CN115473026A - Thin film filter and manufacturing method thereof - Google Patents
Thin film filter and manufacturing method thereof Download PDFInfo
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- CN115473026A CN115473026A CN202211114314.5A CN202211114314A CN115473026A CN 115473026 A CN115473026 A CN 115473026A CN 202211114314 A CN202211114314 A CN 202211114314A CN 115473026 A CN115473026 A CN 115473026A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
- H05K3/462—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination characterized by laminating only or mainly similar double-sided circuit boards
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Abstract
The invention discloses a thin film filter and a manufacturing method thereof, belonging to the technical field of manufacturing of microstrip thin film filters, wherein the thin film filter comprises substrates, the number of the substrates is at least two, the substrates are vertically overlapped, the upper surface and the lower surface of each substrate are respectively provided with an upper reinforcing connecting layer and a lower reinforcing connecting layer, the upper surface and the lower surface of each of the upper reinforcing connecting layer and the lower reinforcing connecting layer are provided with an upper circuit and a lower circuit, each substrate is also provided with at least one through hole, a metal conducting layer is coated on the inner wall of each through hole for one circle, and the metal conducting layer is in conductive connection with the upper circuit and the lower circuit of the substrate; the manufacturing method comprises the steps of manufacturing a single-layer wafer thin film circuit, and bonding, cutting and scribing between the wafer thin film circuits, wherein the thin film filter is of a multilayer structure, the size is smaller and more compact, the thin film filter is suitable for manufacturing a semiconductor process, and the filter bandwidth is larger.
Description
Technical Field
The invention relates to a thin film filter and a manufacturing method thereof, belonging to the technical field of manufacturing of microstrip thin film filters.
Background
The traditional thin film filter is generally a single-layer thin film filter manufactured by a single-layer thin film circuit process, the structure is simple, the working frequency range of the manufactured filter is relatively not wide enough, the bandwidth of the traditional single-layer thin film filter can only reach 50% -60%, if the bandwidth can not be realized by 60% -80%, the single-layer thin film filter needs to be horizontally spliced after being designed in a segmented mode, but the area is increased, the miniaturization is not facilitated, standing waves and loss are large, and the size is relatively large due to the fact that a circuit with a planar structure is adopted; the multilayer structure filter is represented by an LTCC filter (using screen printing).
The LTCC technology is that microwave dielectric ceramic powder is made into a dense green ceramic tape with precise thickness, then thick film printing technology is used for printing and drying on the green ceramic tape, required circuit patterns are made on the green ceramic tape, then the green ceramic tape is laminated together, and sintering is carried out at 900 ℃ after glue discharging.
In the LTCC filter characteristics, the frequency is an important point, and the main reason for influencing the frequency deviation is the thickness of the ceramic dielectric layer after sintering the green tape, because the thickness of the metal electrode on the green tape is influenced in the stacking and sintering processes of printing the metal electrode of 6-18 μm on the green tape, and the thickness difference of the ceramic dielectric layer formed by sintering influences the frequency due to the stacking pressure and sintering shrinkage of the green tape. And the screen printing process is utilized, so that the process precision is lower.
Disclosure of Invention
The first technical problem to be solved by the invention is as follows: the thin film filter is of a multilayer structure, is smaller and more compact in size, is suitable for being manufactured by a semiconductor process, and is larger in filter bandwidth.
The second technical problem to be solved by the invention is: the preparation method of the thin film filter utilizes semiconductor photoetching and sputtering processes to prepare the multilayer thin film filter, and the thin film filter has larger filtering bandwidth, smaller size and more compactness.
In order to solve the technical problem, the technical scheme of the invention is as follows: a thin film filter comprises substrates made of semiconductor materials, wherein the substrates are at least two layers and are stacked up and down, the upper surface and the lower surface of each substrate are respectively provided with an upper reinforcing connecting layer and a lower reinforcing connecting layer, the upper surface and the lower surface of each upper reinforcing connecting layer and the lower surface of each lower reinforcing connecting layer are respectively provided with an upper circuit and a lower circuit, each substrate is also provided with at least one through hole, a metal conducting layer is wrapped on the periphery of the inner wall of each through hole, and the upper end and the lower end of each metal conducting layer are higher than the through holes and are respectively in conductive connection with the upper circuit and the lower circuit of each substrate; the lower circuit of the substrate on the upper layer and the upper circuit of the substrate on the adjacent lower layer are respectively provided with a lower bonding bulge and an upper bonding bulge which correspond to each other one by one, the lower bonding bulge and the upper bonding bulge are bonded with each other to electrically connect the lower circuit of the substrate on the upper layer and the upper circuit of the substrate on the lower layer, and an independent bonding support structure is arranged between the adjacent surfaces of the substrates.
