CN115529017B - Broadband balun impedance converter and electronic product comprising same - Google Patents
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Abstract
The broadband balun impedance converter has a simple structure by vertically stacking or internally and externally nesting the broadband differential impedance converter and the broadband balun, effectively reduces the area of the broadband balun impedance converter, reduces the cost and improves the performance of the broadband balun impedance converter.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a broadband balun impedance converter and an electronic product comprising the same.
Background
In the current mobile communication standard, multiple modes of 2G/3G/4G coexist and are widely used, and each different mode includes multiple different frequency bands (bands) to meet the deployment requirements of communication frequency bands in different regions and countries. Uplink communication in the 2G GSM (Global System for Mobile Communications ) communication mode includes 4 frequency bands, which are: GSM850:824-849MHz; GSM900:880-915MHz; DCS1800:1710-1785MHz; PCS1900:1850-1910MHz; typically, all power amplifiers of the mobile terminal need to support these 4 frequency bands of the 2G GSM communication mode. The 3G and 4G modes include more different frequency bands, for example: band-5, band-8, band-1, band-2, band-7, band-38, band-41, and the like. The definition of the common frequency band of 2G/3G/4G is shown in Table 1.
TABLE 1 common band definition
In order to better meet the communication requirements of people, current mobile intelligent terminals need to support a plurality of different frequency bands, which requires that a radio frequency front-end device in the mobile intelligent terminal has the capability of supporting a plurality of different frequency bands. Balun, a balun, is an important component in an rf front end to implement differential-to-single-ended (or single-ended-to-differential) conversion of rf signals.
However, the existing balun structure has a large area and a narrow coverage frequency range, and is far from covering all communication frequency bands required by 2G/3G/4G mobile communication.
Disclosure of Invention
The invention aims to provide a broadband balun impedance converter with reduced area and simplified structure.
In order to solve the above problem, the present invention provides a broadband balun impedance converter, including:
the broadband balun comprises a plurality of coupling coil pairs, and at least one coupling coil pair;
the broadband balun comprises a first medium layer group and a second medium layer group which are stacked up and down, wherein the first medium layer group and the second medium layer group respectively comprise a plurality of medium layers which are stacked up and down, metal routing layers and communication holes are arranged in the medium layers, two adjacent metal routing layers are connected through the communication holes, the medium layers in the first medium layer group are connected in pairs to form a coupling coil pair of the broadband differential impedance converter, and the medium layers in the second medium layer group are connected in pairs to form a coupling coil pair of the broadband balun.
In one embodiment of the present invention, the wideband differential impedance converter includes a first coupling coil pair and a second coupling coil pair, the first coupling coil pair includes a first coupling coil and a second coupling coil, the second coupling coil pair includes a third coupling coil and a fourth coupling coil, the wideband balun includes a third coupling coil pair, and the third coupling coil pair includes a fifth coupling coil and a sixth coupling coil;
a first end of the second coupling coil and a first end of the third coupling coil are both connected to a first balanced signal port of the broadband balun impedance transformer, a second end of the second coupling coil is connected to a first input port of the broadband balun, and a second end of the third coupling coil is connected with a second end of the first coupling coil and grounded;
the first end of the first coupling coil and the first end of the third coupling coil are both connected to a second balanced signal port of the broadband balun impedance transformer, and the second end of the third coupling coil is connected to a second input port of the broadband balun;
the first end of the fifth coupling coil is connected to the second input port of the broadband balun, the second end of the fifth coupling coil is grounded, the first end of the sixth coupling coil is connected to the first input port of the broadband balun, and the second end of the sixth coupling coil is connected to the unbalanced port of the broadband balun impedance transformer.
In an embodiment of the present invention, the wideband balun impedance converter further includes a choke inductor and a decoupling capacitor, and the second end of the third coupling coil and the second end of the first coupling coil are connected to the feed port through the choke inductor and grounded through the decoupling capacitor.
In one embodiment of the present invention, the first dielectric layer group is stacked on the second dielectric layer group, or the second dielectric layer group is stacked on the first dielectric layer group.
