CN116053926A - On-chip narrow linewidth laser with ultra-long tuning range - Google Patents
On-chip narrow linewidth laser with ultra-long tuning range Download PDFInfo
- Publication number
- CN116053926A CN116053926A CN202310098466.9A CN202310098466A CN116053926A CN 116053926 A CN116053926 A CN 116053926A CN 202310098466 A CN202310098466 A CN 202310098466A CN 116053926 A CN116053926 A CN 116053926A
- Authority
- CN
- China
- Prior art keywords
- micro
- ring
- fsr
- chip
- tuning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 83
- 238000012544 monitoring process Methods 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 12
- 230000003595 spectral effect Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to an on-chip narrow linewidth laser with an ultra-long tuning range, which comprises the following components: two or more semiconductor optical amplifiers, at least one optical switch, at least one optical coupler, at least three micro-ring resonators with tuning electrodes, a plurality of spot-size converters, a Sagnac loop structure, and a monitoring feedback control system: the semiconductor optical amplifiers realize mode field matching coupling into an external cavity based on low-loss silicon, silicon nitride or lithium niobate and other materials through a mode spot converter, each optical path is controlled to be on-off through an optical switch, the optical paths are connected with a micro-ring through an optical coupler, a plurality of micro-rings are cascaded, the last micro-ring is communicated with a Sagnac ring, the straight waveguide ports of each micro-ring are uniformly regulated to the end face of the external cavity, and the micro-rings are output to a monitoring feedback control system through a waveguide array. The invention increases the wavelength tunable range of the gain wave band and the external cavity through the multi-micro-ring and multi-SOA design, and can finish the realization of the ultra-wideband tunable narrow linewidth laser.
Description
Technical Field
The invention relates to the field of semiconductor lasers, in particular to an on-chip narrow linewidth laser with an ultra-long tuning range, which expands the wavelength tunable range of an external cavity through a multi-micro-ring cascade resonant cavity structure, and simultaneously utilizes an optical switch to be connected with a plurality of SOAs so as to expand a gain wave band and finally realize the narrow linewidth laser output with the ultra-long tuning range.
Background
In recent years, with the development of semiconductor lasers, the semiconductor lasers are widely used in the fields of coherent optical communication, coherent optical detection and the like, and have extremely high scientific research prospects and application potential.
At present, most on-chip narrow linewidth laser structures adopt external cavity structures of double rings and single SOA, and the structure has limit to the wavelength tunable range because of considering the side mode rejection ratio; if the number of micro-rings is only increased, on one hand, the sensitivity of the system structure to the environment is increased, and the working stability is affected, and on the other hand, the side-mode suppression ratio and the tuning range can be considered, and the wavelength gain range of the SOA can be limited, so that the tuning range of the current narrow-linewidth laser is limited to be within 100nm, and is generally about 40 nm. While lasers of other structures suffer from either a sacrifice in integrability or an inability to guarantee output linewidth if a wide tuning range is to be met.
In order to solve the problems, the invention adopts the multi-micro-ring resonant cavity structure, and the external cavity can be connected with SOAs of a plurality of gain wave bands through the on-chip integrated optical switch, so that the tunable range is greatly widened. Meanwhile, the laser output linewidth is less influenced under the external cavity formed by the same high-Q-value micro-ring during operation, so that the narrow linewidth output is ensured, and the laser has an extremely wide tunable range. The on-chip integrated tunable narrow linewidth laser is obviously superior to the existing scheme in tunable bandwidth, output linewidth and the like, and can realize continuous wavelength output exceeding 200nm under the 5KHz linewidth.
Disclosure of Invention
The on-chip narrow linewidth laser with the ultra-long tuning range adopts a multi-micro-ring resonant cavity structure, and the external cavity can be connected with SOAs with a plurality of gain wave bands through the on-chip integrated optical switch, so that the on-chip integrated performance of the laser and the output quality of the narrow linewidth are ensured, the tuning range can be greatly widened, and the limit of the on-chip integrated narrow linewidth laser on the continuous wave tuning range at present is solved.
