CN115701271A - Magnetic random access memory and device - Google Patents
Magnetic random access memory and device Download PDFInfo
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- CN115701271A CN115701271A CN202110873391.8A CN202110873391A CN115701271A CN 115701271 A CN115701271 A CN 115701271A CN 202110873391 A CN202110873391 A CN 202110873391A CN 115701271 A CN115701271 A CN 115701271A
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Abstract
The invention provides a magnetic random access memory and a device, wherein the magnetic random access memory comprises: a seed layer having a first crystal orientation; the lattice structure of the spin-orbit torque wiring layer is acted by the seed layer to have a second crystal orientation, and when spin-orbit torque current is input to the spin-orbit torque wiring layer, the spin-orbit torque wiring layer forms out-of-plane direction quasi-damping torque; the invention can enable the spin orbit torque wiring layer to have the spin orbit torque of the out-of-plane direction similar damping torque, and has higher current-spin current conversion efficiency (spin Hall angle), thereby not only improving the overturning efficiency, but also avoiding an external magnetic field which additionally breaks the symmetry when overturning the perpendicular magnetic anisotropic magnetic torque.
Description
Technical Field
The invention relates to the technical field of magnetic memories, in particular to a magnetic random access memory, a magnetic random access memory device and a read-write control method.
Background
With the continuous reduction of the semiconductor process size, moore's law is slowed down, and the increase of leakage current and interconnection delay become the bottleneck of the conventional CMOS memory. The search for new generation solutions for memory technologies has become a focus of integrated circuit research, in which magnetic random access memory cells are of great interest. Compared with the traditional device, the Magnetic Random Access Memory (MRAM) has the advantages of unlimited erasing and writing times, nonvolatility, high reading and writing speed, radiation resistance and the like, is expected to become a universal memory, and is an ideal device for constructing the next-generation nonvolatile memory and memory computing.
The Magnetic Random Access Memory (MRAM) for realizing information writing based on Spin Transfer Torque (STT) has the characteristics of high integration level, nonvolatility, compatibility with a Complementary Metal Oxide Semiconductor (CMOS) process and the like, has unique advantages in the fields of embedded memories, computer last-level caches and the like, and particularly has the advantages of higher integration level and lower power consumption based on Perpendicular Magnetic Anisotropy (PMA). The basic unit Magnetic Tunnel Junction (MTJ) is a Tunneling Magnetoresistive (TMR) device composed of a sandwich structure including a free layer (ferromagnetic layer), an insulating layer (Tunneling layer, barrier layer), and a reference layer (ferromagnetic layer), and the Magnetic moment state of the free layer can be controlled by a write current through the STT.
To solve the above problems, it is a hot research to change the magnetic moment state of the ferromagnetic layer by Spin Orbit Torque (SOT). The core structure of the magnetic resonance sensor is usually a ferromagnetic layer/Spin orbit torque wiring layer double-layer structure, the Spin orbit torque can be derived from Spin Hall Effect (SHE) and Rashba Effect, and according to an action mechanism, the SOT can be divided into two parts, one part is similar to field torque, and the other part is similar to damping torque. When a current flows through the spin-orbit torque wiring layer, a spin current is generated due to the presence of a spin-orbit coupling effect, and the spin current acts on the adjacent ferromagnetic layer to generate SOT, thereby changing the magnetic moment state of the ferromagnetic layer. In the process of realizing magnetic moment overturning by utilizing the SOT, current only needs to flow through a wiring, the wiring is usually made of metal with good conductivity and cannot flow through an insulating layer, and the problems of service life and power consumption of STT writing are solved.