In an embodiment of the present invention, the broadband balun impedance converter further includes a high-resistance substrate, the dielectric layer is disposed on the high-resistance substrate, and a resistivity of the high-resistance substrate is higher than 1000ohm cm.
The invention also provides a broadband balun impedance converter, comprising:
the broadband balun comprises a plurality of coupling coil pairs, and at least one coupling coil pair;
the broadband balun comprises a first medium layer group and a second medium layer group which are nested inside and outside, wherein the first medium layer group and the second medium layer group respectively comprise a plurality of medium layers which are stacked up and down, metal routing layers and communication holes are arranged in the medium layers, two adjacent metal routing layers are connected through the communication holes, the medium layers in the first medium layer group are connected in pairs to form a coupling coil pair of the broadband differential impedance converter, and the medium layers in the second medium layer group are connected in pairs to form a coupling coil pair of the broadband balun.
In one embodiment of the invention, the first dielectric layer group is nested in the second dielectric layer group, so that the coupling coil pair of the broadband differential impedance transformer surrounds the inner ring, and the coupling coil pair of the broadband balun surrounds the outer ring; or,
the second medium layer group is nested in the first medium layer group, so that the coupling coil pair of the broadband balun surrounds the inner ring, and the coupling coil pair of the broadband differential impedance converter surrounds the outer ring.
In one embodiment of the present invention, the wideband differential impedance converter includes a first coupling coil pair and a second coupling coil pair, the first coupling coil pair includes a first coupling coil and a second coupling coil, the second coupling coil pair includes a third coupling coil and a fourth coupling coil, the wideband balun includes a third coupling coil pair, and the third coupling coil pair includes a fifth coupling coil and a sixth coupling coil;
a first end of the second coupling coil and a first end of the third coupling coil are both connected to a first balanced signal port of the broadband balun impedance transformer, a second end of the second coupling coil is connected to a first input port of the broadband balun, and a second end of the third coupling coil is connected with a second end of the first coupling coil and grounded;
the first end of the first coupling coil and the first end of the third coupling coil are both connected to a second balanced signal port of the broadband balun impedance transformer, and the second end of the third coupling coil is connected to a second input port of the broadband balun;
the first end of the fifth coupling coil is connected to the second input port of the broadband balun, the second end of the fifth coupling coil is grounded, the first end of the sixth coupling coil is connected to the first input port of the broadband balun, and the second end of the sixth coupling coil is connected to the unbalanced port of the broadband balun impedance transformer.
In an embodiment of the present invention, the wideband balun impedance converter further includes a choke inductor and a decoupling capacitor, and the second end of the third coupling coil and the second end of the first coupling coil are connected to the feed port through the choke inductor and grounded through the decoupling capacitor.
The invention also provides an electronic product comprising the broadband balun impedance converter.
The invention has the beneficial effects that:
according to the broadband balun impedance converter, the broadband differential impedance converter and the broadband balun are stacked up and down or nested inside and outside, so that the broadband balun impedance converter is simple in structure, the area of the broadband balun impedance converter is effectively reduced, the cost is reduced, and the performance of the broadband balun impedance converter is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are specifically described below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic process diagram of a wideband balun impedance transformer in an embodiment of the present invention;
FIG. 2 is a three-dimensional block diagram of a wideband balun impedance transformer in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a wideband balun impedance transformer in an embodiment of the present invention;
FIG. 4 is a frequency response curve of a wideband balun impedance transformer in an embodiment of the present invention;
fig. 5 is a plan view of a wideband balun impedance transformer in another embodiment of the present invention;
fig. 6 is an electromagnetic simulation parameter diagram of a broadband balun impedance transformer in another embodiment of the present invention.
Description of the labeling:
401. a broadband differential impedance transformer; 402. a broadband balun; 403. a first coupling coil; 404. a second coupling coil; 405. a third coupling coil; 406. a fourth coupling coil; 408. a fifth coupling coil; 409. a sixth coupling coil; 410. a choke inductance; 411. and a decoupling capacitor.
