CN116299856B - Silicon optical coupling structure - Google Patents
Silicon optical coupling structure Download PDFInfo
- Publication number
- CN116299856B CN116299856B CN202310566605.6A CN202310566605A CN116299856B CN 116299856 B CN116299856 B CN 116299856B CN 202310566605 A CN202310566605 A CN 202310566605A CN 116299856 B CN116299856 B CN 116299856B
- Authority
- CN
- China
- Prior art keywords
- layer
- epitaxial
- coupling structure
- optical coupling
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 230000008878 coupling Effects 0.000 title claims abstract description 46
- 238000010168 coupling process Methods 0.000 title claims abstract description 46
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000002131 composite material Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 32
- 238000005253 cladding Methods 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 238000002955 isolation Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000006173 Good's buffer Substances 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- -1 quantum well Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12178—Epitaxial growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention relates to the technical field of semiconductors, and provides a silicon optical coupling structure, which comprises the following components: a substrate (1) is etched in a selected area on the surface to form an epitaxial groove; the epitaxial composite layer (4) grows in the epitaxial groove and comprises a first epitaxial layer (41) and a second epitaxial layer (42), wherein the first epitaxial layer (41) covers the bottom of the epitaxial groove, the second epitaxial layer (42) is positioned in a first preset area of the upper surface of the first epitaxial layer (41), and the area of the first preset area is smaller than or equal to that of the first epitaxial layer (41); and a top waveguide layer (6) disposed on the second epitaxial layer (42) and extending beyond the epitaxial trench. The silicon optical coupling structure has compact volume, high process compatibility and high coupling efficiency, and simultaneously has flexibility and expansibility.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a silicon optical coupling structure.
Background
Silicon-based optoelectronic integration has shown great potential in rapidly growing applications such as high-speed optical interconnects, high-capacity optical communications, and high-precision optical inspection. Since Si belongs to an indirect bandgap semiconductor material and cannot provide an efficient optical gain, it is currently adopted to combine a III-V material with Si, mainly including a bonding scheme and a direct epitaxy scheme. The bonding technology combines the manufactured III-V optoelectronic device or the epitaxial III-V material with the silicon substrate through a bonding process, so that the problem of lattice mismatch between materials can be well solved. However, the technology has the problems of complex process, poor device thermal conductivity, low yield and the like, and is not beneficial to large-scale production. And directly epitaxial high-performance III-V materials on a silicon-based substrate is considered as a final solution for preparing low-power consumption, high-integration and high-density silicon optoelectronic chips by fully utilizing a CMOS (complementary metal oxide semiconductor) process.
The key of the silicon-based direct epitaxial III-V material is to realize the efficient coupling of the III-V optical waveguide and the Si optical waveguide. Because of the mismatch of the III-V material and the Si huge material, the III-V material directly grown on the silicon substrate often has a large thickness (4-5 microns), so that the light-emitting surface of the III-V waveguide and the Si waveguide have a large height difference in the vertical and horizontal directions, and the problems of low coupling efficiency, weak expansibility, high process difficulty and the like of the III-V waveguide and the Si waveguide can be caused in the practical application.
Disclosure of Invention
First, the technical problem to be solved
In view of the above problems, the invention provides a novel silicon optical coupling structure applied to the technical field of semiconductors, so as to solve the problems of low coupling efficiency, weak expansibility, high process difficulty and the like of a III-V optical waveguide and a Si waveguide of a Si-based direct epitaxial III-V material.
(II) technical scheme
The invention provides a silicon optical coupling structure, comprising: etching a substrate in a selected area of the surface of the substrate to form an epitaxial groove; the epitaxial composite layer grows in the epitaxial groove and comprises a first epitaxial layer and a second epitaxial layer, the first epitaxial layer covers the bottom of the epitaxial groove, the second epitaxial layer is located in a first preset area of the upper surface of the first epitaxial layer, and the area of the first preset area is smaller than or equal to that of the first epitaxial layer; and the top waveguide layer is arranged on the second epitaxial layer and extends out of the epitaxial groove.
Further, the silicon optical coupling structure further includes: and the buried layer waveguide layer is grown on the substrate outside the epitaxial groove and has an intersection area with the projection of the top waveguide layer extending out of the epitaxial groove on the substrate.
