CN115580233B - Dynamic bias method and system for low-noise amplifier and dynamic bias circuit - Google Patents
Dynamic bias method and system for low-noise amplifier and dynamic bias circuit Download PDFInfo
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
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- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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Abstract
The invention relates to the technical fields of microelectronics, semiconductors and communication, in particular to a dynamic bias method and a system for a low-noise amplifier and a dynamic bias circuit; when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, and the bias voltage of the circuit is fixed; when a radio frequency signal is input, the dynamic bias circuit dynamically increases the bias voltage of the main amplifying circuit along with the increase of the power of the radio frequency signal input signal, so that the OP1dB is increased; the invention dynamically adjusts the power consumption of the low noise amplifier while ensuring the stable bias voltage of the low noise amplifier, provides higher OP1dB than the conventional amplifier, but does not increase static power consumption, thereby solving the contradictory relation between the OP1dB and the power consumption of the amplifier circuit.
Description
Technical Field
The present invention relates to the field of microelectronics, semiconductors, and communications technologies, and in particular, to a dynamic bias method and system for a low noise amplifier, and a dynamic bias circuit.
Background
The Output 1dB compression point (OP 1dB, output 1dB Compression Point, which is replaced by OP1dB later) is a linearity index of the rf device, and is also an important characteristic of the low noise amplifier, and its level determines the linearity of the low noise amplifier.
Conventional radio frequency links require low noise amplifiers to have low noise, low power consumption, high OP1dB, etc., but in general, the low power consumption and high OP1dB of the amplifier cannot be combined, i.e., only one of the low power consumption and high OP1dB can be obtained.
The OP1dB of the low noise amplifier is related to its static bias voltage, and the conventional method for increasing the OP1dB of the low noise amplifier is to increase the static bias voltage of the amplifier, that is, increase the OP1dB by increasing the static current, but this method increases the power consumption of the amplifier circuit. The prior art has the defects.
Disclosure of Invention
The invention mainly solves the technical problem of providing a dynamic bias method of a low noise amplifier, which improves the OP1dB on the basis of not increasing the static power consumption of the low noise amplifier, thereby solving the contradictory relation between the OP1dB and the power consumption of an amplifier circuit; the invention also provides a dynamic biasing system and a dynamic biasing circuit of the low noise amplifier.
In order to solve the technical problems, the invention adopts a technical scheme that: the dynamic bias method of the low noise amplifier comprises the steps that radio frequency signals respectively enter a dynamic bias circuit and a main amplification circuit, and the bias of the main amplification circuit is provided by the dynamic bias circuit; when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, and the bias voltage of the main amplifying circuit is fixed; when a radio frequency signal is input, the dynamic bias circuit dynamically adjusts the bias voltage of the main amplifying circuit along with the increase of the power of the radio frequency input signal, so that the output 1dB compression point is improved.
As an improvement of the invention, the radio frequency signal is divided into two paths of signals of path1 and path2 after entering from the RFin, the path2 signal is outputted by the RFout after passing through the main amplifying circuit, part of the signal of the path2 signal leaks to the feedback loop to become a path3 signal, and the path3 signal and the path1 signal are input into the dynamic biasing circuit together.
The dynamic bias system of the low noise amplifier comprises a main amplifying circuit, a dynamic bias circuit and a feedback loop, wherein the feedback loop is electrically connected with the main amplifying circuit and the dynamic bias circuit respectively; the radio frequency signal enters a dynamic bias circuit and a main amplifying circuit respectively, and the bias of the main amplifying circuit is provided by the dynamic bias circuit; when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, the bias voltage of the main amplification circuit is fixed, when the radio frequency signal is input, the dynamic bias circuit dynamically regulates the bias voltage of the main amplification circuit along with the power of the radio frequency signal input signal, and the output 1dB compression point is improved by improving the bias voltage.
As a further improvement of the invention, a load is also included that is electrically connected to the main amplifying circuit.
As a further improvement of the invention, the dynamic bias circuit comprises a field effect tube M2, a field effect tube M3, a resistor R1, a resistor R2 and a resistor R3, wherein the power supply voltage VDD is connected with the drain electrode of the field effect tube M2 through the resistor R1, one end of the resistor R2 is connected with the drain electrode of the field effect tube M2, the grid electrode of the field effect tube M2 is connected with the other end of the resistor R2 and one end of the resistor R3, the source electrode of the field effect tube M2 is grounded, the other end of the resistor R3 is connected with the grid electrode of the field effect tube M3, and the drain electrode of the field effect tube M3 is connected with the source electrode.
As a further improvement of the present invention, the main amplifying circuit includes a field effect transistor M1.