Detailed Description
The present invention is further described below in conjunction with the drawings and the embodiments so that those skilled in the art can better understand the present invention and can carry out the present invention, but the embodiments are not to be construed as limiting the present invention.
Example one
As shown in fig. 1 to 3, the present embodiment discloses a broadband balun impedance converter, including:
the broadband differential impedance transformer 401 and the broadband balun 402 are cascaded, the broadband differential impedance transformer 401 comprises a first coupling coil pair and a second coupling coil pair, and the broadband balun 402 comprises a third coupling coil pair;
the first medium layer group and the second medium layer group are stacked up and down, the first medium layer group and the second medium layer group respectively comprise a plurality of medium layers stacked up and down, metal routing layers and communicating holes are arranged in the medium layers, two adjacent metal routing layers are connected through the communicating holes, every two medium layers in the first medium layer group are connected to form the first coupling coil pair and the second coupling coil pair, and every two medium layers in the second medium layer group are connected to form the third coupling coil pair.
Optionally, the first dielectric layer group is stacked on the second dielectric layer group, that is, the wideband differential impedance transformer 401 is stacked on the wideband balun 402; alternatively, the second dielectric layer group is stacked on the first dielectric layer group, that is, the wideband balun 402 is stacked on the wideband differential impedance transformer 401.
Referring to fig. 2, taking 10 dielectric layers, a second dielectric layer group is stacked on a first dielectric layer group as an example; the 10 dielectric layers comprise a dielectric layer M1, a dielectric layer M2, a dielectric layer M3, a dielectric layer M4, a dielectric layer M5, a dielectric layer M6, a dielectric layer M7, a dielectric layer M8, a dielectric layer M9 and a dielectric layer M10.
The dielectric layer M1, the dielectric layer M2, the dielectric layer M3, the dielectric layer M4, the dielectric layer M5, the dielectric layer M6, the dielectric layer M7, the dielectric layer M8, the dielectric layer M9 and the dielectric layer M10 are sequentially stacked from top to bottom, a wiring layer Cu1 is arranged in the dielectric layer M1, a wiring layer Cu2 and a communication hole D12 are arranged in the dielectric layer M2, a wiring layer Cu3 and a communication hole D23 are arranged in the dielectric layer M3, a wiring layer Cu4 and a communication hole D34 are arranged in the dielectric layer M4, a wiring layer Cu5 and a communication hole D45 are arranged in the dielectric layer M5, a wiring layer Cu6 and a communication hole D56 are arranged in the dielectric layer M6, a wiring layer Cu7 and a communication hole D67 are arranged in the dielectric layer M7, a wiring layer Cu8 and a communication hole D78 are arranged in the dielectric layer M8, a wiring layer Cu9 and a communication hole D89 are arranged in the dielectric layer M9, and a wiring layer Cu10 and a communication hole D910 are arranged in the dielectric layer M10.
Alternatively, the dielectric layer M5, the via hole D56, the dielectric layer M6, the via hole D67, the dielectric layer M7, the via hole D78, the dielectric layer M8, the via hole D89, the dielectric layer M9, the via hole D910, and the dielectric layer M10 constitute the first coupling coil pair and the second coupling coil pair. Specifically, the dielectric layer M7 is connected in series with the dielectric layers M5 and M9, respectively, to form two coupling coils, and the dielectric layer M8 is connected in series with the dielectric layers M6 and M10, respectively, to form two coupling coils.
The dielectric layer M1, the via hole D12, the dielectric layer M2, the via hole D23, the dielectric layer M3, the via hole D34, and the dielectric layer M4 constitute the third coupling coil pair. Specifically, the dielectric layer M1 and the dielectric layer M3 are connected in series, and the dielectric layer M2 and the dielectric layer M4 are connected in series to form two coupling coils.
Furthermore, the broadband balun impedance converter further comprises a high-resistance substrate, the dielectric layer is arranged on the high-resistance substrate, and the resistivity of the high-resistance substrate is higher than 1000ohm cm.
Optionally, the dielectric layer may comprise a dielectric material (e.g., ferrite material) having a relatively high magnetic permeability to improve the magnetic coupling coefficient of the coupled coil pair, improve the performance of the wideband balun impedance transformer, and reduce its physical size.
