CN115770468A - A semiconductor waste gas treatment system - Google Patents

Abstract

The invention provides a semiconductor waste gas treatment system, which consists of a vacuum air extraction device, a plasma treatment device and a jet-type microbubble wet washing device. The vacuum pumping device adopts a two-section combination of a booster pump and a dry pump. The plasma processing device is installed between two pumps to perform low-pressure plasma processing, which can complete high-efficiency gas dissociation reaction with low energy consumption and overcome the difficulty that the product may flow back to pollute the processing system. Particularly, a large amount of diluted nitrogen is not required to be used in the operation, the operation specification of the vacuum pumping device can be reduced, and the generation of nitrogen oxides can be reduced. And finally, a jet-flow type microbubble wet washing device is adopted, so that gas and particles generated by reaction after plasma dissociation can be effectively treated, rough vacuum can be generated at the output end of the vacuum pumping device, the exhaust efficiency is improved, and the problem of particle blockage is greatly reduced.

Description

A semiconductor waste gas treatment system

technical field

The invention relates to a waste gas treatment system, in particular to a semiconductor waste gas treatment system.

Background technique

The production process of semiconductors will use a large amount of flammable, corrosive or highly toxic reactive gases, but the utilization rate of reactive gases in many semiconductor processes is very low, so the residual gases and reaction products that have not completely reacted in the process must be Drain the reaction process chamber. These mixed gases are generally called process waste gas or exhaust gas, which must be converted into harmless or treatable substances before they can be discharged.

The current exhaust gas system is mainly composed of a turbo pump connected to the reaction process chamber, a mechanical pump and a local scrubber system. The process exhaust gas is sequentially extracted from the reaction process chamber through the turbo vacuum pump, exhaust pipe and mechanical pump, and then sent to the local exhaust gas treatment system for treatment, and then sent to the central exhaust gas treatment system (central scrubber system) for discharge.

In order to properly treat process exhaust gas, many technologies have been proposed and used. For example, there is currently an existing technology that uses an air suction pump to discharge the process exhaust gas to a combustion scrubber for exhaust gas treatment before discharging the process exhaust gas, such as China Taiwan Patent No. I487872. However, combustion scrubbers are not effective in treating fluorine-containing compounds, and must be kept in operation at all times to provide a large amount of fuel gas, so the cost is greatly increased and energy is consumed, and the fuel gas is a flammable and explosive gas, which will increase public safety hazards. In addition, although there is another prior art that uses catalytic pyrolysis, the catalyst will suffer from aging and poisoning problems, and the cost of catalyst replacement and recycling is quite high. In addition, the catalytic pyrolysis method also needs to be kept in operation at all times and also consumes a lot of energy.

In addition, although there are currently technologies that use plasma torch scrubbers for waste gas treatment, such as China Taiwan Patent No. I285066, although plasma has been proven to effectively decompose process waste gases, especially for perfluorocarbons that require high-temperature treatment ((Perfluorinated Compounds, PFCs). However, it operates under atmospheric pressure and consumes a lot of energy. At the same time, because the plasma temperature exceeds thousands of degrees, the system components are not only costly but also have a short service life. Especially the stability of atmospheric plasma Not good, it is easy to cause the problem of plasma extinguishing due to changes in operating conditions.

On the other hand, existing theoretical technologies have proposed to install a plasma treatment device in front of the mechanical pump to treat waste gas under low pressure. The results show that the high energy of the electrons can effectively dissociate the waste gas under low pressure. Although the treatment effect is good, because the plasma treatment device is directly connected to the back end of the turbo vacuum pump, there may be doubts about the backflow of gas reactants to pollute the process, so it cannot be used. Accepted by semiconductor process, not currently used.

The current mechanical pump usually adopts a two-stage combination, that is, the first stage is a booster pump (Booster Pump), and the second stage is a dry pump (Dry Pump). The booster pump can accelerate the system to reach a lower air pressure due to its high pumping rate, so as to facilitate the second-stage dry pump to achieve the operating set air pressure. Existing mechanical pump operation must introduce a large amount of purge gas (purge gas) in the second stage (rear stage) of the dry pump, such as nitrogen to dilute flammable, corrosive or highly toxic process exhaust gases, and at the same time to slow down the process. The problem of pipe blockage caused by the generated solid particles. Since the gas flow rate is quite large, a high-power air pump must be used, which will increase operating costs and consume energy virtually. Moreover, if a large amount of nitrogen enters the current local waste gas treatment system such as a combustion type or a thermal reaction type scrubber, a large amount of greenhouse gases such as nitrogen oxides (NOx) will be generated, causing secondary pollution to the environment.

Furthermore, even if a large amount of purge gas is introduced, solid particles will still block the dry pump of the second stage (rear stage), especially its outlet, in some processes. This will seriously reduce the pumping efficiency and increase the operating current of the dry pump, which will not only increase energy consumption and increase operating costs, but even cause damage to the dry pump and cause process shutdown.

Contents of the invention

In order to solve the above-mentioned problems in the prior art, the purpose of the present invention is to provide a system that can effectively treat exhaust gas, and can reduce the energy consumption of mechanical pumps and greatly reduce the production of greenhouse gases such as nitrogen oxides (NOx), and can effectively solve the problem of Solve the problem of solid particle clogging to improve the service life of dry pumps. On the other hand, the present invention adopts low-pressure plasma waste gas treatment, and compared with normal-pressure plasma torch, low-pressure plasma is easy to ignite, has stable operation, low energy consumption, low component damage rate, and long maintenance period. More importantly, there is no problem of generated gas and particle backflow polluting the semiconductor process chamber, so it can be accepted by the current semiconductor process system.

Different from the previous technology, the semiconductor waste gas treatment system of the present invention includes a two-stage vacuum device, a plasma treatment chamber, a reaction gas supply chamber and a jet microbubble wet scrubbing device. At the same time, it also includes the integrated control signal to ensure that the plasma is activated only when there is process waste gas to be treated, and the operation mode of inputting the mixed reaction gas is used to save energy and increase the service life of the plasma system.