However, for PMA-MTJ, when a driving current passes through a conventional heavy metal spin orbit torque wiring layer such as W, ta, an equivalent field in an in-plane direction can only be generated (as shown in fig. 1, the current direction is x direction, x and y directions are in-plane directions, the magnetic moment of the ferromagnetic layer is z direction, i.e. perpendicular direction, which can also be referred to as out-of-plane direction), and the magnetic moment can only be completely reversed by introducing an equivalent field component that breaks symmetry along the x direction. There are several ways to provide an equivalent field that breaks symmetry so that the above system can achieve flipping of perpendicular magnetic moments. For example: an external magnetic field in the x direction is directly applied, but the mode is not favorable for large-scale integration and simultaneously low power consumption is difficult to realize; complete overturning is realized by changing the shape anisotropy of the magnetic layer, so that the method can increase the complexity of the process and is also not beneficial to large-scale integration; the antiferromagnetic layer is added, and the complete inversion of the vertical magnetic moment is realized by controlling the material composition, the thickness, the annealing process and the like, but the in-plane equivalent field provided by the method is limited, and the difficulty is increased for preparing good PMA (permanent magnetic association) for the ferromagnetic layer.
In addition to the above problems, since the SOT in the in-plane direction is perpendicular to the magnetic moment direction, when the magnetic moment is flipped, the magnetic moment is not in the oscillation mode, the flipped magnetic moment needs to overcome an anisotropic field, and the SOT generated when a driving current passes through the spin orbit torque wiring layer needs to be greater than γ Han/2, where γ is a gyromagnetic ratio and Han is a magnetic anisotropic field. Compared with the above, the out-of-plane quasi-damping moment SOT is parallel to the magnetic moment direction, so that the magnitude of the equivalent damping coefficient can be changed, the magnetic moment reversal can be realized when the equivalent damping coefficient is negative, the SOT only needs to be larger than a × γ Han, and a is a damping coefficient and is usually in the order of 0.01. The out-of-plane direction-like damping moment SOT has a higher energy efficiency.
Disclosure of Invention
An object of the present invention is to provide a magnetic random access memory, in which a spin orbit torque wiring layer has a spin orbit torque of an out-of-plane direction-like damping torque, and has a large current-spin current conversion efficiency (spin hall angle), which can improve the switching efficiency and prevent an additional external magnetic field from breaking symmetry when a perpendicular magnetic anisotropic magnetic moment is switched. It is another object of the present invention to provide a magnetic random access memory device.
In order to achieve the above object, an aspect of the present invention discloses a magnetic random access memory, comprising:
a seed layer having a first crystal orientation;
the lattice structure of the spin-orbit torque wiring layer is acted by the seed layer to have a second crystal orientation, and when spin-orbit torque current is input to the spin-orbit torque wiring layer, the spin-orbit torque wiring layer forms out-of-plane direction quasi-damping torque;
and the magnetic tunnel junction is arranged on the spin orbit torque wiring layer.
Preferably, the out-of-plane direction quasi-damping torque is a quasi-damping torque perpendicular to a spin orbit torque wiring layer plane.
Preferably, the magnetic tunnel junction includes a free layer, an insulating layer provided on the free layer, and a reference layer provided on the insulating layer.
Preferably, the reference layer is a ferromagnetic layer, and when a spin-orbit torque current is input to the spin-orbit torque wiring layer, a magnetic moment of the ferromagnetic layer is inverted to a magnetic moment direction corresponding to the spin-orbit torque current.
Preferably, the material of the ferromagnetic layer includes one of Cr, mn, co, fe, ni, an alloy formed of at least two of the above metals, and an alloy formed of at least one of the above metals and at least one of B, C and N.
Preferably, the material of the spin orbit torque wiring layer includes one of a simple substance, an alloy, and a compound of at least one atom of Mo, ru, rh, pd, ta, W, ir, pt, au, and Bi.
Preferably, the spin orbit torque wiring layer has a thickness of 1nm to 30nm.
Preferably, the seed layer is made of an insulating material or a material with a resistivity greater than a preset resistivity threshold.
Preferably, the material of the seed layer is KTaO 3 NaCl, mgO, and one of a nitride and an oxide formed by containing at least one element selected from Ti, hf, mo, mg, V, ta, W, al, si, and Bd.
The invention also discloses a magnetic random access memory device, which comprises the magnetic random access memory and a control circuit;
the control circuit is used for inputting spin-orbit torque current to a spin-orbit torque wiring layer of the magnetic random access memory, applying reading voltage to the magnetic tunnel junction and determining data stored by the magnetic tunnel junction according to the current formed by the magnetic tunnel junction under the action of the reading voltage.
