CN115679294A - Semiconductor process chamber and semiconductor process equipment - Google Patents
Semiconductor process chamber and semiconductor process equipment Download PDFInfo
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- CN115679294A CN115679294A CN202110838771.8A CN202110838771A CN115679294A CN 115679294 A CN115679294 A CN 115679294A CN 202110838771 A CN202110838771 A CN 202110838771A CN 115679294 A CN115679294 A CN 115679294A
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Abstract
The invention provides a semiconductor process chamber and semiconductor process equipment, wherein the semiconductor process chamber comprises a chamber body, a rotary lifting assembly, a bearing part and a heating assembly, wherein the bearing part and the heating assembly are arranged in the chamber body, the bearing part is used for bearing a wafer, the heating assembly is positioned below the bearing part and is used for heating the wafer on the bearing part by heating the bearing part, the rotary lifting assembly comprises a magnetic generation part and a magnetic matching part which are respectively arranged outside the chamber body, the magnetic generation part is used for generating a magnetic field to magnetize the magnetic matching part when being electrified and applying a suspension supporting force and a rotary driving force to the magnetic matching part, and the magnetic matching part is connected with the bearing part and is used for suspending and rotating under the action of the suspension supporting force and the rotary driving force applied to the magnetic generation part by the magnetic generation part so as to drive the bearing part to suspend and rotate in the chamber body. The semiconductor process chamber and the semiconductor process equipment provided by the invention can improve the growth uniformity of the semiconductor film and improve the semiconductor process result.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a semiconductor process chamber and semiconductor process equipment.
Background
The Metal Organic Chemical Vapor Deposition (MOCVD) process generally uses Organic compounds of group iii and group ii elements and hydrides of group v and group vi elements as crystal growth source materials, and performs vapor phase epitaxy on a Wafer (Wafer) by thermal decomposition reaction to grow thin layer single crystal materials of various group iii-v and group ii-vi compound semiconductors and their multiple solid solutions.
The metal organic chemical vapor deposition apparatus generally includes a process chamber, a carrier disposed in the process chamber, a driving member extending into the process chamber through an opening formed in a bottom of the process chamber and connected to a center of a bottom of the carrier, and a resistive or inductive heating member disposed in the process chamber and located below the carrier. In the metal organic chemical vapor deposition process, a mechanical arm conveys a wafer into a process chamber, the mechanical arm drives a bearing part to be matched with a driving mechanism in a lifting mode, the wafer is placed on the bearing part, reaction substances are carried into the process chamber by carrier gas such as nitrogen or hydrogen, a resistance or inductance heating part heats the bearing part to heat the wafer borne on the bearing part, the temperature of the wafer meets the process requirement, the driving part drives the bearing part to rotate to drive the wafer borne on the bearing part to rotate, and the compound semiconductor film can be uniformly grown on the wafer.
However, the driving part penetrates through the opening at the bottom of the process chamber and extends into the process chamber to be connected with the center of the bottom of the bearing part, on one hand, the driving part can block the center of the bearing part due to heating, and the lower area corresponding to the center of the bearing part is occupied by the driving part, and no heating part can be arranged, so that the center temperature and the edge temperature of the bearing part are uneven, the center temperature and the edge temperature of a wafer are uneven, and cannot be adjusted, and the uniformity of an epitaxial film grown on the wafer is poor.
Disclosure of Invention
The present invention is directed to at least one of the problems of the prior art, and provides a semiconductor processing chamber and semiconductor processing equipment, which can improve the uniformity of the semiconductor film growth and improve the semiconductor processing result.
The invention provides a semiconductor process chamber, which comprises a chamber body, a bearing part, a heating assembly and a rotary lifting assembly, wherein the bearing part is arranged in the chamber body and used for bearing a wafer, the heating assembly is arranged in the chamber body and positioned below the bearing part and used for heating the bearing part to heat the wafer borne on the bearing part, the rotary lifting assembly comprises a magnetic generating part and a magnetic matching part, the magnetic generating part is arranged outside the chamber body and used for generating a magnetic field when being electrified to magnetize the magnetic matching part and apply a suspension supporting force and a rotary driving force to the magnetic matching part, and the magnetic matching part is arranged in the chamber body and connected with the bearing part and used for suspending and rotating under the action of the suspension supporting force and the rotary driving force applied to the magnetic generating part by the magnetic generating part to drive the bearing part to suspend and rotate in the chamber body.
Optionally, the rotary lifting assembly further comprises a lifting driving component, the lifting driving component is disposed outside the chamber body, is connected to the magnetic generating component, and is configured to drive the magnetic generating component to lift so as to drive the magnetic matching component and the bearing component to lift.