In order to achieve the above-mentioned purpose, the present invention proposes a semiconductor waste gas treatment system, which is suitable for processing at least one process waste gas produced by a process waste gas source. Composition of processing equipment. Wherein, the vacuum pumping device is a two-stage pump structure, which includes a first pump and a second pump. The first pump generates a first low-pressure environment to pump out the process exhaust gas generated by the process exhaust gas source, the second pump generates a second low-pressure environment between the first pump and the second pump, and the plasma treatment device is set in the second low-pressure environment The process waste gas is treated with low-pressure plasma, and an appropriate mixed reaction gas is added at the same time to convert the process waste gas into a harmless, stable or water-soluble reaction gas. For example, the mixed gas of CH ₄ and CHF ₃ is passed into water gas, The treatment efficiency (Destruction Removal Efficiency, DRE) can exceed 90%. NF ₃ is treated by mixing water and air. The water gas is dissociated into active particles of O, H, and OH by electrons in the plasma, and they can react with the NF _x particles of NF ₃ dissociated by the plasma. For example: OH+ _NF2 →NOF+HF, H+NF→N+HF, H+F→HF. However, HF can be effectively treated by wet scrubbing.

At the same time, low-pressure plasma treatment can also be used to miniaturize or remove solid particles carried by the process exhaust gas. For example, when using NF ₃ to clean the process chamber, mixed gases such as SiF ₄ , F, and NF _x will be generated, and the residual SiO in the previous process ₂ particles are also mixed into the exhaust gas together, these particles tend to aggregate together into large particles, and then deposit in the dry pump to form blockage. If the plasma is excited before entering the dry pump to make SiO ₂ react with NF _x and F remaining in the exhaust gas, the size of SiO ₂ can be reduced so that it is not easy to accumulate in the pump as the gas is discharged.

Among them, the exhaust gas scrubbing device is a jet-type microbubble wet exhaust gas scrubbing device, which generates a third low-pressure environment at the second pump outlet by the principle of a Venturi tube, through which the third low-pressure environment improves the second The pumping efficiency of the pump can greatly reduce the accumulated solid particles of the second pump. Finally, the mixed gas of the above-mentioned reaction product gas and particles is inhaled by the wet scrubbing device to further form microbubbles in the cleaning liquid, so that the cleaning liquid fully dissolves the above-mentioned reaction product gas and captures the particles carried by the above-mentioned reaction product gas.

Among them, the vacuum pumping device is a two-stage vacuum device, and its first pump is installed between the process waste gas source and the plasma treatment device, so as to use the first pump to isolate the reaction-generated gas and particles obtained after the low-pressure plasma treatment, Prevent its backflow from contaminating the process exhaust gas source.

Among them, the process exhaust gas will be converted into a stable and safe gas by the plasma treatment device before being sucked into the second pump, or gas that can be effectively treated by the wet scrubbing device connected behind, so the second pump (dry pump) in the old technology Measures that require the input of large flows of purge gas (such as nitrogen) to dilute flammable, corrosive or highly toxic process off-gases can be operated with a significant reduction in volume.

Among them, the plasma processing device is switched between the standby state and the operating state according to the control signal. When the process exhaust gas source starts to discharge the process exhaust gas, the plasma processing device is switched from the standby state to the operating state so as to treat in the first low pressure environment. The process exhaust gas is treated with low-pressure plasma. When the process exhaust gas source stops discharging the process exhaust gas, the plasma treatment device switches from the operating state to the standby state.

Wherein, when the plasma treatment device performs low-pressure plasma treatment on the process waste gas, the process waste gas is firstly mixed with the reaction gas according to the above-mentioned control signal.

Wherein, the plasma processing device is a plasma processing chamber and a mixer is used as a reaction gas supply chamber for introducing reaction gas, so that the reaction gas is mixed with process exhaust gas.

Among them, the process exhaust gases are perfluorocarbons (PFCs), nitrogen oxides (NO _x ), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride (NF ₃ ), ammonia (NH ₃ ), boroethane ( B ₂ H ₆ ), Hydrofluorocarbons (HFCs), Hydrocarbons (C _x H _y ) and/or CCl ₄ etc.

Wherein, if the semiconductor process is an atomic layer deposition (ALD) process, the process waste gas is trimethylaluminum (TMA), tetrakis(ethylmethylamino)zirconium (TEMAZ) and/or tetrakis(ethylmethylamino)zirconium (TEMAZ) and/or tetrakis(ethylmethylamino)zirconium (TEMAZ) Amino) hafnium (TEMAH).

Wherein, the reaction gas may be oxygen (O ₂ ), helium (He), argon (Ar), nitrogen (N ₂ ), hydrogen (H ₂ ) and/or water (H ₂ O).

Wherein, the first pump of the vacuum suction device is a booster pump (Booster Pump), and the second pump of the vacuum suction device is a dry pump (Dry Pump).

Wherein, the air pressure of the first low-pressure environment generated by the first pump of the vacuum pumping device is 100 torr to 10 ^{- 3} torr.

Wherein, the air pressure of the second low-pressure environment generated by the second pump of the vacuum pumping device is 100 torr to 10 ^{- 3} torr.

Wherein, the waste gas cleaning treatment device is a jet-type microbubble wet waste gas cleaning device, and the pressure of the third low-pressure environment generated by it is 400 to 600 torr.

Among them, the exhaust gas washing treatment device is a jet-type microbubble wet exhaust gas washing device, which includes: the treatment tank includes an inner tank and an outer tank for containing washing liquid; and a jet tube, wherein the washing liquid is sprayed into the inner tank of the treatment tank In the tank, the above-mentioned reaction gas is cut to form micro-bubbles to dissolve in the washing liquid, and then the water vapor of the washing liquid raised by the micro-bubbles overflows into the outer tank.

Wherein, the plasma processing device is a radio frequency plasma generation source, a microwave plasma generation source or a high voltage discharge source.

Wherein, the plasma processing device is a microwave plasma generating source with a coaxial microwave resonant cavity.

Wherein, the microwave plasma generation source includes a microwave source and a metal coupling antenna coaxially arranged, a ceramic tube and a hollow cylinder, wherein the ceramic tube is located at the center of the cylinder and the metal coupling antenna is located at the center of the ceramic tube, and the microwave source is arranged on the ceramic tube and located on one side of the metal-coupled antenna.

Wherein, the power of the microwave plasma generating source is between 1,000W and 5,000W.

Wherein, the process exhaust gas source is a semiconductor process chamber or a turbo vacuum pump connected to the semiconductor process chamber to discharge the process exhaust gas.

Based on the above, the semiconductor waste gas treatment system of the present invention adopts a low pressure (low pressure) plasma treatment device, which has the following advantages:

(1) The vacuum pumping device can generate a first low-pressure environment to extract the process waste gas generated by the process waste gas source, the vacuum pumping device can form a second low-pressure environment between the first pump and the second pump, and the plasma treatment device can At the same time, the second low-pressure environment is used to perform low-pressure plasma treatment on process waste gas. In addition, the plasma treatment device can be switched from the standby state to the running state only when the process exhaust gas starts to be discharged, so as to save energy.

