CN115347457A - Semiconductor laser and manufacturing method thereof - Google Patents
Semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN115347457A CN115347457A CN202211020024.4A CN202211020024A CN115347457A CN 115347457 A CN115347457 A CN 115347457A CN 202211020024 A CN202211020024 A CN 202211020024A CN 115347457 A CN115347457 A CN 115347457A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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Abstract
The application discloses a semiconductor laser and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface which are opposite; the first surface is provided with a plurality of device areas which are sequentially arranged; an isolation region is arranged between two adjacent device regions; forming a deep groove in the surface of the isolation region; the epitaxial layer is formed on the surface of the device area, the epitaxial growth rate is different based on the deep groove, so that the part of the epitaxial layer, which is positioned in the middle area of the device area, is different from the epitaxial material component of the edge part, which is close to the deep groove, of the deep groove, the thickness of the epitaxial layer is different, a non-absorption window structure is formed, the non-absorption window layer is formed on the epitaxial layer, the optical catastrophe damage of the laser is reduced, the epitaxial layer is grown in the deep groove mode, the growth quality of the quantum well is not influenced by a dielectric film, the process is simple and reliable, the cost is low, and the quality of the grown epitaxial layer is favorably improved.
Description
Technical Field
The present application relates to the field of laser display, and more particularly, to a semiconductor laser and a method for fabricating the same
Background
At present, semiconductor lasers are widely used in various fields, and the design and fabrication of an epitaxial wafer is the most central technology in the fabrication process of semiconductor lasers. For a high-power semiconductor laser, end face optical catastrophic damage is one of main reasons for limiting the output power of the high-power semiconductor laser, when the output power of the semiconductor laser exceeds a certain critical value, the optical catastrophic damage can occur and lead to cavity surface melting and rapid recrystallization of the laser, moreover, the influence of the optical catastrophic damage on the working efficiency of the laser is instantaneous, severe and completely destructive, the optical catastrophic damage belongs to unrecoverable damage, and once the optical catastrophic damage occurs, the whole device can completely fail.
Disclosure of Invention
In view of the above, the present application provides a semiconductor laser and a method for manufacturing the same, and the scheme is as follows: a method of fabricating a semiconductor laser, the method comprising:
providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface which are opposite; the first surface is provided with a plurality of device areas which are sequentially arranged; an isolation region is arranged between two adjacent device regions;
forming a deep groove in the surface of the isolation region;
and forming an epitaxial layer on the surface of the device region, wherein the epitaxial growth rate caused by the deep groove is different, so that the epitaxial material composition of the part of the epitaxial layer positioned in the middle region of the device region is different from that of the part of the epitaxial layer positioned close to the edge of the groove, and the thickness of the epitaxial layer is different, so as to form a non-absorption window structure.
Preferably, forming a deep trench in a surface of the isolation region includes:
the first surface is provided with a plurality of parallel isolation regions, and the deep grooves are formed in the isolation regions.
Preferably, the extending direction of the trench is parallel to the [110] crystal direction of the semiconductor substrate.
Preferably, the method of forming the epitaxial layer includes:
forming a buffer layer on a surface of the device region;
forming a lower limiting layer on one side of the buffer layer, which is far away from the device region;
forming a lower waveguide layer on one side of the lower limiting layer, which is far away from the buffer layer;
forming a quantum well active layer on a side of the lower waveguide layer facing away from the lower confinement layer;
forming an upper waveguide layer on one side of the quantum well active layer, which is far away from the lower waveguide layer;
forming an upper limiting layer on one side of the upper waveguide layer, which is far away from the quantum well active layer;
forming a barrier graded layer on a side of the upper confinement layer facing away from the upper waveguide layer;
and forming an ohmic contact layer on one side of the barrier gradual change layer, which is far away from the upper limiting layer.
Preferably, the depth of the trench is not less than the thickness of the epitaxial layer.
Preferably, the depth of the groove is 2-3 times of the sum of the thicknesses of the buffer layer and the quantum well active layer.
Preferably, in the first direction, the epitaxial layer on the surface of the device region includes: a middle portion and edge portions located at both sides of the middle portion;
wherein the first direction is parallel to the first surface and perpendicular to a forming direction of the deep trench; the thickness of the edge portion is less than the thickness of the middle portion, and the edge portion is the non-absorbent window structure.
Preferably, the manufacturing method further comprises:
patterning the epitaxial layer to form a ridge waveguide structure;
forming a first electrode on one side of the ridge waveguide structure, which faces away from the epitaxial layer;
and forming a second electrode on the second surface of the semiconductor substrate.
