CN116183661A - Seebeck coefficient test method, device, system and equipment for thermopile device - Google Patents
Seebeck coefficient test method, device, system and equipment for thermopile device Download PDFInfo
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Abstract
The invention relates to a method, a device, a system, computer equipment and storage media for testing the Seebeck coefficient of a thermopile device, wherein the test system comprises an infrared imager, a nanovoltmeter, a heater, a sample stage, a probe and the computer equipment; the sample stage is used for placing a test sample of the thermopile device; the heater is used for heating the test sample; the nanovoltmeter is connected with the probe, and is used for testing the thermoelectric voltage difference of the test sample through the probe, and sending the thermoelectric voltage difference to the computer equipment; the infrared imager is arranged above the sample table and is used for collecting the temperature difference of the test sample and sending the temperature difference to the computer equipment; the computer device is used for calculating the Seebeck coefficient of the thermopile device according to the thermal potential difference and the temperature difference of the test sample. The test system realizes the test of the Seebeck coefficient of the thermopile device, so that the influence of the increase of the galvanic couple size of the thermopile device on the Seebeck coefficient of the thermopile device can be tested by adopting the test system.
Description
Technical Field
The present invention relates to the field of microelectromechanical systems, and in particular, to a method, apparatus, system, computer device, and storage medium for testing seebeck coefficient of a thermopile device.
Background
With the development of MEMS technology of micro-electro-mechanical systems, the heat detector has low cost and microminiaturization, and mass production and application are realized. The thermopile is used as one of the thermal infrared detectors, and has become a research hot spot of MEMS thermal sensor devices due to the advantages of no refrigeration at room temperature, no chopping requirement, low cost, wide response range and the like.
In order to improve the performance of a MEMS thermopile device, a doping process is often used to increase the absolute value of the seebeck coefficient by increasing the carrier/hole concentration of the integrated material, thereby increasing the output voltage of the device to improve the device performance. However, increasing the carrier/hole concentration of the integrated material with the doping process will result in an increase in the galvanic size of the thermopile device. Currently, there is no concern that an increase in the galvanic size of a thermopile device will affect the seebeck coefficient of the device.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a method, a device and a system for testing the Seebeck coefficient of a thermopile device, computer equipment and a storage medium.
In order to solve at least one of the technical problems, an embodiment of the present invention provides a seebeck coefficient test system of a thermopile device, where the test system includes an infrared imager, a nanovoltmeter, a heater, a sample stage, a probe, and a computer device;
the sample stage is used for placing a test sample of the thermopile device;
the heater is used for heating the test sample;
the nanovoltmeter is connected with the probe and used for testing the thermoelectric voltage difference of the test sample through the probe and sending the thermoelectric voltage difference to the computer equipment;
the infrared imager is arranged above the sample table and is used for collecting the temperature difference of the test sample and transmitting the temperature difference to the computer equipment;
the computer device is used for calculating the Seebeck coefficient of the thermopile device according to the thermoelectric potential difference and the temperature difference of the test sample.
Further, the heater is configured to apply heat of a temperature gradient to the test sample in a direction parallel to a length direction of the test sample.
Further, the probes are respectively connected with a first aluminum electrode and a third aluminum electrode of the test sample to measure the thermal potential difference of the test sample.
Further, the thermal potential difference is the difference between the highest voltage and the lowest voltage, and the temperature difference is the difference between the highest temperature and the lowest temperature;
wherein the highest voltage corresponds to the highest temperature, and the lowest voltage corresponds to the lowest temperature.
Further, the computer device is configured to calculate the seebeck coefficient of the thermopile device from the slope of the linear relationship of the thermoelectric voltage difference and the temperature difference of the test sample.
The embodiment of the invention also provides a Seebeck coefficient test method of the thermopile device, which comprises the following steps:
receiving the thermoelectric voltage difference of the test sample sent by the voltmeter;
receiving the temperature difference of the test sample sent by the infrared imager;
calculating the slope of the linear relationship of the thermoelectric voltage difference and the temperature difference of the test sample;
and determining the Seebeck coefficient of the thermopile device according to the slope.