As a preferred scheme, the bonding bearing structure includes that the last supporting projection and the lower support of metal are protruding, go up the supporting projection and set up between the clearance of the upper circuit of the base plate of lower floor and isolated, the lower support is protruding to set up between the clearance of the lower circuit of the base plate of upper strata and isolated, go up the protruding mutual bonding of supporting projection and lower support and connect, through this bonding bearing structure under the circumstances that does not influence the shaping of making things convenient for upper circuit and lower circuit and set up the position, rationally select empty position to go up the protruding setting of supporting projection and lower support, the flexibility is stronger.
As a preferable scheme, the lower bonding protrusion and the upper bonding protrusion are respectively disposed at the lower end and the upper end of the metal conductive layer, the through holes on each substrate are in the same position, and the lower bonding protrusion of the metal conductive layer on the substrate on the upper layer is bonded to the upper bonding protrusion of the metal conductive layer on the substrate on the lower layer. Because the lower bonding bulge and the upper bonding bulge are respectively arranged at the lower end and the upper end of the metal conducting layer, the upper bonding bulge and the lower bonding bulge can be conveniently formed while the metal conducting layer is formed, and the forming process steps are relatively simpler.
As a preferable scheme, the upper bonding protrusion is disposed at the upper end of the metal conductive layer, the lower bonding protrusion is disposed on the lower circuit, and the lower bonding protrusion on the upper substrate is bonded to the upper bonding protrusion on the lower substrate.
As a preferable scheme, the lower bonding protrusion is disposed at the lower end of the metal conductive layer, the upper bonding protrusion is disposed on the upper circuit, and the lower bonding protrusion on the upper substrate is bonded to the upper bonding protrusion on the lower substrate.
As a preferable scheme, the lower bonding protrusion and the upper bonding protrusion are respectively disposed on the lower circuit and the upper circuit, and the upper end and the lower end of the metal conductive layer respectively correspond to a gap between the upper circuit and the lower circuit.
Preferably, the upper bonding bump, the lower supporting bump and the upper supporting bump have the same bump height and are all 3 ± 0.5 μm.
After the technical scheme is adopted, the invention has the effects that: the thin film filter comprises substrates made of semiconductor materials, wherein the number of the substrates is at least two, the substrates are vertically overlapped, an upper reinforcing connecting layer and a lower reinforcing connecting layer are respectively arranged on the upper surface and the lower surface of each substrate, an upper circuit and a lower circuit are arranged on the upper surface and the lower surface of each upper reinforcing connecting layer and each lower reinforcing connecting layer, at least one through hole is further arranged on each substrate, a metal conducting layer is wrapped on the inner wall of each through hole in a circle, and the upper end and the lower end of each metal conducting layer are higher than the through holes and are respectively in conductive connection with the upper circuit and the lower circuit of each substrate; the lower circuit of the substrate on the upper layer and the upper circuit of the substrate on the adjacent lower layer are respectively provided with a lower bonding bulge and an upper bonding bulge which correspond to each other one by one, the lower bonding bulge and the upper bonding bulge are bonded with each other to electrically connect the lower circuit of the substrate on the upper layer and the upper circuit of the substrate on the lower layer, and an independent bonding support structure is arranged between the adjacent surfaces of the substrates.