(2) The exhaust gas scrubbing device is a jet-type microbubble wet exhaust gas scrubber, which can convert the reaction gas obtained after low-pressure plasma treatment into microbubbles when the scrubbing liquid is sprayed at high speed, greatly increasing the contact area and contact time , helps to dissolve the above-mentioned reaction gas and capture particles, and at the same time can generate a rough vacuum (rough vacuum) state between about 400torr and 600torr at the air inlet, so as to effectively extract air from the connected vacuum pumping device Inhaling the above-mentioned reaction-generated gas and particles for washing can also avoid clogging of the vacuum pumping device, improve the operating efficiency of the vacuum pumping device and reduce the required power.

(3) By setting up the plasma treatment device to treat the process exhaust gas before the harmful process exhaust gas enters the second pump (dry pump), it can greatly reduce the introduction of nitrogen gas to dilute toxic gases or even eliminate the need to introduce nitrogen gas, thus reducing nitrogen oxidation The production of pollutants and carbon dioxide can be avoided to avoid secondary pollution, and the required operating specifications can be reduced, such as suction power and flow rate.

(4) By introducing corresponding reaction gases, such as oxygen and water vapor, stable precursors such as oxides can be formed, which can effectively make the more difficult-to-handle process waste gas form easier-to-handle reaction gas, and miniaturize the particles , and even eliminate particles, thereby reducing toxic gases and greenhouse gases.

(5) The plasma treatment device is installed after the first pump of the vacuum exhaust device, which can effectively prevent the reaction gas and particles obtained after the low-pressure plasma treatment from flowing back into the process exhaust gas source, and the second pump and exhaust gas cleaning treatment The device can also provide negative pressure suction, which is more helpful for the above-mentioned reaction gas and particles to flow back into the process exhaust gas source and prevent clogging.

(6) The plasma treatment device can effectively decompose the chemical bond of the precursor of the atomic layer deposition (ALD) process, and can make the above-mentioned reaction gas into the gas phase to reduce the possibility of particle generation, so the maintenance period can be effectively extended.

(7) The plasma processing device can use the structure of coaxial microwave resonant cavity, which has the advantage of prolonging the reaction length of microwave and plasma to achieve the goal of uniform distribution of plasma. The power used is, for example, between 1,000W and 5,000W, depending on the type and flow of waste gas to be treated.

Here, in order to enable the examiner to have a further understanding and understanding of the technical features of the present invention and the technical effects that can be achieved, preferred embodiments and detailed descriptions are provided below.

Description of drawings

Fig. 1 is a schematic diagram of a semiconductor waste gas treatment system of the present invention.

FIG. 2 is a schematic diagram of the application of the semiconductor waste gas treatment system of the present invention to process process waste gas.

Fig. 3 is a schematic diagram of a jet-type micro-bubble wet waste gas scrubbing device used in the waste gas cleaning treatment device of the present invention.

Fig. 4 is a schematic diagram of a microwave plasma generating source used in the plasma treatment device of the present invention, wherein Fig. 4(B) is a schematic diagram obtained along the I-I' section line of Fig. 4(A).

Fig. 5 is a schematic diagram of applying the semiconductor waste gas treatment concept of the present invention to retrofit the existing waste gas treatment system.

Explanation of reference signs:

10: Semiconductor waste gas treatment system 56: Gas-liquid separation components

12: Process exhaust gas 57: Emission channel

14: Reaction gas 58: Water pump

16: Reaction gas 59: Washing liquid

20: Process exhaust gas source 60: Mixer

30: Vacuum pumping device 61: Mixing chamber

32: First pump 60a: First intake port

32a: Intake port 60b: Exhaust port

32b: exhaust port 60c: second intake port

34: Second pump 72: Suction chamber

34a: Intake port 74: Injection pipe

34b: Exhaust port 76: Mixing tube

40: Plasma treatment device 78: Diffusion tube

42: Plasma channel a1: First pipe

42a: Inlet port a2: Second pipe

50: Exhaust gas washing treatment device a3: The third pipe fitting

50a: Inlet port a4: Fourth pipe

51: Negative pressure jet tube 80: Control signal

52: Gas lines 1, 2, 3, 4: Pipes

53: inner tank 5: microwave source

54: Outer slot 6: Antenna

55: filter assembly 7: ceramic tube

8: Cylindrical

I-I': hatching

Detailed ways

In order to facilitate the understanding of the technical features, content and advantages of this creation and the effects it can achieve, this creation is hereby combined with the accompanying drawings, and described in detail in the form of embodiments as follows, and the accompanying drawings used herein, its gist It is only for illustration and auxiliary instructions, and may not be the true proportion and precise configuration of this creation after implementation. Therefore, the scale and configuration relationship of the attached drawings should not be interpreted to limit the scope of rights of this creation in actual implementation. In addition, for ease of understanding, the same components in the following embodiments are described with the same symbols.

In addition, the terms used in the entire specification and patent claims generally have the ordinary meanings of each term used in this field, in the disclosed content and in the special content, unless otherwise specified. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the invention.

Regarding the use of "first", "second", "third", etc. in this article, it does not specifically refer to the meaning of sequence or order, nor is it used to limit this creation, but it is only for the purpose of distinguishing between components or operations only.

Secondly, if the words "comprising", "including", "having", "containing" etc. are used in this article, they are all open terms, meaning including but not limited to.

Please refer to Figures 1 to 5, Figure 1 is a schematic diagram of the semiconductor waste gas treatment system of the present invention, Figure 2 is a schematic diagram of the semiconductor waste gas treatment system of the present invention applied to process waste gas, and Figure 3 is a schematic diagram of the waste gas cleaning treatment device of the present invention. A schematic diagram of a jet-type microbubble wet waste gas scrubber, Figure 4 is a schematic diagram of a microwave plasma generation source of the present invention, and Figure 5 is a schematic diagram of the application of the semiconductor waste gas treatment concept of the present invention to the transformation of an existing waste gas treatment system.

