparison, after the noise reduction module is added, the phase noise performance of the voltage-controlled oscillator is obviously improved.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (5)
1. The voltage-controlled oscillator with wide tuning range and low phase noise is characterized by comprising a resonance circuit, a negative resistance circuit and a noise reduction module;
the resonant circuit is used for generating an oscillation signal of the voltage-controlled oscillator and is a capacitance-inductance resonant circuit; comprising the following steps: a switched capacitor array, a variable capacitor array, and a resonant inductor; the switch array and the variable capacitance array are connected in parallel, and two ends of the resonant inductor are respectively connected with two parallel nodes, namely AN A node and AN AN node, of the switch array and the variable capacitance array;
the negative resistance circuit is used for generating negative resistance and counteracting the resistance generated by the resonance circuit; the node A is a first phase connection point of the resonant circuit and the negative resistance circuit and outputs a first resonant signal; the AN node is a second connecting point of the resonant circuit and the negative resistance circuit and outputs a second resonant signal;
the noise reduction module is used for reducing the phase noise of the voltage-controlled oscillator; one end of the noise reduction module is connected with the A node and the AN node, and the other end of the noise reduction module is connected with the power supply VDD or the ground GND.
2. The voltage-controlled oscillator of claim 1, wherein the variable capacitor array is divided into a plurality of groups of parallel structures, each group of control voltages is connected with two variable capacitors, the variable capacitors are connected with a reference voltage, the variable capacitors are connected with fixed capacitors in series, one end of the variable capacitor array is connected with AN node a, and the other end is connected with AN node AN.
3. The voltage-controlled oscillator with wide tuning range and low phase noise according to claim 1, wherein the switched capacitor array adopts a parallel structure of a bias switch group and a differential switch group, the switch tube is connected with a fixed capacitor, and two ends of the switched capacitor array are respectively connected with AN node a and AN node AN.
4. The wide tuning range and low phase noise voltage controlled oscillator of claim 1, wherein said negative resistance circuit comprises: PMOS cross-coupled pairs and NMOS cross-coupled pairs;
the sources of the PMOS transistor M1 and the PMOS transistor M2 are connected with the LC filtering structure in the noise reduction module, the grid electrode of the PMOS transistor M1 is connected with the drain electrode of the PMOS transistor M2, and the grid electrode of the PMOS transistor M2 is connected with the drain electrode of the PMOS transistor M1; drains of the PMOS transistor M1 and the PMOS transistor M2 are respectively connected with AN AN node and AN A node;
the source electrodes of the NMOS transistor M3 and the NMOS transistor M4 are connected with the LC filtering structure in the noise reduction module, the grid electrode of the NMOS transistor M3 is connected with the drain electrode of the NMOS transistor M4, and the grid electrode of the NMOS transistor M4 is connected with the drain electrode of the NMOS transistor M3; drains of the NMOS transistor M3 and the NMOS transistor M4 are connected to AN node and AN node, respectively.
5. The wide tuning range and low phase noise voltage controlled oscillator of claim 4, wherein said noise reduction module comprises an LC filter structure and a capacitive feedback structure;
the LC filter structure is formed by connecting an inductor and a capacitor in parallel, one end of the inductor L1 connected in parallel with the capacitor C1 is connected with the source electrode of the PMOS transistor M1, and the other end of the inductor L1 is connected with the power supply VDD; the inductor L2 and the capacitor C2 are connected in parallel to the source electrode of the PMOS transistor M2, and the other end of the inductor L2 is connected with the power supply VDD; an inductor L3 and a capacitor C7 are connected in parallel, one end of the inductor L3 is connected to the source electrode of the NMOS transistor M3, and the other end of the inductor L is connected to the ground GND; an inductor L4 and a capacitor C8 are connected in parallel, one end of the inductor L4 is connected to the source electrode of the NMOS transistor M4, and the other end of the inductor L is connected to the ground GND; the second harmonic of the voltage-controlled oscillator is filtered;
the capacitance feedback structure is connected with the source electrode and the drain electrode of the MOS tube through the capacitance, and increases the feedback coefficient from the resonant circuit to the MOS tube, thereby achieving the effect of inhibiting the flicker noise of the voltage-controlled oscillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310283995.6A CN116317954A (en) | 2023-03-22 | 2023-03-22 | Voltage controlled oscillator with wide tuning range and low phase noise |
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| CN202310283995.6A CN116317954A (en) | 2023-03-22 | 2023-03-22 | Voltage controlled oscillator with wide tuning range and low phase noise |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116781014A (en) * | 2023-06-30 | 2023-09-19 | 重庆西南集成电路设计有限责任公司 | Voltage controlled oscillator |
| CN117240220A (en) * | 2023-11-13 | 2023-12-15 | 成都明夷电子科技有限公司 | Radio frequency voltage controlled oscillator and electronic equipment |
| CN118300538A (en) * | 2024-06-04 | 2024-07-05 | 中国人民解放军国防科技大学 | On-chip oscillator with low area overhead based on carbon nano tube |
-
2023
- 2023-03-22 CN CN202310283995.6A patent/CN116317954A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116781014A (en) * | 2023-06-30 | 2023-09-19 | 重庆西南集成电路设计有限责任公司 | Voltage controlled oscillator |
| CN117240220A (en) * | 2023-11-13 | 2023-12-15 | 成都明夷电子科技有限公司 | Radio frequency voltage controlled oscillator and electronic equipment |
| CN118300538A (en) * | 2024-06-04 | 2024-07-05 | 中国人民解放军国防科技大学 | On-chip oscillator with low area overhead based on carbon nano tube |
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