CN115985580B - Silver nanowire transparent conductive film and preparation method and application thereof - Google Patents
Silver nanowire transparent conductive film and preparation method and application thereof Download PDFInfo
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Abstract
The invention relates to a silver nanowire transparent conductive film, a preparation method and application thereof. The preparation method comprises the following steps: depositing an oxide layer on the surface of the metal substrate by a magnetron sputtering method to obtain a first composite layer, wherein the oxide layer is selected from a silicon dioxide layer or a zinc oxide layer; performing hot isostatic pressing treatment on the first composite layer to obtain a second composite layer; arranging an organic silicon release film on the surface of the oxide layer of the second composite layer, and removing the metal substrate to obtain a third composite layer; providing a transparent conductive layer, wherein the transparent conductive layer comprises a transparent substrate and a silver nanowire layer which are stacked, transferring a third composite layer to the surface of the silver nanowire layer, and stripping an organosilicon release film to obtain a pretreated conductive film; and carrying out cold isostatic pressing treatment on the pretreated conductive film to obtain the silver nanowire transparent conductive film. The preparation method can obviously improve the reliability of the silver nanowire transparent conductive film and ensure that the silver nanowire transparent conductive film has high transmittance.
Description
Technical Field
The invention relates to the technical field of transparent conductive films, in particular to a silver nanowire transparent conductive film, a preparation method and application thereof.
Background
The silver nanowire transparent conductive film has the advantages of excellent photoelectric performance, simple preparation process, easiness in realizing large-area film formation, flexibility, low price and the like, is an optimal substitute product of an Indium Tin Oxide (ITO) film, and can be widely applied to the fields of touch control, display, photovoltaics, defrosting and demisting glass, electromagnetic interference prevention transparent windows and the like. When the transparent conductive film of silver nanowire is used in the heating field, the requirements on the thermal stability and the chemical stability of the transparent conductive film are high, and a protective layer needs to be deposited on the surface of the transparent conductive film to prevent oxidation of the silver nanowire and surface atomic diffusion.
The protection layer prepared by adopting the traditional wet process such as spin coating, spray coating or coating has poor compactness, and the water permeability and oxygen permeability are difficult to reach 10 -4 The order of magnitude of (2) is that the performance of the transparent conductive film of the silver nanowire is extremely easy to lose efficacy and the reliability is poor when the transparent conductive film is electrified and heated. And the uniformity of the film prepared by the wet process is difficult to control, and the excessive thickness of the film not only can influence the heating performance of the silver nanowire transparent conductive film, but also can reduce the transmittance of the silver nanowire transparent conductive film.
Disclosure of Invention
Based on this, it is necessary to provide a silver nanowire transparent conductive film, a preparation method and application thereof, in view of the above problems; the preparation method can obviously improve the reliability of the silver nanowire transparent conductive film, and simultaneously ensures that the silver nanowire transparent conductive film has high transmittance.
A preparation method of a silver nanowire transparent conductive film comprises the following steps:
depositing an oxide layer on the surface of a metal substrate by a magnetron sputtering method to obtain a first composite layer, wherein the oxide layer is selected from a silicon dioxide layer or a zinc oxide layer;
performing hot isostatic pressing treatment on the first composite layer to obtain a second composite layer;
arranging an organic silicon release film on the surface of the oxide layer of the second composite layer, and removing the metal substrate to obtain a third composite layer;
providing a transparent conductive layer, wherein the transparent conductive layer comprises a transparent substrate and a silver nanowire layer which are stacked, transferring the third composite layer to the surface of the silver nanowire layer of the transparent conductive layer, and stripping the organosilicon release film to obtain a pretreated conductive film;
and performing cold isostatic pressing treatment on the pretreated conductive film to obtain the silver nanowire transparent conductive film.
In one embodiment, in the step of depositing an oxide layer on the surface of the metal substrate by using a magnetron sputtering method, the thickness of the oxide layer is 30 μm to 60 μm.
In one embodiment, the hot isostatic pressing treatment is performed at a temperature of 1000-1200 ℃, a pressure of 100-200 MPa, and a time of 1-2 h.