The invention adopts the technical scheme that: an on-chip narrow linewidth laser with an ultra-long tuning range comprises a plurality of SOA semiconductor optical amplifiers 1, a silicon-based external cavity chip, a first monitoring feedback system 6a and a second monitoring feedback system 6b, wherein the silicon-based external cavity chip comprises an optical switch array 2, a phase modulator 3, three or more micro-ring resonant cavities (an add-drop micro-ring 4a with a tuning structure, an add-drop micro-ring 4b with a second tuning structure, an add-drop micro-ring 4c with a third tuning structure, or more add-drop micro-ring structures 4 d) and a Sagnac ring 5; the optical switch array 2 is respectively connected with the plurality of SOA semiconductor optical amplifiers 1 through waveguides, a mode spot converter 201 is adopted at the end face coupling position to enable the waveguides to be matched with the mode field of an SOA emergent light field, and the mode spot converter 201, the optical switch array 2, the phase modulator 3, three or more micro-ring resonant cavities (an add-drop micro-ring 4a with a tuning structure, an add-drop micro-ring 4b with a second tuning structure, an add-drop micro-ring 4c with a third tuning structure or more add-drop micro-ring structures 4 d) and the Sagnac ring 5 are sequentially cascaded through the waveguides; the three or more micro-ring resonators (an Add-Drop micro-ring 4a with a tuning structure, an Add-Drop micro-ring 4b with a second tuning structure, an Add-Drop micro-ring 4c with a third tuning structure, or more Add-Drop micro-ring structures 4 d) adopt Add-Drop structures, and each port of the coupling straight waveguide is coupled into the first monitoring feedback system 6a and the second monitoring feedback system 6b through an optical fiber array.
Further, the micro-ring resonant cavity (the add-drop micro-ring 4a with the tuning structure, the add-drop micro-ring 4b with the tuning structure, the add-drop micro-ring 4c with the tuning structure, or more add-drop micro-ring structures 4 d) is provided with a tuning device, and the tuning modes comprise thermo-optical, electro-optical and piezoelectric tuning modes.
Further, a silicon-based external cavity chip is connected with the plurality of SOA semiconductor optical amplifiers 1, and the tunable range of the laser and the line width of the compressed output laser are greatly widened through the three-ring and above structure in the external cavity.
Further, one port of the last stage micro-ring resonant cavity (the add-drop micro-ring structure 4c with the tuning structure or more) is directly connected through a waveguide to form a Sagnac ring 5, one port is connected with the next stage micro-ring, and the other ports are coupled into the first monitoring feedback system 6a and the second monitoring feedback system 6b through a spot-size converter.
Further, the silicon-based external cavity chip adopts a low-loss silicon, silicon nitride and lithium niobate material process platform of a silicon-based substrate.
Further, when the light source adopts the SOA semiconductor optical amplifier 1, the corresponding coupler adopts a mode spot converter; the mode that the light source is bent by 7-9 degrees near the chip end waveguide is adopted, so that the direction of the output light of the light source is offset by 7-9 degrees from the normal line of the end face of the coupler, and the influence of echo signals of the end face is reduced.
Further, the SOA semiconductor optical amplifier 1 and the silicon-based external cavity chip are bonded in a flip-chip mode.
Further, the free spectral range of each micro-ring resonator (add-drop micro-ring with first tuning structure 4a, add-drop micro-ring with second tuning structure 4b, add-drop micro-ring with third tuning structure 4c, or more add-drop micro-ring structures 4 d) is: fsr=λ 2 /n g L, wherein lambda is the resonant wavelength of the micro-ring modulator, FSR is the wavelength interval between adjacent resonant peaks of the micro-ring modulator, n g The refractive index of the waveguide group of the micro-ring modulator is L, and the circumference of the micro-ring is L; at least three micro-ring resonant cavities have a circumference within 30%.
Further, each micro-ring resonant cavity (the add-drop micro-ring 4a with the tuning structure, the add-drop micro-ring 4b with the tuning structure, the add-drop micro-ring 4c with the tuning structure, or more add-drop micro-ring structures 4 d) adopts a resonant wavelength through vernier effect, and the resonant center wavelength of each micro-ring is shifted through thermal tuning and electric tuning modes, for example, so as to select a wavelength; the maximum wavelength tuning range of the laser depends on the free spectral range of each micro-ring, wherein the maximum tuning range of the three micro-ring structure can be calculated by the formula:
FSR＝FSR 1 ·FSR 2 ·FSR 3 /FSR 1 ·FSR 2 +FSR 2 ·FSR 3 -FSR 1 ·FSR 3 -FSR 2 ·FSR 3
wherein FSR is the wavelength interval between adjacent resonance peaks of micro-ring resonant cavities (an add-drop micro-ring 4a with a tuning structure, an add-drop micro-ring 4b with a tuning structure, an add-drop micro-ring 4c with a tuning structure, or more add-drop micro-ring structures 4 d), FSR 1 ，FSR 2 ，FSR 3 Free spectral ranges, FSR, of three microrings, respectively 1 >FSR 2 >FSR 3 And the wavelength interval is smaller; each micro-ring resonator (add-drop micro-ring 4a with a first tuning structure, add-drop micro-ring 4b with a second tuning structure, add-drop micro-ring 4c with a third tuning structure, or more add-drop micro-ring structures 4 d) has a high Q value to ensure narrow linewidth and single mode output.