Further, the buried layer waveguide layer is self-alignedThe method sequentially comprises the following steps: a first buried layer and a second buried layer, wherein the material of the first buried layer is SiO 2 The second buried layer is made of Si or Si 3 N 4 The refractive index of the first buried layer is lower than that of the second buried layer; the second buried layer is grown in a third preset area on the upper surface of the first buried layer, and the area of the third preset area is smaller than or equal to that of the first buried layer.
Further, the substrate is a native substrate of Si or SOI, or the substrate is a composite substrate that is bonded or epitaxially deposited on a native substrate.
Further, the material of the epitaxial composite layer is a III-V compound.
Further, the top waveguide layer is a silicon-based semiconductor material.
Further, the silicon optical coupling structure further includes: the dielectric layer is filled between the inner wall of the epitaxial groove and the side wall of the second epitaxial layer, the height of the dielectric layer is larger than or equal to that of the second epitaxial layer, the dielectric layer covers the surrounding area outside the epitaxial groove, and the upper surface of the dielectric layer is flattened; and the upper dielectric layer covers the top waveguide layer and the dielectric layer.
Further, the silicon optical coupling structure further includes: one end of the first electrode extends out of the upper surface of the upper dielectric layer, and the other end of the first electrode is arranged in the second epitaxial layer; and one end of the second electrode extends out of the upper surface of the upper dielectric layer, and the other end of the second electrode is arranged in the dielectric layer in the epitaxial groove and is in contact with the first epitaxial layer.
Further, the first epitaxial layer sequentially comprises a buffer layer and a lower contact layer from bottom to top; the second epitaxial layer sequentially comprises a lower cladding layer, a gain layer, an upper cladding layer, an upper contact layer and a spacer layer from bottom to top.
Further, the first electrode is in contact with an upper surface of the upper contact layer, and the second electrode is in contact with an upper surface of the lower contact layer.
(III) beneficial effects
According to the silicon optical coupling structure, the coupling structure is manufactured in the vertical direction, so that light can be coupled into the top waveguide layer from the epitaxial composite layer, namely the III-V material waveguide, the influence of height difference caused by different growth speeds at the interface of the selective epitaxial region is avoided, the efficient coupling of light is realized, the structure is compact, the process compatibility is high, and the variety and the flexibility of the photonic device are greatly expanded.
Drawings
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
FIG. 1 schematically illustrates a cross-sectional view of a silicon optical coupling structure provided in accordance with an embodiment of the present invention;
FIG. 2 schematically illustrates another cross-sectional view of a silicon optical coupling structure provided by an embodiment of the present invention;
FIG. 3 schematically illustrates a cross-sectional view of a silicon optical coupling structure along a vertical cross-section provided by an embodiment of the present invention;
FIG. 4 schematically illustrates a cross-sectional view of a silicon optical coupling structure provided by an embodiment of the present invention;
fig. 5 schematically illustrates a schematic optical field distribution diagram of cross sections V1, V2, V3 of a silicon optical coupling structure according to an embodiment of the present invention.
Reference numerals illustrate:
1-a substrate;
2-a first buried layer;
3-a second buried layer;
4-an epitaxial composite layer;
41-a first epitaxial layer (an unetched epitaxial composite layer);
411-buffer layer;
412-a lower contact layer;
42-a second epitaxial layer (etched epitaxial composite layer);
421-lower cladding;
422-gain layer;
423-upper cladding;
424-upper contact layer;
425-spacer layer;
5-a dielectric layer;
51-a first dielectric layer;
52-a second dielectric layer;
a 6-top waveguide layer;
7-an upper dielectric layer;
8-a first electrode;
9-a second electrode.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. The drawings attached hereto are simplified and serve as examples. The shape and dimensions of the structures shown in the drawings may be modified according to the actual situation and the structures may be more complex. Other aspects of the invention may be practiced or carried out in other ways and various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the claims.
An embodiment of the present invention provides a silicon optical coupling structure, and fig. 1 and 2 schematically illustrate cross-sectional views of the silicon optical coupling structure provided by the embodiment of the present invention from different angles, and referring to fig. 1 and 2, the structure mainly includes: a substrate 1; the epitaxial groove is internally provided with an epitaxial composite layer 4 which comprises a first epitaxial layer 41 and a second epitaxial layer 42; a top waveguide layer 6. By manufacturing the coupling structure in the vertical direction of the epitaxial composite layer 4 and the top waveguide layer 6, the high-efficiency coupling of the III-V group optical waveguide and the Si optical waveguide is realized, and the problems of low coupling efficiency, weak expansibility, high process difficulty and the like caused by the direct growth of the III-V group material on the silicon substrate are overcome.
