CN116299888A - Optical interconnection device and method of manufacturing the same - Google Patents
Optical interconnection device and method of manufacturing the same Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
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Abstract
The invention relates to the technical field of chips, and provides an optical interconnection device and a manufacturing method thereof. Wherein the optical interconnect device comprises: a plurality of electrical chips including a first electrical chip and a second electrical chip; a first optical interconnect having a plurality of optical waveguides; wherein the first electrical chip and the second electrical chip are communicatively connected by an optical waveguide of the first optical interconnect. According to the embodiment of the invention, a plurality of electric chips can realize a mixed cube network communication interconnection topology structure or other complex interconnection topologies through optical interconnection, and simultaneously carry out parallel processing on information, and the chips are provided with tight information interconnection, so that the requirements of an artificial intelligence algorithm on computing capacity and bandwidth can be better met. Compared with the electric interconnection, the optical interconnection has the advantages of large bandwidth, low time delay, low power consumption, high integration level and strong electromagnetic interference resistance.
Description
Technical Field
The present invention relates to the field of chip technology, and more particularly, to an optical interconnection device and a method for manufacturing the same.
Background
Very large scale integrated circuit technology has become the mainstay supporting the evolution of the information-based society. Various types of chips widely used in information systems generally rely on upgrades in the electrical chip process to achieve performance improvements and power consumption optimizations. However, as chip technology approaches physical limits, the pace of moore's law progress is slowing down, and new ideas are needed for further development. The traditional information interconnection is mainly realized by conducting electrons through a copper medium, the transmission speed and the distance of the electronic information are limited by a resistor-capacitor time constant and electrical loss, the diameter of a required copper wire is obviously increased along with the increase of the transmission speed and the transmission distance, and the energy consumption and the bandwidth density of the interconnection are limited by signal crosstalk between electronic information channels. On the other hand, high-speed interconnection is often required between chips, for example, as the field of artificial intelligence expands, deep learning algorithm applications often require large amounts of data to be communicated between a computing unit and a storage unit at high speeds for computing chips. This makes the power consumption and bandwidth density of conventional electrical interconnects a more serious problem, limiting the development of higher performance artificial intelligence chips.
Disclosure of Invention
The invention provides an optical interconnection device and a manufacturing method thereof, wherein an optical interconnection element is used as an interconnection medium between chips, so that various defects caused by electric interconnection are avoided.
According to an aspect of the present invention, there is provided an optical interconnection device including: a plurality of electrical chips including a first electrical chip and a second electrical chip; a first optical interconnect having a plurality of optical waveguides; wherein the first electrical chip and the second electrical chip are communicatively connected by an optical waveguide of the first optical interconnect.
In some embodiments, the optical interconnect device further comprises: an electro-optical conversion unit connected to the first electrical chip for carrying information carried by an electrical signal of the first electrical chip into an optical signal, the optical signal being transmitted in an optical waveguide of the first optical interconnect; a photoelectric conversion unit connected to the second electric chip for converting the received optical signal into an electric signal transmitted to the second electric chip; wherein a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnect.
In some embodiments, the first optical interconnect is disposed on the carrier substrate; the plurality of electrical chips are disposed on the first optical interconnect; wherein the first optical interconnect includes an optical sub-integrated circuit including the plurality of optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit.
In some embodiments, the optical interconnect device further comprises: a plurality of optical fibers; and a second optical interconnect having a plurality of optical waveguides, the second optical interconnect being interconnected with the first optical interconnect by the plurality of optical fibers; wherein a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: a transmission path sequentially passing through the optical waveguide in the first optical interconnect, at least one of the plurality of optical fibers, and the optical waveguide of the second optical interconnect.
In some embodiments, the first optical interconnect and the second optical interconnect are disposed on the carrier substrate; the first electrical chip is arranged on the first optical interconnection, and the first optical interconnection comprises a photonic integrated circuit, wherein the photonic integrated circuit comprises the plurality of optical waveguides and the electro-optical conversion unit; the second electrical chip is disposed on the second optical interconnect, the second optical interconnect including a photonic integrated circuit, the photonic integrated circuit of the second optical interconnect including the photoelectric conversion unit.
In some embodiments, the photonic integrated circuit of the first optical interconnect further comprises a dielectric layer, a first conductive routing cell, a second conductive routing cell; a plurality of optical waveguides in the photonic integrated circuit, the electro-optical conversion unit, and the photoelectric conversion unit are covered with the dielectric layer; the first conductive wiring unit is configured to electrically connect the electro-optical conversion unit to the first electrical chip; the second conductive wiring unit is configured to electrically connect the photoelectric conversion unit to the second electric chip; the first conductive wiring unit comprises a first electrical connection structure penetrating at least part of the dielectric layer; the second conductive wiring unit includes a second electrical connection structure that passes through at least a portion of the dielectric layer.
In some embodiments, the electro-optical conversion unit includes an array of modulators that modulate information carried by the electrical signal of the first electrical chip onto optical signals of different wavelengths and transmit in a wavelength division multiplexed manner; the photoelectric conversion unit includes a detector array that performs wavelength division demultiplexing on the received optical signal and converts it into an electrical signal that is transmitted to the second electrical chip.
In some embodiments, the modulator array comprises a plurality of micro-ring modulators; and/or the detector array comprises a plurality of microring filter detectors.
In some embodiments, the plurality of electrical chips comprises one or more chiplets.
In some embodiments, the first and second electrical chips are mounted during wafer level packaging.
According to an aspect of the present invention, there is provided an optical interconnection device including: a first electrical chip, a second electrical chip; a first optical interconnect; the first electrical chip and the second electrical chip are arranged on the first optical interconnection piece; the first optical interconnect includes a photonic integrated circuit, the photonic integrated circuit comprising: a plurality of optical waveguides; a first electro-optical conversion unit connected with the first electric chip for carrying information carried by an electric signal of the first electric chip into a first optical signal; a first photoelectric conversion unit connected to the second electric chip for converting the first optical signal into an electric signal transmitted to the second electric chip; a second electro-optical conversion unit connected to the second electrical chip for carrying information carried by an electrical signal of the second electrical chip into a second optical signal; and a second photoelectric conversion unit connected to the first electric chip for converting the second optical signal into an electric signal transmitted to the first electric chip; wherein a transmission path of the first optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnect; wherein a transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnect.