The principle of the invention is as follows: the ultra-wide tuning range narrow linewidth laser of the present invention includes three parts: the optical fiber comprises an SOA semiconductor optical amplifier, a planar waveguide external cavity part and a monitoring feedback part. The SOA semiconductor optical amplifier comprises reflective SOAs, transmissive SOAs and the like; the planar waveguide outer cavity part comprises a mode spot converter, an optical switch, a phase tuner, a plurality of micro-rings and a Sagnac ring structure which are sequentially integrated on photon integrated materials such as low-loss silicon, silicon nitride, lithium niobate and the like, and tuning structures including modes of electric tuning, thermal tuning, piezoelectric and the like are loaded on the micro-ring resonant cavity; the monitoring feedback part comprises an optical fiber array, an optical power meter and a relevant feedback control device.
According to the scheme of the narrow linewidth laser with the ultra-wide tuning range, provided by the invention, the tunable range of the laser can be expanded through the vernier effect of multiple microrings, meanwhile, a plurality of SOAs are integrated, each SOA is controlled through an optical switch, so that the gain wave band is increased, finally, continuous wave frequency modulation with the ultra-wide tuning range can be realized, meanwhile, the linewidth of the laser is greatly compressed by utilizing an external cavity structure, and the quality of laser output is ensured.
The specific implementation mode is shown in fig. 1, wherein 1 is an SOA semiconductor optical amplifier, 2 is an optical switch, 3 is a phase tuner, 4a, 4b and 4c are Add-Drop micro-loops with tuning structures, 6a and 6b are a first monitoring feedback system and a second monitoring feedback system, and 201 is a spot-size converter.
The semiconductor optical amplifier comprises an RSOA reflective semiconductor optical amplifier and a general transmission structure SOA, wherein in the laser, a plurality of SOAs with different gain wave bands are used, the gain wave bands of the SOAs are continuous, the end face transmittance is greater than 99.9% on the end face close to an outer cavity through an anti-reflection structure, and meanwhile, the bonding mode with the outer cavity can be direct end face coupling, vertical grating coupling or lens coupling.
The mode spot converter is required to meet the requirement that an SOA emergent light field and a waveguide inner light field are matched in mode, and meanwhile, the influence of an end face echo signal is reduced in a mode of bending 7-9 degrees.
The optical switch part can realize on-off control of more than two paths of optical paths through one or more optical switch arrays, so that the central wavelength of the micro-ring system is matched with an SOA optical amplifier of a corresponding wave band. Fig. 2 illustrates an example of implementing a 1×4 optical switch array, where the optical path is controlled by cascading a plurality of optical switches, and in practical application, a matching optical switch array should be selected according to the number of SOAs coupled.
The phase regulator can be tuned in a plurality of modes such as thermo-optical mode, electro-optical mode, piezoelectric mode and the like, so that laser meets resonance conditions, and finally, lasing output is realized.
The micro-rings have a tunable function, the refractive index or the length of the micro-rings is changed in a thermal, electric and pressure mode to change the central wavelength of a corresponding transmission peak, meanwhile, the FSR phase difference between the micro-rings is small, and the tunable range can be greatly enlarged by utilizing the multi-ring vernier effect, so that the final tunable wave band reaches more than 200 nm; in addition, each micro-ring should have a higher Q value to realize line width compression, and in the working state of a single wavelength mode, output of extremely narrow line width is realized.
