CN115386973A - A method for preparing side-by-side heterojunction nanofibers by single-source double-field electrospinning - Google Patents
A method for preparing side-by-side heterojunction nanofibers by single-source double-field electrospinning Download PDFInfo
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- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims 1
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- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
- D01D5/00—Formation of filaments, threads, or the like
- D01D5/0007—Electro-spinning
- D01D5/0015—Electro-spinning characterised by the initial state of the material
- D01D5/003—Electro-spinning characterised by the initial state of the material the material being a polymer solution or dispersion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
- D01D5/00—Formation of filaments, threads, or the like
- D01D5/0007—Electro-spinning
- D01D5/0061—Electro-spinning characterised by the electro-spinning apparatus
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- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04H—MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
- D04H1/00—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres
- D04H1/40—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres from fleeces or layers composed of fibres without existing or potential cohesive properties
- D04H1/42—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres from fleeces or layers composed of fibres without existing or potential cohesive properties characterised by the use of certain kinds of fibres insofar as this use has no preponderant influence on the consolidation of the fleece
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- D04H1/00—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres
- D04H1/70—Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres characterised by the method of forming fleeces or layers, e.g. reorientation of fibres
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Abstract
Description
技术领域technical field
本发明涉及一维纳米材料的制备技术领域,尤其涉及一种单源双场静电纺丝制备并排异质结纳米纤维的方法。The invention relates to the technical field of preparation of one-dimensional nanomaterials, in particular to a method for preparing side-by-side heterojunction nanofibers by single-source double-field electrospinning.
背景技术Background technique
一维纳米材料(纳米纤维、纳米带、纳米管、纳米棒以及各种一维纳米结构阵列)因为其具有比表面积大、结晶度高、缺陷水平低、尺寸容易控制以及小尺寸和表面效应等优点而受到了广泛地关注。金属氧化物半导体(MOS)材料具有带隙可调谐、容易制备、成本低和易于掺杂、修饰等优点。一维纳米MOS材料由于兼具了二者的优势,在气敏传感器、光电探测器、超级电容器以及离子电池等研究领域得到了广泛地应用,同时,其大比表面积为目标物质在纳米材料表面的吸附和反应提供了大量的活性位点,有效地提高了吸附和反应的效率。此外,由一维纳米MOS材料交织成的无纺二维片状结构具有一定的机械柔韧性和机械强度,可应用于柔性可穿戴电子器件。One-dimensional nanomaterials (nanofibers, nanobelts, nanotubes, nanorods, and various one-dimensional nanostructure arrays) have large specific surface area, high crystallinity, low defect level, easy size control, small size and surface effects, etc. advantages have received extensive attention. Metal-oxide-semiconductor (MOS) materials have the advantages of tunable bandgap, easy preparation, low cost, and easy doping and modification. One-dimensional nano-MOS materials have been widely used in research fields such as gas sensors, photodetectors, supercapacitors, and ion batteries due to the advantages of both. The adsorption and reaction provides a large number of active sites, effectively improving the efficiency of adsorption and reaction. In addition, the nonwoven two-dimensional sheet structure interwoven by one-dimensional nano-MOS materials has certain mechanical flexibility and mechanical strength, which can be applied to flexible wearable electronic devices.
虽然一维纳米MOS材料具备了上述优势,但是在很多应用领域,由于材料本身的特性,单一MOS材料很难同时满足各种性能指标的要求,会在某些性能上存在一定缺陷。因此很多研究采用将两种MOS材料复合形成异质结构的策略来弥补性能缺陷,提升材料的综合性能。异质结构的形成可以使电子由高能态转移到未被占据的低能态,使电子和空穴分离,有效地抑制了电子空穴对的复合,延长了载流子的寿命。同时,两种各具优势的MOS材料的组合可以使复合材料同时具备二者的优势,从而有效地提升器件的综合性能。Although one-dimensional nano-MOS materials have the above-mentioned advantages, in many application fields, due to the characteristics of the material itself, it is difficult for a single MOS material to meet the requirements of various performance indicators at the same time, and there will be certain defects in some performances. Therefore, many studies have used the strategy of combining two MOS materials to form a heterogeneous structure to make up for performance defects and improve the overall performance of the material. The formation of the heterostructure can transfer electrons from high-energy states to unoccupied low-energy states, separate electrons from holes, effectively inhibit the recombination of electron-hole pairs, and prolong the lifetime of carriers. At the same time, the combination of two MOS materials with their own advantages can make the composite material have the advantages of both, thus effectively improving the overall performance of the device.