Further, the thermal potential difference is the difference between the highest voltage and the lowest voltage, and the temperature difference is the difference between the highest temperature and the lowest temperature;
wherein the highest voltage corresponds to the highest temperature, and the lowest voltage corresponds to the lowest temperature.
The embodiment of the invention also provides a Seebeck coefficient testing device of the thermopile device, which comprises:
the first receiving module is used for receiving the thermoelectric voltage difference of the test sample sent by the voltmeter;
the second receiving module is used for receiving the temperature difference of the test sample sent by the infrared imager;
the calculation module is used for calculating the thermoelectric voltage difference of the test sample and the slope of the linear relation of the temperature difference;
and the confirmation module is used for determining the Seebeck coefficient of the thermopile device according to the slope.
In addition, the embodiment of the invention also provides computer equipment, which comprises: the system comprises a memory, a processor and an application program stored on the memory and capable of running on the processor, wherein the processor realizes the steps of the method of any embodiment when executing the application program.
In addition, the embodiment of the invention also provides a computer readable storage medium, on which an application program is stored, and when the application program is executed by a processor, the steps of the method of any embodiment are realized.
In an embodiment of the invention, the seebeck coefficient testing system of the thermopile device comprises an infrared imager, a nanovoltmeter, a heater, a sample stage, a probe and computer equipment. The sample stage is used for placing a test sample of the thermopile device; the heater is used for heating the test sample; the nanovoltmeter is connected with the probe, and is used for testing the thermoelectric voltage difference of the test sample through the probe, and sending the thermoelectric voltage difference to the computer equipment; the infrared imager is arranged above the sample table and is used for collecting the temperature difference of the test sample and sending the temperature difference to the computer equipment; the computer device is used for calculating the Seebeck coefficient of the thermopile device according to the thermal potential difference and the temperature difference of the test sample. Therefore, the test of the Seebeck coefficient of the thermopile device is realized, and the influence of the increase of the galvanic size of the thermopile device on the Seebeck coefficient of the thermopile device can be tested by adopting the test system.
Drawings
FIG. 1 is a system schematic diagram of a Seebeck coefficient test system for a thermopile device in an embodiment of the present invention;
FIG. 2 is a schematic top view of a pair of thermocouples in a typical thermopile structure in an embodiment of the present invention;
FIG. 3 is a flow chart of a method for testing the Seebeck coefficient of a thermopile device according to an embodiment of the present invention;
FIG. 4 is a graph showing the actual value versus the theoretical value of the S value of a 10 μm wide Si couple in an embodiment of the present invention;
FIG. 5 is a graph of measured Seebeck coefficient versus width for p-type and n-type Si couples in an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a seebeck coefficient testing apparatus of a thermopile device in an embodiment of the present invention;
fig. 7 is a schematic diagram of the structural composition of a computer device in an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a Seebeck coefficient test system of a thermopile device, which is shown in fig. 1, and comprises an infrared imager 1, a nanovoltmeter 2, a heater 4, a sample stage 5, a probe 7 and computer equipment 8.
Specifically, as shown in fig. 1, a sample stage 5 is used for placing a test sample 6 of a thermopile device; the heater 4 is used for heating the test sample 6; the nanovoltmeter 2 is connected with the probe 7 and tests the thermoelectric voltage difference of the test sample 6 through the probe 7 and sends the thermoelectric voltage difference to the computer device 8; the infrared imager 1 is arranged above the sample stage 5 and is used for collecting the temperature difference of the test sample 6 and sending the temperature difference to the computer equipment 8; the computer device 8 is used to calculate the seebeck coefficient of the thermopile device from the thermal potential difference and the temperature difference of the test sample 6. In an exemplary embodiment, a seebeck coefficient testing system for a thermopile device further includes a power source 3. As shown in fig. 1, a power supply 3 is used to power the heater 4. Wherein the power supply 3 may be a dc power supply.