Compared with the prior art, the invention has the following advantages:
1. the tunable range of the laser is greatly enlarged and reduced through the multi-ring structure, the tuning range below 100nm is commonly used in the market at present, the tuning range above 200nm can be increased, and the output linewidth in the KHz of the laser can be ensured;
2. according to the invention, the gain wave band is enlarged through the coupling of the plurality of SOAs and the external cavity, so that the output power of emergent laser is ensured;
3. the optical switch is used for controlling the SOA to be matched with the central wavelength of the transmission spectrum of the external cavity, so that the loss is reduced, the space structure is compact, and the integration of devices is facilitated.
Drawings
FIG. 1 is a schematic diagram of an ultra-wide tuning range narrow linewidth external cavity laser of the present invention;
FIG. 2 is a 1×4 optical switch array;
in the figure, 1-multiple SOA semiconductor optical amplifiers, 2-optical switch arrays, 3-phase tuners, 4 a-add-drop micro-loops with first tuning structures, 4 b-add-drop micro-loops with second tuning structures, 4 c-add-drop micro-loops with third tuning structures, 4 d-or more add-drop micro-loop structures, 5-Sagnac loops, 6 a-first optical power monitoring systems, 6 b-second optical power monitoring systems, 7 a-first y-branch 1 x 2 type optical switches, 7 b-second y-branch 1 x 2 type optical switches, 7 c-third y-branch 1 x 2 type optical switches, 201-spot-size converters.
Detailed Description
The invention is further described below with reference to the drawings and detailed description.
An embodiment of an on-chip narrow linewidth laser with an ultra-long tuning range according to the present invention is shown in fig. 1, and includes: a plurality of SOA semiconductor optical amplifiers 1, an optical switch array 2, a phase tuner 3, an add-drop micro-ring with tuning structure (first add-drop micro-ring with tuning structure 4a, second add-drop micro-ring with tuning structure 4b, third add-drop micro-ring with tuning structure 4 c), or more micro-ring structures 4d, sagnac rings 5, optical power monitoring systems (first optical power monitoring system 6a, second optical power monitoring system 6 b), a spot-size converter 201.
The SOA semiconductor optical amplifier 1 comprises an RSOA reflective semiconductor optical amplifier and a general transmission structure SOA, in the laser, a plurality of SOAs with different gain bands are used, each SOA gain band is continuous, the end face transmittance is greater than 99.9% on the end face close to the outer cavity through an anti-reflection structure, and meanwhile, the bonding mode with the outer cavity can be direct end face coupling, vertical grating coupling or lens coupling. When the SOA is coupled with the external cavity, a matched mode spot converter is designed, the mode spot converter needs to meet the requirement that the emergent light field of the SOA is matched with the light field in the waveguide, and meanwhile, the influence of the echo signals of the end face is reduced in a mode of bending 7-9 degrees.
The optical switch array 2 can realize on-off control of more than two paths of optical paths through one or more optical switch arrays, so that the central wavelength of the micro-ring system is matched with an SOA optical amplifier of a corresponding wave band. Fig. 2 illustrates an example of implementing a 1×4 optical switch array, including a first y-branch 1×2 optical switch 7a, a second y-branch 1×2 optical switch 7b, and a third y-branch 1×2 optical switch 7c, where the optical paths are controlled by cascading a plurality of optical switches, and in practical application, a matched optical switch array should be selected according to the number of SOAs coupled.
The phase regulator 3 can be tuned in various modes such as thermo-optical, electro-optical, piezoelectric and the like, so that laser meets resonance conditions, and finally, lasing output is realized.
The add-drop micro-ring with tuning structure (the add-drop micro-ring 4a with tuning structure, the add-drop micro-ring 4b with tuning structure, the add-drop micro-ring 4c with tuning structure) or more add-drop micro-ring structures 4d with tuning structure should have tunable functions, and the refractive index or length of the micro-ring is changed by means of heat, electricity, pressure and the like so as to realize the change of the central wavelength of the corresponding transmission peak, meanwhile, the FSR phase difference between the micro-rings is smaller, the tunable range can be greatly enlarged by utilizing the vernier effect of multiple rings, and the final tunable wave band reaches more than 200 nm; in addition, each micro-ring should have a higher Q value to realize line width compression, and in the working state of a single wavelength mode, output of extremely narrow line width is realized.