In some embodiments, the optical interconnect device further comprises a second optical interconnect, a third electrical chip disposed on the second optical interconnect, and a plurality of optical fibers optically connecting the first optical interconnect and the second optical interconnect; the photonic integrated circuit of the first optical interconnect further comprises a third electro-optical conversion unit connected to the first electrical chip for carrying information carried by the electrical signal of the first electrical chip to a third optical signal; the second optical interconnection comprises a photonic integrated circuit, the photonic integrated circuit of the second optical interconnection comprises a plurality of optical waveguides, and a third photoelectric conversion unit is connected with the third electric chip and is used for converting the third optical signal into an electric signal transmitted to the third electric chip; wherein a transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: an optical waveguide in the first optical interconnect, at least one optical fiber of the plurality of optical fibers, an optical waveguide in the second optical interconnect.
In some embodiments, the photonic integrated circuit of the first optical interconnect further comprises: a dielectric layer, a plurality of conductive wiring units; the dielectric layer covers the plurality of optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, the second photoelectric conversion unit in the photonic integrated circuit of the first optical interconnect; the plurality of conductive wiring units are configured to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, and the second photoelectric conversion unit with corresponding electrical chips; the plurality of conductive routing cells includes a plurality of electrical connection structures, each of the plurality of electrical connection structures each passing through at least a portion of the dielectric layer.
In some embodiments, the first and second electro-optic conversion units each include one or more light modulators, and the first and second photoelectric conversion units each include one or more photodetectors.
In some embodiments, the optical modulator comprises a micro-ring modulator; and/or the photodetector comprises a microring filter detector.
In some embodiments, the first, second, and third electrical chips comprise chiplets therein.
According to an aspect of the present invention, there is provided an optical interconnection device comprising: a first optical interconnect comprising a first photonic integrated circuit comprising a first plurality of electro-optic conversion units, a first plurality of optical waveguides, and a first plurality of photoelectric conversion units; a second optical interconnect comprising a second optical sub-assembly circuit, the second photonic integrated circuit comprising a second plurality of electro-optic conversion units, a second plurality of optical waveguides, and a second plurality of electro-optic conversion units; a first plurality of electrical chips disposed on the first optical interconnect; a second plurality of electrical chips disposed on the second optical interconnect; the first plurality of electro-optical conversion units is configured to: causing each of the first plurality of electrical chips to correspond to at least one electro-optical conversion cell; the first plurality of photoelectric conversion units is configured to: causing each of the first plurality of electrical chips to correspond to at least one photoelectric conversion unit; the first plurality of optical waveguides is configured to: for any two electric chips in the first plurality of electric chips, one photoelectric conversion unit corresponding to one electric chip is optically connected to one photoelectric conversion unit corresponding to the other electric chip, so that any two electric chips in the first plurality of electric chips realize communication.
In some embodiments, the first optical interconnect is optically connected to the second optical interconnect; at least one of the first plurality of electrical chips communicates with at least one of the second plurality of electrical chips through the first optical interconnect and the second optical interconnect.
In some embodiments, the first optical interconnect and the second optical interconnect are optically connected by a plurality of optical fibers or a plurality of optical waveguides such that at least one die of the first plurality of dies communicates with at least one die of the second plurality of dies.
In some embodiments, the first photonic integrated circuit further comprises: a dielectric layer, a plurality of conductive wiring units; the dielectric layer covers the plurality of optical waveguides, the first plurality of electro-optical conversion units, the first plurality of photoelectric conversion units in the first photonic integrated circuit; each of the plurality of conductive wiring units is electrically connected to each of the first plurality of photoelectric conversion units or electrically connected to each of the first plurality of photoelectric conversion units, respectively; the plurality of conductive routing cells includes a plurality of electrical connection structures, each of the plurality of electrical connection structures each passing through at least a portion of the dielectric layer; and the plurality of conductive wiring units are electrically connected to the first plurality of electrical chips to electrically connect each of the first plurality of electro-optical conversion units to a corresponding electrical chip or to electrically connect each of the first plurality of photoelectric conversion units to a corresponding electrical chip.
According to an aspect of the present invention, there is provided a method of manufacturing an optical interconnection device, comprising: providing a wafer; forming a plurality of photonic integrated circuits on the wafer; wherein each of the plurality of light sub-integration circuits may include a plurality of light guides, and an electro-optical conversion unit, a photoelectric conversion unit; mounting at least one electrical chip as required on each of the plurality of photonic integrated circuits; and dividing the wafer to obtain a plurality of independent optical interconnection devices.
The optical interconnection element is used for connecting the electric chips, information on different electric chips is loaded on the light waves, and then the light is shuttled in the optical interconnection element at high speed, so that information interconnection among different chips is completed. Compared with the electric interconnection, the optical interconnection has the advantages of large bandwidth, low time delay, low power consumption, high integration density and strong electromagnetic interference resistance. And on-chip or inter-chip optical interconnects transmit information that is insensitive to distance, allowing more data to be transferred over longer distances, allowing greater flexibility in the design of computing device architectures. Thus, electrical chips connected with optical interconnects can not only maintain the advantages of high yield, low cost, and fast product iteration cycles of electrical chips, but also address the power consumption and bandwidth density bottlenecks of inter-die interconnects. The method can be applied to the artificial intelligent chip to realize higher system energy efficiency ratio.
Compared with the transmission of electric signals through electric wires, the optical waveguide transmission of optical signals can reduce the problems of energy loss, delay, crosstalk and the like, and is beneficial to improving the interconnection performance between chips. The invention provides a solution for the interconnection of chiplets (chiplets), among other things. The physical bottleneck of the chip area can be broken through by replacing a single multifunctional large chip with a plurality of small chips (chiplets), and the chip is an important way for realizing a chip with higher performance. As the area of each die becomes smaller, the number of dies that can be placed on a single wafer increases, thereby improving yield and reducing cost. Meanwhile, the small chip technology is adopted, so that only part of modules can be flexibly upgraded when the system performance is improved, and the iteration cycle of system upgrading can be accelerated. In addition, the optical interconnection element comprises a photonic integrated circuit, has high integration, can be directly applied to interconnection between chips of electric signal input/output, and is beneficial to miniaturization and integration of chip packaging.
Furthermore, the optical interconnection among the optical interconnection elements can also enable the electric chips arranged on different optical interconnection elements to realize optical connection, so that the optical interconnection is not limited to the same optical interconnection element.