To solve the second technical problem, the invention adopts the following scheme: a preparation method of a thin film filter is used for preparing the thin film filter and comprises the following three steps of manufacturing a single-layer wafer thin film circuit, bonding the wafer thin film circuit and cutting and scribing:
1. the manufacturing method of the single-layer wafer thin film circuit comprises the following steps:
s11, polishing, cleaning and drying two surfaces of the wafer;
s12, sputtering a Ti layer or a Tiw layer on the upper surface and the lower surface of the wafer in a magnetron sputtering mode to form an upper reinforced connecting layer and a lower reinforced connecting layer, wherein the thickness of the upper reinforced connecting layer and the thickness of the lower reinforced connecting layer are 50 +/-2 nm;
s13, respectively sputtering an upper metal layer and a lower metal layer on the outer surfaces of the upper reinforcing connecting layer and the lower reinforcing connecting layer in a magnetron sputtering mode, wherein the thicknesses of the upper metal layer and the lower metal layer are 3000 +/-50 nm;
s14, manufacturing a photoresist pattern on the outer surfaces of the upper metal layer and the lower metal layer in a negative or positive photoetching mode;
s15, using the photoresist pattern for mask protection, adopting a wet etching process to completely remove the upper metal layer and the lower metal layer outside the photoresist pattern to form a plurality of circuit modules, forming an upper circuit, a lower circuit and a bonding support structure on the upper metal layer and the lower metal layer on each circuit module, and then removing the photoresist pattern on the surfaces of the upper metal layer and the lower metal layer;
s16, manufacturing a circular through hole on each circuit module on the wafer by utilizing a laser etching or deep silicon etching process, wherein the position of the through hole is located in a gap between the upper circuit and the lower circuit; the diameter of the through hole is 0.1-1mm, and the taper of the through hole is 83-88 degrees;
s17, protecting all areas except the through hole and the bonding point by adopting a negative photoresist in a photoetching mode, and exposing the through hole and the bonding point in a photoetching development mode;
s18, respectively sputtering and generating a metal conducting layer and a bonding layer on the inner wall of the through hole and the bonding point by adopting the same method as the steps S12 and S13, wherein the metal conducting layer is used for electrically connecting the upper circuit and the lower circuit; one part of the bonding layer is positioned on the upper circuit and the lower circuit of each circuit module and used as an upper bonding bulge and a lower bonding bulge, and the other part of the bonding layer is positioned on the bonding support structure and is convenient for supporting bonding;
s19, removing the photoresist in the step S17 to finish the manufacture of the single-layer wafer thin film circuit;
2. the bonding between the wafer thin film circuits comprises the following sub-steps:
s21, bonding wafer thin film circuits in pairs
Matching the corresponding single-layer wafer thin film circuits, wherein the bonding layer positions of the two matched single-layer wafer thin film circuits are in one-to-one correspondence; bonding the wafers by using wafer bonding equipment, wherein the bonding temperature is 280 +/-10 ℃, the air pressure is 0.08-0.15Pa, the pressure is 18-22KN, and the bonding time is 2h; the upper bonding bulge and the lower bonding bulge after bonding are firmly connected;
s23, bonding of multilayer wafers
Pairing the wafer groups which are already bonded in the step S21 again, wherein the bonding layer positions of the two paired single-layer wafer thin film circuits are in one-to-one correspondence; bonding is carried out by adopting the same bonding parameters as those in the step S21 to form a film wafer group with even layers;
3. cutting and scribing
And cutting the circuit module in the bonded wafer into a plurality of small devices by adopting a wafer abrasive wheel cutting machine to form the film filter.
After the technical scheme is adopted, the invention has the effects that: 1. the manufacturing method utilizes the photoetching, sputtering, bonding and cutting processes of semiconductors to manufacture the multilayer thin film filter, so that the product has small size, small standing wave loss, wide working frequency range and high reliability; 2. 3, the thin film filter manufactured by the manufacturing method adopts a semiconductor material wafer with higher heat conductivity, so that the heat dissipation problem of the filter is solved; 4. according to the manufacturing method, the upper reinforced connecting layer and the lower reinforced connecting layer are sputtered on the upper surface and the lower surface of the wafer, so that the adhesive force of a circuit is improved, and a bonding process is utilized, so that the conductive connection is met, meanwhile, the supporting force is provided, and the firm connection and the transverse connection between single-layer wafer thin film circuits are ensured.
Preferably, in step S18, the upper bonding bumps and the lower bonding bumps are disposed at the upper end and the lower end of the metal conductive layer and are formed during the sputtering process of the metal conductive layer, so that the number of bonding points disposed on the upper circuit and the lower circuit can be reduced, and the influence on the pattern uniformity of the upper circuit and the lower circuit when the bonding points are bonded is avoided.
Preferably, in S16, when the wafer is a silicon wafer, the circular through hole is formed by deep silicon etching; when the wafer is made of aluminum nitride, the circular through hole is manufactured by adopting a laser etching process, in the step S15, the step of removing the photoresist patterns on the surfaces of the upper metal layer and the lower metal layer is moved to the step S16 after the circular through hole is formed.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic structural diagram of the embodiment of the present invention after step S11;
FIG. 2 is a schematic structural diagram after step S12 according to the embodiment of the present invention;
FIG. 3 is a schematic structural diagram of the embodiment of the present invention after step S13;
FIG. 4 is a schematic structural diagram of the embodiment of the present invention after step S14;
FIG. 5 is a schematic structural diagram of the embodiment of the present invention after step S15;
FIG. 6 is a schematic structural diagram of the embodiment of the present invention after the photoresist is removed in step S15;
FIG. 7 is a schematic structural diagram of the embodiment of the present invention after step S16;
FIG. 8 is a schematic structural diagram of the embodiment of the present invention after step S17;
fig. 9 is a schematic structural diagram of the photoresist after step S17 to remove the through hole and the bonding point in the embodiment of the present invention;
FIG. 10 is a schematic structural diagram of the embodiment of the present invention after steps S18 and S19;
FIG. 11 is a schematic structural diagram after step S21 according to the embodiment of the present invention;
FIG. 12 is a schematic view of a dicing saw according to an embodiment of the present invention;
FIG. 13 is a schematic view of a dicing structure;
FIG. 14 is a schematic view of another structure of the dicing saw;
in the drawings: 1. a substrate; 2. an upper reinforcing connection layer; 3. a lower reinforcing tie layer; 4. an upper metal layer; 5. a lower metal layer; 6. an upper circuit; 7. a lower circuit; 8. an upper support boss; 9. a lower support protrusion; 10. a through hole; 11. a metal conductive layer; 12. an upper bonding boss; 13. a lower bonding boss; A. and (5) photoresist pattern.
Detailed Description
The present invention is described in further detail below with reference to specific examples.
As shown in fig. 13 and 14, a thin film filter includes a substrate 1 made of a semiconductor material, wherein the substrate 1 may be a semiconductor silicon wafer or aluminum nitride, the number of the substrates 1 is at least two, and the substrates are stacked one on top of the other, an upper reinforcing connection layer 2 and a lower reinforcing connection layer 3 are respectively disposed on an upper surface and a lower surface of each substrate 1, and the upper reinforcing connection layer 2 and the lower reinforcing connection layer 3 may be Ti or Tiw; an upper circuit 6 and a lower circuit 7 are arranged on the upper surface and the lower surface of the upper reinforced connecting layer 2 and the lower reinforced connecting layer 3, the upper circuit 6 and the lower circuit 7 are made of copper materials, each substrate 1 is also provided with at least one through hole 10, each through hole 10 is a circular through hole 10, the diameter of each through hole is 0.1-1mm, the taper of each through hole 10 is 83-88 degrees, a metal conducting layer 11 is wrapped on the inner wall of each through hole 10 for one circle, and the upper end and the lower end of each metal conducting layer 11 are higher than the through holes 10 and are respectively in conductive connection with the upper circuit 6 and the lower circuit 7 of the substrate 1; the lower circuit 7 of the substrate 1 on the upper layer and the upper circuit 6 of the substrate 1 on the adjacent lower layer are respectively provided with a lower bonding bulge 13 and an upper bonding bulge 12 which are in one-to-one correspondence, the lower bonding bulge 13 and the upper bonding bulge 12 are bonded with each other to electrically connect the lower circuit 7 of the substrate 1 on the upper layer and the upper circuit 6 of the substrate 1 on the lower layer, and an independent bonding supporting structure is arranged between the adjacent surfaces of the substrates 1, so that the upper circuit 6 and the lower circuit 7 on the same substrate 1 are electrically connected through the metal conducting layer 11, and then the adjacent substrates 1 are electrically connected through the upper bonding bulge 12 and the lower bonding bulge 13, thereby forming a complete circuit structure.
In this embodiment, the bonding bearing structure includes protruding 8 of last support and the protruding 9 of lower support of metal, it sets up between the clearance of the last circuit 6 of the base plate 1 of lower floor and isolated to go up the protruding 8 of support, the protruding 9 of lower support sets up between the clearance of the lower circuit 7 of the base plate 1 of upper strata and isolated, go up the protruding 8 of support and the mutual bonding of the protruding 9 of lower support and connect, through this bonding bearing structure under the condition that does not influence the shaping of convenient last circuit 6 and lower circuit 7 and set up the position, rationally select the vacant position to go up the setting of the protruding 8 of support and the protruding 9 of lower support, the flexibility is stronger.
In this embodiment, as shown in fig. 13, the lower bonding bumps 13 and the upper bonding bumps 12 are respectively disposed at the lower end and the upper end of the metal conductive layer 11, the through holes 10 on each substrate 1 are in the same position, and the lower bonding bumps 13 of the metal conductive layer 11 on the substrate 1 on the upper layer and the upper bonding bumps 12 of the metal conductive layer 11 on the substrate 1 on the lower layer are bonded and connected. Because the lower bonding protrusion 13 and the upper bonding protrusion 12 are respectively arranged at the lower end and the upper end of the metal conductive layer 11, the upper bonding protrusion 12 and the lower bonding protrusion 13 can be conveniently formed while the metal conductive layer 11 is formed, and the forming process steps are relatively simpler.
Of course, other structures are possible, for example, as shown in fig. 14, the upper bonding bump 12 is disposed on the upper end of the metal conductive layer 11, the lower bonding bump 13 is disposed on the lower circuit 7, and the lower bonding bump 13 on the upper substrate 1 is bonded to the upper bonding bump 12 on the lower substrate 1.
Of course, the lower bonding protrusion 13 is disposed at the lower end of the metal conductive layer 11, the upper bonding protrusion 12 is disposed on the upper circuit 6, and the lower bonding protrusion 13 on the upper substrate 1 is bonded to the upper bonding protrusion 12 on the lower substrate 1. Or the lower bonding bumps 13 and the upper bonding bumps 12 are respectively arranged on the lower circuit 7 and the upper circuit 6, and the upper end and the lower end of the metal conductive layer 11 respectively correspond to the gap between the upper circuit 6 and the lower circuit 7.
The upper bonding bulge 12, the lower bonding bulge 13, the lower supporting bulge 9 and the upper supporting bulge 8 are consistent in height and are all 3 +/-0.5 microns.
After the technical scheme is adopted, the invention has the effects that: the thin film filter comprises substrates 1 made of semiconductor materials, wherein the number of the substrates 1 is at least two, the substrates are vertically stacked, an upper reinforcing connecting layer 2 and a lower reinforcing connecting layer 3 are respectively arranged on the upper surface and the lower surface of each substrate 1, an upper circuit 6 and a lower circuit 7 are arranged on the upper surface and the lower surface of each upper reinforcing connecting layer 2 and each lower reinforcing connecting layer 3, each substrate 1 is also provided with at least one through hole 10, a metal conducting layer 11 is wrapped on the inner wall of each through hole 10 in a circle, and the upper end and the lower end of each metal conducting layer 11 are higher than the through holes 10 and are respectively in conductive connection with the upper circuit 6 and the lower circuit 7 of the substrate 1; the lower circuit 7 of the substrate 1 on the upper layer and the upper circuit 6 of the substrate 1 on the adjacent lower layer are respectively provided with a lower bonding bulge 13 and an upper bonding bulge 12 which are in one-to-one correspondence, the lower bonding bulge 13 and the upper bonding bulge 12 are bonded with each other to electrically connect the lower circuit 7 of the substrate 1 on the upper layer and the upper circuit 6 of the substrate 1 on the lower layer, and an independent bonding support structure is arranged between the adjacent surfaces of the substrates 1, so that the thin film filter adopts the substrate 1 supported by semiconductor materials as a base material and is stacked up and down, each substrate 1 is provided with an upper reinforcing connection layer 2 and a lower reinforcing connection layer 3, sufficient connection force is conveniently provided for the connection of the upper circuit 6 and the lower circuit 7, the upper circuit 6 and the lower circuit 7 are electrically connected through the metal conductive layer 11 on the inner wall of the through hole 10 to form a required circuit connection structure, and the stacked upper circuit 6 and the lower circuit 7 also form an integral circuit structure, thereby meeting the design requirement of large bandwidth, the standing wave and the loss are small in size, and meanwhile, the stable bonding support structure can conveniently support the stable bonding between the adjacent substrates 1 and ensure the stable bonding.
In addition, the embodiment of the invention also discloses a preparation method of the thin film filter, which is used for preparing the thin film filter and comprises three steps of manufacturing a single-layer wafer thin film circuit, bonding the wafer thin film circuit and cutting and scribing:
1. the manufacturing method of the single-layer wafer thin film circuit comprises the following steps:
s11, polishing, cleaning and drying two surfaces of the wafer; as shown in fig. 1, the wafer may be a silicon wafer or aluminum nitride;
s12, sputtering a Ti layer or a Tiw layer on the upper surface and the lower surface of the wafer by adopting a magnetron sputtering mode to form an upper reinforcing connecting layer 2 and a lower reinforcing connecting layer 3, wherein the thicknesses of the upper reinforcing connecting layer 2 and the lower reinforcing connecting layer 3 are 50 +/-2 nm as shown in figure 2; wherein the magnetron sputtering step is completed in magnetron sputtering equipment, and the magnetron sputtering is a mature process;
s13, respectively sputtering an upper metal layer 4 and a lower metal layer 5 on the outer surfaces of the upper reinforcing connecting layer 2 and the lower reinforcing connecting layer 3 in a magnetron sputtering mode, wherein the thicknesses of the upper metal layer 4 and the lower metal layer 5 are 3000 +/-50 nm; as shown in fig. 3, the layered structures are only schematically shown and are not drawn according to the thickness of the corresponding layer.
S14, as shown in the figure 4, adopting a negative or positive photoetching mode to glue the outer surfaces of the upper metal layer 4 and the lower metal layer 5 to form a photoresist pattern A;
s15, as shown in the figures 5 and 6, the photoresist pattern A is used for mask protection, a wet etching process is adopted, the upper metal layer 4 and the lower metal layer 5 outside the photoresist pattern A are completely removed to form a plurality of circuit modules, the upper metal layer 4 and the lower metal layer 5 on each circuit module form an upper circuit 6, a lower circuit 7 and a bonding support structure, and then the photoresist pattern A on the surfaces of the upper metal layer 4 and the lower metal layer 5 is removed;
s16, as shown in FIG. 7, a circular through hole 10 is manufactured on each circuit module on the wafer by utilizing a laser etching or deep silicon etching process, and the position of the through hole 10 is located in a gap between the upper circuit 6 and the lower circuit 7; the diameter of the through hole 10 is 0.1-1mm, and the taper of the through hole 10 is 83-88 degrees; in the step S16, when the wafer is a silicon wafer, the circular through hole 10 is made by deep silicon etching; when the wafer is made of aluminum nitride, the circular through hole 10 is manufactured by adopting a laser etching process, in the step S15, the step A of removing the photoresist patterns on the surfaces of the upper metal layer 4 and the lower metal layer 5 is moved to the step S16 after the circular through hole 10 is formed.
S17, protecting all areas except the through hole 10 and the bonding point by adopting negative photoresist in a photoetching mode, and exposing the through hole 10 and the bonding point in a photoetching development mode; the basic feature of negative tone lithography is that the photoresist becomes insoluble and hardens due to cross-linking when exposed to light. Once hardened, the crosslinked photoresist cannot be washed away in a solvent because the pattern on the photoresist is the inverse of the pattern on the reticle. In the step, negative photoresist is adopted for photoetching, so that the region except the through hole 10 and the bonding point accident can be better covered; the short circuit phenomenon caused by the connection with other circuits when the metal layer is generated in the subsequent magnetron sputtering step is avoided.
S18, respectively sputtering and generating a metal conducting layer 11 and a bonding layer on the inner wall and the bonding point of the through hole 10 by adopting the same method as the steps S12 and S13, wherein the metal conducting layer 11 electrically connects the upper circuit 6 and the lower circuit 7; one part of the bonding layer is positioned on the upper circuit 6 and the lower circuit 7 of each circuit module to be used as an upper bonding bump 12 and a lower bonding bump 13, and the other part of the bonding layer is positioned on the bonding support structure to facilitate supporting bonding; of course, since the upper and lower ends of the metal conductive layer 11 are connected to the upper and lower circuits 6 and 7, respectively, bonding layers may be provided at the upper and lower ends of the metal conductive layer 11.
S19, removing the photoresist in the step S17 to finish the manufacture of the single-layer wafer thin film circuit;
2. the bonding between the wafer thin film circuits comprises the following sub-steps:
s21, bonding two wafer thin film circuits
Matching the corresponding single-layer wafer thin film circuits, wherein the bonding layer positions of the two matched single-layer wafer thin film circuits are in one-to-one correspondence; adopting wafer bonding equipment to bond wafers, wherein the bonding temperature is 280 +/-10 ℃, the air pressure is 0.08-0.15Pa, the pressure is 18-22KN, and the bonding time is 2h; the upper bonding bulge 12 and the lower bonding bulge 13 after bonding are firmly connected; the lower supporting bulges 9 and the upper supporting bulges 8 are also bonded with each other, so that two layers of wafer thin film circuits are reliably supported;
s23, bonding of multilayer wafers
Pairing the wafer groups which are bonded in the step S21 again, wherein the bonding layer positions of the two paired single-layer wafer thin film circuits are in one-to-one correspondence; bonding is carried out by adopting the same bonding parameters as those in the step S21 to form a film wafer group with even layers;
3. dicing saw blade
And cutting the circuit module in the bonded wafer into a plurality of small devices by adopting a wafer abrasive wheel cutting machine to form the film filter.
The manufacturing method utilizes the photoetching, sputtering, bonding and cutting processes of a semiconductor to manufacture the multilayer film filter, the layer number of the multilayer wafer can be optimized according to the circuit of the multilayer wafer, and the thickness of each layer of wafer film circuit is very low, so that the thickness of the wafer film circuit is increased even if the layer number is increased, the plane size is reduced very much, the size of the product is small, the standing wave loss is small, the working frequency band is wide, and the reliability is high; the manufacturing method is manufactured by using a manufacturing process of a semiconductor, the process precision is higher than that of screen printing, more precise circuit lines are conveniently designed and manufactured, the yield is higher, and the heat conductivity of the semiconductor material wafer of the thin film filter manufactured by the manufacturing method is higher, so that the heat dissipation problem of the filter is solved; according to the manufacturing method, the upper reinforced connecting layer 2 and the lower reinforced connecting layer 3 are sputtered on the upper surface and the lower surface of the wafer, so that the adhesion of the circuit is improved, and the bonding process is utilized, so that the supporting force is provided while the conductive connection is met, and the firm connection and the transverse connection between the single-layer wafer thin film circuits are ensured.