Optionally, the magnetic generating component is annular and surrounds the chamber body, and the magnetic matching component is annular and is arranged at the edge of the bearing component along the circumferential direction of the bearing component.
Optionally, the rotary lifting assembly further includes an annular connection component, the magnetic matching component is connected to the bearing component through the connection component, one end of the connection component is connected to the bottom edge of the bearing component along the circumferential direction of the bearing component, and the other end of the connection component is connected to the magnetic matching component.
Optionally, the heating assembly includes an infrared generating component, and the infrared generating component is configured to emit infrared rays to the bearing component to heat the bearing component.
Optionally, the infrared generating component includes a plurality of infrared lamps, and the plurality of infrared lamps are uniformly distributed at intervals below the bearing component.
Optionally, the heating assembly further includes a first reflecting member, disposed below the plurality of infrared lamps, for reflecting the infrared rays emitted downward by each of the infrared lamps toward the bearing member.
Optionally, the heating assembly further includes a second reflecting member, and the second reflecting member is annular and surrounds the plurality of infrared lamps, and is configured to reflect the infrared rays emitted from the infrared lamps to the surrounding toward the bearing member.
Optionally, the heating assembly further includes a light-transmitting shielding member disposed above the plurality of infrared lamps, and configured to transmit the infrared rays emitted by the infrared lamps, and shield the plurality of infrared lamps to prevent the reactant generated in the semiconductor process from depositing on the infrared lamps.
Optionally, the semiconductor process chamber further includes a lifting driving mechanism, a transmission port through which the light-transmitting shielding member and the carrying member pass is formed in a side wall of the chamber body, and the lifting driving mechanism penetrates through the first reflecting member and is connected with the light-transmitting shielding member, and is configured to drive the light-transmitting shielding member to lift.
Optionally, a side of each infrared lamp facing away from the bearing member is coated with a reflective coating, and the reflective coating is used for reflecting the infrared rays emitted by each infrared lamp facing away from the side of the bearing member toward the bearing member.
Optionally, the heating assembly further includes a control unit, the plurality of infrared lamps are divided into a plurality of infrared lamp groups in the radial direction of the bearing member according to different radial sizes from the center of the bearing member, each infrared lamp group includes at least one infrared lamp, and the control unit is configured to control the plurality of infrared lamp groups to output different powers.
The invention also provides semiconductor processing equipment comprising the semiconductor processing chamber provided by the invention.
The invention has the following beneficial effects:
according to the semiconductor process chamber provided by the invention, the magnetic generating component generates a magnetic field by electrifying the magnetic generating component arranged outside the chamber body, so that the magnetic matching component which is arranged in the chamber body and can be magnetized under the action of the magnetic field can be magnetized, and therefore, by means of the magnetic generating component arranged outside the chamber body, the magnetic matching component arranged in the chamber body can be applied with suspension supporting force and rotary driving force, so that the magnetic matching component can be suspended and rotated in the chamber body. The magnetic generating component applies a suspension supporting force and a rotation driving force to the magnetic matching component through a magnetic field, so that the magnetic matching component is suspended and rotated, therefore, the magnetic generating component arranged outside the cavity body does not need to extend into the cavity body and be connected with the magnetic matching component, the magnetic matching component can be suspended and rotated, an opening for the magnetic generating component to pass through is not needed to be formed at the bottom of the cavity body, the magnetic matching component connected with the bearing component does not need to be connected with the bottom center of the bearing component, and only the magnetic matching component can be located in the magnetic field generated by the magnetic generating component, so that the thermal resistance of the magnetic matching component arranged in the cavity body to the center of the bearing component can be avoided, the magnetic matching component can be prevented from occupying the lower area of the center of the bearing component, a heating assembly positioned below the bearing component can be arranged in the lower area of the center of the bearing component, the thermal uniformity of the bearing component can be improved, the thermal uniformity of wafers borne on the bearing component can be improved, the growth uniformity of semiconductor thin films can be improved, the semiconductor process result can be improved, and the sealing performance of the cavity body can be improved.
The semiconductor processing equipment provided by the invention can improve the growth uniformity of a semiconductor film and improve the semiconductor processing result by means of the semiconductor processing cavity provided by the invention.
