CN115498785A - Collector of radio frequency energy, collector module and power supply circuit - Google Patents
Collector of radio frequency energy, collector module and power supply circuit Download PDFInfo
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- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/20—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves
- H02J50/27—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves characterised by the type of receiving antennas, e.g. rectennas
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Abstract
The invention relates to the technical field of energy collection, in particular to a radio frequency energy collector which at least comprises a radio frequency energy receiver and a radio frequency energy converter. The radio frequency energy converter comprises a radio frequency energy conversion unit, and the radio frequency energy conversion unit comprises a magnetic spin valve and a semiconductor Hall strip. The semiconductor Hall strip comprises a Hall strip main body, a first Hall voltage pin and a second Hall voltage pin, wherein the first Hall voltage pin and the second Hall voltage pin are positioned on two sides of the Hall strip main body, the magnetic spin valve generates a vertical magnetic field which oscillates along with time at the position of the semiconductor Hall strip, the semiconductor Hall strip generates direct current voltage by combining with radio frequency current flowing in the semiconductor Hall strip, and the direct current voltage is led out through the first Hall voltage pin and the second Hall voltage pin. Meanwhile, the invention also provides a radio frequency energy collector module and a power supply circuit utilizing the radio frequency energy. The invention can realize energy conversion with high efficiency for weak radio frequency energy input, and greatly improves the collection and utilization capacity of the radio frequency energy in the environment.
Description
Technical Field
The invention relates to the technical field of energy collection, in particular to a collector of radio frequency energy, a collector module and a power supply circuit.
Background
Today's science and technology is continuously developing towards intelligent interconnection. A large number of sensors, intelligent terminals, edge devices and wearable equipment are deployed in different application scenes and are connected with one another through communication networks to acquire, calculate, transmit and store data information. Due to the limitations of deployment environment and cost, many of the above intelligent devices or circuits cannot be powered by an external power source. It is common practice to power these smart devices or circuits with a battery. However, since the capacity of the battery is limited, the battery needs to be replaced periodically, which adversely affects the operational reliability and maintenance cost of the smart device or circuit.
The energy harvesting technology is to collect the unused energy existing in the environment, convert it into electric energy, and supply power to the intelligent device or circuit. Common forms of energy that can be utilized include solar energy, wind energy, thermal energy, mechanical energy, energy from radio frequency signals, and the like. With the rapid development of wireless networks in recent years, there are a great many radio frequency signals available for energy harvesting in the environment. Compared with other forms of energy sources, the radio frequency energy has the advantages of no influence of natural environment, no influence of motion states of devices or devices, 24-hour uninterrupted energy source and the like. Through an energy acquisition technology, the radio frequency energy existing in the environment is utilized to supply power to the intelligent device or the circuit, so that the working reliability and the maintenance cost of the intelligent device or the circuit can be effectively improved.
Schottky diodes are a widely used radio frequency energy harvesting device. An ideal schottky diode can be regarded as a unidirectional switch that allows only forward voltage to pass, thereby converting rf energy into dc energy by means of half-wave rectification. However, the schottky diode has good conversion efficiency only when the power of the input rf signal is high, and a large amount of rf signals existing in the environment tend to be weak in power, which is in the order of 1uW or less. In this case, the energy conversion efficiency of the schottky diode is low, and energy cannot be efficiently collected.
Methods for harvesting radio frequency energy using spintronic devices have gained considerable attention in recent years. For example, chinese patent CN108242858A, "a novel radio frequency microwave energy harvesting device based on electron spin properties", provides a radio frequency microwave energy harvesting device based on a spintronic device, which includes at least one radio frequency microwave energy conversion component, where the radio frequency microwave energy conversion component includes a first magnetic layer, a non-magnetic spatial layer, and a magnetic energy conversion layer, and converts a radio frequency signal into a direct current electrical signal by using a giant magnetoresistance effect (when the spatial layer is a metal material) or a tunneling magnetoresistance effect (when the spatial layer is an insulating material).