In one embodiment, in the step of disposing the silicone release film on the surface of the oxide layer of the second composite layer, the manner of disposing the silicone release film is selected from press bonding, and the pressure of the press bonding is 10MPa-15MPa.
In one embodiment, the pressure of the press fit is 10MPa to 15MPa.
In one embodiment, the method of removing the metal substrate is selected from wet etching.
In one embodiment, the transparent conductive layer is obtained by depositing a mixed solution of a silane coupling agent and silver nanowires on any surface of the transparent substrate.
In one embodiment, the mass ratio of the silane coupling agent to the silver nanowires in the mixed solution is 1:10-1:15.
In one embodiment, the cold isostatic pressing is performed at a pressure of 100MPa to 200MPa for a time of 10min to 15min.
The silver nanowire transparent conductive film prepared by the preparation method of the silver nanowire transparent conductive film comprises a transparent substrate, and a silver nanowire layer and an oxide protective layer which are sequentially laminated on the surface of the transparent substrate.
The application of the silver nanowire transparent conductive film in a camera window.
According to the preparation method, a silicon dioxide layer or a zinc oxide layer is deposited by a magnetron sputtering method, then hot isostatic pressing is carried out, so that the silicon dioxide layer or the zinc oxide layer can be subjected to crystal transformation, molecular rearrangement is realized, and the uniform and tight adhesion of each part between the silver nanowire layer and the oxide protective layer is ensured by utilizing a liquid pressure medium in cold isostatic pressing. On one hand, by utilizing the synergistic effect of magnetron sputtering deposition and a hot isostatic pressing process, a tightly arranged crystal structure can be obtained, and air holes are discharged, so that the compactness of an oxide protective layer is obviously improved, and the cold isostatic pressing treatment can effectively prevent the side surface of water vapor from being immersed, so that the reliability of the silver nanowire transparent conductive film is obviously improved; on the other hand, the silicon dioxide layer or the zinc oxide layer after the crystal transformation has high transmittance as an oxide protective layer, and meanwhile, the cold isostatic pressing treatment is beneficial to improving the uniformity of the silver nanowire transparent conductive film, so that the silver nanowire transparent conductive film can keep high transmittance. Therefore, the camera window of the silver nanowire transparent conductive film prepared by the method is better in reliability, and the camera window can be better applied to environments with high humidity, extremely low temperature and the like.
Drawings
Fig. 1 is a schematic flow chart of a method for preparing a transparent conductive film with silver nanowires according to an embodiment of the invention.
10, a first composite layer; 20. a second composite layer; 30. a third composite layer; 40. a transparent conductive layer; 50. a silver nanowire transparent conductive film; 501. a transparent substrate; 502. a silver nanowire layer; 503. and an oxide protective layer.
Detailed Description
The present invention will be described in more detail below in order to facilitate understanding of the present invention. It should be understood, however, that the invention may be embodied in many different forms and is not limited to the implementations or embodiments described herein. Rather, these embodiments or examples are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments or examples only and is not intended to be limiting of the invention.
Referring to fig. 1, the method for preparing the silver nanowire transparent conductive film 50 provided by the invention comprises the following steps:
s1, depositing an oxide layer on the surface of a metal substrate by a magnetron sputtering method to obtain a first composite layer 10, wherein the oxide layer is selected from a silicon dioxide layer or a zinc oxide layer;
s2, performing hot isostatic pressing treatment on the first composite layer 10 to obtain a second composite layer 20;
s3, arranging an organic silicon release film on the surface of the oxide layer of the second composite layer 20, and removing the metal substrate to obtain a third composite layer 30;
s4, providing a transparent conductive layer 40, wherein the transparent conductive layer 40 comprises a transparent substrate 501 and a silver nanowire layer 502 which are stacked, transferring the third composite layer 30 to the surface of the silver nanowire layer 502 of the transparent conductive layer 40, and stripping the organosilicon release film to obtain a pretreated conductive film;
and S5, performing cold isostatic pressing treatment on the pretreated conductive film to obtain the silver nanowire transparent conductive film 50.
According to the invention, a silicon dioxide layer or a zinc oxide layer is deposited by a magnetron sputtering method, and then the silicon dioxide layer or the zinc oxide layer is subjected to molecular rearrangement by a hot isostatic pressing process, so that the amorphous structure is converted into a tightly arranged crystal structure, and meanwhile, air holes are discharged, so that on one hand, the compactness of the oxide protection layer 503 can be remarkably improved; on the other hand, the silicon oxide layer or zinc oxide layer after the crystal transformation has a high transmittance as the oxide protective layer 503, which is advantageous in that the silver nanowire transparent conductive film 50 can maintain a high transmittance.
In step S1, the oxide layer has a thickness of 30 μm to 60 μm, preferably 40 μm to 50 μm, which is advantageous for sufficiently discharging pores during molecular rearrangement while maintaining high transmittance.
In order to deposit a high quality oxide layer on a metal substrate by magnetron sputtering, the metal substrate may be subjected to ultrasonic cleaning prior to the preparation of the oxide layer by magnetron sputtering.
Specifically, the present invention is not limited to the choice of metal substrate, including but not limited to, titanium substrate or iron substrate, preferably titanium substrate or iron substrate.
To further ensure that the silica layer or zinc oxide layer is sufficiently crystalline to enable a crystal transformation, it is preferred that the temperature of the hot isostatic pressing treatment in step S2 is in the range 1000 ℃ to 1200 ℃, preferably 1000 ℃ to 1100 ℃; the pressure is 100MPa to 200MPa, preferably 120MPa to 180MPa; the time is 1h-2h, preferably 1h-1.5h.
In step S3, an organosilicon release film is disposed on the surface of the oxide layer of the second composite layer 20, so that the oxide layer can be conveniently transferred and compounded in the subsequent preparation process.
In order to enable the silicone release film to be tightly bonded to the oxide layer surface of the second composite layer 20 while also facilitating peeling during the subsequent production, preferably, in the step of providing the silicone release film on the oxide layer surface of the second composite layer 20, the manner in which the silicone release film is provided is selected from press bonding, and more preferably, the press bonding pressure is 10MPa to 15MPa.
In particular, the invention is not limited to the selection of silicone release films, including but not limited to Polydimethylsiloxane (PDMS) films, preferably PDMS films.
In view of the difference between the materials of the layers in the second composite layer 20 and the combined three-layer structure of the silicone release film, in order to sufficiently remove the metal substrate without damaging the oxide layer and the silicone release film of the second composite layer 20, the method of removing the metal substrate is preferably wet etching.
In particular, the wet etching may be selected from hydrochloric acid etching or nitric acid etching.
In step S4, in order to further improve the bonding effect between the silver nanowire layer 502 and the third composite layer 30 and reduce the interlayer stress, the transparent conductive layer 40 is obtained by depositing a mixed solution of a silane coupling agent and silver nanowires on any surface of the transparent substrate, and the silane coupling agent is used to modify the surface of the silver nanowires, so that chemical bonding between the silver nanowire layer 502 and the third composite layer 30 is facilitated.
Preferably, in the mixed solution, the mass ratio of the silane coupling agent to the silver nanowires is 1:10-1:15.
The deposition process of the silver nanowire layer 502 is not limited in the present invention, and includes, but is not limited to, spray deposition, spin-on deposition, coating deposition, electrostatic adsorption deposition, or chemical bonding deposition.
Specifically, the invention is not limited to the selection of the silane coupling agent, and the silane coupling agent includes but is not limited to at least one of 3- (2, 3-glycidoxy) propyl trimethoxysilane, gamma-ureidopropyl triethoxysilane and methacryloxy silane, preferably at least one of 3- (2, 3-glycidoxy) propyl trimethoxysilane, gamma-ureidopropyl triethoxysilane and methacryloxy silane.
The specific choice of the transparent substrate 501 is not limited by the present invention, and the transparent substrate 501 includes, but is not limited to, at least one of a poly (arylene ether nitrile) (PEN) substrate, a polyethylene terephthalate (PET) substrate, a polymethyl methacrylate (PMMA) substrate, preferably a PEN substrate, a PET substrate, or a PMMA substrate.
In step S5, the liquid pressure medium in the cold isostatic pressing is used to uniformly and tightly attach each part between the silver nanowire layer 502 and the oxide layer, so that on one hand, the side surface of the water vapor is effectively prevented from being immersed, and the reliability of the silver nanowire transparent conductive film 50 is further improved; on the other hand, the uniformity of the silver nanowire transparent conductive film 50 is improved, so that the silver nanowire transparent conductive film 50 maintains high transmittance.
Meanwhile, the pressure applied to the silver nanowire layer 502 in the cold isostatic pressing process is also beneficial to reducing the node resistance of silver nanowires in the silver nanowire layer 502, so that the sheet resistance of the silver nanowire transparent conductive film 50 is reduced, and the reliability and the heating performance of the silver nanowire transparent conductive film 50 are further improved.
Preferably, the pressure of the cold isostatic pressing treatment is 100MPa-200MPa, and the time is 10min-15min.
The invention also provides the silver nanowire transparent conductive film 50 prepared by the preparation method of the silver nanowire transparent conductive film, wherein the silver nanowire transparent conductive film 50 comprises a transparent substrate 501, and a silver nanowire layer 502 and an oxide protective layer 503 which are sequentially laminated on the surface of the transparent substrate 501.
The silver nanowire transparent conductive film 50 has higher light transmittance, lower sheet resistance, excellent compactness, no limitation of conditions such as humidity and oxygen content in use environment, excellent reliability and wide application in various different severe use environments.
The invention also provides application of the silver nanowire transparent conductive film 50 in a camera window.
The silver nanowire transparent conductive film 50 is used for a camera window, can achieve excellent defogging and defrosting effects, and solves the problems of unclear shot images and the like caused by fog and frosting of the window; in addition, the silver nanowire transparent conductive film 50 has excellent reliability, so that the reliability of a camera window using the silver nanowire transparent conductive film 50 is better, and the camera window can be better applied to environments with high humidity, extremely low temperature and the like.
Hereinafter, the silver nanowire transparent conductive film, and the preparation method and application thereof will be further described by the following specific examples.
Example 1
And respectively cleaning the titanium substrate with acetone and ethanol for 15min under an ultrasonic state, naturally drying, and then depositing a silicon dioxide layer with the thickness of 30 mu m on the surface of the cleaned titanium substrate by magnetron sputtering to obtain a first composite layer.
And placing the first composite layer in hot isostatic pressing equipment, regulating the temperature to 1100 ℃, applying the pressure to 100MPa, and continuing for 1h to obtain a second composite layer.
And (3) pressing and attaching the polydimethylsiloxane film to the surface of the silicon dioxide layer of the second composite layer under the condition of applying pressure of 10MPa, and then soaking the polydimethylsiloxane film in hydrochloric acid until the metal substrate is completely etched, so as to obtain a third composite layer.
Dispersing silver nanowires by using methacryloxy silane, depositing a mixed solution of the methacryloxy silane and the silver nanowires in a mass ratio of 1:10 on the surface of a polyethylene terephthalate substrate by a spraying process to obtain a silver nanowire conducting layer, transferring a third composite layer to the surface of the silver nanowire conducting layer, and stripping a polydimethylsiloxane film to obtain the pretreated conducting film.
And (3) carrying out cold isostatic pressing treatment on the pretreated conductive film for 10min under the condition of 100MPa applied pressure to obtain the silver nanowire transparent conductive film.
Example 2
And respectively cleaning the titanium substrate with acetone and ethanol for 15min under an ultrasonic state, naturally drying, and then depositing a zinc oxide layer with the thickness of 40 mu m on the surface of the cleaned titanium substrate by magnetron sputtering to obtain a first composite layer.
And placing the first composite layer in hot isostatic pressing equipment, regulating the temperature to 1150 ℃, applying the pressure to 140MPa, and lasting for 1.5h to obtain a second composite layer.