Drawings
FIG. 1 is a schematic diagram of a semiconductor processing chamber and semiconductor processing equipment according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a semiconductor processing chamber and a strip lamp distribution in a heating assembly of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a semiconductor processing chamber and a distribution of spherical bulbs in a heating assembly of a semiconductor processing apparatus according to one embodiment of the present invention;
description of reference numerals:
1-a chamber body; 11-an air intake structure; 12-an exhaust port; 13-a transfer port; 2-a carrier member;
21-a carrying groove; 3-a heating assembly; 31-an infrared generating component; 32-a first reflective component; 33-a second reflective component; 34-a light-transmissive shielding member; 4-a rotary lifting assembly; 41-magnetic mating parts;
42-a magnetism generating component; 43-a connecting member; 44-a lift drive member; 5-a lifting driving mechanism;
6-wafer.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the semiconductor processing chamber and the semiconductor processing apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1, an embodiment of the present invention provides a semiconductor processing chamber, which includes a chamber body 1, a carrying component 2, a heating assembly 3, and a rotary lifting assembly 4, wherein the carrying component 2 is disposed in the chamber body 1 for carrying a wafer 6, the heating assembly 3 is disposed in the chamber body 1 and located below the carrying component 2 for heating the wafer 6 carried on the carrying component 2 by heating the carrying component 2, the rotary lifting assembly 4 includes a magnetism generating component 42 and a magnetism matching component 41, the magnetism generating component 42 is disposed outside the chamber body 1 for generating a magnetic field to magnetize the magnetism matching component 41 when being powered on and applying a suspension supporting force and a rotary driving force to the magnetism matching component 41, and the magnetism matching component 41 is disposed in the chamber body 1 and connected to the carrying component 2 for suspending and rotating under the suspension supporting force and the rotary driving force applied thereto by the magnetism generating component 42 to drive the carrying component 2 to suspend and rotate in the chamber body 1.
In the semiconductor process chamber provided by the embodiment of the invention, the magnetic generating component 42 arranged outside the chamber body 1 is electrified to generate a magnetic field, so that the magnetic matching component 41 which is arranged in the chamber body 1 and can be magnetized under the action of the magnetic field can be magnetized, and thus, by means of the magnetic generating component 42 arranged outside the chamber body 1, a suspension supporting force and a rotation driving force can be applied to the magnetic matching component 41 arranged in the chamber body 1, so that the magnetic matching component 41 can suspend and rotate in the chamber body 1, and the magnetic matching component 41 is connected with the bearing component 2, so that the magnetic matching component 41 can suspend and rotate in the chamber body 1, the bearing component 2 can be driven to suspend and rotate in the chamber body 1, the wafer 6 carried on the bearing component 2 is driven to rotate in the semiconductor process, and a compound semiconductor thin film can be uniformly grown on the wafer 6. Since the magnetic generating component 42 applies a suspension supporting force and a rotation driving force to the magnetic matching component 41 through a magnetic field to suspend and rotate the magnetic matching component 41, the magnetic generating component 42 arranged outside the chamber body 1 can suspend and rotate the magnetic matching component 41 without extending into the chamber body 1 and being connected with the magnetic matching component 41, so that an opening for the magnetic generating component 42 to pass through is not required to be formed at the bottom of the chamber body 1, and the magnetic matching component 41 connected with the bearing component 2 is not required to be connected with the bottom center of the bearing component 2, as long as the magnetic generating component 42 can be in the magnetic field generated by the magnetic matching component 41, so that the thermal resistance of the magnetic matching component 41 arranged in the chamber body 1 to the center of the bearing component 2 can be avoided, and the magnetic matching component 41 can be prevented from occupying the lower area of the center of the bearing component 2, so that the heating assembly 3 positioned below the bearing component 2 can be arranged in the lower area of the center of the bearing component 2, and the uniformity of heating of the bearing component 2 can be improved, and the uniformity of the semiconductor body can be improved, and the bottom of the semiconductor chamber 1 can be improved.
In a semiconductor process, a wafer 6 is loaded on a bearing part 2 in a chamber body 1, a magnetic field can be generated by the magnetic generating part 42 through electrifying the magnetic generating part 42 arranged outside the chamber body 1, the magnetic field passes through the chamber body 1 and acts on a magnetic matching part 41 arranged in the chamber body 1, the magnetic matching part 41 can be magnetized, thus, different magnetic fields can be generated by the magnetic generating part 42, a suspension supporting force and a rotation driving force can be exerted on the magnetic matching part 41, when the magnetic generating part 42 exerts the suspension supporting force on the magnetic matching part 41, the magnetic matching part 41 can be lifted and suspended in the chamber body 1, so that the bearing part 2 is driven to be lifted and suspended in the chamber body 1, when the magnetic matching part 41 and the bearing part 2 are suspended in the chamber body 1, the magnetic generating part 42 can exert the rotation driving force on the magnetic matching part 41, at the moment, the magnetic matching part 41 can rotate in the chamber body 1, so as to drive the bearing part 2 to rotate in the chamber body 1, and further drive the wafer 6 loaded on the bearing part 2 to rotate in the chamber body 1. The heating assembly 3 arranged in the chamber body 1 and positioned below the bearing part 2 heats the bearing part 2 to heat the wafer 6 borne on the bearing part 2, so that the temperature of the wafer 6 can meet the requirements of the semiconductor process.
