CN115718345B - Core waveguide with curved array coplanar electrodes - Google Patents
Core waveguide with curved array coplanar electrodes Download PDFInfo
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- CN115718345B CN115718345B CN202211444226.1A CN202211444226A CN115718345B CN 115718345 B CN115718345 B CN 115718345B CN 202211444226 A CN202211444226 A CN 202211444226A CN 115718345 B CN115718345 B CN 115718345B
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 10
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Abstract
The invention discloses a core waveguide with curved array coplanar electrodes, comprising: a substrate layer; the first mask plate and the second mask plate; the first mask plate and the second mask plate are arranged on the substrate layer at intervals, and wave guide grooves are formed at the intervals; the waveguide core layer is arranged at the bottom of the waveguide groove; the first deflection electrode is arranged in the waveguide groove and is positioned on the waveguide core layer; the first deflection electrode has a plurality of curved portions; the second deflection electrode is arranged at the edge of the first mask plate, which is close to the waveguide slot; the third deflection electrode is arranged at the edge of the second mask plate, which is close to the waveguide slot; and the feed assembly is electrically connected with two ends of the first deflection electrode, the second deflection electrode and the third deflection electrode respectively so as to provide voltages for the first deflection electrode, the second deflection electrode and the third deflection electrode. The invention can effectively reduce the driving voltage required by realizing the deflection of the optical field and reduce the size of the optical waveguide.
Description
Technical Field
The invention relates to the field of optical waveguide devices, in particular to a core waveguide with a curved array coplanar electrode.
Background
In an Inertial Confinement Fusion (ICF) system driven by a high-power laser, a target light beam of the laser driver needs to be subjected to smoothing treatment, so that deflection and light beam sweeping of a light field mode need to be realized. At present, the deflection of the light field mode and the light beam sweeping and swinging can be realized by utilizing the mechanical control technology, the electric control liquid crystal technology, the acousto-optic effect, the thermo-optic light beam deflection technology, the spectrum dispersion sweeping and swinging technology, the large-aperture electro-optic crystal deflector and other technologies or devices. However, the technology or the device has the defects of high driving voltage, large device size, light field deflection dependence on light source wavelength, low sweeping frequency and the like.
In order to improve the above-mentioned drawbacks, as shown in fig. 1, the prior art provides a core waveguide with saw-tooth array coplanar electrodes, which is characterized in that the saw-tooth array coplanar electrodes are formed by triangle electrodes, and by applying a driving voltage to the saw-tooth array coplanar electrodes, the waveguide core forms a refractive index prism array in the beam propagation direction, so that the optical field mode of the output light is deflected laterally. The prior art solves the problem of high driving voltage to a certain extent, but the refractive index prism array formed by adopting the sawtooth array coplanar electrodes has low area and lower deflection efficiency; meanwhile, the tip end part of the sawtooth array coplanar electrode has larger obstruction to high-frequency signals, which is unfavorable for high-frequency modulation.
Disclosure of Invention
Accordingly, it is an object of the present invention to provide a core waveguide with curved array coplanar electrodes to at least partially ameliorate the above problems.
The embodiment of the invention provides a core waveguide with a curved array coplanar electrode, which comprises the following components:
A substrate layer;
The first mask plate and the second mask plate; the first mask plate and the second mask plate are arranged on the substrate layer at intervals, and wave guide grooves are formed at the intervals;
the waveguide core layer is arranged at the bottom of the waveguide groove;
A first deflection electrode disposed within the waveguide slot and positioned on the waveguide core; the deflection electrode has a plurality of bends;
the second deflection electrode is arranged at the edge of the first mask plate, which is close to the waveguide slot;
The third deflection electrode is arranged at the edge of the second mask plate, which is close to the waveguide slot;
And the feed assembly is electrically connected with two ends of the first deflection electrode, the second deflection electrode and the third deflection electrode respectively so as to provide voltages for the first deflection electrode, the second deflection electrode and the third deflection electrode.
Preferably, the method further comprises:
And the buffer layer is arranged between the waveguide core layer and the first deflection electrode.
Preferably, the buffer layer is made of silicon dioxide and has a thickness between 0 and 600 nm.
Preferably, the substrate layer is a lithium niobate wafer, and the waveguide core layer is a lithium niobate waveguide core layer formed based on an annealing proton exchange technology, and the cross section of the waveguide core layer is semicircular.