A semiconductor laser, said semiconductor laser comprising:
a semiconductor substrate having opposing first and second surfaces;
the first surface is provided with a plurality of device areas which are sequentially arranged; an isolation region is arranged between two adjacent device regions;
a deep trench located within the isolation region surface;
and the epitaxial layer is positioned on the surface of the device region, and based on the difference of epitaxial growth rates caused by the deep grooves, the epitaxial material composition of the part of the epitaxial layer positioned in the middle area of the device region is different from that of the part of the epitaxial layer positioned close to the edge of the groove, and the thickness of the epitaxial layer is different, so that a non-absorption window structure is formed.
Preferably, in the first direction, the epitaxial layer on the surface of the device region includes: a middle portion and edge portions located at both sides of the middle portion;
wherein the first direction is parallel to the first surface and perpendicular to a forming direction of the deep trench; the thickness of the edge portion is less than the thickness of the middle portion, and the edge portion is the non-absorbent window structure.
Through the foregoing, the present application provides a semiconductor laser and a method for manufacturing the same, where the method for manufacturing the semiconductor laser includes: providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface which are opposite; the first surface is provided with a plurality of device areas which are arranged in sequence; an isolation region is arranged between two adjacent device regions; forming a deep groove in the surface of the isolation region; the epitaxial layer is formed on the surface of the device area, the epitaxial growth rate is different based on the deep groove, so that the epitaxial layer is positioned in the middle area of the device area, the components of epitaxial materials of the epitaxial material of the epitaxial layer are different from those of the epitaxial material of the edge part close to the groove, the thickness of the epitaxial layer is different, a non-absorption window structure is formed, the deep groove is formed in the isolation area, the non-absorption window layer is formed on the epitaxial layer, the optical catastrophe damage of the laser is reduced, the epitaxial layer is grown in the deep groove mode, the growth quality of the quantum well is not influenced by a dielectric film, the process is simple and reliable, the cost is low, and the quality of the grown epitaxial layer is favorably improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in related arts, the drawings used in the description of the embodiments or prior arts will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
The structures, the proportions, the sizes, and the like shown in the drawings are only used for matching the disclosure disclosed in the specification, so that those skilled in the art can understand and read the disclosure, and do not limit the conditions and conditions for implementing the present application, so that the present disclosure has no technical essence, and any structural modifications, changes of the proportion relation, or adjustments of the sizes, should still fall within the scope of the disclosure which can be covered by the disclosure in the present application without affecting the efficacy and the achievable purpose of the present application.
Fig. 1 is a schematic structural diagram of a semiconductor laser fabricated by a fabrication method of a semiconductor laser according to an embodiment of the present application;
fig. 2-3 are process flow diagrams of a method for fabricating a semiconductor laser according to an embodiment of the present disclosure;
FIG. 4 is a top view of a lithographic pattern forming the patterned semiconductor substrate in an embodiment of the present application;
fig. 5 is a schematic structural diagram of the epitaxial layer in the method for fabricating a semiconductor laser according to the embodiment of the present application;
fig. 6 is a schematic structural diagram of another semiconductor laser provided in an embodiment of the present application.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the application are shown, and in which it is to be understood that the embodiments described are merely illustrative of some, but not all, of the embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The semiconductor laser has the advantages of small volume, low power consumption, high efficiency and low cost, is widely applied to the fields of laser storage, laser pumping, laser printing, material processing, laser marking, laser medical treatment, medical instruments, space optical communication and the like, and can also be applied to laser targeting, laser guidance, laser night vision, laser radars, laser fuzes, laser weapons, war simulation and the like in the military field. The high-power semiconductor laser technology covers almost all photoelectronic fields, and the development of a high-performance high-power laser needs to be coordinated from multiple aspects such as laser epitaxial wafer structure design, material growth, device manufacturing, cavity surface optical coating, device packaging, beam shaping and coupling, but undoubtedly, the design and the manufacturing of the semiconductor laser epitaxial wafer are the most core technology.
For a high-power semiconductor laser, the most important epitaxial structure design needs to solve three problems: (1) reducing free carrier absorption of the P-type; (2) Reducing series resistance, reducing thermal resistance and reducing high-temperature electron leakage; and (3) reducing optical catastrophic damage to the end face. The optical catastrophe damage is one of main reasons for limiting the output power of the high-power semiconductor laser, and belongs to unrecoverable damage, once the optical catastrophe damage occurs, the whole device can be completely disabled, and the problem that the high-power semiconductor laser is urgently needed to solve is to reduce the optical damage on the end face.