As shown in FIGS. 1 to 3 , the semiconductor waste gas treatment system 10 of the present invention is composed of a vacuum pumping device 30 , a plasma treatment device 40 and a waste gas washing treatment device 50 . When applied to process exhaust gas, the present invention connects the exhaust end of the process exhaust gas source 20 with a vacuum exhaust device 30, and the vacuum exhaust device 30 can be generated between the process exhaust gas source 20 and the vacuum exhaust device 30 during operation. The first low-pressure environment can suck the process exhaust gas 12 generated by the process exhaust gas source 20 by generating a negative pressure. The plasma processing device 40 is arranged on the vacuum pumping device 30 (between the first pump 32 and the second pump 34), and the process exhaust gas is treated by the second low-pressure environment between the first pump 32 and the second pump 34. Performing low-pressure plasma treatment, so that the process waste gas 12 that is originally difficult to handle becomes a reaction product gas 16 that is easier to handle, so that it is easier to dissolve in the cleaning solution, and the particles carried by the process waste gas 12 are miniaturized, and even the particles are eliminated. To prevent clogging and easier to be caught. Therefore, the present invention can greatly reduce or eliminate the need to dilute the process exhaust gas. Since the gas flow rate becomes lower, the operating specifications of the vacuum pumping device 30, such as pumping power and/or pumping rate, can be greatly reduced. At the same time, the first pump 32 of the vacuum suction device establishes the isolation between the plasma treatment device 40 and the process exhaust gas source 20, so that the reaction product gas 16 or particles obtained after the low-pressure plasma treatment cannot flow back to the process exhaust gas source 20 to cause pollution. The waste gas cleaning treatment device 50 can generate a third low-pressure environment (between the second pump 34 and the waste gas cleaning treatment device 50) during operation, and the reaction product gas 16 obtained after the low-pressure plasma treatment can be effectively inhaled by generating negative pressure, In order to prevent clogging and backflow, and the reaction gas 16 can be converted into microbubbles by the washing liquid, by greatly increasing the contact area and contact time, the washing liquid can fully dissolve the reaction gas 16 and the particles it carries.

In detail, the aforementioned process exhaust gas source 20 is, for example, a semiconductor process chamber for conducting semiconductor manufacturing processes, and the process exhaust gas 12 is, for example, the exhaust gas discharged from the aforementioned semiconductor manufacturing process, such as toxic exhaust gas or greenhouse gas, etc. The present invention is not limited to a specific semiconductor process chamber and the type of semiconductor process implemented therein, as long as the process exhaust gas 12 is generated, the semiconductor exhaust gas treatment system 10 of the present invention can be used for exhaust gas treatment. For example, depending on the actual semiconductor manufacturing process, the process exhaust gas source 20 of the present invention can be not only a semiconductor process chamber, but also a semiconductor process chamber equipped with a turbo pump (Turbo Pump) to discharge process exhaust gas. system. In other words, the process exhaust gas sources 20 applicable to the semiconductor waste gas treatment system 10 of the present invention are not limited to the above-mentioned examples, and any exhaust gas sources that emit semiconductor process exhaust gases are applicable to the present invention. Wherein, the process exhaust gas 12 is the process exhaust gas generated in the semiconductor manufacturing process, such as, but not limited to, perfluorocarbons (PFCs), nitrogen oxides (NOx), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride ( Toxic or greenhouse gases such as NF ₃ ), ammonia (NH ₃ ), boroethane (B ₂ H ₆ ), hydrofluorocarbons (HFCs) and/or hydrocarbons (C _x H _y ). If the above-mentioned semiconductor process is an atomic layer deposition (Atomic layer deposition, ALD) process, the process exhaust gas is, for example, but not limited to, trimethylaluminum (TMA), tetrakis (ethylmethylamino) zirconium (TEMAZ) and/or Or tetrakis(ethylmethylamino)hafnium (TEMAH).

In detail, the vacuum pumping device 30 of the semiconductor waste gas treatment system 10 of the present invention includes, for example, a two-stage combination of a first pump 32 and a second pump 34 connected to each other. The intake end 32a of the first pump 32 is connected to the exhaust end of the process exhaust gas source 20 through the first pipe a1, and a first low-pressure environment is generated in the first pipe a1 (that is, between the first pump 32 and the process exhaust gas source 20). The process exhaust gas 12 generated by the process exhaust gas source 20 is extracted. The exhaust end 32b of the first pump 32 communicates with the mixer 60 , the plasma treatment device 40 and the intake end 34a of the second pump 34 through the second pipe a2 . The second pump 34 of the vacuum pump 30 establishes a second low-pressure environment between the first pump 32 and the second pump 34 . Wherein, the air pressure of the first low pressure environment generated by the first pump 32 is, for example, about 100 torr to 10 ^-3 torr, and the air pressure of the second low pressure environment generated by the second pump 34 is, for example, about 100 torr to 10 ^-3 torr. For example, the working pressure range of the first pump 32 is, for example, about 100 torr to 10 ⁻³ torr, and the working pressure range of the second pump 34 is, for example, about 100 torr to 10 ⁻³ torr. The first pump 32 is, for example, a booster pump, and the second pump 34 is, for example, a dry pump. In addition to using the first pump 32, the vacuum pump 30 of the present invention also adds a second pump 34, thereby providing auxiliary suction and helping to accelerate the required vacuum level, while the first pump 32 isolates the vacuum. The gas and particles in the second pipe a2 flow back to the process exhaust gas source 20 . Although the air pressure ranges of the first low-pressure environment and the second low-pressure environment of the vacuum pumping device 30 and the working pressure ranges of the first pump 32 and the second pump 34 are listed above, the scope of the present invention is not limited thereto, as long as the pump can provide The low-pressure environment falls within the scope of protection claimed by the present invention.

In other words, the plasma treatment device 40 of the semiconductor waste gas treatment system 10 of the present invention is arranged between the first pump 32 and the second pump 34 of the vacuum pump 30, so that before the process waste gas enters the second pump 34, the electric The plasma treatment device 40 first uses the second low-pressure environment generated by the second pump 34 to perform low-pressure plasma treatment on the difficult-to-treat process waste gas, so as to convert the process waste gas into a more easily-handled reaction product gas 16 and miniaturize the process waste gas Carried particles, so the present invention can greatly reduce the required purge gas (such as nitrogen) of the second pump 34 to dilute the process exhaust gas, greatly reducing the power required for pumping; meanwhile, it can also prevent the vacuum pumping device from generating tiny clogged. Moreover, the vacuum exhaust device 30 establishes isolation between the plasma treatment device 40 and the process exhaust gas source 20 , so that the reaction gas 16 or particles cannot flow back to the process exhaust gas source 20 to cause pollution.