After the semiconductor process is finished, the magnetic field generated by the magnetism generating component 42 can disappear by removing the power to the magnetism generating component 42, at this time, the magnetism matching component 41 is not magnetized any more, the magnetism matching component 41 can fall to the bottom of the chamber body 1, the magnetism matching component 41 can not rotate and suspend, and therefore the bearing component 2 can not rotate and suspend. Specifically, after the semiconductor process is finished, the rotation driving force applied to the magnetic engaging member 41 by the demagnetizing generating member 42 may be first removed to gradually stop the rotation of the magnetic engaging member 41 and the carrier member 2, and then the levitation supporting force applied to the magnetic engaging member 41 by the magnetic generating member 42 may be removed to drop the magnetic engaging member 41 onto the bottom of the chamber body 1 and stop the levitation, so that the carrier member 2 may be dropped and stopped the levitation.
Alternatively, the electricity to the magnetism generating member 42 may be an alternating current.
Alternatively, the carrier member 2 may comprise a tray capable of holding the wafer 6.
Optionally, the carrier 2 may be provided with a carrier groove 21 for carrying the wafer 6.
In a preferred embodiment of the present invention, coils with different structures may be disposed in the magnetism generating part 42, and by applying power to the coils with different structures, the magnetism generating part 42 may generate different magnetic fields, so that the levitation supporting force and the rotation driving force may be applied to the magnetic matching part 41.
Alternatively, the carrier member 2 may comprise a tray capable of holding the wafer 6.
As shown in fig. 1, in a preferred embodiment of the present invention, the rotary lifting assembly 4 may further include a lifting driving member 44, and the lifting driving member 44 is disposed outside the chamber body 1 and connected to the magnetism generating member 42 for driving the magnetism generating member 42 to lift and lower to drive the magnetism matching member 41 and the carrying member 2 to lift and lower.
When the magnetic generation component 42 applies a suspension supporting force to the magnetic matching component 41, the magnetic generation component 42 is driven to slowly lift by the lifting driving component 44, and the bearing component 2 can be driven to slowly lift, so that the phenomenon that the wafer 6 borne on the bearing component 2 generates excessive vibration and is damaged due to the fact that the lifting speed of the magnetic matching component 41 and the bearing component 2 is too high can be avoided, and the phenomenon that the magnetic matching component 41 and the bottom of the chamber body 1 generate excessive impact force due to the fact that the lifting speed of the magnetic matching component 41 is too high and particles pollute the semiconductor process environment in the chamber body 1 can be avoided, and the service life of the magnetic matching component 41 can be prolonged.
Alternatively, the elevating driving part 44 may include a cylinder or a lead screw.
In a preferred embodiment of the present invention, the magnetism generating member 42 may be annular and surround the chamber body 1, and the magnetism fitting member 41 may be annular and disposed at the edge of the carrier member 2 in the circumferential direction of the carrier member 2.
As shown in fig. 1, a ring-shaped magnetic fitting member 41 may be provided on the bottom surface edge of the carrier member 2 along the circumferential direction of the carrier member 2. However, the arrangement of the magnetic engagement member 41 is not limited to this, and for example, the magnetic engagement member 41 may be provided on the outer circumferential wall of the carrier member 2 along the circumferential direction of the carrier member 2. Further, the structure of the magnetic engagement member 41 is not limited to this, and for example, the magnetic engagement member 41 may include a plurality of magnetic engagement elements provided at the edge of the carrier member 2 at intervals in the circumferential direction of the carrier member 2.
As shown in fig. 1, in a preferred embodiment of the present invention, the rotary lifting assembly 4 may further include a ring-shaped connecting member 43, the magnetic fitting member 41 is connected to the carrier member 2 through the connecting member 43, one end of the connecting member 43 is connected to the bottom edge of the carrier member 2 along the circumferential direction of the carrier member 2, and the other end is connected to the magnetic fitting member 41.