As shown in fig. 2, which is a three-dimensional schematic diagram of a technically implemented wideband balun impedance converter, a coupling coil pair is formed by spiral metal wires on different metal wire layers, and the coupling coil pair meeting requirements can be implemented by designing the geometric style and length of each spiral metal wire structure.
As shown in fig. 3, in the present embodiment, the first coupling coil pair includes a first coupling coil 403 and a second coupling coil 404, the second coupling coil pair includes a third coupling coil 405 and a fourth coupling coil 406, and the third coupling coil 405 pair includes a fifth coupling coil 408 and a sixth coupling coil 409.
A first end of the second coupling coil 404 and a first end of the third coupling coil 405 are both connected to a first balanced signal port Bal1 of the broadband balun impedance transformer, a second end of the second coupling coil 404 is connected to a first input port of the broadband balun 402, and a second end of the third coupling coil 405 is connected to a second end of the first coupling coil 403 and grounded; a first end of the first coupling coil 403 and a first end of the third coupling coil 405 are both connected to a second balanced signal port Bal2 of the broadband balun impedance transformer, and a second end of the third coupling coil 405 is connected to a second input port of the broadband balun 402; a first end of the fifth coupling coil 408 is connected to the second input port of the wideband balun 402, a second end of the fifth coupling coil 408 is grounded, a first end of the sixth coupling coil 409 is connected to the first input port of the wideband balun 402, and a second end of the sixth coupling coil 409 is connected to the unbalanced port un b of the wideband balun impedance transformer.
The broadband balun impedance converter further comprises a choke inductor 410 and a decoupling capacitor 411, and the second end of the third coupling coil 405 and the second end of the first coupling coil 403 are connected to the feeding port VDD through the choke inductor 410 and grounded through the decoupling capacitor 411.
The broadband balun 402 has an impedance transformation ratio of 1, that is, a single-ended load impedance Z1 of the unbalanced port un b is transformed into a balanced differential impedance Z2 between the first input port and the second input port thereof, and Z1= Z2 is satisfied; the broadband differential impedance transformer 401 has an impedance transformation ratio of 1. For example, when Z1=50ohm, Z2=50ohm, z3=12.5ohm are satisfied. The broadband balun impedance converter can be used as an output impedance matching network of a broadband differential power amplifier, namely a first balanced signal port Bal1 and a second balanced signal port Bal2 of the broadband balun impedance converter are respectively connected to two differential output ports of the differential power amplifier; the feed port VDD, the decoupling capacitor 411, and the choke inductor 410 form a power supply network of the differential power amplifier.
Fig. 4 shows a frequency response curve of the wideband balun impedance transformer in the embodiment of the present invention. It can be seen that in the frequency range of 700MHz-7GHz, the wideband balun impedance transformer not only has low insertion loss of less than 0.8dB, but also has amplitude balance characteristics of less than 0.25dB and phase balance characteristics of less than 1 ° over the entire wideband range, and at the same time, achieves wideband single-ended to differential impedance conversion.
According to the broadband balun impedance converter, the broadband differential impedance converter and the broadband balun are stacked up and down, so that the area of the broadband balun impedance converter is effectively reduced, the structure is simple, the cost is reduced, and the performance of the broadband balun impedance converter is improved.
Example two
As shown in fig. 5, the present embodiment discloses a wideband balun impedance converter, which includes:
the broadband differential impedance transformer 401 and the broadband balun 402 are cascaded, the broadband differential impedance transformer 401 comprises a first coupling coil pair and a second coupling coil pair, and the broadband balun 402 comprises a third coupling coil pair;
the first medium layer group and the second medium layer group are internally and externally nested, the first medium layer group and the second medium layer group respectively comprise a plurality of medium layers which are stacked up and down, metal routing layers and communication holes are arranged in the medium layers, two adjacent metal routing layers are connected through the communication holes, the medium layers in the first medium layer group are connected in pairs to form the first coupling coil pair and the second coupling coil pair, and the medium layers in the second medium layer group are connected in pairs to form the third coupling coil pair.