In addition, the plasma processing device 40 of the present invention can selectively switch between the standby state and the operating state according to the control signal 80 . For example, when the process exhaust gas source 20 starts to discharge the process exhaust gas 12, the plasma treatment device 40 is switched from the standby state to the operating state so as to perform low-pressure plasma treatment on the process exhaust gas 12 in the second low pressure environment; when the process exhaust gas source 20 stops When the process exhaust gas 12 is discharged, the plasma treatment device 40 is switched from the operating state to the standby state, and does not need to be kept running at all times, thus saving energy.

Specifically, the plasma processing device 40 of the present invention provides a plasma channel 42 connected between the exhaust end 32b of the first pump 32 of the vacuum pumping device 30 and the intake end 34a of the second pump 34 , such as detachable or fixed on the second pipe a2. Wherein, the process exhaust gas 12, for example, first mixes at least one reaction gas 14 corresponding to the process exhaust gas 12, and then passes through the plasma channel 42, so that the process exhaust gas 12 and the reaction gas 14 react with the plasma in the plasma channel 42, so that The process exhaust gas 12 is converted into at least one reaction product gas 16, and the particles carried by the process exhaust gas 12 are miniaturized, or even completely removed. The type of the reactive gas 14 corresponds to the above-mentioned process exhaust gas 12, that is, the type of the reactive gas 14 is determined by the process exhaust gas 12, so that the process exhaust gas 12 and the reactive gas 14 react with plasma to form a predetermined reaction gas 16. The above-mentioned reactive gas 14 is, for example, oxygen (O ₂ ), helium (He), argon (Ar), nitrogen (N ₂ ), hydrogen (H ₂ ) and/or water (H ₂ O) and the like. The reaction gas 16 obtained after the low-pressure plasma treatment is a harmless, stable or water-soluble gas that is easier to handle. For example, the treatment efficiency (Destruction Removal Efficiency, DRE) can exceed 90% by passing water gas into the mixed gas of CH ₄ and CHF ₃ . For example, NF ₃ is treated by mixing water and air. The water gas is dissociated into active particles of O, H, and OH by electrons in the plasma, and they can react with the NF _x particles of NF ₃ dissociated by the plasma. For example: OH+ _NF2 →NOF+HF, H+NF→N+HF, H+F→HF. However, HF can be effectively treated by wet scrubbing. Taking the radio frequency plasma generation source as an example, the electrode structure of the plasma processing device 40 can be, for example, columnar, plate-shaped, or mesh-shaped, as long as the plasma channel 42 with plasma can be formed, it can be applied to the present invention.

In addition, the present invention can selectively introduce the above-mentioned reaction gas 14 through the mixer 60 according to the control signal 80 at the same time, that is, when the process exhaust gas source 20 starts to discharge the process exhaust gas 12, the reaction gas 14 is introduced, wherein the plasma treatment The plasma channel 42 of the device 40 is connected to the mixer 60 , and the process exhaust gas 12 first mixes the reaction gas 14 through the mixer 60 and then enters the plasma channel 42 for reaction. The mixer 60 is, for example, disposed on the second tube a2 and disposed in front of the inlet end 42 a of the plasma channel 42 of the plasma processing device 40 . That is, the mixer 60, for example, has a first inlet port 60a, a second inlet port 60c and an exhaust port 60b connected to the mixing chamber 61, wherein the first inlet port 60a of the mixer 60 is connected to the exhaust port of the first pump 32. The gas end 32b is used to introduce the process exhaust gas 12 , and the exhaust end 60b of the mixer 60 is connected to the intake end 42a of the plasma channel 42 of the plasma processing device 40 to export the mixed process exhaust gas 12 and reaction gas 14 . Wherein, the mixer 60 has, for example, a fourth pipe a4, and one end of the fourth pipe a4 communicates with the mixing chamber 61 of the mixer 60, and the other end of the fourth pipe a4 has a second inlet port 60c for introducing the reaction gas 14 , so that the process exhaust gas 12 can be uniformly mixed with the reaction gas 14 in the mixing chamber 61 . Wherein, the form and size of the mixer 60 and its mixing chamber 61 are not particularly limited, as long as the process exhaust gas 12 can be mixed with the reaction gas 14 , it can be applicable to the present invention. In addition, the mixer 60 used in the present invention may also have regulating valves (not shown) provided at the first inlet port 60a and the second inlet port 60c, for example, to adjust the corresponding supply of the process exhaust gas 12 and the reaction gas 14 amount for better response. In other words, the present invention can integrate the control signal 80 to ensure that the operation mode of activating the plasma and inputting the mixed reaction gas is only when there is process waste gas to be treated, so as to save energy and increase the service life of the plasma system.

Taking the plasma processing device 40 as the microwave plasma generation source, the microwave plasma processing device shown in Figure 4 is an example, wherein the mixed gas of the process exhaust gas 12 and the reaction gas 14 is discharged from the exhaust end 60b of the mixer 60, and Entering the cylindrical microwave resonance cavity through pipeline 1 and pipeline 2 , high-power microwaves (about 1,000W to about 5,000W) dissociate the mixed gas into a plasma state in the plasma channel 42 . Under low pressure, electrons can obtain enough energy to collide with gas molecules for dissociation reactions, and at the same time, the molecules, atoms and activated particles produced also produce various chemical and physical reactions, thereby achieving the goal of waste gas treatment. The reaction gas 16 obtained after the low-pressure plasma treatment enters the second pump 34 through the pipeline 3 and the pipeline 4 . In detail, the cylindrical microwave resonant cavity of the microwave plasma generation source includes a coaxially arranged metal coupling antenna 6, a ceramic tube 7 and a cylinder 8, wherein the ceramic tube 7 is located at the center of the hollow cylinder 8 and the antenna 6 is located at the center of the ceramic tube 7. The center of the microwave source 5 is set on the ceramic tube 7 and is located on one side of the antenna 6 .

The above-mentioned microwave plasma treatment device uses a coaxial microwave resonant cavity structure, which has the advantage of prolonging the reaction length between microwave and plasma to achieve uniform distribution of plasma. In general, the plasma of a cylindrical or rectangular microwave resonator tends to concentrate near the entrance, which cannot effectively form a uniform plasma. Coaxial microwave distribution is achieved by microwave source 5 via metal coupled antenna 6 and ceramic tube 7 and outer cylinder 8 . The ceramic tube 7 can effectively transmit microwaves on the antenna 6 without causing the microwave source coupling plasma reaction to concentrate near the entrance, and also achieve the functions of isolating the vacuum and protecting the antenna 6 from being damaged by the plasma. However, the type of the plasma processing device 40 of the present invention is not limited to the above-mentioned microwave plasma generation source, and any existing technology such as a radio frequency plasma generation source or a high-voltage discharge source, etc. can be used, as long as the plasma channel can be formed in a low-pressure environment 42 and reacting the process waste gas 12 with the reaction gas 14 are applicable to the present invention.

The waste gas cleaning treatment device 50 of the semiconductor waste gas treatment system 10 of the present invention uses the Venturi tube (Venturithroat) principle to make the jet structure eject the cleaning liquid 59, and the above-mentioned third step is generated between the second pump 34 and the waste gas cleaning treatment device 50. In a low-pressure environment, the reaction-generated gas 16 obtained after inhaling the low-pressure plasma treatment is used, and the reaction-generated gas 16 is converted into microbubbles. By greatly increasing the contact area and contact time, the washing liquid can fully dissolve the reaction-generated gas 16 and By capturing particles, the invention can prevent the clogging of the vacuum pumping device, effectively prolong the maintenance cycle, and prevent backflow pollution, so it can save energy, protect the environment and treat process exhaust gas stably. In detail, as shown in FIG. 3 , the exhaust gas scrubber 50 used in the present invention is an example of a jet-type micro-bubble wet exhaust scrubber adopting the principle of a Venturi tube. Wherein, the exhaust gas cleaning treatment device 50 uses the negative pressure jet pipe 51 to spray the cleaning liquid 59 longitudinally at high speed and generates a third low pressure environment (a negative pressure of about 400 torr to 600 torr), so as to use the third pipe a3 to suck the process exhaust gas through the second pump 34 The converted reaction of 12 produces gas 16 . The volume of the washing liquid 59 is, for example, about 50% to 90% of the volume of the inner tank 53 of the treatment tank, preferably about 60% to 80%, more preferably about 70%. And when cleaning solution 59 is by the cleaning solution 59 in the inner tank 53 of negative pressure jet pipe 51 high-speed downward impact treatment tanks, reaction product gas 16 will be cut and form a plurality of microbubbles (average) in cleaning solution 59 diameter less than about 1.0 mm), its size is much smaller than traditional bubbles, so the surface area is much larger than traditional bubbles, and in the process of microbubbles moving up from the depth of the washing liquid 59 in the inner tank 53 of the treatment tank, due to the contact area and contact The time is greatly increased, so that the microbubbles can fully contact the washing liquid 59 . Because the gas 16 generated by the reaction will be dissolved in the washing liquid 59 , the microbubbles will gradually shrink in volume during the rising process, and then disappear in the washing liquid 59 . The water vapor of the washing solution 59 raised by the microbubbles will overflow into the outer tank 54 . The scrubbing liquid 59 contains chemicals for treating the corresponding reaction gas 16 . The chemical is, for example but not limited to, selected from the group consisting of saline solution, sodium hydroxide, calcium hydroxide, calcium carbonate, and sodium bicarbonate. That is, the composition of the scrubbing liquid 59 can be determined by the reaction product gas 16 to be treated, and a suitable base can be used for neutralization to reduce the formation of an acidic solution, such as fresh water and sodium hydroxide or other neutralizing agents (such as lime) The resulting solution can effectively extract and neutralize large quantities of HCl, SO ₂ or other acid-containing components in the reaction gas 16 . Calcium hydroxide (Ca(OH) ₂ ), calcium carbonate (CaCO ₃ ) and/or sodium bicarbonate (NaHCO ₃ ), for example, may also be mixed with scrubber 59 to help absorb other acidic process off-gases from various production sources . Therefore, when the microbubbles contact the washing liquid 59 , the reaction gas 16 can be fully dissolved in the washing liquid 59 , and the washing liquid 59 can sufficiently capture the microparticles.

Subsequently, the washed gas that has not been dissolved by the washing liquid 59 diffuses to the liquid surface of the inner tank 53 along with the washing liquid 59 to form water vapor, so the gas-liquid separation component 56 above the inner tank 53 can act as a filter and capture water vapor. role and only allows the above-mentioned scrubbed gas to pass through the gas-liquid separation assembly 56, so the dried scrubbed gas that has been treated can be discharged from the discharge channel 57, for example, to the central exhaust gas treatment system. In addition, the above-mentioned gas-liquid separation component may also be added in the discharge channel 57 to discharge drier scrubbed gas by capturing moisture. The above-mentioned gas-liquid separation component 56 can be any structure capable of separating liquid and gas, such as a fiber bed demister made of glass fibers with a diameter of about 100 microns to 1 micron, so as to filter water vapor and only allow gas to pass through it . As for, the washing liquid 59 blocked by the gas-liquid separation assembly 56 will fall into the outer tank 54 . Subsequently, can for example utilize filtering assembly 55 to filter the washing solution 59 in the outer tank 54 of the treatment tank, and then utilize the water pump 58 to filter the washing solution 59 in the outer tank 54, and inject the inner tank of the treatment tank through the negative pressure jet pipe 51 again 53 , a plurality of microbubbles are formed in the cleaning liquid 59 by cyclically generating negative pressure and cutting the reaction-generated gas 16 .

The above-mentioned negative pressure jet pipe 51 has, for example, a suction chamber 72 and an injection pipe 74. The side wall of the suction chamber 72 has at least one suction port for communicating with the third pipe member a3 via the gas pipeline 52. The top of the injection pipe 74 is an inlet. It is used for injecting the washing liquid 59 . The bottom end of the injection pipe 74 is an outlet extending to the inside of the suction chamber 72 to generate negative pressure suction by spraying the washing liquid 59 into the suction chamber 72 . The gas pipeline 52 can be installed on the side wall of the suction chamber 72 vertically or inclined, and the gas pipeline 52 is preferably installed on the side wall of the suction chamber 72 obliquely. Wherein, the bottom of suction chamber 72 is connected with mixing pipe 76 and diffusion pipe 78 in sequence, and mixing pipe 76 and/or diffusion pipe 78 are immersed in the washing liquid 59 of inner tank 53, preferably can make microbubbles pass to The momentum of the lower jet impact reaches the bottom of the inner tank 53, and then moves upwards from the bottom, so as to increase the time for the microbubbles to contact the washing liquid 59. The time for the microbubbles to pass through the washing liquid 59 is, for example, about 1 to 20 seconds, preferably for about 1 to 10 seconds. In addition, the chamber wall of the suction chamber 72 and/or the gas pipeline 52 may optionally have a cleaning member, such as a nozzle, for example, after spraying the washing liquid 59 first, and then spraying air, so as to clean the chamber wall The effect of inside, and can keep the chamber wall of suction chamber 72 and/or gas pipeline 52 dry. In addition, the cleaning element is preferably sprayed into the suction chamber 72 and/or the gas pipeline at a high speed in sequence along the tangential direction of the wall of the suction chamber 72 and/or the gas pipeline 52 and slightly inclined. 52, so as to generate a spiral air flow flowing along the suction chamber 72 and/or the gas pipeline 52 from top to bottom, which can effectively prevent the generation of deposits.