Cavity surface disaster optical mirror Damage (COD for short): the main reason for the sudden failure of the edge-emitting semiconductor laser has been to limit the maximum output power and reliability of the laser. In order to solve the problem of optical catastrophe damage, there are generally three methods: (1) The cavity surface passivation and coating process is to deposit a passivation layer of several nanometers or dozens of nanometers on the cavity surface of the semiconductor laser, and then coat anti-reflection and high-reflection films on the front and back cavity surfaces respectively, so as to reduce the defects and surface state density near the cavity surface and inhibit the non-radiative recombination process. The cavity surface passivation technology mainly comprises a cavity surface vulcanization treatment technology, a vacuum cleavage coating technology and the like; (2) The large optical cavity structure design can reduce the optical power density of the cavity surface and reduce the absorption of free carriers at the cavity surface; the non-absorption window structure can reduce the modal absorption near the cavity surface and the gain characteristic of the material, and a transparent region of the lasing wavelength is formed by increasing the band gap structure of the material near the cavity surface so as to reduce the light absorption; and a tensile strain quantum well structure can be introduced at the end face of the strain quantum well laser to compensate the strain released when the biaxial compressive strain in the laser is converted into the uniaxial compressive strain, so that the light absorption at the cavity surface is reduced. (3) A current non-injection region (such as an isolation trench process) and a current blocking layer are introduced near the cavity surface, so that the injection current density and the carrier concentration at the cavity surface are reduced.
Forming a non-absorbing window at the facet, two methods are currently in common use: one is by selective epitaxial growth technique; the other is to use quantum well intermixing. The commonly used selective area epitaxial growth method adopts SiO2 or SiN as a dielectric film, and utilizes the characteristics that high-purity metal organic compounds cannot nucleate on the surface of the dielectric mask and have different migration rates on the surface of the substrate to realize an epitaxial growth technology for growing materials with different band gap widths in different areas. Since the selective area epitaxial growth technology usually uses SiO2 or SiN as a dielectric film, new contamination may be introduced, which affects the material quality of the grown quantum well. Because the difficulty of the selective area epitaxial growth method is higher, the selective area epitaxial growth method is generally less adopted. Selective Area Growth (SAG): the earliest 80 s reported that the technology opened a new window for monolithic integration technology, extended the material epitaxial growth to the non-planar growth field, greatly expanded the application field of monolithic integration, and expanded the application range of Metal Organic Chemical Vapor Deposition (MOCVD) system. The selective area epitaxial growth is an epitaxial growth technology for growing materials with different forbidden band widths in different areas by manufacturing a dielectric mask according to the characteristic that a high-purity metal organic compound cannot nucleate on the surface of the dielectric mask. The reactants cannot nucleate on the surface of the dielectric mask and then laterally diffuse, causing a high concentration of reactant particles to collect in the areas between the dielectric mask features, which increases the growth rate. According to the quantum mechanics principle, the band gap wavelength of the quantum well is in direct proportion to the thickness of the well, so that the purpose of obtaining materials with different forbidden band widths is achieved. The selective area epitaxial growth technology has the advantages of one-time epitaxial growth of an active layer, simple process, small loss among devices and the like, and is a mature and commercial technology.
Non-absorbing window layer technique: the band gap width of the quantum well near the cavity surface of the semiconductor laser is increased, so that the semiconductor laser is transparent to the lasing wavelength, and the method is an effective method for inhibiting the light absorption of the cavity surface and reducing the photon-generated carriers at the cavity surface. In order to form a non-absorbing window at the facet, the equivalent bandgap of the quantum well near the facet needs to be increased, and there are two methods commonly used at present: one is by selective epitaxial growth technique; and the second is Quantum Well Intermixing (QWI-Quantum Well Intermixing).
At present, in order to solve the problem of optical catastrophe damage of the end face, two methods are disclosed: a high-power semiconductor laser of a non-absorption window layer formed by adopting a quantum well hybridization technology can improve the optical catastrophic damage of the end face of the semiconductor laser; a quantum well hybridization manufacturing method utilizes an inductive coupling plasma etching method to replace a step of growing a dielectric film to form protection, simplifies the preparation process and reduces the process difficulty. However, the quantum well hybridization technology has great difficulty, complex process and high cost.