As a further development of the invention, the feedback loop comprises a resistor R4 and a capacitor C1.
As a further improvement of the invention, after the radio frequency signal enters from the RFin, the radio frequency signal is divided into two paths of signals of path1 and path2, the path2 signal is output from the RFout after passing through the main amplifying circuit, part of the signal of the path2 signal leaks to the feedback loop to form a path3 signal, the path3 signal and the path1 signal are input into the dynamic biasing circuit together, so as to enter the field effect transistor M3, a forward voltage is output from the grid electrode of the field effect transistor M3 to the drain electrode and the source electrode thereof, the forward voltage is overlapped with the output voltage of the dynamic biasing circuit, when the forward voltage is increased, the bias voltage of the dynamic biasing circuit is also increased, so that the current of the main amplifying circuit is increased, and the output 1dB compression point of the main amplifying circuit is increased.
The utility model provides a dynamic bias circuit of low noise amplifier, wherein, including field effect tube M2, field effect tube M3, resistance R1, resistance R2 and resistance R3, power supply voltage VDD passes through resistance R1 and links to each other with field effect tube M2's drain electrode, resistance R2's one end links to each other with field effect tube M2's drain electrode, field effect tube M2's grid links to each other with resistance R2's the other end, resistance R3's one end, field effect tube M2's source electrode ground, resistance R3's the other end links to each other with field effect tube M3's grid, field effect tube M3's drain electrode links to each other with the source electrode.
The beneficial effects of the invention are as follows: compared with the prior art, when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, and the bias voltage of the circuit is fixed; when a radio frequency signal is input, the dynamic bias circuit dynamically adjusts (improves) the bias voltage of the main amplifying circuit along with the increase of the power of the radio frequency input signal, so that the output 1dB compression point (OP 1 dB) is improved; the invention can dynamically adjust the power consumption of the low noise amplifier under the condition of ensuring the stable bias voltage of the low noise amplifier, provides higher OP1dB than the conventional amplifier, and does not increase static power consumption, thereby solving the contradictory relation between the OP1dB and the power consumption of the amplifier circuit.
Drawings
FIG. 1 is a circuit diagram of a dynamic biasing system for a low noise amplifier according to a first embodiment of the present invention;
FIG. 2 is a circuit diagram of a second embodiment of a dynamic biasing system for a low noise amplifier according to the present invention;
FIG. 3 is a circuit diagram of a third embodiment of a dynamic biasing system for a low noise amplifier of the present invention;
FIG. 4 is a circuit diagram of a fourth embodiment of a dynamic biasing system for a low noise amplifier of the present invention;
fig. 5 is a graph showing the variation of the gate voltage vgg of the fet M1 according to the present invention with the input power;
FIG. 6 is a graph of the gate voltage vgg at different frequencies in accordance with the present invention;
FIG. 7 is a graph showing the variation of output power with input power according to the present invention;
fig. 8 is a schematic diagram of OP1dB using different bias circuits in accordance with the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1 to 8, the dynamic bias method of the low noise amplifier of the present invention includes that radio frequency signals respectively enter a dynamic bias circuit and a main amplification circuit, and the bias of the main amplification circuit is provided by the dynamic bias circuit; when no radio frequency signal is input, the dynamic bias circuit is fixed, and when the radio frequency signal is input, the dynamic bias circuit dynamically adjusts the bias voltage of the main amplifying circuit along with the increase of the input power of the radio frequency signal, so that the bias voltage is improved to improve the output 1dB compression point.
In the invention, after the radio frequency signal enters from the RFin, the radio frequency signal is divided into two paths of signals of a path1 and a path2, the path2 signal is output by the RFout after passing through the main amplifying circuit, part of the signal of the path2 signal leaks to the feedback loop to form a path3 signal, and the path3 signal is coupled to the path1 signal of the dynamic biasing circuit through the feedback loop.
In the invention, when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, and the bias voltage of the circuit is fixed; when a radio frequency signal is input, the dynamic bias circuit dynamically adjusts (improves) the bias voltage of the main amplifying circuit along with the increase of the power of the radio frequency input signal, so that the output 1dB compression point (OP 1 dB) is improved; the invention can dynamically adjust the power consumption of the low noise amplifier under the condition of ensuring the stable bias voltage of the low noise amplifier, provides higher OP1dB than the conventional amplifier, and does not increase the static power consumption of the circuit, thereby solving the contradictory relation between the OP1dB and the power consumption of the amplifier circuit.