Since the process waste gas generated by the semiconductor process will carry a large amount of particles, in order to avoid clogging, such as the clogging of the vacuum pumping device, the traditional technology must use a large amount of purge gas (such as nitrogen) to dilute the pumping gas (ie process waste gas). Therefore, it is necessary to use an air pump with a higher operating specification for air extraction, which virtually increases operating costs and consumes energy. Compared with the traditional technology, the present invention can greatly reduce or eliminate the need to dilute the process exhaust gas, and can also greatly reduce the required operating specifications, such as pumping power or pumping rate. In the present invention, before the process exhaust gas enters the second pump 34, the plasma treatment device 40 pre-treats the process exhaust gas 12, which can effectively decompose the chemical bonds of the precursors to reduce the possibility of generating particles, and make the reaction product gas 16 into a gas phase. In other words, the present invention not only converts the process exhaust gas 12 into a harmless, stable or easily soluble reaction gas 16 in the cleaning solution, but also reduces the size of the solid particles so that they can be easily captured by the cleaning solution, and even completely remove the particles , so the present invention is not prone to clogging. It can be seen that the present invention can adopt lower pumping power, and can prolong the maintenance cycle, and prevent secondary pollution of the environment, and the semiconductor waste gas treatment system of the present invention performs plasma treatment under low pressure conditions, and the component damage rate lower and more stable. Therefore, the present invention can achieve the effects of energy saving, environmental protection and stable treatment of process waste gas.

In addition, the exhaust gas washing treatment device 50 of the present invention can not only process the reaction gas 16, but also generate a third low-pressure environment, which can provide negative pressure suction, reduce the power required for the operation of the vacuum pumping device 30, and avoid The vacuum suction device 30 is blocked. In detail, the intake port 50a of the exhaust gas scrubbing device 50 communicates with the exhaust port 34b of the second pump 34 of the vacuum pumping device 30 to inhale the reaction gas 16 via the third pipe a3. Wherein, the exhaust gas scrubbing device 50 is, for example, a wet exhaust gas scrubbing processor and/or a dry exhaust gas scrubbing processor. The exhaust gas cleaning treatment device 50 of the present invention is preferably a wet exhaust gas scrubber that can provide negative pressure suction, and is more preferably a jet-type microbubble wet exhaust gas scrubber, which can generate a rough vacuum state (about 400 torr to 600torr). Three low pressure environment. Since the exhaust gas cleaning treatment device 50 is in communication with the second pump 34, the negative pressure suction generated by the exhaust gas cleaning treatment device 50 between the second pump 34 and the exhaust gas cleaning treatment device 50 can provide auxiliary suction, which helps the reaction generated gas 16 to pass through The second pump 34 discharges into the exhaust gas scrubbing treatment device 50 . In other words, through the negative pressure suction generated by the exhaust gas cleaning treatment device 50, the present invention can prevent the reaction product gas 16 and particles from backflow after the low-pressure plasma treatment, and can prevent the second pump 34 from clogging, and alleviate The required power for the vacuum pumping device 30 to operate.

In addition, according to the semiconductor waste gas treatment concept of the present invention, as shown in Figure 5, the present invention can be applied to transform the existing waste gas treatment system, for example, the existing semiconductor vacuum pump can be refitted, and the booster pump ( That is, the first pump 32) and the dry pump (that is, the second pump 34), adding a gas mixer (that is, a mixer 60) and a plasma treatment device 40, and adding a jet-type microbubble wet exhaust gas scrubber to form a local exhaust gas treatment system. Replace the existing electrothermal or combustion local exhaust gas treatment system.

In summary, the semiconductor waste gas treatment system of the present invention adopts a low pressure (low pressure) plasma treatment device, which has the following advantages:

(1) The vacuum pumping device can generate a first low-pressure environment to extract the process waste gas generated by the process waste gas source, the vacuum pumping device can form a second low-pressure environment between the first pump and the second pump, and the plasma treatment device At the same time, the second low-pressure environment can be used to perform low-pressure plasma treatment on process waste gas. In addition, the plasma treatment device can be switched from the standby state to the running state when the process exhaust gas starts to be discharged, so as to save energy.

(2) The exhaust gas scrubbing device is a jet-type microbubble wet exhaust gas scrubber, which can convert the reaction gas obtained after low-pressure plasma treatment into microbubbles when the scrubbing liquid is sprayed at high speed, greatly increasing the contact area and contact time , helps to dissolve the above-mentioned reaction-generated gas and capture particles, and can generate a rough vacuum state between about 400torr and 600torr at the air inlet at the same time, so as to inhale the above-mentioned reaction-generated gas and particles for cleaning, and can also avoid vacuum The suction device is blocked, which improves the operating efficiency of the vacuum suction device and reduces the required power.

(3) By setting up the plasma treatment device to treat the process exhaust gas before the harmful process exhaust gas enters the second pump (dry pump), it can greatly reduce the introduction of nitrogen gas to dilute toxic gases or even eliminate the need to introduce nitrogen gas, thus reducing nitrogen oxidation The production of pollutants and carbon monoxide can be avoided to avoid secondary pollution, and the required operating specifications can be reduced, such as suction power and flow rate.

(4) By introducing corresponding reaction gases, such as oxygen and water vapor, stable precursors, such as oxides, can be formed, which can effectively make the difficult-to-treat process waste gas form easier-to-handle reaction gas, and miniaturize the particles, Even eliminates particulates to reduce toxic and greenhouse gases.

(5) The plasma treatment device is installed after the first pump of the vacuum exhaust device, which can effectively prevent the reaction gas and particles obtained after plasma treatment from flowing back into the process exhaust gas source, and the second pump and exhaust gas cleaning treatment device It can also provide negative pressure suction, which is more helpful to prevent the reaction gas and particles from flowing back into the process exhaust gas source and prevent clogging.