Preferably, the waveguide grooves and the waveguide core layer are all horn-shaped
Preferably, the waveguide core layer comprises an optical input end and an optical output end, and a light beam input area, a light beam transition area and a light beam modulation area are sequentially formed between the optical input end and the optical output end; wherein the cross-sectional area of the beam transition region gradually increases along with the light transmission direction; the width of the light beam input area is equal to the width of the initial section of the light beam transition area, and the width of the light beam modulation area is equal to the width of the tail section of the light beam transition area; the first deflection electrode is arranged at the light beam modulation area; the second deflection electrode and the third deflection electrode are arranged on two sides of the light beam modulation area.
Preferably, the beam input area has a length of 5mm and a width of 8 μm; the length of the light beam modulation area is 10.5mm, and the width is 80 mu m; the length of the beam transition zone is 5mm.
Preferably, the waveguide core layer includes an optical input end and an optical output end, and a beam input area, a beam transition area, a beam mode selection area, a beam modulation area and an extension area are formed between the optical input end and the optical output end in sequence; the waveguide core layers of the light beam transition region and the light beam modulation region are in a horn shape, and the cross sectional areas of the waveguide core layers are gradually increased along with the light transmission direction; the width of the initial end of the light beam transition area is equal to the width of the light beam input area, the width of the tail end of the light beam transition area is equal to the width of the light beam mode selection area, the width of the initial end of the light beam modulation area is equal to the width of the light beam mode selection area, and the width of the extension area is equal to the width of the tail end of the light beam modulation area; the first deflection electrode is arranged at the light beam modulation area; the second deflection electrode and the third deflection electrode are arranged on two sides of the light beam modulation area.
Preferably, the beam input area has a length of 5mm and a width of 8 μm; the length of the beam transition zone B is 5mm; the beam mode selection area has a length of 7mm and a width of 80 μm; the length of the beam modulation area is 9mm; extension E had a length of 0.5mm and a width of 184. Mu.m.
Preferably, the width of the curved portion is continuously increased along the edge of the beam modulation region in the light transmission direction.
Preferably, the feed assembly includes a first contact electrode, a second contact electrode, and a third contact electrode, the first contact electrode including a first contact pin and a second contact pin; the first contact pin is arranged at the position, close to the light input end, of the middle section of the long edge at one side of the waveguide core layer, of the first mask plate, and is electrically connected with one end of the first deflection electrode, and the second contact pin is arranged at the position, close to the light output end, of the tail end of the long edge at one side of the waveguide core layer, of the second mask plate, and is electrically connected with the other end of the first deflection electrode; the second contact electrode comprises a third contact pin and a fourth contact pin, the third contact pin is arranged at the position, close to the light input end, of the middle section of the long-side edge of one side of the waveguide core layer, of the first mask plate, is electrically connected with one end of the second deflection electrode, is close to but does not cross and overlap with the first contact pin, and the fourth contact pin is arranged at the position, close to the light output end, of the tail end of the long-side edge of one side of the waveguide core layer, of the first mask plate, and is electrically connected with the other end of the second deflection electrode; the third contact electrode comprises a fifth contact pin and a sixth contact pin, the fifth contact pin is arranged at the position, close to the light input end, of the middle section of the long edge of one side of the waveguide core layer, of the first mask plate, is electrically connected with one end of the third deflection electrode, is close to but does not cross-overlap with the first contact pin, and the sixth contact pin is arranged at the position, close to the light output end, of the tail end of the long edge of one side of the waveguide core layer, of the second mask plate, is electrically connected with the other end of the third deflection electrode, and is close to but does not cross-overlap with the second contact pin.
In the above embodiment, the first deflection electrode, the second deflection electrode and the third deflection electrode are combined together to form a curved array coplanar electrode structure, and the curved array coplanar electrode structure can enable the waveguides on two sides of the electrode to participate in the work at the same time, so that the working area of the waveguides is increased. Meanwhile, the curved array coplanar electrode can respectively generate positive and negative electric fields with gradient distribution to the waveguides below the left side and the right side of the waveguide, so that the waveguides on the two sides generate positive and negative refractive index differences with gradient distribution, the positive and negative refractive index differences with gradient distribution enable the two sides of the waveguide to respectively generate push-pull actions on light beams, namely, one side of the waveguide pushes the light beams, the other side pulls the light beams, and the combined action of the two sides pushes the light beams, so that the efficiency of the waveguide is finally greatly improved, the driving voltage required by light field deflection is effectively reduced, and the size of the light waveguide required by light field deflection is reduced.
