CN115739822A - Dry etching method - Google Patents
Dry etching method Download PDFInfo
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- CN115739822A CN115739822A CN202211272272.8A CN202211272272A CN115739822A CN 115739822 A CN115739822 A CN 115739822A CN 202211272272 A CN202211272272 A CN 202211272272A CN 115739822 A CN115739822 A CN 115739822A
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- cavity
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- dry etching
- etching
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- 238000001312 dry etching Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 77
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- 238000007664 blowing Methods 0.000 claims abstract description 19
- 238000010926 purge Methods 0.000 claims description 20
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 62
- 239000007789 gas Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 30
- 230000000694 effects Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a dry etching method, which uses oxygen to generate free atoms in a cavity; blowing to remove the free atoms to obtain a cleaned cavity; performing dry etching on the wafer source in the cleaned cavity; after the dry etching is finished, nitrogen is used for blowing in the cavity, organic matters are removed by using oxygen free atoms in a chemical method, the substrate cannot be etched, etching residues are removed by blowing, nitrogen blowing is carried out after etching is finished, etching residual gas and etching products adsorbed on the surface of the wafer source are effectively removed, etching residual gas and etching products in the etching disc and the transmission cavity are removed, the wafer source is prevented from being adsorbed, and therefore etching pits on the surface of the wafer source are effectively removed.
Description
Technical Field
The invention relates to the technical field of semiconductor electronics, in particular to a dry etching method.
Background
Semiconductor chip pre-processing can generally be divided into four major processes, namely cleaning, photolithography, etching and film formation. The etching is divided into dry etching and wet etching, and the dry etching mainly uses etching gas (such as Cl) coupled by an induction coil 2 、BCl 3 、CF 4 Etc.) to generate high-density plasma, then utilizing active medium-sized reactive group generated in the plasma to generate chemical reaction with etched material, and simultaneously bombarding the surface of the sample by ions with energy to generate an etching mode of physical reaction. Therefore, the degree of substrate surface cleanliness has a direct effect on the post-etch appearance.
The etching equipment is provided with an upper cavity and a reaction cavity for improving the productivity, the upper cavity can be used for placing a plurality of discs of to-be-etched wafer sources, the to-be-etched wafer sources can be placed in the upper cavity for a long time and are influenced by residues of the upper cavity and residues of an etching disc, the etching residues are easily adsorbed on the surface of the wafer sources, etching pits appear after etching, and appearance abnormity is caused, as shown in a square frame in fig. 1. At present, most of etching residues are eliminated by increasing the cleaning of an etching disc and an upper wafer cavity so as to eliminate etching pits, and the defects are as follows: the cleaning operation takes a lot of time and the cleaning effect cannot be secured.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the dry etching method is provided, and can effectively remove etching pits on the surface of the wafer source.
In order to solve the technical problems, the invention adopts a technical scheme that:
a dry etching method comprises the following steps:
generating free atoms in the chamber using oxygen;
blowing to remove the free atoms to obtain a cleaned cavity;
performing dry etching on the wafer source in the cleaned cavity;
and after the dry etching is finished, purging the cavity by using nitrogen.
The invention has the beneficial effects that: the method comprises the steps of generating free atoms by using oxygen in a cavity, blowing and removing the free atoms to obtain a cleaned cavity, carrying out dry etching on a wafer source in the cleaned cavity, blowing and removing nitrogen in the cavity after the dry etching is finished, chemically etching organic matters by using the free atoms of the oxygen, not etching a substrate, then blowing and removing etching residues, blowing and removing the nitrogen after the etching is finished to effectively remove etching residual gas and etching products adsorbed on the surface of the wafer source, and removing an etching disc and transferring the etching residual gas and the etching products in the cavity to avoid adsorbing on the wafer source, thereby effectively removing etching pits on the surface of the wafer source.
