CN115360295A - Three-dimensional magnetic sensor based on cuboid silicon-based through hole and manufacturing method thereof - Google Patents
Three-dimensional magnetic sensor based on cuboid silicon-based through hole and manufacturing method thereof Download PDFInfo
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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Abstract
The application relates to the field of magnetic sensors, and provides a three-dimensional magnetic sensor based on a cuboid silicon-based through hole and a manufacturing method thereof. The three-dimensional magnetic sensor based on the cuboid silicon substrate through hole comprises a cuboid silicon substrate and three thin film magneto-resistive units, wherein the three thin film magneto-resistive units are respectively formed on the surfaces of three adjacent surfaces of the cuboid silicon substrate, the three thin film magneto-resistive units are mutually connected through silicon through hole leads in the cuboid silicon substrate, and the silicon through hole leads vertically extend from the three adjacent surfaces of the cuboid silicon substrate to the interior of the cuboid silicon substrate to be communicated; the three thin film magnetic resistance units are all provided with metal electrodes, and the silicon through hole conducting wires and the metal electrodes of the three thin film magnetic resistance units are integrated. This application realizes the electrical interconnection of three film magnetic resistance unit through the through-silicon via wire, and the integrated level is high, the good reliability, and make full use of vertical space realizes the integration of high density three-dimensional magnetic sensor simultaneously, small, low power dissipation.
Description
Technical Field
The application relates to the field of magnetic sensors, in particular to a three-dimensional magnetic sensor based on a cuboid silicon-based through hole and a manufacturing method of the three-dimensional magnetic sensor based on the cuboid silicon-based through hole.
Background
The magnetic sensor can sense the change of physical quantity related to magnetic phenomenon, and convert the change into an electric signal for detection, thereby directly or indirectly detecting physical information such as magnetic field size, direction, displacement, angle, current and the like. The traditional magnetic sensor is a current device based on the Hall effect, has the defects of large volume, high power consumption, low sensitivity, small measurement range and the like, and the application range is limited by the defects of the principle and the manufacturing technology.
The AMR (anisotropic Magnetoresistance) magnetoresistive effect refers to a phenomenon in which the resistivity of a ferromagnetic material changes with the change of the self magnetization and the included angle of the current direction. In the AMR magnetic sensor, the magnetic resistance rate of the device is proportional to the square of the cosine of an included angle between the magnetization direction of the magnetic material and the current direction, and the magnetic resistance extreme value and the external magnetic field have a corresponding relation, so the AMR magnetic sensor can be used for measuring the size of the external magnetic field. Compared with a sensor based on a Hall effect, the AMR magnetic sensor has the advantages of high sensitivity, small size, low power consumption, high reliability and the like, and is widely applied.
The existing AMR magnetic sensor is a multilayer thin film structure and is limited by the characteristics of structure and material, the magnetization direction of the thin film material is generally parallel to the substrate plane (X-Y), so the sensing direction is generally parallel to the substrate plane, and generally, the sensor can only effectively detect a magnetic field in the plane, and the sensing in the Z-axis direction is difficult to realize.
Disclosure of Invention
In order to solve one of the technical defects, the embodiment of the application provides a three-dimensional magnetic sensor based on a cuboid silicon-based through hole and a manufacturing method thereof.
According to a first aspect of the embodiments of the present application, there is provided a three-dimensional magnetic sensor based on a rectangular silicon-based through hole, including a rectangular silicon substrate and three thin film magneto-resistive units; the three thin film magneto-resistive units are respectively formed on the surfaces of three adjacent surfaces of the cuboid silicon substrate; the three thin film magneto-resistive units are mutually connected through silicon through hole leads inside the cuboid silicon substrate, and the silicon through hole leads vertically extend from three adjacent surfaces of the cuboid silicon substrate to the inside of the cuboid silicon substrate to be communicated; the three thin film magnetic resistance units are all provided with metal electrodes, and the silicon through hole conducting wires and the metal electrodes of the three thin film magnetic resistance units are integrated.
In the embodiment of the application, the three thin film magneto-resistive units are all close to the common vertex of the three adjacent surfaces of the cuboid silicon substrate.
In the embodiment of the application, the thin film magnetic resistance unit is a magnetic sensitive thin film layer based on an AMR anisotropic magnetic resistance effect.
