CN115863169B - GaN-based HEMT device and preparation method thereof - Google Patents
GaN-based HEMT device and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000010432 diamond Substances 0.000 claims abstract description 94
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 31
- 239000000126 substance Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 25
- 238000005457 optimization Methods 0.000 abstract 1
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- -1 al 2 O 3 Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention discloses a GaN-based HEMT device and a preparation method thereof, wherein the GaN-based HEMT device comprises a diamond film layer grown on a silicon substrate; windowing in a diamond film layer to obtain a first windowing, wherein the first windowing penetrates through the diamond film layer; growing an epitaxial layer on the silicon substrate in the first window, and manufacturing ohmic contact; continuing to grow the diamond film layer so that the diamond film layer completely covers the epitaxial layer and the ohmic contact; windowing on the diamond film layer above the ohmic contact to obtain a second window, and windowing on the diamond film layer above the AlGaN layer to obtain a third window; and manufacturing a source electrode and a drain electrode in the second window, manufacturing a gate dielectric in the third window, and manufacturing a grid electrode to obtain the GaN HEMT power device. By designing the diamond heat dissipation area around and on the surface of the device, the bonding problem is avoided, the area of the heat dissipation area can be flexibly set according to the actual power requirement, and the optimization of the performance and the output is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a GaN-based HEMT device and a preparation method thereof.
Background
The GaN forbidden band width is large, the carrier mobility is high, and the HEMT device (High Electron Mobility Transistor) manufactured based on the GaN material has the characteristics of high withstand voltage, high working frequency and high-temperature operation. However, with the increase in power and the reduction in device size of GaN-based microwave power devices, the problem of heat dissipation becomes an important factor restricting their reliable operation, and thus it is required to enhance their heat dissipation capability. Conventional heat dissipation methods are to deposit or bond materials with high thermal conductivity on the front or back of the device. Among the currently known natural materials, diamond has the highest thermal conductivity (800W/m.K-1800W/m.K), and is an excellent thermal conductive material applied to GaN-based high-power devices.
Currently, two main methods for radiating heat by using diamond are available, one is to grow diamond on the surface of a device in a chemical device deposition mode, and the other is to grind off an original silicon-based substrate and then bond a GaN layer with the diamond substrate by using an intermediate bonding layer. Because the GaN film is epitaxial on the silicon substrate, gaN has very large warping degree due to lattice mismatch, thermal mismatch and the like in the growth process, and when GaN is bonded with the diamond substrate, bonding failure and even wafer breakage are often caused due to large difference of warping degree between the diamond and the GaN. Therefore, new heat dissipation processes are urgently needed to prepare GaN-based HEMT devices.
Disclosure of Invention
The invention aims to solve the problem of bonding between diamond and GaN in the heat dissipation process of the existing GaN-based HEMT device, further improve the heat dissipation effect of the device, and provide a GaN-based HEMT device and a preparation method thereof.
The aim of the invention is realized by the following technical scheme:
in a first aspect, a method for manufacturing a GaN-based HEMT device is provided, the method comprising:
s1, growing a diamond film layer on a silicon substrate;
s2, windowing in the diamond film layer to obtain a first windowing, wherein the first windowing penetrates through the diamond film layer;
s3, growing an epitaxial layer on the silicon substrate in the first window, wherein the epitaxial layer comprises a buffer layer, a GaN layer and an AlGaN layer which are sequentially connected, and ohmic contact is manufactured on the AlGaN layer;
s4, continuing to grow the diamond film layer so that the diamond film layer completely covers the epitaxial layer and the ohmic contact;
s5, windowing on the diamond film layer above the ohmic contact to obtain a second window, and windowing on the diamond film layer above the AlGaN layer to obtain a third window;
s6, manufacturing a source electrode and a drain electrode in the second window, manufacturing a gate dielectric in the third window, and manufacturing a grid electrode on the gate dielectric to obtain the GaN HEMT power device.
As a preferred option, in the method for manufacturing a GaN-based HEMT device, the height of the first window is the same as the thickness of the diamond film layer in step S1.
As a preferred option, the thickness of the diamond film layer in the step S1 is 3um-5 um.
As a preferred option, the first window extends into the silicon substrate.
As a preferred option, the thickness of the diamond film layer in the step S1 is 100nm-2000nm.
As a preferred option, the preparation method of the GaN-based HEMT device comprises the step of enabling the first window to have a window depth of 3um-5um in the silicon substrate.
As a preferred option, a method for manufacturing a GaN-based HEMT device, in the step S3, chemical mechanical polishing is used after the fabrication of the epitaxial layer is completed, so as to obtain a flat surface.