The invention provides a dynamic bias system of a low-noise amplifier, which comprises a main amplifying circuit, a dynamic bias circuit and a feedback loop, wherein the feedback loop is electrically connected with the main amplifying circuit and the dynamic bias circuit respectively; further, the circuit further comprises a load electrically connected with the main amplifying circuit.
In the invention, the dynamic bias circuit comprises a field effect tube M2, a field effect tube M3, a resistor R1, a resistor R2 and a resistor R3, wherein a power supply voltage VDD is connected with the drain electrode of the field effect tube M2 through the resistor R1, one end of the resistor R2 is connected with the drain electrode of the field effect tube M2, the grid electrode of the field effect tube M2 is connected with the other end of the resistor R2 and one end of the resistor R3, the source electrode of the field effect tube M2 is grounded, the other end of the resistor R3 is connected with the grid electrode of the field effect tube M3, and the drain electrode of the field effect tube M3 is connected with the source electrode.
In the present invention, the main amplifying circuit includes a field effect transistor M1.
In the present invention, the feedback loop includes a resistor R4 and a capacitor C1.
In the invention, radio frequency signals respectively enter a dynamic bias circuit and a main amplifying circuit, and the bias of the main amplifying circuit is provided by the dynamic bias circuit; when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, and the bias voltage of the circuit is fixed; when a radio frequency signal is input, the dynamic bias circuit dynamically adjusts (improves) the bias voltage of the main amplifying circuit along with the increase of the power of the radio frequency input signal, so that the output 1dB compression point (OP 1 dB) is improved.
Specifically, after the radio frequency signal enters from the RFin, the radio frequency signal is divided into two paths of signals of a path1 and a path2, the path2 signal is output by the RFout after passing through the main amplifying circuit, part of signals of the path2 signal are leaked to the feedback loop to form a path3 signal, and the path3 signal and the path1 signal are input into the dynamic bias circuit together, so that the radio frequency signal enters into the field effect transistor M3. Since the FET transistor with source-drain connection has rectifying action, a forward voltage is outputted from the gate to the drain and source of the field effect transistor M3, and this voltage is superimposed with the original circuit voltage. When this voltage increases, the bias voltage of the dynamic bias circuit also increases, so that the current of the main amplification circuit increases, thereby increasing the output 1dB compression point of the main amplification circuit.
In the first embodiment, as shown in fig. 1, a radio frequency signal is input from an RFin, the signal is divided into two paths of a path1 and a path2, after passing through a main amplifying circuit, the path2 signal is output from an RFout, part of the signal of the path2 signal leaks into a feedback loop to form a path3 signal, and the path3 signal and the path1 signal are input into a dynamic biasing circuit together, so that the signal enters a field effect transistor M3; specifically, the static bias voltage vgg of the low noise amplifier is provided by a bias circuit, the power supply voltage VDD is connected with the drain electrode of the field effect transistor M2 through a resistor R1, the drain electrode and the gate electrode of the field effect transistor M2 are connected through a resistor R2, the gate electrode of the field effect transistor M2 is connected with the gate electrode of the field effect transistor M1 through a resistor R3, a resistor R4 and the field effect transistor M3, namely, a current mirror is formed by the field effect transistors M1 and M2, wherein the field effect transistor M3 is in a schottky diode connection form, namely, the drain electrode D3 of the field effect transistor M3 is connected with the source electrode S3 as a negative electrode, the positive electrode is G3, according to the salsa Zhi Tang equation, the static bias voltage vgg can be adjusted by adjusting the proportion of the field effect transistor M2 and the field effect transistor M1, and then the current flowing through the field effect transistor M1 is adjusted, and when no radio frequency signal is input, the output voltage of the dynamic bias circuit is a fixed value v1; the input signal RF is divided into two paths of signals of a path1 and a path2, wherein the path1 signal enters a field effect transistor M3 after passing through a resistor R4; similarly, part of the signals of the path2 signals leak to the feedback loop to form path3 signals, the path3 signals and the path1 signals are input into the dynamic bias circuit together, so that the signals enter the field effect transistor M3, the Schottky diode connection mode M3 has a rectification function, after the signals enter the field effect transistor M3 exceed the forward starting voltage of the field effect transistor M3, a forward voltage v2 is output at the point of a drain electrode D3 and a source electrode S3 of the field effect transistor M3 due to the rectification function of the field effect transistor M3, after radio frequency signals are added, the voltage vgg =v1+v2 of a grid electrode G1 of the field effect transistor M1 is gradually increased along with the gain of input power, the bias voltage vgg is also increased, and the output current of the amplifier is increased, so that the output P1dB of the main amplifying circuit is further improved.