The respective constituent parts of the silicon optical coupling structure of the present embodiment are described in detail below with reference to fig. 1 and 2, respectively.
The substrate 1 with the structure has a wide selection range, and can be a primary substrate of Si or SOI, or a composite substrate formed by bonding or epitaxial deposition on the primary substrate, wherein the thickness of the composite substrate is 500 mu m. The main function of the substrate 1 is to form a heterojunction with a III-V material and participate in conduction, and furthermore, on a proper substrate, other layers such as an epitaxial composite layer 4 can grow the required materials.
Selecting an area of the substrate 1 to etch to form an epitaxial groove, wherein the depth of the epitaxial groove is 0.1 mu m-30 mu m, the shape of the epitaxial groove is polygonal, such as rectangle, and the size of the rectangle can be: the length is 1200 mu m, the width is 400 mu m, materials at the edges of the selected area need to be removed, and the influence of height difference caused by different growth speeds at the selected area interface is avoided.
The epitaxial composite layer 4 with the structure is prepared in an epitaxial groove and is made of III-V group materials, and comprises binary, ternary, quaternary and other multi-element compounds, and can comprise buffer, waveguide, confinement, active, contact, medium and other layers. In general, electrodes are fabricated on epitaxial III-V materials, which, after electrical conduction, provide optical gain, such as lasing, fluorescence, etc., for use in fabricating active devices such as lasers, optical amplifiers, and superluminescent tubes. The epitaxial composite layer 4 comprises a first epitaxial layer 41 and a second epitaxial layer 42, the first epitaxial layer 41 covers the bottom of the epitaxial groove, the second epitaxial layer 42 is located in a first preset area on the upper surface of the first epitaxial layer 41, and the area of the first preset area is smaller than or equal to that of the first epitaxial layer 41. The first epitaxial layer 41 and the second epitaxial layer 42 are obtained by processing an epitaxial composite layer 4, the first epitaxial layer 41 is an unetched part, the optional depth is 0 [ mu ] m-30 [ mu ] m, the second epitaxial layer 42 is an etched part, and the optional depth is 0.3 [ mu ] m-30 [ mu ] m.
A top waveguide layer 6 is formed over the second epitaxial layer 42 and extends beyond the epitaxial groove, the material of the top waveguide layer 6 being a silicon-based semiconductor material, such as Si 3 N 4 Si, etc., the width is optional 0.1 mu m-30 mu m, the thickness is optional 0.05 mu m-1 mu m, and the optical waveguide layer is used for optical field limitation and light propagation.
In some embodiments, as shown with reference to fig. 1 and 2, the silicon optical coupling structure of the present invention further comprises a buried layer waveguide layer. Optionally, a buried waveguide layer is grown on the substrate 1 outside the epitaxial trench, with an intersection area with the projection of the top waveguide layer 6 extending out of the epitaxial trench onto the substrate 1, so that light can be coupled not only from the epitaxial composite layer 4 to the top waveguide layer 6, but also eventually into the buried waveguide layer in the vertical direction. The buried waveguide layer sequentially comprises the following components from bottom to top: a first buried layer 2 and a second buried layer3, the first buried layer 2 is used as a medium, and the material can be SiO 2 The thickness is 0-5 mu m, the refractive index is lower than that of the second buried layer 3, and the optical confinement is mainly realized; the second buried layer 3 is grown on a third predetermined region of the upper surface of the first buried layer 2, the area of the third predetermined region is smaller than or equal to that of the first buried layer 2, and the second buried layer 3 material can be Si or Si 3 N 4 The thickness is 0-5 mu m, and the single-mode transmission is ensured as a transmission waveguide. In particular, the thicknesses of the first buried layer 2 and the second buried layer 3 may be 0 at the same time.