In one embodiment, the heater 4 is used to apply heat to the test sample 6 in a temperature gradient parallel to the length of the test sample 6.
In one embodiment, the probes 7 are connected to the first and third aluminum electrodes of the test sample 6, respectively, to measure the thermal potential difference of the test sample 6.
In one embodiment, the thermal potential difference is the difference between the highest voltage and the lowest voltage, and the temperature difference is the difference between the highest temperature and the lowest temperature; wherein the highest voltage corresponds to the highest temperature and the lowest voltage corresponds to the lowest temperature.
In an embodiment, the computer device 8 is configured to calculate the seebeck coefficient of the thermopile device from the slope of the linear relationship of the thermal potential difference and the temperature difference of the test sample 6.
Firstly, it is to be noted that: in general, the two components of the electronic portion Se and the phonon drag portion Sph affect the magnitude of the seebeck coefficient. Se comes from carrier diffusion under a temperature gradient, sph is based on momentum transfer of phonon flow to electrons caused by the temperature gradient. Therefore, the reduction of the thermal conductivity and the maintenance of Sph in the seebeck coefficient are very important for the seebeck coefficient. From the sensor application point of view, the output voltage Vout is taken as the sensing output signal, the magnitude of Vout decreasing with decreasing seebeck coefficient. The present invention therefore proposes a method for optimizing the performance of a thermopile by increasing the output voltage of the thermopile device by exploiting the phonon drag effect in the seebeck coefficient.
Specifically, a schematic structural diagram of the test specimen 6 is shown in fig. 2. FIG. 2 is a schematic top view of a pair of thermocouples in a typical thermopile structure, wherein structure 21 is a silicon oxide layer, the substrate is a SOI wafer, structures 22 and 23 are silicon couples, wherein structure 22 is P-type silicon, and the carrier concentration is 3.7X10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Structure 23 is an N-type silicon line with a carrier concentration of 2.1x10 19 cm -3 Three widths W (10 μm,5 μm,1 to 2 μm) were prepared for a single thermocouple wire length l=1 mm, with a thickness of about 30 nm. The structure 24 is an aluminum electrode, and the electrodes (1), (2) and (3) are respectively 3 pins.
As shown in fig. 2, a seebeck coefficient test system for a thermopile device, the test sample 6 of which is a single silicon wire at room temperature. The seebeck coefficient S of the single silicon wire is measured by applying a temperature gradient to the single silicon wire parallel to the length L direction by the heater 4. The temperature difference value Δt, Δt=th-TL is obtained by the infrared imager 1 (e.g., infrared camera) placed above the test sample 6. TH represents the highest temperature, TL represents the lowest temperature.
The nanovoltmeter 2 is connected with a probe 7, and the probe 7 is connected with the aluminum electrode (1) and the aluminum electrode (2) (or connected with the aluminum electrode (2) and the aluminum electrode (3)). Wherein the aluminum electrode (1) is a first aluminum electrode, the aluminum electrode (2) is a second aluminum electrode, and the aluminum electrode (3) is a third aluminum electrode. Thereby overlapping, the thermal potential difference Δv, Δv=vh-VL is measured. VH represents the highest voltage, VL represents the lowest voltage.
The computer device 8 evaluates S, s= - Δv/Δt from the slope of the linear relationship between the measured thermoelectric voltage difference Δv and the temperature difference Δt.
The Seebeck coefficient test system of the thermopile device comprises an infrared imager, a nanovoltmeter, a heater, a sample stage, a probe and computer equipment. The sample stage is used for placing a test sample of the thermopile device; the heater is used for heating the test sample; the nanovoltmeter is connected with the probe, and is used for testing the thermoelectric voltage difference of the test sample through the probe, and sending the thermoelectric voltage difference to the computer equipment; the infrared imager is arranged above the sample table and is used for collecting the temperature difference of the test sample and sending the temperature difference to the computer equipment; the computer device is used for calculating the Seebeck coefficient of the thermopile device according to the thermal potential difference and the temperature difference of the test sample. Therefore, the test of the Seebeck coefficient of the thermopile device is realized, and the influence of the increase of the galvanic size of the thermopile device on the Seebeck coefficient of the thermopile device can be tested by adopting the test system.