The air path system, the actuating devices such as the servo motor and the like, the gear transmission mechanism and the lead screw nut mechanism are all conventional technologies at present, specific structures and principles of the air cylinder, the motor and other transmission mechanisms and other designs are disclosed in detail in a mechanical design manual fifth edition printed in the fifth edition of Beijing in 4.2008, and belong to the prior art, the structures of the air path system are clear, a vacuum element, an air loop and program control are disclosed in detail in a modern practical pneumatic technology 3 rd edition SMC training teaching material published by a mechanical industry publisher in 08.01.2008, the air path structure in the embodiment is also the prior art, and the control and the travel switch of the motor are also introduced in detail in a motor driving and speed regulating book published by a chemical industry publisher in 2015 07.01.A circuit and an air path connection are clear. The above-mentioned embodiments are merely descriptions of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and alterations made to the technical solution of the present invention without departing from the spirit of the present invention are intended to fall within the scope of the present invention defined by the claims.
Claims (10)
1. A thin film filter comprising a substrate made of a semiconductor material, characterized in that: the number of the substrates is at least two, the substrates are vertically overlapped, an upper reinforcing connecting layer and a lower reinforcing connecting layer are respectively arranged on the upper surface and the lower surface of each substrate, an upper circuit and a lower circuit are arranged on the upper surface and the lower surface of each upper reinforcing connecting layer and each lower reinforcing connecting layer, at least one through hole is further arranged on each substrate, a metal conducting layer is coated on the inner wall of each through hole in a circle, and the upper end and the lower end of each metal conducting layer are higher than the through holes and are respectively in conductive connection with the upper circuit and the lower circuit of each substrate; the lower circuit of the substrate on the upper layer and the upper circuit of the substrate on the adjacent lower layer are respectively provided with a lower bonding bulge and an upper bonding bulge which are in one-to-one correspondence, the lower bonding bulge and the upper bonding bulge are bonded with each other to electrically connect the lower circuit of the substrate on the upper layer and the upper circuit of the substrate on the lower layer, and an independent bonding support structure is arranged between the adjacent surfaces of the substrates.
2. A thin film filter as claimed in claim 1, wherein: the bonding bearing structure comprises an upper supporting bulge and a lower supporting bulge which are made of metal, the upper supporting bulge is arranged between the gaps of the upper circuit of the lower substrate and isolated, the lower supporting bulge is arranged between the gaps of the lower circuit of the upper substrate and isolated, and the upper supporting bulge and the lower supporting bulge are connected in a bonding mode.
3. A thin film filter as claimed in claim 2, wherein: the lower bonding bulges and the upper bonding bulges are respectively arranged at the lower end and the upper end of the metal conducting layer, the positions of the through holes on each substrate are consistent, and the lower bonding bulges of the metal conducting layer on the substrate on the upper layer are bonded and connected with the upper bonding bulges of the metal conducting layer on the substrate on the lower layer.
4. A thin film filter as claimed in claim 2, wherein: the upper bonding bulge is arranged at the upper end of the metal conducting layer, the lower bonding bulge is arranged on the lower circuit, and the lower bonding bulge on the upper layer of the substrate is in bonding connection with the upper bonding bulge on the lower layer of the substrate.
5. A thin film filter as claimed in claim 2, wherein: the lower bonding bulge is arranged at the lower end of the metal conducting layer, the upper bonding bulge is arranged on the upper circuit, and the lower bonding bulge on the upper substrate is in bonding connection with the upper bonding bulge on the lower substrate.
6. A thin film filter as claimed in claim 2, wherein: the lower bonding bulge and the upper bonding bulge are respectively arranged on the lower circuit and the upper circuit, and the upper end and the lower end of the metal conducting layer respectively correspond to the gap between the upper circuit and the lower circuit.
7. A thin film filter as claimed in claim 2, wherein: the upper bonding bulge, the lower supporting bulge and the upper supporting bulge are consistent in height and are all 3 +/-0.5 mu m.
8. A method for manufacturing a thin film filter is characterized in that: the preparation method is used for preparing the thin film filter as claimed in any one of claims 1 to 7, and comprises three steps of manufacturing a single-layer wafer thin film circuit, bonding the wafer thin film circuit and cutting and scribing:
1. the manufacturing method of the single-layer wafer thin film circuit comprises the following steps:
s11, polishing, cleaning and drying two surfaces of the wafer;
s12, sputtering a Ti layer or a Tiw layer on the upper surface and the lower surface of the wafer in a magnetron sputtering mode to form an upper reinforced connecting layer and a lower reinforced connecting layer, wherein the thickness of the upper reinforced connecting layer and the thickness of the lower reinforced connecting layer are 50 +/-2 nm;
s13, respectively sputtering an upper metal layer and a lower metal layer on the outer surfaces of the upper reinforcing connecting layer and the lower reinforcing connecting layer in a magnetron sputtering mode, wherein the thicknesses of the upper metal layer and the lower metal layer are 3000 +/-50 nm;
s14, adopting a negative or positive photoetching mode to glue and make photoresist patterns on the outer surfaces of the upper metal layer and the lower metal layer;
s15, using the photoresist pattern for mask protection, adopting a wet etching process to completely remove the upper metal layer and the lower metal layer outside the photoresist pattern to form a plurality of circuit modules, forming an upper circuit, a lower circuit and a bonding support structure on the upper metal layer and the lower metal layer on each circuit module, and then removing the photoresist pattern on the surfaces of the upper metal layer and the lower metal layer;
s16, manufacturing a circular through hole on each circuit module on the wafer by utilizing a laser etching or deep silicon etching process, wherein the position of the through hole is located in a gap between the upper circuit and the lower circuit; the diameter of the through hole is 0.1-1mm, and the taper of the through hole is 83-88 degrees;
s17, protecting all areas except the through hole and the bonding point by adopting a negative photoresist in a photoetching mode, and exposing the through hole and the bonding point in a photoetching development mode;
s18, respectively sputtering the inner wall of the through hole and the bonding point by adopting the same method as the steps S12 and S13 to generate a metal conducting layer and a bonding layer, wherein the metal conducting layer electrically connects the upper circuit and the lower circuit; one part of the bonding layer is positioned on the upper circuit and the lower circuit of each circuit module and used as an upper bonding bulge and a lower bonding bulge, and the other part of the bonding layer is positioned on the bonding support structure and is convenient to support bonding;
s19, removing the photoresist in the step S17 to finish the manufacture of the single-layer wafer thin film circuit;
2. the bonding between the wafer thin film circuits comprises the following sub-steps:
s21, bonding wafer thin film circuits in pairs
Pairing the corresponding single-layer wafer thin film circuits, wherein the bonding layer positions of the two paired single-layer wafer thin film circuits are in one-to-one correspondence; bonding the wafers by using wafer bonding equipment, wherein the bonding temperature is 280 +/-10 ℃, the air pressure is 0.08-0.15Pa, the pressure is 18-22KN, and the bonding time is 2h; the upper bonding bulge and the lower bonding bulge after bonding are firmly connected;
s23, bonding of multilayer wafers
Pairing the wafer groups which are bonded in the step S21 again, wherein the bonding layer positions of the two paired single-layer wafer thin film circuits are in one-to-one correspondence; bonding is carried out by adopting the same bonding parameters as those in the step S21 to form a film wafer group with even layers;
3. dicing saw blade
And cutting the circuit module in the bonded wafer into a plurality of small devices by adopting a wafer abrasive wheel cutting machine to form the film filter.
9. A method of manufacturing a thin film filter as claimed in claim 8, wherein: in step S18, the upper bonding bumps and the lower bonding bumps are disposed at the upper end and the lower end of the metal conductive layer and are formed during the sputtering process of the metal conductive layer.
10. A method of manufacturing a thin film filter as claimed in claim 9, wherein: in the step S16, when the wafer is a silicon wafer, the circular through hole is made by deep silicon etching; when the wafer is made of aluminum nitride, the circular through hole is manufactured by adopting a laser etching process; in the step S15, the step of removing the photoresist patterns on the surfaces of the upper metal layer and the lower metal layer is moved to the step S16 after the circular through hole is formed.
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| CN202211114314.5A CN115473026A (en) | 2022-09-14 | 2022-09-14 | Thin film filter and manufacturing method thereof |
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| CN202211114314.5A CN115473026A (en) | 2022-09-14 | 2022-09-14 | Thin film filter and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115966865A (en) * | 2022-12-29 | 2023-04-14 | 中国电子科技集团公司第二十六研究所 | MEMS filter generating out-of-band zero point based on three-dimensional stacking and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115966865A (en) * | 2022-12-29 | 2023-04-14 | 中国电子科技集团公司第二十六研究所 | MEMS filter generating out-of-band zero point based on three-dimensional stacking and manufacturing method thereof |
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