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CN115173226A - Vertical cavity surface emitting laser epitaxial structure and manufacturing method thereof - Google Patents

Vertical cavity surface emitting laser epitaxial structure and manufacturing method thereof Download PDF

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Publication number
CN115173226A
CN115173226A CN202210891568.1A CN202210891568A CN115173226A CN 115173226 A CN115173226 A CN 115173226A CN 202210891568 A CN202210891568 A CN 202210891568A CN 115173226 A CN115173226 A CN 115173226A
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layer
type dbr
strain
strained
ohmic contact
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关伟民
李远哲
张希山
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Semiconductor Manufacturing Electronics Shaoxing Corp SMEC
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Semiconductor Manufacturing Electronics Shaoxing Corp SMEC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a vertical cavity surface emitting laser epitaxial structure and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a substrate, and sequentially forming a first buffer layer, an etching stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer and a P-type DBR layer on the substrate; the material of the corrosion stop layer comprises silicon-doped (Al) x Ga (1‑x) ) y In z As n P m . The corrosion stop layer can realize rapid corrosion, and the corrosion stop layer and the substrate have high corrosion selection ratio, so that the phenomenon of uneven corrosion can be improved, the residue of the substrate is improved, and the quality and the performance of a device are improved.

Description

Vertical cavity surface emitting laser epitaxial structure and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor photoelectricity, in particular to a vertical cavity surface emitting laser epitaxial structure and a manufacturing method thereof.
Background
Lasers are devices that use the principle of stimulated radiation to cause amplified or oscillating emission of light in certain excited species. A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor Laser, and the Laser Emitting direction of the VCSEL is perpendicular to the epitaxial plane, and compared with an edge-Emitting Laser in which general Laser is emitted from the edge (the Emitting direction is parallel to the epitaxial direction), the VCSEL has the advantages of small far-field divergence angle, easy fiber coupling, small threshold current, high bandwidth, high test efficiency, and the like.
The vertical cavity surface emitting laser epitaxial structure generally includes a gallium arsenide (GaAs) substrate, a GaAs buffer layer, a corrosion stop layer, an N-type DBR (Distributed Bragg reflector) layer, an oxide layer, an active layer, and a P-type DBR layer. In general, the N-type DBR layer includes 40 pairs (pair) of growth pairs, the P-type DBR layer includes 20 pairs of growth pairs, the substrate is thinned to about 100 μm, and laser light is emitted from the P-type DBR layer side.
However, the existing epitaxial structure leads to the following disadvantages: the DBR layer growth process is complex; the single corrosion stop layer is not uniform in corrosion, and the voltage is inconsistent; the stress of the epitaxial material is uneven, so that the epitaxial material is broken; due to the non-uniformity of the epitaxial material, the ohmic contact layer is over-corroded, and small black holes appear in the epitaxial layer.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser epitaxial structure and a manufacturing method thereof, which can improve the phenomenon of uneven corrosion and improve the residue of a substrate, thereby improving the performance of a device.
In order to solve the above technical problem, the present invention provides a method for manufacturing an epitaxial structure of a vertical cavity surface emitting laser, comprising the following steps:
providing a substrate, and sequentially forming a first buffer layer, a corrosion stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer and a P-type DBR layer on the substrate;
the material of the corrosion stop layer comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1, and n < m.
Optionally, a first strained layer and a second strained layer are further formed between the ohmic contact layer and the second buffer layer, and both the first strained layer and the second strained layer comprise (Al) x Ga (1-x) ) y In z As n P m Si a O b C c Wherein, 0<x<1，0<y<1，0<z<1，0<n<1，0<m<1，0<a<1，0<b<1，0<c<1, and y + z =1, n + m =1, a + b + c =1, a>c>And b, the contents of P and As in the first strain layer and the second strain layer are different.
Optionally, in the first strained layer and the second strained layer, m1 is greater than m2, and n1 is less than n2, where m1 and n1 are the content of P and the content of As in the first strained layer, and m2 and n2 are the content of P and the content of As in the second strained layer, respectively.
Optionally, the material of the ohmic contact layer includes silicon-doped gallium arsenide, the material of the second buffer layer includes silicon-doped gallium arsenide, and the content of the doped silicon in the ohmic contact layer is different from that in the second buffer layer.
Optionally, an oxide layer is further formed between the N-type DBR layer and the active layer; and a P-type gallium arsenide layer is also formed on the P-type DBR layer.