In addition, compared with the prior art, the bending part design of the first deflection electrode has no tip structure like a sawtooth electrode, so that the obstruction to high-frequency signals can be reduced, and the high-frequency modulation is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the present invention, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a prior art core waveguide with saw tooth array coplanar electrodes.
Fig. 2 is a schematic structural diagram of a core waveguide with curved array coplanar electrodes according to an embodiment of the present invention.
Fig. 3 is a schematic view of a portion of the waveguide core of fig. 2.
Fig. 4 is a schematic diagram of another structure of a core waveguide with curved array coplanar electrodes according to an embodiment of the present invention.
Fig. 5 is a schematic view of a portion of the waveguide core of fig. 4.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 2 and 3, an embodiment of the present invention provides a core waveguide with curved array coplanar electrodes, which includes:
A substrate layer 10.
In this embodiment, the substrate layer 10 is used to provide support for the entire core waveguide.
The first mask plate 11 and the second mask plate 12 are arranged on the substrate layer 10 at intervals, and horn-shaped waveguide grooves 14 are formed at the intervals.
In this embodiment, through the mask etching process based on the cmos process, the area corresponding to the waveguide slot 14 is covered, and the substrate layer 10 outside the coverage area is covered with a mask having a predetermined thickness, so that the first mask 11 and the second mask 12 can be formed on the substrate layer 10.
Wherein, the thickness of the first mask plate 11 is equal to that of the second mask plate 12. Based on this, the depth of the waveguide groove 14 is the same as the thickness of the first mask 11, the width of the waveguide groove 14 is the space width between the first mask 11 and the second mask 12, and the bottom of the waveguide groove 14 is the substrate 10.
Wherein, optionally, the first mask plate 11 and the second mask plate 12 have the same shape and are symmetrical about the center line of the waveguide groove 14. Of course, it should be noted that the shapes of the first mask 11 and the second mask 12 may be different, so long as they can form the waveguide slot 14 with the shape required in the present embodiment, and these solutions are all within the scope of the present invention.
Optionally, the first mask 11 and the second mask 12 are silicon dioxide, and the thickness of the first mask 11 and the second mask 12 is between 600nm and 1 mm.
And a waveguide core layer 13 disposed at the bottom of the waveguide groove 14.
In the present embodiment, the waveguide core layer 13 is provided at the bottom of the waveguide groove 14, and its tip end surface shape is the same as the groove plane shape of the waveguide groove 14. The waveguide core 13 has an optical input end a and an optical output end B, and includes a beam input region a, a beam transition region B, and a beam modulation region C. The light beam to be modulated is input into the light beam input area A from the light input end a, is transmitted to the light beam modulation area C through the light beam transition area B1, and is finally output from the light output end B.
In this embodiment, the waveguide core layer 13 is a lithium niobate waveguide core layer based on an annealing proton exchange technique. The following describes the steps for preparing the waveguide core layer 13:
firstly, forming a lithium niobate annealed proton exchange waveguide core layer by using an annealing proton exchange technology.
Then, the lithium niobate wafer was immersed in a benzoic acid solution at 180 ℃ using benzoic acid as a proton source for proton exchange, and li+ and h+ exchange was performed for 2 hours.
Finally, the exchanged waveguide core layer is annealed at 333 ℃ for 6 hours.
As shown in fig. 3, the cross section of the lithium niobate waveguide core layer obtained based on the annealing proton exchange technology is semicircular. In this embodiment, the substrate 10 is a lithium niobate wafer, and the waveguide core layer 13 is a lithium niobate waveguide core layer, so as to improve the optical performance of the waveguide core layer 13.
A first deflection electrode 24 disposed within the waveguide slot 14 and located on the waveguide core layer 13; the first deflection electrode 24 has a plurality of curved portions.
A second deflection electrode 22 disposed at an edge of the first mask plate 11 near the waveguide groove 14;
a third deflection electrode 26 is arranged at the edge of the second mask plate 12 close to the waveguide slot 14.
In this embodiment, the first deflection electrode 24, the second deflection electrode 22, and the third deflection electrode 26 may be metal electrodes, such as gold or copper electrodes. In particular, gold electrodes with a thickness of 200nm are chosen.