In an embodiment of the present application, the thin film magneto-resistive element includes a wheatstone bridge structure.
In the embodiment of the present application, the wheatstone bridge structure includes four resistor units, and every two resistor units are connected through a metal electrode.
In the embodiment of the application, each resistance unit comprises a plurality of magnetoresistive strips, and the plurality of magnetoresistive strips are sequentially connected through a metal strip.
In the embodiment of the application, two ends of the magnetic resistance strip are arranged in a 60-degree sharp angle shape.
In the embodiment of the present application, the metal electrode and the metal strip are composed of a non-magnetic metal material.
In the embodiment of the present application, the through silicon via conductive line is formed by: etching silicon through hole openings on metal electrodes of the three thin film magneto-resistive units, vertically punching holes into the cuboid silicon substrate along the silicon through hole openings, and forming through silicon through holes in the cuboid silicon substrate; and filling a metal material in the silicon through hole to form a silicon through hole lead which is connected with the metal electrode of the film magneto-resistance unit into a whole.
According to a second aspect of the embodiments of the present application, there is provided a method for manufacturing a three-dimensional magnetic sensor based on a rectangular silicon-based through hole, including:
growing magnetic materials on the surfaces of three adjacent surfaces of the cuboid silicon substrate to form three thin film magneto-resistive units with metal electrodes;
and forming a silicon through hole lead which is connected with the metal electrodes of the three film magnetic resistance units into a whole in the cuboid silicon substrate by adopting a silicon through hole process.
In this application embodiment, adopt through-silicon-via process inside the formation of cuboid silicon substrate and the metal electrode of three film magnetic resistance unit be connected through-silicon-via wire as an organic whole, include:
etching the metal electrode of the film magnetic resistance unit to form a silicon through hole opening;
deeply etching the cuboid silicon substrate along the silicon through hole openings on the metal electrodes of the three thin film magneto-resistive units respectively until through silicon through holes are formed in the cuboid silicon substrate;
and filling a metal material in the silicon through hole to form a silicon through hole lead which is connected with the metal electrode of the film magneto-resistance unit into a whole.
In an embodiment of the present application, filling a metal material in a through silicon via to form a through silicon via wire integrally connected to a metal electrode of a thin film magnetoresistive unit includes:
sequentially growing an insulating medium layer, a metal diffusion barrier layer and a seed layer on the inner wall of the silicon through hole;
filling a conductive metal material in the through silicon via by adopting an electroplating or sputtering process;
and carrying out surface planarization treatment on the filled silicon through hole to form a silicon through hole conducting wire.
In an embodiment of the present application, the conductive metal material filled in the through silicon via is copper or tungsten.
The three-dimensional magnetic sensor based on cuboid silica-based through hole that provides in the embodiment of the application forms thin film magnetic resistance unit at the three looks adjacent surface of cuboid silicon substrate, through the inside metal electrode that forms and three thin film magnetic resistance unit in cuboid silicon substrate through silicon via technology and be connected silicon via wire as an organic whole, realizes the electrical interconnection of three thin film magnetic resistance unit through silicon via wire, and the integrated level is high, the good reliability. The detection of X, Y and Z three-dimensional magnetic fields is realized through the magneto-resistance units on the three surfaces based on the three vertical surfaces of the cuboid silicon substrate, and the sensitivity is high; meanwhile, the integration of the high-density three-dimensional magnetic sensor is realized by fully utilizing the vertical space, and the magnetic sensor is small in size and low in power consumption.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic structural diagram of a three-dimensional magnetic sensor based on a rectangular silicon-based through hole provided in an embodiment of the present application;
FIG. 2 is a schematic diagram of a Wheatstone bridge structure of a thin film magnetoresistive unit according to an embodiment of the present application;
fig. 3 is a flowchart of a manufacturing method of a three-dimensional magnetic sensor based on a rectangular through silicon via according to an embodiment of the present application.
Description of the reference numerals
10-a cuboid silicon substrate, 20-a thin film magneto-resistive unit, 21-a metal electrode, 22-a magneto-resistive strip,
23-metal strap, 24-through silicon via wire.