In some embodiments, as shown with reference to fig. 1 and 2, the silicon optical coupling structure of the present invention further comprises a dielectric layer 5 for filling and isolation. Dielectric layer 5 is prepared between the inner wall of the epitaxial trench and the side wall of the second epitaxial layer 42, the height of dielectric layer 5 is greater than or equal to the height of said second epitaxial layer 42, in particular, the thickness of dielectric layer 5 between top waveguide layer 6 and second epitaxial layer 42 may also be 0, dielectric layer 5 may also cover the surrounding area outside said epitaxial trench, be filled on substrate 1 outside the epitaxial trench, and, in the presence of a buried waveguide layer, dielectric layer 5 may also cover. After filling, planarization is needed, so that the upper surface of the dielectric layer 5 has no difference in height, and a flat surface is obtained, thereby overcoming the influence of height difference caused by different growth speeds at the interface in the epitaxial groove. The dielectric layer 5 may comprise a plurality of layers of materials, such as BCB, siO 2 、Al 2 O 3 、Si 3 N 4 SiC, and the like.
In some embodiments, referring to fig. 1 and 2, the silicon optical coupling structure of the present invention further includes an upper dielectric layer 7, where the upper dielectric layer 7 is made of SiO 2 The thickness is 0.01-5 mu m, the top waveguide layer 6 and the dielectric layer 5 are covered, and the upper dielectric layer 7 limits light in the top waveguide layer 6 due to the refractive index difference, and the main function is filling and isolation.
Fig. 3 and 4 schematically illustrate cross-sectional views of a silicon optical coupling structure provided by embodiments of the present invention along vertical and cross-sections, respectively.
In some embodiments, referring to fig. 3 and 4, the silicon optical coupling structure of the present invention further comprises a first electrode 8 and a second electrode 9 for electrical conduction. One end of the first electrode 8 extends out of the upper surface of the upper dielectric layer 7, and the other end is arranged in the second epitaxial layer 42 and communicated with the upper contact layer 424; one end of the second electrode 9 extends out of the upper surface of the upper dielectric layer 7, and the other end of the second electrode is arranged in the dielectric layer 5 in the epitaxial groove and is communicated with the lower contact layer 412.
In some embodiments, referring to fig. 3 and 4, in the silicon optical coupling structure of the present invention, the epitaxial composite layer 4 is a multilayer semiconductor material epitaxial layer, and is prepared in an epitaxial groove, and includes a multilayer multi-component compound, specifically, a buffer layer 411, which may include a GaAs waveguide layer, an InGaAs/InAs superlattice filter layer, and the like, and has a total thickness of 2 μm, and functions to provide good buffer, good interface flatness, and low defect density for subsequent material growth; the lower contact layer 412 is made of GaAs and has a thickness of 300nm, is n-type doped, and plays roles of electrical conduction and electro-optic restriction; the lower cladding 421 is made of AlGaAs and has a thickness of 1500 mu m, and plays roles of electrical conduction and electro-optic restriction; the gain layer 422 can be bulk material, quantum well, quantum dot, etc. made of compound semiconductor, and has a thickness of 400nm, providing optical gain; the upper cladding 423 is made of AlGaAs and has the thickness of 100 mu m, so that the effects of electric conduction and electro-optic restriction are achieved, and the distribution of an optical mode is regulated; the upper contact layer 424 is made of GaAs and has a thickness of 500nm, is doped with p-type, and plays roles of electrical conduction and electro-optic restriction; spacer layer 425 is Al 2 O 3 The thickness is 20nm, and plays a role in isolation and protection.
In some embodiments, referring to fig. 3 and 4, the dielectric layer 5 in the silicon optical coupling structure of the present invention includes a first dielectric layer 51 and a second dielectric layer 52, where the material of the first dielectric layer 51 is Si 3 N 4 Due to Si 3 N 4 Has higher heat conductivity, thereby being beneficial to heat dissipation; the second dielectric layer 52 is made of SiO 2 The thickness is 400nm, and plays a role in isolation.
Fig. 5 shows a schematic diagram of optical field distribution of cross sections V1, V2, V3 of a silicon optical coupling structure according to an embodiment of the present invention.