The first dielectric layer group is nested in the second dielectric layer group, so that the first coupling coil pair and the second coupling coil pair surround the inner circle, and the third coupling coil pair surrounds the outer circle, namely the broadband differential impedance transformer 401 is nested in the broadband balun 402; alternatively, the second dielectric layer group is nested in the first dielectric layer group, so that the third coupling coil pair surrounds the inner coil, and the first coupling coil pair and the second coupling coil pair surround the outer coil, that is, the wideband balun 402 is nested in the wideband differential impedance converter 401.
A schematic diagram of the broadband balun impedance converter in this embodiment can be seen in fig. 3. That is, the schematic diagram of the wideband balun impedance converter in fig. 3 can be implemented by stacking the wideband differential impedance converter and the wideband balun up and down in the first embodiment, or by nesting the wideband differential impedance converter and the wideband balun inside and outside in the second embodiment.
The size of the broadband balun impedance transformer adopting the nested structure in the embodiment is about 2.5mm × 2.5mm, while the size of the existing balun structure is about 5mm × 5mm. The area can be reduced by 75%, and the cost is lower.
As shown in fig. 6, it is an electromagnetic simulation parameter diagram of the wideband balun impedance transformer in this embodiment, and the covered frequency band is wider. In the frequency band of 30MHz-600MHz, S21 (transmission coefficient from input port to output port) is larger than 22.8dB, and S11 (return loss of input port) is smaller than-11 dB, which shows that the broadband balun impedance converter has good isolation characteristic and better return loss performance while realizing broadband characteristic, and can provide higher saturation power.
EXAMPLE III
The embodiment discloses an electronic product, which comprises the broadband balun impedance converter in the first embodiment or the second embodiment.
The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (8)
1. A wideband balun impedance transformer comprising:
a wideband differential impedance transformer and a wideband balun in cascade, the wideband differential impedance transformer comprising a plurality of coupled coil pairs, the wideband balun comprising at least one coupled coil pair;
the broadband balun comprises a first medium layer group and a second medium layer group which are stacked up and down, wherein the first medium layer group and the second medium layer group respectively comprise a plurality of medium layers which are stacked up and down, metal routing layers and communication holes are arranged in the medium layers, two adjacent metal routing layers are connected through the communication holes, the medium layers in the first medium layer group are connected in pairs to form a coupling coil pair of the broadband differential impedance converter, and the medium layers in the second medium layer group are connected in pairs to form a coupling coil pair of the broadband balun;
the broadband differential impedance transformer comprises a first coupling coil pair and a second coupling coil pair, the first coupling coil pair comprises a first coupling coil and a second coupling coil, the second coupling coil pair comprises a third coupling coil and a fourth coupling coil, the broadband balun comprises a third coupling coil pair, and the third coupling coil pair comprises a fifth coupling coil and a sixth coupling coil;
the first end of the second coupling coil and the first end of the third coupling coil are both connected to a first balanced signal port of the broadband balun impedance transformer, the second end of the second coupling coil is connected to a first input port of the broadband balun, and the second end of the third coupling coil is connected with the second end of the first coupling coil and grounded;
the first end of the first coupling coil and the first end of the third coupling coil are both connected to a second balanced signal port of the broadband balun impedance transformer, and the second end of the third coupling coil is connected to a second input port of the broadband balun;
the first end of the fifth coupling coil is connected to the second input port of the broadband balun, the second end of the fifth coupling coil is grounded, the first end of the sixth coupling coil is connected to the first input port of the broadband balun, and the second end of the sixth coupling coil is connected to the unbalanced port of the broadband balun impedance transformer.
2. A wideband balun impedance transformer as claimed in claim 1 further comprising a choke inductor and a decoupling capacitor, wherein the second end of the third coupling coil and the second end of the first coupling coil are connected to the feed port through the choke inductor and grounded through the decoupling capacitor.
3. A wideband balun impedance transformer according to claim 1, wherein the first dielectric layer group is stacked on the second dielectric layer group or the second dielectric layer group is stacked on the first dielectric layer group.
4. The wideband balun impedance transformer of claim 1, further comprising a high-resistance substrate on which the dielectric layer is disposed, the high-resistance substrate having a resistivity higher than 1000 ohm-cm.
5. A wideband balun impedance transformer comprising:
the broadband balun comprises a plurality of coupling coil pairs, and at least one coupling coil pair;
the broadband differential impedance converter comprises a first medium layer group and a second medium layer group which are internally and externally nested, wherein the first medium layer group and the second medium layer group respectively comprise a plurality of medium layers which are stacked up and down, metal routing layers and communication holes are arranged in the medium layers, two adjacent metal routing layers are connected through the communication holes, the medium layers in the first medium layer group are connected in pairs to form a coupling coil pair of the broadband differential impedance converter, and the medium layers in the second medium layer group are connected in pairs to form a coupling coil pair of the broadband balun;
the broadband differential impedance transformer comprises a first coupling coil pair and a second coupling coil pair, the first coupling coil pair comprises a first coupling coil and a second coupling coil, the second coupling coil pair comprises a third coupling coil and a fourth coupling coil, the broadband balun comprises a third coupling coil pair, and the third coupling coil pair comprises a fifth coupling coil and a sixth coupling coil;
the first end of the second coupling coil and the first end of the third coupling coil are both connected to a first balanced signal port of the broadband balun impedance transformer, the second end of the second coupling coil is connected to a first input port of the broadband balun, and the second end of the third coupling coil is connected with the second end of the first coupling coil and grounded;
the first end of the first coupling coil and the first end of the third coupling coil are both connected to a second balanced signal port of the broadband balun impedance transformer, and the second end of the third coupling coil is connected to a second input port of the broadband balun;
the first end of the fifth coupling coil is connected to the second input port of the broadband balun, the second end of the fifth coupling coil is grounded, the first end of the sixth coupling coil is connected to the first input port of the broadband balun, and the second end of the sixth coupling coil is connected to the unbalanced port of the broadband balun impedance transformer.
6. A wideband balun impedance transformer as claimed in claim 5 wherein said first dielectric layer set is nested within said second dielectric layer set such that said pair of coupling coils of said wideband differential impedance transformer encircle an inner winding and said pair of coupling coils of said wideband balun encircle an outer winding; or,
the second medium layer group is nested in the first medium layer group, so that the coupling coil pair of the broadband balun surrounds the inner ring, and the coupling coil pair of the broadband differential impedance converter surrounds the outer ring.
7. A wideband balun impedance converter as claimed in claim 5 further comprising a choke inductance and a decoupling capacitance, wherein the second end of said third coupling coil and the second end of said first coupling coil are connected to the feed port through said choke inductance and grounded through said decoupling capacitance.
8. An electronic product comprising a wideband balun impedance transformer as claimed in any one of claims 1 to 7.
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| US9276056B2 (en) * | 2010-05-27 | 2016-03-01 | Texas Instruments Incorporated | Baluns for RF signal conversion and impedance matching |
| CN107293393B (en) * | 2016-04-11 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | On-chip transformer balun |
| CN106253864A (en) * | 2016-08-11 | 2016-12-21 | 宜确半导体（苏州）有限公司 | A kind of radio-frequency power amplifier |
| CN106100602A (en) * | 2016-08-11 | 2016-11-09 | 宜确半导体（苏州）有限公司 | A kind of wideband balun impedance transformer |
| US10778176B2 (en) * | 2018-11-29 | 2020-09-15 | Raytheon Company | CMOS Guanella balun |
| WO2020133514A1 (en) * | 2018-12-29 | 2020-07-02 | 华为技术有限公司 | Multi-band radio frequency front-end device, multi-band receiver, and multi-band transmitter |
| CN111988015B (en) * | 2020-08-26 | 2024-05-24 | 宜确半导体（苏州）有限公司 | Balun impedance transformer, impedance matching device, radio frequency front-end circuit and terminal |
| CN114300439B (en) * | 2021-12-28 | 2022-10-11 | 宜确半导体（苏州）有限公司 | Balun integrated structure and product with same |
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