Detailed Description
In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the following description of the exemplary embodiments of the present application with reference to the accompanying drawings is made in further detail, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and are not exhaustive of all the embodiments. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that the product of the application is conventionally placed in use, and are used only for convenience of describing the present application and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically connected, electrically connected or can communicate with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The existing AMR magnetic sensor is a multilayer film structure, under the action of a magnetic field parallel to a film plane, the magnetization direction of at least one layer of magnetic film in the AMR magnetic multilayer film structure changes along with the size of the magnetic field, and the magnetic resistance rate of the magnetic sensor is in direct proportion to the square of the cosine of the included angle between the magnetization direction of a magnetic material and a current direction. Since the demagnetizing field perpendicular to the film plane is several orders of magnitude larger than the in-plane demagnetizing field in the magnetic thin film material, the magnetization direction of the thin film material is generally parallel to the substrate plane (X-Y), the sensing direction is also generally parallel to the substrate plane, only the magnetic field components in the plane direction (X-axis and Y-axis) can be detected, and the magnitude of the magnetic field in the Z-axis direction is difficult to detect.
In order to solve the above problem, an embodiment of the present application provides a three-dimensional magnetic sensor based on a cuboid silicon-based through hole, including a cuboid silicon substrate and three thin film magnetoresistive units, where the three thin film magnetoresistive units are formed on surfaces of three adjacent surfaces of the cuboid silicon substrate respectively. The three thin film magneto-resistive units are mutually connected through silicon through hole leads in the cuboid silicon substrate, and the silicon through hole leads vertically extend from three adjacent surfaces of the cuboid silicon substrate to the interior of the cuboid silicon substrate to be communicated; the three thin film magnetic resistance units are all provided with metal electrodes, and the silicon through hole conducting wires and the metal electrodes of the three thin film magnetic resistance units are integrated. This application forms film magnetic resistance unit at the three looks proximal surface of cuboid silicon substrate, through the through-silicon-via technique inside the cuboid silicon substrate form with the metal electrode connection of three film magnetic resistance unit silicon through-silicon-via wire as an organic whole, realize the electrical interconnection of three film magnetic resistance unit through the through-silicon-via wire, the integrated level is high, the good reliability. The detection of X, Y and Z three-dimensional magnetic fields is realized through the magnetic resistance units on the three surfaces based on three vertical surfaces of the cuboid silicon substrate, and the sensitivity is high.
The high-density three-dimensional magnetic sensor is integrated by fully utilizing the vertical space, and is small in size and low in power consumption. Because the cuboid silicon substrate is a monolithic solid structure, the adjacent plane angles can be strictly vertical to each other, the magnetic material is directly grown on the surface of the solid silicon substrate to form the thin film magneto-resistive unit, and no additional bonding material is needed, the deformation is uniform under thermal disturbance, and the excellent structural strength can be still maintained under vibration or impact conditions; and through-silicon-via wires are formed inside the solid silicon substrate to realize the electrical connection of the thin-film magnetic resistance units, rather than the traditional wire connection, so that the sensitivity and the precision of the magnetic sensor are higher.
The following provides a detailed description of the embodiments of the present application.
Fig. 1 is a schematic structural diagram of a three-dimensional magnetic sensor based on a rectangular silicon-based through hole according to an embodiment of the present application. As shown in fig. 1, the present embodiment provides a three-dimensional magnetic sensor based on a rectangular silicon substrate through hole, which includes a rectangular silicon substrate 10 and three thin film magneto-resistive units 20, where the three thin film magneto-resistive units 20 are respectively formed on surfaces of three adjacent surfaces of the rectangular silicon substrate 10. The three thin film magneto-resistive units 20 are connected with each other through silicon via wires 24 inside the cuboid silicon substrate 10, and the through silicon via wires 24 vertically extend from three adjacent surfaces of the cuboid silicon substrate 10 to the inside of the cuboid silicon substrate 10 for communication. The three thin film magneto-resistive cells 20 are each provided with a metal electrode 21, and the through-silicon via wires 24 are formed integrally with the metal electrodes 20 of the three thin film magneto-resistive cells.