However, the dc voltage signal generated by the energy conversion device based on the giant magnetoresistance effect is usually small in amplitude, and is in the order of microvolts. The resistance value of the energy conversion device based on the tunneling magnetoresistance effect is high, and when the power of an input microwave signal is 1uW or lower, the energy conversion efficiency is low.
From the above, a new radio frequency energy collector, collector module or power supply circuit is needed to efficiently collect weak radio frequency energy existing in the environment.
Disclosure of Invention
In order to solve the above problems, the present invention mainly aims to provide a collector, a collector module and a power supply circuit capable of effectively collecting weak radio frequency energy in an environment, and provide a power supply mode with high efficiency, reliability, convenience, rapidness and low cost for an integrated circuit and a sensor applied to the scenes of internet of things, sensors, wearable devices, etc.
In order to realize the purpose, the invention adopts the technical scheme that:
in a first aspect, the present invention provides a radio frequency energy harvester, at least comprising a radio frequency energy receiver and a radio frequency energy converter;
the radio frequency energy receiver receives radio frequency energy existing in the environment and transmits the received radio frequency energy to the radio frequency energy converter;
the radio frequency energy converter comprises a radio frequency energy conversion unit, the radio frequency energy conversion unit comprises a magnetic spin valve and a semiconductor Hall strip, the magnetic spin valve comprises a vertically magnetized magnetic fixed layer, a vertically magnetized magnetic free layer and a non-magnetic separation layer between the magnetic fixed layer and the magnetic free layer, and the semiconductor Hall strip comprises a Hall strip main body and a first Hall voltage pin and a second Hall voltage pin which are positioned on two sides of the Hall strip main body;
after receiving radio frequency energy, a first radio frequency current and a second radio frequency current which correspond to the magnetic spin valve and the semiconductor Hall bar respectively pass through the magnetic spin valve and the semiconductor Hall bar; the magnetic spin valve is characterized in that a first radio-frequency current flowing in the magnetic spin valve generates a spin torque changing along with time to cause the magnetization direction of a magnetic free layer with superparamagnetism to change along with time oscillation, so that a vertical magnetic field changing along with time oscillation is generated at a semiconductor Hall strip, and under the combined action of the oscillation changing magnetic field and a second radio-frequency current flowing in the semiconductor Hall strip, the semiconductor Hall strip generates a direct-current voltage which is led out through a first Hall voltage pin and a second Hall voltage pin.
Further, the material of the nonmagnetic spacer layer is a metal material including one or more of Cu, au, ag, cr, mo, W, al, and Mg, and the thickness of the nonmagnetic spacer layer is 2 to 10nm.
Further, the material of the non-magnetic separation layer is an insulating material comprising MgO and Al 2 O 3 ，MgAl 2 O 4 ，HfO 2 ZrO, znO, the thickness of the nonmagnetic spacer layer being 0.3-1nm.
Further, the material of the semiconductor Hall strip comprises one or more of Si, ge, siGe, gaAs, inAs, inSb, alGaAs, inGaAs and InGaSb, and the carrier concentration of the semiconductor Hall strip is 10 15 -10 19 cm -3 The thickness is 5-200nm.
Furthermore, a medium separation layer is arranged between the magnetic spin valve and the semiconductor Hall strip, and the material of the medium separation layer comprises one or more of SiOx, siNx, siOxNy, alNx, alOx and MgO.
Further, the rf energy converter includes a plurality of rf energy converting units connected in series for increasing the amplitude of the output dc voltage.
Furthermore, the radio frequency energy converter comprises a plurality of radio frequency energy conversion unit groups, and any radio frequency energy conversion unit group comprises a plurality of radio frequency energy conversion units which are connected in series; for the frequency interval of the radio frequency signals, all the radio frequency energy conversion unit groups are connected in parallel, the impedance of the radio frequency energy converter is reduced, and the impedance is matched with the impedance of the radio frequency energy receiver; for the frequency interval of the direct current signal, the radio frequency energy conversion unit groups are connected in series, so that the amplitude of the output direct current voltage is improved.
Further, the radio frequency energy harvester is prepared on a flexible material substrate, and the flexible material comprises one or more of polyimide, polyethylene, polydimethylsiloxane, polyethylene terephthalate and polyurethane.