That is, the magnetic matching component 41 is not directly connected to the carrier 2, but is connected to the carrier 2 through the connecting component 43, so that the magnetic matching component 41 can be farther from the carrier 2 and closer to the magnetic generating component 42 by the connecting component 43, so that the magnetic field generated by the magnetic generating component 42 can be more easily applied to the magnetic matching component 41, the magnetic matching component 41 can be more easily magnetized, and the magnetic generating component 42 can more easily apply the levitation supporting force and the rotational driving force to the magnetic matching component 41, so that the levitation and rotation stability of the magnetic matching component 41 can be improved, and the use stability of the semiconductor process chamber can be further improved. As shown in fig. 1, the connection part 43 may be bent in a direction away from the bearing part 2 and in a direction close to the sidewall of the chamber body 1 so that the magnetic engagement part 41 is farther from the bearing part 2 and closer to the magnetism generation part 42, but the structure of the connection part 43 is not limited thereto.
Alternatively, the connection member 43 and the carrier member 2 may be connected by a pin structure or a groove structure.
Alternatively, the connection member 43 and the magnetic fitting member 41 may be connected by a pin structure, a groove structure, or a screw structure.
As shown in fig. 1, in a preferred embodiment of the present invention, the heating assembly 3 may include an infrared generating part 31, and the infrared generating part 31 is used for emitting infrared rays toward the carrier member 2 to heat the carrier member 2. The infrared generation component 31 is used for emitting infrared rays to the bearing component 2 to heat the bearing component 2, and compared with resistance type heating or resistance type heating, the heating and cooling speed of the bearing component 2 can be increased, so that the capacity of a semiconductor process chamber can be increased.
The reason is that the temperature of the resistance wire needs to be raised to the temperature meeting the semiconductor process requirement in the resistance heating process, and the bearing part 2 can be heated to the temperature meeting the semiconductor process requirement, while the temperature of the resistance wire is gradually raised, and the temperature of the resistance wire is raised to the temperature meeting the semiconductor process requirement in a certain time, so that the temperature raising speed of the bearing part 2 is slower, and when the temperature of the bearing part 2 needs to be lowered, the temperature of the resistance wire is gradually lowered, and the temperature of the bearing part 2 needs a certain time, so that the temperature lowering speed of the bearing part 2 is slower. The inductive heating is to heat the carrier 2 to meet the semiconductor process requirement by first making the power of the inductive coil reach a preset power, and the power of the inductive coil is gradually increased, and it takes a certain time to reach the preset power, which results in a slow temperature rise speed of the carrier 2, and when the temperature of the carrier 2 is required to be decreased, the temperature of the inductive coil is gradually decreased, and also needs a certain time, which makes the temperature decrease speed of the carrier 2 slow. And emit the infrared ray to the carrier 2 with the help of infrared generation part 31, heat carrier 2, because the infrared ray need not to heat up gradually, also need not to improve power gradually, thereby compare with resistance-type heating or resistance-type heating, can improve the speed that carrier 2 heaied up, and, when the temperature that needs make carrier 2 descends, cancel the infrared ray that infrared generation part 31 launched to carrier 2, the infrared ray can disappear in the twinkling of an eye, and need not to can disappear gradually, thereby compare with resistance-type heating or resistance-type heating, can improve the speed that carrier 2 cooled down.
In a preferred embodiment of the present invention, the infrared generating part 31 may include a plurality of infrared lamps which are uniformly spaced below the carrying part 2.
Through circular telegram to each infrared lamp, can make each infrared lamp produce the infrared ray to with the help of each infrared lamp to 2 transmission infrared rays of carrier member, heat carrier member 2, and, through making a plurality of infrared lamps at the even interval distribution in carrier member 2's below, can be even heat carrier member 2, thereby can improve the homogeneity that the semiconductor film grows, and improve semiconductor technology result.
As shown in fig. 1-3, in a preferred embodiment of the present invention, the infrared lamp may include one or more of a bulb, a strip lamp, and a ring lamp.
As shown in fig. 1 and 2, the infrared lamp may be a bulb-shaped bulb, and a plurality of bulb-shaped bulbs are uniformly spaced along the circumferential direction of the carrier member 2 below the carrier member 2. As shown in fig. 1 and 3, the infrared lamp may be a strip lamp, and a plurality of strip lamps are uniformly distributed at intervals along the radial direction of the bearing part 2 below the bearing part 2.
In a preferred embodiment of the present invention, the heating assembly 3 may further include a control unit (not shown), the plurality of infrared lamps are divided into a plurality of infrared lamp groups in a radial direction of the bearing member 2 according to a radial dimension from the center of the bearing member 2, each infrared lamp group includes at least one infrared lamp, and the control unit is configured to control the plurality of infrared lamp groups to output different powers.