In addition, the modulator array adopts a high-efficiency micro-ring modulator array with a small area, and the detector array adopts a micro-ring filter detector with a wave-division multiplexing function, so that a large amount of information transmission can be carried out between electric chips without being limited by power consumption and bandwidth density. By arranging the modulator array and the detector array at the positions of the optical interconnection pieces, a mixed cube network communication interconnection topology structure or other complex interconnection topology structures can be realized by utilizing a plurality of identical electric chips and a plurality of identical optical interconnection pieces, so that a plurality of electric chips can process information in parallel at the same time, and the electric chips are tightly connected with each other in information, so that the requirements of an artificial intelligence algorithm on computing capacity and bandwidth can be better met. Compared with the existing artificial intelligent products, the optical interconnection device of the embodiment of the invention can integrate more computing units (chips) and memory units (chips), and can ensure organic information interconnection between the computing units (chips) by utilizing optical interconnection, thereby providing higher system energy efficiency ratio.
Various aspects, features, advantages, etc. of embodiments of the invention will be described in detail below with reference to the accompanying drawings. The above aspects, features, advantages and the like of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.
Drawings
Fig. 1 is a schematic view showing the structure of an optical interconnection device according to an exemplary embodiment of the present invention.
Fig. 2 is an optical interconnection schematic diagram showing the optical interconnection device shown in fig. 1.
Fig. 3 illustrates the connection topology of the electrical chips in the optical interconnect device shown in fig. 2.
Fig. 4 is a schematic diagram showing the structure of a modulator array in one electro-optical conversion unit according to an embodiment of the present invention.
Fig. 5 is a schematic diagram showing the structure of a detector array in one photoelectric conversion unit, which is an example of the embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view of a related structure in the fabrication of a photonic integrated circuit in accordance with an embodiment of the present application.
FIG. 7 is a schematic cross-sectional view of a related structure in the fabrication of a photonic integrated circuit in accordance with an embodiment of the present application.
FIG. 8 is a schematic cross-sectional view of a related structure in the fabrication of a photonic integrated circuit in accordance with an embodiment of the present application.
Detailed Description
In order to facilitate understanding of the various aspects, features and advantages of the technical solution of the present invention, the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the various embodiments described below are for illustration only and are not intended to limit the scope of the present invention.
The term "comprising" as referred to herein is an open-ended term and should be interpreted to mean "including, but not limited to. By "substantially" is meant that within an acceptable error range, a person skilled in the art is able to solve the technical problem within a certain error range, substantially achieving the technical effect.
Furthermore, the term "coupled" as used herein includes any direct or indirect connection. Thus, if a first device couples to a second device, that connection may be through a direct connection, or through an indirect connection via other devices.
The descriptions of "first," "second," and the like herein are used for distinguishing between different devices, modules, structures, etc., and not for indicating a sequential order, nor are the descriptions of "first" and "second" different types. Furthermore, in some of the flows described in the specification, claims, and drawings of this application, a plurality of operations occurring in a particular order are included, and the operations may be performed out of order or concurrently with respect to the order in which they occur. The sequence numbers of operations such as 101, 102, etc. are merely used to distinguish between the various operations, and the sequence numbers themselves do not represent any order of execution. In addition, the flows may include more or fewer operations, and the operations may be performed sequentially or in parallel.
In one embodiment of the present invention, the optical interconnection device includes a plurality of electrical chips and an optical interconnection through which any two of the plurality of electrical chips are in information interaction, i.e., communication connection. The optical interconnect has a plurality of optical waveguides, for example, the optical interconnect may be implemented using an optical chip. The plurality of electrical chips comprise any first electrical chip and second electrical chip, the optical interconnection device further comprises an electro-optical conversion unit and a photoelectric conversion unit, wherein the electro-optical conversion unit is connected with the first electrical chip and is used for bearing information carried by an electrical signal of the first electrical chip into an optical signal, and the optical signal is transmitted in an optical waveguide of the first optical interconnection piece; the photoelectric conversion unit is connected with the second electric chip and converts the received optical signal into an electric signal transmitted to the second electric chip; and, a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnect. In some embodiments, the optical interconnect includes the electro-optical conversion unit and the photoelectric conversion unit. The electro-optical conversion unit includes a modulator that modulates information carried by an electrical signal of the first electrical chip into an optical signal that is transmitted to the electro-optical conversion unit via an optical waveguide in the optical interconnect, the electro-optical conversion unit converting the optical signal into an electrical signal that is transmitted to the second electrical chip. That is, a transmission path of an optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the optical interconnect.
In another embodiment of the invention, the optical interconnect device comprises a plurality of electrical chips and a plurality of optical interconnects, different ones of which are interconnected via optical fibers, the optical interconnects having an optical coupling structure (e.g., a grating coupler or an end-face coupler) disposed thereon that is coupled to the optical fibers. Any two electrical chips located at or adjacent to the same optical interconnect are connected by signal transmission, i.e., communication, through the optical interconnect, as described above, and will not be described in detail herein. Any two electrical chips located at or adjacent to different optical interconnects are signal-carrying through the respective optical interconnects and optical fibers. Specifically, the plurality of optical interconnects includes a first optical interconnect and a second optical interconnect, each having a plurality of optical waveguides. The plurality of electrical chips includes any first electrical chip located at or adjacent to the first optical interconnect and any second electrical chip located at or adjacent to the second optical interconnect. The first optical interconnection comprises an electro-optical conversion unit connected with the first electric chip, the second optical interconnection comprises an electro-optical conversion unit connected with the second electric chip, wherein the electro-optical conversion unit carries information carried by an electric signal of the first electric chip into an optical signal, the optical signal is transmitted to the optical fiber through an optical waveguide in the first optical interconnection, and is transmitted to the second optical interconnection through the optical fiber, and then is transmitted to the electro-optical conversion unit through an optical waveguide of the second optical interconnection, and the electro-optical conversion unit converts the optical signal into an electric signal, and the electric signal is transmitted to the second electric chip. That is, a transmission path of an optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: and a transmission path passing through the optical waveguide in the first optical interconnection, the optical fiber, and the optical waveguide of the second optical interconnection in sequence.
While the above embodiments have been described in terms of optical signal transmission from a first electrical chip to a second electrical chip, it should be appreciated that optical signal transmission from the second electrical chip to the first electrical chip may also be transmitted in the same manner. That is, for each of the electrical chips, an electro-optical conversion unit and a photoelectric conversion unit for signal transmission with another electrical chip are provided in the corresponding optical interconnect.