In a second aspect, the invention provides a radio frequency energy harvester module, which comprises a plurality of radio frequency energy harvesters, wherein the radio frequency energy harvesters are connected in series to increase the amplitude of the output direct current voltage.
In a third aspect, the present invention provides a circuit for supplying power by using radio frequency energy in an environment, including the above radio frequency energy collector or radio frequency energy collector module, and a working circuit, where the radio frequency energy collector or radio frequency energy collector module is configured to convert radio frequency energy in the environment into a direct current voltage to supply power to the working circuit.
Furthermore, the circuit for supplying power by using the radio frequency energy in the environment further comprises a battery circuit, the battery circuit supplies power to the working circuit, and the radio frequency energy collector or the radio frequency energy collector module converts the radio frequency energy in the environment into direct current voltage and charges the battery circuit, so that the working circuit can work for a long time without replacement.
The invention has the beneficial effects that: the collector overcomes the defects that the energy collection efficiency is low and the generated direct current signal is weak under the condition that the input radio frequency energy is 1uW or lower in the existing energy collection technology through a magnetic spin valve and a semiconductor Hall strip which are combined and configured, can still efficiently realize energy conversion even for the weak input radio frequency energy, and greatly improves the collection and utilization capacity of the radio frequency energy in the environment. The technology disclosed by the invention provides a high-efficiency, reliable, convenient and quick and low-cost power supply mode for the integrated circuit and the sensor applied to scenes such as the Internet of things, the sensor and wearable equipment, improves the working reliability of the integrated circuit and the sensor, and reduces the maintenance cost.
Drawings
FIG. 1 (a) is a schematic diagram of a radio frequency energy harvester of the present invention;
FIG. 1 (b) is a schematic diagram of an RF energy conversion unit according to the present invention;
FIG. 2 (a) is a schematic diagram of a second RF current circulating in a semiconductor Hall bar as a function of time;
FIG. 2 (b) is a schematic diagram of the change in the magnetic field of the magnetic free layer with time;
FIG. 2 (c) is a schematic diagram of the DC voltage output by the RF energy converting unit as a function of time;
FIG. 2 (d) is a schematic diagram of the DC voltage output by the voltage regulator circuit as a function of time;
FIG. 3 is a schematic diagram of an RF energy converter according to the present invention;
FIG. 4 is a schematic diagram of another RF energy converter of the present invention;
FIG. 5 is a schematic view of another RF energy harvester of the present invention;
FIG. 6 is a schematic diagram of an RF energy harvester module of the present invention;
FIG. 7 is a schematic diagram of a circuit for powering RF energy in an environment in accordance with the present invention;
fig. 8 is a schematic diagram of another circuit for powering with rf energy in the environment of the present invention.
Wherein, the reference numbers in fig. 1 to 8 are:
1-a radio frequency energy harvester; 1' -a radio frequency energy harvester module; 2-a battery circuit; 3-a working circuit; 4-a radio frequency energy supply circuit; 10-a radio frequency energy receiver; 20-a radio frequency energy converter; 30-a voltage stabilizing circuit; 210-a radio frequency energy conversion unit; 210a-210i: a radio frequency energy conversion unit; 211a-211b: an inductance; 212a-212f: a capacitor; 2110-magnetic spin valve; 21101-magnetic pinned layer; 21102-non-magnetic spacer layer; 21103-magnetic free layer; 21104-first radio frequency current; 2120-semiconductor hall bar; 21201-hall bar body; 21202-a first hall voltage pin; 21203-a second hall voltage pin; 21204-second radio frequency current; 2130-isolating dielectric layer.
Detailed Description
To clearly illustrate the objects, technical solutions and advantages of the present invention, the technical solutions of the present invention will be described in detail and completely by embodiments with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
fig. 1 (a) shows one of the implementation methods of the radio frequency energy harvester of the present invention, the radio frequency energy harvester 1 includes: a radio frequency energy receiver 10, a radio frequency energy converter 20. The rf energy receiver 10 receives rf energy present in the environment and transfers the received rf energy to the rf energy converter 20. The impedances of the rf energy receiver 10 and the rf energy converter 20 are matched to reduce the reflection of the rf signal, thereby transferring the rf energy with maximum efficiency.