In a second scheme, a GaN-based HEMT device is provided, and comprises a silicon substrate and an epitaxial layer which are sequentially connected from bottom to top, wherein a diamond film layer surrounding the epitaxial layer is further arranged on the silicon substrate, and the diamond film layer is covered on the epitaxial layer;
the epitaxial layer comprises a buffer layer, a GaN layer and an AlGaN layer which are sequentially connected, ohmic contact and a gate medium are arranged on the AlGaN layer, a second window is formed in the diamond film layer above the ohmic contact, a source electrode and a drain electrode are arranged in the second window, a third window is formed in the diamond film layer above the gate medium, and a grid electrode is arranged in the third window.
As a preferred option, the thickness of the epitaxial layer is 3um-5 um.
As a preferred option, a GaN-based HEMT device has the bottom end of the epitaxial layer embedded in the silicon substrate.
It should be further noted that the technical features corresponding to the above options may be combined with each other or replaced to form a new technical scheme without collision.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the invention, the diamond film layer is deposited on the silicon substrate, then the diamond film layer is windowed, the epitaxial layer and the ohmic contact are grown on the silicon substrate, meanwhile, the diamond film layer completely covers the epitaxial layer and the ohmic contact, and the heat dissipation effect of the device can be improved by designing the diamond heat dissipation area around and on the surface of the device, so that the problem brought by bonding is avoided. In addition, the area of the diamond heat dissipation area can be flexibly set according to the actual power requirement, the heat dissipation capacity is flexibly controlled, and the performance and the output are optimized.
(2) In one example, extending the first window into the silicon substrate reduces the thickness of the first grown diamond film layer, saving process time and cost.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a GaN-based HEMT device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a diamond film layer grown on a silicon substrate according to an embodiment of the present invention;
FIG. 3 is a schematic view of a first window formed in the diamond film layer according to an embodiment of the present invention;
fig. 4 is a schematic diagram showing that an epitaxial layer is grown on a silicon substrate in the first window, the epitaxial layer includes a buffer layer, a GaN layer, and an AlGaN layer that are sequentially connected, and ohmic contact is made on the AlGaN layer, according to an embodiment of the present invention;
FIG. 5 is a schematic diagram showing the continued growth of the diamond film layer such that the diamond film layer completely covers the epitaxial layer and ohmic contacts and windows on the front side of the diamond film layer, according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a GaN HEMT power device according to an embodiment of the present invention, in which a source and a drain are fabricated in the second window, a gate dielectric is fabricated in the third window, and a gate is fabricated on the gate dielectric;
fig. 7 is a schematic view of a device structure in which the first window 3 extends into the silicon substrate 1 according to an embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating the fabrication of a temporary bonding layer according to an embodiment of the present invention;
FIG. 9 is a schematic diagram showing the process of adhering the front surface of the device after the epitaxial layer is completed to the temporary bonding glue and grinding the underlying silicon substrate according to the embodiment of the present invention;
FIG. 10 is a schematic illustration of a diamond substrate grown with a transition layer and bonded to the structure of FIG. 9, in accordance with an embodiment of the present invention;
fig. 11 is a block diagram of a device completed with a temporary bond substrate according to an embodiment of the present invention;
fig. 12 is a block diagram of a device fabricated using a temporary bonding process and integrated windowing to the silicon substrate, as well as the integrated windowing performed by an embodiment of the present invention.
Reference numerals in the drawings: 1. a silicon substrate; 2. a diamond film layer; 3. a first window; 4. a buffer layer; 5. a GaN layer; 6. an AlGaN layer; 7. ohmic contact; 8. a second window; 9. a third window; 10. a source electrode; 11. a drain electrode; 12. a gate dielectric; 13. a gate; 14. temporarily bonding the substrate; 15. temporary bonding glue; 16. a diamond substrate; 17. and a transition layer.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully understood from the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that directions or positional relationships indicated as being "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are directions or positional relationships described based on the drawings are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
In an exemplary embodiment, a method for manufacturing a GaN-based HEMT device is provided, as shown in fig. 1-6, the method including the steps of:
s1, referring to FIG. 2, growing a diamond film layer 2 on a silicon substrate 1;
s2, referring to FIG. 3, windowing the diamond film layer 2 to obtain a first window 3, wherein the first window 3 penetrates through the diamond film layer 2;
s3, referring to FIG. 4, growing an epitaxial layer on the silicon substrate 1 in the first window 3, wherein the epitaxial layer comprises a buffer layer 4, a GaN layer 5 and an AlGaN layer 6 which are sequentially connected, and manufacturing an ohmic contact 7 on the AlGaN layer 6;
s4, continuing to grow the diamond film layer 2, so that the diamond film layer 2 completely covers the epitaxial layer and the ohmic contact 7;
s5, referring to FIG. 5, windowing is performed on the diamond film layer 2 above the ohmic contact 7 to obtain a second window 8, and windowing is performed on the diamond film layer 2 above the AlGaN layer 6 to obtain a third window 9;
s6, referring to FIG. 6, a source electrode 10 and a drain electrode 11 are manufactured in the second window 8, a gate dielectric 12 is manufactured in the third window 9, and a grid electrode 13 is manufactured on the gate dielectric 12, so that the GaN HEMT power device is obtained.