The number of the electric chips and the optical interconnections is not particularly limited in the present invention. In some embodiments, 2 or more electrical chips communicate with each other through 1 optical interconnect. In other embodiments, 2 or more electrical chips communicate with each other through 2 or more optical interconnects.
Fig. 1 is a schematic view showing the structure of an optical interconnection device according to an exemplary embodiment of the present invention. In one exemplary embodiment of the present invention, the optical interconnect device includes a carrier substrate 100, optical interconnects 201, 202, and a plurality of electrical chips including electrical chip a, electrical chip B, electrical chip C, electrical chip D, electrical chip E, electrical chip F, electrical chip G, and electrical chip H.
Two optical interconnects, optical interconnect 201 and optical interconnect 202, respectively, are disposed side-by-side on the carrier substrate 100. In some embodiments, the optical interconnect comprises a photonic integrated circuit.
Four electrical chips, electrical chip a, electrical chip B, electrical chip C, and electrical chip D, respectively, are integrated on the optical interconnect 201. Four electrical chips, electrical chip E, electrical chip F, electrical chip G, and electrical chip H, respectively, are integrated on the optical interconnect 202. Any one of the four electrical chips on the same optical interconnect is optically interconnected with the other three electrical chips through the optical interconnect while being optically interconnected with one electrical chip on another optical interconnect. Fig. 2 schematically illustrates an optical interconnect structure of the optical interconnect device, and the locations of the corresponding electrical chips.
In a specific embodiment, the optical interconnect comprises a photonic integrated circuit comprising a plurality of optical waveguides, an electro-optical conversion unit, and a photoelectric conversion unit. In some embodiments, the electro-optic conversion unit includes one or more light modulators, which may constitute a modulator array. The photoelectric conversion unit includes one or more photodetectors, which may constitute a detector array. For example, a modulator may modulate the initial light based on an electrical signal to produce an optical signal bearing information, i.e., to carry information carried by the electrical signal into the optical signal.
In the present exemplary embodiment, a plurality of photoelectric conversion units, each including a modulator array, and a plurality of photoelectric conversion units, each including a detector array, are provided in the photonic integrated circuits of the respective optical interconnects 201, 202, as shown in fig. 2. In an exemplary embodiment, the photonic integrated circuit of the optical interconnect may further comprise a plurality of conductive routing units (not shown in fig. 2), and each modulator array, detector array may be electrically connected to the electrical chip by their corresponding conductive routing units to obtain information-bearing electrical signals from the electrical chip or to send information-bearing electrical signals to the electrical chip.
In some embodiments, as shown in fig. 2, for any one electrical chip, which is correspondingly connected to four modulator arrays (four electro-optical conversion units) and four detector arrays (four photoelectric conversion units) in the optical interconnect, electrical chips (portions to which electrical chips a to H are directed in fig. 2, i.e., electrical chips a to H corresponding to fig. 1) are disposed in corresponding areas on the optical interconnect. Taking electrical chip a as an example, modulator array M1, modulator array M2, modulator array M3, and modulator array M4 are integrated in the optical interconnect, and detector array D1, detector array D2, detector array D3, and detector array D4 are integrated. Wherein the modulator array M1 is in optical communication with the detector array corresponding to the electrical chip F in the optical interconnect 202 through the optical waveguide in the optical interconnect 201, the optical fiber in the coupling optical fiber array, the optical waveguide in the optical interconnect 202, and the detector array D1 is in optical communication with the modulator array corresponding to the electrical chip F on the other optical interconnect 202 through the optical waveguide in the optical interconnect 201, the optical fiber in the coupling optical fiber array, the optical waveguide in the optical interconnect 202; the modulator array M2 is in optical communication with the detector array on the optical interconnect 201 corresponding to the electrical chip B via an optical waveguide in the optical interconnect 201, and the detector array D2 is in optical communication with the modulator array on the optical interconnect 201 corresponding to the electrical chip B via an optical waveguide in the optical interconnect 201; the modulator array M3 is in optical communication with the detector array on the optical interconnect 201 corresponding to the electrical chip C via an optical waveguide in the optical interconnect 201, and the detector array D3 is in optical communication with the modulator array on the optical interconnect 201 corresponding to the electrical chip C via an optical waveguide in the optical interconnect 201; the modulator array M4 is in optical communication with the detector array on the optical interconnect 201 corresponding to the electrical chip D via an optical waveguide in the optical interconnect 201, and the detector array D4 is in optical communication with the modulator array on the optical interconnect 201 corresponding to the electrical chip D via an optical waveguide in the optical interconnect 201.
The optical interconnects 201, 202 may also include optical coupling structures such as grating couplers or facet couplers for coupling the multiple wavelength lasers output by the laser modules into the optical interconnects and equally distributing the laser energy through a series of beam splitters to modulator array input ports under different electrical chips. The beam splitter may be, for example, a broadband beam splitter. Taking electrical chip a as an example, the multiple wavelength lasers output by the laser modules are coupled into optical interconnect 201 by optical coupling structure 300, and the laser energy is equally distributed to optical waveguides in optical interconnect 201, which are respectively in communication with optical modulator array M1, modulator array M2, modulator array M3, and modulator array M4, via a series of beam splitters 400, so that the distributed optical signals are input to the corresponding modulator arrays via the corresponding optical waveguides. In some embodiments, the laser module and associated optical elements may be positioned such that light from the laser module is coupled into an optical waveguide in the optical interconnect. Alternatively, the optical interconnects 201, 202 may be optically connected by a plurality of optical waveguides.
The information on the corresponding electric chips is modulated into optical signals with different wavelengths through each modulator array and is transmitted in a wavelength division multiplexing mode, the modulated optical signals are transmitted to detector arrays below other electric chips through optical waveguides of optical interconnection pieces or optical fibers of additional coupling optical fiber arrays, and the detector arrays perform wavelength division multiplexing on the modulated signals and receive and convert the modulated signals into electric signals, so that information transmission among different electric chips is completed. Taking the electrical chip a as an example, the modulator array M1 loads the information processed and output by the electrical chip a into an optical signal, and the optical signal is sequentially transmitted through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling optical fiber array, and the optical waveguide in the optical interconnection 202, and reaches a detector array below the electrical chip F, where the detector array performs wave-division multiplexing on the received optical signal, and receives and converts the optical signal into an electrical signal, and the electrical signal is input into the electrical chip F and processed by the electrical chip F. The modulator array M2 loads the information output by the electrical chip a processing into an optical signal that is transmitted through the optical waveguide in the optical interconnect 201 to a detector array below the electrical chip B that performs wavelength division multiplexing and reception of the received optical signal into an electrical signal that is input into the electrical chip B for processing by the electrical chip B. The modulator arrays M3 and M4 perform similar processing as the modulator array M2. The detector arrays D1, D2, D4, and D4 also perform processing of wavelength division multiplexing, receiving and converting optical signals transmitted to the electrical chip a into electrical signals, and inputting the electrical signals to the electrical chip a for processing.