In the present embodiment, the first deflection electrode 24 is disposed in the beam modulation region C, which is formed with a plurality of curved portions with a curvature, which are curved back and forth in the light transmission direction, and the width of the curved portions is substantially equal to the width of the beam modulation region C. The number of the bending portions, the bending radian and the width of the bending portions can be set according to actual needs, and are not limited to the shapes shown in the drawings of the embodiment, and these schemes are all within the protection scope of the present invention and are not described herein. In particular, in the present embodiment, the bending portion is a plurality of continuous bending portions.
In this embodiment, the second deflection electrode 22 and the third deflection electrode 26 are disposed at the edges of the two masks, and are disposed on both sides of the first deflection electrode 24, respectively.
And a power feeding assembly electrically connected to both ends of the first, second and third deflection electrodes 24, 22 and 26, respectively, to supply voltages to the first, second and third deflection electrodes 24, 22 and 26.
In the present embodiment, the feeding means includes at least two of the following modes, one of which is to apply a driving signal to the first deflection electrode 24, the second deflection electrode 22, and the third deflection electrode 26 using a feeding probe; secondly, the pins on the electrodes are wired, through which drive signals are applied to the first deflection electrode 24, the second deflection electrode 22 and the third deflection electrode 26. The second mode is described in detail below as an example, but it should be understood that other feeding modes are within the scope of the present invention.
In this embodiment, the feeding component includes a first contact electrode 25, a second contact electrode 23, and a third contact electrode 27, where the first contact electrode 25, the second contact electrode 23, and the third contact electrode 27 are metal electrodes, such as gold or copper electrodes.
Specifically, the first contact electrode 25 includes a first contact pin e and a second contact pin c; the first contact pin e is disposed at a position of the middle section of the long edge of the first mask plate 11 far from the waveguide core layer 13 and close to the light input end a, and is electrically connected to one end of the first deflection electrode 24, and the second contact pin c is disposed at a position of the tail end of the long edge of the second mask plate 12 far from the waveguide core layer 13 and close to the light output end b, and is electrically connected to the other end of the first deflection electrode 24.
The second contact electrode 23 includes a third contact pin f and a fourth contact pin h, where the third contact pin f is disposed at a position near the light input end a in the middle of the long edge of the first mask 11 far from the waveguide core 13, and is electrically connected to one end of the second deflection electrode 22, and is adjacent to but not overlapped with the first contact pin e. The fourth contact pin h is disposed at a position close to the optical output end b at the tail end of the long edge of the first mask plate 11 far from the waveguide core layer 13, and is electrically connected to the other end of the second deflection electrode 22.
The third contact electrode 27 includes a fifth contact pin g and a sixth contact pin d, the fifth contact pin g is disposed at a position near the light input end a of the long edge middle section of the first mask 11 far from the waveguide core 13, and is electrically connected to one end of the third deflection electrode 26, and is adjacent to but not overlapped with the first contact pin e, and the sixth contact pin d is disposed at a position near the light output end b of the long edge tail end of the second mask 12 far from the waveguide core 13, and is electrically connected to the other end of the third deflection electrode 26, and is adjacent to but not overlapped with the second contact pin d.
The following details the specific working procedure of this embodiment:
in this embodiment, the beam to be modulated is input from the light input end a to the light beam input area a, then transmitted to the light beam modulation area C through the light beam transition area B, and finally output from the light output end B.
When the first contact electrode 25, the second contact electrode 23 and the third contact electrode 27 are connected with a driving voltage, the first deflection electrode 24, the second deflection electrode 22 and the third deflection electrode 26 are connected with a voltage. The first deflection electrode 24, the second deflection electrode 22 and the third deflection electrode 26 are combined together to form a curved array coplanar electrode structure, and the curved array coplanar electrode structure can enable the waveguides on two sides of the electrode to participate in working at the same time, so that the working area of the waveguides is increased. Meanwhile, the curved array coplanar electrode can respectively generate positive and negative electric fields with gradient distribution to the waveguides below the left side and the right side of the waveguide, so that the waveguides on the two sides generate positive and negative refractive index differences with gradient distribution, the positive and negative refractive index differences with gradient distribution enable the two sides of the waveguide to respectively generate push-pull actions on light beams, namely, one side of the waveguide pushes the light beams, the other side pulls the light beams, and the combined action of the two sides pushes the light beams, so that the efficiency of the waveguide is finally greatly improved, the driving voltage required by light field deflection is effectively reduced, and the size of the light waveguide required by light field deflection is reduced.