The first optical power monitoring system 6a and the second optical power monitoring system 6b are mainly coupled to an optical power monitoring device or a frequency monitoring device through an optical fiber array, and because the optical intensity coupled to the first optical power monitoring system 6a and the second optical power monitoring system 6b is very small in a normal working state, when the optical intensity is monitored to be increased, the central wavelength of the micro-ring system is indicated to deviate, the side mode rejection ratio of the micro-ring system is reduced, and output laser is weakened or even vanished, so that the optical intensity of each port monitored by the first optical power monitoring system 6a and the second optical power monitoring system 6b is returned to the minimum by changing the refractive index of the micro-ring waveguide, and the laser is restored to normal operation by feeding back to the add-drop micro-ring 4a with a tuning structure and the add-drop micro-ring 4b with a tuning structure or the add-drop micro-ring 4c with a third tuning structure corresponding to the corresponding waveguide.
Claims (9)
1. An on-chip narrow linewidth laser with an ultra-long tuning range, which is characterized in that: the semiconductor optical amplifier comprises a plurality of SOA semiconductor optical amplifiers (1), a silicon-based external cavity chip, a first monitoring feedback system (6 a) and a second monitoring feedback system (6 b), wherein the silicon-based external cavity chip comprises an optical switch array (2), a phase modulator (3), three or more micro-ring resonant cavities and a Sagnac ring (5); the optical switch array (2) is respectively connected with the plurality of SOA semiconductor optical amplifiers (1) through waveguides, mode field matching is carried out at end face coupling positions by adopting a mode spot converter (201), and the optical switch array (2), the phase modulator (3), three or more micro-ring resonant cavities and the Sagnac ring (5) are sequentially cascaded through waveguides; the three or more micro-ring resonant cavities adopt an Add-Drop structure, and each port of the coupling straight waveguide is coupled into a first monitoring feedback system (6 a) and a second monitoring feedback system (6 b) through an optical fiber array.
2. An on-chip narrow linewidth laser of ultra long tuning range as recited in claim 1 wherein: the micro-ring resonant cavity is provided with a tuning device, and the tuning modes comprise a thermo-optical tuning mode, an electro-optical tuning mode and a piezoelectric tuning mode.
3. An on-chip narrow linewidth laser of ultra long tuning range as recited in claim 2 wherein: a silicon-based external cavity chip is connected with a plurality of SOA semiconductor optical amplifiers (1), and the tunable range of the laser and the line width of compressed output laser are greatly widened through a tricyclic structure and the above structure in the external cavity.
4. An on-chip narrow linewidth laser of ultra long tuning range as in claim 3 wherein: one port of the last-stage micro-ring resonant cavity is directly connected through a waveguide to form a Sagnac ring (5) structure, one port is connected with the next-stage micro-ring, and the other ports are coupled into a first monitoring feedback system (6 a) and a second monitoring feedback system (6 b) through a mode spot converter.
5. An on-chip narrow linewidth laser of ultra long tuning range as defined in claim 4 wherein: the silicon-based external cavity chip adopts a low-loss silicon, silicon nitride and lithium niobate material process platform of a silicon-based substrate.
6. An on-chip narrow linewidth laser of ultra long tuning range as defined in claim 5 wherein: when the light source adopts an SOA semiconductor optical amplifier (1), a corresponding coupler adopts a mode spot converter (201); the mode that the light source is bent by 7-9 degrees near the chip end waveguide is adopted, so that the direction of the output light of the light source is offset by 7-9 degrees from the normal line of the end face of the coupler, and the influence of echo signals of the end face is reduced.
7. An on-chip narrow linewidth laser of ultra long tuning range as recited in claim 6 wherein: the SOA semiconductor optical amplifier (1) is bonded with the silicon-based external cavity chip in a flip-chip mode.
8. An on-chip narrow linewidth laser of ultra long tuning range as recited in claim 7 wherein: the free spectral range of each micro-ring resonant cavity is as follows: fsr=λ 2 /n g L, wherein lambda is the resonant wavelength of the micro-ring modulator, FSR is the wavelength interval between adjacent resonant peaks of the micro-ring modulator, n g Is the refractive index of the waveguide group of the micro-ring modulator, L is the circumference of the micro-ringThe method comprises the steps of carrying out a first treatment on the surface of the At least three micro-ring resonant cavities have a circumference within 30%.