In an exemplary embodiment, four electrical chips on each optical interconnect are interconnected by optical signals in close and sub-close proximity, and then optically interconnected with four other electrical chips by a coupling fiber array, ultimately forming a hybrid cube network topology communication interconnect structure, as shown in fig. 3. The hybrid cube network topology multiplexes two optical interconnects and eight electrical chips, improving the system energy efficiency ratio. In some embodiments, the electrical chip may employ a reduced size electrical chip, thereby reducing chip design and processing costs and effectively improving chip yield.
Fig. 4 schematically illustrates an electro-optical conversion unit comprising a modulator array, which in some implementations comprises a plurality of micro-ring modulators. As shown in fig. 4, the modulator array is composed of a series of micro-ring modulators 401, which micro-ring modulators 401 can support high modulation rates based on carrier depletion effects, and this type of waveguide structure is doped in different regions of the ridge waveguide to form a lateral or longitudinal PN junction structure (including a lateral or longitudinal PN junction) 402. The PN junction works in a reverse bias mode, and after reverse bias voltage is applied, the depletion region in the PN junction is increased, and the built-in electric field is enhanced. No free carrier exists in the depletion region, and the refractive index of the corresponding annular waveguide 403 changes, so that the resonant wavelength of the annular waveguide translates, and the intensity of a specific wavelength near the resonant peak changes greatly, thereby achieving the purpose of intensity modulation. The micro-ring modulator has small size, low power consumption and high modulation efficiency. When the electrical data from the electric chip is modulated, the carrier wave with specific wavelength can be corresponding to the heating electrode 404 on the micro-ring modulator, and the modulated optical signals with different wavelengths independently propagate on the optical waveguide 407, so as to realize the multi-channel wavelength division multiplexing signal transmission. Wherein, a plurality of micro-rings can correspond to a plurality of different wavelengths. Whether device performance is being used is detected by the monitor light detectors 405, for example, if the optical interconnect fails, can be analyzed by these monitor light detectors 405. Waveguide termination 406 may be a dummy photodetector that is not coupled to an external electrical chip and that absorbs the residual optical energy at the end of the waveguide so that the transmission of the optical signal by the other optical waveguides is not affected. It should be noted that the term modulator array merely means an array arranged according to a certain position, and the term array is not limited to a specific arrangement form, an arrangement rule, or the like of each modulator, and is not limited to an array in a two-dimensional form on the basis of satisfying a functional requirement.
Fig. 5 illustrates an exemplary photoelectric conversion unit comprising a detector array that, in some embodiments, includes a plurality of micro-ring filter detectors 501, as shown in fig. 5, the micro-ring filter detectors 501 including heating electrodes 502, annular waveguides 503, signal light detectors 504. The ring waveguide 503 is adjusted by adjusting the heating electrode 502 on the micro-ring filter detector 501, optical signals with specific wavelengths are filtered from the optical waveguide 507 and downloaded to the signal light detector 504 coupled with the electrical chip, so as to realize conversion from optical signals to electrical signals. Wherein, a plurality of micro-rings can correspond to a plurality of different wavelengths. The residual light energy at the waveguide end is absorbed by the waveguide terminal 505 connected to the optical waveguide 507 and the signal photodetector 504, so that the residual light energy does not affect the signal transmission of the other optical waveguides. It should be noted that the term detector array merely means an array arranged according to a certain position, and the term array is not limited to a specific arrangement form, an arrangement rule, or the like of each detector, and is not limited to an array in a two-dimensional form on the basis of satisfying the functional requirements.
In some embodiments, the electrical chip of the optical interconnect device may be selected from a CPU, GPU, memory chip, etc., may include digital circuitry, and may also include analog circuitry.
Exemplary embodiments of the present invention provide a method of manufacturing an optical interconnection device, which can be used to manufacture the optical interconnection device in the foregoing embodiments. The method comprises the following steps:
s601, providing a wafer.
S602, forming a plurality of photonic integrated circuits on the wafer.
Wherein each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, and an electro-optical conversion unit, a photoelectric conversion unit, and a plurality of optical waveguides may be used to constitute the optical waveguide unit, that is, the optical waveguide unit includes a plurality of optical waveguides. Each of the plurality of photonic integrated circuits may further include a plurality of conductive wiring units that may connect the electro-optical conversion unit and/or the photoelectric conversion unit to a corresponding electrical chip to receive an electrical signal to be communicated from the electrical chip and/or to transmit an electrical signal for communication to the electrical chip. Typically, a plurality of photonic integrated circuits are formed in a plurality of regions on a wafer, and in a subsequent step, the wafer is diced to form individual photonic integrated circuits that are used to form optical interconnects, i.e., the optical interconnects include the photonic integrated circuits.
S603, mounting at least one required die on each of the plurality of photonic integrated circuits. For example, a first electric chip and a second electric chip are arranged, the first electric chip is electrically connected with the first conductive wiring unit, the second electric chip is electrically connected with the second conductive wiring unit, and a first electric-to-optical conversion unit receives a first electric signal of the first electric chip through the first conductive wiring unit and generates a first optical signal in a coding way; the first photoelectric converter is used for converting a first optical signal into an electric signal and transmitting the electric signal to the second conductive wiring unit.
S604, dividing the wafer to obtain a plurality of independent optical interconnection devices.
In some embodiments, a single photonic integrated circuit and the first and second electrical chips mounted (disposed) on the photonic integrated circuit are included in a single optical interconnect device. Wherein the first electrical chip, the second electrical chip are capable of communicating through the first conductive wiring unit, the first electro-optic conversion unit, at least one of the plurality of optical waveguides, the first photoelectric conversion unit, and the second conductive wiring unit. A separate single optical interconnect device specifically includes one of the optical sub-assemblies.