In particular, the general approach to increasing heat dissipation is to use highly thermally conductive materials on the back side or highly thermally conductive materials on the front side of the device. The use of a highly thermally conductive material such as diamond for the back side may further enhance heat dissipation by applying the back side to the highly thermally conductive frame material during packaging. However, for the heat conducting materials such as diamond deposited on the front surface, the surface source, drain and gate areas cannot be deposited, so that the area is limited to a certain extent. In addition, because other heat conducting materials are not adhered on the front surface of the device, the final effect is that heat generated in a real heating area (mainly between a source and a drain) of the device is transmitted to a diamond coverage area, and then heat exchange and heat dissipation are carried out between the diamond and air. In this case, the surface area of the heat dissipation material is a factor that mainly affects the heat dissipation effect. According to the invention, the diamond film layer 2 is deposited on the silicon substrate 1, then the diamond film layer 2 is windowed, and the epitaxial layer and the ohmic contact 7 are grown from the silicon substrate 1, meanwhile, the diamond film layer 2 completely covers the epitaxial layer and the ohmic contact 7, and the heat dissipation effect of the device can be improved by designing the diamond heat dissipation area around and on the surface of the device, so that the problem caused by bonding is avoided. In addition, the area of the diamond heat dissipation area can be flexibly set according to the actual power requirement, the heat dissipation capacity is flexibly controlled, and the performance and the output are optimized.
In one example, in the method for manufacturing a GaN-based HEMT device, the height of the first window is the same as the thickness of the diamond film layer in step S1, as shown in fig. 6, that is, the first window 3 does not extend into the silicon substrate 1.
In one example, in the method for manufacturing a GaN-based HEMT device, the thickness of the diamond film layer 2 in the step S1 is 3um to 5um, and the window depth of the first window 3 in the silicon substrate is 3um to 5um. The total thickness of the epitaxial layer is ensured to be in the order of 3um-5um, and the heat dissipation effect is ensured.
In one example, a method for manufacturing a GaN-based HEMT device, the first window 3 extends into the silicon substrate 1. In particular, since the total thickness of GaN material (i.e., epitaxial layer) is on the order of 3um-5um, the thickness of diamond for the first growth is required to be 3um-5um, and the growth time and growth cost are both high, so an improvement scheme is proposed. As shown in fig. 7, a diamond thin film layer 2 is deposited on a silicon substrate 1, then diamond is windowed, the window is opened up into the silicon substrate 1, and then GaN is epitaxial from the window on the silicon substrate, and a device is prepared. According to the scheme, the diamond surrounding the GaN is used as a heat dissipation area of the device, and the heat dissipation effect of the device can be improved to a certain extent. At this time, the thickness of the diamond film layer 2 in the step S1 is 100nm to 2000nm. The first window 3 has a window depth of 3um-5um in the silicon substrate 1, and at least a part of the GaN layer 5 is higher than the upper surface of the silicon substrate 1, so as to ensure that the GaN layer 5 can be contacted with the diamond film layer 2, and the heat dissipation capability of the GaN layer 5 is improved by utilizing the high heat conduction characteristic of diamond.
In one example, a method for manufacturing a GaN-based HEMT device, in the step S3, chemical mechanical polishing is used after the fabrication of the epitaxial layer is completed, so as to obtain a flat surface.
In another exemplary embodiment, a GaN-based HEMT device is provided, as shown in fig. 6, including a silicon substrate 1 and an epitaxial layer sequentially connected from bottom to top, a diamond film layer 2 surrounding the epitaxial layer is further provided on the silicon substrate 1, and the diamond film layer 2 covers the epitaxial layer;
the epitaxial layer comprises a buffer layer 4, a GaN layer 5 and an AlGaN layer 6 which are sequentially connected, ohmic contact 7 and a gate dielectric 12 are arranged on the AlGaN layer 6, a second window 8 is formed in the diamond film layer 2 above the ohmic contact 7, a source electrode 10 and a drain electrode 11 are arranged in the second window 8, a third window 9 is formed in the diamond film layer 2 above the gate dielectric 12, and a grid electrode 13 is arranged in the third window 9.
In one example, a GaN-based HEMT device, the epitaxial layer has a thickness of 3um-5 um.
In one example, a GaN-based HEMT device, the bottom end of the epitaxial layer is embedded in the silicon substrate 1, see fig. 7.
In another exemplary embodiment, a method for manufacturing a GaN-based HEMT device is provided, which is different from the method in fig. 1 in that the steps after the epitaxial layer is manufactured include:
referring to fig. 8, a temporary bonding layer is fabricated: a temporary bonding substrate 14, preferably a silicon wafer, is selected, and a temporary bonding adhesive 15 is coated on the temporary bonding substrate 14;
referring to fig. 9, the front surface of the device after the completion of the epitaxial layer is bonded with the temporary bonding adhesive 15, and the underlying silicon substrate 1 is polished off;
referring to FIG. 10, a transition layer 17 is grown on a diamond substrate 16, the transition layer 17 has a thickness of 10-nm-100 nm, the transition layer 17 material may be polysilicon, al 2 O 3 ，SiO 2 Etc.; bonding the transition layer 17 to the material from which the silicon substrate 1 has been polished off;
referring to fig. 11, the temporary bonding layer is removed and the device fabrication is completed.
Specifically, the device structure replaces the silicon substrate 1 with the diamond substrate 16 by means of a temporary bonding substrate, so that the heat conduction capability of the diamond can be better utilized. Wherein, the diamond material with very high hardness is arranged on the silicon substrate 1, and the process of grinding and chemical mechanical polishing can be used to ensure that etching is stopped on the lower surface of the diamond film layer 2, thus realizing self-stopping of grinding and omitting the reactive ion etching process.
In another exemplary embodiment, a method for manufacturing a GaN-based HEMT device is provided, which includes a process of extending a first window 3 into the silicon substrate 1 and using temporary bonding, including:
growing a diamond film layer 2 on a silicon substrate 1, wherein the thickness of the diamond film layer 2 is 1000nm-2000nm; extending a first window 3 into the silicon substrate 1, wherein the window depth of the first window 3 in the silicon substrate 1 is 3um-5 um;
growing an epitaxial layer (at least one part of the GaN layer 5 is higher than the upper surface of the silicon substrate), performing chemical mechanical polishing to obtain a flat surface, and then performing the temporary bonding process to grind off the silicon substrate 1, the buffer layer 4 and part of the GaN layer 5;
a transition layer 17 is grown on the diamond substrate 16 and bonded to the structure described above and the temporary bonding structure is removed, resulting in the device shown in fig. 12.
Specifically, the device structure replaces the silicon substrate 1 with the diamond substrate 16 by means of a temporary bonding substrate, which makes better use of the heat conduction capability of diamond, than the structure of fig. 6. In practice, when growing GaN materials on a substrate (silicon, siC, sapphire, etc.), it is necessary to grow buffer layers (generally comprising multi-layer structures such as AlN, alGaN, etc.), and also thicker GaN layers (generally 2 um-3 um), which are grown mainly to solve the problem of lattice mismatch between the substrate and GaN, these layers have no effect in practical device applications. According to the scheme, the buffer layer 4 is removed through selective grinding, and meanwhile, a part of the GaN layer 5 is removed, so that the thickness of the whole GaN film is reduced to about 1um from 3um-5um in the traditional scheme, the thermal conductivity of the GaN film is poor, the thermal resistance of the film can be effectively reduced by reducing the thickness, the heat transmission capacity to the diamond substrate is enhanced, and the device performance is improved.
The foregoing detailed description of the invention is provided for illustration, and it is not to be construed that the detailed description of the invention is limited to only those illustration, but that several simple deductions and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and are to be considered as falling within the scope of the invention.
Claims (9)
1. The preparation method of the GaN-based HEMT device is characterized by comprising the following steps of:
s1, growing a diamond film layer on a silicon substrate;
s2, windowing in the diamond film layer to obtain a first windowing, wherein the first windowing penetrates through the diamond film layer; wherein the first window extends into the silicon substrate;
s3, growing an epitaxial layer on the silicon substrate in the first window, wherein the epitaxial layer comprises a buffer layer, a GaN layer and an AlGaN layer which are sequentially connected, and ohmic contact is manufactured on the AlGaN layer;
s4, continuing to grow the diamond film layer so that the diamond film layer completely covers the epitaxial layer and the ohmic contact;
s5, windowing on the diamond film layer above the ohmic contact to obtain a second window, and windowing on the diamond film layer above the AlGaN layer to obtain a third window;
s6, manufacturing a source electrode and a drain electrode in the second window, manufacturing a gate dielectric in the third window, and manufacturing a grid electrode on the gate dielectric to obtain the GaN HEMT power device.