And (3) pressing and attaching the polydimethylsiloxane film to the surface of the zinc oxide layer of the second composite layer under the condition of applying pressure of 12MPa, and then soaking the zinc oxide layer in hydrochloric acid until the metal substrate is completely etched, so as to obtain a third composite layer.
Dispersing silver nanowires by using methacryloxy silane, depositing a mixed solution of the methacryloxy silane and the silver nanowires in a mass ratio of 1:12 on the surface of a polyethylene terephthalate substrate by a spin coating process to obtain a silver nanowire conducting layer, transferring a third composite layer onto the surface of the silver nanowire conducting layer, and stripping a polydimethylsiloxane film to obtain the pretreated conducting film.
And (3) carrying out cold isostatic pressing treatment on the pretreated conductive film for 10min under the condition of applying pressure of 135MPa to obtain the silver nanowire transparent conductive film.
Example 3
And respectively cleaning the titanium substrate with acetone and ethanol for 15min under an ultrasonic state, naturally drying, and then depositing a silicon dioxide layer with the thickness of 50 mu m on the surface of the cleaned titanium substrate by magnetron sputtering to obtain a first composite layer.
And placing the first composite layer in hot isostatic pressing equipment, regulating the temperature to 1200 ℃, applying the pressure to 180MPa, and lasting for 1.5h to obtain a second composite layer.
And (3) pressing and attaching the polydimethylsiloxane film to the surface of the silicon dioxide layer of the first composite layer under the condition of applying pressure of 14MPa, and then soaking the polydimethylsiloxane film in hydrochloric acid until the metal substrate is completely etched, so as to obtain a third composite layer.
Dispersing silver nanowires by adopting gamma-ureidopropyl triethoxysilane, depositing mixed liquid of the gamma-ureidopropyl triethoxysilane and the silver nanowires with the mass ratio of 1:15 on the surface of a polyethylene terephthalate substrate by a spraying process to obtain a silver nanowire conducting layer, transferring a third composite layer onto the surface of the silver nanowire conducting layer, stripping a polydimethylsiloxane film, and obtaining the pretreated conducting film.
And (3) carrying out cold isostatic pressing treatment on the pretreated conductive film for 15min under the condition of applying pressure of 170MPa to obtain the silver nanowire transparent conductive film.
Example 4
And respectively cleaning the titanium substrate with acetone and ethanol for 15min under an ultrasonic state, naturally drying, and then depositing a zinc oxide layer with the thickness of 60 mu m on the surface of the cleaned titanium substrate by magnetron sputtering to obtain a first composite layer.
And placing the first composite layer in hot isostatic pressing equipment, regulating the temperature to 1000 ℃, applying the pressure to 200MPa, and continuing for 2 hours to obtain a second composite layer.
And (3) pressing and attaching the polydimethylsiloxane film to the surface of the zinc oxide layer of the second composite layer under the condition of applying pressure of 15MPa, and then soaking the zinc oxide layer in hydrochloric acid until the metal substrate is completely etched, so as to obtain a third composite layer.
Dispersing silver nanowires by adopting 3- (2, 3-epoxypropoxy) propyl trimethoxy silane, depositing a mixed solution of the 3- (2, 3-epoxypropoxy) propyl trimethoxy silane and the silver nanowires with the mass ratio of 1:15 on the surface of a polyethylene terephthalate substrate through a spraying process to obtain a silver nanowire conducting layer, transferring a third composite layer to the surface of the silver nanowire conducting layer, stripping a polydimethylsiloxane film, and obtaining the pretreated conducting film.
And (3) carrying out cold isostatic pressing treatment on the pretreated conductive film for 12min under the condition of applying pressure of 200MPa to obtain the silver nanowire transparent conductive film.
Example 5
Example 5 differs from example 1 in that a silicon dioxide layer having a thickness of 28 μm was deposited on the surface of the cleaned titanium substrate.
Example 6
Example 6 differs from example 1 in that a silicon dioxide layer having a thickness of 65 μm was deposited on the surface of the cleaned titanium substrate.
Comparative example 1
And (3) dispersing silver nanowires by using methacryloxy silane, and depositing a mixed solution of the methacryloxy silane and the silver nanowires on the surface of the polyethylene terephthalate substrate by a spraying process to obtain the silver nanowire conductive layer.
And depositing a silicon dioxide layer with the thickness of 30 mu m on the surface of the silver nanowire conductive layer by magnetron sputtering to obtain the silver nanowire transparent conductive film as a protective layer.
Comparative example 2
And (3) dispersing silver nanowires by using methacryloxy silane, and depositing a mixed solution of the methacryloxy silane and the silver nanowires on the surface of the polyethylene terephthalate substrate by a spraying process to obtain the silver nanowire conductive layer.
And depositing a silicon dioxide layer with the thickness of 30 mu m on the surface of the silver nanowire conductive layer through a spraying process to obtain the silver nanowire transparent conductive film as a protective layer.
Comparative example 3
And respectively cleaning the titanium substrate with acetone and ethanol for 15min under an ultrasonic state, naturally drying, and then depositing a silicon dioxide layer with the thickness of 30 mu m on the surface of the cleaned titanium substrate by magnetron sputtering to obtain a first composite layer.
And continuously pressing the first composite layer for 1h under the condition of 100MPa of applied pressure to obtain a second composite layer.
And (3) pressing and attaching the polydimethylsiloxane film to the surface of the silicon dioxide layer of the second composite layer under the condition of applying pressure of 10MPa, and then soaking the polydimethylsiloxane film in hydrochloric acid until the metal substrate is completely etched, so as to obtain a third composite layer.
Dispersing silver nanowires by using methacryloxy silane, depositing a mixed solution of the methacryloxy silane and the silver nanowires in a mass ratio of 1:10 on the surface of a polyethylene terephthalate substrate by a spraying process to obtain a silver nanowire conducting layer, transferring a third composite layer to the surface of the silver nanowire conducting layer, and stripping a polydimethylsiloxane film to obtain the pretreated conducting film.
And (3) carrying out cold isostatic pressing treatment on the pretreated conductive film for 10min under the condition of 100MPa applied pressure to obtain the silver nanowire transparent conductive film.
Comparative example 4
And respectively cleaning the titanium substrate with acetone and ethanol for 15min under an ultrasonic state, naturally drying, and then depositing a silicon dioxide layer with the thickness of 30 mu m on the surface of the cleaned titanium substrate by magnetron sputtering to obtain a first composite layer.
And heating the first composite layer at 1100 ℃ for 1h to obtain a second composite layer.
And (3) pressing and attaching the polydimethylsiloxane film to the surface of the silicon dioxide layer of the second composite layer under the condition of applying pressure of 10MPa, and then soaking the polydimethylsiloxane film in hydrochloric acid until the metal substrate is completely etched, so as to obtain a third composite layer.
Dispersing silver nanowires by using methacryloxy silane, depositing a mixed solution of the methacryloxy silane and the silver nanowires in a mass ratio of 1:10 on the surface of a polyethylene terephthalate substrate by a spraying process to obtain a silver nanowire conducting layer, transferring a third composite layer to the surface of the silver nanowire conducting layer, and stripping a polydimethylsiloxane film to obtain the pretreated conducting film.
And (3) carrying out cold isostatic pressing treatment on the pretreated conductive film for 10min under the condition of 100MPa applied pressure to obtain the silver nanowire transparent conductive film.
Comparative example 5
Comparative example 5 is different from example 1 in that a silicon oxide layer having a thickness of 30 μm was deposited on the surface of the cleaned titanium substrate by Atomic Layer Deposition (ALD) instead of magnetron sputtering.
Comparative example 6
Comparative example 6 is different from example 1 in that an alumina layer having a thickness of 30 μm was deposited on the surface of the cleaned titanium substrate.
The silver nanowire transparent conductive films prepared in examples 1 to 6 and comparative examples 1 to 6 were respectively subjected to light transmittance, water permeability, oxygen permeability and sheet resistance performance tests, and the test results are shown in table 1.