In S601, the wafer includes a semiconductor layer. In one example, the wafer may be a semiconductor-on-insulator wafer, such as: SOI (Silicon-On-Insulator) wafer. As shown in fig. 6, the semiconductor-on-insulator wafer may include: an insulating layer 602, a semiconductor layer 603 formed on the insulating layer 602, and a backing underlayer 601 located below the insulating layer 602.
In S602, the photonic integrated circuit may be formed by patterning, depositing, doping, or the like on the semiconductor layer 603.
In S603, in an example, the first electrical chip may be electrically connected to the first conductive wiring unit and the second electrical chip may be electrically connected to the second conductive wiring unit by bonding or soldering.
In one embodiment, the step S602 of forming a plurality of photonic integrated circuits on the wafer may be implemented by the following steps:
s21, forming an optical waveguide unit, a first electro-optical conversion unit of the first electro-optical conversion unit and the first photoelectric conversion unit on the wafer.
And S22, depositing a dielectric layer on the wafer with the optical waveguide unit, the first electro-optical conversion unit and the first photoelectric conversion unit so as to cover the optical waveguide unit, the first electro-optical conversion unit, the first photoelectric conversion unit and the wafer.
S23, forming a first opening and a second opening in the dielectric layer.
S24, forming a first electric connection structure in the first opening and forming a second electric connection structure in the second opening.
Wherein the first conductive wiring unit includes the first electrical connection structure; the second conductive wiring unit includes the second electrical connection structure.
As shown in fig. 6 and 7, the semiconductor layer 603 of the wafer may be patterned to obtain the regions corresponding to the optical waveguide unit 103, the first electro-optical conversion unit 104, and the first photoelectric conversion unit 105 as described above in S21. In particular, photolithography and etching techniques are used to remove unwanted material for patterning. In some embodiments, the insulating layer may act as an etch stop layer. In some embodiments, the electro-optical conversion unit includes one or more modulators, which may constitute a modulator array. The photoelectric conversion unit includes one or more photodetectors, which may constitute a detector array. For simplicity, only one modulator, one detector, is shown in fig. 7.
In S22 described above, as shown in fig. 8, a dielectric layer 106 is deposited on the wafer on which the optical waveguide unit 103, the first photoelectric conversion unit 104, and the first photoelectric conversion unit 105 are formed so as to cover the optical waveguide unit 103, the first photoelectric conversion unit 104, the first photoelectric conversion unit 105, and the wafer. Specifically, by deposition, the dielectric layer 106 is formed on the optical waveguide unit 103, the first electro-optical conversion unit 104, the first photoelectric conversion unit 105, and the insulating layer 602. The material of the dielectric layer and the material of the insulating layer may be the same.
In S23, as shown in fig. 8, a first opening and a second opening are formed in the dielectric layer 106. The first openings and the second openings can be formed by etching technology, and the number of the first openings and the second openings can be one or more according to the connection requirement.
In some embodiments, the dielectric layer 106 is a multi-layer structure formed by a plurality of sub-dielectric layers, in which multiple conductive layers may be formed, with the conductive layers being connected by conductive material in the openings. For example, a first sub-dielectric layer is formed by deposition, a first conductive layer is formed, a second sub-dielectric layer is formed by deposition, a second conductive layer is formed, a third sub-dielectric layer is formed, a third conductive layer is formed, and a fourth sub-dielectric layer is formed. Among the first to third conductive layers, different conductive layers are interconnected by conductive materials in the openings, and each conductive layer may be a patterned metal material layer.
In S24 described above, as shown in fig. 8, the first electrical connection structure 101a of the first conductive wiring unit 101 may be formed in the first opening and the second electrical connection structure 102a of the second conductive wiring unit 102 may be formed in the second opening by depositing a conductive material. The first electrical connection structure passes through at least a portion of the dielectric layer 106; the first electrical connection structure passes through at least a portion of the dielectric layer 106.
After depositing the conductive material, the excess conductive material may be removed along the mounting surface of the dielectric layer by a planarization process such as chemical mechanical polishing or mechanical lapping so that the first and second electrical connection structures are flush with the mounting surface of the dielectric layer.
Subsequently, a first electrical chip and a second electrical chip are mounted on each photonic integrated circuit on the wafer, specifically, the first electrical chip and the second electrical chip are mounted on the dielectric layer 106/the mounting surface of the photonic integrated circuit in a region corresponding to each photonic integrated circuit, that is, the region corresponding to each photonic integrated circuit on the dielectric layer 106/the mounting surface of the photonic integrated circuit, and the first electrical chip and the second electrical chip are electrically connected with the first electrical connection structure and the second electrical connection structure in the region.
Subsequently, an encapsulant may also be formed over the dielectric layer 106 to bury or cover the first and second electrical chips. Thereafter, the encapsulant may be cured and may be planarized.
In some embodiments, a process of thinning the backing substrate 601 may be included.
In some embodiments, S604 may be performed after S603, that is, the first and second electrical chips may be batch-mounted before the dicing of the photonic integrated circuit wafer, which may be performed in a wafer-level process to batch package the first and second electrical chips, where only the photonic integrated circuit wafer need be manufactured, without forming the photonic integrated circuits into individual chips.
In addition, alternatively, the wafer dividing process may be performed first to form the independent photonic integrated circuits/the independent optical interconnects including the photonic integrated circuits, and then the mounting process of the first electrical chip and the second electrical chip is performed, that is, the first electrical chip and the second electrical chip are mounted on the independent photonic integrated circuits.
Alternatively, a plurality of individual photonic integrated circuits may be packaged to some extent to form a plurality of individual photonic integrated circuit chips (including bare chips) as the chips for optical interconnection, i.e., the optical interconnection may employ the photonic integrated circuit chips. Specifically, the method comprises the following steps:
s1001, providing a wafer.
S1002, forming a plurality of photonic integrated circuits on the wafer.
Wherein each of the plurality of photonic integrated circuits includes a first conductive wiring unit, a second conductive wiring unit, an optical waveguide unit, and a first electro-optical conversion unit and a first photoelectric conversion unit; the first electro-optical conversion unit and the first photoelectric conversion unit are respectively coupled to the optical waveguide unit; the first conductive wiring unit is electrically connected with the first electro-optical conversion unit; the second conductive wiring unit is electrically connected to the first photoelectric conversion unit.
And S1003, dividing the wafer to obtain a plurality of independent photonic integrated circuits.