The invention provides a second embodiment of a dynamic bias system of a low noise amplifier, in which a circuit connection structure of the second embodiment is different from that of the first embodiment in that an access point of a dynamic bias circuit is different, a bias voltage of the dynamic bias circuit in the second embodiment is directly connected with a gate G1 of a field effect transistor M1, a resistor and a capacitor of a feedback loop are connected in series between a drain D1 of the field effect transistor M1 and the field effect transistor M3, and in particular, as shown in fig. 2, the access point of the dynamic bias circuit in fig. 2 is different from that of the dynamic bias circuit in fig. 1: the bias voltage of the dynamic bias circuit in fig. 1 is connected with the common port of the resistor and the capacitor of the feedback loop, and fig. 2 is directly connected with the grid electrode of the field effect transistor M1, and the connection mode can improve the noise coefficient of the circuit.
In the third embodiment, a drain electrode D3 and a source electrode S3 of a field effect transistor M3 are commonly connected with a resistor R4 and a gate electrode of the field effect transistor M1, a radio frequency signal is output from an RFout through a feedback loop, for example, a gate electrode G2 and a drain electrode D2 of a bias circuit tube M2 of fig. 3 are connected through R2 and led out from a G2 end, and are connected into a main circuit through R2, and other circuits in the third embodiment have the same circuit structure as those in the second embodiment.
The invention provides a fourth embodiment of a dynamic bias system of a low noise amplifier, as shown in fig. 4, a grid electrode G2 and a drain electrode D2 of a field effect transistor M2 of a dynamic bias circuit are connected through a resistor R2, and are led out from a drain electrode D2 end of the field effect transistor M2 of the dynamic bias circuit, and are connected into a main circuit through the resistor R2, and other circuits in the fourth embodiment have the same circuit structure as the second embodiment.
As shown in fig. 5, the gate voltage vgg of the fet M1 increases with the rf input power, and its voltage value increases relative to the bias voltage of the normal bias circuit.
As shown in fig. 6, the gate voltage vgg of the fet M1 has significantly improved bias voltage values at different frequency points relative to the bias voltage of the normal bias circuit under a certain input power.
As shown in fig. 7, the output power of the amplifier using the dynamic bias circuit is more linear with the change of the input power, that is, OP1dB is higher, compared with the change of the input power with the output power of the amplifier using the normal bias circuit.
As shown in fig. 8, at a certain input power, the bias voltage of an amplifier using a dynamic bias circuit is higher than that of an amplifier using a normal bias circuit.
The invention also provides a dynamic bias circuit of the low-noise amplifier, which comprises a field effect tube M2, a field effect tube M3, a resistor R1, a resistor R2 and a resistor R3, wherein the power supply voltage VDD is connected with the drain electrode of the field effect tube M2 through the resistor R1, one end of the resistor R2 is connected with the drain electrode of the field effect tube M2, the grid electrode of the field effect tube M2 is connected with the other end of the resistor R2 and one end of the resistor R3, the source electrode of the field effect tube M2 is grounded, the other end of the resistor R3 is connected with the grid electrode of the field effect tube M3, and the drain electrode of the field effect tube M3 is connected with the source electrode.
In the invention, when no radio frequency signal is input, the dynamic bias circuit does not work, the bias voltage of the low noise amplifier is at a lower level, the static power consumption of the circuit is low, as the radio frequency input power is increased, the dynamic bias circuit dynamically adjusts (improves) the bias voltage of the main amplifier circuit along with the increase of the radio frequency input signal power, thereby improving the output 1dB compression point (OP 1 dB), and increasing the dynamic current of the low noise amplifier, thereby improving the OP1dB of the low noise amplifier, wherein the radio frequency signal enters from RFin, passes through the main amplifier circuit and is finally output from RFout, and the bias of the main amplifier circuit is provided by the dynamic bias circuit.
Compared with the traditional bias circuit, the bias voltage stability of the low-noise amplifier can be ensured, the power consumption of the low-noise amplifier circuit can be dynamically regulated, the OP1dB higher than that of the conventional amplifier is provided, and the static power consumption is not increased.