In addition, compared with the prior art, the bending portion design of the first deflection electrode 24 has no tip structure like a sawtooth electrode, so that the obstruction to high-frequency signals can be reduced, and the high-frequency modulation is facilitated.
In order to facilitate an understanding of the invention, some preferred embodiments of the invention are described further below.
Preferably, the method further comprises:
a buffer layer 21 is arranged between the waveguide core layer 13 and the first deflection electrode 24.
The buffer layer 21 is made of a buffer material having a low refractive index of light, such as silicon dioxide. The buffer layer 21 is arranged between the waveguide core layer 13 and the first deflection electrode 24, and serves to reduce the influence of the electrode on the optical properties of the waveguide core layer 13. Wherein in particular the thickness of the buffer layer 21 is between 0 and 600 nm.
Preferably, the waveguide groove 14 and the waveguide core layer 13 are both horn-shaped.
As shown in fig. 2, the cross-sectional area of the waveguide core 13 is smallest at the light beam input end a and largest at the light beam output end b, i.e., the cross-sectional area of the waveguide core 13 of the horn structure gradually increases from the light beam input end a to the light beam output end b
Wherein, in one implementation, the cross-sectional area of the light beam transition region B gradually increases with the light transmission direction; the width of the light beam input area A is equal to the width of the initial section of the light beam transition area B, and the width of the light beam modulation area C is equal to the width of the final section of the light beam transition area. The waveguide core layer 13 is a waveguide core layer with a horn-shaped structure; wherein the width of the beam input area a is smaller than the width of the beam modulation area C. In this case, the length of the light beam input area A is 5mm and the width is 8 μm; the length of the beam modulation area C is 10.5mm, and the width is 80 mu m; the length of the beam transition zone B is 5mm.
It should be understood that in other embodiments of the present invention, the lengths and widths of the beam input area a, the beam transition area B, and the beam modulation area C are set according to actual needs, and are not limited to the above values, and all the solutions are within the scope of the present invention.
In this embodiment, the waveguide core layer 13 with a horn structure is adopted, so that the conversion efficiency from the optical fiber mode input mode to the waveguide transmission mode is increased.
Wherein, as shown in fig. 4 and 5, in another implementation, the waveguide core layer 13 further includes a beam mode selection region D and an extension region E; the beam mode selection area D is located between the beam transition area B and the beam adjustment area C, and the extension area E is located at the tail end of the beam adjustment area C. In this case, the waveguide core layers of the light beam transition region B and the light beam modulation region C are horn-shaped, and the cross-sectional areas thereof gradually increase along with the light transmission direction; the width of the starting end of the light beam transition area B is equal to that of the light beam input area A, the width of the tail end of the light beam transition area B is equal to that of the light beam mode selection area D, the width of the starting end of the light beam modulation area C is equal to that of the light beam mode selection area D, and the width of the extension area E is equal to that of the tail end of the light beam modulation area C.
Wherein, in particular, the length of the light beam input area is 5mm and the width is 8 μm; the length of the beam transition zone B is 5mm; the beam mode selection area has a length of 7mm and a width of 80 μm; the length of the beam modulation area is 9mm; extension E had a length of 0.5mm and a width of 184. Mu.m.
It should be understood that in other embodiments of the present invention, the lengths and widths of the beam input area a, the beam transition area B, the beam mode selection area D, the beam modulation area C, and the extension area E may be set according to practical needs, and are not limited to the above-mentioned values, and all the solutions are within the scope of the present invention.
In the present embodiment, the first deflection electrode 24 is disposed at the beam modulation region; the second deflection electrode 22 and the third deflection electrode 26 are arranged on both sides of the beam modulation region. In particular, the curved portion of the first deflection electrode 24 is curved back and forth in the light transmission direction, and the width of the curved portion is continuously increased along the edge of the light beam modulation region C up to the tail of the light beam modulation region C.