The magnetic random access memory comprises a seed layer, a spin orbit torque wiring layer arranged on the seed layer and a magnetic tunnel junction arranged on the spin orbit torque wiring layer. Wherein the seed layer has a first crystal orientation. The lattice structure of the spin orbit torque wiring layer is subjected to the seed layer to have a second crystal orientation. Therefore, when the spin orbit torque current is input to the spin orbit torque wiring layer, the spin orbit torque wiring layer forms an out-of-plane similar damping torque, the similar damping torque can enable the magnetic torque direction of the ferromagnetic layer of the magnetic tunnel junction to be turned over deterministically, the turning efficiency of the ferromagnetic layer can be improved, the power consumption is low, and the large-scale integration is facilitated. Therefore, the spin orbit torque wiring layer with specific symmetry can be induced and grown by regulating the material and the growth process of the seed layer, so that the SOT with the out-of-plane direction similar damping torque is generated, the current-spin current conversion efficiency (spin Hall angle) is high, the overturning efficiency can be improved, and an external magnetic field which breaks symmetry additionally can be avoided when the perpendicular magnetic anisotropy magnetic moment is overturned.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a block diagram of one embodiment of the magnetic random access memory of the present invention;
FIG. 2 is a diagram showing the structure of a free layer, a spin orbit torque wiring layer and a seed layer in an embodiment of the magnetic random access memory of the present invention;
FIG. 3 is a top view of one embodiment of the magnetic random access memory of the present invention;
FIG. 4 is a schematic diagram of the spin Hall effect of one embodiment of the magnetic random access memory of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
According to one aspect of the present invention, the present embodiment discloses a magnetic random access memory. As shown in fig. 1, the magnetic random access memory includes a seed layer 5 having a first crystal orientation, a spin orbit torque wiring layer 4 provided on the seed layer 5, and a magnetic tunnel junction provided on the spin orbit torque wiring layer 4.
Wherein the lattice structure of the spin orbit torque wiring layer 4 has a second crystal orientation by the action of the seed layer 5, and when a spin orbit torque current is input to the spin orbit torque wiring layer 4, the spin orbit torque wiring layer 4 forms a quasi-damping torque in an out-of-plane direction.
The crystal orientation of the spin orbit torque wiring layer 4 is influenced by the crystal orientation of the seed layer 5 to have a second crystal orientation, and the second crystal orientation finally formed in the spin orbit torque wiring layer 4 may be the same as or different from the first crystal orientation of the seed layer 5, that is, the first crystal orientation may be the same as or different from the second crystal orientation.
The magnetic random access memory of the present invention includes a seed layer 5, a spin orbit torque wiring layer 4 provided on the seed layer 5, and a magnetic tunnel junction provided on the spin orbit torque wiring layer 4. Wherein the seed layer 5 has a first crystal orientation. The lattice structure of the spin orbit torque wiring layer 4 is subjected to the seed layer 5 to have a second crystal orientation. Therefore, when the spin orbit torque current is input to the spin orbit torque wiring layer 4, the spin orbit torque wiring layer 4 forms a quasi-damping torque in the out-of-plane direction, the quasi-damping torque can enable the magnetic torque direction of the ferromagnetic layer of the magnetic tunnel junction to be turned over deterministically, the turning efficiency of the ferromagnetic layer can be improved, the power consumption is low, and large-scale integration is facilitated. Therefore, the spin orbit torque wiring layer 4 with specific symmetry can be induced and grown by regulating the material, the thickness and the growth process of the seed layer 5, so that the SOT with the out-of-plane direction damping torque is generated, the current-spin current conversion efficiency (spin Hall angle) is high, the overturning efficiency can be improved, and an external magnetic field with symmetry broken additionally can be avoided when the perpendicular magnetic anisotropy magnetic torque is overturned.
In a preferred embodiment, the out-of-plane-direction quasi-damping torque is a quasi-damping torque perpendicular to the plane of the spin orbit torque wiring layer 4.