2. The method for manufacturing a GaN-based HEMT device according to claim 1, wherein the height of the first window is the same as the thickness of the diamond film layer in step S1.
3. The method for manufacturing a GaN-based HEMT device according to claim 2, wherein the thickness of the diamond thin film layer in step S1 is 3um to 5um.
4. The method for manufacturing a GaN-based HEMT device according to claim 1, wherein the thickness of the diamond thin film layer in step S1 is 100nm to 2000nm.
5. The method for manufacturing the GaN-based HEMT device according to claim 1, wherein the first window has a window depth of 3um-5um in the silicon substrate.
6. The method for manufacturing a GaN-based HEMT device according to claim 1, wherein the step S3 is performed by chemical mechanical polishing after the epitaxial layer is manufactured, so as to obtain a flat surface.
7. The utility model provides a GaN-based HEMT device, includes silicon substrate and epitaxial layer that from the bottom up connects gradually, epitaxial layer is including buffer layer, gaN layer and the AlGaN layer that connects gradually, be equipped with ohmic contact and gate dielectric on the AlGaN layer, ohmic contact top is equipped with source and drain electrode, gate dielectric top is equipped with the grid, its characterized in that has diamond film layer around the device epitaxial layer and the place deposit of exposing on the AlGaN layer, the bottom embedding of epitaxial layer in the silicon substrate.
8. The GaN-based HEMT device of claim 7, wherein the epitaxial layer has a thickness of 3um-5 um.
9. The GaN-based HEMT device of claim 7, wherein a bottom end of said epitaxial layer is embedded in said silicon substrate.
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| CN202310441731.9A CN116230537A (en) | 2023-02-23 | 2023-02-23 | HEMT device based on diamond substrate and preparation method thereof |
| CN202310154697.7A CN115863169B (en) | 2023-02-23 | 2023-02-23 | GaN-based HEMT device and preparation method thereof |
| CN202310441730.4A CN116230536A (en) | 2023-02-23 | 2023-02-23 | High-heat-conductivity HEMT device using diamond substrate and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102339933A (en) * | 2011-10-08 | 2012-02-01 | 滨州市甘德电子科技有限公司 | Light-emitting diode (LED) radiating based on diamond microscopic graph structure |
| CN107204282A (en) * | 2017-06-26 | 2017-09-26 | 北京科技大学 | A kind of method based on non-self-supporting GaN to being sticked with standby Buddha's warrior attendant ground mass GaN |
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| WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
| US8643062B2 (en) * | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
| JP6318474B2 (en) * | 2013-06-07 | 2018-05-09 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
| JP2020517119A (en) * | 2017-04-10 | 2020-06-11 | アメリカ合衆国 | Diamond air bridge for thermal management of high power devices |
| US20220148941A1 (en) * | 2019-06-18 | 2022-05-12 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor device manufacturing method |
| CN111223929B (en) * | 2020-04-23 | 2020-11-03 | 浙江集迈科微电子有限公司 | GaN semiconductor structure with diamond micro-channel, device and preparation method |
| CN111564501A (en) * | 2020-07-15 | 2020-08-21 | 浙江集迈科微电子有限公司 | GaN device heat dissipation structure and preparation method thereof |
| CN114497038B (en) * | 2022-01-25 | 2024-02-06 | 西安电子科技大学 | GaN HEMT device and p-type diamond MOSFET integrated device and manufacturing method thereof |
| CN115547953A (en) * | 2022-10-11 | 2022-12-30 | 天津市滨海新区微电子研究院 | Power device heat dissipation structure and preparation method |
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- 2023-02-23 CN CN202310154697.7A patent/CN115863169B/en active Active
- 2023-02-23 CN CN202310441731.9A patent/CN116230537A/en not_active Withdrawn
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339933A (en) * | 2011-10-08 | 2012-02-01 | 滨州市甘德电子科技有限公司 | Light-emitting diode (LED) radiating based on diamond microscopic graph structure |
| CN107204282A (en) * | 2017-06-26 | 2017-09-26 | 北京科技大学 | A kind of method based on non-self-supporting GaN to being sticked with standby Buddha's warrior attendant ground mass GaN |
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| CN116230536A (en) | 2023-06-06 |
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