The optical fields in the waveguide in V1 are commonly distributed in the middle area of the second epitaxial layer 42, the top waveguide layer 6 and the medium layer 5 in the middle of the second epitaxial layer 42, and the optical fields in the waveguide are gradually coupled into the top waveguide layer 6 from the middle to the two side areas of the second epitaxial layer 42; as shown in V2, in the region without the second epitaxial layer 42, the optical field within the waveguide is confined in the top waveguide layer 6; as shown in V3, an optical coupling structure may be fabricated on the top waveguide layer 6 and the buried layer waveguide layer outside the epitaxial groove, so that light in the top waveguide layer 6 is gradually coupled into the buried layer waveguide layer, and finally light from the group III-V waveguide is realized, passes through the top waveguide layer 6 and the dielectric layer 5, and finally enters the second buried layer 3. Wherein, in order to improve the coupling efficiency of the light in the second epitaxial layer 42 and the top waveguide layer 6, the second epitaxial layer 42 may be made into a shuttle-like structure with narrow lateral sides and wide middle; the top waveguide layer 6 may be formed in a combination of a shuttle-like shape and a rectangular shape, widening in the lateral both end regions of the second epitaxial layer 42. In order to achieve mode selection, a grating is prepared in the intermediate overlap region of the top waveguide layer 6 and the second epitaxial layer 42, with a period of 50nm-1 μm.
Further, implementations not shown or described in the drawings or in the text of the specification are all forms known to those of ordinary skill in the art and have not been described in detail. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are merely directions with reference to the drawings, and are not intended to limit the scope of the present invention. Examples of parameters that include particular values may be provided herein, but these parameters need not be exactly equal to the corresponding values, but may approximate the corresponding values within acceptable error margins or design constraints.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (8)
1. A silicon optical coupling structure, comprising:
a substrate (1) is etched in a selected area on the surface to form an epitaxial groove;
the epitaxial composite layer (4) grows in the epitaxial groove, is made of III-V compound and is a multilayer semiconductor material epitaxial layer, and comprises a first epitaxial layer (41) and a second epitaxial layer (42), wherein the first epitaxial layer (41) covers the bottom of the epitaxial groove, a buffer layer (411) and a lower contact layer (412) made of GaAs are sequentially arranged from bottom to top, the second epitaxial layer (42) is positioned in a first preset area on the upper surface of the first epitaxial layer (41), and comprises a lower cladding layer (421) made of AlGaAs, a gain layer (422), an upper cladding layer (423) made of AlGaAs, an upper contact layer (424) made of GaAs and an upper contact layer (412) made of Al from bottom to top 2 O 3 Is smaller than or equal to the area of the first epitaxial layer (41);
and a top waveguide layer (6) disposed on the second epitaxial layer (42) and extending out of the epitaxial groove.
2. The silicon optical coupling structure of claim 1, further comprising:
and a buried layer waveguide layer which is grown on the substrate (1) outside the epitaxial groove and is provided with an intersection area with the projection of the top waveguide layer (6) extending out of the epitaxial groove on the substrate (1).
3. The silicon optical coupling structure of claim 2, wherein the buried layer waveguide layer comprises, in order from bottom to top: a first buried layer (2) and a second buried layer (3), wherein,
the material of the first buried layer (2) is SiO 2 The material of the second buried layer (3) is Si or Si 3 N 4 The refractive index of the first buried layer (2) is lower than that of the second buried layer (3);
the second buried layer (3) is grown in a third predetermined area of the upper surface of the first buried layer (2), and the area of the third predetermined area is smaller than or equal to the area of the first buried layer (2).
4. Silicon optical coupling structure according to claim 1, characterized in that the substrate (1) is a native substrate of Si or SOI, or the substrate (1) is a composite substrate bonded or epitaxially deposited on a native substrate.
5. A silicon optical coupling structure according to claim 1, characterized in that the top waveguide layer (6) is a silicon-based semiconductor material.
6. The silicon optical coupling structure of claim 1, further comprising:
a dielectric layer (5) filled between the inner wall of the epitaxial groove and the side wall of the second epitaxial layer (42), wherein the height of the dielectric layer (5) is greater than or equal to the height of the second epitaxial layer (42), and the dielectric layer (5) is planarized to cover the surrounding area outside the epitaxial groove;
and an upper dielectric layer (7) covering the top waveguide layer (6) and the dielectric layer (5).
7. The silicon optical coupling structure of claim 6, further comprising:
a first electrode (8) having one end extending out of the upper surface of the upper dielectric layer (7) and the other end disposed in the second epitaxial layer (42);
and one end of the second electrode (9) extends out of the upper surface of the upper dielectric layer (7), and the other end of the second electrode is arranged in the dielectric layer (5) in the epitaxial groove and is in contact with the first epitaxial layer (41).
