CN115188776A - 8-channel structure based on polarization beam splitter and photoelectric detector and manufacturing method - Google Patents
8-channel structure based on polarization beam splitter and photoelectric detector and manufacturing method Download PDFInfo
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Abstract
The invention provides an 8-channel structure based on a polarization beam splitter and a photoelectric detector and a manufacturing method thereof. The design of 8 channels effectively improves the bandwidth of the system and meets the requirement of mass data transmission. The invention also improves the structure of the photoelectric detector, designs the photosensitive layer of the photoelectric detector into a circular truncated cone shape, balances the influence factors of current transmission and current expansion and ensures that the photogenerated carriers are diffused in a very short time so as to quickly conduct the circuit. In addition, the invention also provides a method for testing the polarization isolation degree of the 8-channel structure, the polarization isolation degree of the system is obtained through the photocurrent value of the photoelectric detector, the testing process is simplified, and errors such as loss and the like caused when the optical power is tested are avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor silicon photons, in particular to an 8-channel structure based on a polarization beam splitter and a photoelectric detector and a manufacturing method thereof.
Background
Silicon photonics on silicon-on-insulator (SOI) platforms have evolved over the past few decades due to their compact footprint, high integration, low power consumption, and compatibility with Complementary Metal Oxide Semiconductor (CMOS) processes. Silicon photonics is a low-cost, high-speed optical communication technology based on silicon photonics. Based on a silicon-based substrate material, a CMOS process is utilized, an integrated circuit represented by micro-electronics and a photon technology are combined, electronic information is replaced by a laser beam for transmitting data, and information transmission is carried out by silicon optical integration and light for replacing electricity, so that the cost of the integrated circuit is greatly reduced. At the light path receiving end of the photonic device, a photoelectric detector is a common device, and the photoelectric detector can convert an optical signal into an electrical signal, so that photoelectric conversion at the light path receiving end is realized.
Polarization sensitivity is a serious problem in the practical application of photodetectors. In SOI waveguides, si and SiO 2 The refractive index difference of the optical fiber is large, so that the effective refractive index difference of TE and TM modes is large, and devices such as a photoelectric detector and the like are extremely sensitive to the polarization state. Although the polarization state of light is useful information, it is in many cases a disturbing information, and unnecessary polarization causes errors, reduces measurement accuracy, and affects the result of the photodetector. Meanwhile, it is also necessary to try to reduce the response time of the photodetector to reduce the relaxation, and to ensure that the photogenerated carriers in the detector have a very short diffusion time to make the circuit conduct quickly. In addition, the bandwidth of the existing device cannot meet the requirement of large-scale integrated chip data transmission.
Based on the defects in the prior art, an 8-channel structure based on a polarization beam splitter and a photoelectric detector and a manufacturing method thereof are provided, and the 8-channel structure is really necessary.
Disclosure of Invention
In order to meet the above technical requirements, the present invention provides an 8-channel structure based on a polarization beam splitter and a photodetector, and a manufacturing method thereof, which are used to reduce the polarization sensitivity of a system and the response time of the photodetector, and simultaneously improve the bandwidth to meet the requirement of mass data transmission.
The invention provides an 8-channel structure based on a polarization beam splitter and a photoelectric detector, wherein the 8-channel structure at least comprises:
the optical fiber coupler comprises an SOI (silicon on insulator) substrate, a coupler and a coupler, wherein the SOI substrate comprises a silicon substrate, a dielectric layer and top silicon which are sequentially overlapped, and the SOI substrate comprises a polarization beam splitter area and a photoelectric detector area;
the polarization beam splitter region comprises 8 waveguides which are arranged at intervals and obtained by imaging the top silicon, the waveguides comprise a single-mode input waveguide, a double-etched waveguide and a Y-branch waveguide which are connected in sequence, and the Y-branch waveguide comprises a first branch waveguide and a second branch waveguide;
the photoelectric detector area comprises 16 photoelectric tubes, and the 16 photoelectric tubes comprise 8 first photoelectric tubes arranged corresponding to the first branch waveguides and 8 second photoelectric tubes arranged corresponding to the second branch waveguides;
a silica cladding covering the polarizing beam splitter region and photodetector region to form the 8-channel structure.
Optionally, the photo transistor includes a silicon layer, a photosensitive layer, an N + -type doped region, and a metal plug;
the silicon layer comprises a P-type doped region, 2P + type doped regions and an undoped silicon layer, wherein the 2P + type doped regions are in contact with the dielectric layer and positioned on two sides of the P-type doped region, the photosensitive layer is positioned on the P-type doped region, the undoped silicon layer is positioned on the upper portion of the P-type doped region and positioned on two sides of the photosensitive layer, the N + type doped region is formed on the top of the photosensitive layer, and the P-type doped region is connected with the Y-branch waveguide;
the metal plugs comprise a first metal plug, a second metal plug and a third metal plug, the metal plugs are exposed out of the silicon dioxide cladding layer, the first metal plug is electrically connected with the N + type doped region, and the second metal plug and the third metal plug are respectively electrically connected with the 2P + type doped regions.
Optionally, the photosensitive layer comprises a metal Ge layer, and the photosensitive layer is cylindrical or truncated cone-shaped.
Optionally, the ion doping concentration of the P + type doping region is 1e18-1e20/cm 3 The ion doping concentration of the P-type doping region is 1e14-1e18/cm 3 The ion doping concentration of the N + type doping area is 1e18-1e20/cm 3 。
Optionally, the width of the 8-channel structure is 300 μm to 400 μm, and the spacing distance between the single-mode input waveguides in the 8 waveguides arranged at intervals is 180 μm to 200 μm.
The invention also provides a manufacturing method of the 8-channel structure based on the polarization beam splitter and the photoelectric detector, which comprises the following steps:
providing an SOI substrate, wherein the SOI substrate comprises a silicon substrate, a dielectric layer and top silicon which are sequentially stacked, and the SOI substrate comprises a polarization beam splitter region and a photoelectric detector region;
patterning the top silicon layer, and forming 8 waveguides arranged at intervals in the polarization beam splitter region, wherein the waveguides comprise a single-mode input waveguide, a double-etched waveguide and a Y-branch waveguide which are sequentially connected, and the Y-branch waveguide comprises a first branch waveguide and a second branch waveguide;
forming 16 photoelectric tubes in the photoelectric detector area, wherein the 16 photoelectric tubes comprise 8 first photoelectric tubes arranged corresponding to the first branch waveguides and 8 second photoelectric tubes arranged corresponding to the second branch waveguides;
forming a silica cladding covering the polarizing beam splitter region and the photodetector region.
Optionally, the manufacturing method of the photoelectric tube includes the following steps:
patterning the top silicon layer in the photodetector region and forming a silicon layer by an ion implantation process, the silicon layer comprising: the semiconductor device comprises a P-type doped region, 2P + type doped regions and an undoped silicon layer, wherein the 2P + type doped regions are in contact with the dielectric layer and positioned on two sides of the P-type doped region, the undoped silicon layer is positioned on the upper surface of the P-type doped region, and the P-type doped region is connected with the Y-branch waveguide;
patterning the undoped silicon layer and depositing a photosensitive layer, wherein the photosensitive layer is connected with the P-type doped region;
forming an N + type doped region on the top of the photosensitive layer by ion implantation;
and forming a metal plug in the photoelectric detector region, wherein the metal plug is exposed out of the silicon dioxide cladding layer and comprises a first metal plug electrically connected with the photosensitive layer and a second metal plug and a third metal plug which are respectively electrically connected with the 2P + type doped regions.
Optionally, the photosensitive layer comprises a metal Ge layer, and the photosensitive layer is cylindrical or truncated cone-shaped.
Optionally, the ion doping concentration of the P + type doping region is 1e18-1e20/cm 3 The ion doping concentration of the P-type doping region is 1e14-1e18/cm 3 The ion doping concentration of the N + type doping area is 1e18-1e20/cm 3 。
Optionally, the width of the 8-channel structure is 300 μm to 400 μm, and the spacing distance between the single-mode input waveguides in the 8 waveguides arranged at intervals is 180 μm to 200 μm.
As described above, the 8-channel structure based on the polarization beam splitter and the photodetector of the present invention has the following beneficial effects: the invention effectively combines the photoelectric detector and the polarization beam splitter to form an 8-channel structure, thereby reducing the polarization sensitivity of the system and simultaneously keeping lower loss. The design of 8 channels effectively improves the bandwidth of the system and meets the requirement of mass data transmission. The invention also improves the structure of the photoelectric detector, designs the photosensitive layer of the photoelectric detector into a circular truncated cone shape, balances the influence factors of current transmission and current expansion and ensures that the photogenerated carriers are diffused in a very short time so as to quickly conduct the circuit. In addition, the invention also provides a method for testing the polarization isolation degree of the 8-channel structure, the polarization isolation degree of the system is obtained through the photocurrent value of the photoelectric detector, the testing process is simplified, and errors such as loss and the like caused when the optical power is tested are avoided.
Drawings
FIG. 1 is a schematic top view of an 8-channel structure according to the present invention.
Fig. 2 is an enlarged schematic view of the region H in fig. 1.
FIG. 3 is a schematic cross-sectional view of the channel structure of FIG. 2 at the AB position in the present invention 8.
Fig. 4-9 are schematic cross-sectional views at the CD position in fig. 2 illustrating the steps of the 8-channel structure fabrication method of the present invention.
Fig. 10 is a schematic view showing a device connection structure of an 8-channel structure in the present invention.
Fig. 11 shows the bandwidth test results for the 8-channel structure of the present invention.
FIG. 12 shows the I-V test curves for the 8-channel structure of the present invention.
Description of the element reference numerals
1. Photodetector region
2. Polarizing beam splitter region
11. A first photoelectric cell
12. Second photoelectric cell
21. Waveguide
10. Silicon substrate
20. Dielectric layer
30. Top layer silicon
100. Undoped silicon layer
101 P + type doped region
102 P-type doped region
103. Photosensitive layer
104 N + type doped region
105. Silica cladding
106. Metal plug
201. Single mode input waveguide
202. Dual etch waveguide
203 Y-branch waveguide
2000. Polarization beam splitter
1001. First photodetector
1002. Second photodetector
2031. First branch waveguide
2032. Second branch waveguide
1061. First metal plug
1062. Second metal plug
1063. Third metal plug
Width of L1
L2 spacing
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated. Thus, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated in the figures but may also include deviations in shapes that result, for example, from manufacturing.
Example one
The present embodiment provides an 8-channel structure based on a polarization beam splitter and a photodetector, as shown in fig. 1 to 3 and 9, the 8-channel structure includes:
the optical fiber sensor comprises an SOI (silicon on insulator) substrate, wherein the SOI substrate comprises a silicon substrate 10, a dielectric layer 20 and top silicon 30 which are sequentially stacked, and comprises a polarization beam splitter region 2 and a photoelectric detector region 1;
the polarization beam splitter region 2 includes 8 waveguides 21 arranged at intervals and obtained by patterning the top silicon 30, the waveguides 21 include a single-mode input waveguide 201, a double-etched waveguide 202 and a Y-branch waveguide 203 which are connected in sequence, and the Y-branch waveguide 203 includes a first branch waveguide 2031 and a second branch waveguide 2032;
the photodetector region 1 includes 16 phototubes, and the 16 phototubes include 8 first phototubes 11 corresponding to the first branch waveguide 2031 and 8 second phototubes 12 corresponding to the second branch waveguide 2032;
a silica cladding 105, the silica cladding 105 covering the polarization beam splitter region 2 and the photodetector region 1 to form the 8-channel structure.
As an example, the photocell comprises a silicon layer obtained by patterning the top silicon 30, and a photosensitive layer 103, an N + -type doped region 104 and a metal plug 106; wherein,
the silicon layer comprises a P-type doped region 102, 2P + type doped regions 101 and an undoped silicon layer 100,2, the P + type doped regions 101 are in contact with the dielectric layer 20 and located on two sides of the P-type doped region 102, the photosensitive layer 103 is located on the P-type doped region 102, the undoped silicon layer 100 is located on the upper portion of the P-type doped region 102 and located on two sides of the photosensitive layer 103, the N + type doped region 104 is formed on the top of the photosensitive layer 103, and the P-type doped region 102 of the photoelectric tube is connected with the Y-branch waveguide 203;
the metal plug 106 includes a first metal plug 1061, a second metal plug 1062, and a third metal plug 1063, and the metal plug 106 is exposed from the silicon dioxide cladding 105, the first metal plug 1061 is electrically connected to the N + -type doped region 104, and the second metal plug 1062 and the third metal plug 1063 are electrically connected to 2P + -type doped regions 101, respectively.
As an example, the width L1 of the 8-channel structure is 300 μm to 400 μm, preferably 345 μm; the spacing distance L2 between the single-mode input waveguides 201 in the 8 waveguides 21 arranged at intervals is 180 μm to 200 μm, and preferably 190 μm. Providing a spacing between 8 of said waveguides 21 enables crosstalk to be effectively avoided.
As an example, the photosensitive layer 103 includes a Ge metal layer, and the photosensitive layer 103 may also be in a cylindrical shape, wherein the photosensitive layer 103 is preferably in a truncated cone shape in this embodiment, considering both the current transmission and the current spreading.
Specifically, the photosensitive layer 103 generates carriers and emits photocurrent after receiving illumination, and in order to make the speed of photocurrent transmission as large as possible and thus reduce the response time, it is necessary to make the cross-sectional area of the photosensitive layer 103 in the direction perpendicular to the photocurrent transmission direction as small as possible to reduce current expansion; however, for CMOS circuits, it is necessary to achieve fast turn-on of the source and drain, and the P-type doped region 102 in the present invention is required to spread the carriers generated by the photosensitive layer 103 as much as possible to make the source and drain turn-on fast. Therefore, the truncated cone-shaped photosensitive layer 103 is the most preferable choice in consideration of both current transmission and current spreading. The photosensitive layer 103 having a truncated cone shape or a cylindrical shape may be obtained by etching an inverted truncated cone-shaped hole or a cylindrical hole through a hard mask and then depositing a photosensitive material.
As an example, the thickness of the undoped silicon layer 100 and the P-type doped region 102 is the same as the thickness of the P + -type doped region 101, including 100-400nm, such as 100nm, 200nm, 400nm, etc. Furthermore, the P + type doped region 101 is a heavily doped region, which is intentionally doped, and has an ion doping concentration of 1e18-1e20/cm 3 In this embodiment, the doping concentration is preferably 1e19/cm 3 (ii) a The P-type doped region 102 is a lightly doped region, is intentionally doped, and has an ion doping concentration of 1e14-1e18/cm 3 In this embodiment, the doping concentration is preferably 1e16/cm 3 (ii) a The undoped silicon layer 100 is not doped.
Specifically, the main reason why the P-type doped region 102 is designed as a lightly doped region is to form a schottky contact at the interface of the P-type doped region 102 and the photosensitive layer 103, and an excessively high doping concentration forms an ohmic contact at the interface, and the interface has bidirectional conduction if no barrier exists, and thus has no unidirectional conduction characteristic of a pn junction. Therefore, in order to ensure that the P-type doped region 102 forms a schottky contact at the interface between the P-type doped region 102 and the photosensitive layer 103, the P-type doped region 102 should not have an excessively high doping concentration, and the preferred doping concentration of the P-type doped region 102 in this embodiment is 1e16/cm 3 。
As an example, the N + type doped region 104 has an ion doping concentration of 1e18-1e20/cm 3 In this embodiment, the doping concentration is preferably 1e19/cm 3 。
Specifically, the silicon substrate 10, the dielectric layer 20, the waveguide 21, and the silica cladding 105 constitute a polarization beam splitter 2000, the silicon substrate 10, the dielectric layer 20, the phototube, and the silica cladding 105 constitute a photodetector, and the photodetector includes a first photodetector 1001 and a second photodetector 1002. It should be noted that fig. 3 only shows the second branch waveguide 2032 of the polarization beam splitter 2000, and the first photodetector 1001 has the same structure as the second photodetector 1002 shown in fig. 3, and is not described herein again.
Specifically, the working process of the 8-channel structure is as follows: light enters from the left side of the single-mode input waveguide 201 of the polarization beam splitter 2000, undergoes mode conversion by the double-etched waveguide 202, and finally passes through the first branch waveguide 2031 and the second branch waveguide 2032 of the Y-branch waveguide 203 and reaches the first photodetector 1001 and the second photodetector 1002, respectively. Wherein the single-mode light entering the single-mode input waveguide 201 may be TM0 mode (polarization direction perpendicular to the propagation direction) and TE0 mode (polarization direction parallel to the propagation direction). By using the mode conversion function of the polarization beam splitter 2000, after the TE0 mode is incident to the single-mode input waveguide 201, the TE0 mode is output from the first branch waveguide 2031 of the Y-branch waveguide 203 and then reaches the first photodetector 1001 through the mode conversion of the polarization beam splitter 2000; after the TM0 mode is incident to the single-mode input waveguide 201, the TM0 mode is converted into the TE0 mode by the mode conversion of the polarization beam splitter 2000, and the TE0 mode is output from the second branch waveguide 2032 of the Y branch waveguide 203 and then reaches the second photodetector 1002. Thereby separating the two different polarization states of TE and TM modes according to different propagation directions. In this process, light is incident from the Y-branch waveguide 203 to the P-type doped region 102 and then reaches the bottom surface of the photosensitive layer 103, and due to the truncated cone-shaped structure of the photosensitive layer 103, the bottom surface of the photosensitive layer 103 can have more contact area with the P-type doped region 102, thereby increasing the light receiving area to further reduce the response time.
As shown in fig. 11, which is a bandwidth test result of the 8-channel structure in the present invention, when a loss is-3 dB, a bandwidth of the 8-channel structure is 20GB, which can meet a requirement of a large amount of data transmission.
As shown in fig. 12, which is an I-V test curve of the 8-channel structure of the present invention, from the test result, the I-V curve of the 8-channel structure conforms to the characteristics of the semiconductor device and shows a smaller reverse leakage current, which indicates that the 8-channel structure has better electrical properties.
The embodiment also provides a manufacturing method of an 8-channel structure based on the polarization beam splitter and the photodetector, and the manufacturing method comprises the following steps:
an SOI substrate is provided, which includes a silicon substrate 10, a dielectric layer 20, and a top silicon 30 stacked in sequence, and which includes a polarization beam splitter region 2 and a photodetector region 1, as shown in fig. 1 and 4.
Patterning the top silicon 30, forming 8 waveguides 21 arranged at intervals in the polarization beam splitter region, where the waveguides 21 include a single-mode input waveguide 201, a double-etched waveguide 202, and a Y-branch waveguide 203, which are connected in sequence, and the Y-branch waveguide 203 includes a first branch waveguide 2031 and a second branch waveguide 2032, as shown in fig. 1;
16 photoelectric cells are formed in the photodetector region 1, and the 16 photoelectric cells include 8 first photoelectric cells 11 corresponding to the first branch waveguide 2031 and 8 second photoelectric cells 12 corresponding to the second branch waveguide 2032;
a silica cladding 105 is formed, the silica cladding 105 covering the polarization beam splitter region 2 and the photodetector region 1, as shown in fig. 3.
As an example, the manufacturing method of the photoelectric tube includes the following steps:
patterning the top silicon 30 in the photodetector region 1 and forming a silicon layer by an ion implantation process, the silicon layer including: a P-type doped region 102, 2P + -type doped regions 101 and an undoped silicon layer 100, wherein 2P + -type doped regions 101 are in contact with the dielectric layer 20 and located at two sides of the P-type doped region 102, the undoped silicon layer 100 is located on the upper surface of the P-type doped region 102, wherein the P-type doped region 102 is connected to the Y-branch waveguide 203, as shown in fig. 3 and 5;
patterning the undoped silicon layer 100 and depositing a photosensitive layer 103, wherein the photosensitive layer 103 is connected to the P-type doped region 102, as shown in fig. 6 and 7;
forming an N + type doped region 104 on top of the photosensitive layer 103 by ion implantation, as shown in fig. 8;
a metal plug 106 is formed in the photodetector region 1, the metal plug 106 is exposed from the silicon dioxide cladding layer 105, and the metal plug 106 includes a first metal plug 1061 electrically connected to the photosensitive layer 103 and second and third metal plugs 1062 and 1063 electrically connected to 2P + -type doped regions 101, as shown in fig. 9.
Specifically, the width L1 of the 8-channel structure is 300-400 μm, preferably 345 μm; the spacing distance L2 between the single-mode input waveguides 201 of the 8 waveguides 21 arranged at intervals is 180 μm to 200 μm, preferably 190 μm. Providing a space between 8 of said waveguides 21 enables to effectively avoid crosstalk.
By way of example, the photosensitive layer 103 may include a Ge metal layer, but is not limited thereto, and the shape of the photosensitive layer 103 may also be a cylinder, preferably a truncated cone as shown in the present embodiment, wherein the truncated cone of the photosensitive layer 103 is selected by considering both the current transmission and the current spreading.
Specifically, the photosensitive layer 103 generates carriers and emits photocurrent after receiving illumination, and in order to make the speed of photocurrent transmission as large as possible and thus reduce the response time, the cross-sectional area of the photosensitive layer 103 in the direction perpendicular to the photocurrent transmission direction needs to be as small as possible to reduce the current spreading; however, for CMOS circuits, it is necessary to achieve fast turn-on of the source and drain, and the P-type doped region 102 in the present invention is required to spread the carriers generated by the photosensitive layer 103 as much as possible to make the source and drain turn-on fast. Therefore, the truncated cone-shaped photosensitive layer 103 is the most preferable choice in consideration of both current transmission and current spreading. The photosensitive layer 103 having a truncated cone shape or a column shape can be obtained by etching an inverted truncated cone-shaped hole or a column-shaped hole through a hard mask and then depositing a photosensitive material, which is not limited herein.
As an example, the thickness of the undoped silicon layer 100 and the P-type doped region 102 is the same as the thickness of the P + -type doped region 101, and is 100-400nm. The P + type doped region 101 is a heavily doped region, belongs to intentional doping, and has an ion doping concentration of 1e18-1e20/cm 3 In this embodiment, the doping concentration is preferably 1e19/cm 3 (ii) a The P-type doped region 102 is a lightly doped region, is intentionally doped, and has an ion doping concentration of 1e14-1e18/cm 3 In the present embodiment, the doping concentration is preferably 1e16/cm 3 (ii) a The undoped silicon layer 100 is not doped.
Specifically, the main reason why the P-type doped region 102 is designed as a lightly doped region is that in order to form a schottky contact at the interface of the P-type doped region 102 and the photosensitive layer 103, an excessively high doping concentration forms an ohmic contact at the interface, and the interface has bidirectional conduction if no potential barrier exists, and thus does not have unidirectional conduction characteristics of a pn junction. Therefore, in order to ensure that the P-type doped region 102 forms a schottky contact with the photosensitive layer 103 at the interface, the P-type doped region 102 cannot have an excessively high doping concentration, which is advantageous for the P-type doped region 102 in this embodimentThe doping concentration is selected to be 1e16/cm 3 。
As an example, the N + type doped region 104 has an ion doping concentration of 1e18-1e20/cm 3 In this embodiment, the doping concentration is preferably 1e19/cm 3 。
Example two
The present embodiment provides a method for testing the on-chip loss of the polarization beam splitter 2000 by using the above-mentioned 8-channel structure on the basis of the first embodiment. As shown in fig. 10, the method specifically includes the following steps:
t1, when the measured light directly enters the photoelectric detector by the grating without passing through the polarization beam splitter 2000, the photocurrent I of the photoelectric detector 1 Input optical power E 1 Grating coupling loss C 1 Further, obtaining the responsivity R of the photoelectric detector by using a formula (a);
the responsivity R is a ratio of output photocurrent to input optical power of the photodetector, and represents photoelectric conversion efficiency of the photodetector, and specifically, the responsivity R of the photodetector measured in this embodiment is 0.75A/W.
T2, when the measured light enters the photoelectric detector through the polarization beam splitter 2000 and the grating coupling, the photocurrent I of the photoelectric detector 2 Input optical power E 2 Grating coupling loss C 2 Further, the on-chip loss W of the polarization beam splitter 2000 is obtained by using the formula (a);
the calculation principle of the above formula (a) is: the numerical relationship is established by the results of the two tests (i.e., whether the polarization beam splitter is added or not) through the responsivity R, and the on-chip loss W of the polarization beam splitter 2000 is calculated.
Specifically, in the present embodiment, the on-chip loss W of the polarization beam splitter 2000 is 1.19dB as measured by the method for testing the on-chip loss described above, which indicates that the 8-channel structure has a lower loss.
The embodiment also provides a method for testing the polarization isolation degree of the optical fiber by using the 8-channel structure. The greater the isolation degree is, the better the effect of converting the TM0 mode into the TE0 mode is, and the more the TE0 and the TM0 are distinguished, so that the greater the isolation degree is, and the greater the isolation degree is, the distortion of transmission signals caused by mutual crosstalk between signals can be effectively prevented. As shown in fig. 10, the method for testing polarization isolation specifically includes the following steps:
d1, measuring the responsivity R of the photoelectric detector;
specifically, the responsivity R, i.e. the ratio of the output photocurrent of the photodetector to the input optical power, represents the photoelectric conversion efficiency of the photodetector, and specifically, in this embodiment, the responsivity R of the photodetector is measured to be 0.75A/W.
And D2, measuring the polarization isolation degree in the TE mode. Specifically, light in TE0 mode is incident to the single-mode input waveguide 201, and photocurrents a of the first photodetector 1001 and the second photodetector 1002 are measured respectively 1 And A 2 The responsivity R measured in the step D1 and the photocurrent A measured in the step are compared 1 And A 2 Substituting the formula (b) below to calculate P 1 、P 2 Wherein P is 1 、P 2 The values of (a) and (b) are optical powers input to the first photodetector 1001 and the second photodetector 1002, respectively, and finally the polarization isolation = P in the TE mode is calculated 1 -P 2 ；
D3, measuring the polarization isolation degree in the TM mode by adopting the steps similar to those in D2. Specifically, light in a TM0 mode is incident on the single-mode input waveguide 201, and photocurrents a of the first photodetector 1001 and the second photodetector 1002 are measured respectively 1 And A 2 The responsivity R measured in the step D1 and the photocurrent A measured in the step 1 And A 2 Substituting the formula (b) to obtain P 1 、P 2 Wherein P is 1 、P 2 Are respectively input toThe optical power of the first photodetector 1001 and the optical power of the second photodetector 1002 are finally calculated to obtain the polarization isolation = P in the TM mode 2 -P 1 ；
The calculation principle of the above formula (b) is: a numerical relation is established between the photocurrent and the optical power through the responsivity R, the optical power is obtained through the photocurrent, and then the polarization isolation degree is obtained.
It should be noted that, as described above, after the light in the TE0 mode enters the single-mode input waveguide 201, the TE0 mode is output from one branch of the Y-branch waveguide 203 and then reaches the first photodetector 1001 through the mode conversion of the polarization beam splitter 2000; after the TM0 mode is incident on the single-mode input waveguide 201, the TM0 mode is converted into the TE0 mode by the mode conversion of the polarization beam splitter 2000, and the TE0 mode is output from the other branch of the Y-branch waveguide 203 and then reaches the second photodetector 1002. Thus, in TE mode, the resulting P is tested 1 Greater than P 2 (ii) a And in TM mode, the obtained P is tested 1 Less than P 2 ；
Specifically, in this embodiment, the polarization isolation of the 8-channel structure in the TE mode and the TM mode is 14.59dB and 5.141dB, respectively, through testing and calculation by using the method for testing polarization isolation. Therefore, the 8-channel structure has better polarization isolation, and the measurement accuracy of the photoelectric detector is improved.
In the method for testing the polarization isolation degree of the 8-channel structure provided by the embodiment, the polarization isolation degree of the system is obtained through the photocurrent of the photodetector. Originally, the polarization isolation degree is obtained by testing the received optical power of the first photoelectric detector and the second photoelectric detector, and after the method is adopted, the polarization isolation degree can be directly obtained by testing the optical currents of the first photoelectric detector and the second photoelectric detector, so that the testing process and the used instruments are simplified, meanwhile, the errors such as loss and the like caused by testing the optical power are avoided, and the testing result of the polarization isolation degree is more accurate.
In conclusion, the invention effectively combines the photoelectric detector and the polarization beam splitter to form an 8-channel structure, thereby reducing the polarization sensitivity of the system and simultaneously keeping lower loss. The design of 8 channels effectively improves the bandwidth of the system and meets the requirement of mass data transmission. The invention also improves the structure of the photoelectric detector, designs the photosensitive layer of the photoelectric detector into a circular truncated cone shape, balances the two influencing factors of current transmission and current expansion by the circular truncated cone-shaped photosensitive layer, and ensures that a photon-generated carrier is diffused in a very short time so as to quickly conduct the circuit. In addition, the invention also provides a method for testing the polarization isolation degree of the 8-channel structure, the polarization isolation degree of the system is obtained through the photocurrent value of the photoelectric detector, the testing process is simplified, and errors such as loss and the like caused when the optical power is tested are avoided.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An 8-channel structure based on a polarization beam splitter and a photodetector, wherein the 8-channel structure at least comprises:
the device comprises an SOI (silicon on insulator) substrate, a photoelectric detector and a polarization beam splitter region, wherein the SOI substrate comprises a silicon substrate, a dielectric layer and top silicon which are sequentially stacked;
the polarization beam splitter region comprises 8 waveguides which are arranged at intervals and obtained by imaging the top silicon, the waveguides comprise a single-mode input waveguide, a double-etched waveguide and a Y-branch waveguide which are connected in sequence, and the Y-branch waveguide comprises a first branch waveguide and a second branch waveguide;
the photoelectric detector area comprises 16 photoelectric tubes, and the 16 photoelectric tubes comprise 8 first photoelectric tubes corresponding to the first branch waveguides and 8 second photoelectric tubes corresponding to the second branch waveguides;
a silica cladding covering the polarizing beam splitter region and the photodetector region to form the 8-channel structure.
2. The 8-channel structure of claim 1, wherein the photo-transistor comprises a silicon layer, a photosensitive layer, an N + type doped region and a metal plug; wherein,
the silicon layer comprises a P-type doped region, 2P + type doped regions and an undoped silicon layer, wherein the 2P + type doped regions are in contact with the dielectric layer and positioned on two sides of the P-type doped region, the photosensitive layer is positioned on the P-type doped region, the undoped silicon layer is positioned on the upper part of the P-type doped region and positioned on two sides of the photosensitive layer, the N + type doped region is formed on the top of the photosensitive layer, and the P-type doped region is connected with the Y-branch waveguide;
the metal plug comprises a first metal plug, a second metal plug and a third metal plug, the metal plugs are exposed out of the silicon dioxide cladding layer, the first metal plug is electrically connected with the N + type doped region, and the second metal plug and the third metal plug are respectively electrically connected with 2P + type doped regions.
3. The 8-channel structure of claim 2, wherein the photosensitive layer comprises a metal Ge layer, and the photosensitive layer is cylindrical or truncated.
4. The 8-channel structure of claim 2, wherein the P + type doped region has an ion doping concentration of 1e18-1e20/cm 3 The ion doping concentration of the P-type doping region is 1e14-1e18/cm 3 The ion doping concentration of the N + type doping area is 1e18-1e20/cm 3 。
5. The 8-channel structure of claim 1, wherein the 8-channel structure has a width of 300 μm to 400 μm and 8 of the single-mode input waveguides are separated by a distance of 180 μm to 200 μm.
6. A manufacturing method of an 8-channel structure based on a polarization beam splitter and a photoelectric detector is characterized by comprising the following steps:
providing an SOI substrate, wherein the SOI substrate comprises a silicon substrate, a dielectric layer and top silicon which are sequentially overlapped, and the SOI substrate comprises a polarization beam splitter region and a photoelectric detector region;
patterning the top silicon layer, and forming 8 waveguides arranged at intervals in the polarization beam splitter region, wherein the waveguides comprise a single-mode input waveguide, a double-etched waveguide and a Y-branch waveguide which are sequentially connected, and the Y-branch waveguide comprises a first branch waveguide and a second branch waveguide;
forming 16 photoelectric tubes in the photoelectric detector area, wherein the 16 photoelectric tubes comprise 8 first photoelectric tubes arranged corresponding to the first branch waveguides and 8 second photoelectric tubes arranged corresponding to the second branch waveguides;
forming a silica cladding covering the polarizing beam splitter region and the photodetector region.
7. The method of manufacturing of claim 6, wherein the method of manufacturing the photocell comprises the steps of:
patterning the top silicon layer in the photodetector region and forming a silicon layer by an ion implantation process, the silicon layer comprising: the semiconductor device comprises a P-type doped region, 2P + type doped regions and an undoped silicon layer, wherein the 2P + type doped regions are in contact with the dielectric layer and are positioned on two sides of the P-type doped region, the undoped silicon layer is positioned on the upper surface of the P-type doped region, and the P-type doped region is connected with the Y-branch waveguide;
patterning the undoped silicon layer and depositing a photosensitive layer, wherein the photosensitive layer is connected with the P-type doped region;
forming an N + type doped region on the top of the photosensitive layer by ion implantation;
and forming a metal plug in the photoelectric detector region, wherein the metal plug is exposed out of the silicon dioxide cladding layer and comprises a first metal plug electrically connected with the photosensitive layer and a second metal plug and a third metal plug which are respectively electrically connected with the 2P + type doped regions.
8. The method of claim 7, wherein the photosensitive layer comprises a Ge metal layer, and the photosensitive layer has a cylindrical or truncated cone shape.
9. The method according to claim 7, wherein the P + type doped region has an ion doping concentration of 1e18-1e20/cm 3 The ion doping concentration of the P-type doping region is 1e14-1e18/cm 3 The ion doping concentration of the N + type doping area is 1e18-1e20/cm 3 。
10. The method according to claim 6, wherein the 8-channel structure has a width of 300 μm to 400 μm, and the single-mode input waveguides among the 8 waveguides arranged at intervals have a spacing distance of 180 μm to 200 μm.
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