The rf energy converter 20 includes an rf energy converting unit 210. As shown in fig. 1 (b), the rf energy conversion unit 210 includes a magnetic spin valve 2110 and a semiconductor hall bar 2120. Under the action of the received radio frequency energy, a first radio frequency current 21104 flows through the magnetic spin valve 2110, and a second radio frequency current 21204 flows through the semiconductor hall bar 2120; the frequencies of the first rf current 21104 and the second rf current 21204 are the same as the frequency of the received rf signal.
The magnetic spin valve 2110 is composed of a perpendicularly magnetized magnetic pinned layer 21101, a perpendicularly magnetized magnetic free layer 21103, and a nonmagnetic spacer layer 21102 between the magnetic pinned layer 21101 and the magnetic free layer 21103. The magnetization direction of the magnetic pinned layer 21101 remains unchanged, and the magnetic free layer 21103 has superparamagnetism. A first radio frequency current 21104 flowing in the magnetic spin valve 2110 generates a spin torque varying with time, causing the magnetization direction of the superparamagnetic magnetic free layer 21103 to oscillate and change with time, thereby generating an oscillating and varying magnetic field with time.
The semiconductor hall bar 2120 includes a hall bar body 2120, and a first hall voltage pin 2120 and a second hall voltage pin 21203 which are located on two sides of the hall bar body 2120. The magnetic field generated by the magnetic free layer 21103 is applied to the semiconductor hall bar 2120. Under the action of the magnetic field, when a current 21204 passes through the semiconductor hall bar 2120, a dc voltage is generated at two sides of the semiconductor hall bar 2120, and the dc voltage can be derived through the first hall voltage pin 2120 and the second hall voltage pin 21203.
As shown in fig. 2 (a), a second rf current 21204 (i.e. current 21204 flowing through the semiconductor hall bar 2120i RF ) Over time (t) Alternatively, it can be described by the following formula:
i
RF
(t) = I
0
sin(2
ft)
whereinI 0 Andfthe amplitude and frequency of the second rf current 21204, respectively.
When the magnitude of a first RF current 21104 flowing in the magnetic spin valve 2110 exceeds the threshold current of the magnetic free layer 21103The magnetization direction of the magnetic free layer 21103 is driven by the first rf current 21104 to oscillate. For the superparamagnetic magnetic free layer 21103, the threshold current required to drive the magnetization direction thereof to oscillate is also small because its switching energy barrier is low. The threshold current (I C ) It can be calculated according to the following formula:
whereineIs the basic charge capacity of the battery,αis the damping coefficient of the magnetic free layer 21103, k B is the boltzmann constant of the signal,ηis the equivalent spin polarizability of the radio frequency current in a magnetic spin valve,
is the approximate plank constant of the sample,Tis the temperature. According to the followingαAnd is about 0.01 of the total weight of the alloy,ηthe value range is about 0.1-0.8,T=300Kthe estimation is carried out in such a way that,I C the value range of (A) is about 0.5-3.8uA.
Assuming that the received rf energy is 1uW, the equivalent impedance of the rf energy converter is 50 Ω, and the calculated amplitude of the first rf current 21104 is about 200uA, which is much larger than the threshold current corresponding to the magnetic free layer 21103. The magnetization direction of the magnetic free layer 21103 can therefore oscillate at the same frequency as the first rf current 21104, as shown in fig. 2 (b).
The lateral hall voltage (generated in the semiconductor hall bar 2120)V H ) And a perpendicular magnetic field generated by the magnetic free layer 21103: (B) And the second rf current 21204 in the semiconductor hall bar 2120, which can be described by the following equation:
V H = i RF (t)B(t)/(nqd) = I 0 sin(2 
ft)·B 0 sin(2 
ft+φ)/(nqd)
whereinB 0 Andφrespectively the magnitude and phase of the magnetic field generated by the magnetic free layer 21103,n、qanddthe carrier concentration, the carrier electric quantity and the thickness of the semiconductor hall bar 2120 are respectively.
Since the magnetic field generated by the free magnetic layer 21103 has the same frequency and fixed phase difference as the second RF current 21204, the product of the two will generate a DC Hall voltage: (V H，DC ) Described by the following formula:
V H，DC = I 0 B 0 cosφ/(2nqd)
suppose thatI 0 = 200uA，B 0 = 1T，n = 10 17 cm -3 ，φ = 0，q = 1.6×10 -19 C，d= 50nm, the calculated dc hall voltage is about 125mV, and the dc voltage conversion efficiency of the rf energy converter 20 is significantly better than that of an energy harvesting device based on the magnetoresistance effect.
As shown in fig. 2 (c), the dc hall voltage may be used as an output voltage to power an external device or circuit.
As shown in fig. 1 (b), the magnetic spin valve 2110 and the semiconductor hall bars 2120 are separated by a dielectric spacer layer 2130, and the material of the dielectric spacer layer 2130 includes, but is not limited to, one or more of SiOx, siNx, siOxNy, alN, alOx, and MgO. The magnetic spin valve 2110 and the semiconductor hall bar 2120 may also be in direct contact without the use of the dielectric spacer layer 2130, depending on the requirements of the actual application.
The magnetic pinned layer 21101 and the magnetic free layer 21103 shown in fig. 1 (b) are located at the top and bottom of the magnetic spin valve 2110, respectively. The positions of the magnetic pinned layer 21101 and the magnetic free layer 21103 can also be changed according to the requirements of the practical application, and are respectively positioned at the bottom and the top of the magnetic spin valve 2110.
It should be noted that the material of the semiconductor hall bar 2120 may include, but is not limited to, one or more of Si, ge, siGe, gaAs, inAs, inSb, alGaAs, inGaAs, inGaSb, and has a carrier concentration of 10 15 -10 19 cm -3 The thickness is 5-200nm.
Because the semiconductor hall bar 2120 is independent of the magnetic spin valve 2110, the generated direct current hall voltage is not directly influenced by the resistance value and the magnetic resistance effect of the magnetic spin valve 2110, the characteristics of the semiconductor hall bar 2120 can be optimized independently according to application requirements, and the radio frequency energy conversion efficiency is improved.
Example 2:
one of the implementation methods of the radio frequency energy collector in the present invention is similar to that in embodiment 1 in the main technical solution of this embodiment, and features that are not explained in this embodiment adopt the explanations in embodiment 1, which are not described herein again.
The main features of this embodiment are: the nonmagnetic spacer layer 21102 of the magnetic spin valve 2110 is made of a metal material including, but not limited to, one or more of Cu, au, ag, cr, mo, W, al, and Mg, and the thickness of the nonmagnetic spacer layer 21102 is 2-10nm.
The nonmagnetic separation layer 21102 is made of a metal material, so that the impedance of the magnetic spin valve 2110 can be reduced, and sufficient current can be generated under the weak input microwave energy to drive the magnetization direction of the magnetic free layer 21103 to be changed, thereby facilitating the absorption of radio frequency energy; the defects are that after the nonmagnetic separation layer 21102 made of a metal material is adopted, the equivalent spin polarization rate of the magnetic spin valve 2110 is relatively low, the threshold current of the magnetic free layer 21103 is increased, and the amplitude of the output direct-current voltage is reduced. In practice, it is necessary to select whether to use a metal material as the nonmagnetic spacer layer 21102 or not according to the specific situation.
Example 3:
in one of the implementation methods of the radio frequency energy harvester in the present invention, the main technical solution of this embodiment is similar to that of embodiment 1, and features not explained in this embodiment adopt the explanations in embodiment 1, and are not described herein again.
The main characteristics of this embodiment are: the nonmagnetic spacer layer 21102 of the magnetic spin valve 2110 is made of an insulating material including, but not limited to, mgO, al 2 O 3 ，MgAl 2 O 4 ，HfO 2 ZrO, znO, the thickness of the nonmagnetic spacer layer 21102 is 0.3-1nm.