(6) The plasma treatment device can effectively decompose the chemical bond of the precursor of the atomic layer deposition (ALD) process, and can make the reaction gas into the gas phase to reduce the possibility of particle generation, so the maintenance cycle can be effectively extended.

(7) The plasma processing device can use the structure of coaxial microwave resonant cavity, which has the advantage of prolonging the reaction length of microwave and plasma to achieve the goal of uniform distribution of plasma. The power used is, for example, between 1,000W and 5,000W, depending on the type and flow of waste gas to be treated.

The above descriptions are illustrative only, not restrictive. Any equivalent modifications or changes made without departing from the spirit and scope of the present invention shall be included in the scope of the appended claims.

Claims (18)

1. A semiconductor waste gas treatment system is suitable for treating at least one process waste gas generated by a process waste gas source, and is characterized in that:

the semiconductor waste gas treatment system consists of a vacuum air pumping device, a plasma treatment device and a waste gas washing treatment device;

the vacuum pumping device adopts a two-section combination of a first pump and a second pump, the first pump generates a first low-pressure environment for pumping the process waste gas generated by the process waste gas source, and the second pump generates a second low-pressure environment between the first pump and the second pump;

wherein, the plasma processing device is arranged between the first pump and the second pump, so that before the process waste gas enters the second pump, the plasma processing device firstly carries out low-pressure plasma processing on the process waste gas under the second low-pressure environment, so as to convert the process waste gas into reaction generated gas and miniaturize or remove a plurality of particles carried by the process waste gas; and

wherein, the exhaust gas scrubbing device generates a third low-pressure environment between the second pump and the exhaust gas scrubbing device by ejecting a scrubbing liquid, so as to suck the reaction product gas and the particles obtained after the low-pressure plasma treatment through the second pump, and the scrubbing liquid ejected by the reaction product gas is cut into a plurality of micro-bubbles, so that the scrubbing liquid fully dissolves the reaction product gas and captures the particles carried by the reaction product gas.

2. The semiconductor waste gas treatment system of claim 1, wherein the first pump of the vacuum pumping device is disposed between the process waste gas source and the plasma treatment device, so as to isolate the reaction product gas obtained after the low-pressure plasma treatment and the particles carried by the reaction product gas by the first pump, thereby preventing the reaction product gas from generating a backflow to contaminate the process waste gas source.

3. The semiconductor exhaust gas treatment system according to claim 1, wherein the plasma treatment device is switched between a standby state and an operating state according to a control signal, the plasma treatment device is switched from the standby state to the operating state to perform the low-pressure plasma treatment on the process exhaust gas under the second low-pressure environment when the process exhaust gas source starts to discharge the process exhaust gas, and the plasma treatment device is switched from the operating state to the standby state when the process exhaust gas source stops discharging the process exhaust gas.

4. The system of claim 3, wherein the plasma treatment device is configured to perform the low pressure plasma treatment on the process exhaust while mixing the process exhaust with a reactive gas according to the control signal.

5. The semiconductor waste gas treatment system of claim 4, wherein the plasma treatment device utilizes a mixer to introduce the reactant gas, thereby mixing the reactant gas with the process waste gas.

6. The semiconductor exhaust treatment system of claim 1, wherein the process exhaust is Perfluorocarbons (PFCs), nitrogen oxides (NOx), sulfur hexafluoride (SF) ₆ ) Nitrogen trifluoride (NF) ₃ ) Ammonia (NH) ₃ ) Boron ethane (B) ₂ H ₆ ) Hydrofluorocarbons (HFCs), hydrocarbons (C) _x H _y ) And/or CCl ₄ 。

7. The semiconductor exhaust treatment system of claim 1, wherein the process exhaust source is trimethyl aluminum (TMA), tetra (ethylmethylamino) zirconium (TEMAZ), and/or tetra (ethylmethylamino) hafnium (TEMAH) if an Atomic Layer Deposition (ALD) process is performed.

8. The semiconductor exhaust gas treatment system according to claim 6 or 7, wherein the reaction gas is oxygen (O) ₂ ) Helium (He), argon (Ar), nitrogen (N) ₂ ) Hydrogen (H) ₂ ) And/or moisture (H) ₂ O)。

9. The semiconductor exhaust treatment system according to claim 1, wherein the first pump is a booster pump and the second pump is a dry pump.

10. The semiconductor waste gas treatment system of claim 1, wherein the first low pressure environment generated by the first pump of the vacuum pumping device has a pressure of 100torr to 10 torr ^-3 torr。

11. The semiconductor waste gas treatment system of claim 1, wherein the second low pressure environment generated by the second pump of the vacuum pumping device has a pressure of 100torr to 10 torr ^-3 torr。

12. The semiconductor exhaust gas treatment system according to claim 1, wherein the third low pressure environment is generated by the exhaust gas scrubbing treatment device at a pressure of 400torr to 600torr.

13. The semiconductor exhaust treatment system of claim 1, wherein the exhaust scrubbing treatment device comprises:

a treatment tank including an inner tank and an outer tank for containing the cleaning solution; and

the jet pipe is used for jetting the washing liquid into the inner tank of the treatment tank through the jet pipe so as to cut the reaction generated gas into the micro-bubbles to be dissolved in the washing liquid, and then the water vapor of the washing liquid pumped by the micro-bubbles is overflowed into the outer tank.

14. The semiconductor exhaust gas treatment system according to claim 1, wherein the plasma treatment device is a radio frequency plasma generation source, a microwave plasma generation source, or a high voltage discharge source.

15. The semiconductor exhaust gas treatment system according to claim 1, wherein the plasma treatment device is a microwave plasma generating source having a coaxial microwave resonant cavity.

16. The semiconductor exhaust gas treatment system according to claim 15, wherein the microwave plasma generating source comprises a microwave source and a metal-coupled antenna, a ceramic tube and a hollow cylinder coaxially disposed, wherein the ceramic tube is located at a center of the cylinder and the metal-coupled antenna is located at a center of the ceramic tube, and the microwave source is disposed on the ceramic tube and located at one side of the metal-coupled antenna.

17. The semiconductor waste gas treatment system of claim 15, wherein the power of the microwave plasma generating source is between 1,000W and 5,000W.

18. The semiconductor exhaust treatment system of claim 1, wherein the process exhaust source is a semiconductor processing chamber or a turbo vacuum pump coupled to the semiconductor processing chamber to exhaust the process exhaust.

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