目前,MOS基异质结纳米纤维材料的制备方法主要有:⑴采用静电纺丝法、分子技术制备法等方法制备单一的MOS纳米纤维,然后采用水热法、溶剂热法和化学气相沉积法等方法对制备的MOS纳米纤维前体进行后处理,在前体纤维的表面修饰另一种MOS材料来制备异质结构;⑵配制同时含有两种或多种前体金属盐的前驱体溶液,然后采用静电纺丝法制备异质结纳米纤维;⑶分别制备两种MOS材料的前驱体溶液,采用同轴静电纺丝的方法制备一种材料包覆另一种材料的核壳纳米纤维;⑷分别制备两种MOS材料的前驱体溶液,采用双电源双电极纺丝技术制备并排纳米纤维。但上述方法依然存在以下几个问题:i)对制备的纳米纤维单丝进行后处理,只能将尺寸微小的颗粒等修饰到纤维表面,难以形成大面积的异质结构。而过大密度的颗粒修饰,又会导致纤维被颗粒包覆住,从而阻碍了纤维材料的暴露,降低了活性位点的数量,对性能的提升产生负面的影响。ii)使用含有不同材料前体金属盐的纺丝液通过静电纺丝法制备的异质结材料中,单根纳米纤维中同时存在多种MOS材料的晶粒。不同种半导体材料由于能级结构的不同,会在晶界处形成势垒,引起半导体材料能带的弯曲,阻碍电子在不同种材料晶粒间的传输。iii)同轴静电纺丝法制备的核壳异质结构,虽然两种材料产生了大面积的结合,但核层材料被壳层材料完全包覆或大部分包覆,壳层材料阻碍了核层材料的暴露,使核层材料表面的活性位点无法暴露出来进而与靶向物质发生反应,从而影响了性能的进一步提升。iv)双电源双电极纺丝技术需要两个电源设备同时工作,增加了制备过程的耗能。At present, the preparation methods of MOS-based heterojunction nanofiber materials mainly include: (1) Single MOS nanofibers are prepared by electrospinning method, molecular technology preparation method, etc., and then hydrothermal method, solvothermal method and chemical vapor deposition method are used. and other methods to post-treat the prepared MOS nanofiber precursor, and modify another MOS material on the surface of the precursor fiber to prepare a heterogeneous structure; (2) prepare a precursor solution containing two or more precursor metal salts at the same time, Then, the electrospinning method was used to prepare heterojunction nanofibers; (3) the precursor solutions of two MOS materials were prepared respectively, and the core-shell nanofibers coated with one material and another material were prepared by coaxial electrospinning; (4) Precursor solutions of two MOS materials were prepared respectively, and side-by-side nanofibers were prepared by double-power and double-electrode spinning technology. However, the above method still has the following problems: i) post-processing the prepared nanofiber monofilament can only modify the surface of the fiber with tiny particles, and it is difficult to form a large-area heterogeneous structure. However, excessive density of particle modification will cause the fiber to be covered by particles, which hinders the exposure of the fiber material, reduces the number of active sites, and has a negative impact on the improvement of performance. ii) In the heterojunction materials prepared by electrospinning using spinning solutions containing different material precursor metal salts, grains of multiple MOS materials co-exist in a single nanofiber. Due to the different energy level structures of different semiconductor materials, potential barriers will be formed at the grain boundaries, which will cause the bending of the energy band of the semiconductor material and hinder the transmission of electrons between the grains of different materials. iii) The core-shell heterostructure prepared by the coaxial electrospinning method, although the two materials produced a large area of bonding, the core layer material was completely or mostly covered by the shell material, which hindered the core The exposure of the layer material prevents the active sites on the surface of the core layer material from being exposed and then reacts with the target substance, thereby affecting the further improvement of the performance. iv) Dual-power dual-electrode spinning technology requires two power devices to work at the same time, which increases the energy consumption of the preparation process.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种简单、可规模化的单源双场静电纺丝制备并排异质结纳米纤维的方法。The technical problem to be solved by the present invention is to provide a simple and scalable single-source double-field electrospinning method for preparing side-by-side heterojunction nanofibers.