The application also provides a Seebeck coefficient test method of the thermopile device, which is applied to the computer equipment 8 shown in FIG. 1. As shown in fig. 3, a seebeck coefficient testing method of a thermopile device includes the steps of:
s302, receiving a thermal potential difference of the test sample sent by the nanovoltmeter.
S304, receiving the temperature difference of the test sample sent by the infrared imager.
In one example, the thermal potential difference is the difference between the highest voltage and the lowest voltage, and the temperature difference is the difference between the highest temperature and the lowest temperature; wherein the highest voltage corresponds to the highest temperature and the lowest voltage corresponds to the lowest temperature.
S306, calculating the slope of the linear relation of the thermal potential difference and the temperature difference of the test sample.
S308, determining the Seebeck coefficient of the thermopile device according to the slope.
Specifically, referring to the Seebeck coefficient test system of a thermopile device described above, the computer apparatus 8 evaluates S based on the slope of the linear relationship between the measured thermoelectric potential difference DeltaV and the temperature difference DeltaT. S= - Δv/Δt. In the output voltage measurement, a pair of probes are connected to a pin aluminum electrode (1) and an aluminum electrode (3), respectively, and an electromotive force between them is measured with a measuring program with a nanovoltmeter 2 under a given temperature gradient.
By the method for testing the Seebeck coefficient of the thermopile device, the Seebeck coefficients of different types of thermopile devices with different widths can be measured. Such as seebeck coefficients for thermopile devices of different widths for p-type and n-type Si-thermocouple silicon lines. And comparing the tested Seebeck coefficient with the theoretical Seebeck coefficient, and adjusting the performance of the thermopile device by adjusting the width of the thermopile device. For example, comparing the tested seebeck coefficient with the theoretical seebeck coefficient, it was determined that the seebeck coefficient of the p-type galvanic silicon wire tends to decrease and approach the Se value as the wire width decreases. Therefore, the width of the p-type thermocouple type silicon wire can be controlled, so that the Seebeck coefficient obtained by the test is equal to the theoretical Seebeck coefficient, and the performance of the p-type thermocouple type silicon wire is optimized.
The seebeck coefficient of the thermopile device affecting the performance of the thermopile device is explained below:
first, the theoretical value S e of the electronic part in the seebeck coefficient S is calculated as follows:
in the above, k B Is the Boltzmann constant, E is the electron charge, E F Is fermi energy and T is absolute temperature.
The parameter integral Kn is defined as follows:
in the above formula, ζ is the fermi energy with respect to the band edge, μ 1 Electron mobility, μ due to acoustic deformation potential scattering imp Is the electron mobility due to the scattering of ionized impurities.
The comparison between the seebeck coefficient measured by the seebeck coefficient test method based on the above-described one thermopile device and the above-described theoretical value S e is shown in fig. 4.
As shown in fig. 4, the actually measured seebeck coefficient S of a 10 μm wide p-type Si thermocouple type silicon wire is higher than the calculated value of Se, whereas in the n-type wire, the influence of Sph on S is small due to the high carrier concentration. It was demonstrated that the phonon resistance in Sph was partially successfully retained in the 10 μm p Si galvanic silicon wire, and thermopile performance could be optimized by controlling the Sph value.
Fig. 5 shows the relationship of the observed seebeck coefficient of p-type and n-type Si galvanic silicon lines as a function of width. As the filament width decreases, the seebeck coefficient of the p-type galvanic silicon line tends to decrease and approach the Se value. However, in an n-type wire, there is no similarity in the Seebeck coefficients. Therefore, the seebeck coefficient variation of the p-type wire is likely to be affected by the phonon resistance contribution, and phonon boundary scattering dominates with a width W smaller than 10 μm. The phonon resistance contribution decreases and therefore the Si galvanic seebeck coefficient values at widths of 1-2 μm and 5 μm decrease.