Wherein the plurality of photonic integrated circuits are segmented into individual photonic integrated circuits such that each of the photonic integrated circuit chips includes an individual photonic integrated circuit therein.
S1004 mounting a first electrical chip and a second electrical chip on each of the plurality of individual photonic integrated circuit chips such that the first electrical chip is electrically connected to the first conductive routing unit and the second electrical chip is electrically connected to the second conductive routing unit.
As one example, S1004 may be performed after step S1003, but is not limited thereto.
Wherein the first electrical chip, the second electrical chip are capable of communicating through the first conductive wiring unit, the first electro-optical conversion unit, the optical waveguide unit, the first photoelectric conversion unit, and the second conductive wiring unit.
The specific implementation of step S1002 may be referred to the corresponding content in each embodiment, which is not described herein.
In some embodiments, the optical interconnects described hereinabove, such as the first optical interconnect, the photonic integrated circuits in the second optical interconnect, may each be formed using the fabrication steps of the related photonic integrated circuits in the above methods, and at least one electrical chip is disposed on the first optical interconnect and at least one electrical chip is disposed on the second optical interconnect according to the methods mentioned above.
In some embodiments, the method further comprises the step of optically connecting the first optical interconnect with the second optical interconnect using a plurality of optical fibers. Alternatively, the plurality of optical fibers may be replaced with a plurality of optical waveguides for achieving optical connection of the first optical interconnect with the second optical interconnect.
In some embodiments, a method of manufacturing an optical interconnect device includes: the optical interconnects are disposed on a carrier substrate. The first optical interconnection and the second optical interconnection may be disposed on the carrier substrate.
What needs to be explained here is: details of each step in the method provided in the embodiment of the present application may be referred to corresponding details in the above embodiment, which are not described herein. In addition, the method provided in the embodiments of the present application may further include other part or all of the steps in the embodiments, and specific reference may be made to the corresponding content of each embodiment, which is not repeated herein.
It will be appreciated by those skilled in the art that what has been disclosed in the foregoing description is merely illustrative of the invention and, therefore, not to be construed as limiting the scope of the invention, which is defined by the appended claims and their equivalents.
Claims (21)
1. An optical interconnect device, the optical interconnect device comprising:
a plurality of electrical chips including a first electrical chip and a second electrical chip;
a first optical interconnect having a plurality of optical waveguides;
wherein the first electrical chip and the second electrical chip are communicatively connected by an optical waveguide of the first optical interconnect.
2. The optical interconnect device of claim 1 wherein,
the optical interconnect device further includes:
an electro-optical conversion unit connected to the first electrical chip for carrying information carried by an electrical signal of the first electrical chip into an optical signal, the optical signal being transmitted in an optical waveguide of the first optical interconnect;
a photoelectric conversion unit connected to the second electric chip, converting the received optical signal into an electrical signal transmitted to the second electric chip;
wherein a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnect.
3. The optical interconnect device of claim 2, further comprising a carrier substrate;
the first optical interconnect is disposed on the carrier substrate;
The plurality of electrical chips are disposed on the first optical interconnect;
wherein the first optical interconnect comprises a photonic integrated circuit comprising the plurality of optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit.
4. The optical interconnect device of claim 2 wherein,
the optical interconnect device further includes:
a plurality of optical fibers; and
a second optical interconnect having a plurality of optical waveguides, the second optical interconnect being interconnected with the first optical interconnect by the plurality of optical fibers;
wherein a transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: a transmission path sequentially passing through the optical waveguide in the first optical interconnect, at least one of the plurality of optical fibers, and the optical waveguide of the second optical interconnect.
5. The optical interconnect device of claim 4, further comprising a carrier substrate;
the first optical interconnection and the second optical interconnection are arranged on the bearing substrate;
the first electrical chip is arranged on the first optical interconnection piece, and the first optical interconnection piece comprises a photonic integrated circuit which comprises the plurality of optical waveguides and the electro-optical conversion unit;
The second electrical chip is disposed on the second optical interconnect, the second optical interconnect including a photonic integrated circuit, the photonic integrated circuit of the second optical interconnect including the photoelectric conversion unit.
6. The optical interconnect device of claim 3, wherein the photonic integrated circuit of the first optical interconnect further comprises a dielectric layer, a first conductive routing cell, a second conductive routing cell;
a plurality of optical waveguides in the photonic integrated circuit, the electro-optical conversion unit, and the photoelectric conversion unit are covered with the dielectric layer;
the first conductive wiring unit is configured to electrically connect the electro-optical conversion unit to the first electrical chip;
the second conductive wiring unit is configured to electrically connect the photoelectric conversion unit to the second electric chip;
the first conductive wiring unit comprises a first electrical connection structure penetrating at least part of the dielectric layer;
the second conductive wiring unit includes a second electrical connection structure that passes through at least a portion of the dielectric layer.
7. The optical interconnect device of claim 6 wherein,
The electro-optical conversion unit comprises a modulator array, wherein the modulator array modulates information carried by the electric signals of the first electric chip onto optical signals with different wavelengths and transmits the information in a wavelength division multiplexing mode;
the photoelectric conversion unit includes a detector array that performs wavelength division multiplexing on the received optical signal and converts it into an electrical signal that is transmitted to the second electrical chip.
8. The optical interconnect device of any of claims 1, 6-7 wherein the modulator array comprises a plurality of micro-ring modulators; and/or
The detector array includes a plurality of microring filter detectors.
9. The optical interconnect device of claim 8, wherein the plurality of electrical chips comprises one or more chiplets.
10. The optical interconnect device of claim 9 wherein the first and second electrical chips are mounted during wafer level packaging.
11. An optical interconnect device, the optical interconnect device comprising:
a first electrical chip, a second electrical chip;
a first optical interconnect;
the first electric chip and the second electric chip are arranged on the first optical interconnection piece;
the first optical interconnect includes a photonic integrated circuit, the photonic integrated circuit comprising:
A plurality of optical waveguides;
a first electro-optical conversion unit connected with the first electric chip for carrying information carried by an electric signal of the first electric chip into a first optical signal;
a first photoelectric conversion unit connected to the second electric chip for converting the first optical signal into an electric signal transmitted to the second electric chip;
a second electro-optical conversion unit connected to the second electrical chip for carrying information carried by an electrical signal of the second electrical chip into a second optical signal; and
a second photoelectric conversion unit connected to the first electric chip for converting the second optical signal into an electric signal transmitted to the first electric chip;
wherein a transmission path of the first optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnect;
wherein a transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes: at least one of the plurality of optical waveguides in the first optical interconnect.