Compared with the former implementation manner, the waveguide core layer 13 with the cascade horn-shaped structure is adopted in the embodiment, so that the constraint of the waveguide edge to the light spot is reduced, and the light spot is not easy to deform due to the constraint of the waveguide edge in the waveguide working state; the continuously expanding bending part structure is adopted, so that the waveguide areas at two sides of the bending part structure can be expanded, and the working area of the waveguide can be improved better.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A core waveguide with curved array coplanar electrodes, comprising:
a substrate layer; the substrate layer is a lithium niobate wafer;
The first mask plate and the second mask plate; the first mask plate and the second mask plate are arranged on the substrate layer at intervals, and wave guide grooves are formed at the intervals;
The waveguide core layer is arranged at the bottom of the waveguide groove; the waveguide groove and the waveguide core layer are both in a horn shape; the waveguide core layer is a lithium niobate waveguide core layer formed based on an annealing proton exchange technology, and the cross section of the waveguide core layer is semicircular;
The first deflection electrode is arranged in the waveguide groove and is positioned on the waveguide core layer; the first deflection electrode has a plurality of curved portions;
the second deflection electrode is arranged at the edge of the first mask plate, which is close to the waveguide slot;
The third deflection electrode is arranged at the edge of the second mask plate, which is close to the waveguide slot;
The feed assembly is respectively and electrically connected with two ends of the first deflection electrode, the second deflection electrode and the third deflection electrode so as to provide voltages for the first deflection electrode, the second deflection electrode and the third deflection electrode; wherein:
The waveguide core layer comprises an optical input end and an optical output end, and a light beam input area, a light beam transition area, a light beam mode selection area, a light beam modulation area and an extension area are sequentially formed between the optical input end and the optical output end; the waveguide core layers of the light beam transition region and the light beam modulation region are in a horn shape, and the cross sectional areas of the waveguide core layers are gradually increased along with the light transmission direction; the width of the curved portion is continuously increased along the edge of the beam modulation region in the light transmission direction.
2. The core waveguide with curved array coplanar electrodes of claim 1, further comprising:
A buffer layer disposed between the waveguide core layer and the first deflection electrode; the buffer layer is made of silicon dioxide and has a thickness of between 0 and 600 nm.
3. The core waveguide with curved array coplanar electrodes according to claim 1 wherein the width of the start end of the beam transition region is equal to the width of the beam input region, the width of the end of the beam transition region is equal to the width of the beam mode selection region, the width of the start end of the beam modulation region is equal to the width of the beam mode selection region, and the width of the extension region is equal to the width of the end of the beam modulation region; the first deflection electrode is arranged at the light beam modulation area; the second deflection electrode and the third deflection electrode are arranged on two sides of the light beam modulation area.
4. A core waveguide with curved array coplanar electrodes according to claim 3 wherein the beam input region has a length of 5mm and a width of 8 μm; the length of the beam transition zone B is 5mm; the beam mode selection area has a length of 7mm and a width of 80 μm; the length of the beam modulation area is 9mm; extension E had a length of 0.5mm and a width of 184. Mu.m.
5. The core waveguide with curved array coplanar electrodes of claim 1, wherein the feed assembly comprises a first contact electrode, a second contact electrode, and a third contact electrode, the first contact electrode comprising a first contact pin and a second contact pin; the first contact pin is arranged at the position, close to the light input end, of the middle section of the long edge at one side of the waveguide core layer, of the first mask plate, and is electrically connected with one end of the first deflection electrode, and the second contact pin is arranged at the position, close to the light output end, of the tail end of the long edge at one side of the waveguide core layer, of the second mask plate, and is electrically connected with the other end of the first deflection electrode; the second contact electrode comprises a third contact pin and a fourth contact pin, the third contact pin is arranged at the position, close to the light input end, of the middle section of the long-side edge of one side of the waveguide core layer, of the first mask plate, is electrically connected with one end of the second deflection electrode, is close to but does not cross and overlap with the first contact pin, and the fourth contact pin is arranged at the position, close to the light output end, of the tail end of the long-side edge of one side of the waveguide core layer, of the first mask plate, and is electrically connected with the other end of the second deflection electrode; the third contact electrode comprises a fifth contact pin and a sixth contact pin, the fifth contact pin is arranged at the position, close to the light input end, of the middle section of the long edge of one side of the waveguide core layer, of the first mask plate, is electrically connected with one end of the third deflection electrode, is close to but does not cross-overlap with the first contact pin, and the sixth contact pin is arranged at the position, close to the light output end, of the tail end of the long edge of one side of the waveguide core layer, of the second mask plate, is electrically connected with the other end of the third deflection electrode, and is close to but does not cross-overlap with the second contact pin.
Priority Applications (1)
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