Optionally, the number of growth pairs of the N-type DBR layer includes 15 to 25 pairs, the number of growth pairs of the P-type DBR layer includes 30 to 40 pairs, and the N-type DBR layer and the P-type DBR layer use uniform doping.
Optionally, forming the corrosion cut-off layer by an organic metal chemical vapor deposition method, wherein the pressure of a chamber is 50mbar-500mbar, and the temperature of the chamber is 400 ℃ -800 ℃; the thickness of the corrosion cut-off layer is 10nm-200nm; or the like, or a combination thereof,
forming the ohmic contact layer by adopting an organic metal chemical vapor deposition method, wherein the pressure of a chamber is 50mbar-500mbar, and the temperature of the chamber is 400 ℃ -800 ℃; the thickness of the ohmic contact layer is 10nm-200nm.
Optionally, forming the first strain layer by an organic metal chemical vapor deposition method, wherein the pressure of a chamber is 50mbar-500mbar, and the temperature of the chamber is 400 ℃ -800 ℃; the thickness of the first strain layer is 10nm-200nm; or the like, or a combination thereof,
forming the second strain layer by adopting an organic metal chemical vapor deposition method, wherein the pressure of a chamber is 50mbar-500mbar, and the growth temperature is 400 ℃ -800 ℃; the thickness of the second strain layer is 10nm-200nm.
Correspondingly, the invention also provides a vertical cavity surface emitting laser epitaxial structure, which comprises:
the semiconductor device comprises a substrate, a first buffer layer, a corrosion stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer and a P-type DBR layer, wherein the first buffer layer, the corrosion stop layer, the ohmic contact layer, the second buffer layer, the N-type DBR layer, the active layer and the P-type DBR layer are sequentially arranged on the substrate;
the material of the corrosion stop layer comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1, and n < m.
Optionally, a first strained layer and a second strained layer are further formed between the ohmic contact layer and the second buffer layer, and both the first strained layer and the second strained layer comprise (Al) x Ga (1-x) ) y In z As n P m Si a O b C c Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1，0<a<1，0<b<1，0<c<1, and y + z =1, n + m =1, a + b + c =1, a +>c>And b, the contents of P and As in the first strain layer and the second strain layer are different.
In the epitaxial structure of the vertical cavity surface emitting laser and the manufacturing method thereof, a corrosion stop layer, an ohmic contact layer and a second buffer layer are sequentially formed between a first buffer layer and an N-type DBR layer, and the material of the corrosion stop layer comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m The rapid corrosion can be realized, and the corrosion stop layer and the substrate have high corrosion selection ratio, so that the phenomenon of nonuniform corrosion can be improved, the residue of the substrate is improved, and the quality and the performance of a device are improved.
Furthermore, a first strained layer and a second strained layer are formed between the ohmic contact layer and the second buffer layer, and the first strained layer and the second strained layer are made of (Al) x Ga (1-x) ) y In z As n P m Si a O b C c The first strain layer can realize the balance of compressive strain generated by a quantum well, and the second strain layer can realize the release of stress; and the contents of P and As in the first strain layer and the second strain layer are different, and the release of stress can be further realized by the change of the contents, so that the epitaxial structure is more uniform. The following beneficial effects can be achieved: the growth complexity of the N-type DBR layer and the P-type DBR layer is reduced; the current distribution is improved, and the beam quality is improved; the phenomenon of substrate tilting caused by stress imbalance is improved; the contact voltage is improved; improving small black holes of the epitaxial structure; finally, the quality and the performance of the device are further improved.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention.
Fig. 1 is a schematic structural diagram of an epitaxial structure of a vertical cavity surface emitting laser according to an embodiment of the invention.
Reference numerals are as follows:
10-a substrate; 11-a first buffer layer; 12-corrosion stop layer; 13-ohmic contact layer; 14-a first strained layer; 15-a second strained layer; 16-a second buffer layer; a 17-N type DBR layer; 18-an oxide layer; 19-an active layer; a 20-P type DBR layer; a 21-P type gallium arsenide layer.
Detailed Description
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are intended to be part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As used in this disclosure, the singular forms "a," "an," and "the" include plural referents, the term "or" is generally employed in a sense including "and/or," the terms "a," "an," and "the" are generally employed in a sense including "at least one," the terms "at least two" are generally employed in a sense including "two or more," and further, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to imply that the number of indicated technical features is essential. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or at least two of the feature unless the content clearly dictates otherwise.