Drawings
FIG. 1 is a schematic view of a surface of a wafer source with etched pits in the prior art;
fig. 2 is a flowchart of steps of a dry etching method according to an embodiment of the present invention.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, an embodiment of the present invention provides a dry etching method, including:
generating free atoms in the chamber using oxygen;
blowing to remove the free atoms to obtain a cleaned cavity;
performing dry etching on the wafer source in the cleaned cavity;
and after the dry etching is finished, purging the cavity by using nitrogen.
From the above description, the beneficial effects of the present invention are: the method comprises the steps of generating free atoms by using oxygen in a cavity, blowing and removing the free atoms to obtain a cleaned cavity, carrying out dry etching on a wafer source in the cleaned cavity, blowing and removing nitrogen in the cavity after the dry etching is finished, chemically etching organic matters by using the free atoms of the oxygen, not etching a substrate, then blowing and removing etching residues, blowing and removing the nitrogen after the etching is finished to effectively remove etching residual gas and etching products adsorbed on the surface of the wafer source, and removing an etching disc and transferring the etching residual gas and the etching products in the cavity to avoid adsorbing on the wafer source, thereby effectively removing etching pits on the surface of the wafer source.
Further, the generating free atoms within the cavity using oxygen includes:
introducing oxygen at a first preset flow rate into the cavity according to a first preset cavity pressure and first preset time;
and generating free atoms by using the oxygen according to a second preset cavity pressure, a second preset upper electrode, a second preset lower electrode and a second preset time.
As can be seen from the above description, oxygen is introduced first, then oxygen is utilized to generate free atoms, and organic matters can be effectively removed by utilizing the free atoms without damaging the substrate, thereby avoiding abnormal appearance of the film source.
Further, the first preset chamber pressure is set to 5 to 15mT, the first preset time is set to 5 to 20s, and the first preset flow rate is set to 80 to 200sccm.
As can be seen from the above description, the setting of the cavity pressure is only for removing air and water vapor in the cavity, the setting of the cavity pressure too low has higher requirements on the equipment, the setting of the cavity pressure to 5-15 mT can achieve the expected effect, and the introduction of oxygen of 80-200 sccm mainly ensures that the uniform oxygen concentration is present in the cavity and the subsequent generation of sufficient and uniform oxygen ions is ensured.
Further, the second preset cavity pressure is set to 10-15 mT, the second preset upper electrode is set to 100-600W, the second preset lower electrode is set to 18-100W, and the second preset time is set to 20-30 s.
From the above description, the power of the upper and lower electrodes is related to the ionization degree of oxygen, when a certain value is reached, the oxygen is fully ionized, and then the power is increased, so that no positive effect is generated on the ionization, therefore, the second preset upper electrode is set to 100-600W, the second preset lower electrode is set to 18-100W, the reaction can be fully completed according to the experimental data of 20s, and the time is set to 30s in combination with the influence of the capacity, so as to realize the optimal free atom generation effect.
Further, the purging removes the free atoms, and the obtaining of the cleaned cavity includes:
and introducing nitrogen with a third preset flow into the cavity, and blowing and removing the free atoms by using the nitrogen according to a third preset time to obtain the cleaned cavity.
As can be seen from the above description, the use of a nitrogen purge to remove free atoms enables the removal of the oxygen reacted species.
Further, the third preset flow rate is set to 200 to 1000sccm, and the third preset time is set to 90s.
From the above description, it can be seen that, since the reaction time is short, the amount of the generated residue is small, and the purging operation is not required to be repeated for 90 seconds, thereby achieving a better removal effect.
Further, after the dry etching is completed, purging with nitrogen gas in the chamber includes:
and (3) inflating: inflating the cavity by using nitrogen with a fourth preset flow according to a fourth preset time to obtain an inflated cavity;
air extraction operation: and exhausting the inflated cavity according to a fifth preset cavity pressure and fifth preset time to obtain the exhausted cavity.
As can be seen from the above description, the use of nitrogen gas for charging and exhausting can remove the etching residual gas and etching products in the etching disk and the transfer chamber, and reduce the adsorption on the wafer source.