Specifically, as shown in fig. 2 and 3, assuming that the normal line of the spin orbit torque wiring layer 4 (the direction perpendicular to the plane of the spin orbit torque wiring layer 4) is the z direction, the extending direction of the spin orbit torque wiring layer 4 in the plane of the spin orbit torque wiring layer 4 is the x direction, and the direction perpendicular to the x direction in the plane of the spin orbit torque wiring layer 4 is the y direction, so that both the x direction and the y direction are the in-plane aspects of the spin orbit torque wiring layer 4. When the spin orbit torque current is input to the spin orbit torque wiring layer 4, the spin orbit torque current can be input to the spin orbit torque wiring layer 4 through the in-plane directions of the spin orbit torque wiring layer 4 in the x direction and the y direction. In the preferred embodiment, the lattice structure of the spin-orbit torque wiring layer 4 is adjusted by the seed layer 5, so that the direction of the spin-orbit torque wiring layer 4 generating the quasi-damping torque is the vertical direction (i.e. the out-of-plane direction), thereby the magnetic moment of the free layer 3 of the magnetic tunnel junction can be switched deterministically, and the magnetization switching element with higher switching efficiency can be obtained.
In a preferred embodiment, the magnetic tunnel junction comprises a free layer 3, an insulating layer 2 provided on the free layer and a reference layer 1 provided on the insulating layer. Hall electrodes 6 are provided at both ends of the spin orbit torque wiring layer 4 in the length direction and the width direction, respectively, for inputting spin orbit torque current to the spin orbit torque wiring layer 4.
Specifically, it is more preferable that the reference layer 1 is a ferromagnetic layer, and when a spin-orbit torque current is input to the spin-orbit torque wiring layer 4, a magnetic moment of the ferromagnetic layer is inverted to a magnetic moment direction corresponding to the spin-orbit torque current. In this preferred embodiment, the magnetic tunnel junction includes, from bottom to top, a free layer 3 (ferromagnetic layer), an insulating layer 2 (tunneling layer, barrier layer) provided on the free layer, and a reference layer 1 (ferromagnetic layer) provided on the insulating layer. The free layer 3 is fixed on the spin orbit torque wiring layer 4, and the magnetization direction of the ferromagnetic layer serving as the free layer 3 can be inverted when a spin orbit torque current is input to the spin orbit torque wiring layer 4. When a current passes through the spin-orbit torque wiring layer 4, a spin current is generated due to the spin-orbit coupling effect, the spin-orbit torque wiring layer 4 is adjacent to the ferromagnetic layer, and the generated spin current can act on the ferromagnetic layer by the spin-orbit torque to change the magnetization direction thereof, as shown in fig. 2, where M is the magnetic moment direction, τ is the quasi-damping torque SOT, and I is the spin-orbit torque current.
The seed layer 5 is adjacent to the spin orbit torque wiring layer 4, and the seed layer 5 influences the lattice structure of the spin orbit torque wiring layer 4 through different materials, structures, preparation processes and other modes, so that the vertical quasi damping torque SOT is generated.
In a preferred embodiment, the material of the ferromagnetic layer comprises one of Cr, mn, co, fe, ni, an alloy of at least two of the above metals, and an alloy of at least one of the above metals and at least one of B, C and N. The magnetic moment direction of the ferromagnetic layer formed by one of the above materials can be switched by the damping moment SOT-like of the spin-orbit torque wiring layer 4. More preferably, the ferromagnetic layer is made of one of Co-Fe, co-Fe-B, ni-Fe, coNi and CoPt.
In a preferred embodiment, the spin hall angle of the spin orbit torque wiring layer 4 is larger than a preset threshold value.
Specifically, the spin orbit torque wiring layer 4 mainly functions to generate spin current due to the spin hall effect and the Rashba effect at the interface when current passes. The Rashba effect stems from the breakdown of the symmetry of the spatial inversion at the interface between different materials, with a potential gradient in the normal direction. When a current flows along the interface, an equivalent magnetic field perpendicular to the electron movement direction and in the in-plane direction acts on the spins of the electrons, so that the spin directions are unified into the effective magnetic field direction, thereby generating spin accumulation. The spin hall effect is generated in the wiring material, and when a current passes through the wiring, electrons having different spin directions generate different drift directions due to the spin-orbit coupling effect, as shown in fig. 4. The spin current generated by the spin hall effect and the Rashba effect acts on the adjacent ferromagnetic layer, and the magnetization direction of the ferromagnetic layer is reversed under the action of the spin orbit torque. The lattice structure of the spin orbit torque wiring layer 4 can influence the symmetry of the interface of the spin orbit torque wiring layer and an upper ferromagnetic layer, and the current can generate SOT in the out-of-plane direction by adjusting the lattice structure of the spin orbit torque wiring layer 4, so that the efficiency of SOT magnetic moment overturning is improved. Thus, the material of the spin orbit torque wiring layer 4 is preferably formed of a material having a large spin hall angle. In one specific example, the preset threshold may be selected to have a spin hall angle absolute value greater than 0.01. It should be noted that, in practical applications, a person skilled in the art may determine the preset threshold according to actual requirements, so as to select a material with a larger spin hall angle to form the spin-orbit torque wiring layer 4, which is not limited by the present invention.
In a preferred embodiment, the material of the spin orbit torque wiring layer 4 includes one of a simple substance, an alloy, and a compound of at least one atom of Mo, ru, rh, pd, ta, W, ir, pt, au, and Bi. More preferably, the spin orbit torque wiring layer 4 is made of W, ta, W x Te y 、Mo x Te y 、IrMn y 、Pt x Mn y 、Pd x Mn y And Co x Pt y Wherein x and y may vary with the ratio of the different compound element components, and the invention is not limited thereto.
In a preferred embodiment, the spin orbit torque wiring layer 4 has a thickness of 1nm to 30nm. Within the range of the thickness of the preferred spin-orbit torque wiring layer 4, the spin-orbit torque wiring layer 4 can generate SOT in the out-of-plane direction by adjusting the material, lattice structure, thickness, growth conditions, and the like of the seed layer 5, and the spin conversion efficiency, that is, the spin hall angle, of the spin-orbit torque wiring layer 4 of the adjacent layer is improved.
In a preferred embodiment, the seed layer 5 is made of an insulating material or a material having a resistivity greater than a predetermined threshold resistivity.
It is understood that the seed layer 5 preferably has an insulating property or a material with a large resistivity to avoid causing shunting, resulting in a decrease in spin conversion efficiency of the spin orbit torque wiring layer 4. The seed layer 5 is preferably a material having excellent flatness to improve the performance of the upper layer wiring and the ferromagnetic layer, and is preferably a material capable of easily forming a specific crystal orientation to induce the spin-orbit torque wiring layer 4 to form a lattice structure having a specific symmetry.
In a preferred embodiment, the material of the seed layer 5 is KTaO 3 NaCl, mgO, and one of a nitride and an oxide formed by containing at least one element selected from Ti, hf, mo, mg, V, ta, W, al, si, and Bd.
Specifically, the seed layer 5 is made of KTaO 3 NaCl, mgO, and one of nitrides and oxides formed by containing at least one element selected from Ti, hf, mo, mg, V, ta, W, al, si, and Bd, and then a specific growth manner (including various types of physical vapor deposition, chemical vapor deposition, epitaxy, etc., such as magnetron sputtering, molecular beam epitaxy, atomic layer deposition, etc.), growth environment (including temperature, degree of vacuum, etc.), and post-treatment (including doping, annealing, oxidation, etc.) are selected according to a desired specific lattice structure when the seed layer 5 is grown. The seed layer 5 formed in this way can affect the lattice structure of the spin-orbit torque wiring layer 4 on the upper layer, and the spin-orbit torque wiring layer can be formed4 generate a damping-like moment in the out-of-plane direction.