In order to solve the problem of optical catastrophe damage, the application provides a laser and an epitaxial growth method thereof, and a high-power laser epitaxial wafer with good performance and reliability is obtained. Particularly, a selective area epitaxial growth method is adopted, a non-absorption window is formed near the cavity surface of the high-power laser to reduce light absorption at the cavity surface, output power is effectively improved, and non-fatal damage of thermal saturation of a device caused by optical catastrophe damage effect is eliminated. The selective area epitaxial growth technology adopted by the application does not evaporate a dielectric film, but adopts a deep groove technology, and utilizes the characteristic that different atoms have different migration rates on the surface of the semiconductor substrate to change the components and the thickness of the epitaxial material grown on the end face, so as to form the non-absorption window layer of the high-power laser.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a semiconductor laser fabricated based on a fabrication method of a semiconductor laser in an embodiment of the present application, where the embodiment provides a fabrication method of a laser, and the fabrication method includes: providing a semiconductor substrate 1, wherein the semiconductor substrate 1 is provided with a first surface S1 and a second surface S2 which are opposite; the first surface S1 is provided with a plurality of device regions 2 which are sequentially arranged; an isolation region 3 is arranged between two adjacent device regions 2;
forming a deep trench 31 in the surface of the isolation region 3;
forming an epitaxial layer 21 on the surface of the device region 2, wherein the epitaxial layer 21 has a different composition and thickness of epitaxial material at a middle region of the device region 2 and at an edge portion close to the deep trench 31 based on a difference in growth rate of the epitaxial layer 21 caused by the deep trench 31, so as to form a non-absorption window structure 4.
Based on the above, the process flow diagrams of the method for manufacturing the semiconductor laser according to the embodiment of the present application are shown in fig. 2 to 3, and fig. 2 to 3 are the process flow diagrams of the method for manufacturing the semiconductor laser according to the embodiment of the present application;
step S11: as shown in fig. 2, a semiconductor substrate 1 is provided, the semiconductor substrate 1 has a first surface S1 and a second surface S2 opposite to each other, the first surface S1 has a plurality of device regions 2 arranged in sequence, the widths of the device regions 2 are the same, the device regions 2 are parallel to each other, and the widths of the device regions 2 can be set according to the width of the semiconductor substrate 1. The isolation region 3 is provided between two adjacent device regions 2, and the width of the isolation region 3 is smaller than that of the device region 2.
Step S12: as shown in fig. 3, a deep trench 31 is formed in the surface of the isolation region 3, wherein the deep trench 31 is formed by etching, and the method for forming the deep trench 31 includes: a photoresist is spin-coated on the first surface S1 of the semiconductor substrate 1, the photoresist may be AZ5214 series photoresist, a required lithography pattern is formed by using an optical lithography method, development is required during the lithography, a developing solution required for the development is an MF319 solution, and the deep trench 31 is formed in the isolation region 3 by a solution etching method after the development.
Step S13: forming an epitaxial layer 21 on the surface of the device region 2, forming a schematic view of a semiconductor laser structure as shown in fig. 1, forming the deep trench 31 before forming the epitaxial layer 21, so that atoms forming the epitaxial layer 21 located near the deep trench 31 can drop into the semiconductor substrate 1 due to diffusion of atoms when forming the epitaxial layer 21, so that the thickness of the epitaxial layer 21 located at two sides of the deep trench 31 is different from the thickness in the middle of the epitaxial layer 21, thereby forming a non-absorption window structure 4 on the epitaxial layer 21, i.e., based on the difference in growth rate of the epitaxial layer 21 caused by the deep trench 31, so that the epitaxial material composition of the part of the epitaxial layer 21 located in the middle region of the device region 2 is different from that of the epitaxial material located at the edge part of the deep trench 31, and the thickness is different, so as to form the non-absorption window structure 4.
The non-absorption window structure 4 formed on the epitaxial layer 21 can reduce light absorption at the cavity surface of the semiconductor laser, effectively improve output power, eliminate the optical catastrophic damage effect to generate non-fatal damage of device thermal saturation, and grow the epitaxial layer 21 in a deep groove 31 mode without a dielectric film to influence the growth quality of a quantum well, the process is simple and reliable, the cost is low, and thus the quality of the grown epitaxial layer 21 is favorably improved.
Referring to fig. 3, a deep trench 31 is formed in the surface of the isolation region 3, including:
the first surface S1 has a plurality of parallel isolation regions 3, and the deep trenches 31 are formed in the isolation regions 3.
The first surface S1 has a plurality of parallel isolation regions 3, the isolation regions 3 are disposed on the first surface S1 of the semiconductor substrate 1, deep trenches 31 are formed in the isolation regions 3, so that when the epitaxial layer 21 is formed on the surface of the device region 2, non-absorbing window structures 4 are formed on the epitaxial layer 21, wherein a plurality of parallel device regions 2 are disposed on the semiconductor substrate 1, in order to form the non-absorbing window structures 4 on the epitaxial layer 21 of each device region 2, a plurality of isolation regions 3 are required to form the deep trenches 31, and if n device regions 2,n on the semiconductor substrate 1 are positive integers greater than 1, n-1 deep trenches 31 are required on the semiconductor substrate 1, that is, n-1 isolation regions 3 are required on the semiconductor substrate 1.