Further, the fourth preset time is set to 60s, and the fourth preset flow rate is set to 200 to 1000sccm.
According to the description, no chemical reaction exists in the inflation process, the electrode power does not need to be set, the cavity pressure does not need to be set, the nitrogen flow is too small to remove residues on a film source or an etching disc easily, other waste is caused if the nitrogen flow is too large, and the optimal effect can be achieved if the nitrogen flow is set to be 200-1000 sccm.
Further, the fifth preset chamber pressure is set to 5 to 15mT, and the fifth preset time is set to 30s.
According to the description, the cavity pressure is set to be too high in the air exhaust process, air exhaust is incomplete, the cavity pressure of the machine is influenced by the Pump capacity, the productivity is wasted due to too long time setting, the incomplete air exhaust condition exists due to too short time setting, the cavity pressure is set to be 5-15 mT, the time is set to be 30s, and the optimal air exhaust effect is achieved.
Further, the purging with nitrogen gas within the cavity further comprises:
and repeatedly executing the inflation operation and the air extraction operation according to preset times.
According to the description, the cavity is repeatedly inflated and exhausted, so that residues can be removed more thoroughly, the residues are prevented from being adsorbed on the wafer source, and etching pits on the surface of the wafer source are effectively removed.
The dry etching method of the present invention can be applied to a scene where a substrate needs to be etched, and is described below by specific embodiments:
example one
Referring to fig. 1, a dry etching method of the present embodiment includes the steps of:
s1, generating free atoms in a cavity by using oxygen, and specifically comprising the following steps:
s11, introducing oxygen at a first preset flow rate into the cavity according to a first preset cavity pressure and first preset time;
the first preset cavity pressure is set to be 5-15 mT, the first preset time is set to be 5-20 s, the first preset flow is set to be 80-200 sccm, the upper electrode is set to be 0W, and the lower electrode is set to be 0W.
In an alternative embodiment, oxygen is introduced into the chamber at a flow rate of 110sccm for a chamber pressure of 10mT and a time of 10 s.
In another alternative embodiment, oxygen is introduced into the chamber at a flow rate of 80sccm at a chamber pressure of 5mT for a period of 5 s.
In another alternative embodiment, oxygen is introduced into the chamber at a flow rate of 200sccm at a chamber pressure of 15mT for a period of 20 s.
And S12, generating free atoms by using the oxygen according to a second preset cavity pressure, a second preset upper electrode, a second preset lower electrode and a second preset time.
Chemical removal of organic substances, O, by means of free oxygen atoms 2 + e + organic → 2O 2 +H 2 And O + e, the substrate cannot be etched, namely, the oxygen is ionized and then reacts with organic matters to produce carbon dioxide and water, and the carbon dioxide and the water can be taken away by subsequent purging, so that the effect of removing etching residues is realized.
The second preset cavity pressure is set to be 10-15 mT, the second preset upper electrode is set to be 100-600W, the second preset lower electrode is set to be 18-100W, the second preset time is set to be 20-30 s, the power of the upper electrode and the power of the lower electrode are related to the ionization degree of oxygen, when a certain value is reached, the oxygen is fully ionized, the power is increased, and no positive effect is generated on the ionization, so that the second preset upper electrode is set to be 100-600W, the second preset lower electrode is set to be 18-100W, the reaction can be fully completed according to the experimental data of 20s, and the capacity requirement can be met by setting the second preset upper electrode to be 30s.
In an alternative embodiment, the oxygen is used to generate free atoms at a chamber pressure of 10mT, an upper electrode of 300W, a lower electrode of 50W, and a time of 30s.
In another alternative embodiment, the oxygen is used to generate free atoms at a chamber pressure of 13mT, an upper electrode of 100W, a lower electrode of 18W, and a time of 20 s.
In another alternative embodiment, the oxygen is used to generate free atoms at a chamber pressure of 15mT, an upper electrode of 600W, a lower electrode of 100W, and a time of 25 s.