9. An on-chip narrow linewidth laser of ultra long tuning range as recited in claim 8 wherein: each micro-ring resonant cavity adopts resonant wavelength through vernier effect, and the resonant center wavelength of each micro-ring is moved through a thermal tuning mode and an electric tuning mode, so as to select wavelength; the maximum wavelength tuning range of the laser depends on the free spectral range of each micro-ring, wherein the maximum tuning range of the three micro-ring structure can be calculated by the formula:
FSR＝FSR 1 ·FSR 2 ·FSR 3 /FSR 1 ·FSR 2 +FSR 2 ·FSR 3 -FSR 1 ·FSR 3 -FSR 2 ·FSR 3
wherein FSR is the wavelength interval of adjacent resonance peaks of the micro-ring resonant cavity, and FSR 1 ，FSR 2 ，FSR 3 Free spectral ranges, FSR, of three microrings, respectively 1 >FSR 2 >FSR 3 And the wavelength interval is smaller; each micro-ring resonant cavity has a high Q value to ensure narrow linewidth and single mode output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310098466.9A CN116053926A (en) | 2023-02-10 | 2023-02-10 | On-chip narrow linewidth laser with ultra-long tuning range |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310098466.9A CN116053926A (en) | 2023-02-10 | 2023-02-10 | On-chip narrow linewidth laser with ultra-long tuning range |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116053926A true CN116053926A (en) | 2023-05-02 |
Family
ID=86120483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310098466.9A Pending CN116053926A (en) | 2023-02-10 | 2023-02-10 | On-chip narrow linewidth laser with ultra-long tuning range |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116053926A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116908814A (en) * | 2023-09-12 | 2023-10-20 | 深圳市速腾聚创科技有限公司 | Laser radar and mobile device |
| CN118554257A (en) * | 2024-07-24 | 2024-08-27 | 中国科学院半导体研究所 | Nonvolatile C+L band narrow linewidth tunable laser |
-
2023
- 2023-02-10 CN CN202310098466.9A patent/CN116053926A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116908814A (en) * | 2023-09-12 | 2023-10-20 | 深圳市速腾聚创科技有限公司 | Laser radar and mobile device |
| CN116908814B (en) * | 2023-09-12 | 2024-01-16 | 深圳市速腾聚创科技有限公司 | Laser radar and mobile device |
| CN118554257A (en) * | 2024-07-24 | 2024-08-27 | 中国科学院半导体研究所 | Nonvolatile C+L band narrow linewidth tunable laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106785882B (en) | High-power double-port output silicon-based tunable external cavity laser | |
| CA2361527C (en) | Opto-electronic oscillators having optical resonators | |
| US8094359B1 (en) | Electro-optic whispering-gallery-mode resonator devices | |
| CN116053926A (en) | On-chip narrow linewidth laser with ultra-long tuning range | |
| US20050128566A1 (en) | Tunable optical filters having electro-optic whispering-gallery-mode resonators | |
| US20090154505A1 (en) | Wavelength tunable laser diode using double coupled ring resonator | |
| CN111736370A (en) | Thin-film lithium niobate-based integrated chip and preparation method thereof | |
| US20160049767A1 (en) | Low Noise, High Power, Multiple-Microresonator Based Laser | |
| US20050175358A1 (en) | Tunable radio frequency and microwave photonic filters | |
| US20230268718A1 (en) | Silicon-based tunable filter, tunable laser and optical module | |
| EP2210318A2 (en) | Cross modulation-based opto-electronic oscillator with tunable electro-optic optical whispering gallery mode resonator | |
| CN114024193B (en) | High-speed linear frequency modulation external cavity laser based on film lithium niobate | |
| US20140254617A1 (en) | Tunable laser diode device with amzi-fp filter | |
| CA2696066A1 (en) | Photonic filtering of electrical signals | |
| CN113937617B (en) | Multi-wavelength laser | |
| JP2010087472A (en) | Variable-wavelength laser light source, and method for driving the same | |
| CN115267974A (en) | Narrow-band tunable microwave photon filter based on Brillouin fiber laser | |
| CN110908146A (en) | Silicon-based integrated tunable band-pass filter | |
| CN113809634A (en) | Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide | |
| CN111736368A (en) | Reconfigurable microwave photon filter based on fiber grating | |
| CN111342342A (en) | III-V/silicon-based end-face coupled external cavity laser integrated with Michelson interferometer and double-pass amplifier | |
| JP3003205B2 (en) | Tunable filter | |
| CN115498505B (en) | Wavelength-adjustable laser and laser external cavity | |
| CN115621841A (en) | External cavity laser and tuning method thereof | |
| CN113991275A (en) | Fully-reconfigurable silicon-based Fano resonator chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |