CN115274709A - Display panel, display device, driving backboard and manufacturing method of driving backboard - Google Patents
Display panel, display device, driving backboard and manufacturing method of driving backboard Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
The invention discloses a display panel, a display device, a driving backboard and a manufacturing method thereof, wherein the driving backboard comprises: a base substrate; the TFT structure layer is arranged on one side of the substrate base plate; the TFT structure layer comprises a first conductive layer and a second conductive layer, the second conductive layer is arranged on one side of the first conductive layer far away from the substrate, and any one of the first conductive layer and the second conductive layer is configured to be connected with a pixel voltage; the electrochromic structure layer is arranged between the first conducting layer and the second conducting layer in a laminated mode; the first side of the electrochromic structure layer is in conductive connection with the first conductive layer, and the second side of the electrochromic structure layer is in conductive connection with the second conductive layer; the electrochromic structure layer is configured to change light transmittance under driving of a pixel voltage. The invention can effectively inhibit the halo phenomenon generated by the display panel.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a display device, a driving back plate and a manufacturing method of the driving back plate.
Background
With the continuous development and progress of display technology, the demands of consumers on display quality are further increased. When a display panel of the prior direct type backlight displays a small graphic picture on a black background, a Halo (Halo) phenomenon still easily occurs, so that the quality of the picture of a display part is low, the visual requirement of a user cannot be met, and the viewing experience is influenced.
Therefore, the current display panel still has the technical problem that the halo phenomenon is difficult to eliminate.
Disclosure of Invention
In view of the above problems, the present invention provides a display panel, a display device, a driving backplane and a manufacturing method thereof, which can effectively suppress the halo phenomenon generated by the display panel.
In a first aspect, the present application provides the following technical solutions through an embodiment:
a driving back plate comprising:
a substrate base plate; the TFT structure layer is arranged on one side of the substrate base plate; the TFT structure layer comprises a first conductive layer and a second conductive layer, the second conductive layer is arranged on one side of the first conductive layer far away from the substrate, and any one of the first conductive layer and the second conductive layer is configured to be switched in a pixel voltage; the electrochromic structure layer is arranged between the first conducting layer and the second conducting layer in a laminated mode; the first side of the electrochromic structure layer is in conductive connection with the first conducting layer, and the second side of the electrochromic structure layer is in conductive connection with the second conducting layer; the electrochromic structure layer is configured to change light transmittance under the driving of the pixel voltage.
Optionally, the first conductive layer is configured to be switched in a pixel voltage, the first conductive layer includes a pixel electrode layer, and the second conductive layer includes a common electrode layer; the electrochromic structure layer is arranged between the pixel electrode layer and the common electrode layer; the pixel electrode layer is in conductive connection with the first side of the electrochromic structure layer, and the common electrode layer is in conductive connection with the second side of the electrochromic structure layer.
Optionally, the first conductive layer is configured to be connected to a pixel voltage, the first conductive layer includes a gate layer, the TFT structure layer further includes a pixel electrode layer, and the gate layer is electrically connected to the pixel electrode layer; the second conducting layer comprises a public electrode layer, and the electrochromic structure layer is arranged between the gate layer and the public electrode layer; the grid layer is in conductive connection with the first side of the electrochromic structure layer, and the public electrode layer is in conductive connection with the second side of the electrochromic structure layer.
Optionally, the first conductive layer is configured to switch in a pixel voltage; the electrochromic structure layer comprises: an ion storage layer, an electrolyte layer, and a discoloration layer; the ion storage layer is arranged on one side of the first conducting layer, which is far away from the substrate, the electrolyte layer is arranged on one side of the ion storage layer, which is far away from the substrate, and the discoloration layer is arranged on one side of the electrolyte layer, which is far away from the substrate; the ion storage layer is in conductive connection with the first conducting layer, and the color changing layer is in conductive connection with the second conducting layer.
Optionally, the first conductive layer is configured to switch in a pixel voltage; the electrochromic structure layer comprises a third conductive layer, a color-changing functional layer and a fourth conductive layer; the third conducting layer is arranged on one side, far away from the substrate, of the first conducting layer, the color-changing functional layer is arranged on one side, far away from the substrate, of the third conducting layer, and the fourth conducting layer is arranged on one side, far away from the substrate, of the color-changing functional layer; the third conductive layer is electrically connected to the first conductive layer, and the fourth conductive layer is electrically connected to the second conductive layer.
Optionally, the TFT structure layer further includes: a transistor layer; the transistor layer is arranged between the first conducting layer and the second conducting layer, and the electrochromic structure layer is arranged between the first conducting layer and the transistor layer.
Optionally, the TFT structure layer is divided into a plurality of transistor unit areas, and the electrochromic structure layer is divided into a plurality of color-changing unit areas; the transistor unit areas correspond to the color change unit areas one by one.
In a second aspect, based on the same inventive concept, the present application provides the following technical solutions through an embodiment:
a display panel, comprising: a backlight, a color-developing functional layer, and the driving backplane of any of the first aspects; the color-developing functional layer is arranged on one side of the TFT structure layer far away from the substrate, and is used for defining sub-pixels and displaying colors; the backlight source is arranged on one side, far away from the TFT structure layer, of the substrate base plate.
In a third aspect, based on the same inventive concept, the present application provides the following technical solutions through an embodiment:
a display device, comprising: the driving backplane of any of the preceding first aspects, or the display panel of the preceding second aspect.
In a fourth aspect, based on the same inventive concept, the present application provides the following technical solutions through an embodiment:
a method of manufacturing a driving backplate, comprising:
providing a substrate base plate; forming a first conductive layer of the TFT structure layer on one side of the substrate; forming an electrochromic structure layer on one side of the first conducting layer far away from the substrate; the first side of the electrochromic structure layer is in conductive connection with the first conducting layer; forming a second conductive layer of the TFT structure layer on one side of the electrochromic structure layer far away from the substrate; either the first conducting layer or the second conducting layer is configured to be switched in a pixel voltage, the second side of the electrochromic structural layer is in conductive connection with the second conducting layer, and the electrochromic structural layer is configured to change light transmittance under the driving of the pixel voltage.
In the driving back plate, the display panel and the display device provided in the embodiments of the present invention, the electrochromic structure layer is disposed between the first conductive layer and the second conductive layer of the TFT structure layer, so that the wiring design of the TFT structure layer can be partially utilized, and the manufacturing cost is reduced. Meanwhile, any one of the first conducting layer and the second conducting layer is connected with pixel voltage, so that the electrochromic structure layer can be driven synchronously with the TFT under the driving of the pixel voltage, and the light transmittance is synchronously adjusted through the difference of the pixel voltage, so that the halo phenomenon is effectively reduced or eliminated.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating a display panel with halo defects according to the prior art;
FIG. 2 is a schematic structural diagram of a first driving backplate according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a second driving backplate according to an embodiment of the present invention;
FIG. 3A is a schematic structural diagram of a third driving backplate according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a driving backplane implementing a non-HDR mode according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a driving backplane according to an embodiment of the present invention to implement an HDR mode;
FIG. 6 is a schematic structural diagram of an electrochromic structure layer according to an embodiment of the invention;
FIG. 7 is a schematic diagram of a fourth driving backplate according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 9 is a flowchart illustrating a method for manufacturing a driving backplate according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions, layers and their relative sizes, positional relationships are shown in the drawings as examples only, and in practice deviations due to manufacturing tolerances or technical limitations are possible, and a person skilled in the art may additionally design regions/layers with different shapes, sizes, relative positions according to the actual needs.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
When the display panel of the present direct type backlight is Local dimming (Local dimming), the lamp beads of the backlight source are controlled in different areas, and thus defects such as halation easily occur. For example, when a small graphic picture is displayed on a black background, the corresponding bead regions of the graphic picture are all turned on. Certain light can also penetrate out around the graphic picture, so that the graphic picture has a halo phenomenon, and the picture quality is reduced. As shown in fig. 1, when a region 11 of a backlight 10 in a display panel emits light and only pixels corresponding to the region 11 are driven, light is transmitted through a region other than a TFT (Thin Film Transistor) array substrate 12 corresponding to the region 11, and finally, a halo defect occurs after the light passes through a color filter substrate 13. The driving substrate, the display panel and the display device provided by the invention solve the technical problems by utilizing the adjustable transmittance of the electrochromic material. Electrochromism is the purpose that the material achieves color change by injecting or extracting external electric charges (ions or electrons) and changing transmittance, and is represented as reversible change of color and transparency on appearance performance. Specifically, the electrochromic material used in the present invention may be an inorganic electrochromic material, such as a transition metal oxide or hydrate; but also organic electrochromic materials, such as organic small-molecule electrochromic materials and high-molecule electrochromic materials, and the like. The organic electrochromic material has the advantages of high color changing speed, strong memory effect, low energy consumption, color diversity, high transmittance difference value in different states and the like. According to the driving back plate, the display panel and the display device, the electrochromic structure layer is arranged in the TFT structure layer and is driven by the pixel voltage, so that the electrochromic structure layer and a transistor correspondingly formed in the TFT structure layer can be simultaneously turned on or off, the transistor and the electrochromic structure layer are simultaneously driven, the light transmittance is synchronously adjusted, and the halo phenomenon can be well inhibited. The general inventive concept is further illustrated and described below by means of specific examples.
Referring to fig. 2, in an embodiment of the invention, a driving backplane 100 is provided, including: a substrate 110, a TFT structure layer 120, and an electrochromic structure layer 130. The TFT structure layer 120 is disposed on one side of the substrate 110, the TFT structure layer 120 includes a first conductive layer 121 and a second conductive layer 122, the second conductive layer 122 is disposed on one side of the first conductive layer 121 away from the substrate 110, and either one of the first conductive layer 121 and the second conductive layer 122 is configured to be connected to a pixel voltage, which is a voltage for driving the sub-pixel to emit light. The electrochromic structure layer 130 is arranged between the first conductive layer 121 and the second conductive layer 122 in a lamination mode; the first side of the electrochromic structure layer 130 is conductively connected with the first conductive layer 121, and the second side of the electrochromic structure layer 130 is conductively connected with the second conductive layer 122; the electrochromic structure layer 130 is configured to change light transmittance under the driving of a pixel voltage.
In this embodiment, since the electrochromic structure layer 130 is disposed between the first conductive layer 121 and the second conductive layer 122 of the TFT structure layer 120, the wiring design of the TFT structure layer 120 can be partially utilized, and the manufacturing cost is reduced. Meanwhile, since any one of the first conductive layer 121 and the second conductive layer 122 is connected to the pixel voltage, the electrochromic structure layer 130 can be driven synchronously with the TFT under the driving of the pixel voltage, and the light transmittance is synchronously adjusted according to the difference of the pixel voltage, thereby effectively reducing or eliminating the halo phenomenon.
It should be noted that, in this embodiment, the setting direction of the electrochromic structure layer 130 may be adjusted based on the configurations of the first conductive layer 121 and the second conductive layer 122, for example, if the first conductive structure layer is configured to be switched in a pixel voltage, the first side of the electrochromic structure layer 130 is a driving side, and the first side of the electrochromic structure layer 130 is closer to the substrate 110; if the second conductive structure layer is configured to be connected to the pixel voltage, the second side of the electrochromic structure layer 130 is a driving side, and the second side of the electrochromic structure layer 130 is closer to the substrate 110; that is, the electrochromic structure layer 130 is disposed in opposite directions in both cases.
In some implementations, a pixel may include three color sub-pixels of red, green, and blue, and thus, the TFT structure layer 120 is divided into a plurality of transistor unit regions, each corresponding to one sub-pixel. Correspondingly, the electrochromic structure layer 130 is also divided into a plurality of color-changing unit areas, and the transistor unit areas and the color-changing unit areas are in one-to-one correspondence, so that the light transmittance of each sub-pixel can be accurately controlled, and the halo eliminating effect is improved.
In this embodiment, the first conductive layer 121 can be used as an electrode layer configured to be connected to a pixel voltage, and a description will be given based on this. The implementation of the second conductive layer 122 as an electrode layer configured to be connected to a pixel voltage can be understood by reference, and will not be described in detail.
The base substrate 110 may be a transparent base substrate 110, for example, a glass substrate.
The TFT structure layer 120 is a structure layer for forming a transistor driving array including driving transistors arranged in an array. The TFT structure layer 120 includes a first conductive layer 121, a second conductive layer 122, and a transistor layer 123. The first conductive layer 121, the transistor layer 123, and the second conductive layer 122 are sequentially stacked.
Referring to fig. 3, in some implementations, the first conductive layer 121 includes a pixel electrode layer (pixel electrode) 221, that is, the first conductive layer 121 can be implemented by using the pixel electrode layer 221. The second conductive layer 122 includes a common electrode layer (com electrode) 222, that is, the second conductive layer 122 may be implemented using the common electrode layer 222. A pixel electrode in the pixel electrode layer 221 and a corresponding common electrode in the common electrode layer 222 can be used to correspondingly drive a sub-pixel. The pixel electrode layer 221 and the common electrode layer 222 can be made of a conventional transparent conductive material, for example, an ITO (indium tin oxide) material. Further, the electrochromic structure layer 130 is disposed between the pixel electrode layer 221 and the common electrode layer 222; the pixel electrode layer 221 is electrically connected to the first side of the electrochromic structure layer 130, and the common electrode layer 222 is electrically connected to the second side of the electrochromic structure layer 130. The electrochromic structure layer 130 can be driven to change color by the voltage difference between the pixel electrode layer 221 and the common electrode layer 222, so that the light transmittance is changed. In this implementation, the TFT structure layer 120 further includes a Gate layer (Gate layer) 210, where the Gate layer 210 is configured to be connected to a Gate driving voltage, the Gate layer 210 is disposed between the transistor layer 123 and the electrochromic structure layer 130, and the Gate layer 210 can be powered on simultaneously with the Gate layer 210 when the pixel electrode is powered on in the process of driving the electrochromic structure layer 130, so as to implement synchronous driving of the transistor driving array and the electrochromic structure layer 130.
Referring to fig. 3A, in some implementations, the first conductive layer 121 includes a gate layer 310, that is, the first conductive layer 121 may be implemented by using the gate layer 310. The TFT structure layer 120 further includes a pixel electrode layer 321, and the gate electrode layer 310 is electrically connected to the pixel electrode layer 321, so as to ensure that the gate electrode layer 310 and the pixel electrode layer 321 are powered on simultaneously. The second conductive layer 122 includes a common electrode layer, that is, the second conductive layer 122 may be implemented using a common electrode layer 322. The electrochromic structure layer 130 is disposed between the gate layer 310 and the common electrode layer. The gate layer 310 is electrically connected to the first side of the electrochromic structure layer 130, and the common electrode layer is electrically connected to the second side of the electrochromic structure layer 130. In this implementation, it is first ensured that the transistor driver array and the electrochromic structure layer 130 are driven synchronously; meanwhile, since the voltage of the gate electrode layer 310 is higher than that of the pixel electrode layer 321, more accurate driving accuracy can be achieved when the electrochromic structure layer 130 is driven.
It can be understood that the color-changing unit corresponding to each color-changing unit area and the driving transistor corresponding to each transistor unit area can be formed into a parallel connection structure through the structural arrangement. When it is necessary to control the driving transistors of the driving backplane 100 to turn on, the gate layer 310 and the electrochromic structure layer 130 can be powered up simultaneously, and the voltage magnitude change of the gate layer 310 is consistent with the pixel voltage change of the pixel electrode layer 321. The electrochromic structure layer 130 has a black state and a transparent state, while being capable of changing its transparency based on a difference in driving voltage. For example, when the pixel voltage driving a certain sub-pixel is the voltage corresponding to the gray level L255, the color-changing unit corresponding to the sub-pixel in the electrochromic structure layer 130 can be changed to a completely transparent state, and other color-changing units without the pixel voltage applied thereto will be realized. When the TFT applies a voltage, a voltage is applied to the electrochromic structure layer 130 connected in parallel to make it transparent, and the other part of the electrochromic structure layer 130 to which the pixel voltage is not applied maintains a black non-transparent state. Therefore, the light penetrating through the sub-pixels can be weakened, the brightness control and adjustment can be realized, and the halo phenomenon can be inhibited.
In addition, in this embodiment, the relationship between the transparency of the electrochromic structure and the pixel voltage can be controlled by the material for manufacturing the electrochromic structure layer 130, the thickness of the film formed by different materials, and other parameters, which are not described in detail in this embodiment.
In some implementations, the display panel to which the driving backplane 100 is applied has an HDR (High Dynamic Range) mode. The implementation can be as follows:
the driving backplate 100 may further include a pattern control conductive layer, which may be disposed between the substrate base plate 110 and the pixel electrode layer to prevent influence on the fabrication of other layers. Of course, the organic light emitting device can also be disposed between other film layers, for example, between the pixel electrode layer and the gate electrode layer. The mode control conductive layer is conductively connected to the first side of the electrochromic structural layer 130 through a first switching transistor. Meanwhile, a second switching transistor is further disposed between the first conductive layer 121 and the first side of the electrochromic structure layer 130, and the first conductive layer 121 and the second side of the electrochromic structure layer 130 are electrically connected through the second switching transistor. In manufacturing, the first switching transistor and the second switching transistor may be formed simultaneously when manufacturing the transistor layer 123. The connection can be performed by using a via hole and the like without limitation. The mode control conductive layer may be configured to be applied with a constant predetermined voltage that may drive the electrochromic structure layer 130 to a maximum transparent state, such as a fully transparent state. When the driving backplane 100 works, if the display panel needs to work in the non-HDR mode, the first switching transistor may be controlled to be turned on, the second switching transistor is turned off, at this time, the electrochromic structure layer 130 may be changed into the maximum transparent state under the driving of the preset voltage, light generated by the backlight 410 may pass through without blocking, and finally, light is emitted through the pixel structure layer 420, as shown in fig. 4; if the display panel needs to work in the HDR mode, the first switch transistor may be controlled to be turned off, and the second switch transistor may be controlled to be turned on, at this time, the electrochromic structure layer 130 works under the driving of the pixel voltage, and is synchronous with the working state of the driving transistor. That is, the color-changing units corresponding to the undriven driving transistors are all black, so as to effectively block light, realize HDR mode, and avoid generating halo phenomenon, as shown in fig. 5, wherein the light emitted from the region 411 of the backlight 410 can be completely blocked at the position corresponding to the undriven driving transistors.
The transistor layer 123 in the TFT structure layer 120 may include a source-drain metal layer, a semiconductor layer, an insulating layer, and the like. A corresponding drive transistor may be formed through transistor layer 123. The specific implementation of the transistor layer 123 may refer to a driving transistor of the driving backplane 100 in the prior art, and is not described herein again.
The electrochromic structure layer 130 realizes different light transmittances under different voltage driving, and a specific implementation of the electrochromic structure layer 130 is described below.
Referring to fig. 6, in some implementations, the electrochromic structure layer 130 includes a third conductive layer, a color-changing functional layer, and a fourth conductive layer; the third conductive layer may be disposed on a side of the first conductive layer 121 away from the base substrate 110, the color-changing functional layer is disposed on a side of the third conductive layer away from the base substrate 110, and the fourth conductive layer is disposed on a side of the color-changing functional layer away from the base substrate 110; the third conductive layer is electrically connected to the first conductive layer 121, and the fourth conductive layer is electrically connected to the second conductive layer 122. The color-changing functional layer may include an ion storage layer, an electrolyte layer, and a color-changing layer, which are sequentially stacked, and the functional functions of each layer may be understood with reference to the prior art, which is not described herein in detail.
Of course, in some implementations, the electrochromic structure layer 130 may not include the third conductive layer and the fourth conductive layer, and the first conductive layer 121 may be used instead of the third conductive layer and the second conductive layer 122 may be used instead of the fourth conductive layer, as shown in fig. 7. Specifically, the electrochromic structure layer 130 may include: an ion storage layer, an electrolyte layer, and a discoloration layer. The ion storage layer is arranged on one side of the first conductive layer 121 far away from the substrate 110, the electrolyte layer is arranged on one side of the ion storage layer far away from the substrate 110, and the discoloring layer is arranged on one side of the electrolyte layer far away from the substrate 110; the ion storage layer is electrically conductively connected to the first conductive layer 121, and the color changing layer is electrically conductively connected to the second conductive layer 122. By adopting the implementation mode, the electrochromic structure layer 130 can be further thinned, so that the thickness increase of the driving backboard 100 is controlled.
It should be noted that, in the driving back plate 100, the above-mentioned film layer structure is not all the film layer structure of the driving back plate 100, for example, a corresponding insulating layer may be disposed between two conductor film layers, and in addition, a passivation layer, a planarization layer, and the like may also be included.
In summary, in the driving backplane 100 of the present embodiment, the electrochromic structure layer 130 can be turned on or turned off simultaneously with the driving transistor correspondingly formed in the TFT structure layer 120, so that the driving transistor and the electrochromic structure layer 130 are driven simultaneously, and the light transmittance is adjusted synchronously, thereby better suppressing the halo phenomenon.
Referring to fig. 8, based on the same inventive concept, in an embodiment of the present invention, a display panel is further provided, including: a backlight, a color-developing functional layer, and the driving back plate 100 described in any of the previous embodiments.
The color development functional layer is arranged on one side of the TFT structure layer, which is far away from the substrate, and is used for defining the sub-pixels and displaying colors; and the backlight source is arranged on one side of the substrate far away from the TFT structure layer.
In some implementations, the color-rendering functional layer may include a pixel definition layer, a liquid crystal, a color film layer, and the like. The pixel definition layer is arranged on one side of the TFT structure layer far away from the substrate base plate, the color film layer is arranged on one side of the principle substrate base plate of the pixel definition layer, and the liquid crystal can be filled between the pixel definition layer and the color film layer.
In some implementations, the display panel is a direct-lit backlight display panel. Specifically, the display panel may be a Mini LED (sub-millimeter light emitting diode) display panel; an LCD display panel may also be used.
For example, a BD-CELL type display panel is possible. The BD-CELL technology is a scheme formed by bonding an upper OC (Open CELL, liquid crystal panel) and a lower OC (Open CELL) through a related technology, wherein a Main panel (Main CELL) is arranged on the upper layer and mainly focuses on color control; the Sub-panel (Sub Cell) is a black and white screen at the lower layer, is mainly used for fine dimming, and presents high contrast and rich dark state details. When the display panel is applied to a BD-CELL type display panel, the sub-panel can be alternatively realized by using the driving backboard 100 in the application, and the color-developing functional layer can be realized by using the existing realization mode of the main panel. The display panel of the embodiment realizes fine dimming, and compared with the BD-CELL type display panel in the prior art, the thickness of the module can be effectively reduced.
In the present embodiment, the beneficial effects and the implementation details that are not mentioned can be referred to the related descriptions of the driving back plate 100 in the foregoing embodiments, and are not described herein again.
Based on the same inventive concept, the embodiment of the present invention further provides a display device, including: any of the driving backplanes in the preceding embodiments, or comprising the display panel as described in any of the preceding embodiments. The display device in this embodiment may be a mobile phone, a television, a computer monitor, a notebook computer, an advertisement machine, a tablet computer, etc., without limitation.
Referring to fig. 9, based on the same inventive concept, the present embodiment further provides a method for manufacturing a driving backplate, where the method for manufacturing a driving backplate includes:
step S10: providing a substrate base plate;
step S20: forming a first conductive layer of the TFT structure layer on one side of the substrate base plate;
step S30: forming an electrochromic structure layer on one side of the first conducting layer far away from the substrate; the first side of the electrochromic structure layer is in conductive connection with the first conducting layer;
step S40: forming a second conductive layer of the TFT structure layer on one side of the electrochromic structure layer far away from the substrate; either the first conducting layer or the second conducting layer is configured to be switched in a pixel voltage, the second side of the electrochromic structural layer is in conductive connection with the second conducting layer, and the electrochromic structural layer is configured to change light transmittance under the driving of the pixel voltage.
In steps S10-S40, the semiconductor processing method includes, but is not limited to, chemical vapor deposition, wet etching, dry etching, and the like, without limitation. The structural relationship and specific implementation of each finally formed film layer can be referred to the embodiment of the driving back plate; the film, the film material and the structure that are not mentioned can be realized by the prior art, and are not described in detail herein.
It should be noted that, in the method for manufacturing a driving backplate provided in this embodiment, beneficial effects generated by the structures formed in the respective steps are already explained in the foregoing embodiment related to the driving backplate, and specific reference may be made to the foregoing embodiment related to the driving backplate, and details are not repeated in this embodiment.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. Further, although the embodiments are described separately above, this does not mean that the measures in the respective embodiments cannot be used advantageously in combination.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A drive backplate, comprising:
a base substrate;
the TFT structure layer is arranged on one side of the substrate base plate; the TFT structure layer comprises a first conductive layer and a second conductive layer, the second conductive layer is arranged on one side of the first conductive layer far away from the substrate, and any one of the first conductive layer and the second conductive layer is configured to be switched in a pixel voltage; and
the electrochromic structure layer is arranged between the first conducting layer and the second conducting layer in a laminated mode; the first side of the electrochromic structure layer is in conductive connection with the first conductive layer, and the second side of the electrochromic structure layer is in conductive connection with the second conductive layer; the electrochromic structure layer is configured to change light transmittance under the driving of the pixel voltage.