S2, blowing to remove the free atoms to obtain a cleaned cavity;
specifically, nitrogen with a third preset flow is introduced into the cavity, and the nitrogen is used for purging and removing the free atoms according to a third preset time, so that a cleaned cavity is obtained, and the substances after the oxygen reaction can be removed.
Wherein the third preset flow rate is set to 200-1000 sccm, the third preset time is set to 90s, the chamber pressure is set to 0mT, and the upper electrode and the lower electrode are both set to 0W.
In an alternative embodiment, nitrogen gas is introduced into the chamber at a flow rate of 200sccm, and the free atoms are removed by purging with the nitrogen gas for 90 seconds, resulting in a cleaned chamber.
In another alternative embodiment, the chamber is filled with 900sccm of nitrogen, and the nitrogen is used to purge the free atoms for 90s, resulting in a cleaned chamber.
In another alternative embodiment, the chamber is filled with 1000sccm of nitrogen, and the nitrogen is used to purge the free atoms for 90s, resulting in a cleaned chamber.
S3, performing dry etching on the wafer source in the cleaned cavity;
s4, after the dry etching is finished, purging by using nitrogen in the cavity, and the method specifically comprises the following steps:
s41, inflation operation: inflating the cavity by using nitrogen with a fourth preset flow according to a fourth preset time to obtain an inflated cavity;
the fourth preset time is set to 60s, the fourth preset flow rate is set to 200-1000 sccm, and at this time, both the upper electrode and the lower electrode are set to 0W.
In an alternative embodiment, the inflation operation: and (3) inflating the cavity by using 800sccm of nitrogen according to the time of 60s to obtain the inflated cavity.
In another alternative embodiment, the inflation operation: and (3) inflating the cavity by using 200sccm of nitrogen according to the time of 60s to obtain the inflated cavity.
In another alternative embodiment, the inflation operation: and (3) inflating the cavity by using 1000sccm of nitrogen according to the time of 60s to obtain the inflated cavity.
S42, air extraction operation: and exhausting the inflated cavity according to a fifth preset cavity pressure and fifth preset time to obtain the exhausted cavity.
And setting the fifth preset cavity pressure to be 5-15 mT, setting the fifth preset time to be 30s, and setting the upper electrode and the lower electrode to be 0W.
In an alternative embodiment, the pumping operation: and (3) exhausting the inflated cavity according to the cavity pressure of 10mT and the time of 30s to obtain the exhausted cavity.
In another alternative embodiment, the pumping operation: and (3) exhausting the inflated cavity according to the cavity pressure of 5mT and the time of 30s to obtain the exhausted cavity.
In another alternative embodiment, the pumping operation: and (3) exhausting the inflated cavity according to the cavity pressure of 15mT and the time of 30s to obtain the exhausted cavity.
Chemical reaction does not exist in the processes of inflation and air extraction, so that the power of the electrode does not need to be set; in the inflation process, the cavity pressure is not set, the nitrogen flow is set to be too small, residues on a film source or an etching disc are not easy to remove, and other wastes are caused by too large nitrogen flow, so that the fourth preset flow is set to be 200-1000 sccm; in the air exhaust process, the cavity pressure is set to be too high, air exhaust is incomplete, the cavity pressure of the machine is influenced by the Pump capacity, the productivity is wasted due to too long time setting, and the incomplete air exhaust condition exists due to too short time setting, so that the optimal air exhaust effect can be achieved by setting the fifth preset cavity pressure to be 5-15 mT and setting the fifth preset time to be 30s.
And S43, repeatedly executing the inflation operation and the air exhaust operation according to preset times, wherein in the embodiment, the preset times are 1.