The use of the insulating material as the nonmagnetic spacer layer 21102 has the advantages that the equivalent spin polarizability of the magnetic spin valve 2110 is high, the threshold current of the magnetic free layer 21103 can be reduced, and the amplitude of the output dc voltage can be increased; the disadvantage is that the impedance of the magnetic spin valve 2110 is high, which is not good for absorbing rf energy. In practice, it is necessary to select whether to use an insulating material as the nonmagnetic spacer layer 21102 or not according to the specific situation.
Example 4:
in one of the implementation methods of the radio frequency energy harvester in the present invention, the main technical solution of this embodiment is similar to that in embodiments 1 to 3, and features that are not explained in this embodiment adopt the explanations in embodiments 1 to 3, which are not described herein again.
The main features of this embodiment are: as shown in fig. 3, the rf energy converter 20 includes a plurality of rf energy converting units 210a, 210b, and 210c connected in series, and the dc voltages generated by the rf energy converting units 210a, 210b, and 210c are connected in series to increase the amplitude of the output dc voltage. For the consideration of impedance matching, there is a certain upper limit to the number of the rf energy transforming units that can be connected in series, otherwise, the impedance of the rf energy transforming unit may be too large to absorb the rf energy.
Example 5:
in one of the implementation methods of the radio frequency energy harvester in the present invention, the main technical solution of this embodiment is similar to that in embodiments 1 to 4, and features that are not explained in this embodiment adopt the explanations in embodiments 1 to 4, which are not described herein again.
The main features of this embodiment are: the rf energy converter 20 includes a plurality of rf energy converting unit groups, each of which includes a plurality of rf energy converting units connected in series. As shown in fig. 4, the rf energy converting units 210a to 210c, 201d to 210f, and 210g to 210i respectively form three rf energy converting unit groups, and the three rf energy converting unit groups are connected in series through inductors 211a and 211b, and form a parallel connection relationship through capacitors 212a to 212 f.
When the rf energy converter 20 operates in the frequency range of the rf signal, the impedances of the inductors 211a and 211b at high frequency are large, and the impedances of the capacitors 212a to 212f at high frequency are small, so that the three groups of rf energy converting units are connected in parallel. For the output dc voltage signal, the dc impedances of the inductors 211a and 211b are approximately short-circuited, while the dc impedances of the capacitors 212a to 212f are approximately open-circuited, and the three groups of rf energy converting unit groups are connected in series.
The embodiment has the advantages that each radio frequency energy conversion unit group can comprise a plurality of radio frequency energy conversion units, the amplitude of the output direct current voltage is improved, the radio frequency energy conversion unit groups form a series connection relationship through inductance, and the amplitude of the output direct current voltage is further improved for direct current signals; meanwhile, the radio frequency energy conversion unit groups form a parallel connection relationship through the capacitors, and for the frequency range of the radio frequency signals, the impedance of the radio frequency energy converter 20 is reduced in a parallel connection mode, so that the radio frequency energy can be absorbed more effectively.
Example 6:
in one of the implementation methods of the radio frequency energy harvester in the present invention, the main technical solution of this embodiment is similar to that in embodiments 1 to 5, and features that are not explained in this embodiment adopt the explanations in embodiments 1 to 5, which are not described herein again.
The main features of this embodiment are: as shown in fig. 5, the rf energy harvester 1 further includes a voltage stabilizing circuit 30, which can reduce the range of amplitude variation of the output dc voltage. The voltage regulator circuit 30 may be composed of a resistor and a capacitor, and may also include other components or circuits.
As shown in fig. 2 (c), the dc voltage output by the rf energy converter 20 has a large variation range, and the dc voltage can be stabilized by an RC circuit composed of a resistor and a capacitor. As an example, assuming that the time constant of the RC circuit is 2.2 times of the period of the rf signal, the regulated dc voltage is as shown in fig. 2 (d). It can be seen from the figure that the fluctuation range of the regulated dc voltage is significantly reduced.
Example 7:
in one embodiment of the method for implementing a radio frequency energy harvester module, a main technical scheme of the radio frequency energy harvester is similar to that in embodiments 1 to 6, and features not explained in this embodiment are explained in embodiments 1 to 6, and are not described herein again.
As shown in fig. 6, the rf energy harvester module 1' includes a plurality of the rf energy harvesters 1. The radio frequency energy collectors 1 are connected in series, so that the amplitude of the output direct current voltage is improved.
Example 8:
in one embodiment of the method for implementing a radio frequency energy harvester or a radio frequency energy harvester module of the present invention, the main technical solution of this embodiment is similar to that in embodiments 1 to 7, and features that are not explained in this embodiment are explained in embodiments 1 to 7, and are not described herein again.
The main features of this embodiment are: the radio frequency energy harvester 1 or the radio frequency energy harvester module 1' is prepared on a flexible material substrate, and the flexible material comprises one or more of polyimide, polyethylene, polydimethylsiloxane, polyethylene terephthalate and polyurethane. The flexible material substrate has the characteristics of high ductility, good flexibility, deformability, low cost and the like, and has wide application prospects in multiple fields of wearable equipment, biomedical treatment, exercise and fitness, intelligent sensing and the like.
Example 9:
the invention relates to a circuit for supplying power by utilizing radio frequency energy in environment. As shown in fig. 7, the circuit 4 for supplying power by using rf energy in the environment includes: a radio frequency energy harvester 1 and a working circuit 3. The main technical scheme of the radio frequency energy harvester 1 is similar to that of the embodiments 1 to 6, and the features not explained in this embodiment are explained in the embodiments 1 to 6, and are not described herein again.
The operating circuit 3 may be an integrated circuit or a sensor circuit, or a combination of both, and is responsible for collecting, processing, or transmitting signals. The radio frequency energy collector 1 converts the radio frequency energy in the environment into direct current voltage to supply power for the working circuit 3, so that the working reliability of the working circuit 3 can be improved, and the maintenance cost is reduced.
The rf energy harvester 1 may also be replaced by the rf energy harvester module 1', without affecting the essence of this embodiment.
Example 10:
the invention relates to a circuit for supplying power by utilizing radio frequency energy in environment. The main technical solution of this embodiment is similar to that of embodiment 9, and the features that are not explained in this embodiment adopt the explanations in embodiment 9, which are not described again here.
As shown in fig. 8, the circuit 4 for supplying power by using rf energy in the environment includes: a radio frequency energy harvester 1, a battery circuit 2 and a working circuit 3. The battery circuit 2 supplies power to the operating circuit 3. The radio frequency energy collector 1 converts radio frequency energy in the environment into direct current voltage to charge the battery circuit 2, so that the working circuit 3 can work for a long time without replacement. Because the radio frequency energy collector 1 is used for charging the battery circuit 2, and does not directly supply power to the working circuit 3, even if the radio frequency energy source in the environment fluctuates, the stable work of the working circuit 3 is not influenced.
The rf energy harvester 1 can also be replaced by an rf energy harvester module 1', without affecting the essence of this embodiment.
In the description of the present invention, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and larger, smaller, larger, etc. are understood as excluding the present numbers, and larger, smaller, inner, etc. are understood as including the present numbers. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly defined, terms such as set, etc. should be broadly construed, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the detailed contents of the technical solutions.
In the description of the present invention, reference to the description of "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc., means that a particular feature or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements and substitutions will now be apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (11)
1. A radio frequency energy harvester, characterized by: at least comprises a radio frequency energy receiver and a radio frequency energy converter;
the radio frequency energy receiver receives radio frequency energy existing in the environment and transmits the received radio frequency energy to the radio frequency energy converter;
the radio frequency energy converter comprises a radio frequency energy conversion unit, the radio frequency energy conversion unit comprises a magnetic spin valve and a semiconductor Hall strip, the magnetic spin valve comprises a vertically magnetized magnetic fixed layer, a vertically magnetized magnetic free layer and a non-magnetic separation layer between the magnetic fixed layer and the magnetic free layer, and the semiconductor Hall strip comprises a Hall strip main body and a first Hall voltage pin and a second Hall voltage pin which are positioned on two sides of the Hall strip main body;
after receiving radio frequency energy, a first radio frequency current and a second radio frequency current respectively pass through the magnetic spin valve and the semiconductor Hall bar; the magnetic spin valve is characterized in that a first radio-frequency current flowing in the magnetic spin valve generates a spin torque changing along with time to cause the magnetization direction of a magnetic free layer with superparamagnetism to change along with time oscillation, so that a vertical magnetic field changing along with time oscillation is generated at a semiconductor Hall strip, and under the combined action of the oscillation changing magnetic field and a second radio-frequency current flowing in the semiconductor Hall strip, the semiconductor Hall strip generates a direct-current voltage which is led out through a first Hall voltage pin and a second Hall voltage pin.