Referring to fig. 1, the deep trench 31 extends in a direction parallel to a [110] crystal direction of the semiconductor substrate 1.
Referring to fig. 4, fig. 4 is a top view of a lithographic pattern forming the patterned semiconductor substrate in an embodiment of the present application; in step S12, it is described that the deep trench 31 is obtained by etching the semiconductor substrate 1, when the semiconductor substrate 1 is etched, a required photolithography pattern is required to be formed by an optical photolithography method, and the photolithography pattern is a pattern in which the mark holes are periodically arranged and parallel to the crystal direction of the large flat edge [110] of the semiconductor substrate 1, and the deep trench 31 is formed by performing chemical etching according to the photolithography pattern, that is, the extending direction of the deep trench 31 is parallel to the crystal direction of the [110] of the semiconductor substrate 1, and the photolithography pattern is parallel to the crystal direction of the large flat edge [110] of the semiconductor substrate 1, so that the ridge direction of a chip for subsequently forming the semiconductor laser is perpendicular to the crystal direction of the [110 ].
Referring to fig. 5, fig. 5 is a schematic structural diagram of the epitaxial layer 21 in a method for manufacturing a semiconductor laser according to an embodiment of the present application; the method for forming the epitaxial layer 21 in the device region 2 comprises the following steps:
forming a buffer layer 211 on a surface of the device region 2;
forming a lower confinement layer 212 on a side of the buffer layer 211 facing away from the device region 2;
forming a lower waveguide layer 213 on a side of the lower confinement layer 212 facing away from the buffer layer 211;
forming a quantum well active layer 214 on a side of the lower waveguide layer 213 facing away from the lower confinement layer 212;
forming an upper waveguide layer 215 on a side of the quantum well active layer 214 facing away from the lower waveguide layer 213;
forming an upper confinement layer 216 on a side of said upper waveguide layer 215 facing away from said quantum well active layer 214;
forming a barrier graded layer 217 on a side of said upper confinement layer 216 facing away from said upper waveguide layer 215;
an ohmic contact layer 218 is formed on a side of the barrier graded layer 217 facing away from the upper confinement layer 216.
Referring to fig. 1, the epitaxial layer 21 is formed by growing the etched semiconductor substrate 1 in a mocvd (metal organic chemical vapor deposition) system, and during the epitaxial growth of the mocvd system, for a given semiconductor substrate (substrate), the growth rate of the epitaxial layer 21 in the present embodiment can be calculated by the following formula due to the deep trench 31:
where k is the surface growth rate per atomic concentration and is substantially constant. D is the atomic diffusion rate, N is the source material concentration, and Y represents the direction of the deep trench width. When the metal organic chemical vapor deposition system grows the epitaxial layer 21 of the semiconductor laser, atoms fall on the semiconductor substrate 1, and the atoms near the deep trench 31 can rapidly fall into the deep trench 31 due to diffusion, which results in a thinner thickness of the epitaxial layer 21 grown near the deep trench 31, and for the semiconductor laser, the thickness of the quantum well active layer 214 is reduced, the band gap width of the quantum well is increased, so as to be transparent to the lasing wavelength, i.e., form the non-absorbing window structure 4.
As shown in fig. 1, in the first direction, the epitaxial layer 21 on the surface of the device region 2 includes: a middle portion and edge portions at both sides of the middle portion;
wherein the first direction is parallel to the first surface S1 and perpendicular to a forming direction of the deep trench 31; the thickness of the edge portion, which is the non-absorbent window structure 4, is smaller than the thickness of the intermediate portion.
In the first direction, the epitaxial layer 21 comprises two parts: the middle part and be located the marginal part of middle part both sides, the middle part is laser instrument gain area 5, is located of middle part both sides do not absorb window structure 4, the thickness of laser instrument gain area 5 is greater than the thickness of non-absorption window structure 4, wherein, non-absorption window structure 4 can reduce the optics catastrophe damage of laser instrument, and adopts the mode growth of deep groove 31 epitaxial layer 21, no dielectric film influences quantum well growth quality, and simple process is reliable, and is with low costs to be favorable to improving the quality of the epitaxial layer 21 of growing.