12. The optical interconnect device of claim 11, further comprising a second optical interconnect, a third electrical chip disposed on the second optical interconnect, and a plurality of optical fibers optically connecting the first optical interconnect and the second optical interconnect;
The photonic integrated circuit of the first optical interconnect further comprises a third electro-optical conversion unit connected to the first electrical chip for carrying information carried by the electrical signal of the first electrical chip to a third optical signal;
the second optical interconnection comprises a photonic integrated circuit, the photonic integrated circuit of the second optical interconnection comprises a plurality of optical waveguides, and a third photoelectric conversion unit is connected with the third electric chip and is used for converting the third optical signal into an electric signal transmitted to the third electric chip;
wherein a transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: an optical waveguide in the first optical interconnect, at least one optical fiber of the plurality of optical fibers, an optical waveguide in the second optical interconnect.
13. The optical interconnect device of claim 11 or 12, wherein the photonic integrated circuit of the first optical interconnect further comprises: a dielectric layer, a plurality of conductive wiring units;
the dielectric layer covers the plurality of optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, the second photoelectric conversion unit in the photonic integrated circuit of the first optical interconnect;
The plurality of conductive wiring units are configured to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, and the second photoelectric conversion unit with corresponding electrical chips;
the plurality of conductive routing cells includes a plurality of electrical connection structures, each of the plurality of electrical connection structures each passing through at least a portion of the dielectric layer.
14. The optical interconnect device of claim 13, wherein the first electro-optic conversion unit and the second electro-optic conversion unit each comprise one or more optical modulators, the first photoelectric conversion unit, and the second photoelectric conversion unit each comprise one or more photodetectors.
15. The optical interconnect device of claim 14 wherein the optical modulator comprises a micro-ring modulator; and/or the photodetector comprises a microring filter detector.
16. The optical interconnect device of claim 14 wherein the first, second, and third electrical chips comprise chiplets therein.
17. An optical interconnect device, comprising:
a first optical interconnect comprising a first photonic integrated circuit comprising a first plurality of electro-optic conversion units, a first plurality of optical waveguides, and a first plurality of photoelectric conversion units;
A second optical interconnect comprising a second photonic integrated circuit comprising a second plurality of electro-optic conversion units, a second plurality of optical waveguides, and a second plurality of photoelectric conversion units;
a first plurality of electrical chips disposed on the first optical interconnect;
a second plurality of electrical chips disposed on the second optical interconnect;
the first plurality of electro-optical conversion units is configured to: causing each of the first plurality of electrical chips to correspond to at least one electro-optical conversion cell;
the first plurality of photoelectric conversion units is configured to: causing each of the first plurality of electrical chips to correspond to at least one photoelectric conversion unit;
the first plurality of optical waveguides is configured to: for any two electric chips in the first plurality of electric chips, one photoelectric conversion unit corresponding to one electric chip is optically connected to one photoelectric conversion unit corresponding to the other electric chip, so that any two electric chips in the first plurality of electric chips realize communication.
18. The optical interconnect device of claim 17, wherein the first optical interconnect is optically connected to the second optical interconnect;
At least one of the first plurality of electrical chips communicates with at least one of the second plurality of electrical chips through the first optical interconnect and the second optical interconnect.
19. The optical interconnect device of claim 18, wherein the first optical interconnect and the second optical interconnect are optically connected by a plurality of optical fibers or a plurality of optical waveguides such that at least one of the first plurality of electrical chips is in communication with at least one of the second plurality of electrical chips.
20. The optical interconnect device of any of claims 18 or 19, the first photonic integrated circuit further comprising: a dielectric layer, a plurality of conductive wiring units;
the dielectric layer covers the plurality of optical waveguides, the first plurality of electro-optical conversion units, the first plurality of photoelectric conversion units in the first photonic integrated circuit;
each of the plurality of conductive wiring units is electrically connected to each of the first plurality of photoelectric conversion units or electrically connected to each of the first plurality of photoelectric conversion units, respectively;
the plurality of conductive routing cells includes a plurality of electrical connection structures, each of the plurality of electrical connection structures each passing through at least a portion of the dielectric layer; and
The plurality of conductive wiring units are electrically connected to the first plurality of electrical chips to electrically connect each of the first plurality of electro-optical conversion units to a corresponding electrical chip or to electrically connect each of the first plurality of photoelectric conversion units to a corresponding electrical chip.
21. The method of manufacturing an optical interconnect device according to any one of claims 1-20, comprising:
providing a wafer;
forming a plurality of photonic integrated circuits on the wafer;
wherein each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, and an electro-optical conversion unit, a photoelectric conversion unit;
mounting at least one electrical chip as required on each of the plurality of photonic integrated circuits;
and dividing the wafer to obtain a plurality of independent optical interconnection devices.
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| PCT/CN2022/138124 WO2023109692A1 (en) | 2021-12-14 | 2022-12-09 | Optical interconnection device and manufacturing method therefor |
| TW111147957A TWI855456B (en) | 2021-12-14 | 2022-12-14 | Optical interconnection device and fabrication method thereof |
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| CN117538984A (en) * | 2024-01-09 | 2024-02-09 | 赛丽科技(苏州)有限公司 | Integrated photon chip, array and testing method thereof |
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| US10114173B2 (en) * | 2017-03-14 | 2018-10-30 | Huawei Technologies Co., Ltd. | Optical device |
| JP7192255B2 (en) * | 2018-05-31 | 2022-12-20 | 富士通オプティカルコンポーネンツ株式会社 | Optical device, optical module using same, and test method for optical device |
| KR102622409B1 (en) * | 2018-10-19 | 2024-01-09 | 삼성전자주식회사 | photonic integrated circuit device and method for manufacturing the same |
| US10962711B2 (en) * | 2018-11-29 | 2021-03-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and manufacturing method thereof |
| CN112558240A (en) * | 2019-09-26 | 2021-03-26 | 台湾积体电路制造股份有限公司 | Package assembly and method of manufacturing the same |
| US11700068B2 (en) * | 2020-05-18 | 2023-07-11 | Ayar Labs, Inc. | Integrated CMOS photonic and electronic WDM communication system using optical frequency comb generators |
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