2. A radio frequency energy harvester according to claim 1, wherein: the nonmagnetic separation layer is made of metal materials including one or more of Cu, au, ag, cr, mo, W, al and Mg, and the thickness of the nonmagnetic separation layer is 2-10nm.
3. A radio frequency energy harvester according to claim 1, wherein: the non-magnetic separation layer is made of insulating material containing MgO and Al 2 O 3 ，MgAl 2 O 4 ，HfO 2 ZrO, znO, the thickness of the nonmagnetic spacer layer being 0.3-1nm.
4. The radio frequency energy harvester of claim 1, wherein the energy harvesterIn the following steps: the semiconductor Hall strip is made of one or more of Si, ge, siGe, gaAs, inAs, inSb, alGaAs, inGaAs and InGaSb; the carrier concentration of the semiconductor Hall strip is 10 15 -10 19 cm -3 The thickness is 5-200nm.
5. The radio frequency energy harvester of claim 1, wherein: and a dielectric separation layer is also arranged between the magnetic spin valve and the semiconductor Hall strip, and the material of the dielectric separation layer comprises one or more of SiOx, siNx, siOxNy, alNx, alOx and MgO.
6. A radio frequency energy harvester according to any of claims 1-5, wherein: the radio frequency energy converter comprises a plurality of radio frequency energy conversion units which are connected in series and used for improving the amplitude of the output direct current voltage.
7. A radio frequency energy harvester according to any of claims 1-5, wherein: the radio frequency energy converter comprises a plurality of radio frequency energy conversion unit groups, and any radio frequency energy conversion unit group comprises a plurality of radio frequency energy conversion units which are connected in series; for the frequency interval of the radio frequency signals, all the radio frequency energy conversion unit groups are connected in parallel, the impedance of the radio frequency energy converter is reduced, and the impedance is matched with the impedance of the radio frequency energy receiver; for the frequency interval of the direct current signal, the radio frequency energy conversion unit groups are connected in series, so that the amplitude of the output direct current voltage is improved.
8. The radio frequency energy harvester of claim 1, wherein: the radio frequency energy collector is prepared on a flexible material substrate, and the flexible material comprises one or more of polyimide, polyethylene, polydimethylsiloxane, polyethylene terephthalate and polyurethane.
9. A radio frequency energy harvester module which characterized in that: comprising a plurality of radio frequency energy harvesters according to any of claims 1-8 connected in series with each other for increasing the amplitude of the output dc voltage.
10. A circuit for powering an environment using radio frequency energy, the circuit comprising: the radio frequency energy harvester or radio frequency energy harvester module of any one of claims 1-9 and a working circuit, wherein the radio frequency energy harvester or radio frequency energy harvester module is configured to convert radio frequency energy in an environment into a direct current voltage to power the working circuit.
11. The circuit powered by radio frequency energy in an environment of claim 10, wherein: the radio frequency energy collector or the radio frequency energy collector module converts radio frequency energy in the environment into direct current voltage, and the battery circuit is charged.
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| CN202211112918.6A CN115498785A (en) | 2022-09-14 | 2022-09-14 | Collector of radio frequency energy, collector module and power supply circuit |
| CN202321981644.4U CN220553851U (en) | 2022-09-14 | 2023-07-26 | Radio frequency energy collector, collector module and power supply circuit |
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| CN202211112918.6A CN115498785A (en) | 2022-09-14 | 2022-09-14 | Collector of radio frequency energy, collector module and power supply circuit |
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| US5629549A (en) * | 1995-04-21 | 1997-05-13 | Johnson; Mark B. | Magnetic spin transistor device, logic gate & method of operation |
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