That is, one or more infrared lamps in the same infrared lamp group are the same from the radial size at 2 centers of bearing part, with the help of a plurality of infrared lamp groups of control with different power output, can control the power of each group of infrared lamp alone, thereby can heat the radial different regions of bearing part 2 with different temperatures, and, the region that is the same from its center on bearing part 2 is heated the same, then improve flexibility and the homogeneity of heating bearing part 2, and then can improve the homogeneity of semiconductor film growth, and improve semiconductor technology result, and reduce infrared waste.
As shown in fig. 1 and 2, the plurality of spherical bulbs are radially divided into a plurality of infrared lamp groups according to the radial dimension from the center of the bearing part 2, each infrared lamp group comprises a plurality of spherical bulbs, that is, the spherical bulbs in one infrared lamp group are located on the same circumference, the radial dimension from the center of the bearing part 2 is the same, and the spherical bulbs in each infrared lamp group are uniformly spaced in the circumferential direction of the bearing part 2. However, each infrared lamp group is not limited to include a plurality of spherical bulbs, and for example, one spherical bulb may be disposed below the center of the carrier member 2, and the one spherical bulb located below the center of the carrier member 2 may be one infrared lamp group.
As shown in fig. 1 and 3, the plurality of strip-shaped lamp tubes are radially divided into a plurality of infrared lamp groups according to different radial sizes from the center of the bearing part 2 in the radial direction of the bearing part 2, each infrared lamp group includes two strip-shaped lamp tubes, that is, the radial sizes from the two strip-shaped lamp tubes in one infrared lamp group to the center of the bearing part 2 are the same, the two strip-shaped lamp tubes in one infrared lamp group are axisymmetrically arranged with the diameter of the bearing part 2 as an axis, and the spacing distance between every two adjacent strip-shaped lamp tubes in the plurality of strip-shaped lamp tubes is the same. However, each infrared lamp group is not limited to include two strip-shaped lamps, for example, one strip-shaped lamp may be disposed below the center of the bearing member 2, and the one strip-shaped lamp located below the center of the bearing member 2 is one infrared lamp group, and a plurality of strip-shaped lamps may be disposed at positions having the same radial dimension from the center of the bearing member 2, and the plurality of strip-shaped lamps located at positions having the same radial dimension from the center of the bearing member 2 are spaced apart in a direction parallel to the radial direction of the bearing member 2, so that one infrared lamp group may include three or more strip-shaped lamps.
As shown in fig. 1 to 3, in a preferred embodiment of the present invention, the heating assembly 3 may further include a first reflecting member 32, and the first reflecting member 32 is disposed below the plurality of infrared lamps for reflecting infrared rays downwardly emitted from the respective infrared lamps toward the carrier member 2. The infrared rays emitted downwards by the infrared lamps are reflected to the bearing part 2 by the first reflecting part 32, so that the utilization rate of the infrared rays can be improved, the waste of the infrared rays is reduced, the speed of heating the bearing part 2 is further improved, and the capacity of the semiconductor process chamber can be further improved.
As shown in fig. 1, the first reflecting member 32 may be formed in a plate shape at the bottom of the chamber body 1 as the bottom wall of the chamber body 1. However, the shape and the position of the first reflecting member 32 are not limited to these, and for example, the first reflecting member 32 may be provided in the chamber body 1, and the bottom wall of the chamber body 1 may be formed by other members alone.
Alternatively, the material of the first reflective member 32 may include molybdenum or gold.
As shown in fig. 1 to 3, in a preferred embodiment of the present invention, the heating assembly 3 may further include a second reflecting member 33, wherein the second reflecting member 33 is annular and surrounds the plurality of infrared lamps for reflecting infrared rays emitted from the infrared lamps toward the periphery toward the carrying member 2. The infrared rays emitted by the infrared lamps towards the periphery are reflected towards the bearing part 2 by the second reflecting part 33, so that the utilization rate of the infrared rays can be improved, the waste of the infrared rays is reduced, the speed of heating the bearing part 2 is further improved, and the capacity of the semiconductor process chamber can be further improved.
Alternatively, the second reflective element 33 may be made of a material including molybdenum or gold.
In a preferred embodiment of the invention, the side of each infrared lamp facing away from the carrier part 2 may be coated with a reflective coating for reflecting infrared light emitted by each infrared lamp towards the side facing away from the carrier part 2 towards the carrier part 2. The infrared rays emitted by the infrared lamps to the side departing from the bearing part 2 are reflected to the bearing part 2 by virtue of the reflective coating, so that the utilization rate of the infrared rays can be improved, the waste of the infrared rays is reduced, the speed of heating the bearing part 2 is further improved, and the capacity of a semiconductor process chamber can be further improved.
