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CN115505932B - Tungsten chemical mechanical polishing solution and application thereof - Google Patents

Tungsten chemical mechanical polishing solution and application thereof Download PDF

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Publication number
CN115505932B
CN115505932B CN202211087131.9A CN202211087131A CN115505932B CN 115505932 B CN115505932 B CN 115505932B CN 202211087131 A CN202211087131 A CN 202211087131A CN 115505932 B CN115505932 B CN 115505932B
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chemical mechanical
mechanical polishing
tungsten chemical
aldehyde
tungsten
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CN115505932A (en
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王瑞芹
崔晓坤
卞鹏程
王庆伟
徐贺
李国庆
王永东
卫旻嵩
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Wanhua Chemical Group Electronic Materials Co ltd
Wanhua Chemical Group Co Ltd
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Wanhua Chemical Group Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention discloses a tungsten chemical mechanical polishing solution and application thereof, wherein the tungsten polishing solution comprises a silicon dioxide abrasive, an iron salt catalyst, an oxidant, a stabilizer, a rate inhibitor, an aldehyde compound and water. The rate inhibitor can generate Schiff base with aldehyde group compounds, and the sensitivity of Schiff base bonds to temperature is utilized to realize the adjustment of the unevenness of the polished surface and improve the quality of the polished surface.

Description

Tungsten chemical mechanical polishing solution and application thereof
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to a tungsten chemical mechanical polishing solution and application thereof.
Background
With the gradual decrease in the size of semiconductor devices and the increasing number of metal layers, the chemical mechanical polishing techniques of metal layers and insulating dielectric layers become particularly critical.
In Chemical Mechanical Polishing (CMP), the upper surface of a substrate is in direct contact with a polishing pad and is rotated relative to the polishing pad under pressure, while an abrasive-containing mixture (commonly referred to as a polishing liquid) is applied to the surface of the polishing pad, and planarization of the substrate surface is accomplished by chemical etching of the polishing liquid and mechanical action of the abrasive.
It is known that in the polishing process of metal layers, a metal oxide having a relatively small hardness is usually formed on the surface of the metal by an oxidizing agentChemical compound (MO) x ) The oxide layer is then mechanically removed by the abrasive action of the abrasive, producing a new metal surface that continues to be oxidized, and the process is repeated until polishing is complete.
Tungsten, which is one of the Chemical Mechanical Polishing (CMP) targets, has strong electromigration resistance at high current density, excellent hole filling capability, and can form good ohmic contact with silicon, so it can be used as a filling metal and diffusion barrier layer of contact windows and vias.
The existing chemical mechanical polishing method of tungsten mainly comprises the steps of oxidizing the surface of tungsten metal through Fenton reaction, as shown in formulas (1), (2) and (3), and removing a soft oxide film through mechanical grinding.
H 2 O 2 +Fe 3+ ＝Fe 2+ +O 2 +2H + (1)
Fe 3+ +H 2 O 2 ＝Fe 2+ +OH - +OH· (2)
6OH·+W+6H + ＝3H 2 O+WO 3 (3)
The Fenton reaction is very severe, so that the polishing disc and the polished wafer can generate obvious temperature rise, and the temperature can be raised to 50-70 ℃ within the polishing time of 60s. In actual polishing, the temperature of the edge portion of the wafer is low because the continuous supply of the polishing liquid has a cooling effect while playing a role in polishing, and the closer to the center of the wafer, the higher the temperature of the wafer is than the edge because the generated heat is hardly taken away by the new polishing liquid, and therefore, a large temperature difference is generated between the center and the edge of the wafer. It is known that the Fenton reaction is faster at high temperature, which results in a tendency that the polishing rate often shows a fast center and a slow edge in metal polishing, so that the polished surface is very uneven and NU (non-uniformity) is very large.
U.S. Pat. nos. 10676647, 9631122 and 9238754 utilize amino acids, cationic ammonium isovelocity inhibitors to reduce static corrosion of the tungsten sheet being polished, but the polishing rates are very low and difficult to apply to bulk removal of tungsten material. The rate inhibitors were also investigated in U.S. Pat. nos. 6083419 and 9771496, but do not mention polishing rates and surface irregularities. The use of polyamino acid as a rate inhibitor in U.S. Pat. No. 3,182,62 allows higher polishing rates (3000A/min) and very low static etch to be achieved, but is equally not studied for NU, and at the same time, the addition of polyamino acid is only 25ppm, which is known to result in uneven distribution of the adjuvant on the surface being polished, resulting in poor surface quality, and even more so, the polymers used in the patent.