Fig. 1 is a schematic structural diagram of an epitaxial structure of a vertical cavity surface emitting laser according to an embodiment of the invention. As shown in fig. 1, the method for fabricating the vertical cavity surface emitting laser epitaxial structure includes the following steps:
providing a substrate 10, and sequentially forming a first buffer layer 11, an etch stop layer 12, an ohmic contact layer 13, a second buffer layer 16, an N-type DBR layer 17, an active layer 19 and a P-type DBR layer 20 on the substrate;
the material of the corrosion stop layer 12 comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1, and n < m.
The corrosion stop layer 12 can realize rapid corrosion, and the corrosion stop layer 12 and the substrate 10 have a high corrosion selection ratio, so that the phenomenon of uneven corrosion can be improved, the residue of the substrate 10 can be improved, and the quality and the performance of a device can be improved.
In this embodiment, the material of the substrate 10 is preferably gallium arsenide (GaAs), which is N-type doped and the doping atoms include silicon. The material of the first buffer layer 11 is also preferably gallium arsenide, which is consistent with the material of the substrate 10. The material of the ohmic contact layer 13 includes silicon-doped gallium arsenide, the material of the second buffer layer 16 also includes silicon-doped gallium arsenide, and the contents of the doped silicon in the ohmic contact layer 13 and the second buffer layer 16 are different. In another embodiment, the contents of the doped silicon in the ohmic contact layer 13 and the second buffer layer 16 may be the same, which is not limited in the present invention.
Preferably, an oxide layer 18 is further formed between the N-type DBR layer 17 and the active layer 19, and a P-type gallium arsenide layer 21 is further formed on the P-type DBR layer 20. The oxide layer 18 may include a semiconductor compound containing aluminum, such as AlAs (aluminum arsenide), alGaAs (aluminum gallium arsenide), inalgas (indium aluminum gallium arsenide), or the like, which is oxidized to form the oxide layer 18. The oxide layer 18 may be provided with a light transmitting region which is not oxidized at a central position. The resistance of the oxide layer 18 may be relatively high, but conversely, the refractive index of the oxide layer 18 is relatively low. Therefore, current can be injected into the light-transmitting region, so that the laser light is focused at the center of the element.
The lattice mismatch of P (phosphorus) and As (arsenic) in the etch stop layer 12 can lead to non-uniform stress in the epitaxial structure. In this embodiment, a first strained layer 14 and a second strained layer 15 are preferably further formed between the ohmic contact layer 13 and the second buffer layer 16 to release stress. The first strained layer 14 and the second strained layer 15 are made of (Al) x Ga (1-x) ) y In z As n P m Si a O b C c Wherein, 0<x<1，0<y<1，0<z<1，0<n<1，0<m<1，0<a<1，0<b<1，0<c<1, and y + z =1, n + m =1, a + b + c =1, a +>c>And b, the contents of P and As in the first strain layer and the second strain layer are different.
The first strained layer 14 can realize the balance of compressive strain generated by quantum wells, and the second strained layer 15 can realize the release of stress; and the contents of P and As in the first strained layer 14 and the second strained layer 15 are different, and the release of stress can be further realized by the change of the contents, so that the epitaxial structure is more uniform. The following beneficial effects can be achieved: the growth complexity of the N-type DBR layer 17 and the P-type DBR layer 20 is reduced; the current distribution is improved, and the beam quality is improved; improving the phenomenon of the substrate 10 tilting due to the stress imbalance; improving the contact voltage; improving small black holes of the epitaxial structure; and finally, the quality and the performance of the device are improved.
Illustratively, the etch stop layer 12, the ohmic contact layer 13, the first strained layer 14, and the second strained layer 15 may be formed by Metal-organic Chemical Vapor Deposition (MOCVD). Of course, other methods known to those skilled in the art may also be used. When the corrosion cut-off layer 12 is formed, the pressure of a chamber is 50mbar-500mbar, the temperature of the chamber is 400 ℃ -800 ℃, and the thickness of the corrosion cut-off layer 12 is 10nm-200nm. The corrosion stop layer 12 can realize rapid corrosion, and can reduce the residue of the substrate 10 to achieve an optimal corrosion effect. When the ohmic contact layer 13 is formed, the pressure of a chamber is 50mbar-500mbar, the temperature of the chamber is 400 ℃ -800 ℃, and the thickness of the ohmic contact layer 13 is 10nm-200nm.