Specifically, the inflation operation and the air exhaust operation are repeatedly performed 1 time, so that the residue is removed more completely, for example, 1% remains after the first inflation and air exhaust, and only 1% by 1% =0.01% remains after the second inflation and air exhaust;
therefore, the etching gas and the etching residues remained in the etching cavity are diluted by inflating, the diluted gas is pumped out by pumping, more than 99% of the etching residual gas and the etching products can be removed by circulating for 2 times, and the adsorption on the wafer source is avoided, so that the etching pits on the surface of the wafer source are effectively removed.
In summary, in the dry etching method provided by the present invention, oxygen is used to generate free atoms in the chamber; blowing to remove the free atoms to obtain a cleaned cavity; performing dry etching on the wafer source in the cleaned cavity; after the dry etching is finished, nitrogen is used for purging in the cavity, specifically, the cavity is subjected to twice inflation and air exhaust operations by using nitrogen, so that the residues are removed more thoroughly, organic matters are chemically etched by using free oxygen atoms, the substrate is not etched, the etching residues are purged by purging, the nitrogen purging is performed after the etching is finished, etching residual gas and etching products adsorbed on the surface of the wafer source are effectively removed, the etching residual gas and the etching products in the etching disc and the transfer cavity are removed, and the adsorption on the wafer source is avoided, so that etching pits on the surface of the wafer source are effectively removed.
The above description is only an embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent modifications made by the present invention and the contents of the accompanying drawings, which are directly or indirectly applied to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. A dry etching method is characterized by comprising the following steps:
generating free atoms in the chamber using oxygen;
blowing to remove the free atoms to obtain a cleaned cavity;
performing dry etching on the wafer source in the cleaned cavity;
and after the dry etching is finished, purging the cavity by using nitrogen.
2. The dry etching method according to claim 1, wherein the generating free atoms in the chamber using oxygen comprises:
introducing oxygen at a first preset flow rate into the cavity according to a first preset cavity pressure and first preset time;
and generating free atoms by using the oxygen according to a second preset cavity pressure, a second preset upper electrode, a second preset lower electrode and a second preset time.
3. The dry etching method according to claim 2, wherein the first predetermined chamber pressure is set to 5 to 15mT, the first predetermined time is set to 5 to 20s, and the first predetermined flow rate is set to 80 to 200 seem.
4. The dry etching method according to claim 2, wherein the second preset chamber pressure is set to 10-15 mT, the second preset upper electrode is set to 100-600W, the second preset lower electrode is set to 18-100W, and the second preset time is set to 20-30 s.
5. The dry etching method according to claim 1, wherein the purging to remove the free atoms and obtain the cleaned cavity comprises:
and introducing nitrogen with a third preset flow into the cavity, and blowing and removing the free atoms by using the nitrogen according to a third preset time to obtain the cleaned cavity.
6. The dry etching method according to claim 5, wherein the third predetermined flow rate is set to 200 to 1000sccm, and the third predetermined time is set to 90s.
7. The dry etching method according to claim 1, wherein the purging with nitrogen gas in the chamber after the dry etching is completed comprises:
and (3) inflating: inflating the cavity by using nitrogen with a fourth preset flow according to a fourth preset time to obtain an inflated cavity;
air extraction operation: and exhausting the inflated cavity according to a fifth preset cavity pressure and fifth preset time to obtain the exhausted cavity.
8. The dry etching method according to claim 7, wherein the fourth predetermined time is set to 60s, and the fourth predetermined flow rate is set to 200 to 1000sccm.
9. The dry etching method according to claim 7, wherein the fifth predetermined chamber pressure is set to 5 to 15mT, and the fifth predetermined time is set to 30s.
10. The dry etching method according to claim 7, wherein the purging with nitrogen gas in the chamber further comprises:
and repeatedly executing the inflation operation and the air extraction operation according to preset times.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211272272.8A CN115739822A (en) | 2022-10-18 | 2022-10-18 | Dry etching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211272272.8A CN115739822A (en) | 2022-10-18 | 2022-10-18 | Dry etching method |
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2022
- 2022-10-18 CN CN202211272272.8A patent/CN115739822A/en active Pending
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