Therefore, a new tungsten chemical mechanical polishing solution is needed, which can automatically adjust the polishing rate according to the temperature of the polishing disc/the polishing surface while having a higher polishing rate, and improve the difference between the polishing rates at the edge and the center, thereby realizing the flat polishing of the wafer and improving the surface quality.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a novel tungsten chemical mechanical polishing solution which can reduce the difference between the edge and the center speed of the surface to be polished and realize the smooth polishing of a wafer, thereby greatly improving the surface quality.
It is another object of the present invention to provide the use of such a tungsten chemical mechanical polishing solution in tungsten chemical mechanical polishing.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
a tungsten chemical mechanical polishing solution comprises a silicon dioxide abrasive, an iron salt catalyst, an oxidant, a stabilizer, a rate inhibitor, an aldehyde compound and water; wherein the rate inhibitor is a small molecule nitrogen-containing compound containing a primary amine group; preferably, the rate inhibitor is at least any one of an α -amino acid other than proline, a nitrogen-containing heterocycle having a primary amine group, an aliphatic or aromatic primary amine.
In a preferred embodiment, the tungsten chemical mechanical polishing liquid comprises, in mass percent, 1 to 10% of a silica abrasive, 0.001 to 0.1% of an iron salt catalyst, 1.5 to 2.5% of an oxidizing agent, 0.01 to 0.2% of a stabilizer, 0.005 to 0.2% of a rate inhibitor, 0.0001 to 0.1% of an aldehyde compound, and the balance water.
In a preferred embodiment, the tungsten chemical mechanical polishing liquid comprises, in mass percent, 1 to 5% of a silica abrasive, 0.01 to 0.1% of an iron salt catalyst, 2.0% of an oxidizing agent, 0.05 to 0.2% of a stabilizer, 0.01 to 0.2% of a rate inhibitor, 0.005 to 0.1% of an aldehyde compound, and the balance water.
In a specific embodiment, the rate inhibitor is an α -amino acid other than proline, preferably the α -amino acid is selected from one or more of glycine, alanine, glutamic acid, leucine, tyrosine, serine, histidine, valine, lysine or arginine, more preferably the α -amino acid is selected from one or both of glycine and lysine.
In a specific embodiment, the rate inhibitor is a nitrogen-containing heterocycle having a primary amine group, preferably the rate inhibitor is selected from one or more of 3-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-amino-1H-tetrazole, 2-aminomethylpyridine, 4-aminopyridine, 2-aminopyrimidine, adenine or N-aminoethylpiperazine.
In a specific embodiment, the rate inhibitor is an aliphatic or aromatic primary amine, preferably the rate inhibitor is selected from one or more of diethylenetriamine, tetraethylenepentamine, pentaethylenehexamine, octylamine, dodecylamine, ethylenediamine or aniline.
In a specific embodiment, the aldehyde-based compound is not limited in any way, and may be a small molecule aldehyde or a large molecule aldehyde, and the molecular weight of the small molecule aldehyde is less than 2000 daltons, for example, preferably any one selected from octanal, laural, myristyl aldehyde, nonadienal, methylparaben aldehyde, vanillin, pyridoxal, mugwort aldehyde, citral, and the like; the macromolecular aldehydes have a molecular weight above 2000 daltons, for example polymers preferably selected from unsaturated aldehydes such as polycycloaldehyde, polynonadienal, dextran oxide and the like. Preferably, formaldehyde, glyoxal and other aldehydes with higher biotoxicity are not selected as the aldehyde.
Primary amine groups of the rate inhibitor and aldehyde groups of the aldehyde compound may react with a schiff base as shown in formula (4) to form a schiff base bond c=n. The reaction is a reversible reaction, the reaction balance is very sensitive to temperature, at low temperature, the reaction balance moves rightwards, more rate inhibitor and aldehyde form Schiff base, the rate inhibition activity is greatly reduced, and the polishing rate is kept at a higher level; when the temperature is increased, the reaction balance moves leftwards, the speed inhibitor is released, the inhibition efficiency on the polishing speed can be improved, the speed difference caused by the temperature difference is reduced, and the polishing flatness is improved.
In a specific embodiment, the silica abrasive is a silica sol or fumed silica, preferably the silica abrasive is a silica sol.
In a specific embodiment, the ferric salt catalyst is ferric salt capable of ionizing ferric ions in aqueous solution, and anions of the ferric salt are not limited, and can be organic anions such as citrate, oxalate, gluconate, phthalate and the like, and inorganic anions such as nitrate, sulfate and the like; the iron salt is preferably ferric nitrate.
In a specific embodiment, the stabilizer is an organic acid, preferably, the organic acid is selected from one or more of oxalic acid, malonic acid, succinic acid, citric acid, tartaric acid, and more preferably malonic acid.
In a specific embodiment, the oxidizing agent is hydrogen peroxide; preferably, the pH of the tungsten chemical mechanical polishing solution is 2.0-2.5.
In another aspect of the present invention, the use of the aforementioned tungsten chemical mechanical polishing solution in tungsten chemical mechanical polishing.
By adopting the technical scheme, the invention has the following beneficial effects:
1) The dynamic bond characteristic of the Schiff base bond is utilized, so that the activity of the speed inhibitor can be regulated by temperature, and the polishing speed difference caused by the temperature difference between the center and the edge of a polished wafer is reduced, thereby improving the surface flatness and uniformity after polishing;
2) The high-temperature rate inhibitor has stronger activity, inhibits the severe static corrosion of tungsten at high temperature and improves the surface quality of the polished wafer.
3) The polishing rate is fast enough when the two points are realized, and the requirement of removing a large amount of tungsten material can be met.
Detailed Description
The following examples will further illustrate the method provided by the present invention for a better understanding of the technical solution of the present invention, but the present invention is not limited to the examples listed but should also include any other known modifications within the scope of the claims of the present invention.
A tungsten chemical mechanical polishing solution comprises 1-10% by mass of silicon dioxide abrasive, 0.001-0.1% by mass of ferric salt catalyst, 2.0% by mass of oxidant, 0.01-0.2% by mass of stabilizer, 0.005-0.2% by mass of rate inhibitor, 0.001-0.1% by mass of aldehyde compound and the balance of water; wherein the rate inhibitor is a small molecule nitrogen-containing compound containing a primary amine group. Preferably, the tungsten chemical mechanical polishing solution comprises 1-5% of silicon dioxide abrasive, 0.01-0.1% of ferric salt catalyst, 2.0% of oxidant, 0.05-0.2% of stabilizer, 0.01-0.2% of rate inhibitor, 0.005-0.1% of aldehyde compound and the balance of water.
In particular, the rate inhibitor is an alpha-amino acid other than proline, a nitrogen-containing heterocycle having a primary amine group, or an aliphatic or aromatic primary amine. The α -amino acid is, for example, one or more selected from glycine, alanine, glutamic acid, leucine, tyrosine, serine, histidine, valine, lysine or arginine, but is not limited thereto, and more preferably, the α -amino acid is one or more selected from glycine or lysine. The nitrogen-containing heterocycle having a primary amine group is, for example, one or more selected from 3-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-amino-1H-tetrazole, 2-aminomethylpyridine, 4-aminopyridine, 2-aminopyrimidine, adenine or N-aminoethylpiperazine, but is not limited thereto. The aliphatic or aromatic primary amine is, for example, one or more selected from diethylenetriamine, tetraethylenepentamine, pentaethylenehexamine, octylamine, dodecylamine, ethylenediamine or aniline, but is not limited thereto.
Specifically, the aldehyde-based compound is not limited in any way, as long as it is a compound containing an aldehyde group, and may be a small molecule aldehyde or a large molecule aldehyde, the molecular weight of the small molecule aldehyde being 2000 daltons or less, for example, selected from octanal, laural, myristyl aldehyde, nonadienal, methylparaben aldehyde, vanillin, pyridoxal, mugwort aldehyde, citral, and the like, but is not limited thereto; the molecular weight of the macroaldehyde is 2000 daltons or more, for example, a polymer selected from unsaturated aldehydes such as polycycloaldehyde, polynonadienal, oxidized dextran, etc., but is not limited thereto. Preferably, the aldehyde-based compound does not use aldehyde with high biotoxicity such as formaldehyde, glyoxal, etc., but it should be noted that aldehyde with high biotoxicity such as formaldehyde, glyoxal, etc. can also be used in the present invention, but is not preferable because of its biotoxicity.
The rate inhibitor is present in an amount of 0.005-0.2%, including for example but not limited to 0.005%, 0.01%, 0.03%, 0.05%, 0.07%, 0.1%, 0.15%, 0.2%, preferably 0.01-0.2%; the aldehyde-based compound is present in an amount of 0.001 to 0.1%, including, for example, but not limited to, 0.001%, 0.003%, 0.005%, 0.007%, 0.01%, preferably 0.005 to 0.1%.
The silica abrasive is silica sol or fumed silica, preferably silica sol, and is added in an amount generally ranging from 1 to 10% of the total mass of the polishing liquid, including, but not limited to, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, preferably 1 to 5% of the total mass of the polishing liquid.
The silica sol has a particle size of 40-200nm, preferably 60-120nm, and may be any satisfactory silica sol, such as those commercially available from Nissan Chemical, fuso, dupont, bayer, etc., preferably selected from the group consisting of PL-3, PL-5, and PL-7 (particle sizes 70, 100, and 120nm, respectively).
The iron salt catalyst is generally added in an amount of 0.001% to 0.1% by weight of the total polishing slurry, including, for example, but not limited to, 0.001%, 0.005%, 0.01%, 0.05%, 0.07%, 0.1%, preferably, the iron salt catalyst is added in an amount of 0.01% to 0.1% by weight of the total polishing slurry.
The oxidant is typically hydrogen peroxide, typically added in an amount of 2.0%, and is typically added separately prior to use to avoid premature decomposition. Wherein the pH value of the tungsten chemical mechanical polishing solution is regulated to 2.0-2.5 by nitric acid or potassium hydroxide.
The invention is further illustrated, but not limited, by the following more specific examples.
Table 1 shows the components and contents of the tungsten polishing solutions of comparative examples 1 to 3 and examples 1 to 12 according to Table 1, the chemical mechanical polishing solutions were prepared by simple stirring and mixing, the pH value was adjusted to 2.0 to 2.5 with nitric acid or KOH after uniform mixing, hydrogen peroxide was added before use, the mixture was uniform, and the balance was made up with water, to obtain each example and comparative example of the present invention.
Table 1 polishing liquid composition tables of comparative examples 1 to 3 and examples 1 to 12
To verify the polishing effect of the polishing solutions of the present invention, the polishing solutions of comparative examples 1 to 3 and examples 1 to 12 were polished.
The polishing conditions were as follows: the polishing machine table is a Mirra polishing machine, the polishing pad is an IC1010, the polishing pressure is 4.2psi, the rotation speed of the polishing head and the polishing disk is 93/87rpm, the flow rate of the polishing liquid is 100mL/min, and the polishing time is 60s.
The conductivity of the tungsten Wafer is tested by a four-probe conductivity meter before and after polishing, a 'Half-Wafer Mapping' mode is selected, 49 points on the Wafer X axis are measured, and therefore the thickness of the tungsten Wafer before and after polishing is calculated, and the tungsten polishing rate is obtained by dividing the difference of the thickness of the tungsten Wafer before and after polishing by the polishing time. The non-uniformity (NU) of the polished tungsten wafer is calculated by equation (5), wherein σ MRR Is the standard of polishing rateDeviation, MRR is the average value of 49 point polishing rates. The maximum difference in polishing rate at 49 points was calculated and designated Range. The roughness of the surface of the polished tungsten WAFER was measured by a Park NX-WAFER atomic force microscope in a range of 10X 10 μm, and the final result was obtained by taking the average of three tests of center, middle and edge. The results are shown in Table 2.
NU＝σ MRR /MRR (5)
Table 2 polishing effects of comparative examples 1 to 3 and examples 1 to 12
Polishing liquid MRR(A/min) NU(％) Range(A) Roughness (nm)
Comparative example 1 1012 5.89 679 2.37
Comparative example 2 997 6.02 556 2.06
Comparative example 3 6218 12.63 1897 7.49
Example 1 3521 2.75 358 1.083
Example 2 3587 2.53 319 0.861
Example 3 3614 2.66 291 1.113
Example 4 3698 3.25 399 10.88
Example 5 3634 3.65 260 1.182
Example 6 3640 2.62 267 0.891
Example 7 3590 2.86 258 0.970
Example 8 3634 3.27 392 0.908
Example 9 3554 3.39 287 0.944
Example 10 3604 3.37 260 0.957
Example 11 3675 3.19 257 0.842
Example 12 3597 2.87 276 0.954
As shown in Table 2, comparative example 3, in which no rate-suppressing agent was added, resulted in uncontrollable polishing rates, very fast average MRR, but very poor NU and roughness, and the Range of polishing rates was also the largest, indicating that the rates of the polished tungsten wafers were very different at different locations. The polishing performance of comparative examples 1 and 2 was much better than that of comparative example 3 because the rate inhibitor reduced the polishing rate while still reducing static corrosion and improving surface quality, but Range and roughness were still at higher levels, and the polishing rate was too low to meet the bulk tungsten polishing requirements due to the very high rate inhibitor activity. When the aldehyde-based compound was added on the basis of the rate inhibitor, as in examples 1 to 12, the activity of a part of the rate inhibitor was inhibited during polishing, and the average polishing rate was increased. Meanwhile, due to the temperature sensitivity of the Schiff base bond formed by the speed inhibitor and the aldehyde compound, the Range is greatly reduced, which proves that the polishing speeds of different areas of the tungsten wafer are nearly consistent, thereby leading to the synchronous reduction of NU and roughness and leading the polishing performance to reach excellent standards.
In summary, when the tungsten polishing solution is applied to the chemical mechanical polishing of a tungsten-containing wafer, the tungsten polishing solution has the advantages of controllable polishing rate, high polishing flatness and small surface roughness, and enables the tungsten wafer to have good surface quality after polishing.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Those skilled in the art will appreciate that certain modifications and adaptations of the invention are possible and can be made under the teaching of the present specification. Such modifications and adaptations are intended to be within the scope of the present invention as defined in the appended claims.

Claims (18)

1. The tungsten chemical mechanical polishing solution is characterized by comprising 1-10% of silicon dioxide abrasive, 0.001-0.1% of ferric salt catalyst, 1.5-2.5% of oxidant, 0.01-0.2% of stabilizer, 0.005-0.2% of speed inhibitor, 0.001-0.1% of aldehyde compound and the balance of water in percentage by mass; the rate inhibitor is at least any one of an alpha-amino acid other than proline, a nitrogen-containing heterocycle having a primary amine group, an aliphatic or aromatic primary amine.
2. The tungsten chemical mechanical polishing liquid according to claim 1, wherein the tungsten chemical mechanical polishing liquid comprises, in mass percent, 1-5% of a silica abrasive, 0.01-0.1% of an iron salt catalyst, 2.0% of an oxidizing agent, 0.05-0.2% of a stabilizer, 0.01-0.2% of a rate inhibitor, 0.005-0.1% of an aldehyde compound, and the balance being water.
3. The tungsten chemical mechanical polishing solution according to claim 1, wherein the α -amino acid is one or more selected from glycine, alanine, glutamic acid, leucine, tyrosine, serine, histidine, valine, lysine and arginine.
4. A tungsten chemical mechanical polishing solution according to claim 3, wherein the α -amino acid is one or both of glycine and lysine.
5. The tungsten chemical mechanical polishing liquid according to claim 1, wherein the nitrogen-containing heterocycle having a primary amine group is selected from one or more of 3-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-amino-1H-tetrazole, 2-aminomethylpyridine, 4-aminopyridine, 2-aminopyrimidine, adenine and N-aminoethylpiperazine.
6. The tungsten chemical mechanical polishing liquid according to claim 1, wherein the aliphatic or aromatic primary amine is one or more selected from diethylenetriamine, tetraethylenepentamine, pentaethylenehexamine, octylamine, dodecylamine, ethylenediamine and aniline.
7. The tungsten chemical mechanical polishing liquid according to claim 1 or 2, wherein the aldehyde group compound is a small molecular aldehyde having a molecular weight of 2000 daltons or less or a large molecular aldehyde having a molecular weight of 2000 daltons or more.
8. The tungsten chemical mechanical polishing liquid according to claim 7, wherein the small molecule aldehyde is selected from any one of octanal, laural, myristal, nonenal, methyl orange aldehyde, vanillin, pyridoxal, mugwort aldehyde, citral; the macromolecular aldehyde is selected from polymers of unsaturated aldehydes.
9. The tungsten chemical mechanical polishing solution according to claim 8, wherein the macromolecular aldehyde is selected from any one of polycycloaldehyde, polynonadienal, and oxidized dextran.
10. The tungsten chemical mechanical polishing liquid according to claim 1 or 2, wherein the silica abrasive is silica sol or fumed silica.
11. A tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the oxidizing agent is hydrogen peroxide.
12. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the iron salt catalyst is an iron salt capable of ionizing iron ions in an aqueous solution.
13. The tungsten chemical mechanical polishing solution according to claim 12, wherein the iron salt catalyst is ferric nitrate.
14. The tungsten chemical mechanical polishing liquid according to claim 1 or 2, wherein the stabilizer is an organic acid.
15. The tungsten chemical mechanical polishing solution according to claim 14, wherein the stabilizer is one or more selected from oxalic acid, malonic acid, succinic acid, citric acid and tartaric acid.
16. The tungsten chemical mechanical polishing slurry according to claim 15, wherein the stabilizer is malonic acid.
17. The tungsten chemical mechanical polishing liquid according to claim 1 or 2, wherein the pH of the tungsten chemical mechanical polishing liquid is 2.0 to 2.5.
18. Use of the tungsten chemical mechanical polishing solution according to any one of claims 1 to 17 in tungsten chemical mechanical polishing.
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