When the first strain layer 14 is formed, the pressure of a chamber is 50mbar-500mbar, the growth temperature is 400 ℃ -800 ℃, and the thickness of the first strain layer 14 is 10nm-200nm. The first strained layer 14 enables a balance of compressive strain due to the quantum well, resulting in a more uniform epitaxial structure. When the second strain layer 15 is formed, the pressure of a chamber is 50mbar-500mbar, the growth temperature is 400 ℃ -800 ℃, and the thickness of the second strain layer 15 is 10nm-200nm. The second strained layer 15 enables stress release, making the epitaxial structure more uniform. And the contents of P and As in the first strain layer and the second strain layer are different, and the release of stress can be further realized by the change of the contents, so that the epitaxial structure is more uniform.
Preferably, in the first strained layer 14 and the second strained layer 15, m1 is greater than m2, and n1 is less than n2, where m1 and n1 are the content of P (phosphorus) and the content of As (arsenic) in the first strained layer 14, and m2 and n2 are the content of P and the content of As in the second strained layer 15, respectively. The content of the first strained layer 14 and the second strained layer 15 is changed, so that the stress can be further released, and the epitaxial structure is more uniform.
Illustratively, the number of grown pairs of the N-type DBR layer 17 comprises 15 to 25 pairs, which is reduced compared to 40 pairs of the prior art. The N-type DBR layer 17 is formed by stacking at least two semiconductor materials having different refractive indexes, for example: the N-type DBR layer 17 is an overlapped structure of a first refractive index and a second refractive index, the first refractive index is larger than the second refractive index, and 15-25 pairs of materials with the two refractive indexes are formed. In an embodiment of the present invention, the N-type DBR layer 17 may include an N-type aluminum gallium arsenide layer (AlGaAs) and an N-type gallium arsenide layer (GaAs) stacked in sequence. The N-type DBR layer 17 is formed by stacking a plurality of high-refractive-index N-type aluminum gallium arsenide layers and low-refractive-index N-type gallium arsenide layers. Furthermore, based on the conventional structure of the DBR, the refractive index of the N-type algan layer may be gradually changed, and the refractive index of the N-type gaas layer may also be gradually changed, but is not limited thereto.
The growth logarithm of the P-type DBR layer 20 comprises 30-40 pairs, and the logarithm is increased compared with the 20 pairs in the prior art. Similar to the N-type DBR layer 17, the P-type DBR layer 20 is formed by stacking at least two semiconductor materials having different refractive indexes, for example: the P-type DBR layer 20 is an overlapping structure of a first refractive index and a second refractive index, the first refractive index is greater than the second refractive index, and the two refractive index materials form 30-40 pairs. In an embodiment of the present invention, the P-type DBR layer 20 may include a P-type aluminum gallium arsenide layer (AlGaAs) and a P-type gallium arsenide layer (GaAs) sequentially disposed. The P-type DBR layer 20 is formed by stacking a plurality of P-type aluminum gallium arsenide layers with high refractive index and P-type gallium arsenide layers with low refractive index. Furthermore, based on the conventional structure of the DBR, the refractive index of the P-type aluminum gallium arsenide layer may be gradually changed, and the refractive index of the P-type gallium arsenide layer may also be gradually changed, but is not limited thereto. Preferably, the N-type DBR layer 17 and the P-type DBR layer 20 use uniform doping.
In the embodiment of the present invention, an etch stop layer 12, an ohmic contact layer 13, and a second buffer layer 16 are sequentially formed between the first buffer layer 11 and the N-type DBR layer 17, wherein a material of the etch stop layer 12 includes silicon-doped (Al) x Ga (1-x) ) y In z As n P m The rapid corrosion can be realized, and the corrosion stop layer 12 and the substrate 10 have high corrosion selectivity, thereby improving the phenomenon of non-uniform corrosion, improving the residue of the substrate 10, and improving the quality and performance of the device,
a first strained layer 14 and a second strained layer 15 are further formed between the ohmic contact layer 13 and the second buffer layer 16, and both the first strained layer 14 and the second strained layer 15 are made of (Al) x Ga (1-x) ) y In z As n P m Si a O b C c The first strained layer 14 can realize the balance of compressive strain generated by quantum wells, and the second strained layer 15 can realize the release of stress; and the contents of P and As in the first strained layer 14 and the second strained layer 15 are different, and the release of stress can be further realized by the change of the contents, so that the epitaxial structure is more uniform. Thereby can reach following beneficial effect: the complexity of growth of the N-type DBR layer and the P-type DBR layer is reduced; the current distribution is improved, and the beam quality is improved; the phenomenon of substrate tilting caused by stress imbalance is improved; improving the contact voltage; improving small black holes of the epitaxial structure; finally, the quality and the performance of the device are improved.