In one embodiment, the through-silicon via wire 24 is formed by: etching silicon through hole openings on metal electrodes of the three thin film magneto-resistive units, vertically punching holes into the cuboid silicon substrate along the silicon through hole openings, and forming through silicon through holes in the cuboid silicon substrate; and filling a metal material in the silicon through hole to form a silicon through hole lead which is connected with the metal electrode of the film magneto-resistance unit into a whole. For the thin film magneto-resistive units of three adjacent surfaces of the rectangular silicon substrate, the positions of the metal electrodes are preset, namely the positions of the metal electrodes on the three adjacent surfaces are fixed, the metal electrodes on each surface can be vertically intersected on an extension line of the rectangular silicon substrate, and the intersected point is determined. In the through silicon via process, the ion etching time can be determined according to the intersection point, and the through silicon via is formed in the cuboid silicon substrate by accurately controlling the ion etching time so as to realize the mutual communication of the metal electrodes on different surfaces.
It should be noted that the tsv conductors 24 in fig. 1 are only schematic, and intersection points of vertical intersections of tsv conductors on different surfaces are not shown, and in practical applications, corresponding tsvs are connected in a punching process according to electrical interconnection needs, so that the tsv conductors 24 are connected to each other. The common edges of three adjacent surfaces of the cuboid silicon substrate 10 are equivalent to an X axis, a Y axis and a Z axis of a coordinate system, and three thin film magneto-resistance units 20 form three sensing planes X-Y, X-Z and Z-Y of the magnetic sensor, so that the detection of X, Y and Z three-dimensional magnetic fields is realized.
In an embodiment, the three thin film magneto-resistive units 20 are all close to a common vertex of three adjacent surfaces of the rectangular silicon substrate 10, so as to shorten the distance between the thin film magneto-resistive units 20, which is beneficial to enhancing the magnetic field sensing capability in the directions of the three axes X, Y, and Z. The through-silicon via is disposed at an end of the thin film magneto-resistive unit 20 and penetrates through the rectangular parallelepiped silicon substrate 10. The conductive material filled in the through silicon via can be selected from copper, tungsten, polysilicon and other materials. The cuboid silicon substrate 10 can be monocrystalline silicon, and the size can be 1mm multiplied by 2mm.
In one embodiment, as shown in FIG. 2, the thin film magnetoresistive cell 20 is a magnetically sensitive thin film layer based on the AMR anisotropic magnetoresistive effect. The thin film magneto-resistive element 20 comprises a wheatstone bridge structure, and the wheatstone bridge structure comprises four resistive elements, and every two resistive elements are connected through a metal electrode 21. The metal electrode 21 includes a square metal pad and a rectangular metal bar, and the resistance unit is connected to the square metal pad through the rectangular metal bar. Each resistance unit includes a plurality of magnetoresistive strips 22, and the plurality of magnetoresistive strips 22 are sequentially connected by a metal strap 23. Both ends of the magnetoresistive strips 22 can be provided in a 60 ° pointed shape to better induce the easy axis to be oriented along the long axis direction. The metal electrode 21 and the metal strip 23 are composed of a non-magnetic metal material, such as copper. The use of non-magnetic materials for the metal electrodes 21 and metal strips 23 avoids the resistance connecting adjacent magnetoresistive strips from interfering with overall device performance.
Fig. 3 is a flowchart of a manufacturing method of a three-dimensional magnetic sensor based on a rectangular through silicon via according to an embodiment of the present application. As shown in fig. 3, the present embodiment provides a method for manufacturing the three-dimensional magnetic sensor based on the rectangular silicon-based through hole, the method including the following steps:
s1, growing magnetic materials on the surfaces of three adjacent surfaces of a cuboid silicon substrate to form three thin-film magneto-resistive units with metal electrodes.
The thin film magnetic resistance unit is a magnetic sensitive thin film layer based on an AMR anisotropic magnetic resistance effect. The thin film magnetic resistance unit adopts a Wheatstone bridge structure, the Wheatstone bridge structure comprises four resistance units, and every two resistance units are connected through a metal electrode. The metal electrode 21 includes a square metal pad and a rectangular metal line, and the resistance unit is connected to the square metal pad through the rectangular metal line. Each resistance unit includes a plurality of magnetoresistive strips 22, and the plurality of magnetoresistive strips 22 are sequentially connected by a metal strap 23. Both ends of the magnetoresistive strips 22 may be formed in a 60 ° pointed shape to better induce the orientation of the easy axis along the long axis direction. The metal electrode 21 and the metal strip 23 are composed of a non-magnetic metal material, such as copper. The use of non-magnetic materials for the metal electrodes 21 and metal strips 23 avoids the resistance connecting adjacent magnetoresistive strips from interfering with overall device performance.
The magnetic material for forming the thin film magneto-resistive unit can be selected from Fe, co, ni and alloys thereof, rare earth elements and alloys thereof, or Mn compounds.
And S2, forming a silicon through hole lead which is connected with the metal electrodes of the three film magnetic resistance units into a whole in the cuboid silicon substrate by adopting a silicon through hole process.
Specifically, the metal electrodes of the thin film magnetic resistance units are etched to form silicon through hole openings, the cuboid silicon substrate is deeply etched along the silicon through hole openings on the metal electrodes of the three thin film magnetic resistance units respectively until through silicon through holes penetrating through the cuboid silicon substrate are formed inside the cuboid silicon substrate, and metal materials are filled in the through silicon through holes to form silicon through hole leads which are connected with the metal electrodes of the thin film magnetic resistance units into a whole.
For the thin film magnetic resistance units of the three adjacent surfaces of the cuboid silicon substrate, the positions of the metal electrodes are preset, namely the positions of the metal electrodes on the three adjacent surfaces are fixed, the metal electrodes on each surface can be vertically crossed on the extension line of the cuboid silicon substrate, the crossed intersection point is determined, the ion etching time can be determined according to the intersection point, and the ion etching time is accurately controlled to enable the through silicon holes penetrating through the cuboid silicon substrate to be formed inside the cuboid silicon substrate so as to realize the mutual communication of the metal electrodes on different surfaces.
In one embodiment, the through silicon via etching of three adjacent surfaces of the rectangular silicon substrate can be performed step by step. After the metal electrodes on the upper surface of the rectangular silicon substrate are etched to form the silicon through holes, the rectangular silicon substrate is rotated, the metal electrodes on the side surfaces of the rectangular silicon substrate are etched to form the silicon through holes, the silicon through holes on the two side surfaces are intersected with the silicon through holes on the upper surface, the metal electrodes on the three surfaces are communicated, and therefore the three thin film magnetic resistance units are communicated.
In another embodiment, the positions of through-silicon-via openings are defined on the surfaces of the three thin-film magnetoresistive units by photolithography, deep Reactive Ion Etching (DRIE) technology is adopted to etch the through-silicon-via openings at the positions of the through-silicon-via openings, the through-silicon-via openings are deeply etched to form through-silicon-vias extending to the interior of the rectangular silicon substrate, and the corresponding through-silicon-vias are communicated with each other. And filling a conductive material in the silicon through hole to form a silicon through hole lead which is mutually connected, and realizing the electrical connection of the three film magnetic resistance units through the silicon through hole lead.
Filling a metal material in the silicon through hole to form a silicon through hole lead which is connected with the metal electrode of the film magnetic resistance unit into a whole, and specifically comprises the following steps: an insulating dielectric layer, a metal diffusion barrier layer and a seed layer are sequentially grown on the inner wall of the through silicon via, a conductive metal material is filled in the through silicon via by adopting an electroplating or sputtering process, the surface of the filled through silicon via is flattened by adopting a Chemical Mechanical Polishing (CMP) process, and redundant metal materials are removed to form the through silicon via wire. The conductive metal material filled in the through silicon via is preferably copper or tungsten.
This application forms film magnetic resistance unit at the three looks proximal surface of cuboid silicon substrate, through the through-silicon-via technique inside the cuboid silicon substrate form with the metal electrode connection of three film magnetic resistance unit silicon through-silicon-via wire as an organic whole, realize the electrical interconnection of three film magnetic resistance unit through the through-silicon-via wire, the integrated level is high, the good reliability. Because the cuboid silicon substrate is a monolithic solid structure, the adjacent plane angles can be strictly vertical to each other, the magnetic material is directly grown on the surface of the solid silicon substrate to form the thin film magneto-resistive unit without using additional bonding material, the deformation is uniform under thermal disturbance, and the excellent structural strength can be still maintained under the vibration or impact condition; and through-silicon-via wires are formed inside the solid silicon substrate to realize the electrical connection of the thin-film magnetic resistance units, rather than the traditional wire connection, so that the sensitivity and the precision of the magnetic sensor are higher.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the present application and its equivalent technology, the present application is intended to include such modifications and variations as well.
Claims (13)
1. The utility model provides a three-dimensional magnetic sensor based on silicon-based through-hole of cuboid which characterized in that includes: a cuboid silicon substrate and three thin film magneto-resistive units;
the three thin film magneto-resistive units are respectively formed on the surfaces of three adjacent surfaces of the cuboid silicon substrate;
the three thin film magneto-resistive units are mutually connected through silicon through hole leads inside the cuboid silicon substrate, and the silicon through hole leads vertically extend from three adjacent surfaces of the cuboid silicon substrate to the inside of the cuboid silicon substrate to be communicated; the three film magnetic resistance units are provided with metal electrodes, and the silicon through hole lead and the metal electrodes of the three film magnetic resistance units are integrated.
2. The three-dimensional magnetic sensor based on the cuboid silicon-based through hole as claimed in claim 1, wherein the three thin-film magneto-resistive units are all close to a common vertex of three adjacent surfaces of the cuboid silicon substrate.
3. The three-dimensional magnetic sensor based on the cuboid silicon-based through hole as claimed in claim 1, wherein the thin film magneto-resistive unit is a magneto-sensitive thin film layer based on AMR anisotropic magneto-resistive effect.
4. The three-dimensional magnetic sensor based on the rectangular through silicon via of claim 1, wherein the thin film magneto-resistive unit comprises a Wheatstone bridge structure.
5. The three-dimensional magnetic sensor based on the rectangular silicon-based through hole as claimed in claim 4, wherein the Wheatstone bridge structure comprises four resistor units, and every two resistor units are connected through a metal electrode.
6. The three-dimensional magnetic sensor based on the rectangular silicon-based through hole as claimed in claim 5, wherein each resistance unit comprises a plurality of magnetoresistive strips, and the plurality of magnetoresistive strips are connected in sequence through a metal strip.
7. The three-dimensional magnetic sensor based on the rectangular silicon-based through hole according to claim 6, wherein two ends of the magnetoresistive strip are arranged in a 60 ° closed angle shape.
8. The three-dimensional magnetic sensor based on the cuboid silicon-based through hole according to claim 6, wherein the metal electrode and the metal strip are composed of a non-magnetic metal material.
9. The three-dimensional magnetic sensor based on the cuboid silicon-based through hole as claimed in claim 1, wherein the through silicon via wire is formed by:
etching silicon through hole openings on metal electrodes of the three thin film magneto-resistive units, vertically punching holes into the cuboid silicon substrate along the silicon through hole openings, and forming through silicon through holes in the cuboid silicon substrate;
and filling a metal material in the silicon through hole to form a silicon through hole lead which is connected with the metal electrode of the film magneto-resistance unit into a whole.
10. A method for manufacturing a three-dimensional magnetic sensor based on a rectangular through silicon via according to any one of claims 1 to 8, the method comprising:
growing magnetic materials on the surfaces of three adjacent surfaces of the cuboid silicon substrate to form three thin film magneto-resistive units with metal electrodes;
and forming a silicon through hole lead which is connected with the metal electrodes of the three film magneto-resistive units into a whole in the cuboid silicon substrate by adopting a silicon through hole process.
11. The method for manufacturing the three-dimensional magnetic sensor according to claim 10, wherein the forming of the through-silicon via wire integrally connected with the metal electrodes of the three thin film magneto-resistive units inside the rectangular silicon substrate by using the through-silicon via process comprises:
etching the metal electrode of the film magnetic resistance unit to form a silicon through hole opening;
deeply etching the cuboid silicon substrate along the silicon through hole openings on the metal electrodes of the three thin film magneto-resistive units respectively until through silicon through holes are formed in the cuboid silicon substrate;
and filling a metal material in the silicon through hole to form a silicon through hole lead which is connected with the metal electrode of the thin film magneto-resistive unit into a whole.
12. The method of claim 11, wherein the filling of the through-silicon-via with a metal material to form a through-silicon-via wire integrally connected to the metal electrode of the thin-film magnetoresistive cell comprises:
sequentially growing an insulating medium layer, a metal diffusion barrier layer and a seed layer on the inner wall of the silicon through hole;
filling a conductive metal material in the through silicon via by adopting an electroplating or sputtering process;
and carrying out surface planarization treatment on the filled silicon through hole to form a silicon through hole conducting wire.
13. The method of claim 12, wherein the conductive metal material filled in the through silicon via is copper or tungsten.
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