Therefore, when the p-type doped thermopile device is optimized, the output voltage of the device can be improved by changing the width of a thermocouple and improving the resistance of the Seebeck coefficient phonons, so that the comprehensive performance of the thermopile is improved.
In summary, the invention provides a set of Seebeck coefficient testing method and a testing system thereof, which utilize the traditional doping technology and utilize the influence relation of single couple size to the Seebeck coefficient, thereby improving the output voltage of the thermopile and further improving the performance of devices.
In an embodiment, the invention further provides a Seebeck coefficient testing device of the thermopile device. As shown in fig. 6, the apparatus includes:
the first receiving module 602 is configured to receive a thermal potential difference of the test sample sent by the voltmeter.
And a second receiving module 604, configured to receive the temperature difference of the test sample sent by the infrared imager.
A calculation module 606 for calculating the thermoelectric voltage difference of the test sample and the slope of the linear relationship of the temperature difference.
A validation module 608 determines the seebeck coefficient of the thermopile device based on the slope.
For specific limitations of the seebeck coefficient testing apparatus of a thermopile device, reference may be made to the above limitations of the seebeck coefficient testing method of a thermopile device, and the details thereof will not be repeated here. Each of the modules in the seebeck coefficient testing apparatus of the thermopile device described above may be implemented in whole or in part by software, hardware, and combinations thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
The embodiment of the invention provides a computer readable storage medium, wherein an application program is stored on the computer readable storage medium, and the program is executed by a processor to realize the method for testing the Seebeck coefficient of the thermopile device in any one of the embodiments. The computer readable storage medium includes, but is not limited to, any type of disk including floppy disks, hard disks, optical disks, CD-ROMs, and magneto-optical disks, ROMs (Read-Only memories), RAMs (Random AcceSS Memory, random access memories), EPROMs (EraSable Programmable Read-Only memories), EEPROMs (Electrically EraSable ProgrammableRead-Only memories), flash memories, magnetic cards, or optical cards. That is, a storage device includes any medium that stores or transmits information in a form readable by a device (e.g., computer, cell phone), and may be read-only memory, magnetic or optical disk, etc.
The embodiment of the invention also provides a computer application program which runs on a computer and is used for executing the Seebeck coefficient test method of the thermopile device of any embodiment.
In addition, fig. 7 is a schematic diagram of the structural composition of the computer device in the embodiment of the present invention.
The embodiment of the invention also provides computer equipment, as shown in fig. 7. The computer device comprises a processor 702, a memory 703, an input unit 704, a display unit 705 and the like. It will be appreciated by those skilled in the art that the device architecture shown in fig. 7 does not constitute a limitation of all devices, and may include more or fewer components than shown, or may combine certain components. The memory 703 may be used to store an application program 701 and various functional modules, and the processor 702 runs the application program 701 stored in the memory 703, thereby executing various functional applications of the device and data processing. The memory may be internal memory or external memory, or include both internal memory and external memory. The internal memory may include read-only memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), flash memory, or random access memory. The external memory may include a hard disk, floppy disk, ZIP disk, U-disk, tape, etc. The disclosed memory includes, but is not limited to, these types of memory. The memory disclosed herein is by way of example only and not by way of limitation.
The input unit 704 is used for receiving input of signals and receiving keywords input by a user. The input unit 704 may include a touch panel and other input devices. The touch panel may collect touch operations on or near the user (e.g., the user's operation on or near the touch panel using any suitable object or accessory such as a finger, stylus, etc.), and drive the corresponding connection device according to a preset program; other input devices may include, but are not limited to, one or more of a physical keyboard, function keys (e.g., play control keys, switch keys, etc.), a trackball, mouse, joystick, etc. The display unit 705 may be used to display information input by a user or information provided to the user and various menus of the terminal device. The display unit 705 may take the form of a liquid crystal display, an organic light emitting diode, or the like. The processor 702 is a control center of the terminal device, connects various parts of the entire device using various interfaces and lines, performs various functions and processes data by running or executing software programs and/or modules stored in the memory 703, and invoking data stored in the memory.