Correspondingly, the invention also provides a vertical cavity surface emitting laser epitaxial structure which is manufactured by adopting the manufacturing method of the vertical cavity surface emitting laser epitaxial structure. Referring to fig. 1, the vertical cavity surface emitting laser epitaxial structure includes:
the semiconductor device comprises a substrate 10, a first buffer layer 11, an etch stop layer 12, an ohmic contact layer 13, a second buffer layer 16, an N-type DBR layer 17, an active layer 19 and a P-type DBR layer 20, wherein the first buffer layer, the etch stop layer 12, the ohmic contact layer, the second buffer layer, the N-type DBR layer 17, the active layer 19 and the P-type DBR layer 20 are sequentially arranged on the substrate;
the material of the corrosion stop layer 12 comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1, and n < m.
Preferably, a first strained layer 14 and a second strained layer 16 are further formed between the ohmic contact layer 13 and the second buffer layer 16The material of the strained layer 15, the first strained layer 14 and the second strained layer 15 both comprise (Al) x Ga (1-x) ) y In z As n P m Si a O b C c Wherein, 0<x<1，0<y<1，0<z<1，0<n<1，0<m<1，0<a<1，0<b<1，0<c<1, and y + z =1, n + m =1, a + b + c =1, a +>c>And b, the contents of P and As in the first strain layer and the second strain layer are different.
Preferably, in the first strained layer 14 and the second strained layer 15, m1 is greater than m2, and n1 is less than n2, where m1 and n1 are the content of P and the content of As in the first strained layer 14, respectively, and m2 and n2 are the content of P and the content of As in the second strained layer 15, respectively.
Preferably, the material of the ohmic contact layer 13 includes silicon-doped gallium arsenide, the material 16 of the second buffer layer includes silicon-doped gallium arsenide, and the contents of the doped silicon in the ohmic contact layer 13 and the second buffer layer 16 are different.
Preferably, an oxide layer 18 is further formed between the N-type DBR layer 17 and the active layer 19; a P-type gallium arsenide layer 21 is also formed on the P-type DBR layer 20.
Preferably, the number of growth pairs of the N-type DBR layer includes 15 to 25 pairs, and the number of growth pairs of the P-type DBR layer includes 30 to 40 pairs. The N-type DBR layer 17 may include an N-type aluminum gallium arsenide layer (AlGaAs) and an N-type gallium arsenide layer, which are sequentially stacked. The P-type DBR layer 20 may include, but is not limited to, a P-type aluminum gallium arsenide layer (AlGaAs) and a P-type gallium arsenide layer, which are sequentially stacked.
In summary, in the vertical cavity surface emitting laser epitaxial structure and the method for fabricating the same according to the present invention, the etch stop layer, the ohmic contact layer and the second buffer layer are sequentially formed between the first buffer layer and the N-type DBR layer, and the material of the etch stop layer includes silicon-doped (Al) x Ga (1-x) ) y In z As n P m The rapid corrosion can be realized, and the corrosion stop layer and the substrate have high corrosion selection ratio, so that the phenomenon of non-uniform corrosion can be improved, the residue of the substrate can be improved, and the corrosion of the substrate can be preventedThe quality and the performance of the device are high.
Further, a first strained layer and a second strained layer are formed between the ohmic contact layer and the second buffer layer, and both the first strained layer and the second strained layer comprise (Al) x Ga (1-x) ) y In z As n P m Si a O b C c The first strain layer can realize the balance of compressive strain generated by a quantum well, and the second strain layer can realize the release of stress; and the contents of P and As in the first strain layer and the second strain layer are different, and the release of stress can be further realized by the change of the contents, so that the epitaxial structure is more uniform. The following beneficial effects can be achieved: the growth complexity of the N-type DBR layer and the P-type DBR layer is reduced; current distribution is improved, and beam quality is improved; the phenomenon of substrate tilting caused by stress imbalance is improved; improving the contact voltage; improve the small black hole of the epitaxial structure.