As shown in fig. 1 to 3, in a preferred embodiment of the present invention, the heating assembly 3 may further include a light-transmissive shielding member 34, wherein the light-transmissive shielding member 34 is disposed above the plurality of infrared lamps, is capable of transmitting infrared rays emitted from the respective infrared lamps, and is used for shielding the plurality of infrared lamps to prevent reactants generated in the semiconductor process from being deposited on the respective infrared lamps.
The plurality of infrared lamps are shielded by the light-transmitting shielding part 34 arranged above the plurality of infrared lamps, and reactants generated in the semiconductor process are prevented from being deposited on the infrared lamps, so that the phenomenon that the reactants generated in the semiconductor process are deposited on the infrared lamps to influence infrared rays emitted by the infrared lamps to the bearing part 2 is avoided, and the service life of the infrared lamps is prolonged. Further, since the light-transmitting shielding member 34 is disposed above the plurality of infrared lamps, it is necessary to make the light-transmitting shielding member 34 transmit the infrared rays emitted from the infrared lamps, so as to prevent the light-transmitting shielding member 34 from affecting the infrared rays emitted from the infrared lamps to the carrier member 2, and to make the infrared rays emitted from the infrared lamps all transmit the light-transmitting shielding member 34 to the carrier member 2.
As shown in fig. 1 to fig. 3, in a preferred embodiment of the present invention, the semiconductor process chamber may further include a lifting driving mechanism 5, a transmission port 13 for the light-transmissive shielding member 34 to pass through is formed on a sidewall of the chamber body 1, and the lifting driving mechanism 5 penetrates through the first reflecting member 32 and is connected to the light-transmissive shielding member 34 for driving the light-transmissive shielding member 34 to lift.
Thus, when the reactant generated in the semiconductor process deposited on the transparent shielding member 34 is excessive and the infrared light emitted from the infrared lamp to the bearing member 2 is excessively affected, the bearing member 2 may be driven by the lifting driving assembly to rise to the same height level as the transfer port 13, and then the robot (not shown in the figure) in the semiconductor process equipment may extend into the chamber body 1, the bearing member 2 may be taken out from the chamber body 1 through the transfer port 13, and then the transparent shielding member 34 may be driven by the lifting driving mechanism 5 to rise to the same level as the transfer port 13, and then the robot may extend into the chamber body 1, the transparent shielding member 34 with the reactant generated in the semiconductor process deposited thereon may be taken out from the chamber body 1 through the transfer port 13, and then a new transparent shielding member 34 may be transferred into the chamber body 1 through the transfer port 13 and placed on the lifting driving mechanism 5, and then the lifting driving mechanism 5 may drive the transparent shielding member 34 to fall, and then the bearing member 2 may be transferred to the chamber body 1 through the transfer port 13, and then the infrared light-transmitting driving assembly 34 may be replaced, thereby preventing the infrared light-transmitting and the infrared light-emitting component from affecting the infrared lamp from falling.
Alternatively, the elevating driving mechanism 5 may include a cylinder or a lead screw.
As shown in fig. 1, in a preferred embodiment of the invention, an air inlet structure 11 may be disposed at the top of the chamber body 1, a plurality of air inlets may be disposed in the air inlet structure 11, each air inlet is used for guiding the semiconductor process gas into the chamber body 1 so as to react with the wafer 6 carried on the carrying member 2 at the semiconductor process temperature to perform the semiconductor process on the wafer 6, wherein the direction in which the semiconductor process gas is guided into the chamber body 1 by the air inlets may be indicated by an arrow from top to bottom at the air inlet structure 11 in fig. 1.
As shown in fig. 1, in a preferred embodiment of the present invention, an exhaust port 12 may be formed on the chamber body 1, the exhaust port 12 being used for exhausting semiconductor process gas and reactants generated in the semiconductor process, wherein a direction of exhausting the semiconductor process gas and the reactants generated in the semiconductor process through the exhaust port 12 may be shown as an arrow pointing to two sides at the exhaust port 12 in fig. 1.
As another technical solution, as shown in fig. 1, an embodiment of the present invention further provides a semiconductor processing apparatus including the semiconductor processing chamber according to the embodiment of the present invention.
According to the semiconductor process equipment provided by the embodiment of the invention, the semiconductor process chamber provided by the embodiment of the invention can be used for improving the growth uniformity of a semiconductor film and improving the semiconductor process result.