Referring to fig. 6, fig. 6 is a schematic structural diagram of another semiconductor laser provided in the embodiment of the present application; when the epitaxial layer 21 is formed in the device region 2, the epitaxial layer 6 is also formed in the deep trench 31, but the non-absorption window structure 4 is not formed in the epitaxial layer 6 located in the deep trench 31, and the thickness of the epitaxial layer 6 is the same as or slightly greater than the thickness of the laser gain region 5 in the middle portion of the epitaxial layer 21.
Referring to fig. 6, the depth of the deep trench 31 is not less than the thickness of the epitaxial layer 21, that is, the depth of the deep trench 31 is not less than the thickness of the middle portion of the epitaxial layer 21, that is, the thickness of the deep trench 31 is not less than the thickness of the epitaxial layer 6, wherein the thickness of the deep trench 31 is not less than the thickness of the epitaxial layer 6 in order to not affect the formation of the non-absorption window structure 4 on the epitaxial layer 21 when the epitaxial layer 21 is formed, if the thickness of the epitaxial layer 6 is greater than the thickness of the deep trench 31, when the epitaxial layer 21 is formed, the deep trench 31 will be filled with the epitaxial layer 6, atoms near the deep trench 31 cannot fall off, the edge portion of the epitaxial layer 21 will not become thin, and the thickness of the middle portion and the thickness of the edge portion of the epitaxial layer 21 will be the same, so that the non-absorption window structure 4 cannot be formed.
The deep trench 31 has a depth 2-3 times the sum of the thicknesses of the buffer layer 211 and the quantum well active layer 214. Generally, the depth of the deep trench is 5-10 μm, the optimal depth is 2-3 times of the sum of the thicknesses of the buffer layer 211 and the quantum well active layer 214 in the epitaxial layer 21, wherein the sum of the thicknesses of the buffer layer 211 and the quantum well active layer 214 does not include the thickness of the quantum active layer 214, and in addition, the range of the width and the length of the deep trench 31 is that the width of the deep trench 31 is 90-150 μm, and the optimal width is 10% of the length of the semiconductor laser cavity to be formed; the cavity length of the semiconductor laser is a size of a light emitting area of a chip in the semiconductor laser, and is a parameter of the chip, the length of the deep trench 31 penetrates through the entire semiconductor substrate 1, a lateral distance between two adjacent deep trenches 31 can be set according to the cavity length of the semiconductor laser, and the lateral distance between two adjacent deep trenches 31 is a width of the device region 2.
Based on the above-mentioned method for manufacturing a semiconductor laser, the present application provides another embodiment of a semiconductor laser.
Referring to fig. 1, another embodiment proposed in the present application is a semiconductor laser including:
a semiconductor substrate 1, wherein the semiconductor substrate 1 is provided with a first surface S1 and a second surface S2 which are opposite;
the first surface S1 is provided with a plurality of device regions 2 which are sequentially arranged; an isolation region 3 is arranged between two adjacent device regions 2;
a deep trench 31 located within the isolation region 3 surface;
the epitaxial layer 21 on the surface of the device region 2 has different epitaxial material compositions and different thicknesses in the middle region of the device region 2 and the edge portion near the deep trench 31 based on the difference of the epitaxial growth rate caused by the deep trench 31, so as to form a non-absorption window structure 4.
The semiconductor laser that this application embodiment provided includes semiconductor substrate 1 the deep groove 31 with epitaxial layer 21, because formed on the semiconductor substrate 1 the deep groove 31, so formed on the epitaxial layer 21 non-absorption window structure 4 form on the epitaxial layer 21 non-absorption window structure 4 can reduce the optics catastrophe damage of laser instrument, and the selective area epitaxial growth technique that this application adopted, the dielectric film of not evaporating plating, but adopt the deep groove 3 technique, utilize different atoms to be in the different characteristics of semiconductor substrate 1 surface migration rate make terminal surface department growth epitaxial material component and thickness change, form the non-absorption window structure 4 of high-power laser instrument.
Referring to fig. 6, in the first direction, the epitaxial layer 31 on the surface of the device region 2 includes: a middle portion and edge portions located at both sides of the middle portion;
wherein the first direction is parallel to the first surface S1 and perpendicular to a forming direction of the deep trench 31; the thickness of the edge portion, which is the non-absorbent window structure 4, is smaller than the thickness of the intermediate portion.
Based on the above-mentioned embodiment, the present application provides another embodiment, in which a GaAs substrate is used as the semiconductor substrate 1 to form a high-power 976nm FP semiconductor laser.
The conductivity of the embodiment of the application is 1-4x10 18 cm -2 The GaAs substrate of (1) is the semiconductor substrate 1, and the formation of the semiconductor laser includes: at a conductivity of 1-4x10 18 cm -2 Coating AZ5214 series photoresist on the GaAs substrate, forming mark holes and large flat edges (110) arranged periodically and parallel to the GaAs substrate by optical lithography and development]The crystal orientation is patterned, and the developing solution is MF319 solution. The developed epitaxial wafer adopts H 2 SO 4 The deep trench 31 is formed by etching a series of solutions, wherein the specific solutions are as follows: h 2 SO 4 :H 2 O 2 :H 2 O = 3. In particular, the deep trench 31 is oriented parallel to the large flat side [110] of the semiconductor substrate 1]Crystal orientation, width of 100 μm, depthIs 5.5um, with a length running through the entire semiconductor substrate 1, with a period of 1.2mm.
TABLE 1 parameter table of epitaxial structure of high-power 976nm FP semiconductor laser in the embodiment of the present application
| Serial number | Epitaxial material | Thickness of | Wavelength of light | Doping material | Doping | Remarks for note |
| 218 | P-GaAs | 100nm | / | C | 8E19cm -3 | Ohmic contact layer |
| 217 | P-Al 0.15 Ga 0.85 As | 20nm | / | C | 3E19cm -3 | Barrier graded layer |
| 216 | P-Al 0.55 Ga 0.45 As | 1200nm | / | C | 0.5-5E18cm -3 | Upper limiting layer |
| 215 | P-Al 0.25 Ga 0.75 As | 220nm | / | C | 0-5E17cm -3 | |
| 214 | GaInAs | 8nm | 956nm | / | / | Quantum well active layer |
| 213 | N-Al 0.25 Ga 0.75 As | 300nm | / | Te | 0-1E18cm -3 | Lower waveguide layer |
| 212 | N-Al 0.55 Ga 0.45 As | 1500nm | / | Te | 1E18cm -3 | Lower limiting layer |
| 211 | N-GaAs | 200nm | / | Si | 1-3E18cm -3 | Buffer layer |
| 1 | N-GaAs | 350um | / | Si | 2E18cm -3 | Semiconductor substrate |
Referring to table 1, table 1 is a parameter table of an epitaxial structure of a high-power 976nm FP semiconductor laser according to an embodiment of the present application, where after the deep trench 31 is formed on the semiconductor substrate 1, the semiconductor substrate 1 with the deep trench 31 is placed into a metal organic chemical vapor deposition system for growth. The pressure in the reaction chamber is 50mbar, the growth temperature is 670 ℃, and H is used 2 As carrier gas, trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAl), diethyltellurium (DeTe), carbon tetrachloride (CCl) 4 ) Silane (SiH) 4 ) Arsine (AsH) 3 ) And Phosphane (PH) 3 ) Etc., as a source gas, an N-GaAs buffer layer 211 is sequentially grown,an N-AlGaAs confinement layer 212, an N-AlGaAs lower waveguide layer 213, a GaInAs quantum well active layer 214, a P-AlGaAs upper waveguide layer 215, a P-AlGaAs confinement layer 216, a P-AlGaAs transition layer 217, a P-GaAs ohmic contact layer 218, and the like.
After the epitaxial layer 21 is grown, a ridge waveguide structure can be formed by utilizing photoetching and etching processes, then a front electrode is evaporated on the ridge waveguide structure, the GaAs substrate is thinned, and a back electrode is evaporated on the back of the thinned GaAs substrate; and then the semiconductor laser is cleaved into bars, a high-reflection film (with the reflectivity of 90 percent) is evaporated at one end of each bar, and a low-reflection film (with the reflectivity of 14 percent) is evaporated at the other end of each bar, so that the high-power semiconductor laser is manufactured.
After the epitaxial layer 21 is formed, a high-power laser chip can be formed by the technologies of photoetching, film coating, metal evaporation, scribing, and the like.
This application is through forming on semiconductor substrate 1 deep groove 31 makes form on the epitaxial layer 21 non-absorption window structure 4, through this kind of method that adopts selective area epitaxial growth, forms near high-power laser cavity face non-absorption window structure 4 reduces the light absorption of cavity face department, effectively improves output, eliminates optical catastrophe damage effect and produces this kind of non-fatal damage of device thermal saturation, and the selective area epitaxial growth technique that this application adopted, and the dielectric film of evaporation plating is not adopted, but adopts the deep groove technique, utilizes the different characteristics of atom migration rate difference on the semiconductor substrate surface, makes terminal surface department growth epitaxial material component and thickness change, forms the non-absorption window structure of high-power laser.