2. The driving backplane of claim 1, wherein the first conductive layer is configured to be switched in a pixel voltage, the first conductive layer comprising a pixel electrode layer, the second conductive layer comprising a common electrode layer; the electrochromic structure layer is arranged between the pixel electrode layer and the common electrode layer;
the pixel electrode layer is in conductive connection with the first side of the electrochromic structure layer, and the common electrode layer is in conductive connection with the second side of the electrochromic structure layer.
3. The driving backplane of claim 1, wherein the first conductive layer is configured to be switched in a pixel voltage, the first conductive layer comprising a gate layer, the TFT structure layer further comprising a pixel electrode layer, the gate layer being conductively connected with the pixel electrode layer; the second conducting layer comprises a public electrode layer, and the electrochromic structure layer is arranged between the gate layer and the public electrode layer;
the gate layer is electrically connected with the first side of the electrochromic structure layer, and the common electrode layer is electrically connected with the second side of the electrochromic structure layer.
4. The driving backplane of claim 1, wherein the first conductive layer is configured to switch in a pixel voltage; the electrochromic structure layer comprises: an ion storage layer, an electrolyte layer, and a color changing layer; the ion storage layer is arranged on one side of the first conducting layer, which is far away from the substrate, the electrolyte layer is arranged on one side of the ion storage layer, which is far away from the substrate, and the discoloration layer is arranged on one side of the electrolyte layer, which is far away from the substrate;
the ion storage layer is in conductive connection with the first conducting layer, and the color changing layer is in conductive connection with the second conducting layer.
5. The driving backplane of claim 1, wherein the first conductive layer is configured to switch in a pixel voltage; the electrochromic structure layer comprises a third conductive layer, a color-changing functional layer and a fourth conductive layer; the third conducting layer is arranged on one side, far away from the substrate, of the first conducting layer, the color-changing functional layer is arranged on one side, far away from the substrate, of the third conducting layer, and the fourth conducting layer is arranged on one side, far away from the substrate, of the color-changing functional layer;
the third conductive layer is electrically connected to the first conductive layer, and the fourth conductive layer is electrically connected to the second conductive layer.
6. The driving backplane of claim 1, wherein the TFT structure layer further comprises: a transistor layer;
the transistor layer is arranged between the first conducting layer and the second conducting layer, and the electrochromic structure layer is arranged between the first conducting layer and the transistor layer.
7. The driving backplane of claim 1, wherein the TFT structure layer is divided into a plurality of transistor cell areas, and the electrochromic structure layer is divided into a plurality of color cell areas; the transistor unit areas and the color change unit areas are in one-to-one correspondence.
8. A display panel, comprising: a backlight, a color-developing functional layer, and the driving backplane of any of claims 1-6;
the color-developing functional layer is arranged on one side of the TFT structure layer far away from the substrate, and is used for defining sub-pixels and displaying colors;
the backlight source is arranged on one side, far away from the TFT structure layer, of the substrate base plate.
9. A display device, comprising: the driving backplane of any one of claims 1 to 7, or comprising the display panel of claim 8.
10. A method of manufacturing a driving backplate, comprising:
providing a substrate base plate;
forming a first conductive layer of the TFT structure layer on one side of the substrate base plate;
forming an electrochromic structure layer on one side of the first conducting layer far away from the substrate; the first side of the electrochromic structure layer is in conductive connection with the first conducting layer;
forming a second conductive layer of the TFT structure layer on one side of the electrochromic structure layer far away from the substrate; either the first conducting layer or the second conducting layer is configured to be switched in a pixel voltage, the second side of the electrochromic structural layer is in conductive connection with the second conducting layer, and the electrochromic structural layer is configured to change light transmittance under the driving of the pixel voltage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210952747.1A CN115274709A (en) | 2022-08-09 | 2022-08-09 | Display panel, display device, driving backboard and manufacturing method of driving backboard |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210952747.1A CN115274709A (en) | 2022-08-09 | 2022-08-09 | Display panel, display device, driving backboard and manufacturing method of driving backboard |
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| CN115274709A true CN115274709A (en) | 2022-11-01 |
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| CN202210952747.1A Pending CN115274709A (en) | 2022-08-09 | 2022-08-09 | Display panel, display device, driving backboard and manufacturing method of driving backboard |
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| CN (1) | CN115274709A (en) |
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- 2022-08-09 CN CN202210952747.1A patent/CN115274709A/en active Pending
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