The foregoing description is only of embodiments of the present invention, and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (6)
1. The dynamic bias method of the low noise amplifier is characterized in that radio frequency signals respectively enter a dynamic bias circuit and a main amplification circuit, and the bias voltage of the main amplification circuit is provided by the dynamic bias circuit; the field effect transistor M3 in the dynamic bias circuit is arranged in a Schottky diode connection mode, the drain electrode D3 of the field effect transistor M3 is connected with the source electrode S3 to serve as a negative electrode to be connected with the radio frequency signal, and the positive electrode is G3; when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, and the bias voltage of the main amplifying circuit is fixed; when a radio frequency signal is input, the dynamic bias circuit dynamically adjusts the bias voltage of the main amplifying circuit along with the increase of the power of the radio frequency input signal, so that the output 1dB compression point is improved;
the dynamic bias circuit comprises a field effect tube M2, a field effect tube M3, a resistor R1, a resistor R2 and a resistor R3, wherein a power supply voltage VDD is connected with the drain electrode of the field effect tube M2 through the resistor R1, one end of the resistor R2 is connected with the drain electrode of the field effect tube M2, the grid electrode of the field effect tube M2 is connected with the other end of the resistor R2 and one end of the resistor R3, the source electrode of the field effect tube M2 is grounded, the other end of the resistor R3 is connected with the grid electrode of the field effect tube M3, and the drain electrode of the field effect tube M3 is connected with the source electrode.
2. The method for dynamically biasing a low noise amplifier according to claim 1, wherein the radio frequency signal is divided into two paths of path1 and path2 signals after entering from the RFin, the path2 signal is outputted from the RFout after passing through the main amplifying circuit, a part of the path2 signal leaks into the feedback loop to become a path3 signal, and the path3 signal and the path1 signal are inputted into the dynamic biasing circuit together.
3. The dynamic bias system of the low-noise amplifier is characterized by comprising a main amplifying circuit, a dynamic bias circuit and a feedback loop, wherein the feedback loop is electrically connected with the main amplifying circuit and the dynamic bias circuit respectively; the radio frequency signal enters a dynamic bias circuit and a main amplifying circuit respectively, and the bias of the main amplifying circuit is provided by the dynamic bias circuit; the field effect transistor M3 in the dynamic bias circuit is arranged in a Schottky diode connection mode, the drain electrode D3 of the field effect transistor M3 is connected with the source electrode S3 to serve as a negative electrode to be connected with the radio frequency signal, and the positive electrode is G3; when no radio frequency signal is input, the dynamic bias circuit does not play a role in regulation, the bias voltage of the main amplification circuit is fixed, when the radio frequency signal is input, the dynamic bias circuit dynamically regulates the bias voltage of the main amplification circuit along with the increase of the power of the radio frequency input signal, and the output 1dB compression point is improved by improving the bias voltage;
the dynamic bias circuit comprises a field effect tube M2, a field effect tube M3, a resistor R1, a resistor R2 and a resistor R3, wherein a power supply voltage VDD is connected with the drain electrode of the field effect tube M2 through the resistor R1, one end of the resistor R2 is connected with the drain electrode of the field effect tube M2, the grid electrode of the field effect tube M2 is connected with the other end of the resistor R2 and one end of the resistor R3, the source electrode of the field effect tube M2 is grounded, the other end of the resistor R3 is connected with the grid electrode of the field effect tube M3, and the drain electrode of the field effect tube M3 is connected with the source electrode;
the main amplifying circuit comprises a field effect transistor M1.
4. A dynamic biasing system for a low noise amplifier according to claim 3, further comprising a load electrically connected to said main amplifying circuit.
5. A dynamic biasing system for a low noise amplifier according to claim 3, wherein the feedback loop comprises a resistor R4 and a capacitor C1.
6. The dynamic bias system of a low noise amplifier according to claim 5, wherein the radio frequency signal is divided into two paths of signals of path1 and path2 after entering from the RFin, the path2 signal is outputted from the RFout after passing through the main amplifying circuit, part of the path2 signal leaks to the feedback loop to form a path3 signal, the path3 signal and the path1 signal are input into the dynamic bias circuit together, so as to enter the field effect transistor M3, a forward voltage is outputted from the gate of the field effect transistor M3 to the drain and source thereof, the forward voltage is superposed with the output voltage of the dynamic bias circuit, and when the forward voltage is increased, the bias voltage outputted from the dynamic bias circuit is also increased, so that the current of the main amplifying circuit is increased, and the output 1dB compression point of the main amplifying circuit is increased.
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| CN102969995A (en) * | 2012-11-23 | 2013-03-13 | 锐迪科创微电子（北京）有限公司 | Dynamic offset control circuit applied to linear mode power amplifier |
| CN106374843A (en) * | 2016-10-18 | 2017-02-01 | 广西师范大学 | Low-power consumption high-gain low-noise amplifier and operation method thereof |
| WO2018054151A1 (en) * | 2016-09-26 | 2018-03-29 | 深圳市华讯方舟卫星通信有限公司 | Low-noise amplifier circuit |
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| CN115580233A (en) | 2023-01-06 |
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