In summary, the present invention induces the spin-orbit torque wiring layer 4 to generate SOT in the out-of-plane direction and a larger spin Hall angle by adjusting the material and lattice structure of the seed layer 5. And, the seed layer 5 with a specific lattice structure is formed by adjusting the forming conditions of the material and the process of the seed layer 5 and the like to induce and grow the spin orbit torque wiring layer 4 with specific symmetry, so that the SOT with out-of-plane direction-like damping torque is generated, and the SOT with larger current-spin current conversion efficiency (spin Hall angle) can improve the turnover efficiency and can avoid an equivalent field which additionally breaks the symmetry.
Based on the same principle, the embodiment also discloses a magnetic random access memory device. The magnetic random access memory device includes a magnetic random access memory and a control circuit as described in this embodiment.
The control circuit is used for inputting spin orbit torque current to a spin orbit torque wiring layer 4 of the magnetic random access memory, applying reading voltage to the magnetic tunnel junction and determining data stored in the magnetic tunnel junction according to the current formed by the magnetic tunnel junction under the action of the reading voltage.
Since the principle of solving the problem of the magnetic random access memory device is similar to that of the magnetic random access memory, the implementation of the magnetic random access memory device can be referred to, and is not described herein again.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. A magnetic random access memory, comprising:
a seed layer having a first crystal orientation;
the lattice structure of the spin-orbit torque wiring layer is acted by the seed layer to have a second crystal orientation, and when spin-orbit torque current is input to the spin-orbit torque wiring layer, the spin-orbit torque wiring layer forms out-of-plane direction quasi-damping torque;
and a magnetic tunnel junction provided on the spin orbit torque wiring layer.
2. The magnetic random access memory according to claim 1, wherein the out-of-plane-like damping torque is a damping-like torque perpendicular to a plane of the spin-orbit torque wiring layer.
3. The magnetic random access memory of claim 1 wherein the magnetic tunnel junction comprises a free layer, an insulating layer disposed on the free layer, and a reference layer disposed on the insulating layer.
4. The magnetic random access memory according to claim 3, wherein the reference layer is a ferromagnetic layer, and when a spin-orbit torque current is input to a spin-orbit torque wiring layer, a magnetic moment of the ferromagnetic layer is inverted to a magnetic moment direction corresponding to the spin-orbit torque current.
5. The magnetic random access memory of claim 3 wherein the material of the ferromagnetic layer comprises one of Cr, mn, co, fe, ni, an alloy of at least two of the foregoing metals, and an alloy of at least one of the foregoing metals and at least one of B, C and N.
6. The magnetic random access memory according to claim 1, wherein the material of the spin-orbit torque wiring layer comprises one of a simple substance, an alloy, and a compound of at least one atom of Mo, ru, rh, pd, ta, W, ir, pt, au, and Bi.
7. The magnetic random access memory according to claim 1, wherein the thickness of the spin orbit torque wiring layer is 1nm to 30nm.
8. The magnetic random access memory of claim 1, wherein the seed layer is formed of an insulating material or a material having a resistivity greater than a predetermined resistivity threshold.
9. The MRAM of claim 1, wherein the seed layer is KTaO 3 NaCl, mgO, and one of a nitride and an oxide formed by containing at least one element selected from Ti, hf, mo, mg, V, ta, W, al, si, and Bd.
10. A magnetic random access memory device comprising the magnetic random access memory according to any one of claims 1 to 9 and a control circuit;
the control circuit is used for inputting spin orbit torque current to a spin orbit torque wiring layer of the magnetic random access memory, applying reading voltage to the magnetic tunnel junction and determining data stored by the magnetic tunnel junction according to the current formed by the magnetic tunnel junction under the action of the reading voltage.
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| CN202110873391.8A CN115701271A (en) | 2021-07-30 | 2021-07-30 | Magnetic random access memory and device |
| PCT/CN2022/108226 WO2023005970A1 (en) | 2021-07-30 | 2022-07-27 | Magnetic random access memory and apparatus |
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| WO2019005923A1 (en) * | 2017-06-28 | 2019-01-03 | Wisconsin Alumni Research Foundation | Magnetic memory devices based on 4d and 5d transition metal perovskites |
| KR101856906B1 (en) * | 2017-08-31 | 2018-05-10 | 연세대학교 산학협력단 | Spin-Orbit Torque Magnetic Device |
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