8. The silicon optical coupling structure of claim 7 wherein,
the first electrode (8) is in contact with the upper surface of the upper contact layer (424), and the second electrode (9) is in contact with the upper surface of the lower contact layer (412).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310566605.6A CN116299856B (en) | 2023-05-19 | 2023-05-19 | Silicon optical coupling structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310566605.6A CN116299856B (en) | 2023-05-19 | 2023-05-19 | Silicon optical coupling structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116299856A CN116299856A (en) | 2023-06-23 |
| CN116299856B true CN116299856B (en) | 2023-07-28 |
Family
ID=86827304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310566605.6A Active CN116299856B (en) | 2023-05-19 | 2023-05-19 | Silicon optical coupling structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116299856B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001102668A (en) * | 1999-09-28 | 2001-04-13 | Kyocera Corp | Manufacturing method of semiconductor substrate |
| CN101425659A (en) * | 2007-10-31 | 2009-05-06 | 索尼株式会社 | Semiconductor laser and method for manufacturing the same |
| CN112289847A (en) * | 2019-07-22 | 2021-01-29 | 新时代电力系统有限公司 | Method and system for fabricating vertical fin-based field effect transistors |
| CN114975641A (en) * | 2022-06-30 | 2022-08-30 | 东莞铭普光磁股份有限公司 | Silicon optical coupling ceramic substrate and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283093B (en) * | 2013-07-01 | 2019-07-02 | Imec公司 | Hybrid waveguide laser and method for manufacturing a hybrid waveguide laser |
-
2023
- 2023-05-19 CN CN202310566605.6A patent/CN116299856B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001102668A (en) * | 1999-09-28 | 2001-04-13 | Kyocera Corp | Manufacturing method of semiconductor substrate |
| CN101425659A (en) * | 2007-10-31 | 2009-05-06 | 索尼株式会社 | Semiconductor laser and method for manufacturing the same |
| CN112289847A (en) * | 2019-07-22 | 2021-01-29 | 新时代电力系统有限公司 | Method and system for fabricating vertical fin-based field effect transistors |
| CN114975641A (en) * | 2022-06-30 | 2022-08-30 | 东莞铭普光磁股份有限公司 | Silicon optical coupling ceramic substrate and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 介质辅助键合Ⅲ-Ⅴ/硅基混合集成金属限制激光器;杨跃德;激光与光电子学进展;第51卷(第11期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116299856A (en) | 2023-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109560462B (en) | Silicon-based hybrid integrated laser array and preparation method thereof | |
| CN107069430B (en) | Silicon substrate electrical injection laser and preparation method thereof | |
| CN104283093B (en) | Hybrid waveguide laser and method for manufacturing a hybrid waveguide laser | |
| CN111933742B (en) | Avalanche photodetector and preparation method thereof | |
| TWI491952B (en) | Integrated optical structure comprising an optical isolator | |
| US5521994A (en) | Semiconductor optical waveguide-integrated light-receiving device | |
| CN111769437B (en) | Bragg grating, preparation method thereof and distributed feedback laser | |
| CN108828797B (en) | Silicon-based electro-absorption modulator and preparation method thereof | |
| CN112018211B (en) | Avalanche photodetector and preparation method thereof | |
| CN112152081B (en) | Hybrid integrated resonant cavity laser and preparation method thereof | |
| CN108736314B (en) | Preparation method of electrical injection silicon-based III-V group nano laser array | |
| US20210057874A1 (en) | Method of fabricating an optoelectronic component | |
| US10690852B2 (en) | III-V semiconductor waveguide nanoridge structure | |
| EP3471221B1 (en) | Active-passive waveguide photonic system | |
| CN111987585B (en) | Silicon waveguide output laser | |
| CN116632651A (en) | Silicon-based surface high-order grating laser and preparation method thereof | |
| US10096975B1 (en) | Laterally grown edge emitting laser | |
| CN106229813B (en) | Silicon-based lateral injection laser and preparation method thereof | |
| CN116299856B (en) | Silicon optical coupling structure | |
| US20210020796A1 (en) | Compact electro-optical devices with laterally grown contact layers | |
| EP1719003B1 (en) | Buried heterostructure device fabricated by single step mocvd | |
| CN114336287A (en) | Evanescent wave coupling silicon-based laser based on coplanar electrode configuration and preparation method thereof | |
| CN109638648B (en) | Electric injection silicon-based III-V group edge-emitting nanowire laser and preparation method thereof | |
| CN113097861B (en) | Quantum cascade laser chip and preparation method thereof | |
| JP2003101125A (en) | Waveguide type optical element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |