CN115910886B - Transmission cavity, semiconductor device and wafer transmission method - Google Patents
Transmission cavity, semiconductor device and wafer transmission method Download PDFInfo
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- CN115910886B CN115910886B CN202211700113.3A CN202211700113A CN115910886B CN 115910886 B CN115910886 B CN 115910886B CN 202211700113 A CN202211700113 A CN 202211700113A CN 115910886 B CN115910886 B CN 115910886B
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000007789 sealing Methods 0.000 claims abstract description 76
- 235000012431 wafers Nutrition 0.000 claims description 163
- 238000006243 chemical reaction Methods 0.000 claims description 63
- 230000007246 mechanism Effects 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 29
- 238000007599 discharging Methods 0.000 claims description 10
- 238000011068 loading method Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 14
- 239000002245 particle Substances 0.000 abstract description 11
- 230000003749 cleanliness Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application discloses a transmission cavity, semiconductor equipment and a wafer transmission method; the transmission cavity is used for transferring the wafer from the first cavity to the second cavity; the transmission cavity comprises: a cavity; the manipulator is movably arranged in the cavity and is provided with a first standby position and a second standby position, and the first standby position is close to the first cavity; the second standby position is close to the second chamber; wherein, under the condition that the manipulator bears the wafer: when the first sealing valve is opened, the manipulator is positioned at a second waiting position; when the second sealing valve is opened, the manipulator is positioned at the first standby position. In the transmission cavity disclosed by the application, the cavity to which the wafer is transmitted in the first cavity and the second cavity is a target cavity; under the condition that the wafer is borne on the manipulator, when the sealing valve between the target cavity and the transmission cavity is opened, the manipulator is located on the standby position far away from the target cavity, so that dust and particles in the target cavity are prevented from unavoidably drifting and adhering to the surface of the wafer, and the surface quality of the wafer is effectively ensured.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and more particularly, to a transfer chamber, a semiconductor device having the transfer chamber, and a wafer transfer method suitable for the semiconductor device.
Background
Silicon carbide (SiC) materials are third generation wide bandgap semiconductor materials that follow the first generation semiconductor materials silicon (Si) and second generation semiconductors (GaAs). The silicon carbide crystal structure has the characteristic of homogeneous polytype, and the basic structure is a Si-C tetrahedral structure, and belongs to a close-packed structure. The silicon carbide wafer has excellent performances such as high forbidden bandwidth, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed and the like, and has great prospect in the fields of semiconductor illumination, new energy vehicles, power electronic devices, lasers, detectors and the like.
The good clean environment in the wafer transfer process is an important link for guaranteeing the surface quality of the wafer. Wafers are transferred between different chambers through the transfer chamber, and gas isolation is performed between adjacent chambers through the sealing valve. Because dust is inevitably generated in the first chamber and the second chamber, and the traditional transmission chamber is provided with only one centrally arranged waiting position, the distance between the traditional transmission chamber and the first chamber is smaller; when a wafer is transferred from one chamber to the other chamber, namely the target chamber, along with the opening and closing of the sealing valve between the transfer chamber and the target chamber, environmental differences are generated, so that dust and particles in the target chamber inevitably fly and adhere to the surface of the wafer at the standby position of the transfer chamber, and the surface quality of the wafer is affected.
In view of this, the present application provides a transfer chamber, and the present application also provides a semiconductor device having the transfer chamber, and the present application also provides a wafer transfer method suitable for the semiconductor device, which solves the problem that when a wafer is transferred to a target chamber through the transfer chamber, dust and particles in the target chamber inevitably drift and adhere to the surface of the wafer due to opening and closing of a sealing valve.
In order to achieve the above purpose, the present application provides the following technical solutions:
a transfer chamber for transferring a wafer from a first chamber to a second chamber; a first sealing valve is arranged between the transmission cavity and the first cavity; a second sealing valve is arranged between the transmission cavity and the second cavity; the transmission cavity comprises:
a cavity;
the manipulator is movably arranged in the cavity and is provided with a first standby position and a second standby position, and the first standby position is close to the first cavity; the second standby position is close to the second chamber;
wherein, under the condition that the manipulator bears the wafer: when the first sealing valve is opened, the manipulator is positioned at the second waiting position; when the second sealing valve is opened, the manipulator is located at the first standby position.
Optionally, in the foregoing transport chamber, in a case where the robot does not carry the wafer:
when the first sealing valve is opened, the manipulator is positioned at the first standby position; when the second sealing valve is opened, the manipulator is positioned at the second waiting position.
Optionally, in the above-mentioned transmission cavity,
a driving mechanism is arranged in the cavity;
the driving mechanism is in transmission connection with the manipulator so as to drive the manipulator to switch positions between the first standby position and the second standby position.
Optionally, in the above-mentioned transmission cavity,
the driving mechanism is a rotating mechanism; the rotating mechanism is arranged at the center position between the first standby position and the second standby position;
the rotating mechanism drives the manipulator to rotate around a rotation central axis of the rotating mechanism so as to realize position switching of the manipulator between the first standby position and the second standby position.
Optionally, in the above-mentioned transmission cavity,
the manipulator can reciprocate between the first chamber and the first standby position;
the manipulator can reciprocate between the second chamber and the second standby position.
A semiconductor device, comprising: a reaction chamber, a transmission chamber and a carrier chamber;
the transmission cavity is the transmission cavity;
the reaction cavity is a first cavity;
the carrier cavity is a second cavity.
A wafer transfer method suitable for the semiconductor device described above; the wafer transmission method comprises a wafer entering flow; the wafer entering process comprises the following steps:
opening a second sealing valve between the carrier cavity and the transmission cavity;
enabling the manipulator positioned at the second waiting machine position to enter the carrying platform cavity and carrying the wafer in the carrying platform cavity;
returning the manipulator carrying the wafer to the second waiting position and closing the second sealing valve;
opening a first sealing valve between the transmission cavity and the reaction cavity;
controlling the manipulator carrying the wafer to move from the second waiting position to the reaction cavity, and placing the wafer in the reaction cavity;
and moving the manipulator from the reaction cavity to a first standby position and closing the first sealing valve.
Optionally, the wafer conveying method further includes a wafer discharging process; the wafer discharging process comprises the following steps:
opening the first sealing valve;
enabling the manipulator positioned at the first standby position to enter the reaction cavity and bearing the wafer in the reaction cavity;
returning the robot carrying the wafer to the first standby position and closing the first sealing valve;
opening the second sealing valve;
controlling the manipulator carrying the wafer to move from the first standby position to the carrier cavity, and placing the wafer in the carrier cavity;
and moving the manipulator from the carrier cavity to the second waiting position and closing the second sealing valve.
Optionally, in the above wafer transfer method,
filling inert gas into the carrier cavity before the second sealing valve is opened so as to balance the pressure difference between the carrier cavity and the transmission cavity after the second sealing valve is opened;
and before the first sealing valve is opened, filling inert gas into the transmission cavity so as to balance the pressure difference between the transmission cavity and the reaction cavity after the first sealing valve is opened.
Optionally, in the wafer transferring method, the driving mechanism drives the manipulator to switch positions between the first standby position and the second standby position, so as to switch positions of the wafer between the first standby position and the second standby position.
In the transmission cavity, the semiconductor device with the transmission cavity and the wafer transmission method applicable to the semiconductor device, a wafer is transmitted from a first cavity to a second cavity through the transmission cavity; the mechanical arm is arranged in the cavity of the transmission cavity, and is provided with a first standby position close to the first cavity and far away from the second cavity and a second standby position close to the second cavity and far away from the first cavity; the chambers to which the wafers in the first chamber and the second chamber are transmitted are target chambers; under the condition that the wafer is borne on the manipulator in the cavity of the transmission cavity, when the sealing valve between the target cavity and the transmission cavity is opened, the manipulator is located on the standby position far away from the target cavity, so that dust and particles in the target cavity are prevented from unavoidably drifting and adhering to the surface of the wafer, and the surface quality of the wafer is effectively ensured.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings may be obtained according to the provided drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art transfer chamber;
FIG. 2 is a flow chart of a wafer loading process of a prior art wafer transfer method;
FIG. 3 is a flow chart of a wafer out process of a prior art wafer transfer method;
FIG. 4 is a schematic view of the structure of the transmission chamber of the present application;
FIG. 5 is a flow chart of the wafer loading process of the wafer transfer method of the present application;
fig. 6 is a flowchart of a wafer outputting process of the wafer transferring method of the present application.
In fig. 1-3:
the device comprises a 1-transmission cavity, a 2-reaction cavity, a 3-carrier cavity, a 4-wafer, a 5-first sealing valve and a 6-second sealing valve;
11-waiting machine position, 12-manipulator and 13-driving mechanism;
201, waiting for a reaction cavity;
302-stand-by station cavity.
Fig. 4-6:
the device comprises a 1-transmission cavity, a 2-reaction cavity, a 3-carrier cavity, a 4-wafer, a 5-first sealing valve and a 6-second sealing valve;
101-a first standby position, 102-a second standby position, 103-a manipulator and 104-a driving mechanism;
201, waiting for a reaction cavity;
301-carrying platform cavity waiting machine position.
Detailed Description
The application provides a transmission cavity and also provides a semiconductor device comprising the transmission cavity; a wafer transmission method suitable for the semiconductor device is also provided.
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
As shown in fig. 4-6, a transfer chamber 1 is used to transfer a wafer 4 from a first chamber to a second chamber; a first sealing valve is arranged between the transmission cavity 1 and the first cavity; a second sealing valve is arranged between the transmission cavity 1 and the second cavity. The transfer chamber 1 comprises a chamber body and a manipulator 103 movably arranged in the chamber body. The robot 103 has a first standby position 101 and a second standby position 102 within the chamber. The first standby position 101 is close to the first chamber and far from the second chamber; the second standby station 102 is close to the second chamber and far from the first chamber.
Transferring the wafer 4 from the first chamber to the second chamber through the transfer chamber 1; the chamber to which the wafer 4 is transferred from the first chamber and the second chamber is a target chamber.
When the target chamber is the first chamber and the robot 103 in the cavity of the transfer chamber 1 carries the wafer, the robot 103 is located at the second waiting position 102 far from the first chamber when the first sealing valve between the first chamber and the transfer chamber 1 is opened.
When the first sealing valve is opened, the dust and the particles in the first cavity outwards drift due to the environmental difference, and the wafer 4 is located at the second standby position 102 far away from the first cavity, so that the dust and the particles are prevented from adhering to the surface of the wafer 4, the cleanliness of the wafer 4 in the cavity of the transmission cavity 1 is effectively ensured, and the surface quality of the wafer 4 is further ensured.
When the target chamber is the second chamber and the robot 103 in the chamber of the transfer chamber 1 carries the wafer, the robot 103 is located at the first standby position 101 far from the second chamber when the second sealing valve between the second chamber and the transfer chamber 1 is opened.
When the second sealing valve is opened, the dust and the particles in the second cavity outwards drift due to the environmental difference, and the wafer 4 is located at the first standby position 101 far away from the second cavity, so that the dust and the particles are prevented from adhering to the surface of the wafer 4, the cleanliness of the wafer 4 in the cavity of the transmission cavity 1 is effectively ensured, and the surface quality of the wafer 4 is further ensured.
In certain embodiments of the present application, the wafer 4 is transferred from the first chamber to the second chamber through the transfer chamber 1; the first chamber and the second chamber are chambers having a start point of transfer of the wafer 4 as a start chamber.
When the robot 103 in the cavity of the transfer chamber 1 does not carry the wafer 4 and the initial chamber is the first chamber, the first sealing valve between the first chamber and the transfer chamber 1 is opened when the wafer 4 is located in the first chamber, and the robot 103 is located at the first standby position 101 near the first chamber.
By the arrangement, the transmission distance between the first chamber and the manipulator 103 is shortened, and therefore the wafer 4 in the first chamber is guaranteed to be rapidly transferred to the manipulator 103 at the first standby position 101 close to the first chamber, and the transmission efficiency of the wafer is greatly improved.
When the robot 103 in the cavity of the transfer chamber 1 does not carry the wafer 4 and the initial chamber is the second chamber, and the wafer 4 is located in the second chamber, the second sealing valve between the second chamber and the transfer chamber 1 is opened, and the robot 103 is located at the second waiting position 102 near the second chamber.
By the arrangement, the transmission distance between the second chamber and the manipulator 103 is shortened, and therefore the wafer 4 in the second chamber is guaranteed to be rapidly transferred to the manipulator 103 positioned at the second waiting position 102 close to the second chamber, and the transmission efficiency of the wafer is greatly improved.
In summary, the manipulator 103 in the transmission cavity 1 is always located at the standby position close to the initial cavity under the condition that the wafer 4 is not carried, so that the transmission efficiency of the wafer 4 is improved; meanwhile, the robot 103 is always located at a standby position far away from the target chamber under the condition of bearing the wafer 4, so that the cleanliness of the wafer in the transmission process is guaranteed.
In certain embodiments of the present application, the transfer lumen further comprises a drive mechanism 104; the drive mechanism 104 is disposed within the cavity of the transfer chamber 1. The driving mechanism 104 is in transmission connection with the manipulator 103. The driving mechanism 104 drives the manipulator 103 to switch the positions between the first standby position 101 and the second standby position 102, so that the position of the wafer 4 between the first standby position 101 and the second standby position 102 is switched, and the transmission efficiency of the wafer 4 in the cavity of the transmission cavity 1 is ensured.
In certain embodiments of the present application, the drive mechanism 104 is a rotary mechanism. The rotation mechanism is disposed at a central position between the first waiting position 101 and the second waiting position 102. The rotating mechanism drives the manipulator 103 to rotate around the rotation central axis of the rotating mechanism, so that position switching of the manipulator 103 between the first standby position 101 and the second standby position 102 is realized.
It should be noted that the rotation mechanism is located at a center position of the first waiting position 101 and the second waiting position 102. The rotating mechanism comprises a rotating shaft; the rotating shaft is vertically arranged; the central axis of the rotating shaft is the rotation central axis of the rotating mechanism. The manipulator 103 comprises an extension strut and a clamping jaw; the extension branch is placed horizontally, and one end of the extension branch is fixedly arranged on the rotating shaft, and the other end of the extension branch is connected with the clamping jaw. The extension strut has an extension length, and can extend the clamping jaw of the manipulator 103 from the rotation axis to the first standby position 101 or the second standby position 102.
The rotating mechanism works to drive the manipulator 103 to rotate around the rotating shaft, so that the position switching of the manipulator 103 from the first standby position 101 to the second standby position 102 is realized, the transmission is stable and reliable, and the speed is high; meanwhile, 180-degree exchange of the clamping jaw is also completed, so that the clamping end of the clamping jaw of the manipulator 103 always faces the first chamber or the second chamber, and the wafer 4 is conveniently transferred from the manipulator 103 to the first chamber or the second chamber.
It should be noted that, the driving mechanism 104 may be other arrangements besides a rotation mechanism; for example, a driving cylinder or a motor capable of linearly reciprocating between the first waiting position 101 and the second waiting position 102,
further, the manipulator 103 can reciprocate between the first chamber and the first standby position 101; the robot 103 is capable of reciprocating between the second chamber to the second standby position 102.
It should be noted that, the manipulator 103 includes a driving member; the driving piece comprises a driving part and a telescopic part, and the driving part drives the telescopic part to change the telescopic length; the extension support rod is the telescopic part. The extension strut has an amount of telescoping of the drive jaws from the first standby position 101 into the first chamber.
As set forth above, the process of entering or exiting a wafer from the first standby position 101 to the first chamber is completed by the robot 103; meanwhile, the process of entering or exiting the wafer from the second waiting position 102 to the second chamber is completed through the manipulator 103; the wafer 4 is smoothly, stably and rapidly transferred from the initial chamber to the target chamber, and the transfer efficiency of the wafer 4 is greatly improved.
A semiconductor device, comprising: a reaction cavity 2, a transmission cavity 1 and a carrier cavity 3; the transmission cavity 1 is the transmission cavity described above; the reaction chamber 2 is a first chamber; the stage chamber 3 is a second chamber.
Since the semiconductor device of the present application has the transmission cavity described above, the beneficial effects of the semiconductor device brought by the transmission cavity are referred to above, and will not be described herein.
Specific:
the carrier cavity 3 (Load Lock) is a transition cavity for isolating the reaction cavity 2 from the atmosphere in the semiconductor device, in which the wafer 4 is transferred to the reaction cavity 2 and the wafer 4 is transferred from the reaction cavity 2 to other process nodes, and the carrier cavity 3 has a carrier cavity standby position 301; the carrier chamber standby position 301 has a tray for carrying the wafer 4. The carrier chamber 3 is isolated from the transfer chamber 1 by a movable second sealing valve. In the process of opening the carrier cavity 3, atmospheric dust enters the cavity, so that certain dust is deposited in the cavity of the carrier cavity 3, and the tray for carrying the wafer 4 is unstable due to the adhesion of deposited crystals, so that some grains fall or are blown by backfill gas to fall on the cavity wall of the carrier cavity 3.
The transfer chamber 1 is an intermediate chamber for transferring the wafer 4 from the stage chamber 3 to the reaction chamber 2, and is also a mounting chamber for the carrier robot 103 for the wafer 4. The transfer chamber 1 is gas-insulated from the reaction chamber 2 by a movable first sealing valve and from the carrier chamber 3 by a movable second sealing valve. The manipulator 103 is installed in the middle of the cavity of the transmission cavity 1, and the manipulator 103 realizes the carrying functions of grabbing/releasing the wafer 4 from the tray of the carrier cavity 3, releasing and grabbing the wafer 4 from the reaction cavity 2 and the like through the telescopic action of the front and back directions under the cooperation of the rotating shaft of the rotating mechanism.
The reaction chamber 2 is a reaction chamber for MOCVD epitaxial growth, and a reaction chamber standby position 201 is arranged in the reaction chamber 2; at high temperature, the mixed reaction gas raw materials enter a reaction cavity 2 according to the process requirements, and chemical reaction is carried out between the inside of the reaction cavity 2 and the surface of a wafer 4 to form a silicon carbide film; residual gas raw materials are pumped away by the pumping subsystem, so that the constant gas pressure in the reaction cavity 2 is ensured. Meanwhile, due to the difference of the wall temperature of the high-temperature reaction chamber 2, which is in contact with the gas, granular and dust-like byproducts are also generated in the area outside the wafer surface.
Because the transmission cavity 1 selects the transmission cavity 1, the wafer 4 can be prevented from being polluted by dust and particles in the carrier cavity 3 and the transmission cavity 1 in the transmission process, and the surface quality of the wafer 4 is further ensured.
Referring to fig. 4 and 5, a wafer transfer method is applicable to the above-mentioned semiconductor device; the wafer transmission method comprises a wafer entering flow; the wafer loading process comprises the following steps:
a: opening a second sealing valve between the carrier cavity 3 and the transmission cavity 1;
b: enabling the manipulator 103 positioned at the second waiting machine position 102 to enter the carrying platform cavity 3 and grabbing the wafer 4 on the tray at the carrying platform cavity standby position 301 of the carrying platform cavity 3;
c: returning the manipulator 103 carrying the wafer 4 to the second waiting position 102 and closing the second sealing valve;
d: opening a first sealing valve between the transmission cavity 1 and the reaction cavity 2;
e: the mechanical arm 103 for bearing the wafer 4 is controlled to move from the second standby position 102 into the reaction chamber 2, and the wafer 4 is placed in the reaction chamber standby position 201 of the reaction chamber 2;
f: the robot 103 is returned from the reaction chamber 2 to the first standby position 101 and the first sealing valve is closed.
It should be noted that, the above procedure E includes:
e1: controlling the manipulator 103 carrying the wafer 4 to switch positions from the second standby position 102 to the first standby position 101;
e2: the robot 103 at the first standby position 101 is brought into the reaction chamber 2, and the wafer 4 is placed in the reaction chamber standby position 201 of the reaction chamber 2.
In the wafer loading process, the carrier cavity 3 is an initial cavity, and the reaction cavity 2 is a target cavity; the wafer loading process is to transfer the wafer 4 in the carrier cavity 3 to the reaction cavity 2 for epitaxial growth of the wafer 4.
The wafer loading process realizes that when the manipulator 103 does not bear the wafer 4 and the second sealing valve is opened, the manipulator 103 is located at the second standby position 102 close to the carrier cavity 3, so that the process of rapidly taking the wafer 4 is realized; meanwhile, when the manipulator 103 bears the wafer 4 and the first sealing valve is opened, the manipulator 103 happens to be located at the second waiting position 102 far away from the reaction cavity 2, so that the wafer 4 is further away from the reaction cavity 2, pollution of dust and particles in the reaction cavity 2 to the wafer 4 is avoided, cleanliness of wafer entering flow is further guaranteed, and surface quality of the wafer 4 is guaranteed.
Referring to fig. 4 and 6, further, the wafer transfer method includes a wafer discharging process; the wafer discharging process comprises the following steps:
a: opening a first sealing valve between the reaction cavity 2 and the transmission cavity 1;
b: enabling the manipulator 103 positioned at the first standby position 101 to enter the reaction cavity 2, and grabbing the wafer 4 at the reaction cavity standby position 201 of the reaction cavity 2;
c: returning the robot 103 carrying the wafer 4 to the first standby position 101 and closing the first sealing valve;
d: opening a second sealing valve between the carrier cavity 3 and the reaction cavity 2;
e: the robot 103 for bearing the wafer 4 is controlled to move from the first standby position 101 into the carrier cavity 3, and the wafer 4 is placed on a tray at the carrier cavity standby position 301 of the carrier cavity 3;
f: returning the manipulator 103 from the carrier cavity 3 to the second waiting position 102 and closing the second sealing valve;
g: and finishing the wafer discharging process.
It should be noted that, the above procedure e includes:
e1: controlling the manipulator 103 carrying the wafer 4 to switch the position from the first standby position 101 to the second standby position 102;
e2: the robot 103 at the second standby station 102 is brought into the stage chamber 3, and the wafer 4 is placed on the tray at the stage chamber standby station 301 of the stage chamber 3.
In the wafer discharging process, the reaction chamber 2 is an initial chamber, and the carrier chamber 3 is a target chamber; the wafer discharging process is to transfer the wafer after epitaxial growth from the reaction chamber 2 to the stage chamber 3.
The wafer discharging process realizes that when the manipulator 103 does not bear the wafer 4 and the first sealing valve is opened, the manipulator 103 is located at the first standby position 101 close to the reaction cavity 2, so that the wafer 4 is rapidly discharged; meanwhile, when the manipulator 103 bears the wafer 4 and the second sealing valve is opened, the manipulator 103 happens to be located at the first standby position 101 far away from the carrying platform cavity 3, so that the wafer 4 is further guaranteed to be far away from the carrying platform cavity 3, pollution of dust and particles in the carrying platform cavity 3 to the wafer 4 is further avoided, cleanliness of a wafer discharging process is further guaranteed, and surface quality of the wafer 4 is guaranteed.
In some embodiments of the present application, an inert gas is filled into the carrier chamber 3 before the second sealing valve is opened to balance the pressure difference between the carrier chamber 3 and the transfer chamber 1 after the second sealing valve is opened. Before the first sealing valve is opened, inert gas is filled in the transfer chamber 1 to balance the pressure difference between the transfer chamber 1 and the reaction chamber 2 after the first sealing valve is opened.
The arrangement can ensure that the wafer 4 is in a constant pressure state in the whole transmission process, thereby avoiding the defect that the pressure difference causes adverse effect on the wafer 4 and further ensuring the surface quality of the wafer 4.
In some embodiments of the present application, the driving mechanism 104 drives the robot 103 to switch the position between the first standby position 101 and the second standby position 102, so as to switch the position of the wafer 4 between the first standby position 101 and the second standby position 102.
Further, the driving mechanism 104 is a rotation mechanism. The rotation mechanism is disposed at a central position between the first waiting position 101 and the second waiting position 102. The rotating mechanism drives the manipulator 103 to rotate around the rotation central axis of the rotating mechanism, so that position switching of the manipulator 103 between the first standby position 101 and the second standby position 102 is realized.
The rotating mechanism works to drive the manipulator 103 to rotate around the rotation central axis, so that the position switching of the manipulator 103 and the wafer 4 from the first standby position 101 to the second standby position 102 is realized, the transmission is stable and reliable, and the speed is high; meanwhile, 180 degrees of exchange of the clamping end of the manipulator 103 is also completed, so that the clamping end of the manipulator 103 always faces the reaction cavity 2 or the carrier cavity 3, and the manipulator 103 transfers the wafer 4 to the reaction cavity 2 or the carrier cavity 3 conveniently.
The components, arrangements, etc. referred to in this application are meant to be illustrative examples only and are not intended to require or imply that the connections, arrangements, configurations must be made in the manner shown in the drawings. These components, devices, may be connected, arranged, configured in any manner, as will be appreciated by those skilled in the art. Words such as "including," "comprising," "having," and the like are words of openness and mean "including but not limited to," and are used interchangeably therewith. The terms "or" and "as used herein refer to and are used interchangeably with the term" and/or "unless the context clearly indicates otherwise. The term "such as" as used herein refers to, and is used interchangeably with, the phrase "such as, but not limited to.
It should also be noted that in the device of the present application, the components may be disassembled and/or assembled again. Such decomposition and/or recombination should be considered as equivalent to the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the application to the form disclosed herein. Although a number of example aspects and embodiments have been discussed above, a person of ordinary skill in the art will recognize certain variations, modifications, alterations, additions, and subcombinations thereof.
The foregoing description of the preferred embodiments of the present invention is not intended to limit the invention to the precise form disclosed, and any modifications, equivalents, and alternatives falling within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A transfer chamber for transferring a wafer from a first chamber to a second chamber; a first sealing valve is arranged between the transmission cavity and the first cavity; a second sealing valve is arranged between the transmission cavity and the second cavity; characterized by comprising the following steps:
a cavity;
the manipulator (103) is movably arranged in the cavity and is provided with a first standby position (101) and a second standby position (102), and the first standby position (101) is close to the first cavity and far away from the second sealing valve; the second waiting machine position (102) is close to the second chamber and far away from the first sealing valve;
wherein, under the condition that the manipulator (103) carries the wafer: when the first sealing valve is switched from a closed state to a fully opened state, the manipulator (103) is always positioned at the second waiting position (102) far away from the first chamber; the manipulator (103) is always located in the first standby position (101) remote from the second chamber when the second sealing valve is switched from a closed state to a fully open state.
2. The transfer chamber of claim 1, wherein, in the case where the robot (103) does not carry the wafer:
when the first sealing valve is opened, the manipulator (103) is positioned at the first standby position (101); when the second sealing valve is opened, the manipulator (103) is positioned at the second waiting position (102).
3. The transfer chamber of claim 1, wherein the chamber is configured to receive a fluid,
a driving mechanism (104) is arranged in the cavity;
the driving mechanism (104) is in transmission connection with the manipulator (103) so as to drive the manipulator (103) to switch positions between the first standby position (101) and the second standby position (102).
4. A transfer chamber according to claim 3, wherein,
the driving mechanism (104) is a rotating mechanism; the rotating mechanism is arranged at the center position between the first standby position (101) and the second standby position (102);
the rotating mechanism drives the manipulator (103) to rotate around a rotation central axis of the rotating mechanism so as to realize position switching of the manipulator (103) between the first standby position (101) and the second standby position (102).
5. The transfer chamber of any one of claims 1-4, wherein,
-said manipulator (103) being reciprocally movable between said first chamber to said first waiting position (101);
the manipulator (103) can reciprocate between the second chamber and the second waiting position (102).
6. A semiconductor device, comprising: a reaction chamber, a transmission chamber and a carrier chamber; it is characterized in that the method comprises the steps of,
the transfer chamber is the transfer chamber of any one of claims 1-5;
the reaction cavity is a first cavity;
the carrier cavity is a second cavity.
7. A wafer transfer method suitable for the semiconductor device of claim 6, comprising a wafer loading process; the wafer entering process comprises the following steps:
opening a second sealing valve between the carrier cavity and the transmission cavity;
enabling a manipulator (103) positioned at the second waiting machine position (102) to enter the carrying platform cavity and carrying the wafer in the carrying platform cavity;
returning the robot (103) carrying the wafer to the second standby position (102) and closing the second sealing valve;
opening a first sealing valve between the transmission cavity and the reaction cavity;
controlling the manipulator (103) carrying the wafer to move from the second waiting position (102) into the reaction cavity, and placing the wafer in the reaction cavity;
the robot (103) is moved from the reaction chamber to a first standby position (101) and the first sealing valve is closed.
8. The wafer transfer method of claim 7, further comprising a wafer out-of-wafer process; the wafer discharging process comprises the following steps:
opening the first sealing valve;
enabling the manipulator (103) positioned at the first standby position (101) to enter the reaction cavity and bear the wafer in the reaction cavity;
returning the robot (103) carrying the wafer to the first standby position (101) and closing the first sealing valve;
opening the second sealing valve;
controlling the manipulator (103) carrying the wafer to move from the first standby position (101) into the carrier cavity, and placing the wafer in the carrier cavity;
and moving the manipulator (103) from the carrier cavity to the second waiting position (102) and closing the second sealing valve.
9. The method for transporting wafers according to claim 7 or 8, wherein,
filling inert gas into the carrier cavity before the second sealing valve is opened so as to balance the pressure difference between the carrier cavity and the transmission cavity after the second sealing valve is opened;
and before the first sealing valve is opened, filling inert gas into the transmission cavity so as to balance the pressure difference between the transmission cavity and the reaction cavity after the first sealing valve is opened.
10. The wafer transfer method according to claim 7 or 8, characterized in that the robot (103) is driven by a driving mechanism (104) to perform position switching between the first standby position (101) and the second standby position (102) so as to achieve position switching of the wafer between the first standby position (101) and the second standby position (102).
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