As can be seen from Table 1, the silver nanowire transparent conductive films prepared in examples 1-6 have higher light transmittance and lower sheet resistance, and the water permeability and oxygen permeability reach 10 -4 On the order of magnitude of (2). The silver nanowire transparent conductive films prepared in comparative examples 1-6 have lower light transmittance and sheet resistance than those prepared in examples 1-6, and the water permeability and oxygen permeability are up to only 10 -3 On the order of magnitude of (2).
Application examples
The silver nanowire transparent conductive films prepared in example 1 to example 6 and comparative example 1 to comparative example 6 were used for camera windows, respectively, and reliability tests were performed as samples 1 to 12: the duration of time for sample 1-12 to maintain the heating performance was measured at an ambient set temperature of 85 c, a humidity of 85% and an input voltage of 12V. The test results are shown in Table 2.
As is clear from Table 2, samples 1 to 6 were able to operate stably at a temperature of 85℃and a humidity of 85% and were able to operate for a period of up to 559 hours or more. And the working time of the samples 7-12 at the temperature of 85 ℃ and the humidity of 85% is the lowest only about 2 hours. Therefore, the preparation method provided by the invention can obviously improve the reliability of the silver nanowire transparent conductive film, so that the silver nanowire transparent conductive film can be applied to a camera window, and can still maintain an excellent heating effect in a working environment with high humidity and high oxygen content.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The preparation method of the silver nanowire transparent conductive film is characterized by comprising the following steps of:
depositing an oxide layer on the surface of a metal substrate by a magnetron sputtering method to obtain a first composite layer, wherein the oxide layer is selected from a silicon dioxide layer or a zinc oxide layer;
performing hot isostatic pressing treatment on the first composite layer to obtain a second composite layer;
arranging an organic silicon release film on the surface of the oxide layer of the second composite layer, and removing the metal substrate to obtain a third composite layer;
providing a transparent conductive layer, wherein the transparent conductive layer comprises a transparent substrate and a silver nanowire layer which are stacked, transferring the third composite layer to the surface of the silver nanowire layer of the transparent conductive layer, and stripping the organosilicon release film to obtain a pretreated conductive film;
and performing cold isostatic pressing treatment on the pretreated conductive film to obtain the silver nanowire transparent conductive film.
2. The method for preparing a transparent conductive thin film of silver nanowires as claimed in claim 1, wherein in the step of depositing an oxide layer on the surface of the metal substrate by magnetron sputtering, the thickness of the oxide layer is 30 μm to 60 μm.
3. The method for preparing a transparent conductive thin film of silver nanowires according to claim 1, wherein the hot isostatic pressing treatment is performed at a temperature of 1000 ℃ to 1200 ℃, a pressure of 100MPa to 200MPa, and a time of 1h to 2h.
4. The method for preparing a transparent conductive film of silver nanowires according to claim 1, wherein in the step of providing an organosilicon release film on the surface of the oxide layer of the second composite layer, the manner of providing the organosilicon release film is selected from press bonding, and the pressure of the press bonding is 10MPa-15MPa.
5. The method of claim 1, wherein the method of removing the metal substrate is selected from the group consisting of wet etching.
6. The method for preparing a transparent conductive film of silver nanowires according to claim 1, wherein the transparent conductive layer is obtained by depositing a mixture of a silane coupling agent and silver nanowires on any surface of a transparent substrate.
7. The method for preparing a transparent conductive film of silver nanowires according to claim 6, wherein the mass ratio of the silane coupling agent to the silver nanowires in the mixed solution is 1:10-1:15.
8. The method for preparing a transparent conductive thin film of silver nanowires according to claim 1, wherein the cold isostatic pressure is 100MPa to 200MPa for 10min to 15min.
9. A silver nanowire transparent conductive film prepared by the preparation method of the silver nanowire transparent conductive film according to any one of claims 1 to 8, characterized by comprising a transparent substrate, and a silver nanowire layer and an oxide protective layer which are sequentially laminated on the surface of the transparent substrate.
10. Use of the transparent conductive silver nanowire film of claim 9 in a camera window.
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