The above description is only for the purpose of describing the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are intended to fall within the scope of the appended claims.

Claims (10)

1. A method for manufacturing a vertical cavity surface emitting laser epitaxial structure is characterized by comprising the following steps:
providing a substrate, and sequentially forming a first buffer layer, a corrosion stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer and a P-type DBR layer on the substrate;
the material of the corrosion stop layer comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1, and n < m.
2. A method of fabricating a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein the ohmic contact layer and the epitaxial layer are formed on the substrateA first strain layer and a second strain layer are formed between the second buffer layers, and the first strain layer and the second strain layer are made of (Al) x Ga (1-x) ) y In z As n P m Si a O b C c Wherein, 0<x<1，0<y<1，0<z<1，0<n<1，0<m<1，0<a<1，0<b<1，0<c<1, and y + z =1, n + m =1, a + b + c =1, a +>c>And b, the contents of P and As in the first strain layer and the second strain layer are different.
3. A method according to claim 2, wherein m1 > m2 and n1 < n2 in said first and second strained layers, wherein m1 and n1 are the P content and the As content in said first strained layer, and m2 and n2 are the P content and the As content in said second strained layer, respectively.
4. A method according to claim 1, wherein the ohmic contact layer comprises silicon-doped gallium arsenide, the second buffer layer comprises silicon-doped gallium arsenide, and the ohmic contact layer and the second buffer layer have different doped silicon contents.
5. A method of fabricating a vertical cavity surface emitting laser epitaxial structure according to claim 1, wherein an oxide layer is further formed between the N-type DBR layer and the active layer; and a P-type gallium arsenide layer is also formed on the P-type DBR layer.
6. A method according to claim 1, wherein the number of growth pairs of the N-type DBR layer comprises 15-25 pairs, the number of growth pairs of the P-type DBR layer comprises 30-40 pairs, and the N-type DBR layer and the P-type DBR layer are uniformly doped.
7. The method of claim 1, wherein the etch stop layer is formed by organometallic chemical vapor deposition, at a chamber pressure of 50mbar to 500mbar and at a chamber temperature of 400 ℃ to 800 ℃; the thickness of the corrosion cut-off layer is 10nm-200nm; or the like, or, alternatively,
forming the ohmic contact layer by adopting an organic metal chemical vapor deposition method, wherein the pressure of a chamber is 50mbar-500mbar, and the temperature of the chamber is 400 ℃ -800 ℃; the thickness of the ohmic contact layer is 10nm-200nm.
8. The method of claim 2, wherein the first strained layer is formed by organometallic chemical vapor deposition, at a chamber pressure of 50mbar to 500mbar and at a chamber temperature of 400 ℃ to 800 ℃; the thickness of the first strain layer is 10nm-200nm; or the like, or a combination thereof,
forming the second strain layer by adopting an organic metal chemical vapor deposition method, wherein the pressure of a chamber is 50mbar-500mbar, and the growth temperature is 400 ℃ -800 ℃; the thickness of the second strain layer is 10nm-200nm.
9. A vertical cavity surface emitting laser epitaxial structure, comprising:
the semiconductor device comprises a substrate, a first buffer layer, a corrosion stop layer, an ohmic contact layer, a second buffer layer, an N-type DBR layer, an active layer and a P-type DBR layer, wherein the first buffer layer, the corrosion stop layer, the ohmic contact layer, the second buffer layer, the N-type DBR layer, the active layer and the P-type DBR layer are sequentially arranged on the substrate;
the material of the corrosion stop layer comprises silicon-doped (Al) x Ga (1-x) ) y In z As n P m Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1, and n < m.
10. A vcsel epitaxial structure according to claim 9, wherein a first strained layer and a second strained layer are formed between the ohmic contact layer and the second buffer layer, and the first strained layer and the second strained layer are made of different materialsContaining (Al) x Ga (1-x) ) y In z As n P m Si a O b C c Wherein 0 is<x<1，0<y<1，0<z<1，0<n<1，0<m<1，0<a<1，0<b<1，0<c<1, and y + z =1, n + m =1, a + b + c =1, a +>c>And b, the contents of P and As in the first strain layer and the second strain layer are different.
CN202210891568.1A 2022-07-27 2022-07-27 Vertical cavity surface emitting laser epitaxial structure and manufacturing method thereof Pending CN115173226A (en)

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