为解决上述问题,本发明所述的一种单源双场静电纺丝制备并排异质结纳米纤维的方法,其特征在于:该方法是指首先分别配制含有五水合硝酸铟(InN3O9·5H2O)/聚乙烯吡咯烷酮(PVP)的前驱体溶液Ⅰ、含有二水合氯化亚锡(SnCl2·2H2O)/聚乙烯吡咯烷酮(PVP)的前驱体溶液Ⅱ;然后将前驱体溶液Ⅰ和前驱体溶液Ⅱ分别注入到单源双场静电纺丝装置中平行放置的玻璃注射器Ⅰ和玻璃注射器Ⅱ中,调节直流高压电源的电压进行纺丝,并使针头Ⅰ、针头Ⅱ喷射出的泰勒锥纠缠在一起,在不锈钢收集板上获得纳米纤维膜;最后,所述纳米纤维膜经退火处理,即得SnO2/In2O3并排异质结纳米纤维材料。In order to solve the above problems, a method for preparing side-by-side heterojunction nanofibers by single- source double-field electrospinning according to the present invention is characterized in that: the method refers to firstly preparing ·5H 2 O)/polyvinylpyrrolidone (PVP) precursor solution Ⅰ, containing dihydrate stannous chloride (SnCl 2 ·2H 2 O)/polyvinylpyrrolidone (PVP) precursor solution II; then the precursor Solution Ⅰ and precursor solution Ⅱ were respectively injected into the glass syringe Ⅰ and glass syringe Ⅱ placed in parallel in the single-source double-field electrospinning device, and the voltage of the DC high-voltage power supply was adjusted for spinning, and the needles Ⅰ and Ⅱ were ejected The Taylor cones of the SnO 2 /In 2 O 3 side-by-side heterojunction nanofibrous material are obtained by entanglement to obtain a nanofiber film on a stainless steel collecting plate; finally, the nanofiber film is annealed.
所述聚乙烯吡咯烷酮的重均分子量为1300000。The weight average molecular weight of the polyvinylpyrrolidone is 1,300,000.
所述前驱体溶液Ⅰ是指先将1.5 mmol(0.5864g)InN3O9·5H2O溶于5 ml无水乙醇中,搅拌均匀所得的溶液A;然后将0.75 g PVP粉末溶于5 ml N,N-二甲基甲酰胺溶液中,搅拌均匀所得的溶液B;最后,将所述溶液A与所述溶液B混合后搅拌12 h即得。The precursor solution I refers to the solution A obtained by dissolving 1.5 mmol (0.5864g) InN 3 O 9 5H 2 O in 5 ml of absolute ethanol and stirring evenly; then dissolving 0.75 g of PVP powder in 5 ml of N , in the N-dimethylformamide solution, stir the obtained solution B; finally, mix the solution A and the solution B and stir for 12 h to obtain.
所述前驱体溶液Ⅱ是指先将0.15 mmol(0.0338g)SnCl2·2H2O溶于5 ml无水乙醇中,搅拌均匀所得的溶液C;然后将0.75 g PVP粉末溶于5 ml N,N-二甲基甲酰胺溶液中,搅拌均匀所得的溶液D;最后,将所述溶液C与所述溶液D混合后搅拌12 h即得。The precursor solution II refers to the solution C obtained by dissolving 0.15 mmol (0.0338g) SnCl 2 ·2H 2 O in 5 ml of absolute ethanol and stirring evenly; then dissolving 0.75 g of PVP powder in 5 ml of N,N - In the dimethylformamide solution, stir the obtained solution D; finally, mix the solution C and the solution D, and stir for 12 h to obtain.
所述单源双场静电纺丝装置包括直流高压电源、不锈钢收集板和两个铁架台;两个所述铁架台相对放置,且其中一个所述铁架台上固定有带针头Ⅰ的玻璃注射器Ⅰ,另一个所述铁架台上固定有带针头Ⅱ的玻璃注射器Ⅱ;所述针头Ⅰ通过导线Ⅰ与所述直流高压电源的正极相连;所述针头Ⅱ通过导线Ⅲ进行接地处理;两个所述铁架台之间设有所述不锈钢收集板,该不锈钢收集板通过导线Ⅱ与所述直流高压电源的负极相连。The single-source double-field electrospinning device includes a DC high-voltage power supply, a stainless steel collecting plate, and two iron stands; the two iron stands are placed opposite each other, and a glass syringe I with a needle I is fixed on one of the iron stands A glass syringe II with a needle II is fixed on the other iron stand; the needle I is connected to the positive pole of the DC high-voltage power supply through a wire I; the needle II is grounded through a wire III; The stainless steel collecting plate is arranged between the iron frames, and the stainless steel collecting plate is connected to the negative pole of the DC high voltage power supply through the wire II.
所述玻璃注射器Ⅰ和所述玻璃注射器Ⅱ均垂直于所述不锈钢收集板。Both the glass syringe I and the glass syringe II were perpendicular to the stainless steel collecting plate.
所述直流高压电源的电压为8~14 kV。The voltage of the DC high-voltage power supply is 8-14 kV.
所述针头Ⅰ与所述针头Ⅱ之间的距离为3~ 5 cm。The distance between the needle I and the needle II is 3-5 cm.
所述针头Ⅰ、所述针头Ⅱ分别与所述不锈钢收集板之间的距离均为10~15 cm。The distances between the needle I and the needle II and the stainless steel collecting plate are both 10-15 cm.
所述退火处理的条件是指采用管式炉,在空气气氛中退火,升温至300 ℃,保温60min,再升温至500 ℃,保温120 min后随炉冷却至室温。The conditions for the annealing treatment refer to using a tube furnace, annealing in an air atmosphere, raising the temperature to 300°C, holding it for 60 minutes, then raising the temperature to 500°C, holding it for 120 minutes, and cooling to room temperature with the furnace.
本发明与现有技术相比具有以下优点:Compared with the prior art, the present invention has the following advantages:
1、本发明利用单源双场静电纺丝装置,通过一个直流高压电源,在两个针头之间、两针头与收集板之间分别构建一个电场,使得两种不同MOS纳米纤维在双电场的共同作用下,通过静电吸附力吸附在一起,形成了长程、大面积的异质结构,从而有效地发挥异质结在器件工作过程中的积极作用。1. The present invention utilizes a single-source double-field electrospinning device to construct an electric field between two needles and between two needles and a collecting plate through a DC high-voltage power supply, so that two different MOS nanofibers are in the dual electric field. Under the combined action, they are adsorbed together by electrostatic adsorption force to form a long-range and large-area heterostructure, thus effectively exerting the positive role of the heterojunction in the working process of the device.
2、本发明构建的并排异质结构中,两种MOS纳米纤维呈肩并肩的形态结合。除两种材料的结合界面外,两种材料的绝大部分表面都暴露在外,使更多的表面活性位点得以参与反应。同时这种并排异质结构有效地避免了两种不同材料互相包覆所带来的活性位点数量上的损失。2. In the side-by-side heterostructure constructed in the present invention, two kinds of MOS nanofibers are combined side by side. Except for the bonding interface of the two materials, most of the surfaces of the two materials are exposed, allowing more surface active sites to participate in the reaction. At the same time, this side-by-side heterostructure effectively avoids the loss of the number of active sites caused by mutual coating of two different materials.
3、本发明中单源双场静电纺丝装置结构简单,操作方便,易于大规模推广和应用。3. The single-source double-field electrospinning device in the present invention has simple structure, convenient operation, and easy large-scale popularization and application.
4、采用本发明方法,静电纺丝过程中出丝状态稳定,纺丝效果好。同时本发明构建的并排异质结材料不是将两种材料简单的糅合在一起,而是使两种材料都保持了纳米纤维的微观结构,即保留了两种材料一维纳米结构的优势。同时,在单根纳米纤维中,只存在某一种MOS材料的晶粒,没有形成不同种晶粒间的势垒,有效地保证了载流子传输通道的完整性。4. By adopting the method of the present invention, the state of filament output during the electrospinning process is stable, and the spinning effect is good. At the same time, the side-by-side heterojunction material constructed by the present invention does not simply blend the two materials together, but makes the two materials maintain the microstructure of nanofibers, that is, retains the advantages of the one-dimensional nanostructure of the two materials. At the same time, in a single nanofiber, there are only crystal grains of a certain kind of MOS material, and no potential barrier between different kinds of grains is formed, which effectively ensures the integrity of the carrier transport channel.