As one embodiment, the computer device includes: one or more processors 702, a memory 703, one or more application programs 701, wherein the one or more application programs 701 are stored in the memory 703 and configured to be executed by the one or more processors 702, the one or more application programs 701 configured to perform a method of testing the seebeck coefficient of a thermopile device in any of the above embodiments.
In addition, the foregoing describes in detail the method, apparatus, computer device and storage medium for testing seebeck coefficient of a thermopile device according to the embodiments of the present invention, and specific examples should be adopted herein to illustrate the principles and embodiments of the present invention, where the foregoing examples are only for helping to understand the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (10)
1. A seebeck coefficient test system of a thermopile device, which is characterized by comprising an infrared imager, a nanovoltmeter, a heater, a sample stage, a probe and computer equipment;
the sample stage is used for placing a test sample of the thermopile device;
the heater is used for heating the test sample;
the nanovoltmeter is connected with the probe and used for testing the thermoelectric voltage difference of the test sample through the probe and sending the thermoelectric voltage difference to the computer equipment;
the infrared imager is arranged above the sample table and is used for collecting the temperature difference of the test sample and transmitting the temperature difference to the computer equipment;
the computer device is used for calculating the Seebeck coefficient of the thermopile device according to the thermoelectric potential difference and the temperature difference of the test sample.
2. The test system of claim 1, wherein the heater is configured to apply a temperature gradient of heat to the test sample in a direction parallel to a length of the test sample.
3. The test system of claim 2, wherein the probes are respectively connected to a first aluminum electrode and a third aluminum electrode of the test sample to measure a thermal potential difference of the test sample.
4. The test system of claim 1, wherein the thermal potential difference is a difference between a highest voltage and a lowest voltage, and the temperature difference is a difference between a highest temperature and a lowest temperature;
wherein the highest voltage corresponds to the highest temperature, and the lowest voltage corresponds to the lowest temperature.
5. The test system of claim 4, wherein the computer device is configured to calculate the seebeck coefficient of the thermopile device based on the thermoelectric potential difference of the test sample and the slope of the linear relationship of the temperature difference.
6. A method for testing the seebeck coefficient of a thermopile device, the method comprising:
receiving the thermoelectric voltage difference of the test sample sent by the voltmeter;
receiving the temperature difference of the test sample sent by the infrared imager;
calculating the slope of the linear relationship of the thermoelectric voltage difference and the temperature difference of the test sample;
and determining the Seebeck coefficient of the thermopile device according to the slope.
7. The method of claim 6, wherein the thermal potential difference is the difference between the highest voltage and the lowest voltage, and the temperature difference is the difference between the highest temperature and the lowest temperature;
wherein the highest voltage corresponds to the highest temperature, and the lowest voltage corresponds to the lowest temperature.
8. A seebeck coefficient testing apparatus for a thermopile device, the apparatus comprising:
the first receiving module is used for receiving the thermoelectric voltage difference of the test sample sent by the voltmeter;
the second receiving module is used for receiving the temperature difference of the test sample sent by the infrared imager;
the calculation module is used for calculating the thermoelectric voltage difference of the test sample and the slope of the linear relation of the temperature difference;
and the confirmation module is used for determining the Seebeck coefficient of the thermopile device according to the slope.
9. A computer device comprising a memory, a processor and an application stored on the memory and executable on the processor, wherein the processor implements the steps of the method of any of claims 6 to 7 when the application is executed by the processor.
10. A computer readable storage medium having stored thereon an application program, wherein the application program, when executed by a processor, implements the steps of the method of any of claims 6 to 7.
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| CN202211538179.7A CN116183661A (en) | 2022-12-02 | 2022-12-02 | Seebeck coefficient test method, device, system and equipment for thermopile device |
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| CN202211538179.7A Pending CN116183661A (en) | 2022-12-02 | 2022-12-02 | Seebeck coefficient test method, device, system and equipment for thermopile device |
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2022
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