In summary, the semiconductor process chamber and the semiconductor process apparatus provided by the embodiments of the invention can improve the uniformity of the semiconductor film growth and improve the semiconductor process result.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (13)
1. A semiconductor process chamber comprises a chamber body, a bearing part, a heating assembly and a rotary lifting assembly, wherein the bearing part is arranged in the chamber body and used for bearing a wafer, the heating assembly is arranged in the chamber body and located below the bearing part and used for heating the bearing part to heat the wafer borne on the bearing part, the rotary lifting assembly is characterized by comprising a magnetic generation part and a magnetic matching part, the magnetic generation part is arranged outside the chamber body and used for generating a magnetic field when being electrified to magnetize the magnetic matching part and apply a suspension supporting force and a rotary driving force to the magnetic matching part, and the magnetic matching part is arranged in the chamber body and connected with the bearing part and used for suspending and rotating under the action of the suspension supporting force and the rotary driving force applied by the magnetic generation part to drive the bearing part to suspend and rotate in the chamber body.
2. The semiconductor processing chamber of claim 1, wherein the rotary elevation assembly further comprises an elevation driving member disposed outside the chamber body and connected to the magnetic generating member for driving the magnetic generating member to elevate to drive the magnetic engaging member and the carrying member to elevate.
3. The semiconductor processing chamber of claim 2, wherein the magnetic generating member is annular and surrounds the chamber body, and the magnetic engaging member is annular and is disposed at an edge of the carrier member along a circumferential direction of the carrier member.
4. The semiconductor processing chamber of claim 3, wherein the rotary lifting assembly further comprises a ring-shaped connecting member, the magnetic matching member is connected with the bearing member through the connecting member, one end of the connecting member is connected with the bottom edge of the bearing member along the circumferential direction of the bearing member, and the other end of the connecting member is connected with the magnetic matching member.
5. The semiconductor processing chamber of claim 1, wherein the heating assembly comprises an infrared generating component for emitting infrared light toward the carrier to heat the carrier.
6. The semiconductor processing chamber of claim 5, wherein the infrared generating component comprises a plurality of infrared lamps uniformly spaced below the carrier.
7. The semiconductor processing chamber of claim 6, wherein the heating assembly further comprises a first reflective member disposed below the plurality of infrared lamps for reflecting the infrared light emitted downward by each of the infrared lamps toward the carrier.
8. The semiconductor processing chamber of claim 6 or 7, wherein the heating assembly further comprises a second reflective member, the second reflective member being annular and surrounding the plurality of infrared lamps for reflecting the infrared light emitted from each of the infrared lamps toward the carrier.
9. The semiconductor processing chamber of claim 7, wherein the heating assembly further comprises a light-transmissive shield member disposed above the plurality of infrared lamps and adapted to transmit the infrared light emitted by each of the infrared lamps and to shield the plurality of infrared lamps from deposition of reactants generated in a semiconductor process on each of the infrared lamps.
10. The semiconductor processing chamber of claim 9, further comprising a lift driving mechanism, wherein a transmission port is formed in a sidewall of the chamber body for the light-transmissive shielding member and the carrier member to pass through, and the lift driving mechanism penetrates through the first reflective member and is connected to the light-transmissive shielding member for driving the light-transmissive shielding member to lift.
11. The semiconductor processing chamber of claim 6, wherein a side of each infrared lamp facing away from the carrier is coated with a reflective coating for reflecting the infrared light emitted by each infrared lamp facing away from the side of the carrier toward the carrier.
12. The semiconductor processing chamber of claim 6, wherein the heating assembly further comprises a control unit, the plurality of infrared lamps are divided into a plurality of infrared lamp groups in a radial direction of the bearing part according to radial sizes from the center of the bearing part, each infrared lamp group comprises at least one infrared lamp, and the control unit is used for controlling the plurality of infrared lamp groups to output different powers.
13. A semiconductor processing apparatus comprising the semiconductor processing chamber of any of claims 1-12.
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| CN202110838771.8A CN115679294A (en) | 2021-07-23 | 2021-07-23 | Semiconductor process chamber and semiconductor process equipment |
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| CN202110838771.8A CN115679294A (en) | 2021-07-23 | 2021-07-23 | Semiconductor process chamber and semiconductor process equipment |
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| CN115679294A true CN115679294A (en) | 2023-02-03 |
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| CN117467962A (en) * | 2023-12-28 | 2024-01-30 | 上海陛通半导体能源科技股份有限公司 | Thin film deposition apparatus |
| CN117702077A (en) * | 2023-11-23 | 2024-03-15 | 南昌大学 | Lining body carrier disc rotation driving device for MOCVD equipment |
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