5、本发明利用单源双场静电纺丝装置,一步制得了SnO2/In2O3异质结纳米纤维材料,可适用于NiO、ZnO等MOS材料的任意组合的异质结纳米纤维的制备,方法简单且适用于大批量生产。5. The present invention utilizes a single-source double-field electrospinning device to prepare a SnO 2 /In 2 O 3 heterojunction nanofiber material in one step, which can be applied to any combination of NiO, ZnO and other MOS materials. The preparation method is simple and suitable for mass production.
附图说明Description of drawings
下面结合附图对本发明的具体实施方式作进一步详细的说明。The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
图1为本发明的单源双场静电纺丝装置的示意图。Fig. 1 is a schematic diagram of a single-source double-field electrospinning device of the present invention.
图中:1—直流高压电源;2—玻璃注射器Ⅰ;3—玻璃注射器Ⅱ;4—针头Ⅰ;5—针头Ⅱ;6—铁架台;7—不锈钢收集板;8—导线Ⅰ;9—导线Ⅱ;10—导线Ⅲ。In the figure: 1—DC high-voltage power supply; 2—glass syringe Ⅰ; 3—glass syringe Ⅱ; 4—needle Ⅰ; 5—needle II; 6—iron stand; 7—stainless steel collecting plate; II; 10—wire III.
图2为本发明不同d1距离(针头Ⅰ与针头Ⅱ之间距离)和不同d2距离(针头Ⅰ与不锈钢收集板之间距离)下可以稳定纺丝的直流电压值。Figure 2 shows the DC voltage values for stable spinning under different d1 distances (the distance between the needle head I and the needle head II) and different d2 distances (the distance between the needle head I and the stainless steel collecting plate) of the present invention.
图3为本发明在d2 = 15 cm条件下,不同d1时针头Ⅰ与针头Ⅱ的稳定喷丝状态图:(a) 3 cm,(b) 4 cm和 (c) 5 cm。Figure 3 is a diagram of the stable spinning state of needle I and needle II at different d 1 under the condition of d 2 = 15 cm according to the present invention: (a) 3 cm, (b) 4 cm and (c) 5 cm.
图4为本发明在d2 = 15 cm条件下,不同d1时制备的SnO2/In2O3并排异质结纳米纤维((a) 3 cm,(b) 4 cm和 (c) 5 cm)以及氧化铟纳米纤维(d)的SEM图片。Figure 4 shows the SnO 2 /In 2 O 3 side-by-side heterojunction nanofibers ((a) 3 cm, (b) 4 cm and (c) 5 cm prepared under the condition of d 2 = 15 cm and different d 1 cm) and SEM images of indium oxide nanofibers (d).
图5为本发明制备的SnO2/In2O3异质结构纳米纤维的XRD图。Fig. 5 is an XRD pattern of SnO 2 /In 2 O 3 heterostructure nanofibers prepared in the present invention.
具体实施方式Detailed ways
一种单源双场静电纺丝制备并排异质结纳米纤维的方法:该方法是指首先分别配制含有五水合硝酸铟(InN3O9·5H2O)/聚乙烯吡咯烷酮(PVP)的前驱体溶液Ⅰ、含有二水合氯化亚锡(SnCl2·2H2O)/聚乙烯吡咯烷酮(PVP)的前驱体溶液Ⅱ;然后将前驱体溶液Ⅰ和前驱体溶液Ⅱ分别注入到单源双场静电纺丝装置中平行放置的玻璃注射器Ⅰ2和玻璃注射器Ⅱ3中,调节直流高压电源1的电压为8~14 kV进行纺丝,并使针头Ⅰ4、针头Ⅱ5喷射出的泰勒锥纠缠在一起,在不锈钢收集板7上获得纳米纤维膜;最后,纳米纤维膜采用管式炉,在空气气氛中退火,升温至300 ℃,保温60 min,再升温至500 ℃,保温120 min后随炉冷却至室温,即得SnO2/In2O3并排异质结纳米纤维材料。A method for preparing side-by-side heterojunction nanofibers by single-source double-field electrospinning: the method refers to the preparation of precursors containing indium nitrate pentahydrate (InN 3 O 9 5H 2 O)/polyvinylpyrrolidone (PVP) respectively Precursor solution I, precursor solution II containing stannous chloride dihydrate (SnCl 2 2H 2 O)/polyvinylpyrrolidone (PVP); In the glass syringe Ⅰ2 and glass syringe Ⅱ3 placed in parallel in the electrospinning device, the voltage of the DC high-voltage power supply 1 was adjusted to 8-14 kV for spinning, and the Taylor cones ejected from the needles Ⅰ4 and Ⅱ5 were entangled together. The nanofiber membrane was obtained on the stainless
其中:聚乙烯吡咯烷酮的重均分子量为1300000。Wherein: the weight average molecular weight of polyvinylpyrrolidone is 1,300,000.
前驱体溶液Ⅰ是指先将1.5 mmol(0.5864g) InN3O9·5H2O溶于5 ml无水乙醇中,搅拌均匀所得的溶液A;然后将0.75 g PVP粉末溶于5 ml N,N-二甲基甲酰胺溶液中,搅拌均匀所得的溶液B;最后,将溶液A与溶液B混合后搅拌12 h即得无色透明的澄清液。Precursor solution I refers to the solution A obtained by dissolving 1.5 mmol (0.5864g) InN 3 O 9 5H 2 O in 5 ml of absolute ethanol and stirring evenly; then dissolving 0.75 g of PVP powder in 5 ml of N,N - In the dimethylformamide solution, stir the obtained solution B; finally, mix solution A and solution B and stir for 12 h to obtain a colorless and transparent clear solution.
前驱体溶液Ⅱ是指先将0.15 mmol(0.0338g)SnCl2·2H2O溶于5 ml无水乙醇中,搅拌均匀所得的溶液C;然后将0.75 g PVP粉末溶于5 ml N,N-二甲基甲酰胺溶液中,搅拌均匀所得的溶液D;最后,将溶液C与溶液D混合后搅拌12 h即得无色透明的澄清液。Precursor solution II refers to solution C obtained by first dissolving 0.15 mmol (0.0338g) SnCl 2 ·2H 2 O in 5 ml of absolute ethanol and stirring evenly; then dissolving 0.75 g of PVP powder in 5 ml of N,N-di In the methylformamide solution, stir the obtained solution D; finally, mix the solution C and solution D and stir for 12 h to obtain a colorless and transparent clear solution.
如图1所示,单源双场静电纺丝装置包括直流高压电源1、不锈钢收集板7和两个铁架台6。两个铁架台6相对放置,且其中一个铁架台6上固定有带针头Ⅰ4的玻璃注射器Ⅰ2,另一个铁架台6上固定有带针头Ⅱ5的玻璃注射器Ⅱ3;针头Ⅰ4通过导线Ⅰ8与直流高压电源1的正极相连;针头Ⅱ5通过导线Ⅲ10进行接地处理;两个铁架台6之间设有不锈钢收集板7,该不锈钢收集板7通过导线Ⅱ9与直流高压电源1的负极相连。玻璃注射器Ⅰ2和玻璃注射器Ⅱ3均垂直于不锈钢收集板7。针头Ⅰ4与针头Ⅱ5之间的距离为3~ 5 cm;针头Ⅰ4、针头Ⅱ5分别与不锈钢收集板7之间的距离均为10~15 cm。As shown in FIG. 1 , the single-source double-field electrospinning device includes a DC high-voltage power supply 1 , a stainless
【工作原理】使用单一直流高压电源1,在针头Ⅰ4与不锈钢收集板7之间、针头Ⅰ4和针头Ⅱ5之间分别构建两个电场。不锈钢收集板7接电源负极并置于针头Ⅰ4、针头Ⅱ5中间的正下方。当电路接通后,在双电场的作用下,针头Ⅰ4、针头Ⅱ5能同时进行喷丝,所喷出的两种纳米纤维丝由于静电作用吸附在一起构成肩并肩并排排列的异质结纳米纤维,并在重力和电场作用下一起沉积在不锈钢收集板7上。这种方式构建了长程、大面积的异质结构且两种材料没有互相包覆,同时保持了一维纳米材料的微观形貌,保持了导电通道的完整性。[Working principle] Using a single DC high-voltage power supply 1, two electric fields are respectively constructed between the needle head I4 and the stainless
实施例1 一种单源双场静电纺丝制备并排异质结纳米纤维的方法:Example 1 A method for preparing side-by-side heterojunction nanofibers by single-source double-field electrospinning:
将前驱体溶液Ⅰ注入单源双场静电纺丝装置中的玻璃注射器Ⅰ2中,将前驱体溶液Ⅱ注入装置的玻璃注射器Ⅱ3中。针头Ⅰ4通过导线Ⅰ8与直流高压电源1的正极相连;将针头Ⅱ5通过导线Ⅲ10进行接地处理;不锈钢收集板7通过导线Ⅱ9与直流高压电源1的负极相连。The precursor solution I was injected into the glass syringe I2 in the single-source double-field electrospinning device, and the precursor solution II was injected into the glass syringe II3 of the device. The needle I4 is connected to the positive pole of the DC high voltage power supply 1 through the wire I8; the needle II5 is grounded through the wire III10; the stainless
在3~5 cm的范围内调节d1,在10~15 cm的范围内调节d2,调节直流高压电源1的电压值,使纺丝装置的针头Ⅰ4和针头Ⅱ5均有丝喷出,且达到稳定的纺丝状态(图2)。同时,两针头喷射出的泰勒锥在纺丝装置中两个针头间的电场作用下纠缠在一起,带正电的含有InN3O9·5H2O的纳米纤维与表面产生了感应负电荷的含有SnCl2·2H2O的纳米纤维相互吸引,形成并排的异质结构材料(图3)。在确定的d1和d2值下,低于或高于稳定纺丝电压均难以达到稳定的泰勒锥纠缠状态。该材料在针头与不锈钢收集板7间的电场以及重力作用下落到不锈钢收集板7上,获得纳米纤维膜。Adjust d 1 within the range of 3-5 cm, adjust d 2 within the range of 10-15 cm, adjust the voltage value of the DC high-voltage power supply 1, so that both the needles I4 and II5 of the spinning device have silk ejected, and A stable spinning state is reached (Figure 2). At the same time, the Taylor cones ejected from the two needles are entangled together under the action of the electric field between the two needles in the spinning device, and the positively charged nanofibers containing InN 3 O 9 5H 2 O generate an induced negative charge on the surface. Nanofibers containing SnCl 2 2H 2 O attract each other to form a side-by-side heterostructure material (Fig. 3). Under certain d 1 and d 2 values, it is difficult to reach a stable Taylor cone entanglement state below or above the stable spinning voltage. The material falls onto the stainless
将获得的纳米纤维膜用镊子取下来,在管式炉中进行退火处理。退火升温程序为:升温速率2 ℃min-1,升温至300 ℃,保温60 min,然后再以2 ℃min-1的升温速率升温至500℃,保温120 min后随炉冷却至室温,即获得SnO2/In2O3异质结纳米纤维(图4)。The obtained nanofibrous membrane was removed with tweezers and annealed in a tube furnace. The annealing heating program is as follows: the heating rate is 2 ℃min -1 , the temperature is raised to 300 ℃, and the temperature is kept for 60 minutes, and then the temperature is raised to 500℃ at a heating rate of 2 ℃min -1 , and the temperature is kept for 120 minutes, and then cooled to room temperature with the furnace, and the obtained SnO 2 /In 2 O 3 heterojunction nanofibers (Fig. 4).
由于前驱体溶液Ⅰ和前驱体溶液Ⅱ中的In和Sn原子比为10 : 1,所以获得的SnO2纳米纤维的直径要小于In2O3纳米纤维的直径。SnO2纳米纤维纠缠在In2O3纳米纤维上,形成了SnO2/In2O3异质结构(图4)。Since the atomic ratio of In and Sn in precursor solution I and precursor solution II is 10:1, the diameter of obtained SnO 2 nanofibers is smaller than that of In 2 O 3 nanofibers. The SnO 2 nanofibers are entangled on the In 2 O 3 nanofibers, forming a SnO 2 /In 2 O 3 heterostructure (Fig. 4).
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