The embodiments in the present description are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments can be referred to each other. Since the semiconductor laser disclosed in the embodiment corresponds to the manufacturing method disclosed in the embodiment, the description is relatively simple, and the relevant points can be referred to the description of the manufacturing method.
It should be noted that in the description of the present application, the drawings and the description of the embodiments are to be regarded as illustrative in nature and not as restrictive. Like numerals refer to like structures throughout the description of the embodiments. Additionally, the figures may exaggerate the thicknesses of some layers, films, panels, regions, etc. for ease of understanding and ease of description. It will also be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In addition, "on …" means that an element is positioned on or under another element, but does not essentially mean that an element is positioned on the upper side of another element according to the direction of gravity.
The terms "upper," "lower," "top," "bottom," "inner," "outer," and the like refer to an orientation or positional relationship relative to an orientation or positional relationship shown in the drawings for ease of description and simplicity of description, but do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may be present.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in an article or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method of fabricating a semiconductor laser, the method comprising:
providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface which are opposite; the first surface is provided with a plurality of device areas which are sequentially arranged; an isolation region is arranged between two adjacent device regions;
forming a deep groove in the surface of the isolation region;
and forming an epitaxial layer on the surface of the device region, wherein the growth rate of the epitaxial layer is different due to the deep groove, so that the epitaxial material composition of the part of the epitaxial layer in the middle region of the device region is different from that of the part of the epitaxial layer close to the edge of the deep groove, and the thickness of the epitaxial layer is different, so as to form a non-absorption window structure.
2. The method of claim 1, wherein forming a deep trench in a surface of the isolation region comprises:
the first surface is provided with a plurality of parallel isolation regions, and the deep grooves are formed in the isolation regions.
3. The method of claim 1, wherein the deep trench extends parallel to a [110] crystal direction of the semiconductor substrate.
4. The method of claim 1, wherein the step of forming the epitaxial layer comprises:
forming a buffer layer on a surface of the device region;
forming a lower limiting layer on one side of the buffer layer, which is far away from the device region;
forming a lower waveguide layer on one side of the lower limiting layer, which is far away from the buffer layer;
forming a quantum well active layer on one side of the lower waveguide layer away from the lower confinement layer;
forming an upper waveguide layer on one side of the quantum well active layer, which is far away from the lower waveguide layer;
forming an upper confinement layer on a side of the upper waveguide layer facing away from the quantum well active layer;
forming a barrier graded layer on a side of the upper confinement layer facing away from the upper waveguide layer;
and forming an ohmic contact layer on one side of the barrier gradual change layer, which is far away from the upper limiting layer.
5. The method of claim 4, wherein the deep trench has a depth not less than a thickness of the epitaxial layer.
6. The method of claim 4, wherein the deep trench has a depth of 2-3 times the sum of the thicknesses of the buffer layer and the quantum well active layer.
7. The method of manufacturing according to claim 1, wherein, in the first direction, the epitaxial layer on the surface of the device region comprises: a middle portion and edge portions located at both sides of the middle portion;
wherein the first direction is parallel to the first surface and perpendicular to a forming direction of the deep trench; the thickness of the edge portion is less than the thickness of the middle portion, and the edge portion is the non-absorbent window structure.
8. The method of manufacturing of claim 1, further comprising:
patterning the epitaxial layer to form a ridge waveguide structure;
forming a first electrode on one side of the ridge waveguide structure, which faces away from the epitaxial layer;
and forming a second electrode on the second surface of the semiconductor substrate.
9. A semiconductor laser, characterized in that the semiconductor laser comprises:
a semiconductor substrate having opposing first and second surfaces;
the first surface is provided with a plurality of device areas which are sequentially arranged; an isolation region is arranged between two adjacent device regions;
a deep trench located within the isolation region surface;
and the epitaxial layer is positioned on the surface of the device region, and based on the difference of epitaxial growth rates caused by the deep grooves, the epitaxial material composition of the part of the epitaxial layer positioned in the middle area of the device region is different from that of the part of the epitaxial layer positioned close to the edge of the groove, and the thickness of the epitaxial layer is different, so that a non-absorption window structure is formed.
10. A semiconductor laser as claimed in claim 9 wherein the epitaxial layer on the surface of the device region in the first direction comprises: a middle portion and edge portions located at both sides of the middle portion;
wherein the first direction is parallel to the first surface and perpendicular to a forming direction of the deep trench; the thickness of the edge portion is less than the thickness of the middle portion, and the edge portion is the non-absorbent window structure.
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